Datasheet tgf2022-60 Datasheet

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Page 1

Product Datasheet

September 7, 2007

DC - 20 GHz Discrete power pHEMT TGF2022-60

Key Features and Performance

• Frequency Range: DC - 20 GHz

• > 38 dBm Nominal Psat

• 57% Maximum PAE

• 12 dB Nominal Power Gain

• Suitable for high reliability applications

• 6.0mm x 0.35um Power pHEMT

• Nominal Bias Vd = 8-12V, Idq = 448-752mA

(Under RF Drive, Id rises from 448mA to 1480mA)

• Chip Dimensions: 0.57 x 2.93 x 0.10 mm

Product Description

(0.022 x 0.115 x 0.004 in)

The TriQuint TGF2022-60 is a discrete

6.0 mm pHEMT which operates from DC-20 GHz. The TGF2022-60 is designed using TriQuint’s proven standard 0.35um power pHEMT production process.

The TGF2022-60 typically provides > 38 dBm of saturated output power with power gain of 12 dB. The The maximum power added efficiency is 57% which makes the TGF2022-60 appropriate for high efficiency applications.

The TGF2022-60 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.

The TGF2022-60 has a protective surface passivation layer providing environmental robustness.

Primary Applications

• Point-to-point Radio

• High-reliability space

• Military

• Base Stations

• Broadband Wireless Applications

Maximum Gain (dB)

0246810121416

MSG

MAG

Frequency (GHz)

Lead-free and RoHS compliant

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -

Page 2

Product Datasheet

September 7, 2007

TABLE I

TGF2022-60

MAXIMUM RATINGS

Symbol Parameter 1/

| IG | Gate Supply Current 70 mA

STG

1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall

not exceed PD.

Positive Supply Voltage 12.5 V 2/ Negative Supply Voltage Range -5V to 0V Positive Supply Current (Quiescent) 2820 mA 2/

Input Continuous Wave Power 33 dBm 2/ Power Dissipation See note 3 2/ 3/ Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature

Value Notes

150 °C 320 °C

-65 to 150 °C

3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:

PD(max) = (150 °C – TBASE °C) / 14.2 (°C/W)

4/ Junction operating temperature will directly affect the device median time to failure

(TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.

TABLE II

DC PROBE CHARACTERISTICS

= 25 °C, Nominal)

Symbol Parameter Minimum Typical Maximum Unit

Idss Saturated Drain Current - 1800 - mA

Gm Transconductance - 2250 - mS

VP Pinch-off Voltage -1.5 -1 -0.5 V

BGS

BGD

Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown

Breakdown Voltage

Gate-Source

Breakdown Voltage

Gate-Drain

-30 - -8 V

-30 - -14 V

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Page 3

Product Datasheet

September 7, 2007

TABLE III

RF CHARA CTERIZATION TABLE 1/

TGF2022-60

(TA = 25 °C, Nominal)

SYMBOL PARAMETER f = 10 GHz f = 18 GHz UNITS

Power Tuned:

Psat PAE Gain

Efficiency

Tuned:

Psat PAE Gain

Saturated Output Power

Power Added Efficiency

Power Gain

Load Reflection

coefficient

Saturated Output Power

Power Added Efficiency

Power Gain

Load Reflection

coefficient

Vd = 10V

Idq = 448 mA

38.8

51.6

12.3

0.898 ∠ 175.1

37.6

57.0

12.4

0.925 ∠171.5

Vd = 12V

Idq = 448 mA

39.4 50

12.1

0.891 ∠173.7

39.0

53.8

12.4

0.908 ∠171.2

Vd = 10V

Idq = 448 mA

37.6 42

7.8

0.93 ∠174.9

37.2

44.0

7.9

0.943 ∠174.5

Vd = 12V

Idq = 448 mA

38.1 38

7.6

0.942 ∠174.6

37.9

41.0

7.6

0.949 ∠174.4

dBm

1/ Values in this table are from measurements taken from a 0.75mm unit pHEMT cell at 10 and 18 GHz 2/

Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz

TABLE IV

THERMAL INFORMATION

Parameter Test Conditions TCH

(

Thermal Resistance

(channel to backside of carrier)

Vd = 12 V Idq = 448 mA Pdiss = 5.38 W

Note: Assumes eutectic attach using 1. 5 m il 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature.

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146

(°C/W)

(HRS)

14.2 1.4E+6

Page 4

Product Datasheet

Linear Model for 0.75 mm Unit pHEMT cell

September 7, 2007

TGF2022-60

Gate

Lg Rg

Rgs

Cgs

OUT

Rdg

Cdg

gmVi

Rds

Cds

Drain

Source

Gate

Source Source

Source

UPC = 0.75mm Unit pHEMT Cell

MODEL

PARAMETER

Rg 0.18 0.19 0.19 0.20 0.20 0.21

Rs 0.31 0.31 0.31 0.36 0.35 0.40

Vd = 8V

Id = 56mA

Vd = 8V

Id = 75mA

Vd = 8V

Id = 94mA

Vd = 10V

Id = 56mA

Vd = 10V

Id = 75mA

UPC

Unit pHEMT cell

Reference Plane

Vd = 12V

Id = 56mA

Drain

UNITS

Rd 0.41 0.43 0.44 0.41 0.42 0.40

gm 0.242 0.25 0.25 0.23 0.24 0.227 S

Cgs 1.86 2.019 2.12 2.04 2.15 2.13 pF

Ri 1.33 1.28 1.28 1.36 1.32 1.38

Cds 0.143 0.144 0.144 0.142 0.143 0.142 pF

Rds 195.83 199.07 206.30 224.73 225.77 244.05

Cgd 0.090 0.084 0.079 0.080 0.077 0.076 pF

Tau 5.94 6.24 6.55 6.82 6.99 7.37 pS

Lg 0.103 0.103 0.103 0.102 0.103 0.102

Ld 0.110 0.109 0.108 0.108 0.108 0.108

Rgs 3920 5200 7250 5940 5700 6180

Rgd 54900 61900 76900 64100 78100 77000

0.002 0.002 0.002 0.002 0.002 0.002 nH

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Page 5

Linear Model for 6mm pHEMT

L - via = 0.0135 nH (9x)

Product Datasheet

September 7, 2007

TGF2022-60

Gate Pads (8x)

8 9

7 10

6 11

5 12

4 13

UPC

Drain Pads (8x)

3 14

2 15

1 16

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UPC

Page 6

Product Datasheet

Unmatched S-parameters for 6 mm pHEMT

Bias Conditions: Vd = 12V, Idq = 448mA

Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg

0.5 -0.267 -160.66 20.810 96.96 -37.554 9.36 -3.758 -171.94 1 -0.248 -170.31 14.876 88.74 -37.477 3.63 -3.641 -174.40

1.5 -0.244 -173.59 11.346 83.87 -37.501 1.23 -3.583 -174.60 2 -0.241 -175.26 8.817 79.86 -37.554 -0.29 -3.522 -174.25

2.5 -0.238 -176.27 6.834 76.22 -37.626 -1.44 -3.451 -173.72 3 -0.236 -176.97 5.195 72.78 -37.716 -2.37 -3.370 -173.14

3.5 -0.233 -177.47 3.790 69.48 -37.821 -3.15 -3.280 -172.57 4 -0.230 -177.87 2.556 66.28 -37.941 -3.80 -3.183 -172.02

4.5 -0.227 -178.19 1.451 63.17 -38.074 -4.34 -3.079 -171.53 5 -0.223 -178.45 0.445 60.13 -38.220 -4.77 -2.972 -171.10

5.5 -0.220 -178.68 -0.479 57.17 -38.377 -5.09 -2.862 -170.73 6 -0.216 -178.88 -1.338 54.28 -38.545 -5.31 -2.751 -170.42

6.5 -0.212 -179.06 -2.142 51.45 -38.722 -5.43 -2.640 -170.17 7 -0.208 -179.23 -2.899 48.69 -38.906 -5.43 -2.530 -169.99

7.5 -0.204 -179.38 -3.615 46.00 -39.098 -5.32 -2.422 -169.85 8 -0.201 -179.52 -4.297 43.38 -39.294 -5.09 -2.316 -169.77

8.5 -0.197 -179.66 -4.947 40.82 -39.495 -4.74 -2.214 -169.73 9 -0.193 -179.79 -5.570 38.32 -39.699 -4.28 -2.114 -169.74

9.5 -0.189 -179.91 -6.168 35.88 -39.904 -3.70 -2.019 -169.78

10 -0.185 179.97 -6.744 33.50 -40.109 -2.99 -1.927 -169.85

10.5 -0.182 179.85 -7.299 31.19 -40.313 -2.16 -1.839 -169.95 11 -0.178 179.74 -7.835 28.93 -40.513 -1.22 -1.756 -170.08

11.5 -0.175 179.63 -8.354 26.73 -40.709 -0.15 -1.676 -170.23 12 -0.172 179.52 -8.857 24.58 -40.898 1.04 -1.600 -170.40

12.5 -0.169 179.41 -9.344 22.48 -41.079 2.34 -1.527 -170.58 13 -0.166 179.31 -9.818 20.44 -41.251 3.75 -1.459 -170.78

13.5 -0.163 179.21 -10.278 18.44 -41.412 5.26 -1.394 -170.98 14 -0.160 179.10 -10.726 16.49 -41.560 6.87 -1.332 -171.20

14.5 -0.157 179.00 -11.162 14.59 -41.694 8.58 -1.273 -171.43 15 -0.154 178.90 -11.586 12.73 -41.813 10.36 -1.218 -171.66

15.5 -0.152 178.81 -12.001 10.92 -41.916 12.21 -1.165 -171.90 16 -0.150 178.71 -12.405 9.15 -42.001 14.12 -1.115 -172.14

16.5 -0.147 178.61 -12.800 7.41 -42.068 16.07 -1.068 -172.38 17 -0.145 178.51 -13.186 5.71 -42.117 18.06 -1.023 -172.63

17.5 -0.143 178.42 -13.564 4.05 -42.148 20.07 -0.981 -172.88 18 -0.141 178.32 -13.934 2.43 -42.159 22.09 -0.940 -173.13

18.5 -0.139 178.23 -14.296 0.84 -42.153 24.11 -0.902 -173.38 19 -0.137 178.14 -14.650 -0.72 -42.129 26.11 -0.866 -173.63

19.5 -0.135 178.04 -14.998 -2.25 -42.088 28.09 -0.831 -173.87 20 -0.134 177.95 -15.340 -3.75 -42.031 30.03 -0.799 -174.12

20.5 -0.132 177.86 -15.675 -5.22 -41.959 31.93 -0.767 -174.37 21 -0.131 177.77 -16.004 -6.67 -41.874 33.78 -0.738 -174.61

21.5 -0.129 177.68 -16.328 -8.09 -41.776 35.57 -0.709 -174.86 22 -0.128 177.59 -16.647 -9.48 -41.666 37.30 -0.683 -175.10

22.5 -0.126 177.50 -16.961 -10.85 -41.547 38.97 -0.657 -175.34 23 -0.125 177.41 -17.270 -12.20 -41.418 40.57 -0.632 -175.58

23.5 -0.124 177.32 -17.575 -13.53 -41.282 42.11 -0.609 -175.81 24 -0.123 177.23 -17.875 -14.84 -41.139 43.58 -0.587 -176.05

24.5 -0.122 177.14 -18.172 -16.12 -40.991 44.98 -0.565 -176.28 25 -0.120 177.06 -18.466 -17.39 -40.838 46.32 -0.545 -176.51

25.5 -0.119 176.97 -18.756 -18.64 -40.681 47.59 -0.526 -176.74 26 -0.118 176.88 -19.043 -19.88 -40.521 48.80 -0.507 -176.96

September 7, 2007

TGF2022-60

Note: The s-parameters are calculated by connecting nodes 1-8 together, and nodes 9-16 together to form a 2-port network.

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Page 7

Mechanical Drawing

0.328 [0.013]

2.930 [0.115]

Product Datasheet

September 7, 2007

TGF2022-60

GATE

2.511 [0.099]

2.305 [0.091]

2.065 [0.081]

1.825 [0.072]

1.585 [0.062]

1.345 [0.053]

1.105 [0.044]

0.865 [0.034]

0.625 [0.025]

0.420 [0.017]

0.000 [0.000]

413

116

2.322 [0.091]

152

0.608 [0.024]

DRAIN

0.030 [0.001]

0.120 [0.005]

Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of b Chip size tolerance: +/- 0.051 (0.002)

GND IS BACKSIDE OF MMIC Bond pads #1-8: (Gate) 0.090 x 0.090 (0.004 x 0.004)

Bond pads #9-16: (Drain) 0.090 x 0.090 (0.004 x 0.004) Bond pad #17: (Vg*) 0.090 x 0.090 (0.004 x 0.004) Bond pad #18: (Vg*) 0.090 x 0.090 (0.004 x 0.004)

*Note: Bond pads #17 & 18 are alternate gate pads that can be used for paralleling FETs.

0.565 [0.022]

0.328 [0.013]

0.444 [0.017]

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test.

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Page 8

Assembly Process Notes

Reflow process assembly notes:

•

Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec

•

An alloy station or conveyor furnace with reducing atmosphere should be used.

• No fluxes should be utilized.

• Coefficient of thermal expansion matching is critical for long-term reliability.

• Devices must be stored in a dry nitrogen atmosphere.

Com ponent placement and adhesive attachment assem bly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Organic attachment can be used in low-power applications.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

•

Microwave or radiant curing should not be used because of differential heating.

•

Coefficient of thermal expansion matching is critical.

Product Datasheet

September 7, 2007

TGF2022-60

Interconnect process assembly notes:

•

Thermosonic ball bonding is the preferred interconnect technique.

•

Force, time, and ultrasonics are critical parameters.

• Aluminum wire should not be used.

• Devices with small pad sizes should be bonded with 0.0007-inch wire.

• Maximum stage temperature is 200 °C.

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