Datasheet tgf2022-24 Datasheet

Product Datasheet

August 22, 2007

DC - 20 GHz Discrete power pHEMT TGF2022-24

Key Features and Performance

•

Product Description

The TriQuint TGF2022-24 is a discrete

2.4 mm pHEMT which operates from
DC-20 GHz. The TGF2022-24 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.

Frequency Range: DC -

•

> 34 dBm Nominal Psat

•

58% Maximum PAE

•

42 dBm

•

13 dB Nominal Power Gain

•

Suitable for high reliability applications

•

2.4mm x 0.35μm Power pHEMT

•

Nominal Bias Vd = 8-12V, Idq

Nominal OIP3

(Under RF Drive, Id rises from 180mA to 600mA)

•

Chip Dimensions: 0.57 x 1.30 x 0.10 mm

(0.022 x 0.051 x 0.004 in)

Primary Applications

•

Point-to-point Radio

•

High-reliability space

•

Military

•

Base Stations

20 GHz

= 180-300mA

•

The TGF2022-24 typically provides

Broadband Wireless Applications

> 34 dBm of saturated output power with
power gain of 13 dB. The maximum
power added efficiency is 58% which
makes the TGF2022-24 appropriate for
high efficiency applications.

The TGF2022-24 is also ideally suited for
Point-to-point Radio, High-reliability
space, and Military applications.

The TGF2022-24 has a protective
surface passivation

layer providing

environmental robustness.

Lead-free and RoHS

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compliant

35

30

25

20

15

10

Maximum Gain (dB)

5

0

0246810121416

MSG

MAG

Frequency (GHz)

1

Product Datasheet

August 22, 2007

TABLE I

TGF2022-24

MAXIMUM RATINGS

Symbol Parameter 1/

+

V

-

V

+

I

| IG | Gate Supply Current 28 mA

P

IN

P

D

T

CH

T

M

T

STG

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall

not exceed PD.

Positive Supply Voltage 12.5 V 2/

Negative Supply Voltage Range -5V to 0V

Positive Supply Current 1120 mA 2/

Input Continuous Wave Power 29 dBm 2/

Power Dissipation See note 3 2/ 3/

Operating Channel Temperature

Mounting Temperature (30 Seconds)

Storage Temperature

Value Notes

150 °C

320 °C

-65 to 150 °C

4/

3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:

PD(max) = (150 °C – TBASE °C) / 34.5 (°C/W)

4/ Junction operating temperature will directly affect the device median time to failure

(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.

TABLE II

DC PROBE CHARACTERISTICS

(T

= 25 °C, Nominal)

A

Symbol Parameter Minimum Typical Maximum Unit

Idss Saturated Drain Current - 720 - mA

Gm Transconductance - 900 - mS

VP Pinch-off Voltage -1.5 -1 -05 V

V

BGS

V

BGD

Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown

Breakdown Voltage

Gate-Source

Breakdown Voltage

Gate-Drain

-30 - -8 V

-30 - -14 V

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2

Product Datasheet

August 22, 2007

TGF2022-24

TABLE III

RF CHARACTERIZATION TABLE 1/

(TA = 25 °C, Nominal)

SYMBOL PARAMETER f = 10 GHz f = 18 GHz UNITS

Power Tuned:

Psat

PAE

Gain

Γ

L

Efficiency

Tuned:

Psat

PAE

Gain

Γ

L

OIP3 Output TOI 43 42 43 42 dBm

2/

2/

Saturated Output Power

Power Added Efficiency

Power Gain

Load Reflection

coefficient

Saturated Output Power

Power Added Efficiency

Power Gain

Load Reflection

coefficient

Vd = 10V

Idq = 180 mA

34.9

52.4

12.9

0.757 ∠ 167.6

35.3

58.3

13

0.738 ∠159.3

Vd = 12V

Idq = 180 mA

35.6

51.9

12.9

0.737 ∠163.4

35.3

56.0

13

0.741 ∠158.8

Vd = 10V

Idq = 180 mA

34.1

41.5

8.3

0.831 ∠167.8

33.5

46.0

8.5

0.867 ∠166.6

Vd = 12V

Idq = 180 mA

34.7

37.0

8.0

0.842 ∠166.7

34.1

42.5

8.3

0.885 ∠165.6

dBm

%

dB

-

dBm

%

dB

-

1/

Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz

2/

Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz

TABLE IV

THERMAL INFORMATION

Parameter Test Conditions T

Thermal Resistance

θ

JC

(channel to backside of carrier)

Vd = 12 V
Idq = 180 mA

CH

(oC)

145

θ

JC

(°C/W)

34.5 1.6 E+6

Pdiss = 2.16 W

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.

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T

M

(HRS)

3

Product Datasheet

Linear Model for 0.6 mm Unit pHEMT cell

August 22, 2007

TGF2022-24

Gate

PARAMETER

Lg Rg

Rgs

Cgs

OUT

Rdg

Cdg

+

gmVi

V

i

R

i

-

L

s

R

s

Rds

Cds

Rd

Ld

L

Drain

Source

Gate

UPC

Source Source

Source

UPC = 0.6mm Unit pHEMT Cell

MODEL

Rg 0.22 0.23 0.24 0.23 0.24 0.24

Rs 0.40 0.41 0.41 0.46 0.45 0.50

Vd = 8V

Idq = 45mA

Vd = 8V

Idq = 60mA

Vd = 8V

Idq = 75mA

Vd = 10V

Idq = 45mA

Vd = 10V

Idq = 60mA

Idq = 45mA

Unit pHEMT cell

Reference Plane

Drain

Vd = 12V

UNITS

Ω

Ω

Rd 0.51 0.52 0.52 0.50 0.50 0.48

gm 0.195 0.202 0.202 0.188 0.195 0.183 S

Cgs 1.50 1.63 1.70 1.64 1.73 1.71 pF

Ri 1.65 1.59 1.58 1.72 1.64 1.73

Cds 0.115 0.115 0.116 0.114 0.115 0.114 pF

Rds 243.14 247.08 255.12 278.72 279.31 302.49

Cgd 0.072 0.066 0.063 0.064 0.061 0.060 pF

Tau 5.94 6.23 6.51 6.85 6.95 7.36 pS

Ls 0.001 0.001 0.001 0.001 0.001 0.001 nH

Lg 0.108 0.108 0.108 0.108 0.108 0.108

Ld 0.121 0.120 0.118 0.118 0.118 0.117

Rgs 5110 5140 8310 5110 5420 5120

Rgd 57700 64800 74400 79400 82900 82300

Ω

Ω

Ω

nH

nH

Ω

Ω

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4

Product Datasheet

TGF2022-24

Linear Model for 2.4mm pHEMT

L -

via = 0.0135 nH

UPC

Gate Pads (4x) Drain Pads (4x)

3 6

UPC

(5x)

54

August 22, 2007

2

UPC

1

UPC

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7

8

5

Product Datasheet

Unmatched S-parameters for 2.4 mm pHEMT

Bias Conditions: Vd = 12V, Idq = 180mA

Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang
(GHz) dB deg dB deg dB deg dB deg

0.5 -0.489 -123.26 25.697 115.91 -32.842 27.72 -9.738 -127.01
1 -0.456 -149.89 20.491 99.75 -32.030 13.51 -9.284 -147.73

1.5 -0.448 -159.80 17.125 92.03 -31.879 7.69 -9.068 -153.52
2 -0.444 -164.92 14.667 86.72 -31.845 4.30 -8.858 -155.29

2.5 -0.441 -168.06 12.731 82.43 -31.853 1.91 -8.627 -155.54
3 -0.438 -170.19 11.130 78.67 -31.881 0.06 -8.372 -155.16

3.5 -0.436 -171.74 9.762 75.22 -31.922 -1.49 -8.097 -154.53
4 -0.433 -172.93 8.565 71.97 -31.974 -2.83 -7.809 -153.84

4.5 -0.429 -173.88 7.498 68.87 -32.035 -4.02 -7.512 -153.19
5 -0.426 -174.66 6.533 65.88 -32.104 -5.10 -7.212 -152.62

5.5 -0.423 -175.31 5.650 62.97 -32.179 -6.08 -6.913 -152.15
6 -0.419 -175.87 4.834 60.15 -32.261 -6.99 -6.617 -151.80

6.5 -0.415 -176.36 4.074 57.39 -32.349 -7.82 -6.328 -151.57
7 -0.411 -176.80 3.362 54.69 -32.443 -8.60 -6.046 -151.44

7.5 -0.407 -177.20 2.691 52.04 -32.541 -9.31 -5.775 -151.41
8 -0.403 -177.56 2.055 49.45 -32.644 -9.97 -5.513 -151.48

8.5 -0.398 -177.89 1.451 46.90 -32.751 -10.57 -5.262 -151.63
9 -0.394 -178.20 0.874 44.40 -32.862 -11.12 -5.023 -151.84

9.5 -0.390 -178.48 0.322 41.95 -32.976 -11.62 -4.794 -152.12

10 -0.385 -178.75 -0.208 39.54 -33.094 -12.07 -4.576 -152.46

10.5 -0.381 -179.01 -0.717 37.17 -33.213 -12.47 -4.369 -152.84
11 -0.377 -179.26 -1.209 34.85 -33.335 -12.83 -4.172 -153.26

11.5 -0.373 -179.49 -1.684 32.56 -33.459 -13.13 -3.986 -153.72
12 -0.368 -179.72 -2.143 30.31 -33.585 -13.39 -3.809 -154.20

12.5 -0.364 -179.94 -2.588 28.11 -33.712 -13.61 -3.641 -154.71
13 -0.360 179.85 -3.019 25.93 -33.840 -13.78 -3.482 -155.24

13.5 -0.356 179.64 -3.438 23.80 -33.968 -13.91 -3.331 -155.78
14 -0.352 179.44 -3.846 21.70 -34.097 -13.99 -3.188 -156.34

14.5 -0.349 179.24 -4.242 19.63 -34.226 -14.04 -3.052 -156.91
15 -0.345 179.05 -4.628 17.60 -34.355 -14.04 -2.924 -157.48

15.5 -0.341 178.86 -5.004 15.59 -34.483 -14.00 -2.802 -158.06
16 -0.338 178.68 -5.371 13.62 -34.611 -13.92 -2.686 -158.65

16.5 -0.334 178.49 -5.729 11.68 -34.737 -13.80 -2.577 -159.23
17 -0.331 178.31 -6.079 9.77 -34.863 -13.65 -2.472 -159.82

17.5 -0.328 178.14 -6.421 7.88 -34.987 -13.45 -2.373 -160.41
18 -0.324 177.96 -6.755 6.03 -35.110 -13.23 -2.279 -160.99

18.5 -0.321 177.79 -7.082 4.20 -35.231 -12.96 -2.190 -161.57
19 -0.318 177.62 -7.401 2.39 -35.350 -12.67 -2.105 -162.15

19.5 -0.316 177.45 -7.715 0.61 -35.467 -12.34 -2.024 -162.73
20 -0.313 177.28 -8.022 -1.15 -35.582 -11.98 -1.947 -163.30

20.5 -0.310 177.12 -8.322 -2.89 -35.694 -11.59 -1.874 -163.87
21 -0.307 176.95 -8.617 -4.60 -35.804 -11.16 -1.804 -164.44

21.5 -0.305 176.79 -8.907 -6.30 -35.911 -10.71 -1.737 -164.99
22 -0.302 176.63 -9.191 -7.97 -36.015 -10.24 -1.673 -165.55

22.5 -0.300 176.47 -9.470 -9.63 -36.116 -9.73 -1.612 -166.10
23 -0.298 176.31 -9.744 -11.26 -36.214 -9.21 -1.554 -166.64

23.5 -0.295 176.15 -10.013 -12.88 -36.308 -8.65 -1.498 -167.18
24 -0.293 176.00 -10.278 -14.49 -36.399 -8.08 -1.445 -167.71

24.5 -0.291 175.84 -10.538 -16.07 -36.487 -7.48 -1.394 -168.23
25 -0.289 175.69 -10.794 -17.64 -36.571 -6.86 -1.345 -168.76

25.5 -0.287 175.53 -11.047 -19.20 -36.652 -6.23 -1.299 -169.27
26 -0.285 175.38 -11.295 -20.74 -36.729 -5.58 -1.254 -169.78

August 22, 2007

TGF2022-24

Note: The s-parameters are calculated by connecting nodes 1-4 together, and
nodes 5-8 together to form a 2-port network.

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6

1.297 [0.051]

Product Datasheet

August 22, 2007

TGF2022-24

Mechanical Drawing

RCRC B B

GATE

0.000 [0.000]

4

5

63

2

7

18

NE

0.000 [0.000]

0.115 [0.005]

0.445 [0.018]

0.944 [0.037]

0.752 [0.030]

0.560 [0.022]

0.368 [0.015]

DRAIN

0.565 [0.022]

Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)

GND IS BACKSIDE OF MMIC
Bond pads #1-4: (Gate) 0.090 x 0.090 (0.004 x 0.004)

Bond pads # 5-8: (Drain) 0.090 x 0.090 (0.004 x 0.004)

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.

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7

Assembly Process Notes

Reflow process assembly notes:

•

Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec

•

An alloy station or conveyor furnace with reducing atmosphere should be used.

• No fluxes should be utilized.

• Coefficient of thermal expansion matching is critical for long-term reliability.

• Devices must be stored in a dry nitrogen atmosphere.

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Organic attachment can be used in low-power applications.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

•

Microwave or radiant curing should not be used because of differential heating.

•

Coefficient of thermal expansion matching is critical.

Product Datasheet

August 22, 2007

TGF2022-24

Interconnect process assembly notes:

•

Thermosonic ball bonding is the preferred interconnect technique.

•

Force, time, and ultrasonics are critical parameters.

• Aluminum wire should not be used.

• Devices with small pad sizes should be bonded with 0.0007-inch wire.

• Maximum stage temperature is 200 °C.

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8