Page 1
Product Datasheet
September 7, 2007
DC - 20 GHz Discrete power pHEMT TGF2022-12
Key Features and Performance
•
Product Description
The TriQuint TGF2022-12 is a discrete
1.2 mm pHEMT which operates from
DC-20 GHz. The TGF2022-12 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
Frequency Range: DC -
•
> 31 dBm Nominal Psat
•
58% Maximum PAE
•
39 dBm
•
13 dB Nominal Power Gain
•
Suitable for high reliability applications
•
1.2mm x 0.35μm Power pHEMT
•
Nominal Bias Vd = 8-12V, Idq
Nominal OIP3
(Under RF Drive, Id rises from 90mA to 300mA)
•
Chip Dimensions: 0.57 x 0.79 x 0.10 mm
(0.022 x 0.031 x 0.004 in)
Primary Applications
•
Point-to-point Radio
•
High-reliability space
•
Military
•
Base Stations
20 GHz
= 90-150mA
•
The TGF2022-12 typically provides
> 31 dBm of saturated output power with
power gain of 13 dB. The maximum
power added efficiency is 58% which
makes the TGF2022-12 appropriate for
high efficiency applications.
The TGF2022-12 is also ideally suited for
Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2022-12 has a protective
surface passivation
layer providing
environmental robustness.
Lead-free and RoHS
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -
compliant
Broadband Wireless Applications
35
30
25
20
15
10
Maximum Gain (dB)
5
0
0246810121416
MSG
MAG
Frequency (GHz)
1
Page 2
Product Datasheet
September 7, 2007
TABLE I
TGF2022-12
MAXIMUM RATINGS
Symbol Parameter 1/
+
V
-
V
+
I
| IG | Gate Supply Current 14 mA
P
IN
P
D
T
CH
T
M
T
STG
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD.
Positive Supply Voltage 12.5 V 2/
Negative Supply Voltage Range -5V to 0V
Positive Supply Current 564 mA 2/
Input Continuous Wave Power 26 dBm 2/
Power Dissipation See note 3 2/ 3/
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Value Notes
150 °C
320 °C
-65 to 150 °C
4/
3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 °C – TBASE °C) / 69.0 (°C/W)
4/ Junction operating temperature will directly affect the device median time to failure
(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TABLE II
DC PROBE CHARACTERISTICS
= 25 °C, Nominal)
(T
A
Symbol Parameter Minimum Typical Maximum Unit
Idss Saturated Drain Current - 360 - mA
Gm Transconductance - 450 - mS
VP Pinch-off Voltage -1.5 -1 -0.5 V
V
BGS
V
BGD
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate-Drain
-30 - -8 V
-30 - -14 V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -
2
Page 3
Product Datasheet
September 7, 2007
TABLE III
RF CHARACTERIZATION TABLE 1/
(TA = 25 °C, Nominal)
SYMBOL PARAMETER f = 10 GHz f = 18 GHz UNITS
TGF2022-12
Power Tuned:
Psat
PAE
Gain
Γ
L
Efficiency
Tuned:
Psat
PAE
Gain
Γ
L
OIP3 Output TOI 40 39 40 39 dBm
2/
2/
Saturated Output Power
Power Added Efficiency
Power Gain
Load Reflection
coefficient
Saturated Output Power
Power Added Efficiency
Power Gain
Load Reflection
coefficient
Vd = 10V
Idq = 90 mA
31.9
52.4
12.9
0.579 ∠ 154
31.3
58.3
13
0.57 ∠137.5
Vd = 12V
Idq = 90 mA
32.6
51.9
12.9
0.558 ∠145.3
32.3
56.0
13
0.576 ∠136.6
Vd = 10V
Idq = 90 mA
31.1
41.5
8.3
0.696 ∠155.4
30.5
46.0
8.5
0.759 ∠153.3
Vd = 12V
Idq = 90 mA
31.7
37.0
8.0
0.718 ∠153.2
31.1
42.5
8.3
0.791 ∠151.3
dBm
%
dB
-
dBm
%
dB
-
1/
Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz
2/
Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz
TABLE IV
THERMAL INFORMATION
Parameter Test Conditions T
Thermal Resistance
θ
JC
(channel to backside of carrier)
Vd = 12 V
Idq = 90 mA
CH
(oC)
145
θ
JC
(°C/W)
69 1.6 E+6
Pdiss = 1.08 W
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -
T
M
(HRS)
3
Page 4
Product Datasheet
Linear Model for 0.6 mm Unit pHEMT cell
September 7, 2007
TGF2022-12
Gate
PARAMETER
Lg Rg
Rgs
Cgs
R
OUT
Rdg
Cdg
+
gmVi
V
i
i
-
L
s
R
s
Rds
Cds
Rd
Ld
L
Drain
Source
Gate
Source Source
UPC
Source
UPC = 0.6mm Unit pHEMT Cell
MODEL
Rg 0.22 0.23 0.24 0.23 0.24 0.24
Rs 0.40 0.41 0.41 0.46 0.45 0.50
Vd = 8V
Idq = 45mA
Vd = 8V
Idq = 60mA
Vd = 8V
Idq = 75mA
Vd = 10V
Idq = 45mA
Vd = 10V
Idq = 60mA
Idq = 45mA
Unit pHEMT cell
Reference Plane
Drain
Vd = 12V
UNITS
Ω
Ω
Rd 0.51 0.52 0.52 0.50 0.50 0.48
gm 0.195 0.202 0.202 0.188 0.195 0.183 S
Cgs 1.50 1.63 1.70 1.64 1.73 1.71 pF
Ri 1.65 1.59 1.58 1.72 1.64 1.73
Cds 0.115 0.115 0.116 0.114 0.115 0.114 pF
Rds 243.14 247.08 255.12 278.72 279.31 302.49
Cgd 0.072 0.066 0.063 0.064 0.061 0.060 pF
Tau 5.94 6.23 6.51 6.85 6.95 7.36 pS
Ls 0.001 0.001 0.001 0.001 0.001 0.001 nH
Lg 0.108 0.108 0.108 0.108 0.108 0.108
Ld 0.121 0.120 0.118 0.118 0.118 0.117
Rgs 5110 5140 8310 5110 5420 5120
Rgd 57700 64800 74400 79400 82900 82300
Ω
Ω
Ω
nH
nH
Ω
Ω
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -
4
Page 5
Linear Model for 1.2mm pHEMT
L -
via = 0.0135 nH
(3x)
Product Datasheet
September 7, 2007
TGF2022-12
2
Gate Pads (2x)
1 4
3
UPC
Drain Pads (2x)
UPC
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -
5
Page 6
Product Datasheet
Unmatched S-parameters for 1.2 mm pHEMT
Bias Conditions: Vd = 12V, Idq = 90mA
Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang
(GHz) dB deg dB deg dB deg dB deg
0.5 -0.449 -74.97 25.960 139.64 -32.579 51.44 -7.225 -40.59
1 -0.566 -114.01 22.665 117.83 -29.857 31.56 -9.792 -62.45
1.5 -0.616 -133.49 19.905 105.89 -29.100 21.51 -11.461 -74.20
2 -0.638 -144.62 17.702 98.10 -28.810 15.62 -12.337 -81.55
2.5 -0.648 -151.74 15.902 92.30 -28.680 11.71 -12.687 -86.71
3 -0.654 -156.68 14.390 87.57 -28.620 8.88 -12.706 -90.67
3.5 -0.657 -160.33 13.087 83.49 -28.595 6.69 -12.526 -93.91
4 -0.658 -163.15 11.945 79.82 -28.592 4.91 -12.225 -96.68
4.5 -0.658 -165.41 10.926 76.44 -28.603 3.43 -11.858 -99.15
5 -0.658 -167.26 10.008 73.26 -28.624 2.15 -11.454 -101.40
5.5 -0.657 -168.83 9.170 70.24 -28.652 1.03 -11.036 -103.51
6 -0.655 -170.17 8.400 67.34 -28.687 0.03 -10.615 -105.49
6.5 -0.654 -171.35 7.687 64.53 -28.728 -0.87 -10.200 -107.39
7 -0.652 -172.39 7.022 61.80 -28.773 -1.69 -9.795 -109.22
7.5 -0.650 -173.32 6.398 59.14 -28.822 -2.44 -9.403 -110.99
8 -0.647 -174.17 5.811 56.53 -28.875 -3.13 -9.025 -112.72
8.5 -0.645 -174.94 5.256 53.97 -28.931 -3.76 -8.663 -114.40
9 -0.642 -175.66 4.729 51.46 -28.991 -4.35 -8.316 -116.05
9.5 -0.639 -176.32 4.227 48.99 -29.053 -4.89 -7.985 -117.66
10 -0.636 -176.94 3.747 46.56 -29.118 -5.38 -7.669 -119.25
10.5 -0.633 -177.53 3.288 44.16 -29.185 -5.84 -7.367 -120.81
11 -0.630 -178.08 2.847 41.79 -29.255 -6.26 -7.079 -122.34
11.5 -0.627 -178.61 2.423 39.45 -29.326 -6.65 -6.805 -123.84
12 -0.624 -179.11 2.014 37.14 -29.400 -7.00 -6.543 -125.33
12.5 -0.621 -179.60 1.619 34.86 -29.475 -7.31 -6.293 -126.79
13 -0.618 179.94 1.237 32.61 -29.551 -7.59 -6.055 -128.23
13.5 -0.614 179.49 0.867 30.38 -29.628 -7.85 -5.828 -129.65
14 -0.611 179.05 0.508 28.17 -29.707 -8.06 -5.611 -131.04
14.5 -0.608 178.63 0.160 25.99 -29.786 -8.25 -5.404 -132.42
15 -0.604 178.22 -0.180 23.83 -29.866 -8.41 -5.206 -133.78
15.5 -0.601 177.82 -0.510 21.70 -29.947 -8.54 -5.017 -135.12
16 -0.598 177.43 -0.831 19.59 -30.028 -8.64 -4.836 -136.44
16.5 -0.594 177.05 -1.145 17.49 -30.108 -8.71 -4.663 -137.75
17 -0.591 176.68 -1.452 15.42 -30.189 -8.75 -4.497 -139.03
17.5 -0.588 176.31 -1.751 13.37 -30.270 -8.76 -4.339 -140.30
18 -0.584 175.95 -2.044 11.34 -30.350 -8.75 -4.187 -141.55
18.5 -0.581 175.60 -2.330 9.33 -30.430 -8.71 -4.041 -142.79
19 -0.578 175.25 -2.611 7.33 -30.509 -8.65 -3.901 -144.01
19.5 -0.575 174.90 -2.886 5.36 -30.588 -8.56 -3.768 -145.21
20 -0.572 174.56 -3.156 3.40 -30.665 -8.44 -3.639 -146.40
20.5 -0.569 174.23 -3.421 1.46 -30.741 -8.30 -3.516 -147.57
21 -0.566 173.90 -3.681 -0.47 -30.816 -8.14 -3.397 -148.72
21.5 -0.563 173.57 -3.936 -2.38 -30.889 -7.95 -3.283 -149.87
22 -0.560 173.24 -4.187 -4.27 -30.961 -7.75 -3.174 -150.99
22.5 -0.557 172.92 -4.434 -6.15 -31.031 -7.52 -3.068 -152.11
23 -0.554 172.60 -4.677 -8.01 -31.099 -7.26 -2.967 -153.21
23.5 -0.551 172.29 -4.917 -9.86 -31.166 -6.99 -2.869 -154.30
24 -0.548 171.98 -5.153 -11.70 -31.230 -6.70 -2.775 -155.37
24.5 -0.545 171.67 -5.385 -13.52 -31.292 -6.40 -2.685 -156.43
25 -0.542 171.36 -5.614 -15.33 -31.352 -6.07 -2.597 -157.48
25.5 -0.540 171.05 -5.841 -17.12 -31.410 -5.73 -2.513 -158.51
26 -0.537 170.75 -6.064 -18.91 -31.465 -5.37 -2.432 -159.54
September 7, 2007
TGF2022-12
Note: The s-parameters are calculated by connecting nodes 1-2 together, and
nodes 3-4 together to form a 2-port network.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -
6
Page 7
0.785 [0.031]
Product Datasheet
September 7, 2007
TGF2022-12
Mechanical Drawing
NE
0.488 [0.019]
DRAIN
0.296 [0.012]
0.565 [0.022]
GATE
0.000 [0.000]
0.000 [0.000]
2
1
0.119 [0.005]
3
4
0.445 [0.018]
Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)
GND IS BACKSIDE OF MMIC
Bond pads #1-2: (Gate) 0.090 x 0.090 (0.004 x 0.004)
Bond pads #3-4: (Drain) 0.090 x 0.090 (0.004 x 0.004)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -
7
Page 8
Assembly Process Notes
Reflow process assembly notes:
•
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
•
An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
•
Microwave or radiant curing should not be used because of differential heating.
•
Coefficient of thermal expansion matching is critical.
Product Datasheet
September 7, 2007
TGF2022-12
Interconnect process assembly notes:
•
Thermosonic ball bonding is the preferred interconnect technique.
•
Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
• Maximum stage temperature is 200 °C.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -
8
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