Datasheet tgf2021-12 Datasheet

Product Datasheet

August 7, 2007

DC - 12 GHz Discrete power pHEMT TGF2021-12

Key Features and Performance

•

Frequency Range: DC -

•

> 42 dBm Nominal Psat

•

58% Maximum PAE

•

11 dB Nominal Power Gain

•

Suitable for high reliability applications

•

12mm x 0.35μm Power pHEMT

•

Nominal Bias Vd = 8-12V, Idq = 900-1500mA
(Under RF Drive, Id rises from 900mA to 2560mA)

•

Chip Dimensions: 0.57 x 2.93 x 0.10 mm

(0.022 x 0.115 x 0.004 in)

12 GHz

Product Description

The TriQuint TGF2021-12 is a discrete 12
mm pHEMT which operates from DC-12
GHz. The TGF2021-12 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.

The TGF2021-12 typically provides
42 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-12 appropriate for high efficiency
applications.

The TGF2021-12 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.

The TGF2021-has a protective surface
passivation
robustness.

layer providing environmental

Primary Applications

•

Point-to-point Radio

•

High-reliability space

•

Military

•

Base Stations

•

Broadband Wireless Applications

35

30

25

20

15

10

Maximum Gain (dB)

5

0

0 2 4 6 8 10 12 14 16

MSG

MAG

Frequency (GHz)

Lead-free and RoHS compliant

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1

Product Datasheet

August 7, 2007

TABLE I

TGF2021-12

MAXIMUM RATINGS

Symbol Parameter 1/

+

V

-

V

+

I

| IG | Gate Supply Current 70 mA

P

IN

P

D

T

CH

T

M

T

STG

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall

not exceed PD.

Positive Supply Voltage 12.5 V 2/

Negative Supply Voltage Range -5V to 0V

Positive Supply Current 5.6 A 2/

Input Continuous Wave Power 36 dBm 2/

Power Dissipation See note 3 2/ 3/

Operating Channel Temperature

Mounting Temperature (30 Seconds)

Storage Temperature

Value Notes

150 °C

320 °C

-65 to 150 °C

4/

3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:

PD(max) = (150 °C – TBASE °C) / 8.3 (°C/W)

4/ Junction operating temperature will directly affect the device median time to failure

(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.

TABLE II

DC PROBE CHARACTERISTICS

(T

= 25 °C, Nominal)

A

Symbol Parameter Minimum Typical Maximum Unit

Idss Saturated Drain Current - 3600 - mA

Gm Transconductance - 4500 - mS

VP Pinch-off Voltage -1.35 -1 -0.65 V

V

BGS

V

BGD

Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown

Breakdown Voltage

Gate-Source

Breakdown Voltage

Gate-Drain

-30 - -8 V

-30 - -15 V

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2

Product Datasheet

August 7, 2007

TABLE III

RF CHARACTERIZATION TABLE

(TA = 25 °C, Nominal)

SYMBOL PARAMETER

Power Tuned:

Psat

PAE

Gain

Γ

2/

L

Efficiency Tuned:

Psat

PAE

Gain

Γ

2/

L

Saturated Output Power

Power Added Efficiency

Load Reflection coefficient

Saturated Output Power

Power Added Efficiency

Load Reflection coefficient

Power Gain

Power Gain

Vd = 10V

Idq = 900mA

0.947 ∠ 177.7

0.956 ∠ 176.2

41.5

49

11

41

58

11.5

1/

Vd = 12V

Idq = 900mA

0.947 ∠ 176.9

0.955 ∠ 175.8

TGF2021-12

42

47

11

41.8

52

11

UNITS

dBm

%

dB

-

dBm

%

dB

-

1/

Values in this table are scaled from measurements taken from a

2/

Optimum load impedance for maximum power or maximum PAE at 10 GHz

1.5mm unit pHEMT cell at 10 GHz

TABLE IV

THERMAL INFORMATION

Parameter Test Conditions TCH

θ

Thermal Resistance

JC

(channel to backside of
carrier)

Vd = 10 V
Idq = 900 mA
Pdiss = 9 W

o

(

C)

145

θ

JC

(°C/W)

8.3

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.

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T

M

(HRS)

1.6E+6

3

Product Datasheet

A

A

A

A

Linear Model for 1.5mm Unit pHEMT Cell

August 7, 2007

TGF2021-12

Gate

MODEL

PARAMETER

Lg Rg

Rgs

Cgs

R

OUT

Rdg

Cdg

+

gmVi

V

i

i

-

L

s

R

s

Rds

Cds

Rd

Ld

L

Drain

Unit pHEMT cell

Reference Plane

Source

Source Source

Gate

Drain

UPC

Source

UPC = 1.5 mm Unit pHEMT Cell

Vd = 8 V

Idq = 112.5 m

Rg 0.430 0.430 0.430 0.430 0.430 0.430

Vd = 8 V

Idq = 150 mA

Vd = 8 V

Idq = 187.5 m

Vd = 10 V

Idq = 112.5 m

Vd = 10 V

Idq = 150 mA

Vd = 12 V

Idq = 112.5 m

UNITS

Ω

Rs 0.090 0.080 0.008 0.100 0.090 0.110

Rd 0.320 0.320 0.330 0.300 0.320 0.280

gm 0.450 0.457 0.445 0.426 0.429 0.407 S

Cgs 3.504 3.770 3.938 3.800 3.974 3.945 pF

Ri

Cds 0.300 0.303 0.306 0.301 0.304 0.301 pF

Rds 100.040 102.720 107.550 116.310 118.32 127.590

Cgd 0.170 0.158 0.150 0.151 0.147 0.143 pF

Tau 6.640 7.050 7.470 7.600 7.920 8.260 pS

Ls 0.070 0.070 0.070 0.070 0.070 0.070 nH

Lg 0.098 0.098 0.098 0.098 0.098 0.098

Ld 0.042 0.040 0.040 0.040 0.039 0.039

Rgs 28700 26700 24000 25500 29500 18100

Rgd 282000 304000 217000 30400 312000 241000

0.950 0.940 0.960 0.960 0.980 0.990

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Ω

Ω

Ω

Ω

nH

nH

Ω

Ω

4

Linear Model for 12mm pHEMT

L -

via = 0.0135 nH

(9x)

Product Datasheet

August 7, 2007

TGF2021-12

Gate Pads (8x)

8 9

7 10

6 11

5 12

4 13

UPC

UPC

UPC

UPC

UPC

Drain Pads (8x)

3 14

2 15

1 16

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UPC

UPC

UPC

5

Product Datasheet

TGF2021-12

Unmatched S-parameter for 12mm pHEMT

Bias Conditions: Vd=12V Idq=900mA

Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang
(GHz) dB deg dB deg dB deg dB deg

0.5 -0.174 -170.57 16.046 91.04 -42.423 4.64 -1.989 -177.60
1 -0.173 -175.33 10.021 84.91 -42.446 2.14 -1.958 -177.91

1.5 -0.171 -176.93 6.460 80.41 -42.518 1.29 -1.927 -177.64
2 -0.170 -177.76 3.903 76.35 -42.621 0.92 -1.889 -177.26

2.5 -0.168 -178.26 1.889 72.50 -42.751 0.83 -1.842 -176.86
3 -0.165 -178.61 0.216 68.79 -42.905 0.96 -1.788 -176.48

3.5 -0.163 -178.88 -1.226 65.20 -43.081 1.29 -1.728 -176.14
4 -0.160 -179.09 -2.501 61.73 -43.276 1.84 -1.665 -175.84

4.5 -0.157 -179.26 -3.650 58.35 -43.484 2.62 -1.598 -175.59
5 -0.154 -179.41 -4.700 55.08 -43.702 3.63 -1.530 -175.39

5.5 -0.151 -179.54 -5.670 51.92 -43.925 4.88 -1.461 -175.24
6 -0.148 -179.66 -6.575 48.85 -44.148 6.39 -1.393 -175.13

6.5 -0.145 -179.78 -7.425 45.90 -44.364 8.15 -1.326 -175.07
7 -0.141 -179.88 -8.227 43.04 -44.569 10.16 -1.261 -175.04

7.5 -0.138 -179.98 -8.987 40.28 -44.756 12.41 -1.198 -175.04
8 -0.135 179.92 -9.712 37.62 -44.918 14.88 -1.137 -175.08

8.5 -0.133 179.83 -10.403 35.05 -45.052 17.55 -1.079 -175.14
9 -0.130 179.74 -11.065 32.57 -45.151 20.38 -1.024 -175.22

9.5 -0.128 179.65 -11.701 30.18 -45.212 23.34 -0.972 -175.32

10 -0.125 179.56 -12.312 27.88 -45.233 26.38 -0.922 -175.44

10.5 -0.123 179.47 -12.901 25.65 -45.213 29.46 -0.876 -175.57
11 -0.121 179.39 -13.469 23.51 -45.152 32.53 -0.832 -175.72

11.5 -0.120 179.31 -14.019 21.45 -45.052 35.56 -0.790 -175.87
12 -0.118 179.23 -14.550 19.46 -44.917 38.50 -0.751 -176.03

12.5 -0.116 179.15 -15.064 17.54 -44.749 41.33 -0.715 -176.20
13 -0.115 179.08 -15.562 15.69 -44.553 44.02 -0.681 -176.37

13.5 -0.113 179.00 -16.045 13.91 -44.333 46.57 -0.648 -176.55
14 -0.111 178.93 -16.513 12.19 -44.094 48.96 -0.618 -176.73

14.5 -0.110 178.85 -16.968 10.52 -43.840 51.18 -0.590 -176.91
15 -0.108 178.78 -17.410 8.91 -43.575 53.25 -0.563 -177.09

15.5 -0.107 178.70 -17.841 7.35 -43.302 55.15 -0.538 -177.27
16 -0.105 178.63 -18.260 5.84 -43.023 56.92 -0.514 -177.45

16.5 -0.104 178.55 -18.670 4.38 -42.742 58.54 -0.492 -177.64
17 -0.103 178.48 -19.070 2.97 -42.459 60.03 -0.471 -177.82

17.5 -0.101 178.41 -19.460 1.59 -42.177 61.40 -0.451 -178.00
18 -0.100 178.34 -19.843 0.26 -41.897 62.66 -0.433 -178.18

18.5 -0.099 178.26 -20.217 -1.03 -41.620 63.81 -0.415 -178.36
19 -0.098 178.19 -20.584 -2.29 -41.346 64.88 -0.399 -178.54

19.5 -0.097 178.12 -20.944 -3.50 -41.076 65.85 -0.383 -178.72
20 -0.096 178.05 -21.298 -4.69 -40.810 66.75 -0.368 -178.90

20.5 -0.096 177.98 -21.646 -5.83 -40.549 67.58 -0.354 -179.07
21 -0.095 177.91 -21.989 -6.95 -40.293 68.34 -0.341 -179.24

21.5 -0.094 177.83 -22.326 -8.03 -40.042 69.04 -0.328 -179.42
22 -0.093 177.76 -22.658 -9.08 -39.795 69.68 -0.316 -179.59

22.5 -0.093 177.69 -22.986 -10.10 -39.554 70.28 -0.304 -179.76
23 -0.092 177.62 -23.310 -11.10 -39.318 70.83 -0.294 -179.92

23.5 -0.091 177.55 -23.629 -12.07 -39.086 71.34 -0.283 179.91
24 -0.091 177.48 -23.946 -13.01 -38.859 71.81 -0.273 179.74

24.5 -0.090 177.41 -24.259 -13.94 -38.637 72.24 -0.264 179.58
25 -0.090 177.35 -24.569 -14.85 -38.419 72.64 -0.255 179.42

25.5 -0.089 177.28 -24.877 -15.75 -38.206 73.01 -0.246 179.26
26 -0.089 177.21 -25.184 -16.63 -37.997 73.35 -0.238 179.10

Note: The s-parameters are calculated by connecting nodes 1-8 together, and
nodes 9-16 together to form a 2-port network.

August 7, 2007

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6

Mechanical Drawing

Product Datasheet

August 7, 2007

TGF2021-12

GATE

2.930 [0.115]

2.829 [0.111]

2.585 [0.102]

2.265 [0.089]

1.945 [0.077]

1.625 [0.064]

1.305 [0.051]

0.985 [0.039]

0.665 [0.026]

0.345 [0.014]

0.096 [0.004]

0.000 [0.000]

18

8

7

6

5

4

3

2

1

9

10

11

12

13

14

15

16

17

2.618 [0.103]

2.265 [0.089]

1.945 [0.077]

1.625 [0.064]

1.305 [0.051]

0.985 [0.039]

0.665 [0.026]

0.313 [0.012]

DRAIN

0.263 [0.010]

0.469 [0.018]

0.095 [0.004]

0.000 [0.000]

0.565 [0.022]

Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)

GND IS BACKSIDE OF MMIC
Bond pads # 1-8: (Gate) 0.090 x 0.090 (0.004 x 0.004)

Bond pads # 9-16: (Drain) 0.090 x 0.090 (0.004 x 0.004)
Bond Pad #17: (Vg*) 0.090 x 0.090 (0.004 x 0.004)
Bond Pad #18: (Vg*) 0.090 x 0.090 (0.004 x 0.004)

*Note: Bond pads #17 & 18 are alternate gate pads
that can be used for paralleling FETs.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.

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c

Assembly Process Notes

Reflow process assembly notes:

Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 se

•

• An alloy station or conveyor furnace with reducing atmosphere should be used.

• Do not use flux

• Coefficient of thermal expansion matching is critical for long-term reliability.

Devices must be stored in a dry nitrogen atmosphere.

•

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

Organic attachment can be used in low-power applications.

•

Curing should be done in a convection oven; proper exhaust is a safety concern.

•

Microwave or radiant curing should not be used because of differential heating.

•

Coefficient of thermal expansion matching is critical.

•

Product Datasheet

August 7, 2007

TGF2021-12

Interconnect process assembly notes:

Thermosonic ball bonding is the preferred interconnect technique.

•

Force, time, and ultrasonics are critical parameters.

•

Aluminum wire should not be used.

•

Devices with small pad sizes should be bonded with 0.0007-inch wire.

•

Maximum stage temperature is 200 °C.

•

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8