Datasheet tgf2021-08 Datasheet

Product Datasheet

August 7, 2007

DC - 12 GHz Discrete power pHEMT TGF2021-08

Key Features and Performance

•

Frequency Range: DC -

•

> 39 dBm Nominal Psat

•

59% Maximum PAE

•

11 dB Nominal Power Gain

•

Suitable for high reliability applications

•

8mm x 0.35μm Power pHEMT

•

Nominal Bias Vd = 8-12V, Idq
(Under RF Drive, Id rises from 600mA to 1920mA)

•

Chip Dimensions: 0.57 x 2.42 x 0.10 mm

(0.022 x 0.095 x 0.004 in)

12 GHz

= 600-1000mA

Product Description

The TriQuint TGF2021-08 is a discrete 8mm
pHEMT which operates from DC-12 GHz.
The TGF2021-08 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.

The TGF2021-08 typically provides
> 39 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-08 appropriate for high efficiency
applications.

The TGF2021-08 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.

The TGF2021-08 has a protective surface
passivation
robustness.

layer providing environmental

Primary Applications

•

Point-to-point Radio

•

High-reliability space

•

Military

•

Base Stations

•

Broadband Wireless Applications

35

30

25

20

15

10

Maximum Gain (dB)

5

0

0246810121416

MSG

MAG

Frequency (GHz)

Lead-free and RoHS

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compliant

1

Product Datasheet

August 7, 2007

TABLE I

TGF2021-08

MAXIMUM RATINGS

Symbol Parameter 1/

+

V

-

V

+

I

| IG | Gate Supply Current 56 mA

P

IN

P

D

T

CH

T

M

T

STG

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall

not exceed PD.

Positive Supply Voltage 12.5 V 2/

Negative Supply Voltage Range -5V to 0V

Positive Supply Current 3.8 A 2/

Input Continuous Wave Power 34 dBm 2/

Power Dissipation See note 3 2/ 3/

Operating Channel Temperature

Mounting Temperature (30 Seconds)

Storage Temperature

Value Notes

150 °C

320 °C

-65 to 150 °C

4/

3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:

PD(max) = (150 °C – TBASE °C) / 10.8 (°C/W)

4/ Junction operating temperature will directly affect the device median time to failure

(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.

TABLE II

DC PROBE CHARACTERISTICS

= 25 °C, Nominal)

(T

A

Symbol Parameter Minimum Typical Maximum Unit

Idss Saturated Drain Current - 2400 - mA

Gm Transconductance - 3000 - mS

VP Pinch-off Voltage -1.35 -1 -0.65 V

V

BGS

V

BGD

Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown

Breakdown Voltage

Gate-Source

Breakdown Voltage

Gate-Drain

-30 - -8 V

-35 - -15 V

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2

Product Datasheet

August 7, 2007

TABLE III

RF CHARACTERIZATION TABLE

(TA = 25 °C, Nominal)

SYMBOL PARAMETER

Power Tuned:

Psat

PAE

Gain

2/

Γ

L

Efficiency Tuned:

Psat

PAE

Gain

2/

Γ

L

Saturated Output Power

Power Added Efficiency

Load Reflection coefficient

Saturated Output Power

Power Added Efficiency

Load Reflection coefficient

Power Gain

Power Gain

Vd = 10V

Idq = 600mA

0.923 ∠ 176.3

0.937 ∠ 173.7

39.8

50

11

39

59

11.5

1/

Vd = 12V

Idq = 600mA

0.921 ∠ 175.4

0.934 ∠ 173.1

TGF2021-08

40.5

48

11

39.7

55

11

UNITS

dBm

%

dB

-

dBm

%

dB

-

1/

Values in this table are scaled from measurements taken from a

2/

Optimum load impedance for maximum power or maximum PAE at 10 GHz

1mm unit pHEMT cell at 10 GHz

TABLE IV

THERMAL INFORMATION

T

Parameter Test Conditions

θ

Thermal Resistance

JC

(channel to backside of
carrier)

Vd = 12 V
Idq = 600 mA
Pdiss = 7.2 W

CH

o

(

C)

148

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.

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θ

JC

(°C/W)

(HRS)

10.8 1.2 E+6

T

M

3

Product Datasheet

Linear Model for 1mm Unit pHEMT cell

August 7, 2007

TGF2021-08

Gate

MODEL

PARAMETER

Lg Rg

Rgs

Cgs

R

OUT

Rdg

Cdg

+

gmVi

V

i

i

-

L

s

R

s

Rds

Cds

Rd

Ld

L

Drain

Source

Source Source

Gate

Drain

UPC

Source

UPC = 1mm Unit pHEMT Cell

Vd = 8V

Idq = 75mA

Rg 0.45 0.45 0.45 0.45 0.450 0.45

Rs 0.14 0.14 0.14 0.17 0.160 0.19

Vd = 8V

Idq = 100mA

Vd = 8V

Idq = 125mA

Vd = 10V

Idq = 75mA

Vd = 10V

Idq = 100mA

Vd = 12V

Idq = 75mA

Unit pHEMT cell

Reference Plane

UNITS

Ω

Ω

Rd 0.41 0.43 0.46 0.41 0.450 0.410

gm 0.310 0.318 0.314 0.296 0.303 0.286 S

Cgs 2.392.582.702.612.742.72pF

Ri

Cds 0.20 0.201 0.201 0.198 0.199 0.196 pF

Rds 149.1 152.3 158.8 171.8 173.7 187.9

Cgd 0.115 0.107 0.101 0.101 0.098 0.096 pF

Tau 6.29 6.63 6.99 7.19 7.410 7.79 pS

Ls

Lg 0.089 0.089 0.089 0.089 0.089 0.089

Ld 0.120 0.120 0.120 0.120 0.120 0.120

Rgs 33000 33000 35100 28900 35700 24400

Rgd 349000 425000 405000 305000 366000 238000

1.22 1.19 1.20 1.24 1.23 1.27

0.009 0.009 0.009 0.009 0.010 0.010 nH

Ω

Ω

Ω

nH

nH

Ω

Ω

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4

Linear Model for 8mm pHEMT

L -

via = 0.0135 nH

(9x)

Product Datasheet

August 7, 2007

TGF2021-08

Gate Pads (8x)

8 9

7 10

6 11

5 12

4 13

UPC

UPC

UPC

UPC

UPC

Drain Pads (8x)

3 14

2 15

1 16

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UPC

UPC

UPC

5

Product Datasheet

August 7, 2007

TGF2021-08

Unmatched S-parameter for 8mm pHEMT

Bias Conditions: Vd=12V, Idq=600mA

Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang
(GHz) dB deg dB deg dB deg dB deg

0.5 -0.219 -165.41 19.074 93.88 -39.703 6.63 -2.938 -175.24
1 -0.218 -172.72 13.085 86.79 -39.685 2.29 -2.874 -176.34

1.5 -0.216 -175.20 9.538 82.14 -39.733 0.41 -2.829 -176.18
2 -0.215 -176.46 6.995 78.13 -39.810 -0.81 -2.776 -175.74

2.5 -0.213 -177.22 4.997 74.41 -39.911 -1.72 -2.713 -175.22
3 -0.210 -177.75 3.340 70.85 -40.033 -2.43 -2.641 -174.70

3.5 -0.207 -178.14 1.917 67.41 -40.175 -2.98 -2.561 -174.21
4 -0.204 -178.44 0.662 64.08 -40.335 -3.39 -2.475 -173.77

4.5 -0.201 -178.69 -0.466 60.84 -40.512 -3.65 -2.384 -173.39
5 -0.197 -178.90 -1.494 57.69 -40.703 -3.77 -2.290 -173.06

5.5 -0.194 -179.08 -2.443 54.62 -40.907 -3.73 -2.196 -172.80
6 -0.190 -179.25 -3.326 51.64 -41.121 -3.54 -2.101 -172.60

6.5 -0.187 -179.39 -4.154 48.74 -41.344 -3.19 -2.007 -172.45
7 -0.183 -179.53 -4.935 45.92 -41.574 -2.67 -1.914 -172.36

7.5 -0.179 -179.66 -5.676 43.18 -41.807 -1.99 -1.824 -172.31
8 -0.175 -179.78 -6.382 40.52 -42.041 -1.13 -1.737 -172.31

8.5 -0.172 -179.89 -7.055 37.94 -42.275 -0.11 -1.653 -172.34
9 -0.168 180.00 -7.701 35.44 -42.504 1.08 -1.573 -172.40

9.5 -0.165 179.89 -8.321 33.01 -42.727 2.43 -1.497 -172.50

10 -0.162 179.79 -8.917 30.65 -42.943 3.95 -1.424 -172.62

10.5 -0.159 179.68 -9.492 28.36 -43.148 5.62 -1.354 -172.76
11 -0.155 179.58 -10.047 26.14 -43.342 7.45 -1.289 -172.92

11.5 -0.153 179.49 -10.583 23.98 -43.522 9.43 -1.226 -173.09
12 -0.150 179.39 -11.103 21.88 -43.683 11.58 -1.168 -173.28

12.5 -0.147 179.30 -11.606 19.85 -43.822 13.87 -1.112 -173.47
13 -0.144 179.20 -12.094 17.87 -43.933 16.28 -1.060 -173.68

13.5 -0.142 179.11 -12.569 15.94 -44.015 18.79 -1.010 -173.90
14 -0.139 179.02 -13.029 14.07 -44.066 21.36 -0.964 -174.12

14.5 -0.137 178.93 -13.477 12.25 -44.085 23.96 -0.920 -174.34
15 -0.135 178.84 -13.913 10.48 -44.074 26.55 -0.878 -174.57

15.5 -0.133 178.75 -14.338 8.75 -44.033 29.12 -0.839 -174.80
16 -0.131 178.66 -14.752 7.06 -43.965 31.64 -0.803 -175.03

16.5 -0.129 178.58 -15.156 5.42 -43.871 34.10 -0.768 -175.26
17 -0.128 178.49 -15.551 3.81 -43.755 36.47 -0.735 -175.49

17.5 -0.126 178.40 -15.936 2.25 -43.619 38.75 -0.704 -175.73
18 -0.124 178.32 -16.314 0.72 -43.465 40.93 -0.674 -175.96

18.5 -0.123 178.23 -16.683 -0.78 -43.296 43.00 -0.647 -176.19
19 -0.122 178.15 -17.044 -2.24 -43.114 44.96 -0.620 -176.42

19.5 -0.120 178.06 -17.398 -3.67 -42.922 46.81 -0.595 -176.65
20 -0.119 177.98 -17.746 -5.08 -42.721 48.56 -0.572 -176.88

20.5 -0.118 177.90 -18.087 -6.45 -42.512 50.19 -0.549 -177.10
21 -0.117 177.82 -18.422 -7.80 -42.299 51.72 -0.528 -177.33

21.5 -0.116 177.73 -18.751 -9.12 -42.082 53.15 -0.508 -177.55
22 -0.115 177.65 -19.076 -10.41 -41.862 54.48 -0.489 -177.77

22.5 -0.114 177.57 -19.395 -11.69 -41.640 55.71 -0.470 -177.99
23 -0.113 177.49 -19.709 -12.94 -41.418 56.86 -0.453 -178.20

23.5 -0.112 177.41 -20.020 -14.17 -41.196 57.91 -0.436 -178.42
24 -0.111 177.33 -20.326 -15.38 -40.975 58.88 -0.421 -178.63

24.5 -0.110 177.25 -20.628 -16.57 -40.755 59.77 -0.406 -178.84
25 -0.110 177.17 -20.927 -17.74 -40.539 60.58 -0.391 -179.05

25.5 -0.109 177.09 -21.222 -18.90 -40.327 61.31 -0.377 -179.25
26 -0.109 177.01 -21.515 -20.04 -40.121 61.98 -0.364 -179.46

Note: The s-parameters are calculated by connecting nodes 1-8 together, and nodes
9-16 together to form a 2-port network.

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6

Mechanical Drawing

Product Datasheet

August 7, 2007

TGF2021-08

GATE

2.418 [0.095]

2.323 [0.091]

2.105 [0.083]

1.849 [0.073]

1.593 [0.063]

1.337 [0.053]

1.081 [0.043]

0.825 [0.032]

0.569 [0.022]

0.313 [0.012]

0.096 [0.004]

0.000 [0.000]

0.263 [0.010]

17

8

7

6

5

9

10

11

12

2.122 [0.084]

DRAIN

4

3

2

1

18

13

14

15

16

0.297 [0.012]

0.000 [0.000]

0.095 [0.004]

Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)

GND IS BACKSIDE OF MMIC
Bond pads #1-8: (Gate) 0.090 x 0.090 (0.004 x 0.004)

Bond pads #9-16: (Drain) 0.090 x 0.090 (0.004 x 0.004)
Bond pad #17: (Vg*) 0.090 x 0.090 (0.004 x 0.004)
Bond pad #18: (Vg*) 0.090 x 0.090 (0.004 x 0.004)

*Note: Bond pads #17 & 18 are alternate gate pads
that can be used for paralleling FETs.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.

0.565 [0.022]

0.263 [0.010]

0.461 [0.018]

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c

Assembly Process Notes

Reflow process assembly notes:

• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 se

• An alloy station or conveyor furnace with reducing atmosphere should be used.

• Do not use flux

• Coefficient of thermal expansion matching is critical for long-term reliability.

• Devices must be stored in a dry nitrogen atmosphere.

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Organic attachment can be used in low-power applications.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

• Microwave or radiant curing should not be used because of differential heating.

• Coefficient of thermal expansion matching is critical.

Product Datasheet

August 7, 2007

TGF2021-08

Interconnect process assembly notes:

• Thermosonic ball bonding is the preferred interconnect technique.

• Force, time, and ultrasonics are critical parameters.

• Aluminum wire should not be used.

• Devices with small pad sizes should be bonded with 0.0007-inch wire.

• Maximum stage temperature is 200 °C.

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8