Datasheet tgf2021-04 Datasheet

Product Datasheet

August 7, 2007

DC - 12 GHz Discrete power pHEMT TGF2021-04

Key Features and Performance

•

Frequency Range: DC -

•

> 36 dBm Nominal Psat

•

59% Maximum PAE

•

11 dB Nominal Power Gain

•

Suitable for high reliability applications

•

4mm x 0.35μm Power pHEMT

•

Nominal Bias Vd = 8-12V, Idq
(Under RF Drive, Id rises from 300mA to 960mA)

•

Chip Dimensions: 0.57 x 1.30 x 0.10 mm

(0.022 x 0.051 x 0.004 in)

12 GHz

= 300-500mA

Product Description

The TriQuint TGF2021-04 is a discrete 4 mm
pHEMT which operates from DC-12 GHz.
The TGF2021-04 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.

The TGF2021-04 typically provides
> 36 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-04 appropriate for high efficiency
applications.

The TGF2021-04 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.

The TGF2021-04 has a protective surface
passivation
robustness.

layer providing environmental

Primary Applications

•

Point-to-point Radio

•

High-reliability space

•

Military

•

Base Stations

•

Broadband Wireless Applications

35

30

25

20

15

10

Maximum Gain (dB)

5

0

0246810121416

MSG

MAG

Frequency (GHz)

Lead-free and RoHS

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compliant

1

Product Datasheet

August 7, 2007

TABLE I

TGF2021-04

MAXIMUM RATINGS

Symbol Parameter 1/

+

V

-

V

+

I

| IG | Gate Supply Current 28 mA

P

IN

P

D

T

CH

T

M

T

STG

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall

not exceed PD.

Positive Supply Voltage 12.5 V 2/

Negative Supply Voltage Range -5V to 0V

Positive Supply Current 1.8 A 2/

Input Continuous Wave Power 31 dBm 2/

Power Dissipation See note 3 2/ 3/

Operating Channel Temperature

Mounting Temperature (30 Seconds)

Storage Temperature

Value Notes

150 °C

320 °C

-65 to 150 °C

4/

3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:

PD(max) = (150 °C – TBASE °C) / 21.7 (°C/W)

4/ Junction operating temperature will directly affect the device median time to failure

(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.

TABLE II

DC PROBE CHARACTERISTICS

(T

= 25 °C, Nominal)

A

Symbol Parameter Minimum Typical Maximum Unit

Idss Saturated Drain Current - 1200 - mA

Gm Transconductance - 1500 - mS

VP Pinch-off Voltage -1.35 -1 -0.65 V

V

BGS

V

BGD

Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown

Breakdown Voltage

Gate-Source

Breakdown Voltage

Gate-Drain

-30 - -8 V

-30 - -15 V

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Product Datasheet

August 7, 2007

TABLE III

RF CHARACTERIZATION TABLE

(TA = 25 °C, Nominal)

SYMBOL PARAMETER

Power Tuned:

Psat

PAE

Gain

Γ

2/

L

Efficiency Tuned:

Psat

PAE

Gain

Γ

2/

L

Saturated Output Power

Power Added Efficiency

Load Reflection coefficient

Saturated Output Power

Power Added Efficiency

Load Reflection coefficient

Power Gain

Power Gain

Vd = 10V

Idq = 300mA

0.852 ∠ 1725

0.879 ∠ 167.5

36.8

50

11

36

59

11.5

1/

Vd = 12V

Idq = 300mA

0.849 ∠ 170.7

0.874 ∠ 166.3

37.5

48

11

36.7

55

11

TGF2021-04

UNITS

dBm

%

dB

-

dBm

%

dB

-

1/

Values in this table are scaled from measurements taken from a

2/

Optimum load impedance for maximum power or maximum PAE at 10 GHz

1mm unit pHEMT cell at 10 GHz

TABLE IV

THERMAL INFORMATION

T

Parameter Test Conditions

θ

Thermal Resistance

JC

(channel to backside of
carrier)

Vd = 12 V
Idq = 300 mA
Pdiss = 3.6 W

CH

o

C)

(

148

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.

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θ

JC

(°C/W)

21.7 1.2 E+6

T

M

(HRS)

3

Product Datasheet

Linear Model for 1mm Unit pHEMT cell

August 7, 2007

TGF2021-04

Gate

MODEL

PARAMETER

Lg Rg

Rgs

Cgs

R

OUT

Rdg

Cdg

+

gmVi

V

i

i

-

L

s

R

s

Rds

Cds

Rd

Ld

L

Drain

Source

Source Source

Gate

Drain

UPC

Source

UPC = 1mm Unit pHEMT Cell

Vd = 8V

Idq = 75mA

Rg 0.45 0.45 0.45 0.45 0.450 0.45

Rs 0.14 0.14 0.14 0.17 0.160 0.19

Vd = 8V

Idq = 100mA

Vd = 8V

Idq = 125mA

Vd = 10V

Idq = 75mA

Vd = 10V

Idq = 100mA

Vd = 12V

Idq = 75mA

Unit pHEMT cell

Reference Plane

UNITS

Ω

Ω

Rd 0.41 0.43 0.46 0.41 0.450 0.410

gm 0.310 0.318 0.314 0.296 0.303 0.286 S

Cgs 2.392.582.702.612.742.72pF

Ri

Cds 0.20 0.201 0.201 0.198 0.199 0.196 pF

Rds 149.1 152.3 158.8 171.8 173.7 187.9

Cgd 0.115 0.107 0.101 0.101 0.098 0.096 pF

Tau 6.29 6.63 6.99 7.19 7.410 7.79 pS

Ls

Lg 0.089 0.089 0.089 0.089 0.089 0.089

Ld 0.120 0.120 0.120 0.120 0.120 0.120

Rgs 33000 33000 35100 28900 35700 24400

Rgd 349000 425000 405000 305000 366000 238000

1.22 1.19 1.20 1.24 1.23 1.27

0.009 0.009 0.009 0.009 0.010 0.010 nH

Ω

Ω

Ω

nH

nH

Ω

Ω

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4

Product Datasheet

TGF2021-04

Linear Model for 4mm pHEMT

L -

via = 0.0135 nH

UPC

Gate Pads (4x) Drain Pads (4x)

3 6

UPC

(5x)

54

August 7, 2007

2

UPC

1

UPC

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8

5

Product Datasheet

TGF2021-04

Unmatched S-parameter for 4mm pHEMT

Bias Conditions: Vd=12V, Idq=300mA

Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang
(GHz) dB deg dB deg dB deg dB deg

0.5 -0.365 -146.77 23.560 103.23 -35.222 15.89 -6.160 -161.81
1 -0.379 -163.15 17.793 91.99 -34.982 7.33 -5.842 -168.07

1.5 -0.380 -168.86 14.297 86.04 -34.977 4.06 -5.709 -169.15
2 -0.379 -171.78 11.782 81.48 -35.024 2.20 -5.581 -168.96

2.5 -0.377 -173.57 9.808 77.50 -35.099 0.95 -5.439 -168.34
3 -0.374 -174.80 8.176 73.84 -35.194 0.03 -5.280 -167.59

3.5 -0.370 -175.70 6.779 70.36 -35.308 -0.66 -5.108 -166.83
4 -0.366 -176.41 5.551 67.03 -35.437 -1.16 -4.925 -166.13

4.5 -0.362 -176.98 4.452 63.81 -35.581 -1.51 -4.735 -165.51
5 -0.358 -177.46 3.454 60.68 -35.739 -1.72 -4.541 -165.01

5.5 -0.353 -177.87 2.537 57.64 -35.908 -1.78 -4.346 -164.61
6 -0.348 -178.24 1.686 54.67 -36.087 -1.70 -4.152 -164.31

6.5 -0.343 -178.56 0.891 51.78 -36.275 -1.48 -3.962 -164.12
7 -0.337 -178.86 0.142 48.96 -36.469 -1.12 -3.776 -164.02

7.5 -0.332 -179.14 -0.566 46.21 -36.668 -0.61 -3.596 -164.01
8 -0.327 -179.40 -1.238 43.53 -36.870 0.05 -3.423 -164.07

8.5 -0.321 -179.64 -1.880 40.92 -37.073 0.85 -3.258 -164.19
9 -0.316 -179.88 -2.493 38.36 -37.274 1.80 -3.099 -164.38

9.5 -0.311 179.90 -3.082 35.87 -37.473 2.89 -2.948 -164.62

10 -0.306 179.68 -3.648 33.45 -37.667 4.12 -2.805 -164.90

10.5 -0.301 179.48 -4.193 31.08 -37.856 5.50 -2.669 -165.21
11 -0.296 179.27 -4.720 28.77 -38.039 7.02 -2.541 -165.56

11.5 -0.291 179.07 -5.229 26.51 -38.212 8.69 -2.419 -165.94
12 -0.286 178.88 -5.722 24.31 -38.373 10.53 -2.304 -166.33

12.5 -0.282 178.69 -6.200 22.16 -38.516 12.52 -2.196 -166.75
13 -0.277 178.50 -6.664 20.07 -38.638 14.65 -2.093 -167.18

13.5 -0.273 178.32 -7.114 18.02 -38.733 16.90 -1.997 -167.62
14 -0.269 178.13 -7.552 16.02 -38.801 19.23 -1.906 -168.07

14.5 -0.265 177.95 -7.979 14.07 -38.839 21.61 -1.820 -168.53
15 -0.261 177.77 -8.395 12.16 -38.849 24.03 -1.738 -168.99

15.5 -0.258 177.60 -8.800 10.29 -38.830 26.44 -1.662 -169.45
16 -0.254 177.42 -9.195 8.47 -38.784 28.84 -1.590 -169.92

16.5 -0.251 177.25 -9.581 6.68 -38.712 31.19 -1.521 -170.39
17 -0.248 177.08 -9.958 4.93 -38.616 33.48 -1.457 -170.86

17.5 -0.245 176.91 -10.328 3.22 -38.498 35.70 -1.396 -171.33
18 -0.242 176.74 -10.689 1.54 -38.361 37.83 -1.338 -171.79

18.5 -0.239 176.57 -11.043 -0.11 -38.207 39.87 -1.283 -172.26
19 -0.237 176.40 -11.390 -1.72 -38.037 41.81 -1.231 -172.72

19.5 -0.234 176.24 -11.730 -3.31 -37.855 43.65 -1.182 -173.18
20 -0.232 176.07 -12.064 -4.87 -37.661 45.38 -1.135 -173.63

20.5 -0.230 175.91 -12.392 -6.39 -37.458 47.01 -1.091 -174.08
21 -0.228 175.74 -12.715 -7.90 -37.248 48.53 -1.049 -174.53

21.5 -0.226 175.58 -13.032 -9.37 -37.032 49.95 -1.009 -174.97
22 -0.224 175.42 -13.345 -10.83 -36.812 51.26 -0.971 -175.41

22.5 -0.222 175.26 -13.653 -12.25 -36.588 52.47 -0.934 -175.85
23 -0.220 175.10 -13.957 -13.66 -36.362 53.59 -0.900 -176.28

23.5 -0.218 174.94 -14.256 -15.05 -36.135 54.61 -0.867 -176.71
24 -0.217 174.78 -14.552 -16.41 -35.908 55.53 -0.836 -177.13

24.5 -0.216 174.62 -14.844 -17.76 -35.682 56.35 -0.806 -177.55
25 -0.214 174.46 -15.133 -19.09 -35.460 57.08 -0.777 -177.97

25.5 -0.213 174.31 -15.418 -20.40 -35.242 57.72 -0.750 -178.38
26 -0.212 174.15 -15.701 -21.70 -35.032 58.28 -0.724 -178.79

August 7, 2007

Note: The s-parameters are calculated by connecting nodes 1-4 together, and nodes
5-8 together to form a 2-port network.

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6

1.297 [0.051]

Product Datasheet

August 7, 2007

TGF2021-04

Mechanical Drawing

NE

GATE

1.019 [0.040]

0.763 [0.030]

0.507 [0.020]

0.251 [0.010]

0.000 [0.000]

4

2

18

0.000 [0.000]

0.099 [0.004]

5

63

7

0.565 [0.022]

0.465 [0.018]

DRAIN

Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)

GND IS BACKSIDE OF MMIC
Bond pads #1-4: (Gate) 0.090 x 0.090 (0.004 x 0.004)

Bond pads # 5-8: (Drain) 0.090 x 0.090 (0.004 x 0.004)

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.

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Assembly Process Notes

c

Reflow process assembly notes:

• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 se

• An alloy station or conveyor furnace with reducing atmosphere should be used.

• Do not use flux

• Coefficient of thermal expansion matching is critical for long-term reliability.

• Devices must be stored in a dry nitrogen atmosphere.

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

•

Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Organic attachment can be used in low-power applications.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

• Microwave or radiant curing should not be used because of differential heating.

•

Coefficient of thermal expansion matching is critical.

Product Datasheet

August 7, 2007

TGF2021-04

Interconnect process assembly notes:

•

Thermosonic ball bonding is the preferred interconnect technique.

• Force, time, and ultrasonics are critical parameters.

• Aluminum wire should not be used.

• Devices with small pad sizes should be bonded with 0.0007-inch wire.

• Maximum stage temperature is 200 °C.

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8