Datasheet tgf2021-02 Datasheet

Product Datasheet

35

August 7, 2007

DC - 12 GHz Discrete power pHEMT TGF2021-02

Key Features and Performance

•

Product Description

Frequency Range: DC -

•

> 33 dBm Nominal Psat

•

59% Maximum PAE

•

11 dB Nominal Power Gain

•

Suitable for high reliability applications

•

2mm x 0.35μm Power pHEMT

•

Nominal Bias Vd = 8-12V, Idq
(Under RF Drive, Id rises from 150mA to 480mA)

•

Chip Dimensions: 0.57 x 0. 79 x 0.10 mm

(0.022 x 0.031 x 0.004 in)

12 GHz

= 150-250mA

The TriQuint TGF2021-02 is a discrete
2 mm pHEMT which operates from DC­12 GHz. The TGF2021-02 is designed
using TriQuint’s proven standard

0.35um power pHEMT production
process.

The TGF2021-02 typically provides
> 33 dBm of saturated output power
with power gain of 11 dB. The
maximum power added efficiency is
59% which makes the TGF2021-02
appropriate for high efficiency
applications.

The TGF2021-02 is also ideally suited
for Point-to-point Radio, High-reliability
space, and Military applications.

The TGF2021-02 has a protective
surface passivation

layer providing

environmental robustness.

Primary Applications

•

Point-to-point Radio

•

High-reliability space

•

Military

•

Base Stations

•

Broadband Wireless Applications

30

25

20

15

10

Maximum Gain (dB)

5

0

0246810121416

MSG

MAG

Frequency (GHz)

Lead-free and RoHS

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compliant

1

Product Datasheet

August 7, 2007

TABLE I

TGF2021-02

MAXIMUM RATINGS

Symbol Parameter 1/

+

V

-

V

+

I

| IG | Gate Supply Current 14 mA

P

IN

P

D

T

CH

T

M

T

STG

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall

not exceed PD.

Positive Supply Voltage 12.5 V 2/

Negative Supply Voltage Range -5V to 0V

Positive Supply Current 940 mA 2/

Input Continuous Wave Power 28 dBm 2/

Power Dissipation See note 3 2/ 3/

Operating Channel Temperature

Mounting Temperature (30 Seconds)

Storage Temperature

Value Notes

150 °C

320 °C

-65 to 150 °C

4/

3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:

PD(max) = (150 °C – TBASE °C) / 43.3 (°C/W)

4/ Junction operating temperature will directly affect the device median time to failure

(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.

TABLE II

DC PROBE CHARACTERISTICS

= 25 °C, Nominal)

(T

A

Symbol Parameter Minimum Typical Maximum Unit

Idss Saturated Drain Current - 600 - mA

Gm Transconductance - 750 - mS

VP Pinch-off Voltage -1.35 -1 -0.65 V

V

BGS

V

BGD

Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown

Breakdown Voltage

Gate-Source

Breakdown Voltage

Gate-Drain

-30 - -8 V

-30 - -15 V

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TABLE III

RF CHARACTERIZATION TABLE

(TA = 25 °C, Nominal)

SYMBOL PARAMETER

Power Tuned:

Psat

PAE

Gain

Γ

2/

L

Saturated Output Power

Power Added Efficiency

Load Reflection coefficient

Power Gain

Vd = 10V

Idq = 150mA

0.728 ∠ 164.8

33.8

50

11

Product Datasheet

1/

Vd = 12V

Idq = 150mA

0.725 ∠ 161.1

34.5

48

11

August 7, 2007

TGF2021-02

UNITS

dBm

%

dB

-

Efficiency Tuned:

Psat

PAE

Gain

Γ

2/

L

Saturated Output Power

Power Added Efficiency

Power Gain

Load Reflection coefficient

33

59

11.5

0.778 ∠ 155

1/

Values in this table are scaled from measurements taken from a

2/

Optimum load impedance for maximum power or maximum PAE at 10 GHz

TABLE IV

THERMAL INFORMATION

33.7

55

11

0.771 ∠ 152.5

dBm

%

dB

-

1mm unit pHEMT cell at 10 GHz

Parameter Test Conditions T

θ

Thermal Resistance

JC

(channel to backside of carrier)

Vd = 12 V
Idq = 150 mA

CH

(oC)

148

θ

JC

(°C/W)

43.3 1.2 E+6

T

M

(HRS)

Pdiss = 1.8 W

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.

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3

Product Datasheet

Linear Model for 1mm Unit pHEMT cell

August 7, 2007

TGF2021-02

Gate

MODEL

PARAMETER

Lg Rg

Rgs

Cgs

R

OUT

Rdg

Cdg

+

gmVi

V

i

i

-

L

s

R

s

Rds

Cds

Rd

Ld

L

Drain

Source

Source Source

Gate

UPC

Drain

Source

UPC = 1 mm Unit pHEMT Cell

Vd = 8V

Idq = 75mA

Rg 0.45 0.45 0.45 0.45 0.450 0.45

Rs 0.14 0.14 0.14 0.17 0.160 0.19

Vd = 8V

Idq = 100mA

Vd = 8V

Idq = 125mA

Vd = 10V

Idq = 75mA

Vd = 10V

Idq = 100mA

Vd = 12V

Idq = 75mA

Unit pHEMT cell

Reference Plane

UNITS

Ω

Ω

Rd 0.41 0.43 0.46 0.41 0.450 0.410

gm 0.310 0.318 0.314 0.296 0.303 0.286 S

Cgs 2.392.582.702.612.742.72pF

Ri

Cds 0.20 0.201 0.201 0.198 0.199 0.196 pF

Rds 149.1 152.3 158.8 171.8 173.7 187.9

Cgd 0.115 0.107 0.101 0.101 0.098 0.096 pF

Tau 6.29 6.63 6.99 7.19 7.410 7.79 pS

Ls

Lg 0.089 0.089 0.089 0.089 0.089 0.089

Ld 0.120 0.120 0.120 0.120 0.120 0.120

Rgs 33000 33000 35100 28900 35700 24400

Rgd 349000 425000 405000 305000 366000 238000

1.22 1.19 1.20 1.24 1.23 1.27

0.009 0.009 0.009 0.009 0.010 0.010 nH

Ω

Ω

Ω

nH

nH

Ω

Ω

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4

Linear Model for 2mm pHEMT

L -

via = 0.0135 nH

(3x)

Product Datasheet

August 7, 2007

TGF2021-02

2

Gate Pads (2x)

1 4

3

UPC

Drain Pads (2x)

UPC

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Product Datasheet

TGF2021-02

Unmatched S-parameter for 2mm pHEMT

Bias Conditions: Vd=12V, Idq=150mA

Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang
(GHz) dB deg dB deg dB deg dB deg

0.5 -0.444 -108.860 26.175 121.91 -32.618 34.41 -11.025 -98.11
1 -0.572 -140.91 21.362 103.42 -31.423 18.42 -11.493 -127.41

1.5 -0.605 -153.69 18.095 94.44 -31.187 11.96 -11.428 -137.24
2 -0.616 -160.46 15.676 88.41 -31.135 8.45 -11.181 -140.97

2.5 -0.620 -164.67 13.761 83.63 -31.146 6.22 -10.844 -142.33
3 -0.621 -167.58 12.175 79.50 -31.191 4.65 -10.455 -142.71

3.5 -0.619 -169.72 10.819 75.76 -31.257 3.50 -10.037 -142.70
4 -0.617 -171.39 9.632 72.27 -31.340 2.63 -9.606 -142.57

4.5 -0.613 -172.74 8.574 68.95 -31.437 1.98 -9.173 -142.48
5 -0.610 -173.86 7.619 65.77 -31.546 1.49 -8.745 -142.47

5.5 -0.605 -174.82 6.745 62.70 -31.666 1.16 -8.329 -142.57
6 -0.600 -175.66 5.939 59.71 -31.795 0.96 -7.926 -142.80

6.5 -0.595 -176.41 5.190 56.80 -31.933 0.89 -7.540 -143.14
7 -0.589 -177.09 4.488 53.96 -32.077 0.95 -7.172 -143.58

7.5 -0.584 -177.71 3.828 51.18 -32.228 1.13 -6.821 -144.12
8 -0.578 -178.28 3.203 48.45 -32.384 1.44 -6.489 -144.73

8.5 -0.572 -178.81 2.610 45.78 -32.543 1.87 -6.174 -145.42
9 -0.566 -179.32 2.044 43.16 -32.704 2.42 -5.876 -146.17

9.5 -0.559 -179.80 1.503 40.59 -32.865 3.11 -5.595 -146.97

10 -0.553 179.75 0.984 38.06 -33.025 3.92 -5.330 -147.81

10.5 -0.547 179.31 0.485 35.58 -33.182 4.85 -5.079 -148.69
11 -0.541 178.88 0.005 33.15 -33.333 5.92 -4.842 -149.59

11.5 -0.535 178.47 -0.459 30.75 -33.478 7.10 -4.619 -150.52
12 -0.528 178.08 -0.908 28.40 -33.614 8.41 -4.409 -151.46

12.5 -0.522 177.69 -1.343 26.09 -33.738 9.83 -4.210 -152.42
13 -0.516 177.31 -1.765 23.82 -33.849 11.36 -4.022 -153.39

13.5 -0.510 176.94 -2.175 21.59 -33.946 12.98 -3.844 -154.36
14 -0.505 176.57 -2.574 19.39 -34.026 14.69 -3.677 -155.34

14.5 -0.499 176.21 -2.963 17.23 -34.088 16.48 -3.518 -156.32
15 -0.493 175.86 -3.341 15.10 -34.130 18.32 -3.368 -157.29

15.5 -0.488 175.51 -3.710 13.01 -34.153 20.21 -3.226 -158.27
16 -0.483 175.16 -4.071 10.95 -34.154 22.13 -3.091 -159.24

16.5 -0.477 174.82 -4.424 8.93 -34.135 24.06 -2.964 -160.21
17 -0.472 174.49 -4.769 6.93 -34.095 25.99 -2.843 -161.17

17.5 -0.467 174.15 -5.107 4.97 -34.035 27.90 -2.728 -162.13
18 -0.463 173.82 -5.439 3.03 -33.956 29.77 -2.619 -163.07

18.5 -0.458 173.49 -5.764 1.13 -33.859 31.60 -2.515 -164.02
19 -0.453 173.17 -6.083 -0.75 -33.745 33.37 -2.416 -164.95

19.5 -0.449 172.85 -6.396 -2.61 -33.615 35.08 -2.323 -165.87
20 -0.445 172.53 -6.704 -4.44 -33.473 36.72 -2.233 -166.79

20.5 -0.441 172.21 -7.007 -6.24 -33.318 38.28 -2.148 -167.69
21 -0.437 171.89 -7.306 -8.03 -33.153 39.75 -2.067 -168.59

21.5 -0.433 171.58 -7.600 -9.79 -32.979 41.15 -1.989 -169.48
22 -0.429 171.26 -7.890 -11.53 -32.798 42.46 -1.915 -170.36

22.5 -0.425 170.95 -8.176 -13.25 -32.611 43.68 -1.845 -171.23
23 -0.422 170.64 -8.459 -14.95 -32.419 44.83 -1.777 -172.10

23.5 -0.418 170.34 -8.738 -16.63 -32.224 45.89 -1.713 -172.95
24 -0.415 170.03 -9.015 -18.29 -32.026 46.87 -1.651 -173.79

24.5 -0.412 169.72 -9.288 -19.94 -31.826 47.79 -1.591 -174.63
25 -0.409 169.42 -9.559 -21.57 -31.626 48.63 -1.534 -175.46

25.5 -0.406 169.12 -9.828 -23.19 -31.426 49.40 -1.480 -176.28
26 -0.403 168.82 -10.094 -24.79 -31.226 50.10 -1.427 -177.09

Note: The s-parameters are calculated by connecting nodes 1-2 together, and
nodes 3-4 together to form a 2-port network.

August 7, 2007

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6

0.785 [0.031]

Product Datasheet

August 7, 2007

TGF2021-02

Mechanical Drawing

NE

RC B

0.504 [0.020]

GATE

0.248 [0.010]

0.000 [0.000]

Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)

23

DRAIN

1

0.000 [0.000]

0.099 [0.004]

4

0.465 [0.018]

0.565 [0.022]

GND IS BACKSIDE OF MMIC
Bond pads #1-2: (Gate) 0.090 x 0.090 (0.004 x 0.004)

Bond pads #3-4: (Drain) 0.090 x 0.090 (0.004 x 0.004)

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.

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7

c

Assembly Process Notes

Reflow process assembly notes:

• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 se

• An alloy station or conveyor furnace with reducing atmosphere should be used.

• Do not use flux

• Coefficient of thermal expansion matching is critical for long-term reliability.

• Devices must be stored in a dry nitrogen atmosphere.

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Organic attachment can be used in low-power applications.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

• Microwave or radiant curing should not be used because of differential heating.

• Coefficient of thermal expansion matching is critical.

Product Datasheet

August 7, 2007

TGF2021-02

Interconnect process assembly notes:

• Thermosonic ball bonding is the preferred interconnect technique.

• Force, time, and ultrasonics are critical parameters.

• Aluminum wire should not be used.

• Devices with small pad sizes should be bonded with 0.0007-inch wire.

• Maximum stage temperature is 200 °C.

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