Datasheet TGC1439A-EPU Datasheet (TriQuint Semiconductor)

Advance Product Information

P

18 - 20 GHz 5-Bit Phase Shifter TGC1439A-EPU

Key Features and Performance

• 0.5um pHEMT Technology

• 18-20 GHz Frequency Range

• 3º Typical RMS Phase Shift Error

• -5 dB Typical Insertion Loss

• Control Voltage: -2.5 V to -5.0 V

• Compact 1.27 mm2 Die Area

The TriQuint TGC1439A-EPU is a 5-Bit Digital Phase
Shifter MMIC design using TriQuint’s proven 0.5 µm
Power pHEMT process to support a variety of K-Band
phased array applications including satellite
communication systems.

Primary Applications

• Phased Arrays

• Satellite Communication Systems

May 3, 2000

The 5-bit design utilizes a compact topology that
achieves a 1.27 mm

2

die area, high performance and

good tolerance to control voltage variation

The TGC1439A provides a 5-Bit digital phase shift
function with a nominal -5 dB insertion loss and 3º
RMS phase shift error over a bandwidth of 18-20 GHz.

The TGC1439A requires a minimum of off-chip
components and operates with a -5.0 V to -2.5 V
control voltage range. Each device is RF tested on­wafer to ensure performance compliance. The device
is available in chip form.

TGC1439A Typical RF Performance (Fixtured) TGC1439A Typical RF Performance (Fixtured)

-3

Insertion Loss

-4

-5

-6

-7

-8

-9

-10

Insertion Loss (dB)

-11

-12

-13

17 18 19 20 21

Frequency (GHz)

hase Error

40

35

30

25

20

15

10

5

0

-5

-10

TGC1439A Typical RF Performance (Fixtured)

12

9

6

3

0

-3

-6

-9

Phase Shift Error (deg)

-12

18 GHz
19 GHz
20 GHz

0 4 8 12 16 20 24 28

Phase State

0

-2

-4

-6

-8

-10

-12

-14

Return Loss (dB)

Phase Shift Error (deg)

-16

-18

-20

17 18 19 20 21

Frequency (GHz)

Input
Output

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

1

Advance Product Information

May 3, 2000

Electrical Characteristics

TGC1439A

RECOMMENDED MAXIMUM RATINGS

Symbol Parameter Value Notes

-

V

+

I
P

D

P

IN

T

CH

T

M

T

STG

Control Voltage -8 V
Control Current 1 mA 3/
Power Dissipation 0.1 W
Input Continuous Wave Power 20 dBm
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature

150 °C
320 °C

-65 °C to 150 °C

1/, 2/

1/ These ratings apply to each individual FET

2/ Junction operating temperature will directly affect the device mean time to failure

(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.

3/ Total current for the entire MMIC

ON-WAFER RF PROBE CHARACTERISTICS

(T

= 25 °C ± 5°C)

A

Symbol Parameter Test Condition

Vctnl=0V / -2.5V

IL Insertion Loss F = 18, 19, 20 GHz

States 0 and 31

IRL Input Return

Loss

ORL Output Return

Loss

PS Phase Shift F = 18, 19, 20 GHz

1200

1000

800

600

400

Number of Devices

200

0

-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0

F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
States 0 and 31

State 31

19 GHz Reference State Insertion Loss (dB)

Limit
Min Nom Max

-5.5 -4.6 -4.0 dB

-16 -11 dB

-14 -11 dB

342 344 350 deg

Units

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

2

Advance Product Information

May 3, 2000

1400

TGC1439A

1200

1000

800

600

400

Number of Devices

200

0

-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0

19 GHz State 31 Insertion Loss (dB)

800

700

600

500

400

300

200

Number of Devices

100

0

340 341 342 343 344 345 346 347 348 349 350

19 GHz State 31 Phase Shift (deg)

Typical Fixtured Performance Over the 18-20 GHz Band

Parameter Unit -5.0 V -2.5 V

Mean Insertion Loss dB -4.9 -5.0

Mean Loss Flatness dB 0.3 0.6

Peak Amplitude Error dBpp 1.2 1.3

RMS Amplitude Error dB 0.25 0.30

Peak Phase Shift Error deg -3 / +7 -3 / +7

RMS Phase Shift Error deg 3.0 2.7

Loss Temp. Variation dB/°C -0.0048 -0.0052

Ave Input Return Loss dB -16 -15

Ave Output Return Loss dB -15 -15

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

3

Advance Product Information

Mechanical Characteristics

0.412

0.542

1.102

1.234

May 3, 2000

TGC1439A

1.693

0.750

0.354

0.000

6

4

12

5

3

0.000

Units: millimeters
Thickness: 0.1016
Chip size tolerance: +/- 0.0508
Vcntl = -5.0 V to -2.5 V
Passive device, RF IN and RF OUT designators for reference only

0.639

0.769

7

1.020

10

8

911

1.150

1.490

0.354

Bond Pad #1 (RF IN) 0.100 x 0.150
Bond Pad #2 (RF OUT) 0.100 x 0.150
Bond Pad #3 (180º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #4 (180º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #5 (90º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #6 (90º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #7 (45º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #8 (45º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #9 (22.5º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #10 (22.5º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #11 (11.25º Bit ON: V= Vcntl) 0.100 x 0.100

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

4

Advance Product Information

May 3, 2000

TGC1439A

Recommend 500
series resistance
on the control lines

Reflow process assembly notes:

•=

AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC

•=

alloy station or conveyor furnace with reducing atmosphere

•=

no fluxes should be utilized

•=

coefficient of thermal expansion matching is critical for long-term reliability

•=

storage in dry nitrogen atmosphere

ΩΩΩΩ

Chip Assembly and Bonding Diagram

Component placement and adhesive attachment assembly notes:

•=

vacuum pencils and/or vacuum collets preferred method of pick up

•=

avoidance of air bridges during placement

•=

force impact critical during auto placement

•=

organic attachment can be used in low-power applications

•=

curing should be done in a convection oven; proper exhaust is a safety concern

•=

microwave or radiant curing should not be used because of differential heating

•=

coefficient of thermal expansion matching is critical

Interconnect process assembly notes:

•=

thermosonic ball bonding is the preferred interconnect technique

•=

force, time, and ultrasonics are critical parameters

•=

aluminum wire should not be used

•=

discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

•=

maximum stage temperature: 200ΓC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

5