Datasheet TGC1430G Datasheet (TriQuint Semiconductor)

Advance Product Information

August 29, 2000

20 - 40 GHz X3 Frequency Multiplier TGC1430G

Key Features and Performance

• 0.25um pHEMT Technology

• 20 - 40 GHz Output Frequencies

• 8.5 - 13.5 GHz Fundamental Frequencies

• -15 +/- 2dB Conversion Gain

• 18 dBm Input Drive Optimum

• 15dB Fundamental Isolation

• 30dB 2nd Harmonic Isolation

Primary Applications

Chip Dimensions 1.50 mm x 2.0 mm

• Point-to-Point Radio

• Point-to-Multipoint Communications

0

-5

-10

-15

-20

-25

-30

Conversion Gain (dB)

-35

6 8 10 12 14

Input Frequency (GHz)

Conversion Gain vs Input Frequency (Input @ 18dBm) Fundamental Isolation

0

-10

-20

-30

-40

-50

-60

2nd Harmonic Suppression (dB)

-70

6 8 10 12 14

Input Frequency (GHz)

+18dBm

0

-5

-10

-15

-20

Isolation (dB)

-25

-30

-35

6 8 10 12 14

Input Frequency (GHz)

+18dBm

2nd Harmonic Suppression

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

1

Advance Product Information

August 29, 2000

TGC1430G

TGC1430G - Recommended Assembly Drawing

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Advance Product Information

Assembly Process Notes

Reflow process assembly notes:

•=

AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC

•=

alloy station or conveyor furnace with reducing atmosphere

•=

no fluxes should be utilized

•=

coefficient of thermal expansion matching is critical for long-term reliability

•=

storage in dry nitrogen atmosphere

Component placement and adhesive attachment assembly notes:

•=

vacuum pencils and/or vacuum collets preferred method of pick up

•=

avoidance of air bridges during placement

•=

force impact critical during auto placement

•=

organic attachment can be used in low-power applications

•=

curing should be done in a convection oven; proper exhaust is a safety concern

•=

microwave or radiant curing should not be used because of differential heating

•=

coefficient of thermal expansion matching is critical

August 29, 2000

TGC1430G

Interconnect process assembly notes:

•=

thermosonic ball bonding is the preferred interconnect technique

•=

force, time, and ultrasonics are critical parameters

•=

aluminum wire should not be used

•=

discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

•=

maximum stage temperature: 200ΓC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com