Datasheet TGA9083-EEU Datasheet (TriQuint Semiconductor)

TGA9083-EEU Power Amplifier

6.5 to 11.5-GHz Frequency Range

●

5-Watt Output Power at 7V , 6-W at 8V, 8-W at 9 Volt Drain Bias

●

19-dB Typical Small Signal Gain

●

40% Power Added Efficiency at 7V, 35% PAE at 9 Volt Drain Bias

●

12-dB Typical Input Return Loss, 9- dB Typical Output Return Loss

●

On-Chip Active Gate Bias Circuit Option Simplifies Biasing

●

4, 521 x 3,048 x 0,100 mm (0.178 x 0.120 x 0.004 in.)

●

PHOTO ENLARGEMENT

O R , I N C .T R I Q U I N T S E M I C O N D U C T

9083

DESCRIPTION

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

The TriQuint TGA9083 - EEU is a monolithic power amplifier which operates from 6.5 to

11.5 GHz. This device is currently classified as an Engineering Evaluation Unit. This t wo stage power
amplifier partially consists of a 2.5 -mm pHEMT driving a 11.36 -mm pHEMT at the output. The
TGA9083-EEU is capable of providing 8 Watts of output power with 35% PAE when biased at 9 Volts.
Typical 7 Volts operation provides 5 Watts of output power with a power-added efficiency of 40
percent. Typical small signal gain is 19-dB. In balanced configuration, 12 Watts of output power is
achievable with 40% PAE.

The TGA9083-EEU is fabricated using TI’s 0.25um T-gate power pHEMT process. This device offer s
either standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing. The
active gate bias (AGB) circuit requires a - 5 V supply. This amplifier's output power and high efficiency
over 6.5 to 11.5 GHz make it a viable power amp solution in applications such as point-to-point radio ,
phased-array radar, and telecommunications.

Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment
methods as well as with thermocompression and thermosonic wire -bonding processes.
The TGA9083 - EEU is supplied in chip for m and is readily assembled using automated equipment.
Ground is provided to the circuitr y through vias to the backside metallization.

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TGA9083-EEU

TYPICAL
OUTPUT POWER

TYPICAL
POWER-ADDED
EFFICIENCY

40

38

36

34

32

30

28

Pout (dBm)

26

24

22

20

6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5

Frequency

(GHz)

50

45

40

35

30

PAE (%)

25

PIN= 21 dBm

= 1.1 A

I

D

= 30 ° C

T

A

Drain Voltage:

P

= 21 dBm

IN

= 1.1 A

I

D

= 30 ° C

T

A

7 V
8 V
9 V

TYPICAL
SMALL SIGNAL GAIN

20

15

10

6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5

Frequency

(GHz)

40

35

30

25

20

15

10

Small Signal Gain (dB)

5

0

6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5

Frequency

(GHz)

Drain Voltage:

ID = 1.1 A

= 30 ° C

T

A

Drain Voltage:

7 V
8 V
9 V

7 V
8 V
9 V

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TGA9083-EEU

TYPICAL
INPUT RETURN LOSS

TYPICAL
OUTPUT RETURN LOSS

0

5

10

15

20

Input Return Loss (dB)

25

30

6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5

Frequency

0

5

10

15

(GHz)

ID = 1.1 A

= 30 ° C

T

A

Drain Voltage:

= 1.1 A

I

D

= 30 ° C

T

A

7 V
8 V
9 V

TYPICAL
DRAIN CURRENT

20

Output Return Loss (dB)

25

30

6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5

Frequency

(GHz)

3000

2500

2000

1500

Id (mA)

1000

500

0

6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5

Frequency

(GHz)

Drain Voltage:

7 V
8 V
9 V

PIN= 21 dBm

= 1.0 to 1.1 A

I

D

= 30 ° C

T

A

Drain Voltage:

7 V
8 V
9 V

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TGA9083-EEU

ABSOLUTE
MAXIMUM RATINGS

Drain supply voltage, V

...................................................................................................................... 10 V

D

Negative supply voltage range, VG ..............................................................................................-5 V to 0 V

Drain supply current, ID ................................................................................................................ 3.5 A

Power dissipation, PD, at (or below) 25 C base-plate temperature* ........................................................ 39 W

Input continuous wave power, P

.................................................................................................. 25.5 dBm

IN

Operating channel temperature, TCH** ......................................................... ..................................... 150  C

Mounting temperature (30 sec), TM .................................................................................................. 320  C

Storage temperature range, T

Ratings over operating channel temperature range, TCH(unless otherwise noted)

............................................................................................-65 to 150  C

STG

Stresses beyond those listed under “Absolute Maximum Ratings” ma y cause permanent damage to the de vice.
These are stress ratings only, and functional operation of the de vice at these or an y other conditions beyond
those indicated under “RF Characteristics” is not implied. E xposure to absolute maximum rated conditions for
extended periods may affect device reliability.

* For operation above 25 C base- plate temperature, derate linearly at the rate of 73 mW/ C.

** Operating channel temperature directly affects the de vice MTTF. For maximum life, it is recommended that

channel temperature be maintained at the low est possible level.

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TGA9083-EEU

TYPICAL S-PARAMETERS

Frequency S11 S21 S12 S22

(GHz) dB ANG(°) dB ANG(°) dB ANG(°) dB ANG(°)

6.5 -14.31 -78.1 21.77 168.2 -64.33 88.1 -14.44 114.4

6.6 -13.64 -94.1 21.69 146.0 -60.56 81.2 -14.21 89.3

6.7 -13.08 -107.7 21.42 125.7 -58.66 70.2 -14.24 69.1

6.8 -12.72 -118.8 21.09 107.0 -57.67 59.6 -14.50 50.1

6.9 -12.36 -128.4 20.74 89.7 -57.01 48.2 -14.91 34.3

7.0 -12.15 -136.9 20.40 73.4 -56.72 37.4 -15.53 17.3

7.1 -11.94 -144.3 20.12 57.9 -56.97 28.1 -16.28 1.9

7.2 -11.81 -151.0 19.88 43.1 -57.08 20.2 -16.99 -14.2

7.3 -11.71 -157.2 19.69 28.9 -57.77 11.7 -17.83 -30.1

7.4 -11.62 -163.0 19.55 14.9 -57.76 4.5 -18.52 -46.3

7.5 -11.54 -168.6 19.48 1.3 -57.76 -5.0 -19.16 -61.9

7.6 -11.48 -174.6 19.44 -12.1 -57.71 -14.8 -19.83 -75.8

7.7 -11.46 179.6 19.45 -25.4 -58.13 -28.3 -20.05 -88.6

7.8 -11.49 173.5 19.51 -38.6 -58.49 -39.3 -20.59 -98.0

7.9 -11.56 167.5 19.61 -51.8 -58.82 -50.7 -20.68 -105.8

8.0 -11.64 161.1 19.75 -65.0 -58.75 -62.5 -20.89 -108.7

8.1 -11.84 154.7 19.93 -78.4 -59.10 -79.3 -20.52 -109.5

8.2 -12.00 148.0 20.16 -92.1 -59.09 -95.6 -19.67 -108.5

8.3 -12.27 140.8 20.41 -106.1 -59.22 -113.4 -18.60 -107.9

8.4 -12.59 133.2 20.67 -120.4 -58.89 -133.1 -17.09 -109.5

8.5 -13.03 124.8 20.93 -135.0 -58.80 -149.5 -15.59 -112.4

8.6 -13.55 115.8 21.18 -150.0 -58.78 -170.2 -14.14 -117.2

8.7 -14.20 106.2 21.39 -165.3 -58.42 173.1 -12.89 -124.4

8.8 -15.00 95.7 21.56 179.2 -58.06 152.0 -11.82 -132.0

8.9 -15.96 84.3 21.67 163.6 -57.95 133.7 -10.98 -141.0

9.0 -16.95 72.4 21.72 147.9 -57.57 114.0 -10.41 -150.3

9.1 -18.19 59.3 21.71 132.2 -57.49 93.9 -9.98 -160.1

9.2 -19.31 45.4 21.63 116.7 -57.13 77.9 -9.83 -170.4

9.3 -20.44 29.9 21.49 101.3 -57.62 59.4 -9.84 179.4

9.4 -21.28 14.1 21.30 86.3 -57.57 40.5 -10.03 168.5

9.5 -21.77 -3.6 21.07 71.4 -57.59 20.7 -10.44 158.1

9.6 -21.75 -19.6 20.81 56.8 -57.61 3.4 -10.91 147.1

9.7 -21.45 -35.6 20.52 42.5 -57.36 -15.4 -11.62 136.0

9.8 -20.72 -48.2 20.24 28.3 -57.08 -32.3 -12.32 124.6

9.9 -19.95 -58.9 19.95 14.3 -56.69 -51.1 -13.23 112.1

10.0 -19.15 -68.3 19.67 0.4 -56.18 -64.5 -14.16 100.1

10.1 -18.33 -76.7 19.38 -13.4 -55.71 -80.0 -15.11 86.9

10.2 -17.51 -84.1 19.11 -27.2 -54.67 -92.3 -16.20 73.2

10.3 -16.67 -91.4 18.86 -41.1 -54.34 -106.2 -17.11 59.2

10.4 -15.95 -98.1 18.61 -55.0 -53.49 -119.4 -18.22 43.6

10.5 -15.23 -104.5 18.37 -69.0 -53.00 -133.6 -19.22 28.4

10.6 -14.62 -110.8 18.13 -83.0 -52.35 -144.6 -20.24 11.4

10.7 -13.99 -117.4 17.89 -97.2 -51.80 -155.4 -21.37 -7.1

10.8 -13.41 -123.9 17.65 -111.8 -51.56 -166.5 -22.33 -26.6

10.9 -12.87 -130.8 17.42 -126.3 -51.12 -178.6 -23.12 -50.8

11.0 -12.39 -137.8 17.17 -141.0 -50.77 170.8 -23.74 -75.6

11.1 -11.97 -145.6 16.93 -156.2 -50.69 159.1 -23.25 -104.2

11.2 -11.57 -153.5 16.64 -171.4 -50.33 147.9 -22.17 -131.1

11.3 -11.21 -162.1 16.34 173.1 -50.57 136.5 -20.63 -153.4

11.4 -10.91 -171.2 16.00 157.3 -50.76 124.9 -18.89 -174.0

11.5 -10.63 179.2 15.63 141.4 -50.93 112.2 -17.29 168.8

TA= 25 ° C, VD= +8 V , ID= 1.1 A

Reference planes for S - parameter data include bond wires as specified in the “Recom mended Assembly Diagram.”

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

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TGA9083-EEU

RF CHARACTERISTICS

THERMAL INFORMATION

EQUIVALENT
SCHEMATIC

PARAMETER TEST CONDITIONS TYP UNIT

GP Small Signal Power Gain 6.5 to 11.5 GHz 9 dB
IRL Input Return Loss 6.5 to 11.5 GHz 12 dB
ORL Output Return Loss 6.5 to 11.5 GHz 9 dB
PAE Power Added Efficiency 6.5 to 11.5 GHz 40 %
P

Output Power at 2-dB Gain Compression 6.5 to 11.5 GHz 37 dBm

2dB

IP

Output Third-order Intercept Point 6.5 to 11.5 GHz 44 dBm

3

VD=+7 V, ID=1.5 A, TA= 25 ° C unless stated

PARAMETER TEST CONDITIONS NOM UNIT

R

Thermal resistance, channel to backside 25°C Base, VD=9 V, ID=1.2 A, PD=6 W 10 °C/W

JC

-5V

G1

G2

(opt)

Gnd

active

bias

D2

-5V

(opt)

resistive

divider

G1

Q1

2.5mm

G2

Q2

11.36mm

Gnd

Gnd

D2

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RECOMMENDED

RF OutputRF Input

.01uF

.01uF

VG

VG

Vd

Vd

100 pF

100 pF

100 pF

100pF

100pF

100pF

ASSEMBLY DIAGRAM

TGA9083-EEU

Bond using three (four at RF
performance. Bond wires connected to the RF Output pad should be equal distance from center line as indicated in
drawing. Close placement of exter nal components is essential to stability.

Gate bias ( V

Drain bias ( V

) voltage can be applied from either side of MMIC.

G

) voltage should be connected to both sides of MMIC.

D

) 1.0-mil diameter, 25 to 30-mil length gold bondwires at RF Input and RF Output for optimum

OUT

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RECOMMENDED

On-chip wire bond

RF Output

RF Input

.01uF

-5 V

Vd

Vd

100pF

100pF

100pF

100pF

100pF

A
B

C

D

E

ASSEMBLY DIAGRAM
USING ACTIVE GATE
BIAS CIRCUIT

TGA9083-EEU

Bond using three (four at RF
performance. Bond wires connected to the RF Output pad should be equal distance from center line as indicated in dra wing.

) 1.0-mil diameter, 25 to 30-mil length gold bondwires at RF Input and RF Output for optimum

OUT

Close placement of external components is essential to stability.
Drain bias ( V

) voltage should be connected to both sides of MMIC.

D

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TGA9083-EEU

MECHANICAL DRAWING

41.7
5

8

41.7

120.0

115.5

112.0

104.5

97.9

89.5

89.2

86.0

51.5

8.1

5.4

0.0

14.5
4

3

A

B

C

E

D

1

7

0.0

5.9

14.5

Units: millimeters (inches)
Thickness: 0,1016 (0.004) (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad.
Chip size +/- 0,0508 (0.002)

168.4

169.0

178.0

110.0

6

53.5

2

9

9.7

Bond pad #1 (RF Input) Center two bond wires equal distance from center line
Bond pad #2 (RF Output) Center two bond wires equal distance from center line
Bond pad #3 (-V

Bond pad #4, #7 (-V
Bond pad #5, #8 (V
Bond pad #6, #9 (V

) 0,120 x 0,120 (.0047 x .0047)

AGB

) 0,120 x 0,120 (.0047 x .0047)

G

) 0,240 x 0,120 (.0094 x .0047)

D1

) 0,275 x 0,340 (.0108 x .0134)

D2

Bond pads A,B,C,D,E 0,120 x 0,120 (.0047 x .0047)

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