Datasheet TGA9070-SCC Datasheet (TriQuint Semiconductor)

Product Datasheet

23 - 29 GHz High Power Amplifier TGA9070-SCC

Key Features and Performance

• 0.25um pHEMT Technology

• 23 GHz - 29 GHz Frequency Range

• Nominal 1 Watt (28GHz) @ P1dB

• Nominal Gain of 23 dB

• Bias 7V @ 400 mA

• Chip Dimensions 4.1mm x 3.0mm

Primary Applications

•LMDS

Description

The TriQuint T GA9070-SCC is a three stage
HPA MMIC design using TriQuint’s proven

0.25 um Power pHEMT process to support
a variety of millimeter wave applications
including point-to-point digital radio, LMDS/LMCS
and Ka-band satellite spacecraft and gro und
terminals.

The three stage design consists o f a 400 um input
device driving a pair of 600 um interstage devices
followed by four 600 um output devices.

The TGA9070 provides greater t han 1W of
output power across 23-29 GHz with a ty pical
PAE of 35%. Typic al small signal gain is 23 dB.

The TGA9070 requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip f orm.

• Point-to-Point Rad io

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Product Datasheet

RECOMMENDED MAXIMUM RATINGS

TABLE I

SYMBOL PARAMETER VALUE NOTES

+

V

POSITIVE SUPPLY VOLTAGE 8 V

+

I

POSITIVE SUPPLY CURRENT 1 A 1/

P

POWER DISSIPATION 8 W

D

P

INPUT CONTINUOUS WAVE POWER 20dBm

IN

T

T

OPERATING CHANNEL TEMPERATU R E 150 0C2/ 3/

CH

T

MOUNTING TEMPERATURE (30 SECONDS) 320 0C

M

STORAGE TEMPER ATU R E -65 to 150 0C

STG

1/ Total cu rre nt for all 3 stages
2/ Junction operating temperature will directly affect the device mean time to failure (MTTF). For

maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.

3/ These ratings apply to each individual FET

TABLE II

DC PROBE TESTS (100%)

= 25 °C + 5 °C)

(T

A

NOTES SYMBOL TEST CONDITIONS 3/ LIMITS UNITS

2/

I

DSS1

STD 40 188 mA
1/ |VP1|STD0.5
1/ |VP2|STD0.5
1/ |VP3|STD0.5
1/ |VP4|STD0.5
1/ |VP5|STD0.5
1/ |V
1/ |V

| STD 12 30 V

BVGD1-5

| STD 12 30 V

BVGS1

MIN MAX

1.5

1.5

1.5

1.5

1.5

V
V
V
V
V

1/ VP, V

BVGD

, and V

are negative

BVGS

2/ Subscripts are referred to Q1, Q2, Q3, Q4, Q5 accordingly.
3/ The measurement conditions are subject to change at the manufacture’s discretion (with

appropriate notification to the buyer).

STD – Standard Test Conditions (see Table III for definitions)

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TABLE IV

ELECTRICAL CHARACTERISTICS

(T

= 25°C + 5°C)

A

Vd = 6V, Id = 400 mA

Product Datasheet

NOTE TEST MEASUREMENT

CONDITIONS

POWER OUTPUT
AT 1 dB GAIN

2/

COMPRESSION
POWER ADDED

F = 23 - 27 GHz
F = 28 GHz
F = 29 GHz

F = 23 – 29 GHz 35 %

EFFICIENCY
SMALL-SIGNAL

GAIN MAGNITUDE

F = 23 GHz
F = 24 – 28 GHz
F = 29 GHz

INPUT RETURN LOSS

F = 23 - 29 GHz -10 dB

MAGNITUDE
OUTPUT RETURN

F = 23 – 29 GHz -10 dB

LOSS MAGNITUDE

1/ RF Probe data is taken at 1 GHz steps

2/ ∆P/∆T typically –0.02dB/°C

VALUE UNITS

1/

MIN TYP MAX

28.5
29

28.5

19
20
19

30

30.5
30

21
23
21

26
28
26

dBm
dBm
dBm

dB
dB
dB

TABLE V

RELIABILITY DATA

PARAMETER BIAS CONDITIONS P

VD (V) ID (mA) (W) (C/W)

R

Thermal resistance

JC

θ

6 400 2.4 22.08 123 > 2 E6

DISS

R

JC

θ

T

CH

(°C)

MTTF
(HRS)

(channel to backside) 7 400 2.8 22.5 133 > 1 E6

Note: Assumes eutectic attach using 80/20 AuSn mounted to a 10mil CuMo Carrier at 70°C baseplate
temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.

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32

Product Datasheet

Statistical Performance Summary

30

28

26

Output Power @ 1dB Compression (dBm)

24

23 24 25 26 27 28 29

Frequency (GHz)

50

40

30

PAE (%)

20

5th
25th
50th
75th
95th

5th
25th
50th
75th
95th

10

0

23 24 25 2 6 27 28 29

Frequen cy (GHz)

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26

Product Datasheet

Statistical Performance Summary

22

Gain (dB)

18

14

10

23 24 25 26 27 28 29

Frequency (GHz )

0

-4

-8

-1 2

Input R eturn Loss (dB)

-1 6

5t h
25 th
50 th
75 th
95 th

5th
25th
50th
75th
95th

-2 0

-2 4
23 24 25 26 27 28 29

0

-4

-8

-1 2

-1 6

Out put Return Loss (dB)

-2 0

-2 4
23 2 4 25 26 2 7 28 29

Frequency (GHz)

Frequency (GHz)

5th
25th
50th
75th
95th

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Mechanical Characteristics

Product Datasheet

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Product Datasheet

Chip Assembly and Bonding Diagram

Reflow process assembly notes:

•=

AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC

•=

alloy station or conveyor furnace with reducing atmosphere

•=

no fluxes should be utilized

•=

coefficient of thermal expansion matching is critical for long-term reliability

•=

storage in dry nitrogen atmosphere

Component placement and adhesive attachment assembly notes:

•=

vacuum pencils and/or vacuum collets preferred method of pick up

•=

avoidance of air bridges during placement

•=

force impact critical during auto placement

•=

organic attachment can be used in low-power applications

•=

curing should be done in a convection oven; proper exhaust is a safety concern

•=

microwave or radiant cur ing should not be used beca use of differential heating

•=

coefficient of thermal expansion matching is critical

Interconnect proc e ss a sse mbly notes:

•=

thermosonic ball bonding is the preferred interconnect technique

•=

force, time, and ultrasonics are critical parameters

•=

aluminum wire should not be used

•=

discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

•=

maximum stage temperature: 200ΓC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

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