Datasheet TGA8810-SCC Datasheet (TriQuint Semiconductor)

TGA8810-SCC Gain Block Amplifier

2 to 10-GHz Frequency Range

●

Operates from Single 5 -V Supply

●

Unconditionally Stable

●

17-dB Typical Gain

●

Typical ± 0.6-dB Gain Flatness

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1,8796 x 1,6510 x 0,1524 mm (0.074 x 0.065 x 0.006 in.)

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O R , I N C .T R I Q U I N T S E M I C O N D U C T

8810

PHOTO ENLARGEMENT

DESCRIPTION

The TriQuint TGA8810
employ shunt feedback to pr oduce flat gain to 10 -GHz. Output power at 1- dB gain compression is
typically 17-dBm and noise figur e is 6-dB. The TGA8810-SCC uses on -chip DC blocks to allow dir ect
cascading. Three dif ferent on-chip self-bias resistors provide the flexibility of selecting bias cur rent
and RF per formance.

-SCC is a self-biased general purpose amplifier. Two gain stages

The TGA8810-SCC is available in chip for m and is readily assembled using automated equipment.
Bond pad and backside metallization is gold plated for compatibil ity with eutectic alloy attachment
methods as well as the ther mocompression and thermosonic wire-bonding processes.

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

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TGA8810-SCC

TYPICAL
SMALL SIGNAL
POWER GAIN

TYPICAL
NOISE FIGURE

20

19

18

17

16

15

Gain (dB)

14

13

12

11

10

23 4567 8910

Frequency (GHz)

7

6

5

4

3

V D1= 5 V

= 5 V

V

D2

= 25° C

T

A

V D1= 5 V

= 5 V

V

D2

= 25° C

T

A

TYPICAL
OUTPUT POWER

P

1dB

Noise Figure (dB)

2

1

0

2345678910

Frequency (GHz)

20

19

18

17

16

15

Output Power (dBm)

14

13

12

23 4567 8910

Frequency (GHz)

V D1= 5 V

= 5 V

V

D2

= 25° C

T

A

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2

TGA8810-SCC

TYPICAL
RETURN LOSS

ABSOLUTE
MAXIMUM RATINGS

0

10

20

30

V D1= 5 V

= 5 V

V

D2

= 25° C

T

A

Return Loss (dB)

40

Input

50

23 4567 8910

Output

Frequency (GHz)

Positive supply voltage, V

, VD2........................................................................................................ 8.5 V

D1

Power dissipation at (or below) 25°C base -plate temperature, PD* ...................................................... 2.4 W

Operating channel temperature, TCH** .............................................................................................. 150°C

Mounting temperature (30 sec), TM.................................................................................................. 320°C

Storage temperature range, T

Ratings over channel temperature range, TCH(unless otherwise noted)

............................................................................................-65 to 150°C

STG

Stresses beyond those listed under “Absolute Maximum Ratings” m ay cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond
those indicated under “RF Characteristics” is not implied. E xposure to absolute maximum rated conditions for
extended periods may af fect device r eliability.

* For operation above 25°C base -plate temperature, derate linearly at the rate of 5 mW/°C.

** Operating channel temperature, T

, directly af fects the device MTTF. For maximum life, it is r ecommended

CH

that channel temperature be maintained at the lowest possible level.

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3

TGA8810-SCC

TYPICAL S-PARAMETERS

Frequency S

(GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(°) (dB)

11

S

21

S

12

S

22

0.5 0.38 -104 0.03 -148 0.001 -13 0.92 -130 -30.8

1.0 0.29 -125 0.99 -177 0.003 180 0.79 165 -0.1

1.5 0.36 -134 4.24 114 0.009 122 0.48 111 12.5

2.0 0.40 -156 6.88 42 0.011 72 0.07 125 16.8

2.5 0.36 -169 7.49 -8 0.009 43 0.21 180 17.5

3.0 0.33 -173 7.58 -45 0.007 27 0.27 164 17.6

3.5 0.31 -175 7.59 -77 0.006 10 0.29 150 17.6

4.0 0.30 -175 7.53 -106 0.004 9 0.28 137 17.5

4.5 0.30 -176 7.36 -133 0.002 5 0.26 126 17.3

5.0 0.29 179 7.10 -157 0.002 2 0.22 115 17.0

5.5 0.31 -178 7.02 179 0.001 -53 0.17 109 16.9

6.0 0.33 179 6.98 156 0.001 -152 0.12 110 16.9

6.5 0.33 173 6.86 134 0.002 -178 0.07 111 16.7

7.0 0.32 166 6.90 113 0.003 169 0.04 120 16.8

7.5 0.29 156 7.01 90 0.004 173 0.02 140 16.9

8.0 0.23 140 7.22 67 0.005 168 0.00 2 17.2

8.5 0.15 110 7.48 43 0.007 177 0.02 0 17.5

9.0 0.11 33 7.75 15 0.009 175 0.03 24 17.8

9.5 0.24 -37 7.87 -15 0.011 170 0.06 52 17.9

10.0

10.5

0.44

0.64

-75

-106

7.39

6.34

-49

-83

VD1= VD2= 5 V, TA= 25°C

0.013

0.016

162
153

0.09

0.11

58
51

Reference planes for S -parameter data include bondwir es as specified in the “Recommended Assembly
Diagram”.

GAIN

17.4

16.0

RF CHARACTERISTICS

G

P

Small–signal power gain f = 2 to 10 GHz 17 dB

PARAMETER TEST CONDITIONS TYP UNIT

SWR(in) Input standing wave ratio f = 2 to 10 GHz 1.9:1 ­ SWR(out) Output standing wave ratio f = 2 to 10 GHz 1.2:1 ­ P

1dB

Output power at 1–dB gain compression f = 2 to 10 GHz 17 dBm

NF Noise figure f = 2 to 10 GHz 6 dB

∆G

Gain flatness f = 2 to 10 GHz ±0.6 dB

p

Gain temperature coefficient T BP = -40°C to 90°C f = 6 GHz -0.02 dB/°C

IP

3

Output third–order intercept point f = 5 GHz 26 dBm

VD1= VD2= 5 V, TA= 25°C (assembled per Equivalent Schematic unless other wise noted)

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

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f = 2 GHz -0.01

f = 10 GHz -0.02
f = 2 GHz 24

f = 8 GHz 25

4

TGA8810-SCC

DC CHARACTERISTICS

EQUIVALENT SCHEMATIC

PARAMETER TEST CONDITIONS TYP UNIT

I D = I D1+ I D2Total positive supply current V D1 = V D2 = 5 V 90 mA

TA= 25°C

Bond Pad #2

V

D1

Bond Pad #3

V

D2

RF Output

FET 2
500 m

RF Input

C

C

0.1 pF

1

2

0.2 pF

FET 1
500 m

5

5

9

9

6

6

R

S12RS13RS11

R

, R

, R

, R

, R

S11

S12

C

can be used in tuning for impr oved input match. For best r esults, use the assembly configuration shown in

2

S13

S21

S22

, and R

provide the flexibility of selecting bias cur rent and RF per formance. C1and

S23

R

S21RS23RS22

the “Recommended Assembly Diagram” on page 6.

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RECOMMENDED
ASSEMBLY DIAGRAM

68 pF

TGA8810-SCC

V

D2

RF Input

T.I.P.N. 3022039-1

~2.3nH

T.I.P.N. 3022039-1

~2.3nH

68 pF

RF Output

V

D1

RF connections: bond using two 1 -mil diameter, 20 to 25 -mil-length gold bond wir es at both RF Input and RF
Output for optimum RF per formance.

Close placement of external components is essential to stability .

Bond using 0 .7-mil diameter wir es on bond pads 7, 11, 13, and 14 since they ar e less than the .004 x .004
needed for 1-mil diameter wire.

Two on-chip to on -chip wire bonds are needed for bond pads 1, 2, 3, and 13.

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TGA8810-SCC

MECHANICAL DRAWING

1,6510

(0.0650)

0,9881

(0.0389)

0,7620

(0.0300)

0,6223

(0.0245)

0,1600

(0.0063)

8

1,3208

(0.0520)

7

0,9855

(0.0388)

6

1,1379

(0.0448)

1,3970

(0.0550)

2

3

1,7501

(0.0689)

1,7475

(0.0688)

4

5

(0.0600)

(0.0581)

(0.0518)

(0.0401)

(0.0059)

(0.0740)

1,5240

1,4757

1,3157

1,0185

0,1499

0,1245

(0.0049)

1

14

13

12

0

0,1854

(0.0073)

0

0,1118

(0.0044)

0,3378

(0.0133)

11

10

0,4953

(0.0195)

9

0,6604

(0.0260)

0,8306

(0.0327)

Units: millimeters (inches)
Thickness: 0,1524 (0.006) (reference only)
Chip-edge-to-bond-pad dimensions are shown to center of bond pad.
Chip size tolerance: ± 0,0508 (0.002)

Bond pad #1 (RF Input): 0,1016 x 0,1778 (0.0040 x 0.0070)
Bond pad #2 : 0,1016 x 0,1016 (0.0040 x 0.0040)
Bond pad #3 : 0,1016 x 0,1016 (0.0040 x 0.0040)
Bond pad #4 (V

): 0,1016 x 0,1016 (0.0040 x 0.0040)

D2

Bond pad #5 (RF Output): 0,0940 x 0,2540 (0.0037 x 0.0100)
Bond pad #6 (R
Bond pad #7 (R
Bond pad #8 (R
Bond pad #9 (V
Bond pad #10 (R
Bond pad #11 (R
Bond pad #12 (R

): 0,1016 x 0,1016 (0.0040 x 0.0040)

S22

): 0,1016 x 0,0787 (0.0040 x 0.0031)

S23

): 0,1067 x 0,1016 (0.0042 x 0.0040)

S21

): 0,1016 x 0,1041 (0.0040 x 0.0041)

D1

): 0,1067 x 0,1016 (0.0042 x 0.0040)

S11

): 0,1016 x 0,0787 (0.0040 x 0.0031)

S13

): 0,1016 x 0,1016 (0.0040 x 0.0040)

S12

Bond pad #13 (C2): 0,0762 x 0,0762 (0.0030 x 0.0030)
Bond pad #14 (C1): 0,0762 x 0,0762 (0.0030 x 0.0030)

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

• www.triquint.com

7