Datasheet TGA8334-SCC Datasheet (TriQuint Semiconductor)

Product Data Sheet

2 - 20 GHz Power Amplifier TGA8334-SCC

Key Features and Performance

• 2 to 20 GHz Frequency Range

• 0.4-W Output Power at 1 dB Gain
Compression at Midband

• Positive Gain Slope Across Frequency

• On-Chip Input DC-Blocking Capacitor

• 1.8:1 Input SWR at Midband, 1.3:1
Output SWR at Midband

• 8 dB Gain with +/- 1 dB Flatness

• 3.1750 x 1.8034 x 0.1524 mm (0.125 x

0.071 x 0.006 in.)

Description

The TriQuint TGA8334-SCC is a GaAs monolithic dual-gate distributed amplifier.
Small-signal gain is typically 8 dB with positive gain slope across the band. Input
and output return loss is typically greater than 9.7 dB. Five 600um gatewidth FETs
provide more than 26 dB output power at 1 dB gain compression at midband.
Ground is provided to the circuitry through vias to the backside metallization.

The TGA8334-SCC is directly cascadable with other broadband TriQuint GaAs
amplifiers, such as the TGA8300-SCC, TGA8622-SCC, and TGA8220-SCC. This
general power amplifier is suitable for a variety or wide-band applications such as
distributed networks, logging stages and oscillator buffers.

Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as the thermocompression and thermosonic wire
bonding processes. The TGA8334-SCC is supplied in chip form and is readily
assembled using automated equipment.

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TYPICAL
OUTPUT POWER
P

1dB

TYPICAL
SMALL-SIGNAL
POWER GAIN

Product Data Sheet

TGA8334-SCC

TYPICAL
RETURN LOSS

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Product Data Sheet

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TGA8334-SCC

ABSOLUTE
MAXIMUM
RATINGS

Positive supply voltage, V+……………………………………………………………………………………9 V
Positive supply current, I+…..………………………………………………………………………………

I

DSS

Negative supply voltage range, V-……………………………………………………………………………-5 V to 0 V
Gain control voltage range, V
Gain control voltage range w ith respect to positive supply voltage, V
Pow er dissipation, P

, at (or below) 25oC base-plate temperature *…………………………………..

D

Input continuous w ave pow er, P
Operating Channel temperature, T
Mounting temperature (30 sec.), T
Storage temperature range, T

…………………………………………………………………………

CTRL

…………….……………….

CT RL

-5 V to 4 V
0 V to -10 V

7.2 W

……………………………………………………………………….

IN

**…………………………………………………………………… 150oC

CH

………………………………………………………………………. 320oC

M

………………………………………………………………………….. -65 to 150oC

STG

27 dBm

Ratings over operating channel temperature range, TCH (unles s otherw ise noted).

Stresses beyond those listed under "A bs olute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics " is not implied. Exposure to absolute maximum rated conditions
for extended periods may af fect device reliability.

* For operation abov e 25

o

C base-plate temperature, derate linearly at the rate of 15.2 mW

o

C.

** Operating channel temperature directly af fects the device MTTF. For max imum life, it is rec ommended that
channel temperature be maintained at the low est possible level. These ratings apply to each individual FET.

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Product Data Sheet

TGA8334-SCC

TYPICAL S-PARAMETERS

Freque ncy S

(GHz) MAG ANG(°) M AG ANG(°) MAG ANG(°) MAG ANG(°) (dB)

11

S

21

S

12

S

22

0.5 0.62 -67 2.156 154 0.001 42 0.36 -170 6.7

1.0 0.40 -103 2.092 143 0.001 65 0.35 171 6.4

1.5 0.30 -126 2.110 128 0.002 81 0.34 159 6.5

2.0 0.24 -146 2.132 113 0.003 80 0.33 150 6.6

2.5 0.21 -163 2.156 96 0.004 75 0.31 140 6.7

3.0 0.19 -180 2.181 80 0.005 66 0.29 133 6.8

3.5 0.16 166 2.213 63 0.006 56 0.27 126 6.9

4.0 0.14 151 2.241 47 0.007 46 0.24 120 7.0

4.5 0.12 138 2.294 30 0.008 32 0.22 116 7.2

5.0 0.09 128 2.338 12 0.009 18 0.19 115 7.4

5.5 0.06 125 2.374 -6 0.009 3 0.17 115 7.5

6.0 0.04 149 2.408 -24 0.009 -14 0.15 118 7.6

6.5 0.05 -178 2.431 -42 0.009 -27 0.15 122 7.7

7.0 0.09 -172 2.459 -61 0.009 -47 0.15 124 7.8

7.5 0.14 178 2.471 -79 0.008 -66 0.15 126 7.9

8.0 0.18 165 2.458 -98 0.008 -83 0.16 125 7.8

8.5 0.22 151 2.444 -117 0.008 -100 0.16 123 7.8

9.0 0.25 136 2.432 -135 0.009 -117 0.16 120 7.7

9.5 0.27 122 2.430 -153 0.010 -134 0.16 115 7.7

10.0 0.29 107 2.451 -172 0.011 -150 0.14 109 7.8

10.5 0.29 93 2.465 170 0.012 -165 0.13 104 7.8

11.0 0.27 81 2.470 151 0.013 176 0.11 97 7.9

11.5 0.25 69 2.492 132 0.014 155 0.08 98 7.9

12.0 0.20 59 2.532 111 0.014 133 0.07 115 8.1

12.5 0.16 57 2.521 90 0.012 107 0.08 134 8.0

13.0 0.13 64 2.471 70 0.007 89 0.09 133 7.9

13.5 0.12 74 2.446 51 0.004 89 0.10 123 7.8

14.0 0.14 80 2.447 31 0.003 133 0.09 114 7.8

14.5 0.17 83 2.457 10 0.006 134 0.08 108 7.8

15.0 0.19 71 2.507 -11 0.007 110 0.07 107 8.0

15.5 0.22 56 2.557 -34 0.007 80 0.05 124 8.2

16.0 0.21 38 2.572 -57 0.007 40 0.07 150 8.2

16.5 0.19 18 2.563 -80 0.005 1 0.11 153 8.2

17.0 0.14 -6 2.574 -104 0.006 -33 0.15 147 8.2

17.5 0.09 -26 2.562 -129 0.009 -75 0.18 137 8.2

18.0 0.06 -37 2.563 -154 0.012 -114 0.19 122 8.2

19.0 0.06 -42 2.561 151 0.015 179 0.14 93 8.2

19.5 0.08 -81 2.501 122 0.015 144 0.06 102 8.0

20.0 0.05 -103 2.430 94 0.015 108 0.10 -175 7.7

GAIN

= 8 V, V

V

D

= 1 V, I D = 50% I

CTRL

, T A = 25oC,

DSS

The reference planes for S-parameter data include bond wires as specified in the “Recommended Assembly
Diagram.” The S-parameters are also available on floppy disk and the world wide web.

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Product Data Sheet

R

V

I

50% I

V

V

W

I

TGA8334-SCC

RF CHARACTERISTICS

DC CHARACTERISTICS

P ARAMETER TEST CONDITIONS TYP UNIT

G

P

p

1dB

Small-signa l powe r gain f = 2 to 20 GHz 8 dB

Output power at 1–dB gain f = 2 to 14 GHz 26 dBm

compres s ion f =14 to 18 GHz 25

∆G

p

Gain fla tne s s f = 2 to 20 GHz ±1 dB

f = 2 GHz 1.6:1 -

SWR(in) Input s tanding w ave ratio f = 9 GHz 1.7:1 -

f =18 GHz 1.1:1 -

f = 2 GHz 2.0:1 -

SWR(out) Output standing wave ratio f = 9 GHz 1.4:1 -

f =18 GHz 1.5:1 -

f = 2 GHz 38

IP

3

Output third–order intercept point f = 9 GHz 41 dBm

f =18 GHz 38

V

= 8 V, V

D

P A R A M E T ER T ES T C O ND IT IO NS M IN M A X UN IT

Total zero–gate–voltage drain current at saturation

DS S

= 1 V, I D = 50% I

CNTR

, T A = 25oC,

DSS

V

= 0.5 V to 3.5 V, V

DS

GS

= 0 V

630 1170 mA

TA = 25OC

V

for I

DS

is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC Autoprobe.

DSS

THERMAL
INFORMATION

EQUIVALENT
SCHEMATIC

P ARAMETER TEST C ONDITION NOM UNIT

Thermal res is tance (channel to backside )

θ

JC

= 8 V,

D

=

D

DS S

,

CTRL

= 1

18.7 °C/

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RECOMMENDED
TEST
CONFIGURATION

RECOMMENDED
ASSEMBLY
DIAGRAM

Product Data Sheet

TGA8334-SCC

RF connections: Bond using two 1.0-mil diameter, 20 to 25-mil-length gold bond wires at both RF Input and
RF Output.

DC blocks required at RF Output port.

Close placement of external components is essential to stability.

Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products.

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MECHANICAL
DRAWING

Product Data Sheet

TGA8334-SCC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.

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