Datasheet TGA8320-SCC Datasheet (TriQuint Semiconductor)

Product Data Sheet

Gain Block Amplifier TGA8320-SCC

Key Features and Performance

• DC to 8 GHz Frequency Range (L, S,
and C-band)

• 9.5 dB Gain

• 1.3:1 Input/Output SWR

• 17 dBm Output Power at 1 dB Gain
Compression

• Typical Noise Figure is 5 dB

• 1.066 x 1.219 x 0.152 mm (0.042 x 0.048
x 0.006 in.)

Description

The TriQuint TGA8320-SCC is a general purpose gain block amplifier, which operates
from DC to 8 GHz. Four 200 um FETs produce 9.5 dB nominal gain and a noise figure
that is 5 dB across the band. Typical input and output return loss is 16 dB at midband.
Nominal power output is 17 dBm at 1 dB gain compression. Ground is provided to the
circuitry through vias to the backside metallization.

The TGA8320-SCC gain block amplifier is suitable for a variety of military and
commercial applications such as L, S, and C-band radar systems, ECM, and
communication systems.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy
attachment methods as well as the thermocompression and thermosonic wire-bonding
processes.

The TGA8320-SCC is supplied in chip form and is readily assembled using automated
equipment.

TriQuint Semiconductor Texas : [phone] Fax: [phone] Web: www.triquint.com

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Product Data Sheet

TGS8320-SCC

TriQuint Semiconductor Texas : [phone] Fax: [phone] Web: www.triquint.com

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Product Data Sheet

TGS8320-SCC

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Product Data Sheet

G

V

+

V

I

+

A

TGS8320-SCC

TYPICAL S-PARAMETERS

Frequency

S

11

S

21

S

12

S

22

(G Hz ) MAG ANG ( °) MAG ANG (°) MAG ANG (°) MAG ANG ( °) (d B)

0.5 0.05 - 79 3.18 166 0.001 111 0.04 52 10.1

1.0 0.06 - 113 3.11 155 0.001 109 0.07 59 9.8

1.5 0.08 - 132 3.07 144 0.001 127 0.09 59 9.7

2.0 0.10 - 146 3.03 133 0.002 129 0.11 55 9.6

2.5 0.12 - 159 2.99 122 0.003 135 0.13 50 9.5

3.0 0.13 - 171 2.96 112 0.003 133 0.14 43 9.4

3.5 0.15 - 180 2.93 101 0.004 149 0.15 37 9.3

4.0 0.16 173 2.91 90 0.007 145 0.16 26 9.3

4.5 0.16 168 2.91 79 0.009 143 0.15 12 9.3

5.0 0.16 166 2.89 68 0.012 135 0.15 - 3 9.2

5.5 0.18 166 2.86 57 0.019 131 0.14 - 19 9.1

6.0 0.18 149 2.83 47 0.018 107 0. 13 -39 9.0

6.5 0.12 148 2.86 36 0.017 105 0.15 - 70 9.1

7.0 0.09 164 2.83 24 0.018 104 0.17 - 99 9.0

7.5 0.09 - 164 2.80 12 0.020 101 0.21 - 124 8.9

8.0 0.13 - 150 2.73 0 0.022 95 0.26 - 144 8.7

= 25oC, V+ = 12 V, VG2 = 1.5 V, I+ = 70 mA

T

A

Reference planes for S-parameter data include bond wires as specified in the “Recommended
Assembly Diagram”. The S-parameters are also available on floppy disk and the world wide web.

GAIN

RF CHARACTERISTICS

THERMAL
INFORMATION

P ARAMET ER TE S T CONDITIO NS T YP UNIT

P

Small- signal power gain f = DC to 8 GHz 9.5 dB

SWR(in) Input standing wave ratio f = DC to 8 GHz 1.3:1 -

SWR(out) Output standing wave ratio f = DC to 8 GHz 1.3:1 ­ P

1dB

Output power at 1–dB gain compression f = DC to 8 GHz 17 dBm

NF Nois e figure f = DC to 8 GHz 5 dB

f = 2 GHz 30

IP

3

Output third–order intercept point f = 4 GHz 31 dBm

f = 8 GHz 28

IP

2

Output second–order intercept point f = 2 GHz 33 dBm

f = 4 GHz 39

Output third harmonic at 1–dB gain compression

Output second harmonic at 1–dB gain compression

f

f

f

o

= 4 GHz

o

= 2 GHz

o

= 4 GHz

o

- 23.5 dBc*

-32

-19 dBc*

-25

= 2 GHz

f

V+ = 12 V, VG2 = 1.5 V, I+ = 70 mA, TA = 25oC

*Unit dBc applies to decibels with respect to the carrier or fundamental frequency, f

R

JC

Thermal resistance, channel to backside

Θ

PARAMETER TEST CONDITION NOM UNIT

= 12 V,

= 1 .5 V,

G2

o

= 70 m

.

27 °C/ W

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Product Data Sheet

TGS8320-SCC

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Product Data Sheet

TGS8320-SCC

Refer to TriQuint Gallium Arsenide Products Designers’ Information on TriQuint’s web site.

TriQuint Semiconductor Texas : [phone] Fax: [phone] Web: www.triquint.com

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Product Data Sheet

TGS8320-SCC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handling, assembly and test.

TriQuint Semiconductor Texas : [phone] Fax: [phone] Web: www.triquint.com

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