Datasheet TGA8310-SCC Datasheet (TriQuint Semiconductor)

T R I Q U I N T S E M I C O N D U C T O R , I N C .

TGA8310-SCC Low-Noise Amplifier

8310

2 to 20-GHz Frequency Range

●

3.5- dB Noise Figur e Midband

●

1.4:1 Typical Input/Output SWR

●

17.5- dBm Output Power at 1- dB Gain Compr ession

●

9- dB Typical Gain

●

4,115 x 2,362 x 0,102 mm (0.162 x 0.093 x 0.004 in.)

●

PHOTO ENLARGEMENT

DESCRIPTION

The TriQuint TGA8310 - SCC is a monolithic low - noise distributed amplifier, which operates
from 2 to 20- GHz. Noise figure is typically 4 - dB. Nine 122- µm gatewidth FETs typically provide

17.5- dBm of output power at 1 - dB gain compression and 9 - dB typical small signal gain. Typical input
return loss is 17-dB from 2 to 20-GHz. Typical output return loss is 20-dB. Ground is provided to
the circuitry through vias to the backside metallization.

The TGA8310 - SCC low - noise distributed amplifier is suitable for a variety of wide - band electr onic
warfare systems such as radar warning receivers, electronic counter-measures, decoys, jammers, and
phased array systems.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment
methods as well as the thermocompression and ther mosonic wir e - bonding processes. The
TGA8310 - SCC is supplied in chip form and is readily assembled using automated equipment.

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

• www.triquint.com

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TGA8310-SCC

TYPICAL
SMALL-SIGNAL
POWER GAIN

TYPICAL
NOISE FIGURE

14

12

10

8

6

Gain (dB)

4

2

0

2 4 6 8 10 12 14 16 18 20

Frequency (GHz)

8

7

6

5

4

V

= 1.5 V

CTRL

V

= 1.5 V

CTRL

+

= 60 mA

I

+

= 60 mA

I

= 25°C

T

A

T A= 25° C

V

= 1.5 V

CTRL

V

= 1.5 V

CTRL

+

+

= 60 mA

I

= 60 mA

I

= 25°C

T

T A= 25° C

A

VD = 5V

VD= 5 V

Vd = 5 V

+

+

V

= 8 V

= 8V

V

V+ = 8 V

TYPICAL
OUTPUT POWER

P

1dB

3

Noise Figure (dB)

2

1

0

2 4 6 8 10 12 14 16 18

Frequency (GHz)

22

20

18

16

14

Output Power (dBm)

12

10

2468101214161820

Frequency (GHz)

V

= 1.5 V

CTRL

V

= 1.5 V

CTRL

+

+

= 60 mA

I

= 60 mA

I

= 25°C

T

T A= 25° C

A

Vd = 5V

VD= 5 V

Vd = 5 V

+

+

V

= 8 V

V+ = 8 V

= 8V

V

Vd = 5V

VD= 5 V

Vd = 5 V

+

+

V

= 8 V

= 8V

V

V+ = 8 V

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

• www.triquint.com

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TGA8310-SCC

TYPICAL
INPUT RETURN LOSS

TYPICAL
OUTPUT RETURN LOSS

0

6

12

18

24

Input Return Loss (dB)

30

36

2 5 8 11141720

Frequency (GHz)

0

6

12

18

24

V

= 1.5 V

CTRL

V

= 1.5 V

CTRL

+

+

= 60 mA

I

= 60 mA

I
T A= 25°C

= 25°C

T

A

V

= 1.5 V

CTRL

V

= 1.5 V

CTRL

+

= 60 mA

I

+

I

= 60 mA

= 25°C

T

A

T A= 25°C

VD= 5 V

Vd = 5 V

+

V

= 8 V

V+ = 8 V

30

Output Return Loss (dB)

36

42

2 5 8 11141720

Frequency (GHz)

VD= 5 V

Vd = 5 V

+

V

= 8 V

V+ = 8 V

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

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TGA8310-SCC

ABSOLUTE
MAXIMUM RATINGS

Drain supply voltage, VD ........................................................................................................................

Positive supply voltage, V+..................................................................................................................

Positive supply voltage range with respect to negative supply voltage, V+­Positive supply voltage range with respect to gain control voltage, V
Negative supply voltage range, V
Gain control voltage range, V

..............................................................................................

G1

................................................................................................

CTRL

V

..............................

G1

-

V+ ..............................

CTR L

0 V to -13 V

Drain supply current, ID ........................................................................................................................

Positive supply current, I+ ..............................................................................................................

Power dissipation, PD, at (or below) 25 C base-plate temperature* ......................................................

Input continuous wave power, P

....................................................................................................

IN

Operating channel temperature, TCH** ..............................................................................................

Mounting temperature (30 sec), TM ....................................................................................................

Storage temperatur e range, T

Ratings over operating channel temperature range, TCH(unless otherwise noted)

............................................................................................

STG

-

65 to 150 C

9V

12 V

0 V to 13 V

-

5V to 0V

-

5V to 4V

I

188 mA

2.6 W

23 dBm

150 C

320  C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under “RF Characteristics” is not implied. Exposure to absolute maximum rated conditions for
extended periods may affect device reliability.

* For operation above 25 C base - plate temperature, derate linearly at the rate of 5.5 mW/  C.

** Operating channel temperature directly affects the device MTTF . For maximum life, it is recommended that

channel temperature be maintained at the lowest possible level.

DSS

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

• www.triquint.com

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TGA8310-SCC

TYPICAL S -PARAMETERS

Frequency S

(GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(°) (dB)

11

S

21

S

12

S

22

2.0 0.31 -154 3.32 119 0.009 61 0.22 -19 10.4

2.5 0.26 -175 3.23 96 0.010 32 0.19 -62 10.2

3.0 0.21 169 3.13 75 0.011 14 0.17 -98 9.9

3.5 0.18 155 3.06 54 0.012 -6 0.16 -132 9.7

4.0 0.15 145 3.00 35 0.013 -23 0.14 -162 9.6

4.5 0.12 137 2.97 16 0.014 -42 0.12 169 9.4

5.0 0.10 134 2.93 -3 0.014 -59 0.10 143 9.3

5.5 0.08 135 2.93 -22 0.016 -76 0.07 116 9.3

6.0 0.07 143 2.92 -41 0.018 -96 0.04 87 9.3

6.5 0.07 153 2.93 -60 0.019 -115 0.02 44 9.3

7.0 0.08 162 2.94 -79 0.021 -133 0.02 -92 9.4

7.5 0.10 162 2.95 -99 0.022 -153 0.04 -143 9.4

8.0 0.12 157 2.91 -118 0.024 -170 0.05 -170 9.3

8.5 0.13 152 2.90 -138 0.025 173 0.05 164 9.2

9.0 0.14 145 2.85 -157 0.027 156 0.05 133 9.1

9.5 0.14 137 2.83 -176 0.028 140 0.05 95 9.1

10.0 0.14 127 2.80 165 0.029 123 0.05 52 8.9

10.5 0.14 116 2.77 146 0.029 109 0.06 17 8.8

11.0 0.12 109 2.80 127 0.032 89 0.07 -25 8.9

11.5 0.11 100 2.80 107 0.032 73 0.08 -54 9.0

12.0 0.08 99 2.80 88 0.033 56 0.08 -82 8.9

12.5 0.07 107 2.80 68 0.035 37 0.07 -109 8.9

13.0 0.06 128 2.79 48 0.035 18 0.05 -141 8.9

13.5 0.07 147 2.79 28 0.037 0 0.03 153 8.9

14.0 0.09 150 2.77 8 0.038 -21 0.04 53 8.8

14.5 0.11 144 2.74 -13 0.039 -41 0.08 13 8.7

15.0 0.12 130 2.73 -33 0.041 -58 0.12 -14 8.7

15.5 0.12 121 2.70 -54 0.044 -76 0.16 -42 8.6

16.0 0.13 112 2.65 -74 0.046 -96 0.18 -70 8.5

16.5 0.14 99 2.66 -94 0.049 -115 0.18 -99 8.5

17.0 0.12 87 2.70 -115 0.052 -134 0.16 -131 8.6

17.5 0.09 81 2.71 -138 0.056 -155 0.13 -166 8.7

18.0 0.08 95 2.61 -159 0.053 -175 0.08 145 8.3

18.5 0.07 79 2.68 -180 0.056 168 0.13 57 8.6

19.0 0.04 88 2.67 156 0.058 142 0.24 -25 8.5

19.5 0.04 92 2.65 133 0.054 119 0.37 -87 8.5

20.0 0.03 86 2.64 110 0.051 102 0.34 -149 8.4

GAIN

TA= 25°C, VD= 5 V, V

Reference planes for S -parameter data include bond wires as specified in the “Recommended Assembly
Diagram.” The S -parameters are also available on floppy disk and the world wide web.

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

= 1.5 V, I+= 60 mA

CTRL

• www.triquint.com

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TGA8310-SCC

TYPICAL S -PARAMETERS

Frequency S

(GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(°) (dB)

11

S

21

S

12

S

22

2.0 0.28 -155 2.76 108 0.007 37 0.12 -133 8.8

2.5 0.23 -178 2.75 90 0.008 19 0.08 -152 8.8

3.0 0.20 165 2.74 72 0.010 4 0.05 180 8.8

3.5 0.17 151 2.77 53 0.011 -12 0.04 134 8.8

4.0 0.14 140 2.79 35 0.012 -28 0.04 86 8.9

4.5 0.11 133 2.83 16 0.013 -45 0.05 55 9.0

5.0 0.08 132 2.84 -3 0.015 -63 0.05 32 9.1

5.5 0.06 138 2.87 -22 0.016 -80 0.04 8 9.2

6.0 0.06 154 2.88 -41 0.018 -99 0.03 -28 9.2

6.5 0.06 166 2.90 -60 0.019 -117 0.03 -82 9.2

7.0 0.08 165 2.88 -79 0.021 -136 0.04 -128 9.2

7.5 0.09 165 2.91 -98 0.022 -152 0.05 -157 9.3

8.0 0.12 160 2.88 -118 0.024 -171 0.06 173 9.2

8.5 0.13 154 2.87 -137 0.026 172 0.05 143 9.2

9.0 0.15 148 2.84 -157 0.027 156 0.05 111 9.1

9.5 0.15 141 2.81 -176 0.028 140 0.06 79 9.0

10.0 0.14 131 2.78 165 0.029 124 0.07 52 8.9

10.5 0.13 122 2.76 146 0.030 104 0.06 27 8.8

11.0 0.11 112 2.78 128 0.031 91 0.07 1 8.9

11.5 0.08 105 2.79 108 0.032 73 0.06 -29 8.9

12.0 0.06 105 2.76 88 0.032 55 0.06 -58 8.8

12.5 0.04 115 2.77 69 0.033 38 0.05 -85 8.9

13.0 0.03 147 2.76 49 0.034 20 0.05 -113 8.8

13.5 0.05 163 2.76 29 0.035 1 0.04 -147 8.8

14.0 0.06 161 2.75 8 0.037 -19 0.02 -173 8.8

14.5 0.08 150 2.74 -12 0.039 -39 0.01 163 8.7

15.0 0.10 133 2.72 -33 0.040 -59 0.01 -17 8.7

15.5 0.10 116 2.71 -54 0.042 -78 0.03 -37 8.7

16.0 0.09 103 2.60 -76 0.043 -96 0.06 -60 8.3

16.5 0.09 90 2.54 -96 0.046 -112 0.07 -76 8.1

17.0 0.08 65 2.52 -117 0.048 -131 0.09 -91 8.0

17.5 0.06 45 2.49 -139 0.050 -151 0.11 -112 7.9

18.0 0.06 81 2.39 -158 0.047 -170 0.13 -129 7.6

18.5 0.09 63 2.50 -179 0.051 177 0.12 -138 8.0

19.0 0.10 72 2.45 158 0.054 155 0.12 -135 7.8

19.5 0.13 85 2.34 133 0.053 132 0.15 -120 7.4

20.0 0.15 96 2.20 110 0.053 112 0.21 -118 6.8

GAIN

TA= 25°C, V+= 8 V, V

Reference planes for S-parameter data include bond wires as specified in the “ Recommended Assembly
Diagram.” -

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

= 1.5 V, I+= 60 mA

CTRL

• www.triquint.com

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TGA8310-SCC

RF CHARACTERISTICS

PARAMETER TEST CONDITIONS TYP UNIT

G

Small-signal power gain f = 2 t o 20 GHz VD = 5 V 9.0 dB

P

V+ = 8 V 8.5

f = 2 GHz VD = 5 V 4.6

V+ = 8 V 4.4

f = 6 GHz VD = 5 V 2.7

NF Noise figure V+ = 8 V 2.5 dB

f = 10 GHz VD = 5 V 3.1

V+ = 8 V 3.2

f = 18 GHz VD = 5 V 5.6

V+ = 8 V 5.4

SWR(in) Input standing wave ratio f = 2 to 20 GHz VD = 5 V 1.4:1 --

V+ = 8 V 1.4:1

SWR(out) Output standing wave ratio f = 2 to 20 GHz VD = 5 V 1.4:1 --

V+ = 8 V 1.4:1

P

Output power at 1-dB gain compression f = 2 to 20 GHz VD = 5 V 17.5 dBm

1dB

V+ = 8 V 16.5
f = 2 G Hz 29.5
f = 6 G Hz 27.0

IP

Output third–order intercept point f = 9 GHz VD = 5 V 27.5 dBm

3

f = 1 2 G Hz 26.5
f = 1 8 G Hz 27.0

f

= 2 GHz 32.5

o

Output second–order intercept point fo = 4 GHz VD = 5 V 29.5 dBm

fo = 6 GHz 29.0

fo = 9 GHz 28.0

Output third harmonic
at 1–dB gain compression

fo = 2 G Hz -29.0
f

= 4 GHz VD = 5 V -24.5 dBc*

o

f

= 6 G Hz -19.5

o

fo = 2 G Hz -18.0
Output second harmonic fo = 4 GHz VD = 5 V -15.0 dBc*
at 1–dB gain compression fo = 6 G Hz -13.5

fo = 9 G Hz -15.5

VD= 5 V, V

= 1.5 V, I+= 60 mA, TA= 25°C

CTRL

* Unit dBc applies to decibels with respect to the carrier or fundamental frequency, fo.

DC CHARACTERISTICS

THERMAL INFORMATION

I

Zero–gate–voltage drain current at saturation V DS = 0.5 V to 3.5 V, V GS = 0 97 292 mA

DSS

VDSfor I

is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at dc autoprobe.

DSS

PARAMETER TEST CONDITIONS MIN MAX UNIT

PARAMETER TEST CONDITIONS NOM UNIT

R JCThermal resistance (channel to backside)

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

TA= 25°C

V

= 1.5 V, V + = 8 V 12

CTRL

I + = 60 mA V D = 5 V 20

• www.triquint.com

°C/W

7

TGA8310-SCC

EQUIVALENT
SCHEMATIC

TYPICAL BIAS NETWORK

V

+

V

CTRL

Input

RF

V

D

122 m 9 places

+

V

C

Bypass

=8V

V

C

CTRL

Bypass

=1.5V

5

1,2

RF Input RF Output

TGA8310

3

6,7

8

V

G1

C

Bypass

RF
Output

V

G1

TYPICAL BIAS NETWORK

(V+= 8 V)

V

V

D

C

Bypass

=5V

L

Bias

CTRL

C

Bypass

=1.5V

4

1,2

RF Input RF Output

TGA8310

3

6,7

8

V

G1

C

Bypass

(V

= 5 V)

D

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

• www.triquint.com

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TGA8310-SCC

RECOMMENDED
ASSEMBLY DIAGRAM

8 Volt Bias

V

CTRL

100pF

0.01 F

+

V

Input

RF

100pF

(V+= 8 V)

RF
Output

V

G1

RF connections: Bond using two 1 -mil diameter, 20 to 25 - mil length gold bond wires at both RF Input and RF
Output for optimum RF performance.

Close placement of external components is essential to stability.

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

• www.triquint.com

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TGA8310-SCC

RECOMMENDED
ASSEMBLY DIAGRAM

5 Volt Bias

V

CTRL

100pF

2nH

0.01 F

V

D

RF

Input

100pF

V

G1

(VD= 5 V)

The 2-nH thin-film network coil is TI par t number 3022039 - 1.

RF connections: Bond using two 1 -mil diameter, 20 to 25 - mil length gold bond wires at both RF Input and
RF Output for optimum RF performance.

Close placement of external components is essential to stability.

RF
Output

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

• www.triquint.com

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TGA8310-SCC

MECHANICAL DRAWING

2,3622

(0.0930)

1,7882

(0.0704)

1,2370

(0.0487)

0,9423

(0.0371)

0,7264

(0.0286)

0,1524

(0.0060)

0

0

3

2

1

0,1397

(0.0055)

0,5944

(0.0234)

4

1,7170

(0.0676)

5

8

2,4155

(0.0951)

3,9746

(0.1564)

6

7

4,1148

(0.1620)

1,9456

(0.0766)

0,9119

(0.0359)

0,6960

(0.0274)

0,2515

(0.0099)

Units: millimeters (inches)
Thickness: 0,1016 (0.004) (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad.
Chip size ±0,0508 (0.002)

Bond pad #1 (RF Input): 0,0940 x 0,0991 (0.0037 x 0.0039)
Bond pad #2 (RF Input): 0,0940 x 0,0991 (0.0037 x 0.0039)
Bond pad #3 (V
Bond pad #4 (V
Bond pad #5 (V

): 0,1016 x 0,1524 (0.0040 x 0.0060)

CTRL

): 0,1321 x 0,2108 (0.0052 x 0.0083)

D

+

): 0,2032 x 0,1016 (0.0080 x 0.0040)
Bond pad #6 (RF Output): 0,0940 x 0,0991 (0.0037 x 0.0039)
Bond pad #7 (RF Output): 0,0940 x 0,0991 (0.0037 x 0.0039)
Bond pad #8 (V

): 0,0965 x 0,0965 (0.0038 x 0.0038)

G1

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

• www.triquint.com

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