Datasheet TGA8286-EPU Datasheet (TriQuint Semiconductor)

Product Data Sheet

8 - 10.5 GHz Power Amplifier TGA8286-EPU

Key Features and Performance

• 8 to 10.5 GHz Frequency Range,
X-band

• Two Stage 5-W HFET Power Amplifier

• 37% P.A.E. at 2 to 3 dB Gain
Compression

• 17 dB Small Signal Gain

• Bias can be applied from either the
upper or lower edges

• 5.384 x 2.997 x 0.1016 mm (0.212 x

0.118 x 0.004 in.)

Description

The TriQuint TGA8286-EPU is a GaAs monolithic amplifier designed for use as an
X-band power amplifier. A 2.4mm and a 9.6mm HFET provide 16 dB nominal gain
from 8 to 10.5 GHz with a typical 37% power-added efficiency at 2 to 3 dB gain
compression. Ground is provided to the circuitry through vias to the backside
metallization. The TGA8286-EPU effectively addresses applications such as an X­band radar transmitter or a microwave communication transmitter.

The TGA8286-EPU is supplied in chip form and is engineered for high volume
automated assembly. All metal surfaces are gold plated to be compatiable with
thermocompression and thermosonic wire bonding processes.

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TYPICAL
OUTPUT POWER
P

3dB

TYPICAL
SMALL-SIGNAL
POWER GAIN

Product Data Sheet

TGA8286-EPU

TYPICAL
RETURN LOSS

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Product Data Sheet

…

…

…

M

TGA8286-EPU

ABSOLUTE
MAXIMUM
RATINGS

Positive supply voltage, V+…………………………………………………………………………………12 V

Positive supply voltage range w ith respect to negative supply voltage, V+ - V-……………………

Negative supply voltage range, V-………………………………………………………………………

Drain supply voltage, V

Drain supply current, I

…………………………………………………………………………………… 11 V

D

………………………………………………………………………………………3.6 mA

D

Positive supply current, I+…..……………………………………………………………………………

Pow er dissipation, P

Input c ontinuous w ave pow er, P

Operating Channel temperature, T

Mounting temperature (30 sec.), T

Storage temperature range, T

Ratings over oper ating channel temperature range, T

, at (or below ) 25oC base-plate temperature *……………………………………28.8 W

D

…………………………………………………………………………30 dBm

IN

**…………………………………………………………………… 150oC

CH

…………………………………………………………………………320oC

……………………………………………………………………………-65 to 150oC

STG

(unless otherwise noted).

CH

0 V to 13 V

-5 V to 0 V

902 mA

Stresses beyond those listed under "Abs olute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and f unc tional operation of the devic e at thes e or any other conditions beyond

those indicated under "RF Charac teristics" is not implied. Exposure to absolute maximum rated conditions

for extended periods may af f ect device reliability.

o

* For operation abov e 25

C base-plate temperature, derate linearly at the rate of 6.0 mW/oC.

** Operating channel temperature directly affects the device MTTF. For maximum life, it is recommended that

channel temperature be maintained at the low est possible level. These ratings apply to each individual FET.

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Product Data Sheet

TGA8286-EPU

TYPICAL S-PARAMETERS

Freque ncy

(GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(°) (dB)

S

11

S

21

S

12

S

22

7.5 0.54 34 4.411 -170 0.004 88 0.38 -138 12.9

7.6 0.50 27 5.064 167 0.004 74 0.33 -149 14.1

7.7 0.45 20 5.617 144 0.005 54 0.31 -158 15.0

7.8 0.41 13 6.166 122 0.005 36 0.30 -166 15.8

7.9 0.36 7 6.615 101 0.005 16 0.31 -175 16.4

8.0 0.31 0 7.112 80 0.006 0 0.33 173 17.0

8.1 0.27 -6 7.542 59 0.006 -23 0.36 160 17.6

8.2 0.22 -10 7.980 39 0.006 -46 0.37 144 18.0

8.3 0.18 -10 8.318 18 0.006 -69 0.39 127 18.4

8.4 0.15 -5 8.600 -3 0.006 -89 0.39 108 18.7

8.5 0.13 3 8.750 -24 0.007 -114 0.39 90 18.8

8.6 0.13 11 8.760 -44 0.007 -135 0.38 70 18.9

8.7 0.14 14 8.660 -64 0.007 -157 0.36 51 18.8

8.8 0.15 14 8.453 -83 0.007 -177 0.35 31 18.5

8.9 0.16 10 8.147 -102 0.007 165 0.33 14 18.2

9.0 0.16 6 7.816 -120 0.007 148 0.32 -4 17.9

9.1 0.16 3 7.516 -137 0.007 132 0.31 -20 17.5

9.2 0.16 -1 7.211 -153 0.007 116 0.31 -34 17.2

9.3 0.17 -6 6.990 -168 0.007 103 0.31 -50 16.9

9.4 0.15 -22 6.887 176 0.007 89 0.29 -63 16.8

9.5 0.10 -16 6.676 160 0.007 74 0.27 -69 16.5

9.6 0.10 0 6.494 145 0.007 60 0.27 -73 16.3

9.7 0.11 11 6.368 130 0.007 47 0.28 -78 16.1

9.8 0.13 15 6.295 115 0.007 33 0.29 -82 16.0

9.9 0.16 16 6.266 99 0.007 19 0.30 -85 15.9

10.0 0.19 12 6.273 84 0.007 2 0.32 -89 16.0

10.1 0.22 5 6.310 68 0.008 -14 0.34 -92 16.0

10.2 0.26 -3 6.331 51 0.008 -28 0.36 -97 16.0

10.3 0.30 -14 6.353 33 0.007 -43 0.39 -102 16.1

10.4 0.33 -24 6.302 15 0.008 -59 0.40 -108 16.0

10.5 0.37 -36 6.173 -5 0.008 -73 0.40 -113 15.8

10.6 0.41 -49 5.943 -24 0.009 -90 0.40 -119 15.5

10.7 0.44 -62 5.662 -44 0.009 -110 0.38 -123 15.1

10.8 0.46 -78 5.230 -65 0.009 -132 0.35 -127 14.4

10.9 0.47 -91 4.748 -85 0.008 -152 0.31 -128 13.5

11.0 0.47 -104 4.188 -105 0.008 -169 0.27 -124 12.4

11.1 0.47 -116 3.664 -123 0.007 175 0.25 -115 11.3

11.2 0.46 -127 3.122 -141 0.006 160 0.26 -103 9.9

11.3 0.45 -137 2.670 -158 0.005 150 0.30 -96 8.5

11.4 0.45 -146 2.254 -174 0.005 142 0.35 -91 7.1

11.5 0.44 -153 1.912 172 0.004 135 0.41 -91 5.6

GAIN

= 10 V, I D = 1.3 A, T A = 25oC,

V

D

Reference planes for S-parameter data include bond wires as specified in the “Recommended Assembly
Diagram.” The S-parameters are also available on floppy disk and the world wide web.

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Product Data Sheet

TGA8286-EPU

RF CHARACTERISTICS

THERMAL DATA

EQUIVALENT
SCHEMATIC

P ARAMETER TEST C ONDITIONS TYP UNIT

G

P

Small–signal powe r gain f = 8 to 10.5 GHz 16 dB

SWR(in) Input standing wa ve ratio f = 8 to 10.5 GHz 1.4:1 -

SWR(out) Output standing w ave ratio f = 8 to 10.5 GHz 1.9:1 ­ P

3dB

Output pow er at 3–dB gain c ompres s ion f = 8 to 10.5 GHz 36 dBm

Output s ec ond ha rmonic at 3–dB gain compres sion f = 9 GHz –59 dBc

f = 9 GHz 46

IP

3

Output third–order intercept point, 30MHz s ignal s pa cing f = 10 GHz 45 dBm

f = 11 GHz 44

P.A.E. Pow e r added e ffic ienc y f = 8 to 10.5 GHz 35 %

V D = 10 V, I D = 1.3 A, T A = 25oC (unless otherwise noted)

P ARAMETER TEST CONDITIONS DGFET MMIC UNIT

R

Thermal resistance,

θ

jC

channel–to–backside I

V

= 10 V,

DS(FET)

= 1.15 mA Bas e = 100°C, Channel = 161°C 5.3 4.2

D(FET)

Base = 25°C, Channel = 76°C 4.4 3.5 °C/W

MMIC mounted with 38um AuSn solder to carrier.

FET 1 = 2.4mm HFET, 2 x 1200um HFETs

FET 2 = 9.6mm HFET, 8 x 1200um HFETs

TaN resistors R

to R 24 values are in ohms and have a tolerance of +/- 16%,

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RECOMMENDED
ASSEMBLY
DIAGRAM

Product Data Sheet

TGA8286-EPU

RF connections: Thermocompression bond using three 1-mil diameter, 20 to 30-mil-length gold bonds at
RF Input and at RF Output for optimum RF performance.

A 1uF, or greater, capacitor should be attached to the gate line within 1-2 cm of the 100pF bypass capacitor
for stability.

Close placement of external components is essential to stability.

Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.

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MECHANICAL
DRAWING

Product Data Sheet

TGA8286-EPU

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.

TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Web: www.triquint.com

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