Datasheet TGA8226-SCC Datasheet (TriQuint Semiconductor)

Product Data Sheet

2 - 6 GHz Gain Block Amplifier TGA8226-SCC

Key Features and Performance

• 2 to 6 GHz Frequency Range

• 13.5 dB Gain

• 17 dBm Output Power at 1 dB Gain
Compression

• 5.5 dB Noise Figure

• Operates from Single 15V Supply

• 1.47 x 1.85 x 0.15 mm (0.058 x 0.073 x

0.006 in.)

Description

The TriQuint TGA8226-SCC is a self biased distributed amplifier and operates from
a single 15 V supply. Four 457 um FETs produce a typical gain greater than 13.5
dB, with input and output SWRs less than 2:1. Direct cascading without additional
components is possible by using the on-chip blocking capacitors. Ground is
provided to the circuitry through vias to the backside metallization.

Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as thermocompression and thermosonic wire­bonding processes. The TGA8226-SCC is available in chip form and is readily
assembled using automated equipment.

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TYPICAL
SMALL-SIGNAL
POWER GAIN

Product Data Sheet

TGA8226-SCC

TYPICAL
NOISE FIGURE

TYPICAL
OUTPUT POWER

P

1dB

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TYPICAL

…

/

INPUT RETURN LOSS

TYPICAL
OUTPUT RETURN LOSS

Product Data Sheet

TGA8226-SCC

ABSOLUTE
MAXIMUM
RATINGS

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Positive supply voltage, V+…………………………………………………………………………… 18 V
Pow er dissipation, P

Input continuous-w ave pow er, P
Operating Channel temperature, T
Mounting temperature (30 sec.), T
Storage temperature range, T

Ratings over operating channel temperature range, T

at (or below) 25oC base-plate temperature *………………………………

D

…………………………………………………………………

IN

**…………………………………………………………………150oC

CH

……………………………………………………………………320oC

M

………………………………………………………………………-65 to 150oC

STG

(unless otherwise note d).

CH

4.4 W
23 dB

Stresses beyond those listed under "A bsolute Maximum Ratings" may cause per manent damage to the device.
These are stress ratings only and f unctional operation of the device at these or any other conditions beyond
those indicated under "RF Charac teristics" is not implied. Exposure to abs olute maximum rated conditions
for extended periods may af f ect device reliability.

o

* For operation abov e 25

C base-plate temperature, derate linearly at the rate of 9.2 mW

** Operating channel temperature ( T

) directly affects the device MTTF. For maximum life, it is recommended

CH

o

C.

that channel temperature be maintained at the low est possible level.

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Product Data Sheet

TGA8226-SCC

TYPICAL S-PARAMETERS

Freque ncy

(GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(°) (dB)

S

11

S

21

S

12

S

22

0.5 0.15 7 2.70 21 0.000 30 0.21 153 8.6

1.0 0.15 -20 3.47 -6 0.001 104 0.20 125 10.8

1.5 0.14 -44 4.01 -27 0.001 124 0.21 100 12.1

2.0 0.14 -73 4.49 -49 0.002 124 0.20 80 13.1

2.5 0.13 -104 4.89 -72 0.004 119 0.20 62 13.8

3.0 0.13 -133 5.14 -95 0.006 110 0.20 48 14.2

3.5 0.14 -155 5.15 -118 0.009 88 0.20 34 14.2

4.0 0.16 -174 5.10 -139 0.008 64 0.19 22 14.2

4.5 0.18 169 5.07 -160 0.007 57 0.17 12 14.1

5.0 0.19 157 5.06 180 0.008 50 0.16 0 14.1

5.5 0.19 148 5.08 160 0.008 37 0.14 -12 14.1

6.0 0.20 140 5.13 140 0.008 21 0.12 -21 14.2

6.5 0.20 130 5.27 119 0.008 -5 0.10 -24 14.4

7.0 0.19 111 5.49 98 0.008 -33 0.08 -14 14.8

7.5 0.13 73 5.97 75 0.011 -68 0.09 -10 15.5

8.0 0.16 -38 6.73 46 0.017 -106 0.11 -24 16.6

8.5 0.50 -117 7.01 3 0.023 -154 0.13 -73 16.9

9.0 0.69 -168 5.07 -38 0.022 165 0.10 -128 14.1

9.5 0.69 162 3.37 -65 0.018 141 0.07 -160 10.6

10.0 0.65 144 2.38 -86 0.015 128 0.05 176 7.5

V+ = 15 V, TA = 25oC, DC-coupled bias and external DC blocks

GAIN

RF CHARACTERISTICS

DC CHARACTERISTICS

Reference planes for S-parameter data include bond wires as specified in the “Recommended
Assembly Diagram”. The S-parameters are also available on floppy disk and the world wide web.

P ARAMETER TEST CONDITIONS TYP UNIT

G

p

Small–s ignal pow er gain f = 2 to 6 GHz 13.5 dB

SWR(in) Input s tanding w ave ratio f = 2 to 6 GHz 1.4:1 -

SWR(out) Output standing w a ve ra tio f = 2 to 6 GHz 1.4:1 ­ P

1dB

Output pow e r a t 1–dB gain c ompres s ion f = 2 to 6 GHz 17 dBm

NF Nois e figure f = 2 to 6 GHz 5.5 dB

f = 2 GHz 26

IP

3

Output third–orde r interc e pt point f = 4 GHz 28 dBm

f = 6 GHz 27

V+ = 15 V, TA = 25oC, DC-coupled bias and external DC blocks

+

I

P ARAMETER TEST CONDITIONS TYP UNIT

Positive s upply current

= 25oC

T

A

+

V

= 15 V T

= 25°C

A

68 mA

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EQUIVALENT
SCHEMATIC

Product Data Sheet

TGA8226-SCC

TYPICAL BIAS
NETWORK

(DC-Blocked Bias Circuit) (DC-Coupled Bias Circuit)

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RECOMMENDED
ASSEMBLY DIAGRAM

DC-Blocked Bias Circuit

Product Data Sheet

TGA8226-SCC

RF connections: Bond using 1-mil diameter, 15-mil-length gold bond wires at both RF Input and RF Output
for optimum RF performance.

Close placement of external components is essential to stability.

Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products.

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RECOMMENDED
ASSEMBLY DIAGRAM

DC-Coupled Circuit

Product Data Sheet

TGA8226-SCC

RF connections: Bond using 1-mil diameter, 15-mil-length gold bond wires at both RF Input and RF Output
for optimum RF performance.

Close placement of external components is essential to stability.

Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.

TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Web: www.triquint.com

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Product Data Sheet

TGA8226-SCC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.

TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Web: www.triquint.com

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