Datasheet TGA8161-SCC Datasheet (TriQuint Semiconductor)

Product Data Sheet

Gain Block Amplifier TGA8161-SCC

Key Features and Performance

• 500 MHz to 3 GHz Frequency Range

• 19 dB Gain with 3.5 dB Noise Figure

• 1.5:1 input/Output SWR

• Operates from Single 12 V Supply

• Greater than 10 dB Flat Gain Control
Range

• Unconditionally Stable

• 1.060 x 0.9398 x 0.1524 mm (0.040 x

0.037 x 0.006 in.)

Description

The TriQuint TGA8161-SCC is a monolithic 3-stage general purpose 500 MHz to 3
GHz amplifier designed as a complementary product to the TGA8061-SCC, 0.1 to 3.5
GHz amplifier.

The TGA8161-SCC is a self-biased amplifier with gain control capability, reduced
power consumption, and 3 dB bandwidth performance over the 100 MHz to 4 GHz
band. Typical output power at 1 dB gain compression is 12 dBm. The TGA8161-SCC
is ideal for receiver applications and may be used in gain control or switching
applications.

The TGA8161-SCC is supplied in chip form, with backside metallization, for ease of
assembly.

TriQuint Semiconductor Texas : [phone] Fax: [phone] Web: www.triquint.com

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Product Data Sheet

TGA8161-SCC

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Product Data Sheet

TGA8161-SCC

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Product Data Sheet

TGA8161-SCC

TYPICAL S-PARAMETERS

Frequency

(G Hz ) MAG ANG ( °) MAG ANG (°) MAG ANG ( °) MAG ANG (°) (d B)

S

11

S

21

S

12

S

22

0.1 0.48 - 92 5.50 44 0.0120 - 75 0.14 - 6 14.8

0.2 0.19 - 97 7.68 24 0.0044 - 90 0.12 - 29 17.7

0.3 0.17 - 116 8.56 12 0.0024 - 93 0.10 - 34 18.6

0.4 0.13 - 126 8.96 3 0.0014 - 87 0.09 - 35 19.0

0.5 0.11 - 142 9.18 - 4 0.0007 - 94 0.09 - 33 19.3

0.6 0.09 - 152 9.32 - 10 0.0002 - 58 0.08 - 35 19.4

0.7 0.09 - 158 9.40 - 15 0.0002 89 0.08 - 37 19.5

0.8 0.08 - 173 9.46 - 21 0.0007 84 0.08 - 40 19.5

0.9 0.08 - 178 9.50 - 26 0.0010 75 0.08 - 43 19.6

1.0 0.07 170 9.53 - 30 0.0012 84 0.08 - 46 19.6

1.1 0.08 160 9.54 - 35 0.0016 81 0.08 - 50 19.6

1.2 0.07 151 9.55 - 39 0.0018 81 0.07 - 53 19.6

1.3 0.07 146 9.56 - 44 0.0022 82 0.07 - 55 19.6

1.4 0.07 135 9.54 - 48 0.0024 85 0.07 - 60 19.6

1.5 0.07 128 9.53 - 53 0.0027 83 0.07 - 63 19.6

1.6 0.07 121 9.51 - 57 0.0028 82 0.07 - 67 19.6

1.7 0.07 111 9.50 - 61 0.0031 83 0.07 - 71 19.6

1.8 0.08 105 9.47 - 66 0.0033 81 0.07 - 76 19.5

1.9 0.08 99 9.43 - 70 0.0036 81 0.07 - 80 19.5

2.0 0.08 90 9.40 - 74 0.0037 80 0.07 - 85 19.5

2.1 0.08 84 9.31 - 79 0.0040 79 0.07 - 89 19.4

2.2 0.09 78 9.28 - 83 0.0042 78 0.07 - 94 19.4

2.3 0.09 71 9.22 - 87 0.0045 78 0.07 - 98 19.3

2.4 0.09 65 9.15 - 92 0.0047 78 0.07 - 104 19.2

2.5 0.09 60 9.07 - 96 0.0048 78 0.07 - 109 19.1

2.6 0.10 53 8.97 - 100 0.0050 77 0.08 - 114 19.1

2.7 0.10 47 8.86 - 105 0.0052 76 0.08 - 118 18.9

2.8 0.10 43 8.77 - 109 0.0055 76 0.08 - 123 18.9

2.9 0.10 35 8.64 - 113 0.0057 74 0.08 - 127 18.7

3.0 0.11 29 8.52 - 117 0.0058 73 0.08 - 131 18.6

3.1 0.11 23 8.41 - 122 0.0059 74 0.08 - 135 18.5

3.2 0.11 17 8.27 - 126 0.0061 74 0.08 - 139 18.3

3.3 0.11 11 8.14 - 130 0.0062 72 0.08 - 143 18.2

3.4 0.12 6 7.99 - 135 0.0063 73 0.09 - 148 18.1

3.5 0.12 0 7.82 - 139 0.0064 72 0.09 - 152 17.9

3.6 0.12 - 6 7.66 - 143 0.0065 72 0.09 - 155 17.7

3.7 0.12 - 12 7.51 - 147 0.0066 69 0.09 - 158 17.5

3.8 0.13 - 18 7.35 - 151 0.0066 72 0.09 - 162 17.3

3.9 0.13 - 23 7.18 - 155 0.0069 70 0.09 - 165 17.1

4.0 0.13 - 28 7.02 - 159 0.0070 72 0.10 - 169 16.9

GAIN

+

= 12 V, V

V

= 0 V, TA = 25O C

CTRL

Reference planes for S-parameter data include bond wires as specified in the “Recommended
Assembly Diagram”. The S-parameters are also available on floppy disk and the world wide web.

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Product Data Sheet

n

TGA8161-SCC

RF CHARACTERISTICS

DC CHARACTERISTICS

PARAMETER TEST CONDITIONS TYP UNIT

G

p

Small–signal power gain f = 0.5 to 3 GHz 19 dB

G

p

∆

P

Gain flatness f = 0.5 to 3 GHz ± 0.5 dB

= - 55°C to 90°C

T

BP

Gain temperature coefficient

1dB

Output power at 1–dB gain compressio

f = 0.5 to 3 GHz 12 dBm

-0.01 dB/°C

NF Noise figure f = 0.5 to 3 GHz 3.5 dB

0.5 GHz 21

IP

3

Output third–order intercept point 1.5 GHz 21 dBm

3 GHz 20.5

+

= 12 V, V

V

= 0 V, TA = 25o C

CTRL

PARAMETER TEST CONDITIONS TYP UNIT

+

I

for I

V

ds

highest.

I

DSS

+

V

= 12 V, V

is the drain voltage between .5V and 3.5 V at which drain current is

dss

= 0 V, TA = 25oC

CTRL

V

= .5 V to 3.5 V, V

DS

= 0 V 81.2 mA

GS

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Product Data Sheet

TGA8161-SCC

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Product Data Sheet

TGA8161-SCC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handling, assembly and test.

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