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Product Data Sheet
.1 - 3.5 GHz Low Noise Amplifier TGA8061-SCC
Key Features and Performance
• 100 MHz to 3.5 GHz Frequency Range
• 3 dB Bandwidth Exceeds 5 Octaves
• 2.4 dB Noise Figure with Low Input and
Output SWR
• 18 dB Gain
• 15 dBm Output Power at 1 dB Gain
Compression
• Operates from Single 12V Supply
• 1.524 x 1.524 x 0.102 mm (0.060 x 0.060
x 0.004 in.)
Description
The TriQuint TGA8061-SCC is a GaAs monolithic low noise amplifier intended for
use as a universal gain block in applications requiring simultaneous flat gain, low
noise figure, and low SWR over a very wide bandwidth. Three FET stages with
resistive feedback maintain highly repeatable linear phase and amplitude
characteristics.
The high isolation, low SWR, and unconditional stability of the TGA8061-SCC make
it ideal for following or driving mixers and filters. Small size and low external parts
count simplify system design and integration into higher-level assemblies.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as thermocompression and thermosonic wire
bonding processes. Ground is provided to the circuit through vias to the backside
metallization.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
TGA8061-SCC
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
A
…
M
TGA8061-SCC
ABSOLUTE
MAXIMUM RATINGS
Positive supply voltage, V+……………………………………………………………………………16 V
Bias control voltage range, V
Positive supply current, I+…..………………………………………………………………………
Pow er dissipation, P
, at (or below) 25oC base-plate temperature *………………………………4.3 W
D
Operating Channel temperature, T
Mounting temperature (30 s ec .), T
Storage temperature range, T
………………………………………………………………………0 V to 15 V
DJ
200 mA
**………………………………………………………………150oC
CH
……………………………………………………………………320oC
………………………………………………………………………-65 to 150oC
STG
Ratings over operating channel temperature range, TCH (unless otherw ise noted).
Stresses beyond those listed under "Absolute Maximum Ratings" may c aus e permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions
for extended periods may affect device reliability.
* For operation above 25
o
C base-plate temperature, derate linearly at the rate of 9.1 mW/oC.
** Operating channel temperature directly aff ec ts the dev ice MTTF. For maximum life, it is recommended that
channel temperature be maintained at the low est possible level. These ratings apply to each individual FET.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
TGA8061-SCC
TYPICAL S-PARAMETERS
Freque ncy
(GHz) MAG
S
11
ANG(
o
)
MAG
S
21
ANG(o)
MAG
S
12
ANG(o)
MAG
S
22
ANG(o)
0.1 0.40 -46 7.93 0 0.0001 49 0.29 -3 18.0
0.2 0.26 -44 8.29 -1 0.0010 77 0.29 -4 18.4
0.3 0.22 -40 8.39 -7 0.0011 74 0.29 -5 18.5
0.4 0.21 -36 8.42 -12 0.0019 54 0.29 -7 18.5
0.5 0.21 -37 8.45 -16 0.0024 0 0.29 -8 18.5
0.6 0.21 -41 8.47 -20 0.0012 -54 0.30 -10 18.6
0.7 0.19 -41 8.47 -25 0.0003 -14 0.30 -11 18.6
0.8 0.19 -41 8.46 -29 0.0000 64 0.30 -13 18.5
0.9 0.19 -42 8.47 -33 0.0006 107 0.30 -14 18.6
1.0 0.18 -42 8.46 -37 0.0010 107 0.30 -15 18.6
1.1 0.18 -43 8.48 -41 0.0010 98 0.30 -16 18.6
1.2 0.17 -44 8.47 -45 0.0012 111 0.30 -17 18.6
1.3 0.17 -45 8.46 -49 0.0014 101 0.29 -19 18.5
1.4 0.16 -46 8.45 -53 0.0018 105 0.29 -20 18.5
1.5 0.16 -47 8.39 -58 0.0019 102 0.29 -22 18.5
1.6 0.16 -49 8.31 -62 0.0020 108 0.29 -24 18.4
1.7 0.16 -52 8.23 -66 0.0020 105 0.28 -26 18.3
1.8 0.16 -58 8.20 -69 0.0020 104 0.28 -28 18.3
1.9 0.16 -65 8.20 -73 0.0020 108 0.28 -31 18.3
2.0 0.17 -71 8.22 -77 0.0022 108 0.28 -34 18.3
2.1 0.18 -78 8.22 -81 0.0027 105 0.28 -37 18.3
2.2 0.18 -83 8.20 -86 0.0030 107 0.28 -41 18.3
2.3 0.19 -88 8.15 -90 0.0029 106 0.28 -45 18.2
2.4 0.21 -91 8.09 -95 0.0031 107 0.29 -48 18.2
2.5 0.22 -94 8.01 -99 0.0032 107 0.30 -51 18.1
2.6 0.23 -96 7.92 -104 0.0034 111 0.30 -55 18.0
2.7 0.25 -97 7.81 -108 0.0033 109 0.32 -58 17.9
2.8 0.26 -97 7.70 -12 0.0038 105 0.32 -60 17.7
2.9 0.27 -97 7.56 -17 0.0040 107 0.34 -62 17.6
3.0 0.28 -97 7.44 -121 0.0041 104 0.35 -64 17.4
3.1 0.29 -95 7.29 -125 0.0041 107 0.36 -65 17.3
3.2 0.30 -94 7.16 -129 0.0044 109 0.37 -66 17.1
3.3 0.31 -93 7.03 -133 0.0044 107 0.38 -67 16.9
3.4 0.32 -91 6.88 -137 0.0050 106 0.39 -67 16.8
3.5 0.32 -90 6.74 -141 0.0048 109 0.39 -67 16.6
GAIN
(dB )
V+ = 12 V, VO = 5 V, TA = 25oC
The reference plane for S-parameter data is located at the center of device bond pads.
The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
TGA8061-SCC
RF CHARACTERISTICS
DC CHARACTERISTICS
EQUIVALENT
SCHEMATIC
P ARAMETER TEST C ONDITIONS TYP UNIT
1.0 GHz 26
I
Third–order interce pt 2.0 GHz 25 dBm
P 3
3.5 GHz 22
0.1 GHz 15
1.0 GHz 16
P
1–dB ga in compress ion 2.0 GHz 16 dBm
1dB
3.0 GHz 14
4.0 GHz 12
= 5 V, TA = 25oC
O
+
V
= 12 V, V
= 25oC
T
A
= 5 V , T
O
= 25oC
A
+
I
P ARAMETER TEST C ONDITIONS TYP UNIT
Positive s upply c urrent
V+ = 12 V, V
112 mA
TYPICAL BIAS
NETWORK
Select V
to set VO = 5 V+/- 0.5 V. Select resistor R1-R4 to set VD1 = 4.5 V +/- 0.5 V.
ADJ
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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RECOMMENDED
ASSEMBLY DIAGRAM
Product Data Sheet
TGA8061-SCC
RECOMMENDED
TEST
CONFIGURATION
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Close placement of external components is essential to stability.
V
connections: bond using three 1-mil diameter, 15 to 30-mil-length gold wires for optimum RF performance.
S1
The 100 pF capacitor should be placed within 15-mils of the chip, and source wires to this chip should be kept
as short as possible.
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MECHANICAL DRAWING
Product Data Sheet
TGA8061-SCC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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