Datasheet TGA8035-SCC Datasheet (TriQuint Semiconductor)

T R I Q U I N T S E M I C O N D U C T O R , I N C .

TGA8035-SCC Gain Block Amplifier

8035

6 to 18-GHz Frequency Range

●

13-dB Typical Gain

●

2.2:1 Typical Input/Output SWR

●

12.5-dBm Typical Output Power at 1 -dB Gain Compression

●

5-dB Typical Noise Figure

●

2,4892 x 2,0574 x 0,1143 mm (0.098 x 0.081 x 0.0045 in.)

●

PHOTO ENLARGEMENT

DESCRIPTION

The TriQuint TGA8035 - SCC is a two - stage GaAs monolithic amplifier designed for use as
a broadband general-purpose gain block. T wo 300 - µm gate - width FETs provide a 13- dB typical gain and
a 5- dB noise figure from 6 to 18- GHz. Typical output power at 1- dB gain compression is 12.5 - dBm.
Shunt feedback is used around each active device to improve gain flatness and standing- wave ratio
(SWR). Ground is provided to the circuitry through vias to the backside metallization.

The TGA8035-SCC amplifier is suitable for a variety of broadband electronic warfare (EW) applications.
The combination of gain, power, and noise figure makes this device an exceptional post amplifier
following a low-noise amplifier.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment
methods as well as thermocompression and thermosonic wire- bonding processes. The TGA8035 - SCC
is supplied in chip form and is readily assembled using automated equipment.

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

• www.triquint.com

)

TGA8035-SCC

TYPICAL
SMALL-SIGNAL
POWER GAIN

TYPICAL
NOISE FIGURE

20
18

16

14

12

10

8

Gain (dB)

6

4

2

0

6 7 8 9 10 11 12 13 14 15 16 17 18

Frequency (GHz)

8

7

6

5

4

VD1, VD2= 5 V

V D1, V D2= 5 V

= 50% I

I

D1

= 50% I

I

D1

ID2= 50% I

I D2= 50% I

TA= 25°C

T A= 25° C

VD1, VD2= 5 V

V D1, V D2= 5 V

= 50% I

I

= 50% I

I

D1

D1

ID2= 50% I

I D2= 50% I
T A= 25° C

TA= 25°C

DSS1

DSS2

DSS1

DSS2

DSS1

DSS1

DSS2

DSS2

TYPICAL
OUTPUT POWER

P

1dB

3

Noise Figure (dB)

2

1

0

6 7 8 9 10 11 12 13 14 15 16 17 18

Frequency (GHz)

20

18

16

14

12

10

8

6

Output Power (dBm)

4

2

0

6 7 8 9 10 11 12 13 14 15 16 17 18

Frequency (GHz

V D1, V D2= 5 V

VD1, VD2= 5 V

= 50% I

I

D1

= 50% I

I

D1

I D2= 50% I

ID2= 50% I

T A= 25° C

TA= 25°C

DSS1

DSS1

DSS2

DSS2

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TGA8035-SCC

TYPICAL
RETURN LOSS

ABSOLUTE
MAXIMUM RATINGS

0

2

VD1, VD2= 5 V

V D1, V D2= 5 V

= 50% I

I

D1

= 50% I

I

D1

ID2= 50% I

I D1= 50% I

TA= 25°C

T A= 25° C

DSS

DSS

DSS1

DSS2

4

6

8

10

Return Loss (dB)

12

14

Input

Input

Output

Output

6 7 8 9 10 11 12 13 14 15 16 17 18

Frequency (GHz)

Drain supply voltage, VD1, V
Drain supply voltage range with respect to negative supply voltage, VD1­Negative supply voltage range, V
Positive supply current, I
Positive supply current, I

................................................................................................................ 8 V

D2

VG1, VD2-

, V

...................................................................................... 0 V to -5 V

G1

G2

.................................................................................................................. I

D1

.................................................................................................................. I

D2

VG2.................... 0 V to 8 V

DSS1

DSS2

Power dissipation at (or below) 25 C base-plate temperature, PD* ...................................................... 1.4 W

Input continuous wave power, PIN.................................................................................................... 20 dBm

Operating channel temperature, TCH** .............................................................................................. 150  C

Mounting temperature (30 sec), TM .................................................................................................... 320 C

Storage temperature range, T

Ratings over operating channel temperature range, TCH(unless otherwise noted)

............................................................................................-65 to 150 C

STG

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under “RF Characteristics” is not implied. Exposure to absolute maximum rated conditions for
extended periods may affect device reliability.

* For operation above 25 C base - plate temperature, derate linearly at the rate of 3 mW/ C.
* Operating channel temperatur e (TCH) directly affects the device MTTF. For maximum life, it is recommended

that channel temperature be maintained at the lowest possible level.

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

• www.triquint.com

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TGA8035-SCC

TYPICAL S-PARAMETERS

Frequency S

(GHz) MAG ANG(° )SMAG ANG(° ) MAG ANG(° ) MAG ANG(° ) (dB)

11

S

21

S

12 22

5.0 0.54 75 2.34 55 0.013 109 0.59 73 7.4

5.5 0.35 71 3.49 9 0.018 77 0.47 61 10.9

6.0 0.31 75 4.33 -34 0.021 46 0.39 49 12.7

6.5 0.31 62 4.89 -73 0.022 15 0.33 33 13.8

7.0 0.28 34 5.16 -108 0.022 -15 0.28 14 14.2

7.5 0.24 -7 5.28 -141 0.021 -44 0.25 -7 14.5

8.0 0.25 -53 5.27 -172 0.021 -75 0.24 -31 14.4

8.5 0.30 -91 5.05 161 0.020 -102 0.26 -52 14.1

9.0 0.37 -117 4.92 136 0.019 -124 0.30 - 71 13.8

9.5 0.42 -138 4.82 112 0.021 -144 0.34 - 88 13.7

10.0 0.46 -154 4.71 90 0.021 -164 0.38 -102 13.5

10.5 0.48 -168 4.68 69 0.020 177 0.42 -115 13.4

11.0 0.48 178 4.73 48 0.020 174 0.43 -125 13.5

11.5 0.46 166 4.91 27 0.021 161 0.45 -134 13.8

12.0 0.43 153 5.13 5 0.021 151 0.46 -144 14.2

12.5 0.38 140 5.28 -18 0.021 141 0.45 -154 14.5

13.0 0.33 129 5.42 -41 0.021 132 0.43 -164 14.7

13.5 0.27 123 5.52 -64 0.021 120 0.41 -173 14.8

14.0 0.25 118 5.68 -89 0.020 109 0.39 178 15.1

14.5 0.24 112 5.61 -113 0.017 97 0.38 167 15.0

15.0 0.24 100 5.59 -138 0.013 96 0.35 154 14.9

15.5 0.22 89 5.40 -163 0.014 94 0.32 143 14.6

16.0 0.21 81 5.10 174 0.015 80 0.31 136 14.1

16.5 0.24 67 5.05 153 0.012 47 0.33 123 14.1

17.0 0.24 46 5.12 129 0.007 44 0.32 114 14.2

17.5 0.23 27 5.06 103 0.010 28 0.34 108 14.1

18.0 0.28 - 4 5.27 78 0.005 -38 0.35 93 14.4

18.5 0.35 -48 5.49 46 0.007 -17 0.33 83 14.8

19.0 0.41 -92 4.91 9 0.012 -85 0.29 73 13.8

19.5 0.53

20.0

0.68 -149

-122

ID1= 50% I

4.01

3.37

DSS1

-23

-55

, ID2= 50% I

DSS2

0.012

0.008

, V

, VD2= 5 V, TA= 25°C

D1

-152
156

0.19

0.18

75

100

Reference planes for S-parameter data include bond wires as specified in the “Recommended Assembly
Diagram.”

GAIN

12.1

10.5

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TGA8035-SCC

RF CHARACTERISTICS

DC CHARACTERISTICS

THERMAL INFORMATION

PARAMETER TEST CONDITIONS TY P UNIT

G

P

Small–signal power gain f = 6 to 18 G H z 13 dB
SWR(in) Input standing–wave ratio f = 6 to 18 GHz 2.2:1 —
SWR(out) Output standing–wave ratio f = 6 to 18 GHz 2.2:1 —
P

1dB

Output power at 1–dB gain compression f = 6 to 18 GHz 12.5 dB m
NF Noise figure f = 6 to 18 GHz 5 dB

V

D1,VD2

= 5 V, V

= - 1 V, VG2= - 1 V, TA= 25°C

G1

PARAMETER TEST CONDITIONS MIN MA X UNIT

I

Total zero–gate–voltage drain current at saturation V DS = 0.5 V to 3.5 V, 36 108 mA

DSS1

for FET1 * VGS = 0

I

Total zero–gate–voltage drain current at saturation V DS = 0.5 V to 3.5 V, 36 108 mA

DSS2

for FET2 ** V GS = 0

TA= 25°C

* V
** V

DS1

for I

DS2

is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.

DSS1

for I

is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.

DSS2

PARAMETER TEST CONDITIONS TEST CONDITIONS FET MMIC* UNIT

25°C Base, 80°C Channel** 152.5 76.3

R JCThermal resistance, I D=72 mA, V D=5V 85°C Base, 151°C Channel** 184.7 92.4 °C/W

channel–to–backside 100°C Base, 169°C Channel** 192.8 96.4

EQUIVALENT
SCHEMATIC

* MMIC thermal resistance is the peak FET temperature rise divided by the total MMIC dissipated power (.72 W).
**Hottest Gate Channel (Center of either FET).

RF Output

V

D2

RF Input

FET 2

FET 1

300 m

V

G1

V

D1

V

G2

300 m

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TYPICAL BIAS NETWORK

TGA8035-SCC

RECOMMENDED
ASSEMBLY DIAGRAM

RF Input

VG1,V

1

TGA8035

5

6

G2

R

Bypass

C

Bypass

2

3

4

VD1,V

D2

C

Bypass

RF Output

RF OutputRF Input

V

G1,VG2

RF connections: bond using two 1-mil diameter, 20 to 25 - mil- length gold bond wires at both RF Input and
RF Output for optimum RF performance.

Close placement of external components is essential to stability.

TriQuint Semiconductor, Inc. • Texas Facilities • [phone]

0.01 F

25

0.01 F

• www.triquint.com

VD1,V

D2

6

TGA8035-SCC

MECHANICAL DRAWING

1,4656

(0.0577)

0,2108

(0.0083)

0,1803

(0.0071)

1

65 43

0

0

0,4039

(0.0159)

0,9246

(0.0364)

1,8034

(0.0710)

2,3114

(0.0910)

2

2,1590

(0.0850)

2,0574
(0.081)

1,4681

(0.0578)

0,2108

(0.0083)

2,4892

(0.0980)

Units: millimeters (inches)
Thickness: 0,1143 (0.045) (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad.
Chip size tolerance: ± 0,0508 (0.002)

Bond pad #1 (RF Input): 0,0940 x 0,2362 (0.0037 x 0.0093)
Bond pad #2 (RF Output): 0,0991 x 0,2413 (0.0039 x 0.0095)
Bond pad #3 (VD2): 0,2286 x 0,1143 (0.0090 x 0.0045)

Bond pad #4 (V
Bond pad #5 (V
Bond pad #6 (V

): 0,2286 x 0,1143 (0.0090 x 0.0045)

G2

): 0,2286 x 0,1143 (0.0090 x 0.0045)

D1

): 0,2286 x 0,1143 (0.0090 x 0.0045)

G1

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• www.triquint.com

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