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Product Data Sheet
2 - 18 GHz Gain Block Amplifier TGA6345-EEU
Key Features and Performance
• 2 to 18 GHz Frequency Range
• 23 dB Typical Gain
• 1.6:1 Typical Input / Output SWR
• 22 dBm Typical Output Power at 1 dB
Gain Compression
• 6 dB Typical Noise Figure
• 4.140 x 3.175 x 0.102 mm (0.163 x 0.125
x 0.004 in.)
Description
The TriQuint TGA6345-EEU is a monolithic amplifier which operates over the 2 to
18 GHz Frequency range. This device consist of three cascaded distributed
amplifier sections. Typical small signal gain is 23 dB, which is adjustable by
using the control voltage, VCTRL. The TGA6345-EEU provides 22 dBm typical output
power at 1 dB gain compression.
The TGA6345-EEU is suitable for a variety of applications such as phased array
radar's and wide-band electronic warfare systems including jammers and
expendable decoys, and electronic counter measures. Bond pad and backside
metallization is gold plated for compatibility with eutectic alloy attachment methods
as well as the thermosonic wire bonding processes. Ground is provided to the
circuitry through vias to the backside metallization.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
TGA6345-EEU
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
2
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Product Data Sheet
TGA6345-EEU
TYPICAL S-PARAMETERS
Freque ncy
(GHz) MAG
S
11
ANG(
S
MAG
21
ANG(o)
o
)
MAG
S
12
ANG(o)
MAG
S
22
ANG(o)
0.5 0.71 -45 0.39 75 0.000 -177 0.94 -74 -8.2
1.0 0.50 -67 8.52 -34 0.000 129 0.40 -137 18.6
2.0 0.35 -97 21.40 131 0.001 117 0.19 102 26.6
3.0 0.31 -131 14.81 18 0.001 106 0.14 149 23.4
4.0 0.27 -171 15.56 -72 0.001 96 0.08 143 23.8
5.0 0.21 147 15.66 -159 0.001 89 0.07 154 23.9
6.0 0.12 104 15.44 116 0.001 96 0.07 173 23.8
7.0 0.01 -11 14.74 34 0.001 120 0.11 -176 23.4
8.0 0.13 -156 13.81 -46 0.002 130 0.18 174 22.8
9.0 0.22 162 13.19 -123 0.001 121 0.22 154 22.4
10.0 0.25 115 13.11 162 0.001 123 0.21 132 22.4
11.0 0.24 66 14.26 85 0.001 168 0.17 126 23.1
12.0 0.22 12 15.70 2 0.002 -160 0.16 135 23.9
13.0 0.14 -44 16.07 -83 0.002 -169 0.23 135 24.1
14.0 0.07 -94 16.07 -170 0.002 -174 0.24 116 24.1
15.0 0.02 -46 16.00 103 0.003 -177 0.19 115 24.1
16.0 0.13 -12 16.30 8 0.001 -166 0.21 113 24.2
17.0 0.18 -61 14.18 -86 0.003 164 0.27 106 23.0
18.0 0.20 -116 12.09 -172 0.002 169 0.29 91 21.7
19.0 0.16 -160 13.16 92 0.003 3 0.37 39 22.4
20.0 0.20 -174 12.08 -6 0.005 -76 0.18 -51 21.6
GAIN
(dB )
Reference planes for S-parameter data include bond wires as specified in the “Recommended Bias Network”.
The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
TGA6345-EEU
RF CHARACTERISTICS
P ARAMETER TEST C ONDITIONS TYP UNITS
G
Small–signal pow er gain f = 2 to 18 GHz 23 dB
P
SWR
SWR
Input standing w ave ratio f = 2 to 18 GHz 1.6:1 –
(in )
Output s tanding w a ve ratio f = 2 to 18 GHz 1.6:1 –
(out)
NF Nois e Figure f = 2 to 10 GHz 5.5 dB
f = 10 to 18 GHz 7.5
P
1dB
Output power at 1–dB gain compres s ion f = 2 to 18 GHz 22 dBm
f = 2 GHz 31.0
f = 6 GHz 33.0
IP
Output third–order inte rcept point f = 9 GHz 32.5 dBm
3
f = 12 GHz 31.5
f = 18 GHz 32.5
fo = 2 GHz 37.0
Output s ec ond–orde r interce pt point fo = 4 GHz 40.0 dBm
fo = 6 GHz 40.5
fo = 9 GHz 46.5
fo = 2 GHz -23.0
Output second harmonic at 1–dB gain compres s ion fo = 4 GHz -26.5 dBc
fo = 6 GHz -23.5
fo = 9 GHz -27.5
fo = 2 GHz -34.5
Output third harmonic at 1–dB gain compression fo = 4 GHz -25.0 dBc
fo = 6 GHz -23.5
Output fourth harmonic at 1–dB gain compression fo = 2 GHz -58 dBc
fo = 4 GHz -47
DC CHARACTERISTICS
V
DS
V+ = 7 V, V
= 0 V, I+ = 50% I
CNTL
, TA = 25oC
DSS
P ARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
Total zero–gate–voltage V
DS S
drain current at saturation
for I
is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe
DSS
= 0, V
V
V
T
A
GS
GS
GS
= 25oC
DS 1
= 0, V
DS 2
= 0, 0.5V to 3.5V
≤ 5.0 342 684 1026 mA
≤ 4.0
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
TGA6345-EEU
RF connections: Bond two 1-mil diameter, 25-mil-length gold bond wires at both RF Input and RF Output
for optimum RF performance.
Close placement of external components is essential to stability.
Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
TGA6345-EEU
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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