Datasheet TGA6316-EEU Datasheet (TriQuint Semiconductor)

Product Data Sheet

6 - 17 GHz Dual-Channel Power Amplifier TGA6316-EEU

Key Features and Performance

• 6 to 17 GHz Frequency Range

• Dual Channel Power Amplifier

• 20.5dB Typical Gain, Single Channel

• 1.5:1 Typical Input SWR, 2.1:1 Typical
Output SWR, Single Channel

• 29.5 dBm Output Power at 3 dB Gain
Compression, (31dBm combined)

• 6.5024 x 4.8006 x 0.1016 mm (0.256 x

0.189 x 0.004 in.)

Description

The TriQuint TGA6316-EEU is a dual channel GaAs monolithic amplifier which
operates from 6 to 17-GHz. Each channel features three-stage topology with a
1200-mm dual-gate FET distributed amplifier for the first stage, a 1200 µm single
gate FET second stage, and a 1900 µm single gate FET third stage. The dual­channel construction is designed for off-chip combining.

A single channel of the TGA6316-EEU provides 20.5-dB typical small signal gain
and 29.5 dBm output power at 3 dB gain compression. The TGA6316-EEU amplifier
is designed for use in wideband systems such as electronic warfare,
expendable decoys and test equipment.

Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as the thermocompression and thermosonic wire
bonding processes. Ground is provided to the circuitry through vias to the backside
metallization.

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Product Data Sheet

TGA6316-EEU

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Product Data Sheet

TGA6316-EEU

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Product Data Sheet

TGA6316-EEU

TYPICAL S-PARAMETERS

Frequency

(GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(°) (dB)

S

11

S

21

S

12

S

22

GAIN

6.0 0.34 -162 11.98 25 0.004 13 0.32 -13 21.6

6.4 0.33 179 15.41 -60 0.001 146 0.43 -57 23.8

6.8 0.29 162 13.82 -131 0.001 136 0.50 -92 22.8

7.2 0.24 150 12.11 170 0.001 127 0.53 -122 21.7

7.6 0.19 138 10.41 122 0.001 126 0.51 -147 20.3

8.0 0.14 126 9.49 77 0.001 135 0.47 -171 19.5

8.4 0.08 117 8.74 37 0.001 136 0.41 171 18.8

8.8 0.02 143 8.54 -2 0.001 126 0.36 156 18.6

9.2 0.07 -126 8.64 -38 0.001 139 0.33 143 18.7

9.6 0.16 -140 9.24 -77 0.001 119 0.33 130 19.3

10.0 0.23 -161 9.89 -116 0.002 124 0.33 114 19.9

10.4 0.28 178 10.93 -158 0.002 81 0.34 97 20.8

10.8 0.29 157 11.42 158 0.002 85 0.34 79 21.2

11.2 0.27 136 11.58 114 0.000 30 0.35 61 21.3

11.6 0.23 122 11.23 71 0.001 23 0.35 41 21.0

12.0 0.19 112 11.05 29 0.001 -75 0.36 21 20.9

12.4 0.16 110 10.76 -12 0.001 -142 0.35 1 20.6

12.8 0.15 108 10.82 -54 0.001 -147 0.34 -20 20.7

13.2 0.14 107 10.48 -97 0.000 124 0.31 -37 20.4

13.6 0.16 107 10.21 -141 0.002 147 0.29 -51 20.2

14.0 0.16 99 9.47 177 0.001 157 0.28 -63 19.5

14.4 0.19 94 8.89 133 0.000 -121 0.28 -78 19.0

14.8 0.21 81 8.09 92 0.001 171 0.27 -91 18.2

15.2 0.22 63 7.56 51 0.000 -105 0.27 -104 17.6

15.6 0.20 43 7.09 11 0.001 -120 0.26 -118 17.0

16.0 0.16 24 7.06 -28 0.002 -142 0.25 -131 17.0

16.4 0.08 13 7.41 -69 0.001 -142 0.24 -144 17.4

16.8 0.04 97 8.52 -115 0.001 -115 0.21 -160 18.6

17.2 0.15 109 9.45 -174 0.001 -174 0.15 -177 19.5

17.6 0.26 78 9.15 121 0.000 -30 0.06 -179 19.2

18.0 0.27 43 7.29 58 0.000 -57 0.11 -84 17.3

TA = 25oC, VD = 8 V, VG2 = 1.2 V, ID = 50% I

(single channel)

DSS

RF CHARACTERISTICS

G

P

Small–s ignal power ga in f =6 to 17 GHz 20.5 dB

P ARAMETER TEST CONDITIONS TYP UNITS

SWR(in) Input standing w ave ra tio f = 6 to 17 GHz 1.5:1 -

SWR(out) Output standing w ave ratio f = 6 to 17 GHz 2.1:1 -

P

1dB

P

2dB

P

3dB

Output pow e r at 1–dB ga in compres s ion f = 6 to 17 GHz 28.5

Output pow e r a t 2–dB gain c ompres s ion f = 6 to 17 GHz 29 dBm

Output pow e r at 3–dB ga in compres s ion f = 6 to 17 GHz 29.5

= 25oC, VD = 8 V, VG2 = 1.2 V, ID = 50% I

T

A

(single channel)

DSS

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Product Data Sheet

TGA6316-EEU

Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products.

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Product Data Sheet

TGA6316-EEU

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Product Data Sheet

TGA6316-EEU

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handling, assembly and test.

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Application Notes: Balanced Configuration Utilizing Lange Couplers

Product Data Sheet

TGA6316-EEU

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Application Notes:

Product Data Sheet

TGA6316-EEU

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Application Notes:

Product Data Sheet

TGA6316-EEU

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handling, assembly and test.

TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Web: www.triquint.com

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