Datasheet TGA1319C Datasheet (TriQuint Semiconductor)

Advance Product Information

August 29, 2000

Ka Band Wideband LNA/Driver TGA1319C

Key Features and Performance

• 0.15um pHEMT Technology

• 16-30 GHz Frequency Range

• 2.25 dB Nominal Noise Figure midband

• 21 dB Nominal Gain

• 14 dBm Pout

Chip Dimensions 2.169 mm x .904 mm

•5V, 60 mA

Primary Applications

• Point-to-Point Radio

• Point-to-Multipoint Communications

3

2.5

NF (dB)

2

1.5

21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26

Frequency

Typical NF @ 25C

25

20

15

10

Gain (dB)

5

0

10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Freque ncy ( GHz)

0

-5

-10

-15

-20

Input RL (dB)

-25

-30
10 11 12 13 14 15 1 6 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Freque ncy ( GHz)

Typical S11 @ 25C

0

-5

-10

-15

-20

Output RL (dB)

-25

-30
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Frequ ency ( GHz)

Typical Gain @ 25C

Typical S22 @ 25C

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

1

Advance Product Information

August 29, 2000

TGA1319C

RFin RFout

TGA1319C- Recommended Assembly Drawing

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Advance Product Information

Assembly Process Notes

Reflow process assembly notes:

•=

AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC

•=

alloy station or conveyor furnace with reducing atmosphere

•=

no fluxes should be utilized

•=

coefficient of thermal expansion matching is critical for long-term reliability

•=

storage in dry nitrogen atmosphere

Component placement and adhesive attachment assembly notes:

•=

vacuum pencils and/or vacuum collets preferred method of pick up

•=

avoidance of air bridges during placement

•=

force impact critical during auto placement

•=

organic attachment can be used in low-power applications

•=

curing should be done in a convection oven; proper exhaust is a safety concern

•=

microwave or radiant curing should not be used because of differential heating

•=

coefficient of thermal expansion matching is critical

August 29, 2000

TGA1319C

Interconnect process assembly notes:

•=

thermosonic ball bonding is the preferred interconnect technique

•=

force, time, and ultrasonics are critical parameters

•=

aluminum wire should not be used

•=

discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

•=

maximum stage temperature: 200ΓC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com