Datasheet TGA1319B Datasheet (TriQuint Semiconductor)

Advance Product Information

S22(

August 29, 2000

Ka Band Low Noise Amplifier TGA1319B

Key Features and Performance

• 0.15um pHEMT Technology

• 21-27 GHz Frequency Range

• 1.75 dB Nominal Noise Figure

• 19 dB Nominal Gain

• 8dBm Pout

• 3V, 45 mA Self -biased

Chip Dimensions 2.235 mm x 1.145 mm

Preliminary Data, 6-10 Fixtured samples @ 25C

6.0

5.0

4.0

3.0

2.0

1.0

0.0

15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0

two 1-mil ball bonds at RF interconnects

Frequency (GHz)

NF @ 25C

25

20

15

S21

(dB)

10

5

0

1 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38

Frequency (GHz)

Primary Applications

• Point-to-Point Radio

• Point-to-Multipoint Communications

5

0

-5

S11

-10

(dB)

-15

-20

-25
1 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38

0

-5

-10

-15

-20

dB)

-25

-30

-35

-40

-45

1 3 6 8 111316182123262831333638

Frequency (GHz)

S11 @ 25C

Frequency (GHz)

Gain @ 25C

S22 @ 25C

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

1

Vd=3V

Advance Product Information

August 29, 2000

TGA1319B

100
pF

100

100

pF

pF

Gnd

TGA1319B - Recommended Assembly Drawing

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Advance Product Information

Assembly Process Notes

Reflow process assembly notes:

•=

AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC

•=

alloy station or conveyor furnace with reducing atmosphere

•=

no fluxes should be utilized

•=

coefficient of thermal expansion matching is critical for long-term reliability

•=

storage in dry nitrogen atmosphere

Component placement and adhesive attachment assembly notes:

•=

vacuum pencils and/or vacuum collets preferred method of pick up

•=

avoidance of air bridges during placement

•=

force impact critical during auto placement

•=

organic attachment can be used in low-power applications

•=

curing should be done in a convection oven; proper exhaust is a safety concern

•=

microwave or radiant curing should not be used because of differential heating

•=

coefficient of thermal expansion matching is critical

August 29, 2000

TGA1319B

Interconnect process assembly notes:

•=

thermosonic ball bonding is the preferred interconnect technique

•=

force, time, and ultrasonics are critical parameters

•=

aluminum wire should not be used

•=

discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

•=

maximum stage temperature: 200ΓC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com