Datasheet TGA1319A Datasheet (TriQuint Semiconductor)

Advance Product Information

August 29, 2000

Ka Band Low Noise Amplifier TGA1319A

Key Features and Performance

• 0.15um pHEMT Technology

• 21-27 GHz Frequency Range

• 2 dB Nominal Noise Figure

• 19 dB Nominal Gain

• 12 dBm Pout

•3V, 45 mA

Chip Dimensions 1.985 mm x .980 mm

Primary Applications

• Point-to-Point Radio

Preliminary Data, 2 Fixtured samples @ 25C

• Point-to-Multipoint Communications

3

2.8

2.6

2.4

2.2

2

1.8

1.6

1.4

1.2

1

15 16 17 18 19 20 21 22 23 24 25 26 27

Typical NF @ 25C

30

28

26

24

22

20

18

16

14

12

10

15 16 17 18 19 20 21 22 23 24 25 26

0

-4

-8

-12

-16

-20

15 16 17 18 19 20 21 22 23 24 25 26

Typical S11 @ 25C

0

-5

-10

-15

-20

15 16 17 18 19 20 21 22 23 24 25 26

Typical Gain @ 25C

Typical S22 @ 25C

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

1

Vd=3V

Advance Product Information

August 29, 2000

TGA1319A

RFin

100
pF

100
pF

100
pF

RFout

100
pF

Vg1

TGA1319A - Recommended Assembly Drawing

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Vg2

Advance Product Information

Assembly Process Notes

Reflow process assembly notes:

•=

AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC

•=

alloy station or conveyor furnace with reducing atmosphere

•=

no fluxes should be utilized

•=

coefficient of thermal expansion matching is critical for long-term reliability

•=

storage in dry nitrogen atmosphere

Component placement and adhesive attachment assembly notes:

•=

vacuum pencils and/or vacuum collets preferred method of pick up

•=

avoidance of air bridges during placement

•=

force impact critical during auto placement

•=

organic attachment can be used in low-power applications

•=

curing should be done in a convection oven; proper exhaust is a safety concern

•=

microwave or radiant curing should not be used because of differential heating

•=

coefficient of thermal expansion matching is critical

August 29, 2000

TGA1319A

Interconnect process assembly notes:

•=

thermosonic ball bonding is the preferred interconnect technique

•=

force, time, and ultrasonics are critical parameters

•=

aluminum wire should not be used

•=

discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

•=

maximum stage temperature: 200ΓC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com