Datasheet TGA1307-EPU Datasheet (TriQuint Semiconductor)

Advance Product Information

EG1307 Fixtured Small Signal Data, Wafer 991880601

May 16, 2000

Ka Band Low Noise Amplifier TGA1307-EPU

Key Features and Performance

• 0.25um pHEMT Technology

• 23-29 GHz Frequency Range

• 3.1 dB Nominal Noise Figure 28GHz

• 17 dB Nominal Gain

• OTOI > 22dBm

• 5V, 50 mA Self-Bias

Chip Dimensions 2.54 mm x 1.15 mm

10

9

8

7

6

Typical NF @ 25C

5

4

3

R/C 35_35

2

R/C 50_50

R/C 59_59

1

R/C 70_70

R/C 75_75

0

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

25

Vd = 5V, Id1

Frequency (G Hz)

Vd = 5V, Id1

Primary Applications

• Point-to-Point Radio

• Point-to-Multipoint Communications

≈≈≈≈

45mA

≈≈≈≈

45mA

Typical Gain @ 25C

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

20

15

10

5

0

R/C 9_21

R/C 40_35

R/C 47_31

R/C 44_15

R/C 50_30

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Frequency (GHz)

1

Advance Product Information

May 16, 2000

TGA1307

EG1307 Fixtured Small Signal Data, Wafer 991880603

0

-2

-4

-6

-8

R/C 50_32

-10

-12

R/C 59_30

R/C 70_30

R/C 35_31

R/C 75_15

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

EG1307 Fixtured Small Signal Data, Wafer 991880603

25

20

15

R/C 50_32

10

R/C 59_30

R/C 70_30

R/C 35_31

R/C 75_15

5

0

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Vd = 5V, Id1

Vd = 5V, Id1

≈≈≈≈

45mA

Frequency (GHz)

≈≈≈≈

45mA

Frequency (GHz)

EG1307 Fixtured Small Signal Data, Wafer 991880603

0

-10

-20

-30

-40

-50

-60

-70

-80

R/C 50_32

R/C 59_30

R/C 70_30

R/C 35_31

R/C 75_15

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Vd = 5V, Id1

EG1307 Fixtured Small Signal Data, Wafer 991880603

0

-2

-4

-6

-8

R/C 50_32

-10

-12

R/C 59_30

R/C 70_30

R/C 35_31

R/C 75_15

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Frequency (GHz)

Vd = 5V, Id1

Frequency (GHz)

≈≈≈≈

45mA

≈≈≈≈

45mA

Typical Small Signal S-parameters at 25C.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Advance Product Information

May 16, 2000

TGA1307

EG1307 S11 Lot 9918806 wafer 2

0

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

-10

-20

-30

-40

-50

-60

-70

Temp: -60

Temp: -25

Temp: 0

Temp: 25

Temp: 50

Temp: 75

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

0

Temp: -60

Temp: -25

Temp: 0

Temp: 25

Temp: 50

Temp: 75

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

5V R/C 60 2 4

Frequency (G Hz)

EG1307 S12 Lot 9918806 wafer 2

5V R/C 60 2 4

Frequency (GHz)

EG1307 S21 Lot 9918806 wafer 2

25

20

15

Temp: -60

10

5

0

-2

-4

-6

-8

-10

-12

Temp: -25

Temp: 0

Temp: 25

Temp: 50

Temp: 75

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

0

Temp: -60

Temp: -25

Temp: 0

Temp: 25

Temp: 50

Temp: 75

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

5V R/C 60 2 4

Frequency (G Hz)

EG1307 S22 Lot 9918806 wafer 2

5V R/C 60 2 4

Frequency (GHz)

Small Signal S-parameters over temperature.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Advance Product Information

May 16, 2000

TGA1307

10

9

8

7

6

5

4

3

2

1

0

R/C 35_35

R/C 50_50

R/C 59_59

R/C 70_70

R/C 75_75

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Vd = 5V, Id1

Frequency (GHz)

≈≈≈≈

45mA

Typical Noise Figure - 5 devices

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Advance Product Information

May 16, 2000

TGA1307

TGA1307-EPU - Mechanical Drawing

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Advance Product Information

May 16, 2000

TGA1307

TGA1307-EPU - Recommended Assembly Drawing

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Advance Product Information

Assembly Process Notes

Reflow process assembly notes:

•=

AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC

•=

alloy station or conveyor furnace with reducing atmosphere

•=

no fluxes should be utilized

•=

coefficient of thermal expansion matching is critical for long-term reliability

•=

storage in dry nitrogen atmosphere

Component placement and adhesive attachment assembly notes:

•=

vacuum pencils and/or vacuum collets preferred method of pick up

•=

avoidance of air bridges during placement

•=

force impact critical during auto placement

•=

organic attachment can be used in low-power applications

•=

curing should be done in a convection oven; proper exhaust is a safety concern

•=

microwave or radiant curing should not be used because of differential heating

•=

coefficient of thermal expansion matching is critical

May 16, 2000

TGA1307

Interconnect process assembly notes:

•=

thermosonic ball bonding is the preferred interconnect technique

•=

force, time, and ultrasonics are critical parameters

•=

aluminum wire should not be used

•=

discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

•=

maximum stage temperature: 200ΓC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com