Datasheet TGA1172 Datasheet (TriQuint Semiconductor)

Advance Product Information

3

2

March 21, 2000

27 - 32 GHz 1W Power Amplifier TGA1172

Key Features

• 0.25 um pHEMT Technology

• 18 dB Gain at 28 GHz

• 29 dBm Nominal P1dB

• 37dBm OTOI typical at 28GHz

• Input/Output RL < -10 dB

• Bias 6 - 7V @ 630 mA

Chip Dimensions 2.69 mm x 1.37 mm

Small Signal Gain

15

10

6V, 630 mA

5

0

-5

-10

Return Loss (dB)

-15

-20

10 15 20 25 30 35 40

S11

S21

S2

Frequency (GHz)

Output Power at P1dB

32

31

30

29

28

P1dB (dBm)

27

26

25

26 27 28 29 30 31 32

6V, 630 mA

25

15

5

-5

-15

-25

-35

-45

Primary Applications

• Point-to-Point Radio

• Point-to-Multipoint Communications

• Ka Band Sat-Com

Vd1

RF

IN

Gain (dB)

600µm 1200µm 2400µm

Vg1

Vd1

Vd2

Vg2

Vg2

Vd2

Amplifier Topology

Output Third Order Intercept

40
39
38
37
36
35
34
33

Output TOI (dBm)

32
31
30

26 27 28 29 30 31 32 3

Vd3

Vg3

Vg3

Vd3

6V, 630 mA

RF

OUT

Frequency (GHz)

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Frequency (GHz)

1

Advance Product Information

TGA1172 Single tone pout and IMD3 vs Pin

Freque ncy = 28GHz, 6V, 630 mA

March 21, 2000

TGA1172

25

20

15

10

Pout (dBm)

SCL Power

5

0

-5 -4 -3 -2 -1 0 1 2 3 4 5

Pin (dBm)

IMD3

10

0

-10

-20

-30

-40

IMD3 (dBm)

TGA1172 Single tone pout and IMD3 vs Pin

Frequency = 31GHz, 6V, 630 mA

25

20

15

10

Pout (dBm)

SCL Power

5

0

-5 -4 -3 -2 -1 0 1 2 3 4 5

Pin (dBm)

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

IMD3

10

0

-10

-20

-30

-40

IMD3 (dBm)

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

2

Advance Product Information

March 21, 2000

TGA1172

Vd

5mil

Ribbon

100pF

0.01µF

0.01µF

100pF

5mil

Ribbon

Vg

Chip Assembly and Bonding Diagram

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

3

Advance Product Information

Assembly Process Notes

Reflow process assembly notes:

•=

AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC

•=

alloy station or conveyor furnace with reducing atmosphere

•=

no fluxes should be utilized

•=

coefficient of thermal expansion matching is critical for long-term reliability

•=

storage in dry nitrogen atmosphere

Component placement and adhesive attachment assembly notes:

•=

vacuum pencils and/or vacuum collets preferred method of pick up

•=

avoidance of air bridges during placement

•=

force impact critical during auto placement

•=

organic attachment can be used in low-power applications

•=

curing should be done in a convection oven; proper exhaust is a safety concern

•=

microwave or radiant curing should not be used because of differential heating

•=

coefficient of thermal expansion matching is critical

March 21, 2000

TGA1172

Interconnect process assembly notes:

•=

thermosonic ball bonding is the preferred interconnect technique

•=

force, time, and ultrasonics are critical parameters

•=

aluminum wire should not be used

•=

discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

•=

maximum stage temperature: 200ΓC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

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