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Advance Product Information
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Feb 4, 2000
33-36 GHz 2W Power Amplifier TGA1141
Key Features
• 0.25 um pHEMT Technology
• 17 dB Nominal Gain
• 31 dBm Pout @ P1dB,
• Psat 33dBm @ 6V , 34dBm @7V
• Bias 6 - 7V @ 1.5A
Primary Applications
• Military Radar Systems
Chip Dimensions 4.13 mm x 3.3 mm
22
20
18
16
14
Small-signal Gain (dB)
12
10
30 32 34 36 38 40
35
34
33
32
31
30
29
Pout (dBm)
28
27
26
25
32 33 34 35 36 37
Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA
uency (GHz
Fre
uency (GHz
Fr e
P1 dB _ a v e
Psat_av e
• Ka Band Sat-Com
• Point-to-Point Radio
Performance Summary Table
Description
Frequency range
Small signal gain
Input return loss
Output return loss
Output power
PAE
Operating temperature range
Ids
Vds
Die size
Performance Evaluation
Fixtured with Flare TFNs
33 to 36 GHz
> 17 dB nom, 34 - 35.2 GHz
> 17 dB nom, 33 - 36 GHz
~ 5 dB nom, 34 - 35.2 GHz
~ 5 dB nom. 33 – 36 GHz
> 8 dB nom, 34 - 35.2 GHz
> 7 dB nom, 33 - 36 GHz
32.3dBm min. 34 –35.2 GHz
31.5dBm min, 34 – 35.2 GHz
over temp.
> 20% +25C
Tested under –26, +25, &
+100C
Predict: -43C
< 1.5 A max over operating
frequency and Temp. range
+ 6 V
4.134 mm x 3.300 mm
13.6mm
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
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Advance Product Information
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Measured Average Small Signal Data
Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA
22
20
18
Feb 4, 2000
TGA1141
S21
S11,S22
16
14
Small-signal Gain (dB)
12
10
30 32 34 36 38 40
Fre
uency (GHz
Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA
0
-2
-4
-6
-8
S11
S22
-10
Input & Output Return Loss (dB)
-12
-14
30 32 34 36 38 40
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Frequency (GHz)
2
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Advance Product Information
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Feb 4, 2000
Pout
PAE
Measured Power Data
35
34
33
32
31
30
29
Pout (dBm)
28
27
26
25
32 33 34 35 36 37
30
28
26
24
22
20
PAE (%)
18
16
14
12
10
32 33 34 35 36 37
35
Fr e
uency (GHz
Freque ncy (GHz)
P1dB_ave
Ps at_ave
PAE@P1dB
PA E@ Ps at
TGA1141
34.5
34
Psat vs Vd
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
33.5
33
32.5
(dBm)
out
32
P
31.5
31
30.5
30
32 33 34 35 36 37
Freque ncy (GHz)
+6V
+7V
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Page 4
Advance Product Information
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Pout, Gain vs. Pin at -26C, +25C and +100C
w9918802-1 Dev 2505: 34.0GHz +6V
Feb 4, 2000
TGA1141
35
33
31
29
27
25
23
Pout (dBm)
21
19
17
15
0 5 10 15 20 25
20
19
18
17
16
15
14
13
12
11
10
Pout +25C
Pout +100C
Pout - 26C
Gai n +2 5 C
Gain (dB)
Gain +100C
Gain -26C
dBm
Pi n
Pout vs. Temperature Data Summary Matrix:
T= -26C T= +25C T= +100C
Freq (GHz) min Pout mean Pout min Pout mean Pout min Pout mean Pout
34 33 33 32.7 32.8 31.9 32
34.6 32.8 32.9 32.5 32.6 31.7 31.8
35.2 32.5 32.7 32.3 32.4 31.5 31.6
Ave. Pout (dBm) 32.8 32.9 32.5 32.6 31.7 31.8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
4
Page 5
Advance Product Information
Feb 4, 2000
TGA1141
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
Page 6
Advance Product Information
Assembly Process Notes
Reflow process assembly notes:
•=
AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
•=
alloy station or conveyor furnace with reducing atmosphere
•=
no fluxes should be utilized
•=
coefficient of thermal expansion matching is critical for long-term reliability
•=
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
•=
vacuum pencils and/or vacuum collets preferred method of pick up
•=
avoidance of air bridges during placement
•=
force impact critical during auto placement
•=
organic attachment can be used in low-power applications
•=
curing should be done in a convection oven; proper exhaust is a safety concern
•=
microwave or radiant curing should not be used because of differential heating
•=
coefficient of thermal expansion matching is critical
Feb 4, 2000
Interconnect process assembly notes:
•=
thermosonic ball bonding is the preferred interconnect technique
•=
force, time, and ultrasonics are critical parameters
•=
aluminum wire should not be used
•=
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
•=
maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
6
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