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Advance Product Information
27- 32 GHz 1.5 Watt Power Amplifier TGA1082B
Prototype Part #, Production Part # TBD
Key Features
• 0.25 um pHEMT Technology
• 22 dB Nominal Gain at 30GHz
• 1W Nominal Pout @ P1dB
• 1.5W Psat at 30GHz
• Bias 6 - 7V @ 960 mA
• Chip Dimensions 4.13mm x 3.3mm
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
The TriQuint TGA1082B-EPU is a three stage
HPA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process. The TGA1082B
is designed to support a variety of millimeter wave
applications including point-to-point digital radio
and LMDS/LMCS and Ka band satellite ground
terminals.
The TGA1082B provides 30 dBm nominal
output power at 1dB compression across
27-32GHz. Typical small signal gain is 22 dB
at 30GHz.
The TGA1082B requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance
compliance. The device is available in chip form.
• Ka Band Sat-Com
30
28
26
24
22
Gain (dB)
20
18
16
28 29 30 31 32
Frequency (GHz)
32
30
28
26
24
22
P1dB (dBm)
20
18
28 29 30 31 32
Frequency (GHz)
Note: Devices designat e d as EPU are typically earl y in their char a cterization process prior to finalizing all electric al and process
specifications. Sp ecifications are subje ct to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Page 2
Advance Product Information
Note: Devices designat e d as EPU are typically earl y in their char a cterization process prior to finalizing all electric al and process
specifications. Sp ecifications are subje ct to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2
Page 3
Advance Product Information
Figure 1 -- Recommended Bias
Layout
0.01uF 1000pF 68pF
RF In
Vg
Optional stability network (2 PL) iff
Airbridges are broken.
Contact TQT Applications for
additional information
0.01uF 68pF 0.01uF 68pF
5 Ohms
68pF
Vd
Vd
68 pF .01uF
RF Out
68 pF .01uF0.01uF 1000pF 68pF
Airbridges 2 pl
Figure 2 -- Optional Bias
Mode for Enhanced
Stability
Break Airbridges 2 pl
5 Ohms
68pF
Note: Devices designat e d as EPU are typically earl y in their char a cterization process prior to finalizing all electric al and process
specifications. Sp ecifications are subje ct to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Optional stability network (2 PL) iff
Airbridges are broken.
Contact TQT Applications for
additional information
3
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