Datasheet TGA1073C-SCC Datasheet (TriQuint Semiconductor)

Product Datasheet

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August 15, 2000

36 - 40 GHz Power Amplifier TGA1073C-SCC

Key Features and Performance

• 0.25um pHEMT Technology

• 36-40 GHz Frequency Range

• 26 dBm Nominal Pout @ P1dB, 38GHz

• 15 dB Nominal Gain

• Bias 5-7V @ 240 mA

• Chip Dimensions 2.4 mm x 1.45 mm

Primary Applications

• Point-to-Point Radio

The TriQuint TGA1073C-SCC is a two stage PA MMIC
design using TriQuint’s proven 0.25 µm Power pHEMT
process to support a variety of millimeter wave
applications including point-to-point digital radio and
point-to-multipoint systems.

The two-stage design consists of two 400 µm input
devices driving four 400 µm output devices.

The TGA1073C provides 24 dBm of output power at
1dB gain compression and 26 dBm saturated output
power across the 36-40 GHz with a typical small signal
gain of 15 dB.

The TGA1073C requires a minimum of off-chip
components. Each device is 100% DC and RF tested
on-wafer to ensure performance compliance. The
device is available in chip form.

Typical Performance, 36-40 GHz

Paramet e

Small Signal Gain dB 1

Gain Flatness dB

Output P1d

Saturated Output Power dBm 2

Saturated PA

Output OTOI dBm 3

IMR3 @ SCL = P1dB - 10dB dBc 3

ut Ret urn Loss dB -10

Output Ret urn Loss dB -8

Reverse Isolati on dB -35

Quiescent Current m

Unit +5V Supply+6V Supply+7V Suppl

1

dBm 2

22 2

• Point-to-Multipoint Radio

TGA1073C Typical RF Performance (Fixtured)

20

15

10

5

0

-5

-10

-15

Gain and Return Loss (dB)

-20

-25

33 34 35 36 37 38 39 40 41 42 43

33

30

27

24

21

18

15

12

9

6

Output Power @ P1dB (dBm)

3

36 37 38 39 40 41 42

S22

S11

Frequency (GHz)

TGA1073C Typical RF Performance (Fixtured)

P1dB

VD = +5V, +6V, +7V

IMR3 @ VD = +6V

Frequency (GHz)

S21

50

48

46

44

42

40

38

36

34

32

IMR3 @ SCL=P1dB-10dB (dBc)

30

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

1

MAXIMUM RATINGS

Product Datasheet

TGA1073C-SCC

SYMBOL PARAMETER 5/

+

V

+

I

P

IN

P

D

T

CH

T

M

POSITIVE SUPPLY VOLTAGE 8 V

POSITIVE SUPPLY CURRENT 480 mA 1/

INPUT CONTINUOUS WAVE POWER 23 dBm 4/

POWER DISSIPATION 3.84 W

OPERATING CHANNEL TEMPERATURE 150 0C2/ 3/

MOUNTING TEMPERATURE

VALUE NOTES

320 0C

(30 SECONDS)

T

STG

STORAGE TEMPERATURE -65 to 150 0C

1/ Total current for all stages.

2/ These ratings apply to each individual FET.

3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum

life, it is recommended that junction temperatures be maintained at the lowest possible levels.

4/ This value reflects an estimate. Actual value will be inserted as soon as it is determined.

5/ These ratings represent the maximum operable values for this device.

DC SPECIFICATIONS (100%)

= 25 °C + 5 °C)

(T

A

NOTES SYMBOL TEST CONDITIONS 2/ LIMITS UNITS

MAX

188

212

1.5

1.5

1.5

mA

mS

V

V

V

1/ |VP1|STD 0.5

1/ |VP2|STD 0.5

1/ |V

1/ |V

1/ |V

1/ VP, V

BVGD

I

G

BVGD1,2

BVGS1

, and V

MIN

DSS1

M1

|STD 0.5

P3-6

STD 40

STD 88

|STD 1130V

|STD 1130V

are negative.

BVGS

2/ The measurement conditions are subject to change at the manufacture’s discretion (with appropriate notification to

the buyer).

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

2

RF SPECIFICATIONS

= 25°C + 5°C)

(T

A

Product Datasheet

TGA1073C-SCC

NOTE TEST MEASUREMENT

CONDITIONS

6V @ 240mA

1/

1/ INPUT RETURN LOSS

SMALL-SIGNAL
GAIN MAGNITUDE

POWER OUTPUT
AT 1 dB GAIN
COMPRESSION

36 – 39 GHz

40 GHz

37 GHz

38.5 GHz

40 GHz

36 – 40 GHz -10 dB

MAGNITUDE

1/

OUTPUT RETURN LOSS

36 – 40 GHz -8 dB

MAGNITUDE

OUTPUT THIRD ORDER
INTERCEPT

1/ RF probe data is taken at 1 GHz steps.

VALUE UNITS

MIN TYP MAX

12

9

23

23

21

15

14

26

26

25

33 dBm

dB

dB

dBm

dBm

dBm

RELIABILITY DATA

PARAMETER BIAS CONDITIONS P

DISS

R

θ

JC

T

CH

VD (V) ID (mA) (W) (C/W) (°C) (HRS)

R

Thermal resistance

θ

JC

6 240 1.44 32.43 116.7 2.1 E7
(channel to backside of
c/p)

Note: Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20mil CuMo Carrier at 70°C
baseplate temperature. Worst case condition with no RF applied, 100% of DC power is
dissipated.

T

M

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3

Mechanical Characteristics

Product Datasheet

TGA1073C-SCC

67

5

21

4

83

Units: millimeters (inches)
Thickness: 0.1016 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.0508 (0.002)

Bond Pad #1 (RF Input) 0.100 x 0.130 (0.004 x .005)
Bond Pad #2 (RF Output) 0.100 x 0.130 (0.004 x .005)
Bond Pads #3, 4, 5 (VD) 0.100 x 0.100 (0.004 x .004)
Bond Pads #6, 7, 8 (VG) 0.100 x 0.100 (0.004 x .004)

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

4

1

µµµµ

F Cap on

Supply Line

V

Product Datasheet

TGA1073C-SCC

G

0.01

µµµµ

F

100pF

RF In

100pF

100pF100pF

0.01

µµµµ

F

Chip Assembly and Bonding Diagram

V

RF Out

1

µµµµ

F Cap on

Supply Line

D

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

5

Reflow process assembly notes:

•=

AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC

•=

alloy station or conveyor furnace with reducing atmosphere

•=

no fluxes should be utilized

•=

coefficient of thermal expansion matching is critical for long-term reliability

•=

storage in dry nitrogen atmosphere

Component placement and adhesive attachment assembly notes:

•=

vacuum pencils and/or vacuum collets preferred method of pick up

•=

avoidance of air bridges during placement

•=

force impact critical during auto placement

•=

organic attachment can be used in low-power applications

•=

curing should be done in a convection oven; proper exhaust is a safety concern

•=

microwave or radiant curing should not be used because of differential heating

•=

coefficient of thermal expansion matching is critical

Interconnect process assembly notes:

Product Datasheet

TGA1073C-SCC

•=

thermosonic ball bonding is the preferred interconnect technique

•=

force, time, and ultrasonics are critical parameters

•=

aluminum wire should not be used

•=

discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

•=

maximum stage temperature: 200ΓC

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

6