Datasheet TG70AA60, TG70AA40 Datasheet (SanRex)

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TG70AA40/60

TRIAC ISOLATED TYPE
Maximum Ratings Tj=25 unless otherwise specified
Symbol Item
TG70AA40
Ratings
TG70AA60
VDRM
Repetitive Peak Off-State Voltage
400 600 V
VDSM
Non-Repetitive Peak Off-State Voltage
450 650 V
Symbol Item Conditions Ratings
70
IT RMS R.M.S. On-State Current
ITSM Surge On-State Current
Tc 58 One cycle, 50Hz/60Hz, peak, non-repetitive
I2t I2t
P
GM
Peak Gate Power Dissipation
P
G AV
Average Gate Power Dissipation
IGM Peak Gate Current
V
GM
Peak Gate Voltage
A
1080/1200
A
6000
10
A2S
W
1
di/dt
Critical Rate of Rise of On-State Current
IG100mA Tj 25 V
D
1
2
V
DRMdIG
/
dt
1A/s
Tj
Operating Junction Temperature
Tstg Storage Temperature
VISO
Isolation Breakdown Voltage R.M.S.
Mounting Torque Mounting M4
Mass
A.C.1 minute
Recommended Value 1.0 1.4 10 14
3
W
A 10 V 50
A/s 40 125 40 125
2500
1.5 15
V
N m
kgf B
g
Symbol Item Conditions
Ratings
Min. Typ. Max.
I
DRM
Reptitive Peak Off-State Current
V
TM
Peak On-State Voltage
VD=V
DRM
, Single phase, half wave, Tj 125
On-State Current 100A IT25A, Inst. measurement
I
GT1
1
2
3
4
Gate Trigger Current
I
GT1
I
GT3
I
GT3
V
GD
Non-Trigger Gate Voltage
dv/dt
Critical Rate of Rise on-State Voltage,min.
Tj 25 IT1A VD6V
Tj 25 IT1A VD6V
mA
V
mA
Tj 25 IT1A VD6V
0.2
50
6
50
10
1.35 50
50
50
3
3
3
100
0.83
V
GT1
1
2
3
4
Gate Trigger Voltage
V
GT1
V
GT3
V
GT3
Tj 25 IT1A VD6V
Tj 25 IT1A VD6V
V
Tj 25 IT1A VD6V Tj 125 V
D
1
2
V
DRM
Tj 125 V
D
2
3
V
DRM
Exoponential wave.
dv/dt c
Critical Rate of Rise off-State Voltage at commutation
I
H
Holding Current
Rth j-c
Thermal Impedance
Tj 125 V
D
2
3
V
DRM
di/dt c 8A/ms
Tj 25 Junction to case
V
V/s
V/s
mA
/
W
Electrical Characteristics
Unit
A
TG70AA40/60 are isolated mould triac suitable for wide range of applications like copier, microwave oven, solid state switch, motor control, light control and heater control.
I
T AV
70A High surge capability 600A Isolated Nounting AC650V
Tab Terminals
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TG70AA40/60
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