Page 1
TFMS 5..0
Photo Modules for PCM Remote Control Systems
Available types for different carrier frequencies
Type f
TFMS 5300 30 kHz TFMS 5330 33 kHz
TFMS 5360 36 kHz TFMS 5370 36.7 kHz
TFMS 5380 38 kHz TFMS 5400 40 kHz
TFMS 5560 56 kHz
0
Type f
0
Description
The TFMS 5..0 – series are miniaturized receivers for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be decoded
by a microprocessor. The main benefit is the reliable
function even in disturbed ambient and the protection
against uncontrolled output pulses.
Features
D
Photo detector and preamplifier in one package
D
Output active low
(active high modules: TFMS 5..9)
D
Internal filter for PCM frequency
D
High immunity against ambient light
GND
D
Improved shielding against electric field
disturbance
D
5 Volt supply voltage, low power consumption
D
TTL and CMOS compatibility
D
Continuous transmission possible (t
V
S
OUT
/Tx0.4)
pi
94 8691
Block Diagram
Input
PIN
TELEFUNKEN Semiconductors
Rev . A4, 15-Jul-96
AGC
Control
Circuit
Band
Pass
Demodu-
lator
100 k
2
V
S
W
3
OUT
1
GND
94 8136
1 (6)
Page 2
TFMS 5..0
pp y ( )
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Supply Voltage (Pin 2) V
Supply Current (Pin 2) I
Output Voltage (Pin 3) V
Output Current (Pin 3) I
Junction T emperature T
Storage T emperature Range T
Operating T emperature Range T
Power Consumption (T
Soldering T emperature t x 10 s, 1 mm from case T
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Supply Current (Pin 2)
Transmission Distance Ev = 0, test signal see fig.7,
Output Voltage Low (Pin 3) I
Irradiance (30 – 40 kHz) Pulse width tolerance:
Irradiance (56 kHz) Pulse width tolerance:
Irradiance E
Directivity Angle of half transmission distance ϕ
VS = 5 V, Ev = 0 I
VS = 5 V, Ev = 40 klx, sunlight I
IR diode TSIP5201, I
= 0.5 mA,Ee = 0.7 mW/m2,
OSL
f = f
, tp/T = 0.4
o
t
±160ms, test signal (see fig.7)
po=tpi
t
±160ms, test signal (see fig.7)
po=tpi
x 85 °C) P
amb
= 1.5 A
F
V
E
E
SD
SH
d 35 m
OSL
e min
e min
e max
1/2
S
S
O
O
j
stg
amb
tot
sd
–0.3...6.0 V
5 mA
–0.3...6.0 V
5 mA
100
–25...+85
–25...+85
50 mW
260
0.4 0.5 0.8 mA
1.0 mA
250 mV
0.3 0.5 mW/m
0.4 0.7 mW/m
20 W/m
±55 deg
°
C
°
C
°
C
°
C
2
2
2
Application Circuit
2 (6)
TSUS 5...
TSIP 5...
94 8137
TFM. 5..0
330 W *)
2
4.7 mF *)
>10 k
W
optional
m
3
C
1
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 4.5V<V
<5.5V
S
TELEFUNKEN Semiconductors
Rev . A4, 15-Jul-96
+5V **)
GND
Page 3
TFMS 5..0
Typical Characteristics (T
1.0
0.8
0.6
0.4
e
0.2
e min
E / E – Rel. Responsitivity ( % )
0.0
0.7 0.8 0.9 1.0 1.1
94 8143
Figure 1. Frequency Dependence of Responsivity
1200
1000
m
800
f = f0"
D
f ( 3dB ) = f
f/f0 – Relative Frequency
5%
/10
0
Input Burst Duration
= 25_C unless otherwise specified)
amb
2
2.0
f(E)=f
0.0 0.4 0.8 1.2 1.6
E – Field Strength of Disturbance ( kV/m )
1.2
1.3
1.6
1.2
0.8
0.4
e min
E – Threshold Irradiance ( mW/m )
0.0
94 8147
Figure 4. Sensitivity vs. Electric Field Disturbances
100
2
10
0
f = f
2.0
0
600
400
l
po
t – Output Pulse Length ( s )
200
0
0.1 1.0 10.0
94 8145
= 950 nm, Optical Test Signal, Fig.7
Ee – Irradiance ( mW/m2 )
Figure 2. Sensitivity in Dark Ambient
100.0
2
e min
E – Threshold Irradiance ( mW/m )
94 8146
Correlation with Ambient Light Sources
(Disturbance Efect) : 1 0W/m2^1.4klx
(Stand.Illum.A,T=2855K)^8.2klx
(Daylight,T=5900K)
10.0
1.0
Ambient, l = 950 nm
0.1
0.01 0.1 1.0 10.0
E – Irradiance ( W/m2 )
100.0
100.0
10 kHz
1
100 Hz
e min
E – Threshold Irradiance ( mW/m )
94 8148
0.1
0.1 1 10 100
D
V
AC Voltage on DC Supply Voltage (mV)
sRMS –
1000
Figure 5. Sensitivity vs. Supply Voltage Disturbances
1.0
2
0.8
0.6
0.4
0.2
e min
E – Threshold Irradiance ( mW/m )
0.0
–30 0 30 60
94 8149
Sensitivity in dark Ambient
– Ambient Temperature ( °C )
T
amb
90
Figure 3. Sensitivity in Bright Ambient
TELEFUNKEN Semiconductors
Rev . A4, 15-Jul-96
Figure 6. Sensitivity vs. Ambient Temperature
3 (6)
Page 4
TFMS 5..0
n
)
Optical Test Signal
E
( IR diode TSIP 5201, I
e
F
= 1.5 A, 30 pulses, f = f0, T = 10 ms
1.0
V
O
V
OH
V
OL
E
V
O
V
OH
V
OL
tpi *
T
w 400 ms is recommended for optimal functio
* t
pi
Output Signal
tpo = tpi "160 ms
t
po
Figure 7. Output Function
Optical Test Signal
e
600 ms 600 ms
T = 60 ms
Output Signal, ( see Fig.10 )
T
on
0.8
T
t
on
0.6
T
off
94 8133
0.4
off
0.2
on
T ,T - Output Pulse Length ( ms )
l
= 950 nm, Optical T est Signal, Fig.8
0.0
0.1 1 10 100 1000
t
94 8151
Ee – Irradiance ( mW/m2 )
10000
Figure 10. Output Pulse Diagram
1.0
0.8
t
0.6
94 8134
0.4
s
I – Supply Current ( mA )
0.2
0.0
–30 0 30 60
T
off
t
T
– Ambient Temperature ( °C )94 8150
amb
Vs = 5 V
90
Figure 8. Output Function
2
8
6
4
2
e min
E – Threshold Irradiance ( mW/m )
0
0.05 0.25
94 8144
0.15 0.35
Figure 9. Sensitivity vs. Duty Cycle
4 (6)
/T – Duty Cycle
t
p
Figure 11. Supply Current vs. Ambient Temperature
1.0
0.8
0.6
0.4
0.2
rel
s – Relative Responsitivity ( % )
94 8154
0.0
800 900 1000
l
– Wavelength ( nm )
1100
0.45
Figure 12. Spectral Response
TELEFUNKEN Semiconductors
Rev . A4, 15-Jul-96
Page 5
TFMS 5..0
–30
–40
0.6
– Relative Transmission Distance
d
rel
010–10–20 20
00.4 0.2 0.2 0.4
Figure 13. Vertical Directivity ϕ
Dimensions in mm
0.6
f
y
f
x
94 8152
y
–30
–40
0.6
94 8153
– Relative Transmission Distance
d
rel
Figure 14. Horizontal Directivity ϕ
010–10–20 20
00.4 0.2 0.2 0.4
0.6
x
TELEFUNKEN Semiconductors
Rev . A4, 15-Jul-96
96 12116
5 (6)
Page 6
TFMS 5..0
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol ( 1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
6 (6)
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
Rev . A4, 15-Jul-96
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