Preliminary specification
File under Integrated Circuits, IC01
1995 Jun 23
Page 2
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
FEATURES
• The tuning system has an optimized IC partitioning both
from application (omitting interferences) and flexibility
(removable front panel option) point of view: the tuning
synthesizer is on-chip with the radio
• The tuning quality is superior and requires no IF counter
for stop-detection; it is insensitive to ceramic filter
tolerances
• In combination with the microcontroller, fast, low-power
operation of preset mode, manual search, automatic
search and automatic store are possible
• The local (internal) controller function facilitates reduced
and simplified microcontroller software
• The high integration level means fewer external
components with regard to the communication between
the radio and the microcontroller and a simple and small
printed-circuit board (PCB)
• The inherent FUZZY LOGIC behaviour of STR (Self
Tuned Radio), which mimics hand tuning, yields a
potentially fast yet reliable tuning operation
• The level of the incoming signal at which the radio must
lock is software programmable
• Two programmable ports
• FM-on/off port to control the external FM front end
• High selectivity with distributed IF gain
• Soft mute
• Signal dependent stereo-blend
• High impedance MOSFET input on AM
• Wide supply voltage range of 2.5 to 12 V
• Low current consumption 18 mA at AM and FM
(including tuning synthesizer for AM)
• Low noise figure
• Low output distortion
• Due to the new tuning concept, the tuning is
independent of the channel spacing.
GENERAL DESCRIPTION
The TEA5762 is a 44-pin integrated AM-radio and FM-IF
and demodulator part including a novel tuning concept.
The radio part is based on the TEA5712.
It is designed for the use with an external FM-front end.
The new tuning concept combines the advantages of hand
tuning with electronic facilities and features. User
intelligence is incorporated into the tuning algorithm and
an improvement of the analog signal processing is used for
the AFC function.
ORDERING INFORMATION
TYPE
NUMBER
TEA5762H QFP44plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 × 10× 1.75 mm SOT307-2
1995 Jun 232
NAMEDESCRIPTIONVERSION
PACKAGE
Page 3
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
QUICK REFERENCE DATA
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
CC1
V
CC2
V
tune
I
CC1
I
DDD
I
CC2
T
amb
AM performance; note 1
V
10
V
i1
THDtotal harmonic distortionV
FM performance; note 2
V
10
V
i4
THDtotal harmonic distortionIF filter
supply voltage 12.5−12V
supply voltage 2 for tuning−−12V
tuning voltage0.7−V
CC2
− 0.75 V
supply current 1AM mode121518mA
FM mode131619mA
digital supply currentAM mode−3.3−mA
FM mode−2.7−mA
supply current 2 for tuning in preset
−−640µA
mode (band-end to band-end)
operating ambient temperature−15−+60°C
AF output voltageVi1=5mV364570mV
RF sensitivity input voltageS/N = 26 dB405570µV
=1mV−0.82.0%
i1
AF output voltageVi4=5mV404857mV
IF sensitivity input voltageV10= −3 dB;
−2030µV
V10= 0 dB at Vi4=10mV
−0.30.8%
SFE10.7MS3A20K-A
MPX performance; note 3
α
cs
channel separationVi4=30mV2630−dB
Notes
1. Conditions AM: V
CC1
=3V; V
CC2
=12V; V
=3V; fi= 1 MHz; m = 0.3; fm= 1 kHz; measured in Fig.8 with S1 in
DDD
position A and S2 in position B; unless otherwise specified.
The TEA5762 is an integrated radio circuit with
AM-receiver and FM-IF part with demodulator and stereo
decoder. The circuit includes digital tuning and control
functions.
The radio
The AM circuit incorporates a double balanced mixer,
a one-pin low voltage oscillator (up to 30 MHz) and is
designed for distributed selectivity.
The AM input is designed to be connected to the top of
a tuned circuit. AGC controls the IF amplification and for
large signals it lowers the input impedance of the
AM front end.
The first AM selectivity can be an IF-Tank (IFT) or an IFT
combined with a ceramic filter; the second one is an IFT.
For FM operation an external FM front end is necessary.
This is switched on and off by the FM-ON/OFF signal
which is generated in the bus system.
The AFC circuit in the TEA5762 provides a tuning voltage
to drive the VCO of the external FM front end.
The frequency of the external VCO is counted in the Self
Tuned Radio (STR) tuning system.
The FM-IF circuit is designed for distributed IF ceramic
filters. The FM quadratic detector uses a ceramic
resonator.
The PLL stereo decoder incorporates a signal dependent
stereo-blend circuit and a soft-mute circuit.
Tuning
The tuning-concept of STR is based on FUZZY LOGIC:
it mimics hand tuning (hand tuning is a combination of
coarse and fine tuning to the qualitatively best frequency
position). As a consequence the tuning system is very fast.
The tuning algorithm, which is controlled by the sequential
circuit (see Fig.1), is completely integrated. Thus only a
few external components are required.
The bus and the microcontroller can be kept very simple.
The bus only consists of three wires (bus-clock, data and
write enable). The microcontroller must basically give two
instructions:
• Preset operation
• Search operation.
PRESET OPERATION
In preset mode, the microcontroller has to load information
such as frequency band, frequency and mono/stereo. This
information has to be sent via the bus to STR. The internal
algorithm controls the tuning sequence as follows: the
information is loaded into a shift register, a last-station
memory and the counter. The Automatic Frequency
Control (AFC) is switched off. The counter starts counting
the VCO frequency and the tuning voltage is varied until
the desired frequency roughly equals the real frequency.
The AFC is then switched on and the counter is switched
off. The real frequency is now tuned precisely to the
desired frequency.
After the AFC has tuned the real frequency to the desired
frequency an in-lock signal can be generated. In order to
obtain a reliable in-lock signal, there are two parameters
measured: the field strength and the S-curve. The field
strength indicates the strength of the station and by
looking at the S-curve the system can distinguish false
in-locks from real in-locks (false in-locks occur on the
wrong slope of the S-curve).
In the FM mode the tuning voltage controls the VCO of the
external FM front end and the frequency of the VCO is
counted in the TEA5762.
In the event of fading or pulling, the in-lock signal becomes
logic 0, the synthesizer will be switched on again and the
algorithm will be repeated.
EARCH OPERATION
S
During a search operation, the only action the
microcontroller has to take is: sending the desired band
plus the direction and the search sensitivity level to STR.
The search operation is performed by the charge pump
until an in-lock signal is generated (combination of
measuring the field strength and the S-curve). The AFC
then fine tunes to the station. The frequency belonging to
the found station will be counted by the counter and written
into the last-station memory and the shift register of the
counter. At this time the frequency is available in the shift
register and can be read by the microcontroller. The
microcontroller decides whether the frequency is within the
desired frequency band. If it is, this frequency can be
stored under a preset and if it is not, a new search action
should be started.
1995 Jun 237
Page 8
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
Description of the bus
The TEA5762 radio has a bus which consists of three
wires, as shown in Table 1.
These three signals, together with the mono/stereo pin
(MO/ST, pin 24), communicate with the microcontroller.
The mono/stereo indicator has two functions, which are
controlled by the bus-clock, as shown in Table 2.
The TEA5762 has a 25-bit shift register; see Table 3 for an
explanation of the shift register bits.
If in search mode no transmitter can be found, all
frequency bits of the shift register are set to logic 1.
The bus protocol is depicted in Figs 3 and 4.
Table 3 Explanation of the shift register bits
BITDESCRIPTIONLOGIC STATERESULT
S.24 (MSB)search start/end0after a search when a station is found or after a preset
1during the search action
D.23search up/down0indicates if the radio has to search down
1indicates if the radio has to search up
M.22mono/stereo0stereo is allowed
1mono is required (radio switched to forced mono)
B0.21bandsee Table 4selects FM/MW/LW/SW band
B1.20bandsee Table 4selects FM/MW/LW/SW band
P0.19portnote 1user programmable bits which e.g. can be used as
P1.18portnote 1user programmable bits which e.g. can be used as
S0.17search-level of stationsee Table 5determines the locking field strength during an
S1.16search-level of stationsee Table 5determines the locking field strength during an
15dummy−buffer
F.14 to F.0 (LSB)frequency−determine the tuning frequency of the radio;
automatic search, automatic store or manual search
automatic search, automatic store or manual search
see Table 6 for the bit values
Note
1. The output pins 30 and 31 can drive currents up to 5 mA. Bits 19 (P0) and 18 (P1) control the output voltage of the
control pins P0 (pin 30) and P1 (pin 31):
a) bit 19 (P0) LOW sets P0 (pin 30) to LOW
b) bit 19 (P0) HIGH sets P0 (pin 30) to HIGH
c) bit 18 (P1) LOW sets P1 (pin 31) to LOW
d) bit 18 (P1) HIGH sets P1 (pin 31) to HIGH.
1995 Jun 238
Page 9
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
Table 4 Truth table for bits 21 and 20
B0B1BAND SELECT
00FM
(1)
01MW
10LW
11SW
Note
1. When FM is selected, the control output FM-ON/OFF
is set LOW to switch on the external FM front end.
1. The given values for signal reception are
corresponding to a −3 dB point of 20 µV for FM.
Table 6 Values for bits 14 to 0
BITBIT VALUEFMVALUE
(kHz)
142
132
122
112
102
92
82
72
62
52
42
32
22
12
02
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
−16384
1024008192
512004096
256002048
128001024
6400512
3200256
1600128
80064
40032
20016
1008
504
252
12.51
Notes
1. FM value of the affected oscillators;
FM VALUE = FM-RF + FM-IF.
2. AM value of the affected oscillators;
AM VALUE = AM-RF + AM-IF.
(1)
AM
VALUE
(kHz)
(2)
1995 Jun 239
Page 10
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
READING DATA
While write enable is LOW data can be read by the
microcontroller. At a rising edge of the bus-clock, data is
shifted out of the register. This data is available from the
point where the bus-clock is HIGH until the next rising
edge of the bus-clock occurs; see Fig.3
To read the entire shift register 24 clock pulses are
necessary.
handbook, full pagewidth
WRITE-ENABLE
BUS-CLOCK
DATA
data shiftdata available after search ready
MSB is LOW
WRITING DATA
While write enable is HIGH the microcontroller can
transmit data to the TEA5762 (hard mute is active). At a
rising edge of the bus-clock, the register shifts and accepts
one bit into LSB. At clock LOW the microcontroller writes
data; see Fig.4.
To write the entire shift register 25 clock pulses are
necessary.
data read
data available
MBE817
handbook, full pagewidth
WRITE-ENABLE
BUS-CLOCK
DATA
Fig.3 Read data.
MBE818
data changedata shift
Fig.4 Write data.
1995 Jun 2310
Page 11
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
BUS TIMING
handbook, full pagewidth
WRITE-ENABLE
V
BUS-CLOCK
DATA
IH
V
IL
t
HIGHtLOW
t
da
Fig.5 Bus timing.
Table 7 Digital inputs
SYMBOLPARAMETERMIN.MAX.UNIT
Digital inputs
V
IH
V
IL
HIGH level input voltage1.4−V
LOW level input voltage−0.6V
Timing
f
clk
t
HIGH
t
LOW
t
da
clock input−300kHz
clock HIGH time1.67−µs
clock LOW time1.67−µs
shift register available after ‘search ready’−14µs
MBE819
1995 Jun 2311
Page 12
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
CC1
P
tot
T
stg
T
amb
T
j
V
es
Note
1. Charge device model: equivalent to discharging a 200 pF capacitor via a 0 Ω series resistor.
THERMAL CHARACTERISTICS
SYMBOLPARAMETER VALUE UNIT
R
th j-a
supply voltage 1013.2V
total power dissipationT
=70°C−250mW
amb
storage temperature−65+150°C
operating ambient temperature−15+60°C
operating junction temperature−15+150°C
electrostatic handling for all pinsnote 1−±200V
thermal resistance from junction to ambient in free air65K/W
1995 Jun 2312
Page 13
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
CHARACTERISTICS
V
=3V; T
CC1
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
CC1
V
CC2
V
DDD
V
tune
I
CC2
f
clk(max)
I
CC1
I
DDD
I
CC1
I
DDD
t
search
t
acqu
f
band
∆f
FM
∆f
AM
I
P0/P1(sink)
I
P0/P1(source)
=25°C; unless otherwise specified.
amb
supply voltage 12.5−12V
supply voltage 2 for tuning−−12V
digital supply voltage2.5−12V
tuning voltage0.7−V
supply current 2 for tuning in preset mode
−−640µA
CC2
− 0.75 V
(band-end to band-end)
maximum bus-clock frequency−−300kHz
current consumption during acquisition of V
AM mode121518mA
CC1
FM mode12.515.518.5mA
current consumption during acquisition of I
DDD
AM mode−4.8−mA
FM mode−5.5−mA
current consumption after acquisition of V
CC1
AM mode121518mA
FM mode131619mA
current consumption after acquisition of I
DDD
AM mode−3.2−mA
FM mode−2.7−mA
synthesizer auto-search time for empty bandFM mode−−10s
synthesizer preset acquisition time between two
band limits
FM−100−ms
MW−150−ms
LW−1000−ms
(1)
SW−500
−ms
frequency band range of the synthesizerAM mode0.144−30MHz
AFC inaccuracy of FMwith Mitsumi
−−1kHz
front end
AFC inaccuracy of AM−−100Hz
sink current of software programmable
V
=5V−−7mA
CC1
output P0/P1
source current of software programmable
V
=5V5−7mA
CC1
output P0/P1
Note
1. Depending on band.
1995 Jun 2313
Page 14
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
AM CHARACTERISTICS
Input frequency = 1 MHz; m = 0.3; f
Vi1measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input
level; refer to test circuit (see Fig.8); unless otherwise specified.
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
10
V
i1
V
il
AF output voltageVi1=5mV364570mV
RF sensitivity input voltageS/N = 26 dB405570µV
large signal voltage handling
capacity
PSSRpower supply ripple rejection
/∆V7)
(V
10
I
i
C
i
G
c
input current (pin 2)V44= 0.2 V−0−µA
input capacitance (pin 2)V44= 0.2 V−−4pF
front end conversion gainV44= 0.2 V51014dB
INTERNAL CIRCUITS
Table 8 Equivalent pin circuits and pin voltages
DC VOLTAGE
PINSYMBOL
1RIPPLE2.12.1
(V)
AMFM
EQUIVALENT CIRCUIT
7
2AM-RFI00
3RFGND1−−
4CGND00
5COUNTI00
17
1
3 kΩ
4
2
5
1 kΩ
70 pF
MBE821
MBE822
6AMOSC00
7V
CC1
1995 Jun 2318
3.03.0
4
6
4
MBE823
MBE824
Page 19
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
DC VOLTAGE
PINSYMBOL
8TUNE−−
(V)
AMFM
EQUIVALENT CIRCUIT
22
8
9VCO1.30.95
10AFO0.60.7
11MPXI1.231.23
26
9
17
10
17
150 kΩ150 kΩ
MBE825
1 kΩ
10 kΩ
5 kΩ
MBE826
MBE827
1995 Jun 2319
11
9.5 kΩ
17
MBE828
Page 20
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
DC VOLTAGE
PINSYMBOL
12LFI0.10.8
(V)
AMFM
EQUIVALENT CIRCUIT
4 kΩ
13MUTE0.70.7
14AFLO0.650.65
12
17
7 kΩ50 kΩ
13
17
14
5 kΩ
17
13 kΩ
MBE829
MBE830
MBE831
15AFRO0.650.65
1995 Jun 2320
15
5 kΩ
17
MBE832
Page 21
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
DC VOLTAGE
PINSYMBOL
16PILFIL0.950.95
(V)
AMFM
EQUIVALENT CIRCUIT
16
10 kΩ
10 kΩ
17IFGND00
18FMDEM−1.0
19AFC
20AFC
(n)
(p)
−−
−−
21FSI−−
17
18
17
1.4 V
180 Ω
910 Ω
MBE834
10 kΩ10 kΩ
19/20
MBE835
40 kΩ
MBE833
22V
23V
CC2
DDD
1995 Jun 2321
21
12 to 34 kΩ
(dependent on
bits 16 and 17)
26
MBE836
−−
3.03.0
Page 22
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
DC VOLTAGE
PINSYMBOL
24MO/ST−−
(V)
AMFM
EQUIVALENT CIRCUIT
100 Ω
24
25XTAL−−
26DGND00
27BUS-CLOCK−−
26
25
26
27
26
MBE837
50 kΩ50 kΩ50 kΩ
MBE838
MBE839
28DATA−−
29WRITE-
ENABLE
1995 Jun 2322
−−
100 Ω
28
50 kΩ
29
26
100 kΩ
MBE840
Page 23
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
DC VOLTAGE
PINSYMBOL
30P0−−
31P1−−
(V)
AMFM
EQUIVALENT CIRCUIT
23
120 kΩ
30/31
20 kΩ
100 kΩ
32AFC−−
33FM-IF2I−0.73
34V
STAB(B)
1.41.4
26
34
20 kΩ
32
34
140 Ω
33
2.2 kΩ
17
7
1 kΩ
1
MBE841
MBE842
6 pF
MBE843
1995 Jun 2323
34
MBE844
Page 24
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
DC VOLTAGE
PINSYMBOL
35FM-IFO1−0.69
(V)
AMFM
EQUIVALENT CIRCUIT
34
36AM-IF2I/O1.41.4
37FM-IFI1−0.73
35
34
36
17
38
140 Ω
37
17
560 Ω
3.6 kΩ3.6 kΩ
1.9 kΩ
MBE845
MBE846
6 pF
MBE847
38V
STAB(A)
1.41.4
39FM-ON/OFF−−
1995 Jun 2324
7
1 kΩ
1
38
500 Ω
39
26
MBE848
MBE849
Page 25
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
DC VOLTAGE
PINSYMBOL
40AM-MIXER1.41.4
(V)
AMFM
EQUIVALENT CIRCUIT
40
38
MBE850
41AM-IF1I1.41.4
42RFGND200
43n.c.−−
44AGC0.10.7
38
3 kΩ
41
17
1 kΩ
44
17
7.5 kΩ
1 kΩ
7.5 kΩ
MBE851
1 kΩ
MBE852
1995 Jun 2325
Page 26
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
TEST AND APPLICATION INFORMATION
DATA
(8)
K2
BUS-
CLOCK
WRITE-
ENABLE
STAB(B)
V
330 Ω
i4
V
50 Ω
CC1
V
100 nF
K1
(7)
1 nF
50 Ω
10.7 MHz
10 kΩ
21
1817272829333537
2.2 µF
16
MO/ST
470 nF
24
PILOT
DETECTOR
19 kHz
FM
DETECTOR
FM
IF2
FM
IF1
TUNER
SWITCH
39
FM-ON/OFF
2.2 kΩ
12
470 nF
50 kΩ
68 kΩ
9
PLL
38 kHz
AM/FM
INDICATOR
STATUS
38
34
7
STAB(A)VSTAB(B)
V
CC1
V
100 nF
12 nF
14
stereo
DECODER
IN-LOCK
DETECTOR
up
down
REGISTER
SHIFT REGISTER
STABILIZER
µF
100
10 Ω
220 nF
100 nF
AFLO
AFRO
100 nF
12 nF
15
mono
MATRIX
stereo
level
FM
MEMORY
LAST-STATION
PRESCALER
5231
4
10
18 kΩ
4.7 µF
S4
BA
13
MUTE
SDS
PUMP
hard mutelevel
CHARGE
CIRCUIT
SEQUENTIAL
AM
COUNTER
PROGRAMMABLE
MULTIPLEXER
(6)
L6
pF
BB204
TUNE
8.2 kΩ
AFC
WINDOW
CRYSTAL
25
75 kHz
470 nF
20
19
TDA5762
DETECTOR
OSCILLATOR
26
DGND
STAB(B)
V
32
(1)
(5)
L5
V/I
AM
AGC
AM
AM
AM
AM
FRONT
2
L1
i1
V
50 Ω43 Ω
CONVERTER
10113
DETECTOR
IF
MIXER
6404136443130822
OSCILLATOR
END
680 pF
6.8 Ω
1 MHz
MBE814
MPXI
50 Ω
330 pF
i3
V
50 Ω
220 nF
S3
S2
A
B
(2)
A
470 nF 10 nF
(4)
10 µF
B
A
S1
L2
18 pF
18 pF
B
L4
220 µF
3 kΩ
(3)
L3
BB112
(1) L1 = 22281-30091.
(2) L2 = A7BRS-12287Y.
(3) L3 = A7MCS-11844N.
5 kΩ
CC2
V
P0TUNEP1
STAB(B)
V
50 Ω
450 kHz
i2
V
STAB(A)
V
47 kΩ
470 pF
(4) L4 = A7MCS-11845Y.
(5) L5 = A7MCS-11845Y.
(6) L6 = S18 301SS-0200.
handbook, full pagewidth
Fig.8 Test circuit.
TUNE
(7) K1 = SFT10.7MS3.
(8) K2 = CDA10.7MC40-A.
1995 Jun 2326
Page 27
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
APPLICATION INFORMATION
AFLO
V
CC1
MO/ST
10 kΩ
470 nF
2.2 µF
24
16
470 nF
50 kΩ
2.2 kΩ
68 kΩ
9
12
12 nF
100 nF
14
AFRO
100 nF
15
12 nF
13
4.7 µF
470 nF
19
STAB(B)
V
(5)
L5
32
20
MBE816
STAB(A)
V
10 µF
(2)
220 nF
(3)
L2
330 pF
10 nF
470 nF
(4)
L3
18 pF
CC2
V
TUNE
P0
P1
L4
BB112
STAB(B)
V
STAB(A)
V
47 kΩ
handbook, full pagewidth
Fig.9 Application circuit.
TUNE
11 3
100 nF
21
CLOCK
WRITE-
ENABLE
1817
2728293335
TEA5762
37
(8)
K3
BUS-
DATA
STAB(B)
V
K2
(7)
K1
(6)
10
6404136443130822
150 Ω
220 Ω
150 Ω
CC
V
TUNE
IF-OUT
OSC-OUT
FM-Front end
Mitsumi FE415-G11
V
1995 Jun 2327
470 pF
18 pF
7
CC1
10 Ω
23
100 nF
1
100
µF
220 nF
38
68 kΩ
34
STAB(A)VSTAB(B)
V
V
39
470
n.c.
10 kΩ
150 kΩ
pF
ANT
220 kΩ
AGC
GND
4
5
25
26
120 Ω
75 kHz
GND
TUNE
BB112
47 kΩ
2
22 nF
18 pF
(1)
L1
(1) L1 = 250 µH ferroceptor.
(2) L2 = A7BRS-12287Y.
(3) L3 = A7MCS-11844N.
(4) L5 = A7MCS-11845Y.
(5) L4 = A7MCS-11845Y.
(6) K1 = SFT10.7MS3.
(7) K2 = SFT10.7MS3.
(8) K3 = CDA10.7MC40-A.
Page 28
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
PACKAGE OUTLINE
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
c
y
X
A
3323
34
pin 1 index
44
1
22
Z
E
e
H
E
E
w M
b
p
12
11
A
2
A
A
1
detail X
SOT307-2
Q
(A )
3
θ
L
p
L
w M
b
e
DIMENSIONS (mm are the original dimensions)
mm
OUTLINE
VERSION
SOT307-2
A
max.
2.10
0.25
0.05
1.85
1.65
UNITA1A2A3b
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
p
D
H
D
cE
p
0.40
0.20
0.25
0.14
0.25
IEC JEDEC EIAJ
Z
D
B
02.55 mm
scale
(1)
(1)(1)(1)
D
10.1
9.9
REFERENCES
eH
10.1
9.9
12.9
0.81.3
12.3
1995 Jun 2328
v M
H
v M
D
A
B
LLpQZywv θ
E
12.9
12.3
0.95
0.55
0.85
0.75
0.150.10.15
EUROPEAN
PROJECTION
Z
D
1.2
1.2
0.8
0.8
ISSUE DATE
92-11-17
95-02-04
E
o
10
o
0
Page 29
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
SOLDERING QFP or SO
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
cases reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
Reflow soldering
Reflow soldering techniques are suitable for all QFP and
SO packages.
The choice of heating method may be influenced by larger
plastic QFP packages (44 leads, or more). If infrared or
vapour phase heating is used and the large packages are
not absolutely dry (less than 0.1% moisture content by
weight), vaporization of the small amount of moisture in
them can cause cracking of the plastic body. For more
information, refer to the Drypack chapter in our
Reference Manual”
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
(order code 9398 510 63011).
(order code 9398 652 90011).
“Quality
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
• The footprint must be at an angle of 45° to the board
direction and must incorporate solder thieves
downstream and at the side corners.
Even with these conditions, do not consider wave
soldering the following packages: QFP52 (SOT379-1),
QFP100 (SOT317-1), QFP100 (SOT317-2),
QFP100 (SOT382-1) or QFP160 (SOT322-1).
SO
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
ETHOD (QFP OR SO)
M
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
QFP
Wave soldering is not recommended for QFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1995 Jun 2329
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds at 270 to 320 °C.
Page 30
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Jun 2330
Page 31
Philips SemiconductorsPreliminary specification
Self tuned radioTEA5762
NOTES
1995 Jun 2331
Page 32
Philips Semiconductors – a worldwide company
Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)
BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. (02)805 4455, Fax. (02)805 4466
Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,
Tel. (01)60 101-1236, Fax. (01)60 101-1211
Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,
All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.
Printed in The Netherlands
533061/1500/01/pp32Date of release: 1995 Jun 23
Document order number:9397 750 00178
Loading...
+ hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.