Datasheet TEA5757H-V1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1996 Jan 09
File under Integrated Circuits, IC01

1999 Aug 26

INTEGRATED CIRCUITS

TEA5757; TEA5759

Self Tuned Radio (STR)

1999 Aug 26 2

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

FEATURES

• The tuningsystem has an optimized IC partitioning both
from application (omitting interferences) and flexibility
(removable front panel option) point of view: the tuning
synthesizer is on-chip with the radio

• Thetuning quality issuperior and requiresno IF-counter
for stop-detection; it is insensitive to ceramic filter
tolerances

• In combination with the microcontroller, fast, low-power
operation of preset mode, manual-search, auto-search
and auto-store are possible

• Thelocal (internal) controller functionfacilitatesreduced
and simplified microcontroller software

• The high integration level (radio and tuning synthesizer
on one chip) means fewer external components with
regard to the communication between the radio and the
microcontroller (90% less components compared to the
digital tuning application of a radio IC with external PLL
tuning function) and a simple and small printed-circuit
board

• Therewill be no applicationconsiderationsfor the tuning
system, with regards to quality and high integration
level, since there will be no external 110 MHz buffers,
loop filter or false lock elimination

• The inherent FUZZY LOGIC behaviour of the Self
Tuned Radio (STR), whichmimics hand tuning, yields a
potentially fast yet reliable tuning operation

• The level of the incoming signal at which the radio must
lock is software programmable

• Two programmable ports

• High selectivity with distributed IF gain

• Soft mute

• Signal dependent stereo-blend

• High impedance MOSFET input on AM

• Wide supply voltage range of 2.5 to 12 V

• Low current consumption 18 mA at AM and FM

(including tuning synthesizer)

• High input sensitivity

• Low output distortion

• Due to the new tuning concept, the tuning is

independent of the channel spacing.

GENERAL DESCRIPTION

The TEA5757; TEA5759 is a 44-pin integrated AM/FM
stereo radio circuit including a novel tuning concept.
The radio part is based on the TEA5712.

The TEA5757 is used in FM-standards in which the local
oscillator frequency is above the radio frequency
(e.g. European and American standards).

The TEA5759 is the version in which the oscillator
frequency is below the radio frequency
(e.g. Japanese standard).

Thenew tuning conceptcombinesthe advantages ofhand
tuning with electronic facilities and features. User
‘intelligence’ is incorporated into the tuning algorithm and
animprovementofthe analog signal processing isusedfor
the AFC function.

ORDERING INFORMATION

TYPE NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TEA5757H QFP44 plastic quad flat package;44 leads (lead length 1.3 mm); body

10 × 10 × 1.75 mm

SOT307-2

TEA5759H

1999 Aug 26 3

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

QUICK REFERENCE DATA

Notes

1. V

CC1

=3V;V

CC2

=12V;V

DDD

=3V;fi= 1 MHz; m = 0.3; fm= 1 kHz; measured in Fig.9 with S1 in position A andS2

in position B; Vn refers to pin voltages; V

i(n)

refers to test circuit (see Fig.9).

2. V

CC1

=3V; V

CC2

= 12 V; V

DDD

=3V; fi= 100 MHz; ∆fm= 22.5 kHz; fm= 1 kHz; measured in Fig.9 with S2, S3

and S5 in position A; Vn refers to pin voltages; V

i(n)

refers to test circuit (see Fig.9).

3. V

CC1

=3V; V

CC2

= 12 V; V

DDD

=3V; V

i3(L + R)

= 155 mV; V

pilot

= 15.5 mV; fi= 1 kHz; measured in Fig.9 with S2

and S3 in position B.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC1

supply voltage 2.5 − 12 V

V

CC2

supply voltage for tuning −−12 V

V

tune

tuning voltage 0.7 − V

CC2

− 0.75 V

I

CC1

supply current AM mode 12 15 18 mA

FM mode 13 16 19 mA

I

DD

supply current AM mode − 3.3 − mA

FM mode − 2.7 − mA

I

CC2

supply current for tuning in preset
mode (band-end to band-end)

−−800 µA

T

amb

ambient temperature −15 − +60 °C
AM performance; note 1
V

10

AF output voltage Vi1=5mV 364570 mV
V

i1

RF sensitivity input voltage (S+N)/N = 26 dB 40 55 70 µV
THD total harmonic distortion V

i1

=1mV − 0.8 2.0 %
FM performance; note 2
V

10

AF output voltage Vi5=1mV 404857 mV

V

i5

RF limiting sensitivity V10at −3 dB;

V10is 0 dB at Vi5=1mV

0.4 1.2 3.8 µV

THD total harmonic distortion IF filter

SFE10.7MS3A20K-A

− 0.3 0.8 %

MPX performance; note 3

α

cs

channel separation 26 30 − dB

1999 Aug 26 4

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

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BLOCK DIAGRAM

handbook, full pagewidth

PRESCALER

PROGRAMMABLE

COUNTER

STABILIZER

WINDOW

DETECTOR

LAST-STATION

MEMORY

AM/FM

INDICATOR

IN-LOCK

DETECTOR

FM

DETECTOR

PILOT

DETECTOR

CHARGE

PUMP

MULTIPLEXER

CRYSTAL

OSCILLATOR

SHIFT REGISTER

FM

FRONT-END

FM

OSCILLATOR

FM
IF2

FM
IF1

FM

MIXER

SEQUENTIAL

CIRCUIT

STATUS

REGISTER

AM

FRONT-END

AM

OSCILLATOR

AM

DETECTOR

V/I

CONVERTER

AM

MIXER

AM

IF

AGC

AFC

hard mute

level

PLL

DECODER

MATRIX

SDS

MUTE

up

down

level

RFGND

DATA

BUS-CLOCK

WRITE-ENABLE

FM-RFI

V

STAB(A)

V

STAB(B)

AM-RFI

XTAL

RIPPLE

25

23
1

26

30

31

2

AGC

AM-IFI/O2

AM-MIXERAMOSC

AM-IFI1

6

40 41

36 44

822

32

20

19

13

15

14

9

12

24

16

181739 37 333535

38

43
42

28
27
29

34
7

21

10

11

4

MO/ST

AFRO

MUTE

AFC

(n)

AFC

(p)

AFC

VCO

LFI

PILFIL

AFLO

stereo

stereo

mono

38 kHz

19 kHz

FM-IFI1 FM-IFI2

FM-IFO1

FM-MIXER

FMOSC

FM-RFO

V

CC1

V

DDD

TEA5757;

TEA5759

FM

AM

DGND

P1
P0

TUNE

RFGND

MPXI

AFO

V

CC2

IFGND FSIFMDEM

MHA111

Fig.1 Block diagram.

1999 Aug 26 5

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PINNING

SYMBOL PIN DESCRIPTION

RIPPLE 1 ripple capacitor input
AM-RFI 2 AMRF input
FM-RFO 3 parallel tuned FMRF circuit to ground
RFGND 4 RF ground and substrate
FMOSC 5 parallel tuned FM-oscillator circuit to ground
AMOSC 6 parallel tuned AM-oscillator circuit to ground
V

CC1

7 supply voltage
TUNE 8 tuning current output
VCO 9 voltage controlled oscillator input
AFO 10 AM/FM AF output (output impedance typical 5 kΩ)
MPXI 11 stereo decoder input (input impedance typical 150 kΩ)
LFI 12 loop-filter input
MUTE 13 mute input
AFLO 14 left channel output (output impedance typical 4.3 kΩ)
AFRO 15 right channel output (output impedance typical 4.3 kΩ)
PILFIL 16 pilot detector filter input
IFGND 17 ground of IF, detector and MPX stage
FMDEM 18 ceramic discriminator input
AFC

(n)

19 AFC negative output

AFC

(p)

20 AFC positive output
FSI 21 field-strength indicator
V

CC2

22 supply voltage for tuning
V

DDD

23 digital supply voltage
MO/ST 24 mono/stereo and tuning indication output
XTAL 25 crystal input
DGND 26 digital ground
BUS-CLOCK 27 bus-clock input
DATA 28 bus data input/output
WRITE-ENABLE 29 bus write-enable input
P0 30 programmable output port (P0)
P1 31 programmable output port (P1)
AFC 32 450 kHz LC-circuit
FM-IFI2 33 FMIF input 2 (input impedance typical 330 Ω)
V

STAB(B)

34 internal stabilized supply voltage (B)
FM-IFO1 35 FMIF output 1 (output impedance typical 330 Ω)
AM-IFI/O2 36 input/output to IF-Tank (IFT); output: current source
FM-IFI1 37 FMIF input 1 (input impedance typical 330 Ω)
V

STAB(A)

38 internal stabilized supply voltage (A)
FM-MIXER 39 ceramic filter output (output impedance typical 330 Ω)
AM-MIXER 40 open-collector output to IFT

1999 Aug 26 6

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

AM-IFI1 41 IFT or ceramic filter input (input impedance typical 3 kΩ)
RFGND 42 FMRF ground
FM-RFI 43 FMRF aerial input (input impedance typical 40 Ω)
AGC 44 AGC capacitor input

SYMBOL PIN DESCRIPTION

Fig.2 Pin configuration.

handbook, full pagewidth

TEA5757H
TEA5759H

MHA112

1
2
3
4
5
6
7
8

9
10
11

33
32
31
30
29
28
27
26
25
24
23

12

13

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

RIPPLE

AM-RFI

FM-RFO

RFGND
FMOSC

AMOSC

V

CC1

TUNE

VCO

AFO

MPXI

FM-IFI2
AFC
P1
P0
WRITE-ENABLE
DATA

BUS-CLOCK

DGND
XTAL
MO/ST
V

DDD

LFI

MUTE

AFLO

AFRO

PILFIL

IFGND

FMDEM

AFC

(n)

AFC

(p)

FSI

V

CC2

AGC

FM-RFI

RFGND

AM-IFI1

AM-MIXER

FM-MIXER

V

STAB(A)

FM-IFI1

AM-IFI/O2

FM-IFO1

V

STAB(B)

1999 Aug 26 7

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

FUNCTIONAL DESCRIPTION

The TEA5757; TEA5759 is an integrated AM/FM stereo
radio circuit including digital tuning and control functions.

The radio

The AM circuit incorporates a double balanced mixer,
a one-pin low-voltage oscillator (up to 30 MHz) and is
designed for distributed selectivity.

The AM input is designed to be connected to the top of
a tuned circuit. AGC controls the IF amplification and for
large signals it lowers the input impedance of the
AM front-end.

The first AM selectivity can be an IF-Tank (IFT) as well as
an IFT combined with a ceramic filter; the second one is
an IFT.

The FM circuit incorporates a tuned RF stage, a double
balanced mixer, a one-pin oscillator and is designed for
distributed IF ceramic filters. The FM quadrature detector
uses a ceramic resonator (or LC).

The PLL stereo decoder incorporates a signal dependent
stereo-blend circuit and a soft-mute circuit.

Tuning

The tuning concept of the Self Tuned Radio (STR) is
based on FUZZY LOGIC: it mimics hand tuning (hand
tuning is a combination of coarse and fine tuning to the
qualitatively best frequency position). As a consequence
the tuning system is very fast.

The tuning algorithm, which is controlled by the sequential
circuit (see Fig.1), is completely integrated; so there are
only a few external components needed.

The bus and the microcontroller can be kept very simple.
The bus only consists of three wires (BUS-CLOCK, DATA
and WRITE-ENABLE). The microcontroller must basically
give two instructions:

• Preset operation

• Search operation.

PRESET OPERATION
Inpreset mode, themicrocontroller has toload information

suchas frequency band,frequency and mono/stereo.This
information has to be sent via the bus to the STR.
The internal algorithm controls the tuning sequence as
follows:

1. The information is loaded into the shift register, the
last-station memory and the counter.

2. The Automatic Frequency Control (AFC) is
switched off.

3. The counter starts counting the frequency and the
tuning voltage is varied until the desired frequency
roughly equals the real frequency.

4. The AFC is then switched on and the counter is
switched off.

5. The real frequency is more precisely tuned to the
desired frequency.

After the AFC has tuned the real frequency to the desired
frequency an in-lock signal can be generated. In order to
get a reliable in-lock signal, there are two parameters
measured: the field strength and the S-curve. The field
strength indicates the strength of the station and by
looking at the S-curve the system can distinguish false
in-locks from real in-locks (false in-locks occur on the
wrong slope of the S-curve).

In the event of fading orpulling thein-lock signal becomes
logic 0 and the synthesizer will be switched on again and
the algorithm will be repeated.

SEARCH OPERATION
During a search operation, the only action the

microcontroller has to take is: sending the desired band
plus the direction and the search sensitivity level to the
STR. The search operation is performed by the charge
pump until an in-lock signal is generated (combination of
measuring the field strength and the S-curve). The AFC
then fine tunes to the station. The frequency belonging to
thefound station willbecounted by the counterand written
into the last-station memory and the shift register of the
counter. At this time the frequency is available in the shift
register and can be read by the microcontroller.
The microcontroller decides whether the frequency is
withinthedesired frequency band. Ifso,thisfrequency can
be stored under a preset and if not, a new search action
should be started.

To ensure that the search function operates correctly
under all conditions the following search sequence must
be applied:

• Store the current frequency in the memory

• Issue the search command

• Wait for data valid and read the new frequency

• If the new frequency is the same as the stored

frequency, issue a pre-set step (e.g. 50 kHz) and start
the search sequence again.

1999 Aug 26 8

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

Description of the bus

The TEA5757; TEA5759radio has abus whichconsists of
three wires, as shown in Table 1.

Table 1 Bus signals

These three signals, together with the mono/stereo pin
(MO/ST; pin 24), communicate with the microcontroller.
The mono/stereo indicator has two functions, which are
controlled by the BUS-CLOCK, as shown in Table 2.

Table 2 Bus-clock functions

The TEA5757; TEA5759 has a 25-bit shift register;
see Table 3 for an explanation of the shift register bits.

If in search mode no transmitter can be found, all
frequency bits of the shift register are set to logic 0.

The bus protocol is depicted in Figs 3 and 4.

SIGNAL DESCRIPTION PIN

BUS-CLOCK software driven clock input 27
DATA data input/output 28
WRITE-ENABLE write/read input 29

BUS-CLOCK MO/ST (PIN 24) RESULT

LOW LOW stereo
LOW HIGH mono
HIGH LOW tuned
HIGH HIGH not tuned

Table 3 Explanation of the shift register bits

Note

1. The output pins 30 and 31 can drive currents up to 5 mA; bits P0.19 and P1.18 control the output voltage of the
control pins P0 (pin 30) and P1 (pin 31):

a) Bit P0.19 LOW sets P0 (pin 30) to LOW.
b) Bit P0.19 HIGH sets P0 (pin 30) to HIGH.
c) Bit P1.18 LOW sets P1 (pin 31) to LOW.
d) Bit P1.18 HIGH sets P1 (pin 31) to HIGH.

BIT DESCRIPTION

LOGIC
STATE

RESULT

S.24 (MSB) search start/end 0 after a search when a station is found or after a preset

1 during the search action

D.23 search up/down 0 indicates if the radio has to search down

1 indicates if the radio has to search up

M.22 mono/stereo 0 stereo is allowed

1 mono is required (radio switched to forced mono)
B0.21 band see Table 4 selects FM/MW/LW/SW band
B1.20
P0.19 port note 1 userprogrammable bits which e.g. can be used as band

switch driver

P1.18
S0.17 search-level of station see Table 5 determines the locking field strength during an

automatic search, automatic store or manual search

S1.16
15 dummy − buffer
F.14 to F.0 (LSB) frequency − determine the tuning frequency of the radio; see Table 6

for the bit values

1999 Aug 26 9

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

Table 4 Truth table for bits B0.21 and B1.20

Table 5 Truth table for bits S1.16 and S0.17

Table 6 Values for bits F.14 to F.0

Notes

1. FM value of the affected oscillators:
a) FM VALUE = FMRF + FMIF (for TEA5757).
b) FM VALUE = FMRF − FMIF (for TEA5759).

2. AM value of the affected oscillators:
AM VALUE = AMRF + AMIF.

B0.21 B1.20 BAND SELECT

00FM
01MW
10LW
11SW

S1.16 S0.17

SIGNAL RECEPTION
FM

(µV)

AM

(µV)

0 0 >5 >28
0 1 >10 >40
1 0 >30 >63
1 1 >150 >1000

BIT BIT VALUEFMVALUE

(1)

(kHz)

AM

VALUE

(2)

(kHz)

F.14 2

14

− 16384

F.13 2

13

102400 8192

F.12 2

12

51200 4096

F.11 2

11

25600 2048

F.10 2

10

12800 1024

F.9 2

9

6400 512

F.8 2

8

3200 256

F.7 2

7

1600 128

F.6 2

6

800 64

F.5 2

5

400 32

F.4 2

4

200 16

F.3 2

3

100 8

F.2 2

2

50 4

F.1 2

1

25 2

F.0 2

0

12.5 1

1999 Aug 26 10

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

READING DATA
While WRITE-ENABLE is LOW data can be read by the

microcontroller. At a rising edge of the BUS-CLOCK, data
is shifted out of the register. This data is available from the
point where the BUS-CLOCK is HIGH until the next rising
edge of the BUS-CLOCK occurs (see Fig.3).

To read the entire shift register 24 clock pulses are
necessary.

WRITING DATA
While WRITE-ENABLE is HIGH the microcontroller can

transmit data to the TEA5757; TEA5759 (hard mute is
active). At a rising edge of the BUS-CLOCK, the register
shifts and accepts one bit into LSB. At clock LOW the
microcontroller writes data (see Fig.4).

To write the entire shift register 25 clock pulses are
necessary.

Fig.3 Read data.

handbook, full pagewidth

WRITE-ENABLE

BUS-CLOCK

DATA

data read

data available

data shiftdata available after search ready

MSB is LOW

MBE817

Fig.4 Write data.

handbook, full pagewidth

data changedata shift

MBE818

WRITE-ENABLE

BUS-CLOCK

DATA

1999 Aug 26 11

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

BUS TIMING

handbook, full pagewidth

t

HIGHtLOW

t

da

V

IH

V

IL

MBE819

WRITE-ENABLE

BUS-CLOCK

DATA

Fig.5 Bus timing.

Table 7 Digital inputs

SYMBOL PARAMETER MIN. MAX. UNIT

Digital inputs

V

IH

HIGH-level input voltage 1.4 − V

V

IL

LOW-level input voltage − 0.6 V

Timing

f

clk

clock input frequency − 300 kHz

t

HIGH

clock HIGH time 1.67 −µs

t

LOW

clock LOW time 1.67 −µs

t

da

shift register available after ‘search ready’ − 14 µs

1999 Aug 26 12

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Charge device model; equivalent to discharging a 200 pF capacitor via a 0 Ω series resistor.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC1

supply voltage 0 13.2 V

P

tot

total power dissipation T

amb

=70°C − 250 mW

T

stg

storage temperature −65 +150 °C

T

amb

ambient temperature −15 +60 °C

T

j

junction temperature −15 +150 °C

V

es

electrostatic handling voltage for all pins note 1 −±200 V

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air 65 K/W

1999 Aug 26 13

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

CHARACTERISTICS

V

CC1

=3V; T

amb

=25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC1

supply voltage 2.5 − 12 V

V

CC2

supply voltage for tuning −−12 V

V

DDD

supply voltage for digital part 2.5 − 12 V

V

tune

tuning voltage 0.7 − V

CC2

− 0.75 V

I

CC2

supply current for tuning in
preset mode (band-end to
band-end)

−−800 µA

f

BUS-CLOCK(max)

maximum BUS-CLOCK
frequency

−−300 kHz

I

CC1

current consumption during
acquisition of V

CC1

AM mode 12 15 18 mA
FM mode 12.5 15.5 18.5 mA

I

DD

current consumption during
acquisition of I

DD

AM mode − 4.8 − mA
FM mode − 5.5 − mA

I

CC1

current consumption after
acquisition of V

CC1

AM mode 12 15 18 mA
FM mode 13 16 19 mA

I

DD

current consumption after
acquisition of I

DD

AM mode − 3.3 − mA
FM mode − 2.7 − mA

t

search

synthesizer auto-search time for
empty band

FM mode −−10 s

t

acq

synthesizer preset acquisition
time between two band limits

FM − 100 − ms
MW − 100 − ms
LW − 200 − ms
SW − 500 − ms

f

band

frequency band range of the
synthesizer

AM mode 0.144 − 30 MHz
FM mode 50 − 150 MHz

∆f

FM

AFC inaccuracy of FM −−1 kHz

∆f

AM

AFC inaccuracy of AM −−100 Hz

I

P0(sink)

sink current of software
programmable output P0

V30=3V 4 6 − mA

I

P1(sink)

sink current of software
programmable output P1

V31=3V 4 6 − mA

I

P0(source)

source current of software
programmable output P0

V30=0V 5 9 − mA

I

P1(source)

source current of software
programmable output P1

V31=0V 5 9 − mA

1999 Aug 26 14

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

AM CHARACTERISTICS

Input frequency fi= 1 MHz; m = 0.3; fm= 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;
V

i1

measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input

level; V

n

refers to pin voltages; V

i(n)

refers to test circuit (see Fig.9); unless otherwise specified.

FM CHARACTERISTICS

Input frequency f

i

= 100 MHz; ∆f = 22.5 kHz; fm= 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;

V

n

refers to pin voltages; V

i(n)

refers to test circuit (see Fig.9); unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

10

AF output voltage Vi1=5mV 364570mV

V

i1

RF sensitivity input voltage (S+N)/N = 26 dB 40 55 70 µV

V

i1

large signal voltage handling capacity m = 0.8; THD ≤ 8% 150 300 − mV

PSRR

power supply ripple rejection

∆V

7

= 100 mV (RMS);

100 Hz; V7= 3.0 V

−−47 − dB

I

i

input current (pin 2) V44= 0.2 V − 0 −µA

C

i

input capacitance (pin 2) V44= 0.2 V −−4pF

G

c

front-end conversion gain V44= 0.2 V 5 10 14 dB

V

44

= 0.9 V −26 −14 0 dB
(S+N)/N signal plus noise-to-noise ratio − 50 − dB
THD total harmonic distortion Vi1=1mV − 0.8 2.0 %

α

450

IF suppression V10=30mV − 56 − dB

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

10

AF output voltage Vi5=1mV 404857mV

V

i5

RF sensitivity input voltage (S+N)/N = 26 dB 1 2 3.8 µV

V

i5

RF limiting sensitivity V10at −3 dB;

V10is 0 dB at Vi5=1mV

0.4 1.2 3.8 µV

V

i5

large signal voltage handling capacity THD < 5% − 500 − mV

PSRR

power supply ripple rejection

∆V

7

= 100 mV (RMS);

100 Hz; V7= 3.0 V

−44 −−dB

G

c

front-end conversion gain

12 18 22 dB

(S+N)/N signal plus noise-to-noise ratio V

i5

=1mV − 62 − dB

THD total harmonic distortion IF filter

SFE10.7MS3A20K-A

− 0.3 0.8 %

V

10

∆V

7

----------





V

10

∆V

7

----------





V

37

V

i5

-------- -





1999 Aug 26 15

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

STEREO DECODER CHARACTERISTICS

V

i3(L + R)

= 155 mV; V

pilot

= 15.5 mV; f = 1 kHz; apply unmodulated RF signal of 100 mV to front-end to set radio to

maximum channel separation; soft mute off (S4 in position A); unless otherwise specified.

TUNING CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

14/15

AF output voltage − 160 − mV

V

pilot(s)

switch to stereo − 812mV

V

pilot(m)

switch to mono 2 5 − mV

V

AF-L/Vi3

MPX voltage gain −1.5 − +1.5 dB

(S+N)/N signal plus noise-to-noise ratio V

pilot

= 15.5 mV (stereo) − 74 − dB

THD total harmonic distortion − 0.5 1.0 %

α

cs

channel separation 26 30 − dB

α

19

carrier and harmonic suppression 19 kHz (200 mV) = 0 dB 27 32 − dB

α

38

38 kHz 16 21 − dB

α stereo-blend V

i5

= 200 µV2230−dB

V

i5

=20µV − 12dB

mute(s) soft mute depth V

i5

=3µV; V14=V

15

−10 − dB

V

i5

=1µV; V14=V

15

−−6−10 dB

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

FM

FM voltage levels α

−3dB

-point at Vi5=2µV
high (auto-store/search) S0 = 1; S1 = 1 60 150 500 µV
medium (auto-store/search) S0 = 0; S1 = 1 10 30 55 µV
low (auto-store/search) S0 = 1; S1 = 0 4 10 20 µV
nominal (preset mode/tuning indication) S0 = 0; S1 = 0 3 5 9 µV

V

AM

AM voltage levels α

−3dB

-point at Vi5=2µV
high (auto-store/search) S0 = 1; S1 = 1 400 1000 2500 µV
medium (auto-store/search) S0 = 0; S1 = 1 50 63 80 µV
low (auto-store/search) S0 = 1; S1 = 0 32 40 50 µV
nominal (preset mode/tuning indication) S0 = 0; S1 = 0 25 28 40 µV

V

AFC(off)

AFC voltage off mode α

−3dB

-point at Vi5=2µV

FM mode − 3 −µV
AM mode − 25 −µV

mute(h) hard mute depth WRITE-ENABLE = HIGH − 60 − dB

1999 Aug 26 16

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

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Fig.6 AM mode.

(1) Audio signal.
(2) Noise.
(3) Harmonic distortion.

handbook, full pagewidth

10

−7

10

−6

10

−5

10

−4

10

−3

10

−2

10

−1

1

(3)

(2)

(1)

0

1

2

3

4

5

6

7

8

9

120100806040200−20

THD

(%)

Vi1 (V)

(dBµV)

10

0

−10

−20

−30

−40

−50

−60

−70

−80

(dB)

MBE853

1999 Aug 26 17

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

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Fig.7 FM mode.

(1) Mono signal.
(2) Noise in mono mode.
(3) Left channel with modulation left.
(4) Right channel with modulation left.
(5) Noise in stereo mode.
(6) Harmonic distortion (measured with ∆f = 75 kHz).

handbook, full pagewidth

10

−7

10

−6

10

−5

10

−4

10

−3

10

−2

10

−1

1

0

1

2

3

4

5

6

7

8

9

12010080604020−20 0

THD

(%)

Vi5 (V)

(dBµV)

10

0

(1)

(2)

(3)

(4)

(5)

(6)

−10

−20

−30

−40

−50

−60

−70

−80

(dB)

MHA115

1999 Aug 26 18

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

INTERNAL CIRCUITRY
Table 8 Equivalent pin circuits and pin voltages

PIN

NO.

PIN

SYMBOL

DC VOLTAGE

(V)

EQUIVALENT CIRCUIT

AM FM

1 RIPPLE 2.1 2.1

2 AM-RFI 0 0

3 FM-RFO 0 0

4 RFGND 0 0
5 FMOSC 0 0

70 pF

17

1

7

1 kΩ

3 kΩ

MBE821

4

2

MBE822

3

42

43

220 Ω

MHA105

5

4

MBE823

1999 Aug 26 19

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

6 AMOSC 0 0

7V

CC1

3.0 3.0

8 TUNE −−

9 VCO 1.3 0.95

10 AFO 0.6 0.7

PIN
NO.

PIN

SYMBOL

DC VOLTAGE

(V)

EQUIVALENT CIRCUIT

AM FM

6

4

MBE824

22

26

8

MBE825

1 kΩ

10 kΩ

9

17

MBE826

5 kΩ

10

17

MBE827

1999 Aug 26 20

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

11 MPXI 1.23 1.23

12 LFI 0.1 0.8

13 MUTE 0.7 0.7

14 AFLO 0.65 0.65

PIN
NO.

PIN

SYMBOL

DC VOLTAGE

(V)

EQUIVALENT CIRCUIT

AM FM

9.5 kΩ

150 kΩ 150 kΩ

11

17

MBE828

4 kΩ

13 kΩ

12

17

MBE829

7 kΩ 50 kΩ

13

17

MBE830

5 kΩ

14

17

MBE831

1999 Aug 26 21

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

15 AFRO 0.65 0.65

16 PILFIL 0.95 0.95

17 IFGND 0 0
18 FMDEM − 1.0

19 AFC

(n)

−−

PIN
NO.

PIN

SYMBOL

DC VOLTAGE

(V)

EQUIVALENT CIRCUIT

AM FM

5 kΩ

15

17

MBE832

10 kΩ

10 kΩ

16

17

MBE833

180 Ω

910 Ω

18

17

MBE834

10 kΩ 10 kΩ

19

MHA106

1999 Aug 26 22

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

20 AFC

(p)

−−

21 FSI −−

22 V

CC2

−−

23 V

DDD

3.0 3.0

24 MO/ST −−

25 XTAL −−

26 DGND 0 0

PIN
NO.

PIN

SYMBOL

DC VOLTAGE

(V)

EQUIVALENT CIRCUIT

AM FM

10 kΩ 10 kΩ

20

MHA107

40 kΩ

12 to 34 kΩ
(dependent on
bits 16 and 17)

21

26

1.4 V

MBE836

24

26

100 Ω

MBE837

50 kΩ50 kΩ50 kΩ

25

26

MBE838

1999 Aug 26 23

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

27 BUS-CLOCK −−

28 DATA −−
29 WRITE-ENABLE −−

30 P0 −−

31 P1 −−

PIN
NO.

PIN

SYMBOL

DC VOLTAGE

(V)

EQUIVALENT CIRCUIT

AM FM

27

26

MBE839

28

29
26

MBE840

100 Ω

50 kΩ

100 kΩ

MHA108

30

23

20 kΩ

100 kΩ

120 Ω

26

MHA109

31

23

20 kΩ

100 kΩ

120 Ω

26

1999 Aug 26 24

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

32 AFC −−

33 FM-IFI2 − 0.73

34 V

STAB(B)

1.4 1.4

35 FM-IFO1 − 0.69

36 AM-IFI/O2 1.4 1.4

PIN
NO.

PIN

SYMBOL

DC VOLTAGE

(V)

EQUIVALENT CIRCUIT

AM FM

MBE842

32

34

20 kΩ

MBE843

33

17

34

2.2 kΩ

140 Ω

6 pF

MBE844

1

34

7

1 kΩ

MBE845

34

35

560 Ω

MBE846

36

17

34

3.6 kΩ 3.6 kΩ

1999 Aug 26 25

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

37 FM-IFI1 − 0.73

38 V

STAB(A)

1.4 1.4

39 FM-MIXER − 1.0

40 AM-MIXER 1.4 1.4

41 AM-IFI1 1.4 1.4

PIN
NO.

PIN

SYMBOL

DC VOLTAGE

(V)

EQUIVALENT CIRCUIT

AM FM

MBE847

37

17

38

1.9 kΩ

140 Ω

6 pF

MBE848

1

38

7

1 kΩ

30 pF

39

680 Ω

MHA110

MBE850

40
38

MBE851

41

17

38

7.5 kΩ

3 kΩ

7.5 kΩ

1999 Aug 26 26

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

42 RFGND 0 0
43 FM-RFI − 0.73

44 AGC 0.1 0.7

PIN
NO.

PIN

SYMBOL

DC VOLTAGE

(V)

EQUIVALENT CIRCUIT

AM FM

3

42

43

220 Ω

MHA105

MBE852

17

44

1 kΩ

1 kΩ

1 kΩ

1999 Aug 26 27

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

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TEST AND APPLICATION INFORMATION

handbook, full pagewidth

100

µF

220
nF

4.7 nF

10
pF

22 pF

100

nF

V

STAB(A)

V

STAB(B)

GND

P1
P0

TUNE

10 Ω

18 kΩ

47 kΩ

47 kΩ

75 kHz

25

(13)

(14)

(14)

23

1

26

31
30

2

V

STAB(A)

V

STAB(A)

V

STAB(B)

V

CC2

L1

18 pF

18 pF

470 pF

BB112

TUNE

TUNE

470 nF

10 nF

10
µF

4.7 µF

L4

L2

6404136

44

822

32

20

19

13

15

14

9

12

24

16

1817

3335

373953

43

TUNE

BB804

BB804

29
38
34

27

28

42

7

21

10

11 4

V

STAB(B)

L5

68 kΩ

2.2 kΩ

10 kΩ

50 kΩ

470 nF

470 nF

100 nF

100 nF

12 nF

12 nF

V

CC1

MO/ST

left output
right output

K3

100 nF

2.2 µF

V

CC1

DATA

BUS-CLOCK

WRITE-ENABLE

V

STAB(B)

K2

L3

470 nF

330 pF

220 nF

18 pF

BB112

22 nF

TEA5757;
TEA5759

MHA113

(4)

K1

(3)

(5)

(7)

(11)

(10)

(8)

L6

(6)

L7

(2)

(9)

10
pF

18 kΩ

TUNE

L8

(1)

(12)

(12)

Fig.8 Application diagram.

(1) L8 = MC117 E523FN-2000242, 38 pF ±3%,

TOKO.

(2) L7 = MC117 E523FN-2000242, 38 pF ±3%,

TOKO.
(3) K1 = SFE10.7MS3, MURATA.
(4) K2 = SFE10.7MS3, MURATA.
(5) K3 = CDA10.7-MG40-A, MURATA.
(6) L6 = 60 nH.
(7) L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
(8) L1 = 250 µH ferroceptor.
(9) L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80, TOKO.

(10) L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90, TOKO.
(11) L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
(12) De-emphasis time constant is 50 µs: C

de-emp

= 12 nF.

De-emphasis time constant is 75 µs: C

de-emp

= 18 nF.

(13) Standard applications: ±30 ppm at 25 °C.

Short wave applications: ±20 ppm at 25 °C.

(14) Alternatively BB512, Siemens or KV1561A, TOKO.

1999 Aug 26 28

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

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handbook, full pagewidth

100

µF

220
nF

220
nF

1 nF

100

nF

V

STAB(A)

V

STAB(B)

GND

P1
P0

10 Ω

47 kΩ

75 kHz

25

23

1

26

31
30

2

V

STAB(B)

V

CC2

18 pF

18 pF

470 pF

BB112

TUNE

TUNE

470 nF

10 nF

10

µF

L4

L2

6

40

41

36

44

822

32

20

19

13

15

14

9

12

24

16

1817

3335

3739

S5

B
A

53

43

BB804

29
38
34

27

28

42

7

21

10

11 4

V

STAB(B)

L5

K3

100 nF

V

CC1

DATA

BUS-CLOCK

WRITE-ENABLE

V

STAB(B)

V

STAB(A)

K2

470 nF

TEA5757;
TEA5759

MHA114

(4)

K1

(3)

(5)

(11)

(11)

(7)

(10)

(8)

680 pF

50 Ω 43 Ω

6.8 Ω

(6)

(12)

1 MHz

V

i1

L1

50 Ω

3
kΩ

50 Ω

50 Ω

5 kΩ

(9)

(13)

V

STAB(A)

V

i2

V

i3

450 kHz

MPX

330 pF

220 nF

S3

S2

A

A

B

B

AS1B

L3

4.7 µF

68 kΩ

8.2 kΩ

2.2 kΩ

10 kΩ

50 kΩ

470 nF

470 nF

100 nF

100 nF

12
nF

12
nF

V

CC1

MO/ST

left
output

right
output

2.2 µF

BA

S4

50 Ω

50 Ω

330 Ω

10.7
MHz

1 nF

V

i4

50 Ω 27 Ω

91 Ω

560 Ω

100 MHz

V

i5

10
pF

18 kΩ

TUNE

L7

(2)

BB804

10
pF

18 kΩ

TUNE

L8

(1)

Fig.9 Test circuit.

(1) L8 = MC117 E523FN-2000242, 38 pF ±3%,

TOKO.
(2) L7 = MC117 E523FN-2000242, 38 pF ±3%,

TOKO.
(3) K1 = SFE10.7MS3, MURATA.
(4) K2 = SFE10.7MS3, MURATA.
(5) K3 = CDA10.7-MG40-A, MURATA.
(6) L1 = 22281−30091.
(7) L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
(8) L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80, TOKO.
(9) L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90, TOKO.
(10) L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.

(11) De-emphasis time constant is 50 µs: C

de-emp

=12nF.

De-emphasis time constant is 75 µs: C

de-emp

=18nF.

(12) Standard applications: ±30 ppm at 25 °C.

Short wave applications: ±20 ppm at 25 °C.

(13) Alternatively BB512, Siemens or KV1561A, TOKO.

1999 Aug 26 29

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PACKAGE OUTLINE

UNIT A1A2A3bpcE

(1)

eH

E

LL

p

Zywv θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

0.25

0.05

1.85

1.65

0.25

0.40

0.20

0.25

0.14

10.1

9.9

0.8 1.3

12.9

12.3

1.2

0.8

10

0

o

o

0.15 0.10.15

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

0.95

0.55

SOT307-2

95-02-04
97-08-01

D

(1) (1)(1)

10.1

9.9

H

D

12.9

12.3

E

Z

1.2

0.8

D

e

E

B

11

c

E

H

D

Z

D

A

Z

E

e

v M

A

X

1

44

34

33 23

22

12

y

θ

A

1

A

L

p

detail X

L

(A )

3

A

2

pin 1 index

D

H

v M

B

b

p

b

p

w M

w M

0 2.5 5 mm

scale

QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm

SOT307-2

A

max.

2.10

1999 Aug 26 30

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

SOLDERING
Introduction to soldering surface mount packages

Thistext gives a verybriefinsightto a complextechnology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages.Wave soldering isnot always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit boardbyscreen printing, stencillingor
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating,soldering andcooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
forsurfacemount devices (SMDs) orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswith leads on foursides,thefootprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement andbefore soldering,the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

1999 Aug 26 31

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

Suitability of surface mount IC packages for wave and reflow soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP andTSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

PACKAGE

SOLDERING METHOD

WAVE REFLOW

(1)

BGA, SQFP not suitable suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable

(2)

suitable

PLCC

(3)

, SO, SOJ suitable suitable

LQFP, QFP, TQFP not recommended

(3)(4)

suitable

SSOP, TSSOP, VSO not recommended

(5)

suitable

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Internet: http://www.semiconductors.philips.com

1999

67

Philips Semiconductors – a w orldwide compan y

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PTPhilips Development Corporation, SemiconductorsDivision,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

Printed in The Netherlands 545002/03/pp32 Date of release: 1999 Aug 26 Document order number: 9397 750 06058