Page 1
DATA SH EET
Product specification
File under Integrated Circuits, IC01
March 1994
INTEGRATED CIRCUITS
TEA5710; TEA5710T
AM/FM radio receiver circuit
Page 2
March 1994 2
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
FEATURES
• Wide supply voltage range: 2.0 to 12 V
• Low current consumption: 7.5 mA at AM, 9.0 mA at FM
• High selectivity with distributed IF gain
• LED driver for tuning indication
• High input sensitivity: 1.6 mV/m (AM), 2.0µV (FM) for 26
dB S/N
• Good strong signal behaviour: 10 V/m at AM, 500 mV at
FM
• Low output distortion: 0.8% at AM, 0.3% at FM
• Designed for simple and reliable PC-board layout
• High impedance MOSFET input on AM
APPLICATIONS
• Portable AM/FM radio
• Clock radio
• Personal headphone radio
DESCRIPTION
The TEA5710 is a high performance Bimos IC for use in
AM/FM radios. All necessary functions are integrated:
from AM and FM front-end to detector output stages.
QUICK REFERENCE DATA
Conditions AM: f
i
= 1 MHz; m = 0.3; fm = 1 kHz; VP= 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A,
unless otherwise specified. Conditions FM: f
i
= 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP= 3.0 V; measured in Fig.4 with
S1 in position B and S2 in position A, unless otherwise specified.
ORDERING INFORMATION
Notes
1. SOT234-1; 1996 August 27.
2. SOT137-1; 1996 August 27.
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
P
positive supply voltage 2.0 − 12 V
I
P
supply current
in AM mode 5.6 7.5 9.9 mA
in FM mode 7.3 9.0 11.2 mA
T
amb
operating ambient temperature range −15 −+60 °C
AM performance
V
in1
RF sensitivity 40 55 70 µV
V
13
AF output voltage 36 45 70 mV
THD total harmonic distortion − 0.8 2.0 %
FM performance
V
in3
RF sensitivity 1.0 2.0 3.8 µV
V
13
AF output voltage 47 58 69 mV
THD total harmonic distortion − 0.3 0.8 %
EXTENDED TYPE
NUMBER
PACKAGE
PINS PIN POSITION MATERIAL CODE
TEA5710 24 SDIL plastic SOT234AG
(1)
TEA5710T 24 SO24L plastic SOT137A
(2)
Page 3
March 1994 3
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
Fig.1 Block diagram.
handbook, full pagewidth
MGE106
FM-RFIFM-RF
O
FM-MIXER
FM
FRONT-END
FM
MIXER
AM
FRONT-END
FM-IF1IFM-RF1
O
FM
IF 1
FM-IF2
I
FM
IF 2
FM-DEM
FM
DETECTOR
AM
MIXER
FM
OSCILLATOR
AM
OSCILLATOR
AM/FM
INDICATOR
AM/FM
SWITCH
AM
DETECTOR
STABILIZER
24
1 20 4 6 8 10 12
18
16
22
5
9
11
17
23
3
2 719
13
15
21
14
AM-IF
AGC
FM
AM
RFGND
AM/FM
IND
AF
AM-AGC/
FM-AFC
FM-OSC
V
P
RIPPLE
VSTAB
A
VSTAB
B
IFGND
AM-OSC
AM-RF
I
AM-IF1IAM-IF2
I/O
AM-MIXER SUBGND
TEA5710
TEA5710T
Page 4
March 1994 4
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PINNING
SYMBOL PIN DESCRIPTION
FM-RF
I
1 FM-RF aerial input (input impedance typ. 50 Ω)
AM-IF1
I
2 input from IFT or ceramic filter (input impedance typ. 3 kΩ)
AM-MIXER 3 open-collector output to IFT
FM-MIXER 4 output to ceramic IF filter (output impedance typ. 330 Ω)
VSTAB
A
5 stabilized internal supply voltage (A)
FM-IF1
I
6 first FM-IF input (input impedance typ. 330 Ω)
AM-IF2
I/O
7 input/output to IFT; output: current source
FM-IF1
O
8 first FM-IF output (output impedance typ. 330 Ω)
VSTAB
B
9 stabilized internal supply voltage (B)
FM-IF2
I
10 second FM-IF input (input impedance typ. 330 Ω)
IFGND 11 ground of IF and detector stages
FM-DEM 12 ceramic discriminator pin
AF 13 audio output (output impedance typ. 5 kΩ)
AM/FM 14 switch terminal: open for AM; ground for FM
IND 15 field-strength dependent indicator
V
P
16 positive supply voltage
AM-OSC 17 parallel tuned AM-OSC circuit to ground
FM-OSC 18 parallel tuned FM-OSC circuit to ground
SUBGND 19 substrate and RF ground
FM-RF
O
20 parallel tuned FM-RF circuit to ground
AM-AGC/FM-AFC 21 AGC/AFC capacitor pin
RIPPLE 22 ripple capacitor pin
AM-RF
I
23 parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF)
RFGND 24 FM-RF ground
Page 5
March 1994 5
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
Fig.2 Pin configuration TEA5710.
handbook, halfpage
TDA5710
MGE104
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
FM-RF
I
AM-IF
I
AM-MIXER
FM-MIXER
VSTAB
A
FM-IF1
I
AM-IF2
I/O
FM-IF1
O
VSTAB
B
FM-IF2
I
IFGND
FM-DEM
RFGND
AM-RF
I
RIPPLE
AM-AGC/FM-AFC
SUBGND
FM-OSC
FM-RF
O
AM-OSC
V
P
IND
AM/FM
AF
Fig.3 Pin configuration TEA5710T.
handbook, halfpage
TDA5710T
MGE105
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
FM-RF
I
AM-IF
I
AM-MIXER
FM-MIXER
VSTAB
A
FM-IF1
I
AM-IF2
I/O
FM-IF1
O
VSTAB
B
FM-IF2
I
IFGND
FM-DEM
RFGND
AM-RF
I
RIPPLE
AM-AGC/FM-AFC
SUBGND
FM-OSC
FM-RF
O
AM-OSC
V
P
IND
AM/FM
AF
FUNCTIONAL DESCRIPTION
The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage
can go down temporarily to 1.8 V without any loss in performance.
The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength
dependent indicator output and is designed for distributed selectivity.
The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large
signals it lowers the input impedance.
The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT.
The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator
output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator.
Page 6
March 1994 6
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCE
CIRCUIT DESIGN DATA
SYMBOL PARAMETER MIN. MAX. UNIT
V
P
positive supply voltage 0 12 V
T
stg
storage temperature range −55 +150 °C
T
amb
operating ambient temperature range −15 +60 °C
T
j
junction temperature range −15 +150 °C
SYMBOL PARAMETER VALUE UNIT
R
th j-a
from junction to ambient
for SDIL version TEA5710 69 K/W
for SO24L version TEA5710T 76 K/W
PIN NO. PIN SYMBOL
DC PIN VOLTAGE (V)
EQUIVALENT CIRCUIT
AM FM
1 FM-RF
I
− 0.73
2
AM-IF1
I
input
1.4 1.4
MGE114
220 Ω
20
24
1
MGE115
3 kΩ
2
5
11
Page 7
March 1994 7
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
3
AM-MIXER
output
1.4 1.4
4
FM-MIXER
output
− 1.0
5 VSTAB
A
1.4 1.4
6
FM-IF
I
input
− 0.73
PIN NO. PIN SYMBOL
DC PIN VOLTAGE (V)
EQUIVALENT CIRCUIT
AM FM
MGE116
5
3
MGE117
680 Ω
4
MGE118
16
22
5
MGE119
2.7
kΩ
120 Ω
6
5
11
Page 8
March 1994 8
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
7
AM-IF2
I/O
input/output
1.4 1.4
8
FM-IF1
O
output
− 0.69
9 VSTAB
B
1.4 1.4
10
FM-IF2
I
input
− 0.73
11 IFGND 0 0
PIN NO. PIN SYMBOL
DC PIN VOLTAGE (V)
EQUIVALENT CIRCUIT
AM FM
MGE120
7
9
11
MGE121
560 Ω
9
8
MGE122
16
22
9
MGE123
2.2
kΩ
180 Ω
10
9
11
Page 9
March 1994 9
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
12 FM-DEM − 1.0
13
AF
output
0.6 0.7
14
AM/FM
switch
1.3 0
15 IND 3.0 3.0
16 V
P
3.0 3.0
17 AM-OSC 0 0
PIN NO. PIN SYMBOL
DC PIN VOLTAGE (V)
EQUIVALENT CIRCUIT
AM FM
MGE124
12
11
180 Ω
910 Ω
MGE125
25 kΩ
5 kΩ
13
11
MGE126
14
MGE127
15
11
MGE128
17
19
Page 10
March 1994 10
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
18 FM-OSC 0 0
19 SUBGND 0 0
20 FM-RF
O
00
21
AM-AGC/
FM-AFC
0.1 0.7
PIN NO. PIN SYMBOL
DC PIN VOLTAGE (V)
EQUIVALENT CIRCUIT
AM FM
MGE129
10 kΩ
18
21
19
MGE114
220 Ω
20
24
1
MGE130
21
11
Page 11
March 1994 11
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
22 RIPPLE 2.1 2.1
23 AM-RF
I
00
24 RFGND 0 0
PIN NO. PIN SYMBOL
DC PIN VOLTAGE (V)
EQUIVALENT CIRCUIT
AM FM
MGE131
22
16
11
MGE132
19
23
MGE114
220 Ω
20
24
1
Page 12
March 1994 12
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
AM CHARACTERISTICS
f
i
= 1 MHz; m = 0.3; fm = 1 kHz; VP= 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless
otherwise specified.
FM CHARACTERISTICS
f
i
= 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
P
supply current no input signal 5.6 7.5 9.9 mA
C
i
input capacitance V21 = 0.2 V − 3 − pF
G
c
front-end conversion gain V21 = 0.2 V 1.8 3.3 5.0
V
in1
RF sensitivity S/N = 26 dB 40 55 70 µV
V
in2
IF sensitivity V13 = 30 mV; 0.13 0.2 0.45 mV
S
1
in position A
V
13
AF output voltage V
in2
= 3.16 mV; 36 45 70 mV
S
1
in position A
THD total harmonic distortion V
in1
= 1 mV − 0.8 2.0 %
V
in1
large signal handling m = 0.8; 150 300 − mV
THD ≤ 8%
I
IND
indicator current V
in2
= 100 mV; 2 3.5 6 mA
S
1
in position A
I
INDOFF
indicator OFF current V
in2
= 0 V; − 010µA
S
1
in position A
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
P
supply current no input signal 7.3 9.0 11.2 mA
V
in3
RF limiting sensitivity V13 = −3 dB 0.4 1.2 3.8 µV
V
in3
RF sensitivity S/N = 26 dB 1.0 2.0 3.8 µV
V
6/Vin3
front-end voltage gain V
in3
≤ 1 mV;
including ceramic
filter K1
12 18 22 dB
V
in4
IF sensitivity S2 in position B;
V13 = −3 dB
− 20 30 µV
V
13
AF output voltage V
in3
= 1 mV 47 58 69 mV
THD total harmonic distortion V
in3
= 1 mV;
∆f = 22.5 kHz
− 0.3 0.8 %
V
in3
large signal handling THD ≤ 5% − 500 − mV
I
IND
indicator current V
in4
= 100 mV;
S2in position B
2 3.5 6 mA
I
INDOFF
indicator OFF current V
in4
= 0 V;
S2 in position B
− 010µA
Page 13
March 1994 13
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
handbook, full pagewidth
MGE108
18
pF
L2
22
pF
FM-OSCFM-RF
L3
8.2
pF
AM-OSC
L4
FM AM
AF
V
P
100
µF
L8
40 µH
10
µF
10
nF
10
nF
CQS54
24 23 22 21 20 19 18 17 16 15 14 13
12
L5
to pin 5
L6
K1 K2
10.7
MHz
3456789101112
TEA5710
TEA5710T
V
p
K3
AB
AB
S2
S1
100
MHz
468
kHz
220nF
3 kΩ
1 nF
50 Ω 50 Ω
330 Ω
560 Ω 91 Ω
27 Ω
(50 Ω)
(50 Ω)
R
g
(50 Ω)
R
g
R
g
V
in2
V
in4
V
in3
1
MHz
6.8 Ω 680 pF
43 Ω
(50 Ω)
R
g
V
in1
Fig.4 Test circuit.
Page 14
March 1994 14
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
APPLICATION INFORMATION
handbook, full pagewidth
MGE107
P1
4.7 kΩ
HP
32 Ω
R1
10 Ω
R2
10 Ω
C6
18
pF
2
1
L2
Cc
20
pF
CTc
8 pF
CTd
8 pF
C7
22
pF
2
1
FM-OSCFM-RFI
Ca
140
pF
Cb
20
pF
CTa
8 pF
CTb
8 pF
1
2
L1
AM-RFI
L3
Cd
80
pF
C8
8.2
pF
1
3
AM-OSC
L4
FM AM
ON
OFF
3V
V
P
C2
100 µF
C10
100
µF
C11
100 µF
C3
10 µF
C4
10 nF
C5
10
nF
C9
100 nF
LED
CQS54
24 23 22 21 20 19 18 17 16 15 14 13
AF
12
6
1
1
3
2
4
L5
L6K1 K2
K3
SFE10.7MS3 SFE10.7MS2
CDA10.7MC40
3
2
34
8765
123456789101112
TEA5710
TEA5710T
TDA7050T
V
P
CO
22
pF
L7
60 nH
C1
4.7
nF
Fig.5 Application circuit of TEA5710 (AM: 522 to 1611 kHz, FM: 87.5 to 108 MHz) with stereo headphone amplifier TDA7050T.
Page 15
March 1994 15
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
Fig.6 Printed-circuit board layout (track side) for application circuit of Fig.5.
handbook, full pagewidth
MGE109
Page 16
March 1994 16
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
Fig.7 Printed-circuit board layout (component side) for application circuit of Fig.5.
handbook, full pagewidth
ANT GND 100MHz
C12
C1
680
C2
R2
R3
L5
4.7
560
27
91
1
C4
C3
K1
C11
C7
6.8
43
L2
ANT
F
M
A
M
OSC
HP
PLUG
TEA5710
L6
K2
K3
C8
C5
C6
<FM AM>
LED
L3
P1
1.5 V
1.5 V
C10
GND AF
L4
C9
1MHz
L1
40 µH
MGE110
Page 17
March 1994 17
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
Components for Figs 4 and 5
Coils
L1 AM-AERIAL ferroceptor
length = 6 cm
L1-2 = 625 µH
N1-2 = 105 turns
L2 FM-RF L1-2 = 66 nH
N1-2 = 2.5 turns
unloaded Q = 150
TOKO type S18
TOKO no. 301SS-0200
L3 FM-OSC L1-2 = 40 nH
N1-2 = 1.5 turns
unloaded Q = 150
TOKO type S18
TOKO no. 301SS-0100
L4 AM-OSC L1-3 = 270 µH
N1-2 = 18
N2-3 = 70
unloaded Q = 100
wire diameter 0.07 mm
TOKO type 7P
material TOKO 7BRS
L5 AM-IF1 L1-3 = 625 µH
N1-2 = 17 turns
N2-3 = 141 turns
N4-6 = 10 turns
C1-3 = 180 pF
unloaded Q = 90
wire diameter 0.07 mm
TOKO type 7P
material TOKO 7MCS
L6 AM-IF2 L1-3 = 625 µH
N1-2 = 28 turns
N2-3 = 130 turns
C1-3 = 180 pF
unloaded Q = 90
wire diameter 0.07 mm
TOKO type 7P
material TOKO 7MCS
MGE133
L4
3
2
1
S
MGE134
3
2
1
4
6
L5
S
S
MGE135
3
2
1
L6
S
Page 18
March 1994 18
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
Application notes
1. Short circuiting: all pins are short-circuit proof except pin 1 (FM-RFI) with respect to the supply voltage pin.
2. Tuning indicator (at pin 15, IND): connect either a tuning indicator (e.g. a LED) between this pin and the supply
voltage (pin 16) or connect the pin IND to ground.
3. For an example of PC-board layout: see Figs 6 and 7.
L7 FM-AERIAL print-coil
L1-2 = 60 nH
N1-2 = 2.5 turns
L8 AM-RF test circuit only:
L1-3 = 40 µH
N1-3 = 34 turns
unloaded Q = 85
wire diameter 0.09 mm
TOKO type 7P
material TOKO 7BRS
Ceramic filters
K1 FM-IF1 Murata SFE 10.7 MS 3
K2 FM-IF2 Murata SFE 10.7 MS 2
K3 FM-DET Murata CDA 10.7 MC 40
Capacitors
C1 VARICON AM: 140/82 pF
FM: 2 × 20 pF
trimmer: 4 × 8 pF
TOKO type no. HU-22124
MGE136
L8
3
1
S
Page 19
March 1994 19
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
Fig.8 Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current
(level) as a function of RF input voltage (V
in1
; f = 1 kHz). Measured in test circuit of Fig.4 with VP = 3.0 V.
handbook, full pagewidth
0
10
−1
10
2
10
3
10
4
10
5
V
in1
(µV)
10
6
110
V
AF
(dB)
0 dB = 45 mV
MGE111
−10
−20
−30
−40
−50
−60
−70
level (mA)
THD (%)
7
6
5
4
3
2
1
0
noise
m = 0
signal
m = 0.3
THD
m = 0.3
level
Page 20
March 1994 20
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
Fig.9 Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current
(level) as a function of field-strength (f = 1 kHz). Measured at 1 MHz in application circuit of Fig.5 with
VP=3V.
handbook, full pagewidth
0
110
2
10
3
10
4
10
5
field-strength (µV)
10
6
10
7
10
V
AF
(dB)
0 dB = 45 mV
MGE112
−10
−20
−30
−40
−50
−60
−70
level (mA)
THD (%)
7
6
5
4
3
2
1
0
noise
m = 0
signal
m = 0.3
THD
m = 0.3
level
Page 21
March 1994 21
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
Fig.10 Typical FM audio output voltage (VAF; signal), noise, THD and indicator current (ind) as a function of RF
input voltage (V
in3
; df = 22.5 kHz). Measured in test circuit of Fig.4 at VP = 3 V.
handbook, full pagewidth
0
10
−1
10
2
10
3
10
4
10
5
V
in3
(µV)
10
6
110
V
AF
(dB)
0 dB = 65 mV
MGE113
−10
−20
−30
−40
−50
−60
−70
ind (mA)
THD (%)
7
6
5
4
3
2
1
0
THD
22.5 kHz
signal
noise
ind
Page 22
March 1994 22
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PACKAGE OUTLINES
UNIT b
1
cEe M
H
L
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
DIMENSIONS (mm are the original dimensions)
SOT234-1
92-11-17
95-02-04
b
max.
w
M
E
e
1
1.3
0.8
0.53
0.40
0.32
0.23
22.3
21.4
9.1
8.7
3.2
2.8
0.181.778 10.16
10.7
10.2
12.2
10.5
1.6
4.7 0.51 3.8
M
H
c
(e )
1
M
E
A
L
seating plane
A
1
w M
b
1
e
D
A
2
Z
24
1
13
12
b
E
pin 1 index
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
(1) (1)
D
(1)
Z
A
max.
12
A
min.
A
max.
SDIP24: plastic shrink dual in-line package; 24 leads (400 mil)
SOT234-1
Page 23
March 1994 23
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
UNIT
A
max.
A
1
A2A3b
p
cD
(1)E(1) (1)
eHELLpQ
Z
ywv θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
inches
2.65
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
15.6
15.2
7.6
7.4
1.27
10.65
10.00
1.1
1.0
0.9
0.4
8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
1.1
0.4
SOT137-1
X
12
24
w M
θ
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
c
L
v M
A
13
(A )
3
A
y
0.25
075E05 MS-013AD
pin 1 index
0.10
0.012
0.004
0.096
0.089
0.019
0.014
0.013
0.009
0.61
0.60
0.30
0.29
0.050
1.4
0.055
0.42
0.39
0.043
0.039
0.035
0.016
0.01
0.25
0.01
0.004
0.043
0.016
0.01
92-11-17
95-01-24
e
1
0 5 10 mm
scale
SO24: plastic small outline package; 24 leads; body width 7.5 mm
SOT137-1
Page 24
March 1994 24
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
(order code 9398 652 90011).
SDIP
S
OLDERING BY DIPPING OR BY WAVE
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg max
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
R
EPAIRING SOLDERED JOINTS
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
W
AVE SOLDERING
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
R
EPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Page 25
March 1994 25
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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