Datasheet TEA1113T-C1, TEA1113-C1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1996 Feb 08
File under Integrated Circuits, IC03

1997 Mar 27

INTEGRATED CIRCUITS

TEA1113

Low voltage versatile telephone
transmission circuit with dialler
interface

1997 Mar 27 2

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

FEATURES

• Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)

• Voltage regulator with adjustable DC voltage

• Provides a supply for external circuits

• Symmetrical high impedance inputs (64 kΩ) for

dynamic, magnetic or piezo-electric microphones

• Asymmetrical high impedance input (32 kΩ) for electret
microphones

• DTMF input with confidence tone

•

MUTE input for pulse or DTMF dialling

• Receiving amplifier for dynamic, magnetic or
piezo-electric earpieces

• Dynamic limitation in the transmit direction to prevent
distortion of the transmit line and sidetone signals

• AGC line loss compensation for microphone and
earpiece amplifiers

• LED on-hook/off-hook status indication

• Microphone mute function available with switch.

APPLICATION

• Line powered telephone sets, cordless telephones, fax
machines and answering machines.

GENERAL DESCRIPTION

The TEA1113 is a bipolar integrated circuit that performs
all speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between speech and dialling. The IC operates at a line
voltage down to 1.6 V DC (with reduced performance) to
facilitate the use of telephone sets connected in parallel.

A current (proportional to the line current and internally
limited to 19.5 mA) is available to drive an LED which
indicates the on-hook/off-hook status.

The transmit signal on the line is dynamically limited to
prevent distortion at high transmit levels for both the
sending line and sidetone signals. The microphone
amplifier can be disabled during speech condition by
means of a microphone mute function.

All statements and values refer to all versions unless
otherwise specified.

QUICK REFERENCE DATA

I

line

= 15 mA; VEE=0V; R

SLPE

=20Ω; C

DLS

= 470 nF; AGC pin connected to VEE; Z

line

= 600 Ω; f = 1 kHz;

T

amb

=25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

line current operating range normal operation 11 − 140 mA

with reduced performance 1 − 11 mA

I

LED(max)

maximum supply current available I

line

=18 mA − 0.6 − mA

I

line

>76mA − 19.5 − mA

V

LN

DC line voltage 3.7 4.0 4.3 V

V

LN(max)(p-p)

maximum output voltage swing
(peak-to-peak value)

3.8 4.65 − V

I

CC

internal current consumption VCC= 3.2 V − 1.3 1.6 mA

V

CC

supply voltage for peripherals Ip= 0 mA 2.8 3.2 − V

G

vtrx

typical voltage gain range

microphone amplifier V

MIC

= 2 mV (RMS) 38.8 − 51.8 dB

receiving amplifier V

IR

= 4 mV (RMS) 19.3 − 31.3 dB

∆G

vtrx

gain control range for microphone and
receiving amplifiers with respect to
I

line

=15mA

I

line

=85mA − 5.8 − dB

∆G

vtxm

microphone amplifier gain reduction − 80 − dB

1997 Mar 27 3

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

ORDERING INFORMATION

BLOCK DIAGRAM

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TEA1113 DIP16

plastic dual in-line package; 16 leads (300 mil)

SOT38-4

TEA1113T SO16

plastic small outline package; 16 leads; body width 3.9 mm

SOT109-1

Fig.1 Block diagram.

handbook, full pagewidth

ATT.

DTMF

V− I

DYNAMIC

LIMITER

AGC

CIRCUIT

CURRENT

REFERENCE

LOW VOLTAGE

CIRCUIT

LED

DRIVER

IR

MIC+

MIC−

DLS/MMUTE

V

EE

I

LED

AGC

SLPE

TEA1113

5

4

231013

11

6

12

15 14 8

16

1

7

9

GAS

GAR

QR

LN

V

CC

REG

MUTE

V− I

V− I

V− I

MBG018

1997 Mar 27 4

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

PINNING

SYMBOL PIN DESCRIPTION

LN 1 positive line terminal
SLPE 2 slope (DC resistance) adjustment
I

LED

3 available output current to drive an

LED
REG 4 line voltage regulator decoupling
GAS 5 sending gain adjustment
DLS/

MMUTE

6 dynamic limiter timing adjustment

and microphone mute input
DTMF 7 dual-tone multi-frequency input
MUTE 8 mute input to select speech or

dialling mode (active LOW)
IR 9 receiving amplifier input
AGC 10 automatic gain control - line loss

compensation
MIC− 11 inverting microphone amplifier

input
MIC+ 12 non-inverting microphone amplifier

input
V

EE

13 negative line terminal
QR 14 receiving amplifier output
GAR 15 receive gain adjustment
V

CC

16 supply voltage for speech circuit

and peripherals

Fig.2 Pin configuration.

handbook, halfpage

TEA1113

MBG015

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

V

CC

GAR
QR
V

EE

MIC+
MIC−
AGC
IR

LN

SLPE

I

LED

REG

GAS

DLS/MMUTE

DTMF
MUTE

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supply (pins LN, SLPE, V

CC

and REG)

The supply for the TEA1113 and its peripherals is obtained
from the telephone line.

The ICs generate a stabilized reference voltage (V

ref

)
between pins LN and SLPE. This reference voltage is
equal to 3.7 V, is temperature compensated and can be
adjusted by means of an external resistor (RVA). It can be
increased by connecting the RVA resistor between
pins REG and SLPE, or decreased by connecting the R

VA

resistor between pins REG and LN. The voltage at
pin REG is used by the internal regulator to generate the
stabilized reference voltage and is decoupled by a
capacitor (C

REG

) which is connected to VEE. This
capacitor, converted into an equivalent inductance (see
Section “Set impedance”), realizes the set impedance
conversion from its DC value (R

SLPE

) to its AC value

(R

CC

in the audio-frequency range). The voltage at pin
SLPE is proportional to the line current. Figure 3 illustrates
the supply configuration.

The IC regulates the line voltage at the pin LN, and it can
be calculated as follows:

I

line

: line current

ICC: current consumption of the IC
Ip: supply current for peripheral circuits
I*: current consumed between LN and V

EE

I

LED

: supply current for the LED component

Ish: the excess line current shunted to SLPE (and VEE)
via LN.

V

LN

V

refRSLPEISLPE

×+=

I

SLPEIlineICC

– Ip– I∗– I

LED

I+

sh

==

1997 Mar 27 5

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

The preferred value for R

SLPE

is 20 Ω. Changing R

SLPE

will affect more than the DC characteristics; it also influences the
microphone and DTMF gains, the LED supply current characteristic, the gain control characteristics, the sidetone level
and the maximum output swing on the line.

Fig.3 Supply configuration.

handbook, full pagewidth

LED

DRIVER

I

sh

I

SLPE

REG

LN

SLPE

V

EE

V

CC

R

CC

C

VCC

I

CC

C

REG

R

SLPE

V

exch

R

exch

I

LED

I

LED

I

line

R

line

TEA1113

I

*

I

p

peripheral

circuits

100 µF

4.7 µF

20 Ω

619 Ω

MBG019

from preamp

Fig.4 Reference voltage adjustment by a RVA resistor.

(1) RVA between REG and SLPE.
(2) No RVA.
(3) RVA between REG and LN.

handbook, halfpage

5.5

V

ref

(V)

2.5

3.5

4.5

RVA (Ω)

10

4

MGD188

10

5

10

6

10

7

(1)

(2)

(3)

1997 Mar 27 6

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

The internal circuitry of the TEA1113 is supplied from
pin VCC. This voltage supply is derived from the line
voltage by means of a resistor (RCC) and must be
decoupled by a capacitor C

VCC

. It may also be used to
supply peripheral circuits such as dialling or control
circuits. The VCC voltage depends on the current
consumed by the IC and the peripheral circuits as shown
by the formula (see also Figs 5 and 6). R

CCint

is the internal

impedance of the voltage supply point, and I

rec

is the
current consumed by the output stage of the earpiece
amplifier.

The DC line current flowing into the set is determined by
the exchange supply voltage (V

exch

), the feeding bridge

resistance (R

exch

), the DC resistance of the telephone line

(R

line

) and the reference voltage (V

ref

). With line currents
below 8 mA, the internal reference voltage (generating
V

ref

) is automatically adjusted to a lower value. This means
that more sets can operate in parallel with DC line voltages
(excluding the polarity guard) down to an absolute
minimum voltage of 1.6 V. At currents below 8 mA, the
circuit has limited sending and receiving levels. This is
called the low voltage area.

V

CC

V

CCORCCintIpIrec

–()×–=

V

CCO

VLNR

CCICC

×–=

handbook, halfpage

PERIPHERAL

CIRCUIT

I

P

I

rec

R

CCintVCC

V

EE

V

CCO

MBE792

Fig.5 VCC voltage supply for peripherals.

Set impedance

In the audio frequency range, the dynamic impedance is
mainly determined by the RCC resistor. The equivalent
impedance of the circuits is illustrated in Fig.7.

LED supply (pin I

LED

)

The TEA1113 gives an on-hook/off-hook status indication.
This is achieved by a current made available to drive an
LED connected between pins I

LED

and LN. In the low
voltage area, which corresponds to low line current
conditions, no current is available for this LED. For line
currents higher than a threshold current, the I

LED

current
increases proportionally to the line current (with a ratio of
one third).The I

LED

current is internally limited to 19.5 mA

(see Fig.8).
For 17 mA < I

line

< 77 mA:

This LED driver is referenced to SLPE. Consequently, all
the I

LED

supply current will flow through the R

SLPE

resistor.
The AGC characteristics are not disturbed (see Fig.3 for
the supply configuration).

Microphone amplifier (pins MIC+, MIC− and GAS)

The TEA1113 has symmetrical microphone inputs.
The input impedance between pins MIC+ and MIC− is
64 kΩ (2 × 32 kΩ). The voltage gain from pins MIC+/MIC−
to pin LN is set to 51.8 dB (typ). The gain can be
decreased by connecting an external resistor R

GAS

between pins GAS and REG. The adjustment range is
13 dB. A capacitor C

GAS

connected between pins GAS
and REG can be used to provide a first-order low-pass
filter. The cut-off frequency corresponds to the time
constant C

GAS

× (R

GASint

// R

GAS

). R

GASint

is the internal

resistor which sets the gain with a typical value of 69 kΩ.
Automatic gain control is provided on this amplifier for line

loss compensation.

Dynamic limiter and microphone mute
(pin DLS/

MMUTE)

The dynamic limiter only acts on the microphone channel,
this is to prevent clipping of the line signal. To prevent
distortion, the microphone gain is rapidly reduced when
peaks on the line signal exceed an internally determined
threshold level or when the current in the transmit output
stage is insufficient. The time in which the gain reduction
is realized is very short (attack time). The microphone
channel stays in the reduced gain condition until the peaks

I

LED

I

line

17–

3

----------------------

=

1997 Mar 27 7

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

on the line signal remain below the threshold level.
The microphone gain then returns to its nominal value after
a time determined by the capacitor C

DLS

(release time).

The maximum output swing on the line depends on the DC
voltage setting (V

ref

). The internal threshold level is

automatically adapted.
A LOW level on pin DLS/MMUTE inhibits the microphone

inputs MIC+ and MIC− without affecting the DTMF and
receiving inputs. Removing the LOW level from pin
DLS/MMUTE provides the normal function of the
microphone amplifier after a short time which is
determined by capacitor C

DLS

. With the value of the
capacitor at 470 nF, the release time is in the order of a
few tenths of a millisecond. The microphone mute function
can be realized by a simple switch as illustrated in Fig.9.

Receiving amplifier (pins IR, GAR and QR)

The receiving amplifier has one input (IR) and one output
(QR). The input impedance between pin IR and pin V

EE

is

20 kΩ. The voltage gain from pin IR to pin QR is fixed to

31.3 dB (typ). The gain can be decreased by connecting
an external resistor R

GAR

between pins GAR and QR; the

adjustment range is 12 dB. Two external capacitors C

GAR

(connected between GAR and QR) and C

GARS

(connected

between GAR and VEE) ensure stability. The C

GAR

capacitor provides a first-order low-pass filter. The cut-off
frequency corresponds to the time constant
C

GAR

× (R

GARint

// R

GAR

). R

GARint

is the internal resistor
which sets the gain with a typical value of 100 kΩ.
The relationship C

GARS

=10×C

GAR

must be fulfilled to

ensure stability.
The output voltage of the receiving amplifier is specified for

continuous wave drive. The maximum output swing
depends on the DC line voltage, the RCC resistor, the I

CC

current consumption of the circuit, the Ip current
consumption of the peripheral circuits and the load
impedance.

Automatic gain control is provided on this amplifier for line
loss compensation.

Automatic gain control (pin AGC)

The TEA1113 performs automatic line loss compensation.
The automatic gain control varies the gain of the
microphone amplifier and the gain of the receiving
amplifier in accordance with the DC line current.
The control range is 5.8 dB (which corresponds
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).

The IC can be used with different configurations of feeding
bridge (supply voltage and bridge resistance) by
connecting an external resistor R

AGC

between pins AGC

and VEE. This resistor enables the I

start

and I

stop

line

currents to be increased (the ratio between I

start

and I

stop

is
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.

Mute function (pin

MUTE)

The mute function performs the switching between the
speech mode and the dialling mode. When MUTE is LOW
or open-circuit, the DTMF input is enabled and the
microphone and receiving amplifiers inputs are disabled.
When

MUTE is HIGH, the microphone and receiving
amplifiers inputs are enabled while the DTMF input is
disabled.

DTMF amplifier (pin DTMF)

When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).

The TEA1113 has an asymmetrical DTMF input. The input
impedance between DTMF and V

EE

is 20 kΩ. The voltage
gain from pin DTMF to pin LN is 25.4 dB. When the
resistor R

GAS

is connected, to decrease the microphone
gain, the DTMF gain varies in the same way (the DTMF
gain is 26.4 dB lower than the microphone gain with no
AGC control).

The automatic gain control has no effect on the DTMF
amplifier.

Sidetone suppression

The TEA1113 anti-sidetone network comprising
R

CC

// Z

line

, R

ast1

, R

ast2

, R

ast3

, R

SLPE

and Z

bal

(see Fig.10)
suppresses the transmitted signal in the earpiece.
Maximum compensation is obtained when the following
conditions are fulfilled:

The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Z

bal

.

R

SLPERast1

× R

CC

R

ast2Rast3

+()×=

k

R

ast2

R

ast3RSLPE

+()×()

R

ast1RSLPE

×()

-----------------------------------------------------------------------

=

Z

bal

kZ

line

×=

1997 Mar 27 8

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

In practice, Z

line

varies considerably with the line type and

the line length. Therefore, the value chosen for Z

bal

should
be for an average line length which gives satisfactory
sidetone suppression with short and long lines.
The suppression also depends on the accuracy of the
match between Z

bal

and the impedance of the average

line.
The anti-sidetone network for the TEA1113 (as shown in

Fig.14) attenuates the receiving signal from the line by
32 dB before it enters the receiving amplifier.
The attenuation is almost constant over the whole audio
frequency range.

A Wheatstone bridge configuration (see Fig.11) may also
be used.

More information on the balancing of an anti-sidetone
bridge can be obtained in our publication

“Applications

Handbook for Wired Telecom Systems, IC03b”

, order

number 9397 750 00811.

Fig.6 Typical current IP available from VCC for

peripheral circuits at I

line

=15mA.

(1) With RVA resistor.
(2) Without RVA resistor.

handbook, halfpage

4

3

0

01234

MBG016

1

2

VCC (V)

(1)

(2)

I

p

(mA)

Fig.7 Equivalent impedance between LN and VEE.

Leq=C

REG

× R

SLPE

× RP; RP= internal resistance; RP= 15.5kΩ.

handbook, halfpage

LN

V

EE

SLPE

R

SLPE

C

REG

REG V

CC

R

CC

4.7 µF

100 µF

C

VCC

619 Ω

20 Ω

R

P

V

ref

L

EQ

MBE788

1997 Mar 27 9

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

Fig.8 Available current to drive an LED.

handbook, halfpage

0 100

100

0

20

MBE784

40

60

80

20 40 60 80

I

line

(mA)

I

(mA)

I

SLPE

I

LED

I

sh

Fig.9 Microphone mute function.

handbook, halfpage

MBG017

C

DLS

V

EE

R

DLS

470 nF

3.3 kΩ

DLS/MMUTE

Fig.10 Equivalent circuit of TEA1113 anti-sidetone bridge.

handbook, full pagewidth

MBE787

I

m

Z

ir

IR

R

ast1

R

ast3

R

ast2

SLPE

R

SLPE

V

EE

Z

line

R

CC

LN

Z

bal

1997 Mar 27 10

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

positive continuous line voltage VEE− 0.4 12.0 V
repetitive line voltage during switch-on or

line interruption

V

EE

− 0.4 13.2 V

V

n(max)

maximum voltage on pins I

LED

, SLPE VEE− 0.4 VLN+ 0.4 V

maximum voltage on all other pins V

EE

− 0.4 VCC+ 0.4 V

I

line

line current R

SLPE

=20Ω;

see Figs 12 and 13

− 140 mA

P

tot

total power dissipation T

amb

=75°C;

see Figs 12 and 13
TEA1113 − 625 mW
TEA1113T − 416 mW

T

stg

IC storage temperature −40 +125 °C

T

amb

operating ambient temperature −25 +75 °C

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air (TEA1113) 80 K/W
thermal resistance from junction to ambient in free air mounted on epoxy

board 40.1 × 19.1 × 1.5 mm (TEA1113T)

130 K/W

Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

handbook, full pagewidth

MBE786

I

m

Z

ir

IR

Z

bal

R

ast1

SLPE

R

SLPE

V

EE

Z

line

R

CC

LN

R

A

1997 Mar 27 11

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

Fig.12 Safe operating area (TEA1113).

LINE T

amb

(°C) P

tot

(mW)

(1) 45 1000
(2) 55 875
(3) 65 750
(4) 75 625

handbook, halfpage

12

150

30

246810

MBE782

110

70

I

line

(mA)

VLN − V

SLPE

(V)

(1)

(2)

(3)(4)

Fig.13 Safe operating area (TEA1113T).

LINE T

amb

(°C) P

tot

(mW)

(1) 45 666
(2) 55 583
(3) 65 500
(4) 75 416

handbook, halfpage

212

150

30

70

110

MLC202

46810

130

90

50

I

LN

(mA)

V

LNVSLPE

(V)

(1)
(2)
(3)

(4)

1997 Mar 27 12

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

CHARACTERISTICS

I

line

= 15 mA; VEE=0V; R

SLPE

=20Ω; C

DLS

= 470 nF; AGC pin connected to VEE; Z

line

= 600 Ω; f = 1 kHz;

T

amb

=25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply (pins V

LN

, VCC, SLPE and REG)

V

ref

stabilized voltage between LN
and SLPE

3.45 3.7 3.95 V

V

LN

DC line voltage I

line

=1mA − 1.6 − V

I

line

=4mA − 2.5 − V

I

line

= 15 mA 3.7 4 4.3 V

I

line

= 140 mA −−7.0 V

V

LN(exR)

DC line voltage with an external
resistor R

VA

R

VA(LN−REG)

=82kΩ−3.6 − V

R

VA(SLPE−REG

)=27kΩ− 4.75 − V

∆V

LN(T)

DC line voltage variation with
temperature referred to 25 °C

T

amb

= −25 to +75 °C −±30 − mV

I

CC

internal current consumption VCC= 3.2 V − 1.3 1.6 mA

V

CC

supply voltage for peripherals Ip= 0 mA 2.8 3.2 − V

R

CCint

equivalent supply voltage
impedance

Ip= 0.5 mA − 550 620 Ω

LED supply (pin I

LED

)

I

line(h)

highest line current for
I

LED

< 0.6 mA

− 18 − mA

I

line(l)

lowest line current for maximum
I

LED

− 76 − mA

I

LED(max)

maximum supply current
available

− 19.5 − mA

Microphone amplifier (pins MIC+, MIC− and GAS)
Z

i

 input impedance

differential between pins
MIC+ and MIC−

− 64 − kΩ

single-ended between pins
MIC+/MIC− and V

EE

− 32 − kΩ

G

vtx

voltage gain from MIC+/MIC− toLNV

MIC

= 2 mV (RMS) 50.6 51.8 53 dB

∆G

vtx(f)

gain variation with frequency
referred to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vtx(T)

gain variation with temperature
referred to 25 °C

T

amb

= −25 to +75 °C −±0.3 − dB

CMRR common mode rejection ratio − 80 − dB
∆G

vtxr

gain voltage reduction range external resistor connected

between GAS and REG

−−13 dB

V

notx

noise output voltage at pin LN;
pins MIC+ / MIC− shorted
through 200 Ω

psophometrically weighted
(P53 curve)

−−70.5 − dBmp

1997 Mar 27 13

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

Dynamic limiter and microphone mute (pin DLS/MMUTE)

DYNAMIC LIMITER BEHAVIOUR
V

LN(max)(p-p)

maximum output voltage swing
on the line (peak-to-peak value)

I

line

= 15 mA; V

ref

= 3.7 V 3.8 4.65 − V

I

line

=4mA − 1.6 −

THD total harmonic distortion V

MIC

= 4 mV (RMS) + 10 dB −−2%

V

MIC

= 4 mV (RMS) + 15 dB −−10 %

t

att

attack time, V

MIC

jumps from

2 mV up to 20 mV

C

DLS

= 470 nF − 1.5 5 ms

t

rel

release time, V

MIC

jumps from

20 mV down to 2 mV

C

DLS

= 470 nF 50 150 − ms

MICROPHONE MUTE INPUT
∆G

vtxm

gain reduction DLS/MMUTE = LOW − 80 − dB

V

IL

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V

I

IL

LOW level input current 40 60 −µA

t

rel

release time after a LOW level
on pin DLS/MMUTE

C

DLS

= 470 nF − 30 − ms

Receiving amplifier (pins IR, QR and GAR)

Zi input impedance − 20 − kΩ
G

vrx

voltage gain from IR to QR VIR= 4 mV (RMS) 30.3 31.3 32.3 dB

∆G

vrx(f)

gain variation with frequency
referred to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vrx(T)

gain variation with temperature
referred to 25 °C

T

amb

= −25 to +75 °C −±0.3 − dB

∆G

vrxr

gain voltage reduction range external resistor connected

between GAR and QR

−−12 dB

V

o(rms)

maximum output voltage
(RMS value)

Ip= 0 mA sine wave drive;
RL= 150 Ω; THD = 2%

240 290 − mV

I

p

= 0 mA sine wave drive;

RL= 450 Ω; THD = 2%

350 410 − mV

V

norx(rms)

noise output voltage at pin QR
(RMS value)

RL= 150 Ω;
IR open-circuit;
psophometrically weighted
(P53 curve)

−−86 − dBVp

Automatic gain control (pin AGC)

∆G

vtrx

gain control range for
microphone and receiving
amplifiers with respect to
I

line

=15mA

I

line

=85mA − 5.8 − dB

I

start

highest line current for maximum
gain

− 25 − mA

I

stop

lowest line current for minimum
gain

− 59 − mA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1997 Mar 27 14

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

DTMF amplifier (pin DTMF)

Z

i

 input impedance − 20 − kΩ

G

vdtmf

voltage gain from DTMF to LN V

DTMF

= 25 mV (RMS);

MUTE = LOW

24.2 25.4 26.6 dB

∆G

vdtmf(f)

gain variation with frequency
referred to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vdtmf(T)

gain variation with temperature
referred to 25 °C

T

amb

= −25 to +75 °C −±0.5 − dB

G

vct

voltage gain from DTMF to QR
(confidence tone)

RL= 150 Ω;
V

DTMF

= 25 mV (RMS)

−−18 − dB

Mute function (pin

MUTE)

V

IL

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V

V

IH

HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V

I

MUTE

input current MUTE = HIGH − 1.25 3 µA

∆G

vtrxm

gain reduction for microphone
and receiving amplifiers

MUTE = LOW − 80 − dB

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1997 Mar 27 15

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

APPLICATION INFORMATION

handbook, full pagewidth

Telephone

line

4 x

BAS11

a/b

b/a

V

DR

95 V

BZV85C10

BZX79C10

R

ast1

R

prot

130 kΩ

390 Ω

R

ast2

R

ast3

3.92 kΩ

Z

bal

C

IR

C

GAR

C

GARS

10 Ω

IR

BF473

BSN254

BC547

BC558

BC547

PD

input

R

pd4

470 kΩ

R

pd5

470 kΩ

R

pd3

1 MΩ

R

pd2

470 kΩ

R

pd6

68 kΩ

QR

GAR

MIC+

MIC−

signal

from

dial and

control

circuits

C

VCC

supply for

peripheral

circuits

RCC619 Ω

R

SLPE

R

limit

3.9 Ω

C

GAS

C

REG

20 Ω

R

pd1

470 kΩ

V

CC

DTMF

MUTE

I

LED

LN

SLPE GAS REG AGC

V

EE

TEA1113



100 pF

100 µF

1 nF

100 pF

4.7 µF

MGD020

DLS/MMUTE

C

DLS

R

DLS

470 nF

3.3 kΩ

Fig.14 Typical application of the TEA1113 in sets with Pulse Dialling or Flash facilities.

1997 Mar 27 16

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

PACKAGE OUTLINES

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT38-4

92-11-17
95-01-14

M

H

c

(e )

1

M

E

A

L

seating plane

A

1

w M

b

1

b

2

e

D

A

2

Z

16

1

9

8

E

pin 1 index

b

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

UNIT

A

max.

12

b

1

(1) (1)

(1)

b

2

cD E e M

Z

H

L

mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

min.

A

max.

b

max.

w

M

E

e

1

1.73

1.30

0.53

0.38

0.36

0.23

19.50

18.55

6.48

6.20

3.60

3.05

0.2542.54 7.62

8.25

7.80

10.0

8.3

0.764.2 0.51 3.2

inches

0.068

0.051

0.021

0.015

0.014

0.009

1.25

0.85

0.049

0.033

0.77

0.73

0.26

0.24

0.14

0.12

0.010.10 0.30

0.32

0.31

0.39

0.33

0.0300.17 0.020 0.13

DIP16: plastic dual in-line package; 16 leads (300 mil)

SOT38-4

1997 Mar 27 17

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

8

9

1

16

y

pin 1 index

UNIT

A

max.

A1A2A

3

b

p

cD

(1)E(1) (1)

eHELLpQZywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

1.75

0.25

0.10

1.45

1.25

0.25

0.49

0.36

0.25

0.19

10.0

9.8

4.0

3.8

1.27

6.2

5.8

 0.7

0.6

0.7

0.3

8
0

o
o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.0

0.4

SOT109-1

91-08-13
95-01-23

076E07S MS-012AC

0.069

0.0098

0.0039

0.057

0.049

0.01

0.019

0.014

0.0098

0.0075

0.39

0.38

0.16

0.15

0.050

1.05

0.041

0.24

0.23

0.028

0.020

0.028

0.012

0.01

0.25

0.01 0.004

0.039

0.016

0 2.5 5 mm

scale

SO16: plastic small outline package; 16 leads; body width 3.9 mm

SOT109-1

1997 Mar 27 18

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

DIP

S

OLDERING BY DIPPING OR BY WA VE

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

W

AVE SOLDERING

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

R

EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Mar 27 19

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1113

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1997 SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

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Tel. [phone], Fax.[phone]

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Metro MANILA, Tel.[phone],Fax. [phone]

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Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva35A, 119048 MOSCOW,

Tel. [phone], Fax.[phone]
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Slovenia: see Italy
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Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing &Sales Communications,
Building BE-p, P.O.Box 218, 5600MD EINDHOVEN, TheNetherlands, Fax. [phone]

Argentina: see South America
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Belgium: see The Netherlands
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Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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Tel. [phone], Fax.[phone]
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Worli, MUMBAI 400018, Tel. [phone], Fax. [phone]

Indonesia: see Singapore
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Tel. [phone], Fax.[phone]
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Tel. [phone], Fax.[phone]
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Tel. [phone], Fax.[phone]
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Tel. [phone], Fax.[phone]
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Tel. [phone]
Middle East: see Italy

Printed in The Netherlands 417027/1200/02/pp20 Date of release: 1997 Mar27 Document order number: 9397 750 00632