Datasheet TEA1103, TEA1103TS, TEA1103T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1103; TEA1103T;
TEA1103TS

Fast charge ICs for NiCd and NiMH
batteries

Preliminary specification
Supersedes data of 1997 Oct 09
File under Integrated Circuits, IC03

1999 Jan 27

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

FEATURES

• Safe and fast charging of Nickel Cadmium (NiCd) and
Nickel Metal Hydride (NiMH) batteries

• Pin compatible with the TEA1102x, fast charge ICs for
LiIon, SLA, NiCd and NiMH batteries

• Three charge states for NiCd or NiMH; fast, top-off and
trickle or voltage regulation (optional)

• Adjustable fast charge current [0.5CA to 5CA nominal
(CA = Capacity Amperes)]

• DC top-off and pulsating trickle charge current (NiCd
and NiMH)

• Temperature dependent ∆T/∆t battery full detection

• Automatic switch-over to accurate peak voltage
detection (−

• Possibility to use both ∆T/∆t and peak voltage detection

as main fast charge termination

• Support of inhibit during all charging states

• Manual refresh with regulated adjustable discharge

current (NiCd and NiMH)

• Voltage regulation in the event of no battery

• Support of battery voltage based charge indication and

buzzer signalling at battery insertion, end of refresh and
at full detection

• Single, dual and separate LED outputs for indication of
charge status state

• Minimum and maximum temperature protection

• Time-out protection

• Short-circuit battery voltage protection

• Can be applied with few low-cost external components.

1

⁄4%) if no NTC is applied

TEA1103; TEA1103T;

TEA1103TS

GENERAL DESCRIPTION

The TEA1103x are fast charge ICs which are able to fast
charge NiCd and NiMH batteries.

The main fast charge termination for NiCd and NiMH
batteries are ∆T/∆t and peak voltage detection, both of
which are well proven techniques. The TEA1103x
automatically switches over from ∆T/∆t to peak voltage
detection if the thermistor fails or is not present. The ∆T/∆t
detection sensitivity is temperature dependent, thus
avoiding false charge termination. Three charge states
can be distinguished; fast, top-off and trickle.

Several LEDs, as well as a buzzer, can be connected to
the TEA1103x for indicating battery insertion, charge
states, battery full condition and protection mode.

The TEA1103x are contained in a 20-pin package and are
manufactured in a BiCMOS process, essentially for
integrating the complex mix of requirements in a single
chip solution. Only a few external low cost components are
required in order to build a state of the art charger.

The TEA1103x are pin compatible with the TEA1102x, fast
charge ICs for LiIon, SLA, NiCd and NiMH batteries.

ORDERING INFORMATION

TYPE

NUMBER

TEA1103 DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1
TEA1103T SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
TEA1103TS SSOP20 plastic shrink small outline package; 20 leads; body width 5.3 mm SOT339-1

1999 Jan 27 2

NAME DESCRIPTION VERSION

PACKAGE

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

I

P

∆V

NTC/VNTC

∆V

bat/Vbat

I

Vbat

V

bat(l)

supply voltage 5.5 − 11.5 V
supply current outputs off − 4 − mA
temperature rate dependent

(∆T/∆t) detection level
voltage peak detection level with

respect to top value
input current battery monitor V
voltage at pin 19 for detecting low

V

NTC

=2V;

−−0.25 − %

Tj= 0 to 50 °C
V

bat

=2V;

−−0.25 − %

Tj= 0 to 50 °C

= 0.3 to 1.9 V − 1 − nA

bat

− 0.30 − V

battery voltage

I

IB

battery charge current fast charge 10 − 100 µA

top-off mode − 3 −µA

I

IB(max)

maximum battery charge current voltage regulation full

− 10 −µA

NiCd and NiMH battery

I

IB(Lmax)

f

osc

V

reg

maximum load current no battery − 40 −µA
oscillator frequency 10 − 200 kHz
regulating voltage NiCd and NiMH

(pin V

open-circuit)

stb

− 1.325 or
V

stb

− V

open battery − 1.9 − V

1999 Jan 27 3

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1999 Jan 27 4

BLOCK DIAGRAM

Fast charge ICs for NiCd and NiMH

batteries

Philips Semiconductors Preliminary specification

MTV

NTC

V

bat

19 1 20 14

PROTECTION

NTC

3.3 V

2.8 V

4.25 V

156
kΩ

1 V

9

12
kΩ

0.75 V
36

kΩ

8

present

0.3 V

T

min

T

max

1.9 V

T

cut-off

DA/AD

CONVERTER

1 V

battery
low

end
refresh

no­battery

V

bat

V

CHARGE CONTROL

OUTPUT DRIVERS

1.325 V/V

R

stb

ref

AND

V

bat

V

reg

stb

NiCd

NIMH

CONTROL LOGIC

SUPPLY

BLOCK

charge

1.25/R

1.9 V
no­battery

TEA1103

fast

OSC

top

standby

current

10 µA

load

current

40 µA

A1

4.25 V

100 mV

off

3 µA

ref

LS

OSC

PWM

SET

A2

A3

4×

A4

TIMER

AND

CHARGE

STATUS

INDICATION

RSQ

refresh

15

PWM

17

LS

18

AO

10

RFSH

2

IB

4

PSD

5

LED

6

POD

7

PTD

TEA1103; TEA1103T;

12 13 16 113

V

Fig.1 Block diagram.

V

P

sl

handbook, full pagewidth

V

S

GND FCT

MBH547

TEA1103TS

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

PINNING

SYMBOL PIN DESCRIPTION

V

stb

IB 2 charge current setting
GND 3 ground
PSD 4 program pin sample divider
LED 5 LED output
POD 6 program pin oscillator divider
PTD 7 program pin time-out divider
NTC 8 temperature sensing input
MTV 9 maximum temperature voltage
RFSH 10 refresh input/output
FCT 11 fast charge termination and

V

P

V

sl

OSC 14 oscillator input
PWM 15 pulse width modulator output
V

S

LS 17 loop stability pin
AO 18 analog output
V

bat

R

ref

1 standby regulation voltage input

(NiCd and NiMH)

battery chemistry identification
12 positive supply voltage
13 switched reference voltage output

16 stabilized reference voltage

19 single-cell battery voltage input
20 reference resistor pin

handbook, halfpage

TEA1103; TEA1103T;

V

1

stb

IB

2
3

GND

4

PSD

5

LED

POD

PTD
NTC

MTV

RFSH

Fig.2 Pin configuration.

6
7
8
9

10

TEA1103

MBH539

TEA1103TS

R

20

ref

V

19

bat

18

AO
LS

17

V

16

S

PWM

15

OSC

14

V

13

sl

V

12

P

11

FCT

1999 Jan 27 5

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

INTRODUCTION

All battery types are initially fast charged with an
adjustable high current. Fast charge termination depends
upon the battery type. With NiCd and NiMH batteries the
main fast charge termination will be the∆T/∆t (temperature
detection) and/or peak voltage detection.

The fast charge period is followed by a top-off period for
NiCd and NiMH batteries. During the top-off period the
NiCd and NiMH batteries are charged to maximum
capacity by reduced adjustable charge current.

The top-off period ends after time-out or one hour
respectively.

After the top-off period, the TEA1103x switches over to the
standby mode. For NiCd and NiMH batteries either the
voltage regulation or trickle charge mode can be selected.
The voltage regulation mode is selected when the battery
includes a fixed load. Trickle charge prevents a discharge
of the battery over a long period of time.

Charging principles

HARGING NiCd/NiMH BATTERIES

C
Fast charging of the battery begins when the power supply

voltage is applied and at battery insertion.
During fast charge of NiCd and NiMH batteries, the battery

temperature and voltage are monitored. Outside the
initialized temperature and voltage window, the system
switches over to the top-off charge current.

The TEA1103x supports detection of fully charged NiCd
and NiMH batteries by either of the following criteria:

•∆T/∆t

• Voltage peak detection.

If the system is programmed with ∆T/∆t and V
or V
automatically switches to voltage peak detection if the
battery pack is not provided with a temperature sensing
input (NTC). In this way both packages, with and without
temperature sensor, can be used randomly independent of
the applied full detection method. Besides ∆T/∆t and/or
voltage peak detection, fast charging is also protected by
temperature cut-off and time-out.

To avoid false fast charge termination by peak voltage
detection or ∆T/∆t, full detection is disabled during a short
hold-off period at the start of a fast charge session.
After fast charge termination, the battery is extra charged
by a top-off period. During this period of approximately one
hour, the charge current is lowered thus allowing the

as the main fast charge termination, it

peak

peak

or,∆T/∆t

TEA1103; TEA1103T;

TEA1103TS

battery to be charged to nearly 100% before the system
switches over to standby.

After the battery has been charged to nearly 100% by the
top-off period, discharge of the battery (caused by a load
or by the self-discharge) can be avoided by voltage
regulation or by trickle charge.

If batteries are charged in combination with a load, the
TEA1103x can be programmed to apply voltage regulation
during the standby mode. In this way, discharge of the
battery caused by self-discharge or by an eventual load is
avoided. The regulating voltage is adjustable to the
voltage characteristic of the battery. For battery safety the
charge current is limited and the temperature is monitored
during voltage regulation. If a trickle charge is applied, the
self-discharge of the battery will be compensated by a
pulsating charge current.

To avoid the so called ‘memory effect’ in NiCd batteries, a
refresh can be manually activated. The discharge current
is regulated by the IC in combination with an external
power transistor. After discharging the battery to 1 V per
cell, the system automatically switches over to fast charge.

FUNCTIONAL DESCRIPTION
Control logic

The main function of the control logic is to support the
communication between several blocks. It also controls
the charge method, initialization and battery full detection.
The block diagram of the TEA1103x is illustrated in Fig.1.

Conditioning charge method and initializations

At system switch-on, or at battery insertion, the control
logic sets the initialization mode in the timer block.
After the initialization time the timer program pins can be
used to indicate the charging state using several LEDs.
The charge method is defined at the same time by the
following methods:

• If the FCT pin is floating, the system will charge the
battery according to the charge characteristic of NiCd
and NiMH batteries.

• The standby charge method (NiCd and NiMH), trickle
charge or voltage regulation, is defined by the input pin
V

. By biasing this voltage with a set voltage, the output

stb

voltage will be regulated to the V
is connected to VS, or no NTC is connected the system
applies trickle charge.

set voltage. If this pin

stb

1999 Jan 27 6

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

If pin RFSH is connected to ground by depressing the
switch, the TEA1103x discharges the battery via an
external transistor connected to pin RFSH. The discharge
current is regulated with respect to the external (charge)
sense resistor (R
the battery is discharged to 1 V per cell. Refreshing the

). End-of-discharge is reached when

sense

The inhibit mode has the main priority. This mode is
activated when the V
Inhibit can be activated at any charge/discharge state,
whereby the output control signals will be zero, all LEDs
will be disabled and the charger timings will be set on hold.
Table 1 gives an operational summary.

TEA1103; TEA1103T;

TEA1103TS

input pin is connected to ground.

stb

battery can only be activated during charging of NiCd and
NiMH batteries.

Table 1 Functionality of program pins

FUNCTION FCT NTC RFSH V

Inhibit X

(1)

Refresh not low

(2)

(1)

X

(1)

X

(1)

X
low not low

stb

low

∆T/∆t detection floating note 3 not low not low
∆T/∆t and voltage peak detection high note 3 not low not low

Voltage peak detection not low note 4 not low not low
Trickle charge at standby not low X

(1)

not low high

not low note 4 not low not low

Voltage regulation at standby not low note 3 not low floating

(5)

Notes

1. Where X = don’t care.

2. Not low means floating or high.

3. The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC.

4. The NTC voltage is outside the window for NTC detection.

5. V

Supply block

The supply block delivers the following outputs:

• A power-on reset pulse to reset all digital circuitry at

• A 4.25 V stabilized voltage source (VS) is externally

has to be floating or set to a battery regulating voltage in accordance with the specification.

stb

R

in the event of fast charge and by an internal bias

ref

current source in the event of top-off and trickle charge
(IIB), see Fig.1. The positive node of Rb will be regulated to
zero via error amplifier A1, which means that the voltage

battery insertion or supply switch-on. After a general
reset the system will start fast charging the battery.

across Rb and R

will be the same. The fast charge

sense

current is defined by the following equation:

I

× RbI

fastRsense

×=

ref

available. This source can be used to set the thermistor
biasing, to initialize the programs, to supply the external
circuitry for battery voltage based charge indication and
to supply other external circuitry.

• A 4.25 V bias voltage (V

) is available for use for more

sl

indication LEDs. This output pin will be zero during the
initialization period at start-up, thus avoiding any
interference of the extra LEDs when initializing.

The output of amplifier A1 is available at the loop stability
pin LS, consequently the time constant of the current loop
can be set. When V

(NiCd and NiMH) is applied, the

peak

current sensing for the battery voltage will be reduced,
implying that the charge current will be regulated to zero
during:

t

sense

210POD× t

×=

osc

(1)

(2)

Charge control

The charge current is sensed via a low-ohmic resistor
(R

), see Fig.4. A positive voltage is created across

sense

resistor Rb by means of a current source I

which is set by

ref

1999 Jan 27 7

Actually battery voltage sensing takes place in the last
oscillator cycle of this period.

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

To avoid modulation on the output voltage, the top-off
charge current is DC regulated, defined by the following
equation:

I

top off–

R

× Rb310

sense

where:

t

top off–

227TOD× t

×=

osc

The top-off charge current will be approximately 0.15CA,
which maximizes the charge in the battery under safe and
slow charging conditions. The top-off charge period will be
approximately one hour, so the battery will be extra
charged with approximately 0.15 Q. In this way the battery
is fully charged before the system switches over to
standby.

When pin 1 (V

) is connected to VS, or no NTC is

stb

connected the system compensates the (self) discharge of
the battery by trickle charge. The trickle charge current will
be pulsating, defined by the following equation:

15

I

× R

trickleRsense

× 10

------

b

16

During the non current periods at trickle charge the charge
current is regulated to zero, so that the current for a load
connected in series across the battery with the sense
resistor will be supplied by the power supply and not by the
battery.

If at pin 1 (V

) a reference voltage is set in accordance

stb

with the specification, and no NTC is connected the charge
mode will switch over from current to voltage regulation
after top-off. The reference regulating voltage can be
adjusted to the battery characteristic by external resistors
connected to pin V

stb

.

This reference voltage has to be selected in such a way
that it equals the rest voltage of the battery. By using
voltage regulation, the battery will not be discharged at a
load occurrence. If the V

stb

TEA1103x will apply voltage regulation at 1.325 V during
the standby mode (NiCd and NiMH). The current during
voltage regulation is limited to 0.5CA. If the battery charge
current is maximized to 0.5CA for more than 2 hours
charging will be stopped. Moreover, if the temperature
exceeds T

, charging will be stopped completely.

max

As voltage regulation is referred to one cell, the voltage on
the V

pin must be the battery voltage divided by the

bat

number of cells (NiCd and NiMH).

6–

××=

6–

×=

input pin is floating, the

(3)

(4)

(5)

TEA1103; TEA1103T;

TEA1103TS

Timer

The timing of the circuit is controlled by the oscillator
frequency.

The timer block defines the maximum charging time by
‘time-out’. At a fixed oscillator frequency, the time-out time
can be adapted by the Programmable Time-out Divider
(PTD) using the following equation.

t

time out–

226POD× PTD× t

×=

osc

The time-out timer is put on hold by low voltage,
temperature protection and during the inhibit mode.
The Programmable Oscillator Divider (POD) enables the
oscillator frequency to be increased without affecting
the sampling time and time-out. Raising the oscillator
frequency will reduce the size of the inductive components
that are used.

At fast charging, after battery insertion, after refresh or
supply interruption, the full detector will be disabled for a
period of time to allow a proper start with flat or inverse
polarized batteries. This hold-off period is disabled at fast
charging by raising pin V

to above ±5 V (once).

stb

So for test options it is possible to slip the hold-off period.
The hold-off time is defined by the following equation:

t

hold off–

25–t

×=

time out–

Table 2 gives an overview of the settings of timing and
discharge/charge currents.

(6)

(7)

When charging, the standby mode can only be entered
after a certain period of time depending on time-out.
To support full test of the TEA1103x at application, the
standby mode is also entered when V

bat<Vbat(l)

at top-off.

1999 Jan 27 8

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

Table 2 Timing and current formulae

SYMBOL DESCRIPTION FORMULAE

t

osc

T
T
t

top-off 2

t

time-out 2

t

hold-off 2

t

LED

t

sense 2

t

switch 2

I

fast

I

top-off

I

trickle

I

load-max

I

RFSH

(∆T/∆t) NTC voltage sampling frequency

sampling

(V

sampling

) battery voltage sampling frequency

peak

timing see Fig.3

inhibit or protection

charge/discharge currents

TEA1103; TEA1103T;

17

× POD × PSD × t

2

16

× POD × t

2

27

× POD × t

26

× POD × PTD × t

−5

× t

time-out

14

× POD × t

2

10

× POD × t

21

× POD × PTD × t

V

R

b

×

----------------­R

sense

----------------­R

sense

----------------­R

sense

----------------­R

sense

100 mV

-------------------­R

R

b

R

b

R

b

sense

---------­R

3× 10

15

× 10

-----­16

40× 10

ref
ref

×

TEA1103TS

osc
osc
osc

osc

osc
osc

osc

6–

6–

×

6–

×

1999 Jan 27 9

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

handbook, full pagewidth

PTD programming

:1

(GND):2(n.c.):4(+VS)

200

f

osc

(kHz)

160

120

80

prefered

40

oscillator

range

(POD = GND)

0

0 30 60 90 120 150

(POD = +VS)

prefered

oscillator

range

prefered

oscillator

range

(POD = n.c.)

t

time-out

(min)

180 10

12.5

(R23 min)

TEA1103; TEA1103T;

30 50 70 90

TEA1103TS

125

(R23 max)

C4

(pF)

68

100

150
220

390
560
820
1500

110

R23 (kΩ)

130

MGD280

Fig.3 t

as a function of R23 and PTD with C4 as parameter.

time-out

LED indication

With few external components, indication LEDs can be
connected to the program pins and the LED pin of the
TEA1103x. These program pins change their function from
an input to an output pin after a short initialization time at
system switch-on or battery insertion. Output pin V

sl

enables the external LEDs to be driven and avoids
interaction with the programming of the dividers during the
initialization period.

The applied LEDs indicate:

• Protection

• Refresh

• Fast charge

• 100%

• No-battery.

The LED output pin can also indicate the charging state by
one single LED. The indication LED can be connected
directly to the LED output. This single LED indicates:

• Fast charge (LED on)

• 100% or refresh (LED off)

• Protection or inhibit (LED floating).

The refresh can be indicated by an extra LED connected
to pin 4 (PSD). A buzzer can also be driven from the
TEA1103x to indicate battery insertion end of refresh or full
battery.

AD/DA converter

When battery full is determined by peak voltage detection,
the V

voltage is sampled at a rate given by the following

bat

equation:

t

samplingVpeak

()216POD× t

The analog value of a V

×=

osc

sample is then digitized and

bat

(8)

stored in a register. On the following sample, the digitized
value is converted back to the analog value of V
compared with the ‘new’ V

sample.

bat

bat

and

1999 Jan 27 10

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

At an increase of the battery voltage the 14-bit
Analog-to-Digital Converter (ADC) is refreshed with this
new value. Therefore, the digitized value always
represents the maximum battery voltage. A decreased
V

voltage is not stored, but is compared to the stored

bat

value.
Full is detected when the voltage decrease of V

of the stored peak battery value. To avoid interference due
to the resistance of the battery contacts during battery
voltage sensing, the charge current is regulated to zero
during t = 210× POD × t
PWM. At the last period, the V

, via the regulation pins AO and

osc

voltage is sensed and

bat

stored in a sample-and-hold circuit. This approach
ensures very accurate detection of the battery full
condition (minus1⁄4%).

When battery full is determined by ∆T/∆t, the voltage on
the NTC pin is used as the input voltage to the AD/DA
converter. The sampling time at ∆T/∆t sensing is given by
the following equation:

t

sampling

∆T



-------



∆t

17

POD× PSD× t

2

×=

osc

After this initialized sample time the new temperature
voltage is compared to the preceding AD/DA voltage and
the AD/DA is refreshed with this new value. A certain
increase of the temperature is detected as full battery,
depending on the initialization settings. The decision of full
detection by ∆T/∆t or V

is digitally filtered thus avoiding

peak

false battery full detection.

is1⁄4%

bat

(9)

TEA1103; TEA1103T;

TEA1103TS

Output drivers

The charge current regulation signal is available at two
output pins, AO and PWM.

A

NALOG OUTPUT

The analog control voltage output at pin 18 (AO) can be
used to drive an opto-coupler in mains separated
applications when an external resistor is connected
between AO and the opto-coupler. The maximum current
through the opto-coupler diode is 2 mA. The voltage gain
of amplifier A2 is typical 11 dB (times 3.5). The DC voltage
transfer is given by the following equation:

VAO= 3.5 × (VLS− 1.35).
The AO output can be used for:

• Linear (DC) applications

• Not mains isolated SMPS with a separate controller

• Mains isolated SMPS, controlled by an opto-coupler.

P

ULSE WIDTH MODULATOR (PWM)

The LS voltage is compared internally with the oscillator
voltage to deliver a pulse width modulated output at PWM
(pin 15) to drive an output switching device in a SMPS
converter application via a driver stage. The PWM output
is latched to prevent multi-pulsing. The maximum duty
factor is internally fixed to 79% (typ.). The PWM output can
be used for synchronization and duty factor control of a
primary SMPS via a pulse transformer.

1999 Jan 27 11

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); note 1

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltages

V
V
V
V

P
oLED
n
IB

positive supply voltage −0.5 − +11.5 V
output voltage at pin 5 −0.5 − +15 V
voltage at pins PWM, LS and NTC −0.5 − +V

S

voltage at pin 2 −0.5 − +1.0 V

Currents

I

VS

I

Vsl

I

oLED

I

AO

I

oPWM

I

Rref

I

P

I

P(stb)

current at pin 16 −3 − +0.01 mA
current at pin 13 −1 − +0.3 mA
output current at pin 5 −−12 mA
output current at pin 18 −10 − +0.05 mA
output current at pin 15 −15 − +14 mA
current at pin 20 −1 − +0.01 mA
positive supply current Tj< 100 °C −−30 mA
supply standby current VP=4V − 35 45 µA

Dissipation

P

tot

total power dissipation T

amb

=85°C
SOT146-1 −−1.2 W
SOT163-1 −−0.6 W
SOT339-1 −−0.45 W

V

Temperatures

T

amb

T

j

T

stg

operating ambient temperature −20 − +85 °C
junction temperature −−150 °C
storage temperature −55 − +150 °C

Note

1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in the
voltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are not
violated; current ratings are valid provided that the power rating is not violated.

QUALITY SPECIFICATION

In accordance with the general quality specification for integrated circuits:

“SNW-FQ-611E

”.

1999 Jan 27 12

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

CHARACTERISTICS

V

= 10 V; T

P

=25°C; R

amb

=62kΩ; unless otherwise specified.

ref

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies; pins V

V

P

I

P

I

stb

V

clamp

V

start

V

LSP

V

S

V

SL

V

ref

TC

Vref

supply voltage 5.5 − 11.5 V
supply current outputs off; VP= 11.5 V − 46mA
standby current VP=4V − 35 45 µA
clamping voltage (pin 12) I
start voltage 6.1 6.4 6.7 V
low supply protection level 5.1 5.3 5.5 V
source voltage (stabilized) IS= 2 mA 4.14 4.25 4.36 V
LED source voltage I
reference voltage I
temperature coefficient of the

reference voltage

∆V

ref

/∆V

power supply rejection ratio of

P

the reference voltage

∆V

ref

load rejection of source

, VS,R

P

and V

ref

sl

= 30 mA 11.5 − 12.8 V

clamp

=50µA 4.05 4.25 4.45 V

LED

=20µA; VP= 10 V 1.21 1.25 1.29 V

ref

T

=0to45°C;

amb

I

=20µA; V

ref

= 1.25 V

ref

f = 100 Hz; VP=8V;

0 ±60 ±120 ppm/K

−46 −−dB

∆VP= 2 V (p-p)
∆IS= 20 mA; VP=10V −− 5mV

voltage

I

Rref

current range of reference

10 − 100 µA

resistor

Charge current regulation; pins IB and R

IIB/I

ref

V

thIB

I

IB

I

IB(max)

I

IB(Lmax)

I

IB(LI)

fast charge ratio VIB=0

threshold voltage at pin IB T

charge current top-off mode; VIB= 0 2.6 3.2 3.8 µA
maximum charge current voltage regulation full

maximum load current open battery; VIB= 0 34 42 50 µA
input leakage current currentless mode −− 170 nA

Refresh; pin RFSH

V

Rsense

V

RFSH

sense resistor voltage

refresh voltage for
programming start of refresh

V

bat

voltage at pin V

bat

for

detecting end of refresh

ref

I

=10µA 0.93 1.03 1.13

ref

I

= 100 µA 0.93 1.0 1.07

ref

=25°C −2 − +2 mV

amb

=0to45°C −3 − +3 mV

T

amb

9 10.5 12 µA

NiCd/NiMH battery; VIB=0

I

refresh

mode; I

=

----------------­R

refresh

V

IB

; refresh

sense

=18mA

75 100 125 mV

NiCd/NiMH 0 − 250 mV

NiCd/NiMH 0.96 1.0 1.04 V

1999 Jan 27 13

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

source(max)

V

RFSH(max)

V

RFSH(off)

maximum source current VIB=75mV; VP=10V

V

= 2.7 V;

RFSH

T

=25°C

amb

maximum refresh voltage I

= 1 mA 2.7 −−V

RFSH

voltage at pin RFSH when

1.4 2 2.6 mA

700 770 840 mV

refresh is off

Temperature related inputs; pins NTC and MTV

V

NTCh

V

NTCh(hy)

V

NTCl

input voltage at pin NTC for
detecting high temperature

hysteresis of V

NTCh

input voltage at pin NTC,

pin MTV open-circuit 0.9 1 1.1 V
MTV setting 0.95MTV MTV 1.05MTV V

− 80 − mV

2.7 2.8 2.9 V

detecting low temperature

V

NTCl(hy)

V

NTC(co)

hysteresis of V

NTCl

input voltage at pin NTC for

− 75 − mV

0.7MTV 0.75MTV 0.8MTV V

detecting temperature cut-off

V

NTC(bat)

maximum input voltage at

3.22 3.3 3.38 V
pin NTC for detecting battery
with NTC

I

NTC

V

MTV

input current at pin NTC V

=2V −5 − +5 µA

NTC

voltage level at pin MTV default (open-circuit) 0.95 1 1.05 V

0.5 − 2.5 V

∆V

NTC/VNTC

∆T/∆t detection level V

=2V; Tj= 0 to 50 °C −−0.25 − %

NTC

Voltage regulation

V

reg

regulation voltage NiCd and NiMH;

pin V

open-circuit

stb

NiCd and NiMH;
V

= 1.5 V

stb

1.34 1.325 1.40 V

0.99V

stbVstb

1.01V

stb

V

open battery 1.86 1.9 1.94 V

TC

g

Vreg

m

temperature coefficient of
regulation voltage

transconductance of amplifierA3V

V

reg

T

amb
bat

= 1.325 V;

= 1.9 V;

0 ±60 ±120 ppm/K

=0to45°C

− 2.0 − mA/V

no battery mode

Program pin V

V

stb

V

stb(im)

stb

open voltage at pin V
voltage at pin V

stb

for

stb

programming inhibit mode

V

stb(st)

voltage at pin V

stb

for

NiCd and NiMH 1.0 − 2.2 V
programming voltage
regulation at standby

V

stb(tc)

voltage at pin V

stb

for

NiCd and NiMH 2.6 − V
programming trickle charge at
standby

1999 Jan 27 14

1.30 1.325 1.35 V
0 − 0.8 V

S

V

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Program pins; PSD, POD and PTD

V

4,6,7

voltage level at pins PSD,

default (open-circuit) 1.9 2.1 2.3 V
POD or PTD

V

4,6,7(1)

voltage level at pins PSD,

0 − 1.2 V
POD or PTD for programming
the divider = 1

V

4,6,7(2)

voltage level at pins PSD,

1.6 − 2.5 V
POD or PTD for programming
the divider = 2

V

4,6,7(4)

voltage level at pins PSD,

3.1 − V

S

V
POD or PTD for programming
the divider = 4

I

PODsink

protection current for

V

= 1.5 V 8 10 12 mA

POD

multi-LED indication

I

PTDsink

full battery current for

V

= 1.5 V 8 10 12 mA

PTD

multi-LED indication

I

PSDsink

refresh current for multi-LED

V

= 1.5 V 8 10 12 mA

PSD

indication

I

LI

input leakage current V

V
V

POD
PTD
PSD

= 4.25 V;
= 4.25 V;
= 4.25 V

0 − 50 µA

Program pin FCT

V

FCT(or)

voltage level for programming
∆T/∆t or V

as fast charge

peak

NiCd and NiMH 0.0 − 3.3 V

termination

V

FCT(and)

voltage level for programming
∆T/∆t and V

as fast charge

peak

NiCd and NiMH 3.7 − V

S

V

termination

V

FCT

voltage level at pin FCT default (open-circuit) 2.3 2.6 2.9 V

Program pin LED

V

LED(m)

output voltage level for

0 − 2.5 V
programming multi-LED
indication

V

LED(s)

output voltage level for

3.1 − V

P

V
programming single LED
indication

I

sink(max)

I

LI(LED)

V

o(max)

maximum sink current V
input leakage current V

= 1.5 V 8 10 12 mA

LED

=10V 0 − 70 µA

LED

V

= 0.6 V 0 − 5 µA

LED

maximum output voltage −− 15 V

1999 Jan 27 15

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Output drivers; AO, LS and PWM

I

AO(source)

analog output source current VAO= 3 V (p-p);

−9 − 0mA

VLS= 2.8 V

I

AO(sink)

analog output sink current VAO= 3 V (p-p);

50 −−µA

VLS= 1.2 V

g

m1

G

v1,2

transconductance of amplifierA1VIB=50mV − 250 −µA/V

voltage gain of amplifiers

VAO= 3 V (p-p) − 72 − dB

A1 and A2

G

v2

I

LS(source)

voltage gain of amplifier A2 VAO= 2 V (p-p) − 11 − dB
maximum source current

VLS= 2.25 V −25 −21 −16 µA

(pin LS)

I

LS(sink)

maximum sink current

VLS= 2.25 V 16 21 25 µA

(pin LS)

I

OH(PWM)

I

OL(PWM)

δ

PWM

Battery monitor; V

I

Vbat

V

bat

HIGH level output current V
LOW level output current V

=3V −19 −15 −11 mA

PWM

=0.7V 1014 18mA

PWM

maximum duty factor − 79 − %

bat

battery monitor input current V
voltage range of V

peak

= 1.85 V − 1 − nA

bat

0.3 − 2V

detection

∆V

bat/Vbat

∆V

bat

Protections; V

V

bat(l)

V

detection level with

peak

respect to top level
voltage resolution for V

bat

peak

maximum voltage at pin V

V
Tj= 0 to 50 °C

bat

= 1.85 V;

bat

−−0.25 − %

− 0.6 − mV

0.25 0.30 0.35 V
for detecting low battery
voltage

Oscillator; pin OSC

V

osc(H)

HIGH level oscillator switching
voltage

V

osc(L)

LOW level oscillator switching
voltage

f

osc(min)

f

osc(max)

minimum oscillator frequency R

maximum oscillator frequency R

= 125 kΩ;

ref

C

osc

= 12.5 kΩ;

ref

C

osc

= 400 pF

= 400 pF

1999 Jan 27 16

− 2.5 − V

− 1.5 − V

20.9 23 25.1 kHz

158 174 190 kHz

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1999 Jan 27 17

APPLICATION INFORMATION

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH

batteries

VI (DC)

7 to 18 V

R1

1

kΩ

C1
100 µF

BC337

TR2

62 Ω

BD231

R2

TR1

L1

(SMPS only)

400 µH

D1
BYD74D

D8

BYV28

(only for

more than

3 cells

750

D2

D3

R5

Ω

TIP110

TR3
BC337

single

BAW62

TR4

multi

LED

no-

battery

6 kΩ

R3

1.5 kΩ
VI (DC)>13V

R4 3.9 kΩ

D4

fast

D5

protection

D6

100%

D6

refresh

SMPS mode

linear mode

refresh

only for

:4
:1

:4
:1

:4
:1

33 kΩ

R6

33 kΩ

R7

33 kΩ

R8

33 kΩ

R9

33 kΩ

R10

33 kΩ

R11

C2

1.5 nF

R12
0 Ω

(Rb)

V

S

GND

V

S

GND

V

S

GND

V

sl

LED

5

POD

6

PTD

7

PSD

4

PWM

15

AO

18

RFSH

10

LS

17

IB

2

(2)

R13

5.1 kΩ
(0.15A top off)

TEA1103

R

(1A refresh)

R14 0.1 Ω

sense

NTC
10 kΩ
(25

R24
80 kΩ
(0.1%)

o

C)

R28
10 kΩ
(0.1%)

NiCd
NiMH
3/6/9 cell

LOAD

C5
470
µF

R15
270 Ω

C3 100 nF

V

P

1213

V

4.25 V

S

16

NTC

8

MTV

9

FCT

11

V

stb

1

V

bat

19

R

ref

20

OSC

14

GND

3

R16

8.2 kΩ

130 kΩ

R17

47 kΩ

R21P2R22

R20

16 kΩ 15 kΩ 12 kΩ

∆T/∆t

∆T/∆t

or

and

V

V

peak

C4
220
pF

peak

47 kΩ

NiCd 3
NiMH 3

(3)

R23
62 kΩ
(1A fast
charge)

V

reg

adjust.

P1
T

max

adjust.

R25
40 kΩ
(0.1%)

NiCd 6
NiMH 6

R19

75 kΩ

R18

24 kΩ

NiCd 9
NiMH 9

R26
8 kΩ
(0.1%)

R27
8 kΩ
(0.1%)

TEA1103; TEA1103T;

(1)

MBH545

100 mV

(1) or if not applicable.

(2)

(3)

= R14

R14

-------------------­I

refresh

R14 I

=

R13

------------------------------------

R23

=

-----------------------------------------------

R14 I

×

3 µA

1.25 R13×

×

top off–

fast ch earg–

100 mV

=

----------------------------­I

fast ch earg–

TEA1103TS

handbook, full pagewidth

Fig.4 Basic test board diagram.

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

handbook, full pagewidth

VI (DC)

7 to 11.5 V

TR1 BD231

R1
1 kΩ

C1
100 µF

TR2

BC337

D1

:4

:1

:4

:1

:4

:1

R3
180 Ω

C2 1.5 nF

(Rb)

(D2 for more than 3 NiCd cells)

(R

= 270 Ω for more than 3 NiCd cells)

supply

R2

1.5
V

sl

kΩ

V

S

GND

V

S

GND

V

S

GND

R4

5.1 kΩ
(75 mA top off)

13 12

LED

5

POD

6

PTD

7

PSD

4

PWM

15

AO

18

RFSH

10

LS

17

IB

2

TEA1103

R5 0.22 Ω

R

sense

TEA1103; TEA1103T;

TEA1103TS

+ battery

R10
200 kΩ
(1%)

C3

V

P

100 nF

V

S

16

NTC

8

MTV

9

FCT

11

V

stb

1

V

bat

19

R

ref

20

OSC

14

GND

3

4.25 V

R6
10 kΩ

R7

NiCd/NiMH =

C4
220 pF
(f

=

osc

75 kHz)

∞

R8
62 kΩ
(0.5 A
fast
charge)

R9
100 kΩ
(0.1%)

− battery

C5
470 µF

NiCd
NiMH
3 cells

MBH546

Fig.5 Linear application diagram.

1999 Jan 27 18

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

handbook, full pagewidth

C1
+V

100%

−V

TR1

in

R5

refresh

fast-charge

R6

protection

R7
R8

R9

no-battery

in

TR4

R18

R1

TR3

R10

R11

D2

D7

D4

D5

D6

D3

V

D1

:4PSD:1 :4POD:1S-LED-M

PTD

sense

R4

V

P1

D8

L1

stb

R3

R13

TEA1102 TEST BOARD, V2 JB D&A NIJMEGEN

I

b

R15

MTV

R19

R16

NTC

R14

1

GND

P2

refresh

R23

NTC

R17

GND

C3

LIN

R30

C7

+V

V

sl

D9
D10

s

V

bat

C6

C4

C5

R25

R26

1L 2L 3L

R29

R22
R21
R20

R27

LIN

C2

PWM

TEA1103; TEA1103T;

TEA1103TS

+BAT

R24

R28

number

of

cells

TR2

PWM

R2

FCT

R12

SLA
Li-Ion
dT/dt or V
dT/dt and V

−BAT

MBH073

This test board (designed for the TEA1102x) can also be used for the TEA1103x.

Fig.6 Component side of printed-circuit board (test board).

1999 Jan 27 19

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

handbook, full pagewidth

81.28

TEA1103; TEA1103T;

TEA1103TS

86.35

Dimensions in mm.

MBH072

Fig.7 Track side of printed-circuit board (test board).

1999 Jan 27 20

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

handbook, full pagewidth

+V

TR1

in

R1

R3

PSD

R2
POD
PTD

:1 :4

C1

−V

in

D1

R4

TEA1103; TEA1103T;

TEA1103TS

TEA1102 LINEAR JB D&A CIC NIJM

R10

R7

C3

+battery

C5

C2

C4

−battery

MBH071

TR2

R8

1

R9

R6

R5

This printed-circuit board (designed for the TEA1102x) can also be used for the TEA1103x.

Fig.8 Component side of printed-circuit board (linear application).

handbook, full pagewidth

TEA1102 LINEAR JB D&A CIC NIJM

MBH070

This printed-circuit board (designed for the TEA1102x) can also be used for the TEA1103x.

Fig.9 Track side of printed-circuit board (linear application).

1999 Jan 27 21

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

PACKAGE OUTLINES

DIP20: plastic dual in-line package; 20 leads (300 mil)

D

seating plane

L

Z

20

e

b

TEA1103; TEA1103T;

TEA1103TS

SOT146-1

M

E

A

2

A

A

1

w M

b

1

11

c

(e )

1

M

H

pin 1 index

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

mm

OUTLINE

VERSION

SOT146-1

1 2

min.

max.

1.73

1.30

0.068

0.051

IEC JEDEC EIAJ

b

b

1

0.53

0.38

0.021

0.015

0.36

0.23

0.014

0.009

REFERENCES

cD E e M

(1) (1)

26.92

26.54

1.060

1.045

SC603

6.40

6.22

0.25

0.24

E

10

(1)

M

e

L

1

3.60

8.25

3.05

7.80

0.14

0.32

0.12

0.31

EUROPEAN

PROJECTION

H

E

10.0

0.2542.54 7.62

8.3

0.39

0.010.10 0.30

0.33

ISSUE DATE

w

92-11-17
95-05-24

Z

max.

2.04.2 0.51 3.2

0.0780.17 0.020 0.13

1999 Jan 27 22

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

SO20: plastic small outline package; 20 leads; body width 7.5 mm

D

c

y

Z

20

11

TEA1103; TEA1103T;

TEA1103TS

E

H

E

A

X

v M

SOT163-1

A

pin 1 index

1

e

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

2.65

0.10

A

1

0.30

0.10

0.012

0.004

A2A3b

2.45

0.25

2.25

0.096

0.01

0.089

p

0.49

0.36

0.019

0.014

cD

0.32

0.23

0.013

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

10

w M

b

p

scale

(1)E(1) (1)

13.0

12.6

0.51

0.49

eHELLpQ

7.6

1.27

7.4

0.30

0.050

0.29

10.65

10.00

0.419

0.394

Q

A

2

A

1

1.4

0.055

1.1

0.4

0.043

0.016

detail X

1.1

1.0

0.043

0.039

(A )

L

p

L

0.25

0.01

A

3

θ

0.25 0.1

0.01

0.004

ywv θ

Z

0.9

0.4

0.035

0.016

o

8

o

0

OUTLINE
VERSION

SOT163-1

IEC JEDEC EIAJ

075E04 MS-013AC

REFERENCES

1999 Jan 27 23

EUROPEAN

PROJECTION

ISSUE DATE

95-01-24
97-05-22

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm

D

c

y

Z

20 11

E

H

E

TEA1103; TEA1103T;

TEA1103TS

SOT339-1

A

X

v M

A

pin 1 index

110

w M

b

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

2.0

0.21

0.05

1.80

1.65

0.25

p

0.38

0.25

UNIT A1A2A3b

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

p

0 2.5 5 mm

scale

(1)E(1)

cD

0.20

7.4

7.0

5.4

5.2

0.09

eHELLpQ

0.65

7.9

7.6

Q

A

2

A

1

detail X

1.03

0.9

0.63

0.7

(A )

L

p

L

3

θ

0.131.25 0.2 0.1

A

(1)

Zywv θ

0.9

0.5

o

8

o

0

OUTLINE

VERSION

SOT339-1 MO-150AE

IEC JEDEC EIAJ

REFERENCES

1999 Jan 27 24

EUROPEAN

PROJECTION

ISSUE DATE

93-09-08
95-02-04

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

SOLDERING
Introduction

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs, or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.

Through-hole mount packages

S

OLDERING BY DIPPING OR BY SOLDER WAVE

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

M

ANUAL SOLDERING

Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

stg(max)

). If the

TEA1103; TEA1103T;

TEA1103TS

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

W

AVE SOLDERING

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

ANUAL SOLDERING

M
Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

1999 Jan 27 25

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

Suitability of IC packages for wave, reflow and dipping soldering methods

MOUNTING PACKAGE

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable
Surface mount HLQFP, HSQFP, HSOP, SMS not suitable

(4)

PLCC
LQFP, QFP, TQFP not recommended
SQFP not suitable suitable −
SSOP, TSSOP, VSO not recommended

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

, SO suitable suitable −

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

WAVE REFLOW

(2)

TEA1103; TEA1103T;

TEA1103TS

SOLDERING METHOD

− suitable

(3)

(4)(5)

(6)

suitable −

suitable −

suitable −

(1)

DIPPING

.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Jan 27 26

Philips Semiconductors Preliminary specification

Fast charge ICs for NiCd and NiMH
batteries

TEA1103; TEA1103T;

TEA1103TS

NOTES

1999 Jan 27 27

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Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

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For all other countries apply to: Philips Semiconductors,
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5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1999 SCA61
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Printed in The Netherlands 465002/750/03/pp28 Date of release: 1999 Jan 27 Document order number: 9397 750 04794