Datasheet TEA1098TV, TEA1098H Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1098

Speech and handsfree IC

Product specification
Supersedes data of 1999 May 20
File under Integrated Circuits, IC03

1999 Oct 14

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

FEATURES
Line interface

• Low DC line voltage

• Voltage regulator with adjustable DC voltage

• Symmetrical high impedance inputs (70 kΩ) for

dynamic, magnetic or electret microphones

• DTMF input with confidence tone on earphone and/or
loudspeaker

• Receive amplifier for dynamic, magnetic or
piezo-electric earpieces(with externally adjustable gain)

• Automatic Gain Control (AGC) for true line loss
compensation.

Supplies

• Provides a strong 3.35 V regulated supply for
microcontrollers or diallers

• Provides filtered power supply, optimized according to
line current

• Filtered 2.0 V power supply output for electret
microphone

• PD logic input for power-down.

Handsfree

• Asymmetrical high input impedance for electret
microphone

• Loudspeaker amplifier with single-ended rail-to-rail
output and externally adjustable gain

• Dynamic limiter on loudspeaker amplifier to prevent
distortion

• Logarithmic volume controlon loudspeakeramplifier via
linear potentiometer

• Duplex controller consisting of:
– Signal and noise envelope monitors for both

channels (with adjustable sensitivities and timing)

– Decision logic (with adjustable switch-over and Idle

mode timing)

– Voice switch control (with adjustable switching range

and constant sum of gain during switching).

APPLICATIONS

• Line powered telephone sets.

GENERAL DESCRIPTION

The TEA1098 is an analog bipolar circuit dedicated to
telephonyapplications. It includesa line interface,handset
(HS) microphone and earpiece amplifiers, handsfree (HF)
microphone and loudspeaker amplifiers and a duplex
controller with signal and noise monitors on both channels.

This IC provides a 3.35 V supply for a microcontroller or
dialler and a 2.0 V filtered voltage supply for an electret
microphone.

ORDERING INFORMATION

TYPE

NUMBER

TEA1098TV VSO40 plastic very small outline package; 40 leads SOT158-1
TEA1098H QFP44 plastic quad flat package; 44 leads (lead length 1.3 mm);

TEA1098UH − bare die; on foil −

1999 Oct 14 2

NAME DESCRIPTION VERSION

body 10 × 10 × 1.75 mm

PACKAGE

SOT307-2

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

QUICK REFERENCE DATA

I

= 15 mA; R

line

TEA1098UH; AGC pin connected to LN;
unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

V

SLPE

V

BB

V

DD

I

BB

I

BB(pd)

G

v(MIC-LN)

G

v(IR-RECO)

∆G

v(QR)

G

v(TXIN-TXOUT)

G

v(HFTX-LN)

G

v(HFRX-LSAO

SWRA switching range − 40 − dB

∆SWRA switching range adjustment with R

∆G

v(trx)

SLPE

=20Ω; Z

= 600 Ω; f = 1 kHz; T

line

=25°C for TEA1098H and TEA1098TV; Tj=25°C for

amb

PD = HIGH; HFC = LOW; MUTE = HIGH; measured according to test circuits;

line current operating range normal operation 11 − 130 mA

with reduced performance 1 − 11 mA

stabilized voltage between SLPE
and GND

regulated supply voltage for
internal circuitry

regulated supply voltage on pin
V

DD

current available on pin V

BB

I

= 15 mA 3.4 3.7 4.0 V

line

I

= 70 mA 5.7 6.1 6.5 V

line

I

= 15 mA 2.75 3.0 3.25 V

line

I

= 70 mA 4.9 5.3 5.7 V

line

VBB> 3.35 V + 0.25 V (typ.) 3.1 3.35 3.6 V
otherwise − V

− 0.25 − V

BB

in speech mode − 11 − mA
in handsfree mode − 9 − mA

current consumption on V

BB

PD = LOW − 460 −µA

during power-down phase
voltage gain from pin MIC+/MIC−

V

= 5 mV (RMS) 43.3 44.3 45.3 dB

MIC

to LN
voltage gain from pin IR

VIR= 8 mV (RMS) 28.7 29.7 30.7 dB

(referenced to LN) to RECO
gain voltage range between pins

−3 − +15 dB

RECO and QR
voltage gain from pin TXIN to

TXOUT
voltage gain from pin HFTX to LN V

) voltage gain from pin HFRX

to LSAO

V

= 3 mV (RMS);

TXIN

R

= 30.1 kΩ

GATX

= 15 mV (RMS) 33.5 34.7 35.9 dB

HFTX

V

= 30 mV (RMS);

HFRX

R

GALS

= 255 kΩ; I

referenced to

SWR

=70mA

line

12.7 15.2 17.7 dB

25.5 28 30.5 dB

−40 − +12 dB

365 kΩ

gain control range for transmitand

I

= 70 mA 5.45 6.45 7.45 dB

line

receive amplifiers affected by the
AGC; with respect to I

=15mA

line

1999 Oct 14 3

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

BLOCK DIAGRAM

REG

SLPE

19

LN 18 (15)

STARTER

LINE CURRENT DETECTION
LOW VOLTAGE BEHAVIOUR

(16)17(14)

R1

SWITCH

SUPPLY

MANAGEMENT

(10) 13

(19) 22

(20) 23

V

BB

V

DD

MICS

AGC

GND

HFTX

DTMF

MIC+
MIC−

TXIN

TSEN
TENV

TNOI

RNOI
RENV
RSEN

GALS

LSAO

21 (18)

16 (13)

39 (36)

35 (32)

34 (31)
33 (30)

31 (28)

8 (4)
7 (3)
6 (2)
9 (5)
11 (7)
10 (6)

14 (11)

15 (12)

AGC

Tail currents for preamps

ATTENUATOR

TX AND RX

ENVELOPE AND NOISE

DETECTORS

BUFFERS

AND

COMPARATORS

TEA1098

DUCO LOGIC

SWT STATUS

POWER-DOWN

CURRENT SOURCES

LOGIC

INPUTS

DECODING

VOICE

SWITCH

VOLUME

CONTROL

(38) 1

(37) 40

(39) 2

(27) 30
(26) 29

(29) 32

(24) 27
(25) 28

(21) 24

(22) 25

(23) 26

(1) 5

PD

HFC
MUTE

GATX
TXOUT

GNDTX

SWT
IDT

STAB

SWR

VOL

HFRX

12 (8)

DLC

RECO
GARX

QR

38 (35)
37 (34)

36 (33)

DYNAMIC

LIMITER

Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.

Fig.1 Block diagram.

1999 Oct 14 4

ATTENUATOR

(17) 20

MGL317

IR

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

PINNING

SYMBOL

PD 1 38 41 power-down input (active LOW)
MUTE 2 39 42 logic input (active LOW)
n.c. 3 40 43 not connected
n.c. 4 41 44 not connected
n.c. − 42 45 not connected
n.c. − 43 46 not connected
n.c. − 44 47 not connected
HFRX 5 1 1 receive input for loudspeaker amplifier
TNOI 6 2 2 transmit noise envelope timing adjustment
TENV 7 3 3 transmit signal envelope timing adjustment
TSEN 8 4 4 transmit signal envelope sensitivity adjustment
RNOI 9 5 5 receive noise envelope timing adjustment
RSEN 10 6 6 receive signal envelope sensitivity adjustment
RENV 11 7 7 receive signal envelope timing adjustment
DLC 12 8 8 dynamic limiter capacitor for the loudspeaker amplifier
n.c. − 9 9 and 13 not connected
V

BB

GALS 14 11 11 loudspeaker amplifier gain adjustment
LSAO 15 12 12 loudspeaker amplifier output
GND 16 13 14 and 15 ground reference
SLPE 17 14 16 line current sense
LN 18 15 17 positive line terminal
REG 19 16 18 line voltage regulator decoupling
IR 20 17 19 receive amplifier input
AGC 21 18 20 automatic gain control/line loss compensation
V

DD

MICS 23 20 22 microphone supply
STAB 24 21 23 reference current adjustment
SWR 25 22 24 switching range adjustment
VOL 26 23 25 loudspeaker volume adjustment
SWT 27 24 26 switch-over timing adjustment
IDT 28 25 27 Idle mode timing adjustment
TXOUT 29 26 28 HF microphone amplifier output
GATX 30 27 29 HF microphone amplifier gain adjustment
TXIN 31 28 30 HF microphone amplifier input
GNDTX 32 29 31 to 32 ground reference for microphone amplifiers
MIC− 33 30 33 negative HS microphone amplifier input
MIC+ 34 31 34 positive HS microphone amplifier input

TEA1098TV TEA1098H TEA1098UH

PIN PAD

DESCRIPTION

13 10 10 stabilized supply for internal circuitry

22 19 21 3.35 V regulated voltage supply for microcontrollers

1999 Oct 14 5

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

SYMBOL

DESCRIPTION

TEA1098TV TEA1098H TEA1098UH

DTMF 35 32 35 dual tone multi-frequency input
QR 36 33 36 earpiece amplifier output
GARX 37 34 37 earpiece amplifier gain adjustment
RECO 38 35 38 receive amplifier output
HFTX 39 36 39 transmit input for line amplifier
HFC 40 37 40 logic input

PIN PAD

handbook, halfpage

PD

MUTE

n.c.
n.c.

HFRX

TNOI
TENV
TSEN

RNOI
RSEN
RENV

DLC
V

BB

GALS
LSAO

GND

SLPE

LN

REG

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17
18
19
20

IR

TEA1098TV

MGL341

40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21

HFC
HFTX
RECO
GARX
QR
DTMF
MIC+
MIC−
GNDTX
TXIN
GATX
TXOUT
IDT
SWT
VOL
SWR
STAB
MICS
V

DD

AGC

Fig.2 Pin configuration (TEA1098TV).

1999 Oct 14 6

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

handbook, full pagewidth

n.c.

44

n.c.

43

n.c.
42

n.c.
41

n.c.
40

MUTE
39

PD
38

HFC
37

HFTX
36

RECO
35

GARX
34

1

HFRX

2

TNOI

3

TENV

4

TSEN

5

RNOI

6

RSEN
RENV

DLC

n.c.

V

BB

GALS

7
8

9
10
11

12

13

GND

LSAO

14

SLPE

TEA1098H

15

LN

Fig.3 Pin configuration (TEA1098H).

FUNCTIONAL DESCRIPTION

All data values given in this chapter are typical, except
when otherwise specified.

Supplies

LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE,
REG AND VBB)

Thesupply for theTEA1098 and itsperipheralsis obtained
from the line. The IC generates a stabilized reference
voltage (V

) between pins SLPE and GND.

ref

This reference voltage is equal to 3.7 V for line currents
below 18 mA. When the line current rises above 45 mA,
the reference voltage rises linearly to 6.1 V. For line
currents below 9 mA, V

is automatically adjusted to a

ref

lower value. The performance of the TEA1098 in this
so-called low voltage area is limited (see Section “Low
voltage behaviour”). The reference voltage is temperature
compensated.

33

QR
DTMF

32
31

MIC+

30

MIC−
GNDTX

29
28

TXIN
GATX

27

TXOUT

26

IDT

25
24

SWT
VOL

23

21

16

REG

17

18

19

IR

DD

V

AGC

20

MICS

STAB

22

SWR

FCA020

The voltage between pins SLPE and REG is used by the
internal regulator to generate the stabilized reference
voltage and is decoupled by a capacitor connected
between pins LN and REG. This capacitor, converted into
an equivalent inductance realizes the set impedance
conversionfrom its DC value(R

)to its AC value(done

SLPE

by an external impedance).
The IC regulates the line voltage at pin LN which can be

calculated as follows:

V

I

V

LN

SLPEIline

refRSLPEISLPE

×+=

Ix–=

where:
I

= line current.

line

Ix= current consumed on pin LN (approximately a
few µA).

I

= current flowing through the R

SLPE

SLPE

resistor.

1999 Oct 14 7

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

The preferred value for R

is 20 Ω. Changing this value

SLPE

not only affects the DC characteristics, it also influences
the transmit gains to the line, the gain control
characteristic,the sidetonelevel, and themaximum output
swing on the line.

Figure 4 shows that the internal circuit is supplied by pin
VBB, which combined with the line interface is a strong
supply point.

The line current through resistor R

is sunk by the V

SLPE

BB

voltage stabilizer, and is suitable for supplying a
loudspeaker amplifier or any peripheral IC. Voltage VBBis

3.0 V at line currents below 18 mA and rises linearly to

5.3 V when the line current rises above 45 mA. It is
temperature compensated.

handbook, full pagewidth

LN

C

REG

4.7 µF

SLPE

TP1

R3

R

SLPE

20 Ω

J1

The current switch TR1-TR2 is intended to reduce
distortionof large AC linesignals. Current I

SLPE

issupplied
to VBB via TR1 when the voltage on pin SLPE is above
VBB+ 0.25 V. Whenthe voltage on pin SLPE is below this
value, I

Voltage V

is shunted to GND via TR2.

SLPE

can be increased by connecting an external

ref

resistor between pins REG and SLPE. For large line
currents, this increase can slightly affect some dynamic
performances such as maximumsignal level on the line at
2% Total Harmonic Distortion(THD). Theexternal resistor
does not affect the voltage on pin VBB; see Fig.5 for the
main DC voltages.

TR2

GND

D1

E1

TR1

E2

V

BB

REG

GND

R1

R2

from

preamp

TN1

Fig.4 Line interface principle.

D1

TN2

J2

GND

MGM298

1999 Oct 14 8

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

handbook, full pagewidth

8

voltages

(V)

6

4

2

0

0 0.01

0.02 0.05

Fig.5 Main DC voltages.

V

SUPPLY FOR MICROCONTROLLERS (PIN V

DD

The voltage on the V

supply point follows the voltage on

DD

DD

)

VBBwith a difference typically of 250 mV, internallylimited
to 3.35 V. This voltage is temperature compensated.
This supply point can provide a current of up to typically
3 mA. Its internal consumption stays low (a few 10 nA) as
long as VDD does not exceed 1.5 V (see Fig.6).

An external voltage can be connected to VDD with limited
extra consumptionon VDD(typically 100 µA).This voltage
source should not be below 3.5 V or above 6 V.
VBBand VDDcan supply current to external circuits within
the line limits, taking into account the internal current
consumption.

UPPLY FOR MICROPHONE (PINS MICS AND GNDTX)

S
The MICS output can be used as a supply for an electret

microphone. Its voltage is equal to 2.0 V; it can source a
current of up to 1 mA and has an output impedance equal
to 200 Ω.

FCA049

LN

SLPE

V

BB

V

DD

MICS

0.040.03

OW VOLTAGE BEHAVIOUR

L

I

line

(A)

0.070.06

For line currents below 9 mA, the reference voltage is
automatically adjusted to a lower value; the VBB voltage
follows the SLPE voltage with a difference of 250 mV.
Any excess current available, other than for the purposes
of DC biasing the IC, will be small. At low reference
voltage, the IC has limited performance.

When voltage VBB falls below 2.7 V, it is detected by the
receive dynamic limiter circuit connected to pin LSAOand
is continuously activated, discharging the capacitor
connected to pin DLC. In the DC condition, the
loudspeaker is then automatically disabled below this
voltage.

When VBBfalls below 2.5 V, the TEA1098 is forced into a
lowvoltage mode irrespectiveof the logicinput levels. This
is a speech mode with reduced performance which only
enables the microphone channel (between the MICinputs
and pin LN) and the earpiece amplifier. These two
channels are able to deliver signals for line currents as
small as 3 mA. The HFC input is tied to GND sinking a
current of typically 300 µA.

1999 Oct 14 9

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

8

10

handbook, full pagewidth

I

DD

(pA)

7

10

6

10

5

10

4

10

3

10

2

10

10

1.0

FCA050

1.5 2.5 3.0

2.0
VDD (V)

Fig.6 Current consumption on VDD.

POWER-DOWN MODE (PIN PD)
To reduce consumption during dialling or register recall

(flash), the TEA1098 is provided with a power-down input
(PD). When the voltage on pin PD is LOW, the current
consumption from VBB and VDD is reduced to typically
460 µA. Therefore a capacitor of 470 µF on VBB is
sufficient to power the TEA1098 during pulse dialling or
flash. The PD input has a pull-up structure. In this mode,
the capacitor C

is internally disconnected.

REG

Transmit channels (pins MIC+, MIC−, DTMF,
HFTX and LN)

HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC−

AND LN)

The TEA1098 has symmetrical microphone inputs.
The input impedance between pins MIC+ and MIC− is
typically70 kΩ.The voltage gainbetweenpinsMIC+/MIC−
and LN is set to 44.3 dB. Without output limitation, the
microphone input stage can accept signals of up to
18 mV (RMS) at 2% THD (room temperature).

1999 Oct 14 10

The microphone inputs are biased at a voltage of one
diode.

Automatic gain control is provided for line loss
compensation.

DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
TheTEA1098 has anasymmetrical DTMF input.The input

impedance between DTMF and GND is typically 20 kΩ.
The voltage gain between pins DTMF and LN is set to

25.35 dB. Without output limitation, the input stage can
accept signals of up to 180 mV (RMS) at 2% THD (room
temperature).

When the DTMF amplifier is enabled, dialling tones may
be sent on the line. These tones can be heard in the
earpiece or in the loudspeaker ata lowlevel. This is called
theconfidence tone. Thevoltageattenuation between pins
DTMF and RECO is typically −16.5 dB. This input is
DC biased at 0 V.

The automatic gain control has no effect on these
channels.

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

HANDSFREE TRANSMIT AMPLIFIER (PINS HFTX AND LN)
The TEA1098 has an asymmetrical HFTX input, which is

mainly intended for use in combination with the TXOUT
output. The input impedance between HFTX and GND is
typically 20 kΩ. The voltage gain between
pins HFTX and LN is set to 34.7 dB. Without output
limitation, the input stage can accept signals of up to
95 mV (RMS) at 2% THD (room temperature). The HFTX
input is biased at a voltage of two diodes.

Automatic gain control is provided for line loss
compensation.

Receive channels (pins IR, RECO, GARX and QR)

RX AMPLIFIER (PINS IR AND RECO)
The receive amplifier has one input (IR) which is

referenced to the line. The input impedance between pins
IR and LN is typically 20 kΩ and the DC bias between
these pins is equal to the voltage of one diode. The gain
between pins IR(referenced to LN) and RECO is typically

29.7 dB. Without output limitation, the input stage can
accept signals of up to 50 mV (RMS) at 2% THD (room
temperature).

The receive amplifier has a rail-to-rail output (RECO),
which is designed for use with high ohmic (real) loads of
more than 5 kΩ. This output is biased at a voltage of two
diodes.

Automatic gain control is provided for line loss
compensation.

AGC (pin AGC)

The TEA1098 performsautomatic lineloss compensation,
which fits well with the true line attenuation. The automatic
gain control varies the gain of some transmit and receive
amplifiers in accordance with the DC line current.
The controlrange is6.45 dB for G
and 6.8 dB for G

v(HFTX-LN)

, which corresponds

v(MIC-LN)

andG

v(IR-RECO),

approximately to a line length of 5.5 km for a 0.5 mm
twisted-pair copper cable.

To enable this gain control, the pin AGC must be shorted
to pin LN. The start current forcompensation corresponds
to a line current of typically 23 mA and a stop current of
57 mA. The start current can be increased by connecting
an external resistor between pins AGC and LN. It can be
increased by up to 40 mA (using a resistor of typically
80 kΩ). The start and stop current will be maintained at a
ratio of 2.5. By leaving the AGC pin open, the gain control
is disabled and no line loss compensation occurs.

Handsfree application

Figure 7 shows a loop is formed by the sidetone network
in the line interface section, and by the acoustic coupling
between loudspeaker and microphone in the handsfree
section. A loop-gain of greater than 1 causes howl.
To prevent howl in full duplex applications, the loop-gain
must be set much lower than 1. This is achieved by the
duplex controller which detects the channel with the
‘largest’ signal and controls the gains of the microphone
and the loudspeaker amplifiers so that the sum of their

gains remains constant.
EARPIECE AMPLIFIER (PINS GARX AND QR)
The earpiece amplifier is an operational amplifier which

has an output (QR) and an inverting input (GARX).
Its input signal is fed by a decoupling capacitor from the
receive amplifier output (RECO) to two resistorswhich set
the required gain or attenuation from −3 to +15 dB
compared to the receive gain.

Two external capacitors C
and QR) and C
ensure stability. The C

(connected between GAR and GND)

GARS

GAR

(connected between GAR

GAR

capacitor provides a first-order
low-pass filter. The cut-off frequency corresponds to the
time constant C
C

≥ 10 × C

GARS

× Re2. The relationship

GAR

must be satisfied.

GAR

The earpiece amplifierhas arail-to-rail output(QR) biased
at a voltage of two diodes. It is designed for use with low
ohmic (real) loads of 150 Ω, or capacitive loads of 100 nF
in series with 100 Ω.

1999 Oct 14 11

Thereforein the handsfreeapplication,thecircuit can have
three stable modes:

1. Transmit mode (Tx mode).
The microphone amplifieris atmaximum gain, andthe

loudspeaker amplifier is at minimum gain.

2. Receive mode (Rx mode).
The microphoneamplifier is at minimum gain, and the

loudspeaker amplifier is at maximum gain.

3. Idle mode.
The microphone amplifier and the loudspeaker

amplifier are both midway between maximum and
minimum gain.

The difference between the maximum and minimum gain
is called the switching range.

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

handbook, full pagewidth

acoustic
coupling

telephone

line

sidetone

HYBRID

Fig.7 Handsfree telephone set principles.

HANDSFREE MICROPHONE CHANNEL: PINS TXIN, GATX,
TXOUT AND GNDTX (see Fig.8)

TheTEA1098 has an asymmetricalhandsfreemicrophone
input (TXIN) with an input resistance of 20 kΩ.
The input DCbias is 0 V.Thegain oftheinput stage varies
according to the TEA1098 mode. In Tx mode, it has
maximum gain; in Rx mode, it has minimum gain, and in
Idle mode, it is midway between maximum and minimum
gain.

DUPLEX

CONTROL

MGM299

Switch-over from one mode to the other is smooth and
click-free. The output (TXOUT) is biased at a voltage of
two diodes and has a current capability of 20 µA (RMS).
In Tx mode, the overall gain of the microphone amplifier
(from pins TXIN to TXOUT) can be adjusted from
0 up to 31 dB to suit specific application requirements.
The gain is proportional to the value of R

15.2 dB whenR

is 30.1 kΩ. Withoutoutput limitation,

GATX

GATX

and equals

the microphone input stage can accept signals of up to
18 mV (RMS) at 2% THD (room temperature).

handbook, full pagewidth

V

BB

R

MIC

Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.

C

MIC

31

(28)

TXIN

to

envelope

detector

V I I V

from

voice

switch

GATX

TXOUT

GNDTX

MGL342

Fig.8 Handsfree microphone channel.

1999 Oct 14 12

30
(27)

29
(26)

32
(29)

R

GATX

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

LOUDSPEAKER CHANNEL

Loudspeaker amplifier: pins HFRX, GALS and LSAO

The TEA1098 loudspeaker amplifier has an asymmetrical
inputwith an input resistanceof20 kΩ between pinsHFRX
and GND. It is biased at a voltage of two diodes. Without
output limitation, the input stage can accept signals of up
to 580 mV (RMS) at 2% THD (room temperature).

The gain of the input stage varies according to the
TEA1098 mode. In Rx mode, it has maximum gain; in
Tx mode, it has minimum gain and in Idle mode, it is
halfway between maximum and minimum gain.
Switch-over from one mode to the other is smooth and
click-free.The rail-to-rail outputstageis designedtopower
aloudspeaker connected asasingle-ended load (between
pins LSAO and GND).

handbook, full pagewidth

R

C

C

LSAO

GALS

GALS

(11)

(12)

GALS

14

V

LSAO

15

BB

V I

In Rx mode, the overall gain of the loudspeaker amplifier
can be adjusted from 0 up to 35 dB to suit specific
application requirements. The gain from pin HFRX to pin
LSAO is proportional to the value of R
whenR
is connected in parallel with R

is 255 kΩ.It isrecommended that acapacitor

GALS

to provide a first-order

GALS

and is 28 dB

GALS

low-pass filter.

Volume control: pin VOL

The loudspeaker amplifier gain can be adjusted by the
potentiometer R

. For logarithmic gain control, a linear

VOL

potentiometer canbe used. Each1.9 kΩ increase ofR
resultsin again loss of 3 dB. Themaximum gainreduction
using the volume control is internally limited to the
switching range (see Fig.9).

to

logic

to/from

voice switch

I V

to

envelope

detector

HFRX

5
(1)

VOL

DLC

12

C

DLC

Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.

(8)

DYNAMIC

LIMITER

Fig.9 Loudspeaker channel.

Dynamic limiter: pin DLC

The TEA1098 dynamic limiter prevents clipping of the
loudspeakeroutput stageandprotects theoperationof the
circuit when the supply voltage at VBB falls below 2.7 V.

Hardclipping ofthe loudspeaker outputstage isprevented
by rapidly reducing the gain when the output stage starts
to saturate. The time taken to effect gain reduction
(clipping attack time) is approximately a few milliseconds.
The circuit stays in the reduced gain mode until the peaks
of the loudspeaker signals no longer cause saturation.
The gain of the loudspeaker amplifier then returns to its
normal value within the clipping release time (typically

250 ms). Both attack and release times are proportional to
the value of the capacitor C

The total harmonic distortion of the loudspeaker output
stage, in reduced gain mode, stays below 2% up to 10 dB
(minimum) of input voltage overdrive [providing V
below 580 mV (RMS)].

When the supply voltage falls below an internal threshold
voltage of 2.7 V, the gain of the loudspeaker amplifier is
reduced rapidly (approximately 1 ms). When the supply
voltage rises above 2.7 V, the gain of the loudspeaker
amplifier is increased. By forcing a level lower than 0.2 V
on pin DLC, the loudspeaker amplifier is muted and the
TEA1098 is automatically forced into the Tx mode.

VOLUME

CONTROL

VOL

MGL343

DLC

26
(23)

.

R

VOL

HFRX

is

1999 Oct 14 13

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

DUPLEX CONTROLLER

Signal and noise envelope detectors: pins TSEN, TENV,
TNOI, RSEN, RENVand RNOI

The strength of signal level and background noise in both
channels is monitored by signal envelope detectors and
noise envelope detectors respectively. The outputs of the
envelope detectors provide inputs to the decision logic.
The signal and noise envelope detectors are shown in
Fig.10.

For the transmitchannel, thesignal betweenpin TXIN and
pin TSEN is amplified by 40 dB. For the receive channel,
the signal between pin HFRX and pin RSEN is amplified
by 0 dB.

The signals between pin TSEN and pin TENV, and
between pin RSEN and pin RENV are logarithmically
compressed and buffered.

The sensitivity of the envelope detectors is set by
resistors R

TSEN

and R

. The capacitors connected in

RSEN

series with these two resistors block any DC component
and form a first-order high-pass filter.

In the basic application, (see Fig.19), it is assumed that
V

= 1 mV (RMS) and V

TXIN

and R
capacitors C

TSEN

and R

TSEN

both have a value of 10 kΩ. When

RSEN

and C

RSEN

= 100 mV (RMS) nominal

HFRX

both have a value of 100 nF,

the cut-off frequency is at 160 Hz.
The buffer amplifiers feeding the compressed signals to

pins TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Capacitors
C

TENV

and C

set the timing of both signal envelope

RENV

detectors. In the basic application, the value of both
capacitors is 470 nF. Because of the logarithmic
compression, each6 dB signal increase means an 18 mV
increase on the signal envelopes at pins TENV or RENV
(room temperature). Thus, timings can be expressed in
dB/ms. At room temperature, the 120 µA sourced current
corresponds to a maximum signal envelope rise-slope of
85 dB/ms, which is sufficient to track normal speech
signals. The 1 µA current sunk by pin TENV or pin RENV
corresponds to a maximumfall-slope of0.7 dB/ms. This is
sufficient for a smooth envelope and also eliminates the
effect of echoes on switching behaviour.

handbook, full pagewidth

Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.

DUPLEX CONTROLLER

LOG

from
microphone
amplifier

TSEN

8 (4) 7 (3) 6 (2) 10 (6) 11 (7) 9 (5)

R

TSEN

C

TSEN

LOG

from
loudspeaker
amplifier

TENV TNOI RSEN RENV RNOI

R

C

TENV

C

TNOI

C

Fig.10 Signal and noise envelope detectors.

RSEN

RSEN

C

RENV

to logicto logic

C

RNOI

MGL344

1999 Oct 14 14

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

To determine the noise level, the signals between
pin TENV and pin TNOI, and between pin RENV and
pin RNOI are buffered. The buffers have a maximum
source current of 1 µA and a maximum sink current of
120 µA.

Capacitors C

TNOI

and C

set the timing of both noise

RNOI

envelope detectors. In the basic application, see Fig.19,
the value of both capacitors is 4.7 µF.

At room temperature, the 1 µA sourced current
corresponds to a maximum noise envelope rise-slope of
approximately 0.07 dB/ms which is small enough to track
background noise without being affected by speech
bursts.

handbook, full pagewidth

INPUT SIGNAL

4 mV (RMS)

The 120 µA sink current corresponds to a maximum
fall-slope of approximately 8.5 dB/ms. However, because
the noiseenvelope tracks thefall of the signal envelope, it
will never fall faster than approximately 0.7 dB/ms.
The behaviour of the signal envelope and noise envelope
detectors is illustrated in Fig.11.

MBG354

1 mV (RMS)

SIGNAL ENVELOPE

A: 85 dB/ms
B: 0.7 dB/ms

NOISE ENVELOPE

B: 0.7 dB/ms
C: 0.07 dB/ms

A

C

36 mV

36 mV

Fig.11 Signal and noise envelope waveforms.

Decision logic: pins IDTand SWT

TheTEA1098 selects itsmode of operation(Tx, Rx orIdle)
by comparing the signal and noise envelopes of both
channels. This is executed by the decision logic.
The resulting voltage on pin SWT is the input to the voice
switch.

To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference of

A

C

B

B

time

V

B

B

ENV

− V

= 13 mV. This so called speech/noise

NOI

threshold is implemented in both channels.
The signal on pin TXIN contains both speech and the

acoustically coupled signal from the loudspeaker.
In Rx mode, theloudspeaker signal overrides the speech.
Therefore, the signal envelope on pin TENV consists
mainly of the loudspeaker signal. To correct this, an
attenuator is connected between pin TENV and the
TENV/RENV comparator. Its attenuation is equal to that
applied to the microphone amplifier.

1999 Oct 14 15

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

Whena dialtone is present on theline, withoutmonitoring,
it would be recognized as noise because it has a constant
amplitude. This would cause the TEA1098 to go into Idle
mode, and the user would hear the dial tone fade away.
To prevent this, a dial tone detector monitorsinput signals
between pins HFRX and GND. In standard applications,
the detector does not consider a signal level above
25 mV (RMS) to be noise. This level is proportional to the
value of R

. Similarly, a transmit detector monitors

RSEN

input signals between pins TXIN and GNDTX. Instandard
applications the detector does not consider a signal level
above 0.75 mV (RMS) to be noise. This level is
proportional to the value of R

handbook, full pagewidth

(3) 7
(2) 6

TSEN.

DUPLEX CONTROLLER

TENV
TNOI

13 mV

ATTENUATOR

Figure 12 shows that the output of the decision logic is a
current source. The logic table shows the relationship
between the input levels and the value of the current
source. The current source can charge or discharge the
capacitor C

at a switch-over current of 10 µA. If the

SWT

current is zero, the voltage on pin SWT becomes equal to
the voltage on pin IDT via the high-ohmic resistor R

IDT

(idling). The resulting voltage difference between pins
SWT and IDT can vary between −400 and +400 mV and
determines the TEA1098 mode (see Table 1).

28 (25)

IDT

V

ref

(1)

LOGIC

SWT

27 (24)

R

IDT

XX11−10 µA

RENV

(7) 11

RNOI

(5) 9

13 mV

V

from logic

from dynamic

(1) When DLC < 0.2 V, −10 µA is forced.
Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.

dt

limiter

X10X

1X0X

XX10 0

000X 0

+10 µA
+10 µA

Fig.12 Decision logic.

MGL345

C

SWT

1999 Oct 14 16

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

Table 1 TEA1098 modes

V

− V

SWT

(mV) MODE

IDT

< −180 Tx mode
0 Idle mode
> 180 Rx mode

The switch-over timing can be set by capacitor C
the Idle mode timing can be set by capacitor C
resistor R
is 220 nF and R

.In the basicapplication given inFig.19,C

IDT

is 2.2 MΩ. This enables a switch-over

IDT

SWT

SWT

and

and

SWT

time from Tx to Rx mode or vice-versa of approximately
13 ms (580 mV swing on pin SWT). The switch-over time
from Idle mode to Tx or Rx mode is approximately 4 ms
(180 mV swing on pin SWT).

The switch-over time, from Rx or Tx mode to Idle mode is
equal to 4 × R

IDTCSWT

and is approximately 2 seconds

(Idle mode time).
The DLC input overrides the decision logic. When the

voltage on pin DLC falls below 0.2 V, the capacitor C

SWT

is discharged by 10 µA which selects Tx mode.

Voice switch: pins STAB and SWR

Figure 13 is a diagram of the voice switch. With a voltage
onpin SWT, the TEA1098voiceswitchregulates the gains

of the transmitand thereceive channelsso thatthe sum of
both is held constant.

In Tx mode, the microphone amplifier is at maximum gain
and the loudspeaker amplifier is at minimum gain.
In Rx mode, their gains are the opposite. In Idle mode,
both microphone and loudspeaker amplifiers are midway
between maximum and minimum gain.

The difference between the maximum and minimum gain
is called the switching range. This range is determined by
the ratio of resistors R

SWR

to R

between 0 and 52 dB. Resistor R

and is adjustable

STAB

should be 3.65 kΩ

STAB

which sets an internally used reference current. In the
basic application diagram (Fig.19), resistor R

SWR

is
365 kΩ which results in a switching range of 40 dB.
The switch-over behaviour is illustrated in Fig.14.

In Rx mode, the gain of the loudspeaker amplifier can be
reduced using the volume control. At the same time, the
gainof the microphoneamplifierincreases, sincethevoice
switch keeps the sum of the gains constant (see dashed
curves in Fig.14). However, in Tx mode, the volume
control has no effect on the gains of the microphone or
loudspeakeramplifiers.Consequently,theswitchingrange
is reduced when the volume is reduced. At maximum
reduction of volume, the switching range is 0 dB.

lfpage

(1) C = constant.
Pin numbers in parenthesis apply to the TEA1098H.
Pin numbers not in parenthesis apply to the TEA1098TV.

DUPLEX CONTROLLER

to

microphone

amplifier

G

vtx

VOICE SWITCH

from

volume

control

loudspeaker

+ G

vrx =

to

amplifier

from

SWT

C

R

24 (21)

STAB

(1)

25 (22)

SWR

MGL346

STAB

R

SWR

Fig.13 Voice switch.

1999 Oct 14 17

handbook, halfpage

G

G

vrx

vtx,

(10 dB/div)

−400 −200 0 +400+200
SWT

− V

MGM305

IDT

idle

Tx mode Rx mode

G

vtx

G

vrx

mode

V

Fig.14 Switch-over behaviour.

(mV)

R

VOL
(Ω)

11400
7600
3800
0

0
3800
7600
11400

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

Logic inputs
Table 2 Selection of transmit and receive channels for 5 different application modes

LOGIC INPUTS

FEATURES APPLICATION EXAMPLES

PD HFC MUTE

0 X X flash, DC dialling
1 0 0 DTMF to LN; DTMF to RECO; QR and MICS

DTMF dialling in handset mode

are active

1 0 1 MICS to LN; IR to RECO; QR and MICS are

handset conversation

active

1 1 0 DTMF to LN; DTMF to RECO; HFRX to LSAO;

DTMF dialling in handsfree

QR and MICS are active

1 1 1 TXIN to TXOUT; HFTX to LN; IR to RECO;

handsfree conversation mode

HFRX to LSAO; MICS is active

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); all DC levels are referenced to GND.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

positive continuous line voltage −0.4 +12 V
repetitive line voltage during switch-on or line

−0.4 +13.2 V

interruption

V

n(max)

I

line

P

tot

maximum voltage on pins REG, SLPE, IR and AGC −0.4 VLN+ 0.4 V
maximum voltage on all other pins except V

DD

−0.4 VBB+ 0.4 V
maximum line current − 130 mA
total power dissipation T

amb

=75°C
TEA1098TV (see Fig.15) − 400 mW
TEA1098H (see Fig.16) − 720 mW
TEA1098UH; note 1 −−

T

stg

T

amb

T

j

IC storage temperature −40 +125 °C
ambient temperature −25 +75 °C
junction temperature − 125 °C

Note

1. Mostly dependent on the maximum required ambienttemperature, on the voltage between LN and SLPEand on the
thermal resistance between die ambient temperature. This thermal resistance depends on the application board
layoutand onthe materials used.Figure 17 showsthe safe operating area versusthis thermal resistance for ambient
temperature T

amb

=75°C

1999 Oct 14 18

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

160

handbook, full pagewidth

I

line

(mA)

120

80

40

0

3.5 9.5

FCA028

(1)

(2)

(3)
(4)

(5)

(6)

7.55.5

LINE T

11.5

(°C) P

amb

V

SLPE

(V)

(mW)

tot

13.5

(1) 25 800
(2) 35 720
(3) 45 640
(4) 55 560
(5) 65 480
(6) 75 400

Fig.15 Safe operating area (TEA1098TV).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air

TEA1098TV 115 K/W
TEA1098H 63 K/W
TEA1098UH tbf by customer

in application

1999 Oct 14 19

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

160

handbook, full pagewidth

I

line

(mA)

120

80

40

0

3 91011

FCA029

(1)

(2)

(3)

(4)

(5)

75864

LINE T

V

SLPE

(°C) P

amb

(V)

(mW)

tot

12

(1) 35 1304
(2) 45 1158
(3) 55 1012
(4) 65 866
(5) 75 720

Fig.16 Safe operating area (TEA1098H).

1999 Oct 14 20

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

160

handbook, full pagewidth

I

line

(mA)

120

80

40

0

246

FCA079

(1)

(2)

(3)

(4)

(5)
(6)

(7)

810

LINE R

V

SLPE

(V)

th(j-a)

(1) 40
(2) 50
(3) 60
(4) 75
(5) 90
(6) 105
(7) 130

12

(K/W)

Fig.17 Safe operating area at T

1999 Oct 14 21

=75°C (TEA1098UH).

amb

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

CHARACTERISTICS

I

= 15 mA; R

line

TEA1098UH; AGC pin connected to LN;
all DC levels are referenced to GND; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

SLPE

=20Ω; Z

= 600 Ω; f = 1 kHz; T

line

PD = HIGH; HFC = LOW; MUTE = HIGH; measured according to test circuits;

=25°C for TEA1098H and TEA1098TV; Tj=25°C for

amb

INE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND V

L
V

V

I

line

SLPE

BB

stabilized voltage between
SLPE and GND

regulated supply voltage for
internal circuitry

I

= 15 mA 3.4 3.7 4 V

line

I

= 70 mA 5.7 6.1 6.5 V

line

I

= 15 mA 2.75 3.0 3.25 V

line

I

= 70 mA 4.9 5.3 5.7 V

line

line current for voltage increase start current − 18 − mA

stop current − 45 − mA

∆V

SLPE(T)

stabilized voltage variation with

T

= −25 to +75 °C −±60 − mV

amb

temperature referenced to 25 °C

∆V

BB(T)

regulated voltage variation with

T

= −25 to +75 °C −±30 − mV

amb

temperature referenced to 25 °C

I

BB

current available on pin V

BB

in speech mode − 11 − mA
in handsfree mode − 9 − mA

V

LN

line voltage I

=1mA − 1.55 − V

line

I

=4mA − 2.35 − V

line

I

= 15 mA 3.7 4.0 4.3 V

line

I

= 130 mA − 8.7 9.5 V

line

SUPPLY FOR PERIPHERALS (PIN VDD)
V

DD

regulated supply voltage on VDDVBB> 3.35 V + 0.25 V

(typ.)
otherwise − V

∆V

DD(T)

regulated voltage variation with
temperature referenced to 25 °C

T

= −25 to +75 °C;

amb

VBB> 3.35 V + 0.25 V
(typ.)

I

DD

current consumption on V

DD

in trickle mode;
I

= 0 mA; VDD= 1.5 V;

line

VBB discharging
V

> 3.35 V 60 100 −µA

DD

I

DD(o)

current available for peripherals VDD= 3.35 V −−3 − mA
SUPPLY FOR MICROPHONE (PIN MICS)
V

MICS

I

MICS

POWER-DOWN INPUT (PIN PD)

V

IL

V

IH

I

PD

supply voltage for a microphone − 2.0 − V

current available on MICS −− −1mA

LOW-level input voltage −0.4 − +0.3 V

HIGH-level input voltage 1.8 − VBB+ 0.4 V

input current −−3 −6 µA

BB

)

3.1 3.35 3.6 V

− 0.25 − V

BB

−±30 − mV

− 15 150 nA

1999 Oct 14 22

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

BB(PD)

Preamplifier inputs (pins MIC+, MIC−, IR, DTMF, TXIN, HFTX and HFRX)

 input impedance

Z

i(MIC)

Z

 input impedance between pins

i(IR)

Z

Z

Z

Z

 input impedance between pins

i(DTMF)

 input impedance between pins

i(TXIN)

 input impedance between pins

i(HFTX)

 input impedance between pins

i(HFRX)

TX amplifiers

current consumption on V

during power-down phase

differential between pins
MIC+ and MIC−

single-ended between pins
MIC+/MIC− and GNDTX

IR and LN

DTMF and GND

TXIN and GNDTX

HFTX and GND

HFRX and GND

BB

PD = LOW − 460 −µA

− 70 − kΩ

− 35 − kΩ

− 20 − kΩ

− 20 − kΩ

− 20 − kΩ

− 20 − kΩ

− 20 − kΩ

TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC− AND LN)
G

v(MIC-LN)

voltage gain from pin

V

= 5 mV (RMS) 43.3 44.3 45.3 dB

MIC

MIC+/MIC− to LN
∆G

v(f)

gain variation with frequency

f = 300 to 3400 Hz −±0.25 − dB

referenced to 1 kHz
∆G

v(T)

gain variation with temperature

T

= −25 to +75 °C −±0.25 − dB

amb

referenced to 25 °C
CMRR common mode rejection ratio − 80 − dB
THD total harmonic distortion at LN VLN= 1.4 V (RMS) −− 2%

I

line

= 4 mA;

−− 10 %

VLN= 0.12 V (RMS)

V

no(LN)

noise output voltage at pin LN;

pins MIC+/MIC− shorted

psophometrically weighted
(p53 curve)

−−77.5 − dBmp

through 200 Ω
∆G

v(mute)

gain reduction if not activated see Table 2 60 80 − dB
DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
G

v(DTMF-LN)

voltage gain from pin

V

= 50 mV (RMS) 24.35 25.35 26.35 dB

DTMF

DTMF to LN
∆G

v(f)

gain variation with frequency

f = 300 to 3400 Hz −±0.25 − dB

referenced to 1 kHz
∆G

v(T)

gain variation with temperature

T

= −25 to +75 °C −±0.25 − dB

amb

referenced to 25 °C
∆G

v(mute)

gain reduction if not activated see Table 2 60 80 − dB

1999 Oct 14 23

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

v(DTMF-RECO)

TX AMPLIFIER USING HFTX (PINS HFTX AND LN)
G

v(HFTX-LN)

voltage gain from pin DTMF to

RECO

voltage gain from pin HFTX toLNV

V

= 50 mV (RMS) −−16.5 − dB

DTMF

= 15 mV (RMS) 33.5 34.7 35.9 dB

HFTX

∆G

v(f)

gain variation with frequency

referenced to 1 kHz
∆G

v(T)

gain variation with temperature

referenced to 25 °C
THD total harmonic distortion at LN V
V

HFTX(rms)

maximum inputvoltage at HFTX

(RMS value)
V

no(LN)

noise output voltage at pin LN;

pin HFTX shorted to GND

through 200 Ω in series with

10 µF
∆G

v(mute)

gain reduction if not activated see Table 2 60 80 − dB

RX amplifiers

RX AMPLIFIERS USING IR (PINS IR AND RECO)
G

v(IR-RECO)

voltage gain from pin IR

(referenced to LN) to RECO
∆G

v(f)

gain variation with frequency

referenced to 1 kHz
∆G

v(T)

gain variation with temperature

referenced to 25 °C
V

IR(rms)(max)

maximum input voltage on IR

(referenced to LN) (RMS value)
V

RECO(rms)(max)

maximum output voltage on

RECO (RMS value)
V

no(RECO)(rms)

noise output voltage at pin

RECO; pin IR is an open-circuit

(RMS value)
∆G

v(mute)

gain reduction if not activated see Table 2 60 80 − dB
RX EARPIECE AMPLIFIER (PINS GARX AND QR)
∆G

v(RECO-QR)

gain voltage rangebetween pins

RECO and QR
V

QR(rms)(max)

maximum output voltage on QR

(RMS value)
V

no(QR)(rms)

noise output voltage at pin QR;

pin IR is an open-circuit

(RMS value)

f = 300 to 3400 Hz −±0.25 − dB

T

= −25 to +75 °C −±0.25 − dB

amb

= 1.4 V (RMS) −− 2%

LN

I

= 70 mA; THD = 2% − 95 − mV

line

psophometrically weighted

−−77.5 − dBmp

(p53 curve)

VIR= 8 mV (RMS) 28.7 29.7 30.7 dB

f = 300 to 3400 Hz −±0.25 − dB

T

= −25 to +75 °C −±0.3 − dB

amb

I

= 70 mA; THD = 2% − 50 − mV

line

THD = 2% 0.75 0.9 − V

psophometrically weighted

−−88 − dBVp

(p53 curve)

−3 − +15 dB

sine wave drive;

0.75 0.9 − V

RL= 150 Ω; THD < 2%
G

v(QR)

= 0 dB;

−−88 − dBVp
psophometrically weighted
(p53 curve)

1999 Oct 14 24

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Automatic Gain Control (pin AGC)

∆G

v(trx)

gain control range for transmit
and receive amplifiers affected
by the AGC; with respect to
I

=15mA

line

I

start

highestline currentformaximum
gain

I

stop

lowest line current for maximum
gain

Logic inputs (pins HFC and MUTE)

V

IL

V

IH

I

i

LOW-level input voltage −0.4 − +0.3 V
HIGH-level input voltage 1.8 − VBB+ 0.4 V
input current VBB= 3.0 V

for pin HFC − 36µA
for pin MUTE −−3 −12 µA

Handsfree mode (HFC = HIGH)

I

= 70 mA; G

line

G

v(IR-RECO)

I

= 70 mA for G

line

v(MIC-LN)

v(HFTX-LN)

;

5.45 6.45 7.45 dB

5.8 6.8 7.8 dB

− 23 − mA

− 57 − mA

HF MICROPHONE AMPLIFIER (PINS TXIN, TXOUT AND GATX)
G

v(TXIN-TXOUT)

∆G

v

∆G

v(f)

voltage gain from pin TXIN to
TXOUT

voltage gain adjustment with
R

GATX

gain variation with frequency

V

= 3 mV (RMS);

TXIN

R

= 30.1 kΩ

GATX

f = 300 to 3400 Hz −±0.1 − dB

referenced to 1 kHz

∆G

v(T)

gain variation with temperature

T

= −25 to +75 °C −±0.15 − dB

amb

referenced to 25 °C

V

no(TXOUT)(rms)

noise output voltage at pin
TXOUT; pin TXIN is shorted

psophometrically weighted
(p53 curve)

through 200 Ω in series with
10 µF to GNDTX (RMS value)

∆G

v(mute)

gain reduction if not activated see Table 2 60 80 − dB
HF LOUDSPEAKER AMPLIFIER (PINS HFRX, LSAO, GALS AND VOL)
G

v(HFRX-LSAO)

∆G

v

∆G

v(f)

voltage gain from pin HFRX to

LSAO

voltage gain adjustment with

R

GALS

gain variation with frequency

V

= 30 mV (RMS);

HFRX

R

= 255 kΩ;

GALS

I

=70mA

line

f = 300 to 3400 Hz −±0.3 − dB

referenced to 1 kHz
∆G

v(T)

gain variation with temperature

T

= −25 to +75 °C −±0.3 − dB

amb

referenced to 25 °C
∆G

v(vol)

voltage gain variation related to

∆R

= 1.9 kW

VOL

when total attenuation
does not exceed the
switching range

12.7 15.2 17.7 dB

−15 − +16 dB

−−101 − dBmp

25.5 28 30.5 dB

−28 − +7 dB

−−3 − dB

1999 Oct 14 25

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

HFRX(rms)(max)

V

no(LSAO)(rms)

∆G

v(mute)

V

LSAO(rms)

I

LSAO(max)

DYNAMIC LIMITER (PINS LSAO AND DLC)
t

att

t

rel

THD total harmonic distortion V

V

BB(th)

MUTE RECEIVE (PIN DLC)
V

DLC(th)

I

DLC(th)

∆G

vrx(mute)

TX AND RX ENVELOPE AND NOISE DETECTORS (PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI)

maximum input voltage at pin

HFRX (RMS value)

I

=70mA;

line

R

=33kΩ; for 2%

GALS

− 580 − mV

THD in the input stage

noise output voltage at pin

LSAO; pin HFRX is open-circuit

psophometrically weighted
(p53 curve)

−−79 − dBVp

(RMS value)

gain reduction if not activated see Table 2 60 80 − dB

output voltage (RMS value) IBB= 0 mA; IDD=1mA

=18mA − 0.9 − V

I

line

I

=30mA − 1.3 − V

line

I

>50mA − 1.6 − V

line

maximum output current at pin

150 300 − mA

LSAO (peak value)

attack time when V

jumps from

HFRX

−− 5ms

20 to 20 mV + 10 dB
when V

V

BB(th)

release time when V

jumps below

BB

jumps from

HFRX

− 1 − ms

− 100 − ms

20 mV + 10 dB to 20 mV

= 20 mV + 10 dB;

HFRX

t>t

att

− 12%

VBB limiter threshold − 2.7 − V

threshold voltage required on

−0.4 − +0.2 V
pin DLC to obtain mute receive
condition

threshold current sourced by pin

V

= 0.2 V − 100 −µA

DLC

DLC in mute receive condition
voltage gain reduction in mute

V

= 0.2 V 60 80 − dB

DLC

receive condition

Preamplifiers

G

v(TSEN)

voltage gain from pin
TXIN to TSEN

G

v(RSEN)

voltage gain from pin
HFRX to RSEN

Logarithmic compressor and sensitivity adjustment

∆V

det(TSEN)

sensitivity detection on pin

I

= 0.8 to 160 µA − 18 − mV

TSEN

TSEN; voltage change on pin
TENVwhen doublingthe current
from TSEN

1999 Oct 14 26

− 40 − dB

− 0 − dB

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆V

det(RSEN)

Signal envelope detectors

I

source(ENV)

I

sink(ENV)

∆V

ENV

Noise envelope detectors

I

source(NOI)

I

sink(NOI)

∆V

NOI

DIAL TONE DETECTOR
V

HFRX(th)(rms)

TX LEVEL LIMITER
V

TXIN(th)(rms)

DECISION LOGIC (PINS IDT AND SWT)

sensitivity detection on pin
RSEN; voltage change on pin
RENV when doubling the
current from RSEN

maximum current sourced from
pin TENV or RENV

maximum current sunk by pin
TENV or RENV

voltage difference between pins
RENV and TENV

maximum current sourced from
pin TNOI or RNOI

maximum current sunk by pin
TNOI or RNOI

voltage difference between pins
RNOI and TNOI

threshold level at pin HFRX
(RMS value)

threshold level at pin TXIN
(RMS value)

I

= 0.8 to 160 µA − 18 − mV

RSEN

− 120 −µA

−1.25 −1 −0.75 µA

when 10 µA is sourced

−±3 − mV

from both RSEN and
TSEN; signal detectors
tracking; note 1

0.75 1 1.25 µA

−−120 −µA

when 5 µA is sourced from

−±3 − mV

both RSEN and TSEN;
noise detectors tracking;
note 1

R

=10kΩ−25 − mV

RSEN

R

=10kΩ−0.75 − mV

TSEN

Signal recognition

∆V

Srx(th)

threshold voltage between pins

V

HFRX<VHFRX(th)

RENV and RNOI to switch-over
from receive to Idle mode

∆V

Stx(th)

threshold voltage between pins

V

TXIN<VTXIN(th)

TENV and TNOI to switch-over
from transmit to Idle mode

Switch-over

I

source(SWT)

current sourced from pin SWT
when switching to receive mode

I

sink(SWT)

current sunk by pin SWT when
switching to transmit mode

I

idle(SWT)

current sourced from pinSWT in
Idle mode

1999 Oct 14 27

; note 2 − 13 − mV

; note 2 − 13 − mV

7.5 10 12.5 µA

−12.5 −10 −7.5 µA

− 0 −µA

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VOICE SWITCH (PINS STAB AND SWR)
SWRA switching range − 40 − dB

∆SWRA switching range adjustment with R

365 kΩ

 voltage gain variation from

∆G

v

transmit or receive mode to Idle
mode

G

tr

gain tracking (G

vtx+Gvrx

) during
switching, referenced to Idle
mode

Notes

1. Corresponds to ±1 dB tracking.

2. Corresponds to 4.3 dB noise/speech recognition level.

referenced to

SWR

−40 − +12 dB

− 20 − dB

− 0.5 − dB

1999 Oct 14 28

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1999 Oct 14 29

ook, full pagewidth

TEST AND APPLICATION INFORMATION

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

Z

exch

600 Ω

C

exch

100 µF

V

HFTX

i = 15 mA
J_line

V

d = 10 V

Z

imp

620 Ω

D

z

C

emc

10 nF

C

imp

100 µF

C

4.7 µF

V

MIC

C

HFTX

100 nF

R

30.1 kΩ

C

TXIN

100 nF

C

R

TSEN

10 kΩ
C

TSEN

100 nF

DTMF

100 nF

C
470 nF

V

TXIN

V

DTMF

V

100 nF

MICS

GATX

TENV

IR

C

IR

R
200 Ω

TXOUT

17 (14) 19 (16) 21 (18) 18 (15) 13 (10) 22 (19)

IR

20 (17)

MICS

23 (20)

MIC+

34 (31)

MIC

MIC−

33 (30)

HFTX

39 (36)

29 (26)

GATX

30 (27)

TXIN

31 (28)

DTMF

35 (32)

TSEN

8 (4)

TENV

7 (3)

TNOI

6 (2)

16 (13) 32 (29) 24 (21) 25 (22) 26 (23) 12 (8) 27 (24)

GND GNDTX

C

TNOI

4.7 µF

C

R

SLPE REG AGC LN

SLPE

20 Ω

REG

4.7 µF

TEA1098

STAB

R

STAB

3.65 kΩ

SWR VOL DLC SWT

R

SWR

365 kΩ

R

VOL
0 to
22 kΩ

C

VBB

470 µF

V

BB

C

DLC

470 nF

C

VDD

47 µF

V

DD

(38) 1

(37) 40

(39) 2

(33) 36

(34) 37

(35) 38

(1) 5

(11) 14

(12) 15

(6) 10
(7) 11

(5) 9

(25) 28

C

SWT

220 nF

PD
HFC
MUTE

QR

GARX

100 kΩ

RECO

HFRX

GALS

LSAO

RSEN
RENV
RNOI
IDT

R

e1

R

IDT

2.2 MΩ

C
100 nF

C

HFRX

100 nF

R
255 kΩ

rxe

GALS

C

GAR

100 pF

C

RNOI

4.7 µF

C

GARS

1 nF

V

HFRX

R

e2

100 kΩ

C

GALS

150 pF

R

RSEN

10 kΩ

C

RENV

470 nF

R

QR

150 Ω

C

4.7 µF

C

LSAO

220 µF

R

LSAO

50 Ω

C

RSEN

100 nF

QR

Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.

Fig.18 Test configuration.

MGL440

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1999 Oct 14 30

book, full pagewidth

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

A

B

D2 D3

D1 D4

handset

micro

handsfree

micro

D
Vd =
10 V

MICS

from

MICS

HFTX

C
470 nF

R

8.2 kΩ

TENV

R

ast3

392 Ω

C

IR

100 nF

C
10 µF

tx3

C

bal

220 nF

SLPE

C

REG

4.7 µF

STAB

R

STAB

3.65 kΩ

TEA1098

SWR VOL DLC SWT

R

SWR

365 kΩ

R
20 Ω

SLPE REG AGC LN

17 (14) 19 (16) 21 (18) 18 (15) 13 (10) 22 (19)

IR

20 (17)

MICS

23 (20)

MICS

MIC+

34 (31)

MIC−

33 (30)

HFTX

39 (36)

TXOUT

29 (26)

GATX

30 (27)

TXIN

31 (28)

DTMF

35 (32)

TSEN

8 (4)

TENV

7 (3)

TNOI

6 (2)

16 (13) 32 (29) 24 (21) 25 (22) 26 (23) 12 (8) 27 (24)

GND GNDTX

C

TNOI

4.7 µF

R

VOL
0 to
22 kΩ

C
470 µF

V

BB

VBB

C

DLC

470 nF

(38) 1

(37) 40

(39) 2

(33) 36

(34) 37

(35) 38

(1) 5

(11) 14

(12) 15

(6) 10

(7) 11

(5) 9

(25) 28

C
47 µF

V

DD

C

SWT

220 nF

VDD

PD
HFC
MUTE
QR

GARX

RECO

HFRX
GALS

LSAO
RSEN
RENV
RNOI
IDT

R

GALS

255 kΩ

R

IDT

2.2 MΩ

C
100 pF

R

e1

100 kΩ
C

rxe

100 nF

C

HFRX

100 nF

C

150 pF

C

4.7 µF

from

microcontroller

R

GAR

100 kΩ

GALS

C

RNOI

470 nF

C
10 µF

e2

RENV

QR

C
1 nF

C

LSAO

220 µF

GARS

R

RSEN

10 kΩ

C
100 nF

RSEN

R

bal2

820 Ω

R

Z

C

emc

10 nF

R
1 kΩ

R
1 kΩ

C

MICB

22 nF

MICP

MICM

620 Ω

C

tx2

22 nF

C

tx1

22 nF

C

100 nF

C
22 µF

z

C

MICH

33 nF

R

BMICS

2 kΩ

imp

imp

TXIN

R
10 kΩ

C
100 nF

R

15 kΩ

R

15 kΩ

TSEN

TSEN

130 Ω

R

3.92 kΩ

R
130 kΩ

tx2

tx1

C

R

30.1 kΩ

C

bal1

ast2

ast1

100 nF

GATX

DTMF

100 nF

Pin numbers in parenthesis apply to the TEA1098H. Pin numbers not in parenthesis apply to the TEA1098TV.

Fig.19 Basic application diagram.

MGL316

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

BONDING PAD LOCATIONS FOR TEA1098UH

All x/y coordinates represent the position of the centre of
the pad (in µm) with respect to the origin (x/y = 0/0) of the

2

die (see Fig.20). The size of all pads is 80 µm

.

COORDINATES

SYMBOL PAD

XY

HFRX 1 81.5 3597.5
TNOI 2 81.5 3402.2
TENV 3 81.5 3187
TSEN 4 81.5 2964.2
RNOI 5 81.5 2746
RSEN 6 81.5 2511.8
RENV 7 81.8 2282.8
DLC 8 81.5 1972.8
n.c. 9 81.5 1499.8
V

BB

10 81.5 1023
GALS 11 81.5 589.5
LSAO 12 129.2 100.8
n.c. 13 345.2 100.8
GND 14 805.5 100.8
GND 15 1069 100.8
SLPE 16 1299.2 100.8
LN 17 1488.5 100.8
REG 18 1648.8 100.8
IR 19 1832.8 100.8
AGC 20 2028 100.8
V

DD

21 2195 101
MICS 22 2393.5 101.5

SYMBOL PAD

COORDINATES

XY

STAB 23 2586.5 101.5
SWR 24 2778.8 101.5
VOL 25 2969 144
SWT 26 2969 379.8
IDT 27 2969 681.5
TXOUT 28 2969 1086
GATX 29 2969 1342.2
TXIN 30 2969 1961.2
GNDTX 31 2969 2152
GNDTX 32 2968.8 2344.2
MIC− 33 2968.8 2522.8
MIC+ 34 2968.5 2837.2
DTMF 35 2968.5 3062.5
QR 36 2968.5 3499.8
GARX 37 2890 3712.8
RECO 38 2572 3712.8
HFTX 39 2290.8 3712.8
HFC 40 2051.8 3712.8
PD 41 1798.2 3712.8
MUTE 42 1544.8 3712.8
n.c. 43 1296.8 3712.8
n.c. 44 861 3712.8
n.c. 45 657.2 3712.8
n.c. 46 459.5 3712.8
n.c. 47 255 3712.8

1999 Oct 14 31

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

handbook, halfpage

47 46 45 44 43 42 41 40 39 38 37

1
2

3
4
5
6
7

8

9

10

11

x

13 14 15 16 17 18 19 20 21 22 23 24

12

0

0

y

TEA1098UH

Die Identifier

Fig.20 TEA1098UH bonding pad locations.

FCA078

36

35
34

33
32
31
30

R6621R

29
28

27
26

25

1999 Oct 14 32

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

PACKAGE OUTLINES

VSO40: plastic very small outline package; 40 leads

D

y

Z

40

pin 1 index

SOT158-1

E

c

H

E

21

A

2

A

1

L

p

L

A

X

v M

A

Q

(A )

A

3

θ

1

e

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE

VERSION

SOT158-1

A

max.

2.70

0.11

1

0.3

0.1

0.012

0.004

A2A

2.45

2.25

0.096

0.089

IEC JEDEC EIAJ

3

0.25

0.010

b

p

0.42

0.30

0.017

0.012

0.22

0.14

0.0087

0.0055

UNIT A

inches

Notes

1. Plastic or metal protrusions of 0.4 mm maximum per side are not included.

2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.

(1)E(2)

cD

15.6

15.2

0.61

0.60

REFERENCES

20

w M

b

p

scale

eHELLpQywv θ

7.6

0.762 2.25

7.5

0.30

0.03 0.089

0.29

12.3

11.8

0.48

0.46

1.7

1.5

0.067

0.059

detail X

1.15

0.2

1.05

0.045

0.008 0.004

0.041

EUROPEAN

PROJECTION

0.1 0.1

0.004

(1)

Z

0.6

0.3

0.024

0.012

ISSUE DATE

92-11-17
95-01-24

o

7

o

0

1999 Oct 14 33

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm

c

y

X

A

33 23

34

pin 1 index

44

1

22

Z

E

e

H

E

E

w M

b

p

12

11

A

2

A

A

1

detail X

SOT307-2

(A )

3

θ

L

p

L

w M

b

e

p

D

H

D

Z

D

B

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT A1A2A3b

max.

0.25

mm

2.10

0.05

1.85

1.65

0.25

cE

p

0.40

0.25

0.20

0.14

(1)

(1) (1)(1)

D

10.1

9.9

eH

10.1

9.9

12.9

0.8 1.3

12.3

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE

VERSION

IEC JEDEC EIAJ

REFERENCES

SOT307-2

1999 Oct 14 34

v M

H

D

v M

A

B

E

12.9

12.3

LL

p

0.95

0.55

0.15 0.10.15

EUROPEAN

PROJECTION

Z

D

1.2

0.8

Zywv θ

E

o

1.2

10

o

0.8

0

ISSUE DATE

95-02-04
97-08-01

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

SOLDERING
Introduction to soldering surface mount packages

Thistext gives averybrief insight toa complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages.Wave solderingis notalways suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuitboardby screenprinting,stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
forsurface mount devices(SMDs)or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackages with leadsonfour sides, thefootprintmust
be placedat a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wavewith high upwardpressure followed bya
smooth laminar wave.

1999 Oct 14 35

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

WAVE REFLOW

(1)

BGA, LFBGA, SQFP, TFBGA not suitable suitable

SOLDERING METHOD

HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not suitable

(3)

PLCC

, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

(1)

(3)(4)
(5)

suitable

suitable
suitable

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is onlysuitable for SSOP and TSSOPpackages with a pitch (e) equal toor larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

1999 Oct 14 36

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

BARE DIE DISCLAIMER

All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of
ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately
indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern
processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no
control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors
assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of
the die. It is the responsibility of the customer to test and qualify their application in which the die is used.

1999 Oct 14 37

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

NOTES

1999 Oct 14 38

Philips Semiconductors Product specification

Speech and handsfree IC TEA1098

NOTES

1999 Oct 14 39

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PTPhilips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

1999

Internet: http://www.semiconductors.philips.com

68

Printed in The Netherlands 465002/04/pp40 Date of release: 1999 Oct 14 Document order number: 9397 750 06403