Datasheet TEA1098A Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1098A

Speech and handsfree IC

Preliminary specification
File under Integrated Circuits, IC03

2000 Mar 21

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

FEATURES
Line interface

• Low DC line voltage

• Voltage regulator with adjustable DC voltage

• Symmetrical high impedance inputs (70 kΩ) for

dynamic, magnetic or electret microphones

• DTMF input with confidence tone on earphone and/or
loudspeaker

• Earphone amplifier for dynamic, magnetic or
piezo-electric earpieces(with externally adjustable gain)

• Digital volume control on earphone amplifier (4 steps)

• Automatic Gain Control (AGC) for true line loss

compensation

• Microphone mute

• Key tone mode.

Supplies

• Provides a strong 3.35 V regulated supply for
microcontroller or dialler

• Provides filtered power supply, optimized according to
line current

• Filtered 2.0 V power supply output for electret
microphone

• PD logic input for power-down.

• Duplex controller consisting of:

– signaland noise envelopemonitorsfor bothchannels

(with adjustable sensitivities and timing)

– decision logic (with adjustable switch-over and Idle

mode timing)

– voice switch control (with adjustable switching range

and constant sum of gain during switching).

APPLICATIONS

• Line powered telephone sets.

GENERAL DESCRIPTION

The TEA1098A is an analog bipolar circuit dedicated for
telephonyapplications. It includesa line interface,handset
(HS) microphone and earpiece amplifiers, handsfree (HF)
microphone and loudspeaker amplifiers and a duplex
controllerwith signal andnoisemonitors onbothchannels.
Digital volume control is available both on earphone and
loudspeaker amplifiers.

This IC provides a 3.35 V strong supply for a
microcontroller and a 2.0 V filtered voltage supply for an
electret microphone.

Handsfree

• Asymmetrical high input impedance for electret
microphone

• Loudspeaker amplifier with single-ended rail-to-rail
output and externally adjustable gain

• Dynamic limiter on loudspeaker amplifier to prevent
distortion

• Digitalvolume controlon loudspeakeramplifier (8 steps)

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

TEA1098ATV VSO40 plastic very small outline package; 40 leads SOT158-1
TEA1098AH QFP44 plastic quad flat package; 44 leads (lead length 1.3 mm);

body 10 × 10× 1.75 mm

2000 Mar 21 2

PACKAGE

SOT307-2

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

QUICK REFERENCE DATA

I

= 15 mA; R

line

MUTE = HIGH; BPC = HIGH; measured according to test circuits; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

V

SLPE

V

BB

V

DD

I

BB

I

BB(PD)

G

v(MIC-LN)

G

v(IR-RECO)

∆G

v(RECO-EARO)

G

v(TXI-TXO)

G

v(HFTX-LN)

G

v(HFRX-LSAO

SWR switching range − 40 − dB

∆SWR switching range adjustment with R

∆G

v(trx)

SLPE

=20Ω;Z

= 600 Ω; f = 1 kHz;T

line

=25°C; AGCpin connected to LN; PD = HIGH;HFC = LOW;

amb

line current operating range normal operation 11 − 130 mA

with reduced performance 1 − 11 mA

stabilized voltage between
SLPE and GND

regulated supply voltage for
internal circuitry

regulated supply voltage on
pin V

DD

current available on pin V

I

= 15 mA 3.4 3.7 4.0 V

line

I

= 70 mA 5.7 6.1 6.5 V

line

I

= 15 mA 2.75 3.0 3.25 V

line

I

= 70 mA 4.9 5.3 5.7 V

line

VBB> 3.35 V + 0.25 V (typ.) 3.1 3.35 3.6 V
otherwise − V

BB

− 0.25 − V

BB

in speech mode − 11 − mA
in handsfree mode − 9 − mA

current consumption on V

PD = LOW − 460 −µA

BB

during power-down phase
voltage gain from pin

V

= 5 mV (RMS) 43.3 44.3 45.3 dB

MIC

MIC+/MIC− to LN
voltage gain from pin IR

(referenced to LN) to RECO
gain voltage range between

VIR= 15 mV (RMS);
HFC = HIGH

28.7 29.7 30.7 dB

−3 − +15 dB

pins RECO and EARO
voltage gain from pin TXI to

TXO
voltage gain from pin HFTX

V

= 3 mV (RMS);

TXI

R

= 30.1 kΩ

GATX

V

= 15 mV (RMS) 33.5 34.7 35.9 dB

HFTX

12.7 15.2 17.7 dB

to LN

) voltage gain from pin HFRX

to LSAO

V

= 30 mV (RMS);

HFRX

R

= 255 kΩ;

GALS

I

=70mA

line

SWR

referenced to

25.5 28 30.5 dB

−40 − +12 dB

365 kΩ

gain control range for

I

= 70 mA 5.45 6.45 7.45 dB

line

transmit and receive
amplifiers affected by the
AGC; with respect to
I

=15mA

line

2000 Mar 21 3

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

BLOCK DIAGRAM

REG

handbook, full pagewidth

LN 19 (15)

STARTER

LINE CURRENT DETECTION
LOW VOLTAGE BEHAVIOUR

SLPE

20
(16)18(14)

R1

SWITCH

SUPPLY

MANAGEMENT

(10) 14

(19) 23

(20) 24

V

BB

V

DD

MICS

AGC

GND

HFTX

DTMF

MIC+
MIC−

TXI

TSEN
TENV

TNOI

RNOI
RENV
RSEN

GALS

LSAO

22 (18)

17 (13)

39 (36)

35 (32)

34 (31)
33 (30)

31 (28)

9 (4)
8 (3)
7 (2)
10 (5)
12 (7)
11 (6)

15 (11)

16 (12)

AGC

tail currents for preamps

ATTENUATOR

TX AND RX

ENVELOPE AND NOISE

DETECTORS

BUFFERS

AND

COMPARATORS

TEA1098A

DUCO LOGIC
SWT STATUS

POWER-DOWN

CURRENT SOURCES

LOGIC

INPUTS

DECODING

VOICE

SWITCH

VOLUME

CONTROL

(38) 1

(37) 40

(39) 2
(40) 3

(27) 30
(26) 29

(29) 32

(24) 27
(25) 28

(21) 25

(22) 26

(41) 4
(42) 5

(1) 6

PD

HFC

MUTE
BPC

GATX
TXO

GNDTX

SWT
IDT

STAB

SWR

EVCI
LVCI

HFRX

13 (8)

DLC

RECO
GARX

EARO

38 (35)
37 (34)

36 (33)

DYNAMIC

LIMITER

Fig.1 Block diagram.

2000 Mar 21 4

ATTENUATOR

(17) 21

FCA140

IR

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

PINNING

SYMBOL

PD 1 38 power-down input (active LOW)
MUTE 2 39 logic input (active LOW)
BPC 3 40 logic input (active LOW)
EVCI 4 41 logic input for digital volume control (earpiece and loudspeaker LSB)
LVCI 5 42 logic input for digital volume control (loudspeaker MSB)
n.c. − 43 not connected
n.c. − 44 not connected
HFRX 6 1 receive input for loudspeaker amplifier
TNOI 7 2 transmit noise envelope timing adjustment
TENV 8 3 transmit signal envelope timing adjustment
TSEN 9 4 transmit signal envelope sensitivity adjustment
RNOI 10 5 receive noise envelope timing adjustment
RSEN 11 6 receive signal envelope sensitivity adjustment
RENV 12 7 receive signal envelope timing adjustment
DLC 13 8 dynamic limiter capacitor for the loudspeaker amplifier
n.c. − 9 not connected
V

BB

GALS 15 11 loudspeaker amplifier gain adjustment
LSAO 16 12 loudspeaker amplifier output
GND 17 13 ground reference
SLPE 18 14 line current sense
LN 19 15 positive line terminal
REG 20 16 line voltage regulator decoupling
IR 21 17 receive amplifier input
AGC 22 18 automatic gain control/line loss compensation
V

DD

MICS 24 20 microphone supply
STAB 25 21 reference current adjustment
SWR 26 22 switching range adjustment
n.c. − 23 not connected
SWT 27 24 switch-over timing adjustment
IDT 28 25 Idle mode timing adjustment
TXO 29 26 handsfree microphone amplifier output
GATX 30 27 handsfree microphone amplifier gain adjustment
TXI 31 28 handsfree microphone amplifier input
GNDTX 32 29 ground reference for microphone amplifiers
MIC− 33 30 negative handset microphone amplifier input
MIC+ 34 31 positive handset microphone amplifier input

TEA1098ATV TEA1098AH

14 10 stabilized supply for internal circuitry

23 19 3.35 V regulated voltage supply for microcontrollers

PIN

DESCRIPTION

2000 Mar 21 5

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

SYMBOL

DESCRIPTION

TEA1098ATV TEA1098AH

DTMF 35 32 dual tone multi-frequency input
EARO 36 33 earpiece amplifier output
GARX 37 34 earpiece amplifier gain adjustment
RECO 38 35 receive amplifier output
HFTX 39 36 transmit input for line amplifier
HFC 40 37 logic input

PIN

handbook, halfpage

PD

MUTE

BPC

EVCI

LVCI

HFRX

TNOI
TENV
TSEN

RNOI
RSEN
RENV

DLC
V

BB

GALS
LSAO

GND

SLPE

LN

REG

1
2
3
4
5
6
7
8
9

10

TEA1098ATV

11
12
13
14
15
16
17
18
19

20

FCA141

40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21

HFC
HFTX
RECO
GARX
EARO
DTMF
MIC+
MIC−
GNDTX
TXI
GATX
TXO
IDT
SWT
SWR
STAB
MICS
V

DD

AGC
IR

Fig.2 Pin configuration (TEA1098ATV).

2000 Mar 21 6

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

handbook, full pagewidth

n.c.

LVCI

EVCI

BPC

MUTE

PD

HFTX

RECO

n.c.
44

HFC

43

42

41

40

39

38

37

GARX

36

35

34

1

HFRX

2

TNOI

3

TENV

4

TSEN

5

RNOI

6

RSEN
RENV

7

DLC

8

n.c.

9

V

10

BB

GALS

11

12

13

14

15
LN

GND

SLPE

LSAO

Fig.3 Pin configuration (TEA1098AH).

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supplies

TEA1098AH

16

17

REGIRAGC

This capacitor converted into an equivalent inductance
realizes the set impedance conversion from its DC value
(R

The IC regulates the line voltage at pin LN and can be
calculated as follows:

33

EARO
DTMF

32
31

MIC+

30

MIC−
GNDTX

29
28

TXI
GATX

27

TXO

26

IDT

25
24

SWT
n.c.

23

21

22

20

18

19

DD

V

MICS

STAB

) to its AC value (done by an external impedance).

SLPE

FCA142

SWR

LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE,
REG AND VBB)

The supply for the TEA1098A and its peripherals is
obtained from the line. The IC generates a stabilized
reference voltage (V

) between pins SLPE and GND.

ref

This reference voltage is equal to 3.7 V for line currents
lower than 18 mA. It than increases linearly with the line
current and reaches the value of 6.1 V for line currents
higher than 45 mA. For line currents below 9 mA, the
internal reference voltage generating V

is automatically

ref

adjusted to a lowervalue. This is the so-calledlow voltage
area and the TEA1098A has limited performances in this
area (see Section “Low voltage behaviour”). This
reference voltage is temperature compensated.

The voltage between pins SLPE and REG is used by the
internal regulator to generate the stabilized reference
voltageand is decoupledby means ofacapacitor between
pins LN and REG.

2000 Mar 21 7

V

I

V

=

LN

SLPEIline

refRSLPE

I×+

SLPE

Ix–=

where:
I

= line current

line

Ix= current consumed on pin LN (approximately a few µA)
I

= current flowing through the R

SLPE

The preferred value for R

is 20 Ω. Changing this value

SLPE

SLPE

resistor

will affect more than the DC characteristics; it also
influences the transmit gains to the line, the gain control
characteristic, thesidetone level and the maximum output
swing on the line.

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

handbook, full pagewidth

LN

REG

GND

C

REG

4.7 µF

SLPE

TP1

R3

R2

TN1

R1

from

preamp

R

SLPE

20 Ω

J1

Fig.4 Line interface principle.

As can beseen fromFig.4, theinternal circuitryis supplied
by pin VBB, which is a strong supply point combined with
the line interface. The line current is flowing through the
R

resistor and is sunk by the VBB voltage stabilizer,

SLPE

thusbecoming availablefor a loudspeakeramplifier orany
peripheral IC. Its voltage is equal to 3.0 V for line currents
lower than 18 mA. It than increases linearly with the line
current and reaches the value of 5.3 V for line currents
greater than 45 mA. It is temperature compensated.

TR2

GND

TR1

E1

D1

J2

GND

Thereference voltageV

TN2

E2

MGM298

canbe increasedbyconnecting

ref

D1

V

BB

an external resistor between pins REG and SLPE. For
large line currents, this increase can slightly affect some
dynamic performances such as maximum signal level on
the line for 2% THD. The voltage on pin VBBis not affected
by this external resistor; see Fig.5 for the main DC
voltages.

The aim of the current switch TR1 and TR2 is to reduce
distortionof largeAC line signals.Current I

SLPE

issupplied
to VBBvia TR1 when the voltage on SLPE is greater than
VBB+ 0.25 V.When thevoltageon SLPE islower than this
value, the current I

is shunted to GND via TR2.

SLPE

2000 Mar 21 8

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

handbook, full pagewidth

8

Voltages

(V)

6

4

2

0

0.00 0.01

0.02 0.05

0.040.03

Fig.5 Main DC voltages.

MGL439

LN

SLPE

VBB

VDD

MICS

0.070.06

Line current (A)

V

SUPPLY FOR MICROCONTROLLER (PIN V

DD

Thevoltage on theV

supplypoint follows thevoltage on VBBwitha difference typicallyequal to 250 mVand is internally

DD

DD

)

limited to 3.35 V. This voltage is temperature compensated. This supplypoint can provide a current up to 3 mAtypically.
Its internal consumption stays low (a few 10 nA) as long as VDD does not exceed 1.5 V.

VDD can also be used as an input; in this case the voltage will be stabilised to 3.35 V up to 75 mA input current.
VBB and VDDcan supply external circuits in the limit of currents provided from the line, taking into account the internal

current consumption.

2000 Mar 21 9

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

100.0u

handbook, full pagewidth

I

(A)

DD

10.0u

1.0u

100.0n

10.0n

1.0n

100.0p

10.0p

1.0

MGL438

1.5 2.5 3.0

2.0
VDD (V)

Fig.6 Current consumption on VDD.

SUPPLY FOR MICROPHONE (PINS MICS AND GNDTX)
The MICS output can be used as a supply for an electret

microphone. Its voltage is equal to 2.0 V; it can source a
current up to 1 mA and has an output impedance equal to
200 Ω.

LOW VOLTAGE BEHAVIOUR
For line currents below 9 mA, the reference voltage is

automatically adjusted to a lower value; the VBB voltage
follows the SLPE voltage with 250 mV difference. The
excess current available for other purposes than DC
biasing of the IC becomes small. In this low voltage area,
the IC has limited performances.

When the VBBvoltage becomes lower than 2.7 V, the V

BB

detector of the receive dynamic limiter on pin LSAO acts
continuously, discharging the capacitor connected to
pin DLC. In the DC condition, the loudspeaker is then
automatically disabled below this voltage.

When VBBgoes below 2.5 V, the TEA1098A is forced into
a low voltage mode whatever thelevels onthe logic inputs
are. It is a speech mode with reduced performances only
enablingthe microphone channel(between the MICinputs
and LN) and the earpiece amplifier. These two channels
are able to deliver signals for line currents as small as
3 mA. The HFC input is tied to GND sinking a current
typically equal to 300 µA.

POWER-DOWN MODE (PIN PD)
To reduce consumption during dialling or register recall

(flash),the TEA1098A isprovided withapower-down input
(PD). When the voltage on pin PD is LOW, the current
consumption from VBB and VDD is reduced to 460 µA
typically. Therefore a capacitor of 470 µF on VBB is
sufficient to power the TEA1098A during pulse dialling or
flash. The PD input has a pull-up structure. In this mode,
the capacitor C

is internally disconnected.

REG

2000 Mar 21 10

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

Transmit channels (pins MIC+, MIC−, DTMF, HFTX
and LN)

HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC−

AND LN)

The TEA1098A has symmetrical microphone inputs. The
input impedance between pinsMIC+ and MIC− is typically
70 kΩ. The voltage gainbetween pins MIC+/MIC− and LN
is set to 44.3 dB. Without limitation from the output, the
microphone input stage can accommodate signals up to
18 mV (RMS) at room temperature for 2% of Total
Harmonic Distortion (THD). The microphone inputs are
biased at one diode voltage.

Automatic gain control is provided for line loss
compensation.

DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
The TEA1098A has an asymmetrical DTMF input. The

inputimpedance betweenpins DTMF andGND istypically
20 kΩ. The voltagegain betweenpins DTMF andLN isset
to 25.35 dB. Without limitation from the output, the input
stage can accommodate signals up to 180 mV (RMS) at
room temperature for 2% of THD.

When the DTMF amplifier is enabled, dialling tones may
be sent on the line. These tones can be heard in the
earpiece or in the loudspeaker ata lowlevel. This is called
theconfidence tone. Thevoltageattenuation between pins
DTMF andRECO is typically−16.5 dB in handsfreemode
(HFC HIGH), and −28.2 dB in handset mode (HFC LOW).

The DC biasing of this input is 0 V.
The automatic gain control has no effect on these

channels.

HANDSFREE TRANSMIT AMPLIFIER (PINS HFTX AND LN)

The TEA1098A has an asymmetrical HFTX input, which is
mainly intended for use in combination with the TXO
output. The input impedance between pins HFTX and
GND is typically 20 kΩ. The voltage gain between pins
HFTX andLN is set to 34.7 dB. Without limitation fromthe
output, the input stage can accommodate signals up to
95 mV (RMS) at room temperature for 2% of THD. The
HFTX input is biased at two diodes voltage.

Automatic gain control is provided for line loss
compensation.

Receive channels (pins IR, RECO, GARX, EARO
and EVCI)

RX AMPLIFIER (PINS IR, RECO AND EVCI)
The receive amplifier has one inputIR which is referred to

the line. The input impedance between pins IR and LN is
typically 20 kΩ and the DC biasing between these pins is
equal to one diode voltage.

When HFC = 0, the gain between pins IR (referred to LN)
and RECO is typically 17.0 dB which compensates
typically 15 dB lower than attenuation of the anti-sidetone
network. The receive amplifier gain can be digitally
increased with the 4-level logic input EVCI, providing
4 steps of 4.85 dB which apply in all handset receive
modes. Without limitation from the output, the input stage
can accommodate signals up to 50 mV (RMS) at room
temperature for 2% of THD.

When HFC = 1, the gain is set automatically to 29.7 dB
which compensate the anti-sidetone network attenuation
minus 2.3 dB.

Thisreceive amplifier hasarail-to-rail outputRECO,which
is designed for use with high ohmic (real) loads (larger
than 5 kΩ). This output is biased at two diodes voltage.

Automatic gain control is provided for line loss
compensation.

EARPIECE AMPLIFIER (PINS GARX AND EARO)
The earpiece amplifier is an operational amplifier having

itsoutput (EARO)and its invertinginput (GARX)available.
Its inputsignal comes, viaadecoupling capacitor,from the
receive output RECO. It is used in combination with two
resistors to get the required gain or attenuation compared
to the receive gain. The typical resistor ratio is 4, which
gives a 12 dB gain. The gain range can be chosen
between 0 dB and 20 dB.

Two external capacitors C
GAR and EARO) and C
GAR and GND) ensure stability. The C

(connected between pins

GAR

(connected between pins

GARS

capacitor

GAR

provides a first-order low-pass filter. The cut-offfrequency
corresponds to the time constant C
relationship C

GARS

>=10×C

GAR

× RE2. The

GAR

must be fulfilled.

The earpiece amplifier has a rail-to-rail output EARO,
biasedat two diodesvoltage.It is designedforuse with low
ohmic (real) loads (150 Ω) or capacitive loads (100 nF in
series with 100 Ω).

2000 Mar 21 11

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

AGC (pin AGC)

The TEA1098A performs automatic line loss
compensation,which fits wellwiththe trueline attenuation.
The automatic gain control varies the gain of some
transmit and receive amplifiers in accordance with the DC
linecurrent. Thecontrolrange is6.45 dBfor G
G

v(IR-RECO)

and 6.8 dB for G

v(HFTX-LN)

, which corresponds

v(MIC-LN)

and

approximately to a line length of 5.5 km for a 0.5 mm
twisted-pair copper cable.

To enable this gain control, pin AGC must be shorted to
pin LN. The start currentfor compensationcorresponds to
a line current of typically 23 mA and the stop current to
57 mA. The start current can be increased by connecting
an external resistor between pins AGC and LN. It can be
increased up to 40 mA (using a resistor typically 80 kΩ).
The start and stop current will be maintained in a ratio
equal to 2.5. By leavingthe AGC pin open-circuit, thegain
control is disabled and no line loss compensation is
performed.

Handsfree application

As can be seen from Fig.4, a loop is formed via the
sidetone network in the line interface part and the acoustic
coupling between loudspeaker and microphone of the
handsfree part. When this loop gain is greater than 1,
howling occurs. In a full duplex application this would be
the case. The loop-gain has to be much lower than 1 and
therefore has to be decreased to avoid howling.

This is achieved by the duplex controller. The duplex
controller of the TEA1098Adetects whichchannel has the
‘largest’ signal and then controls the gains of the
microphone and loudspeaker amplifiersso thatthe sum of
the gains remains constant.

As a result, in handsfree application, the circuit can be in
three stable modes:

1. Transmit mode (TX mode).
Thegain ofthemicrophone amplifier isat its maximum

and the gain of the loudspeaker amplifier is at its
minimum.

2. Receive mode (RX mode).
The gain of the loudspeaker amplifier is at its

maximum and the gain of the microphone amplifier is
at its minimum.

3. Idle mode.
The gain of the amplifiers is halfway between their

maximum and minimum value.

The difference between the maximum gain and minimum
gain is called the switching range.

handbook, full pagewidth

telephone

line

sidetone

HYBRID

Fig.7 Handsfree telephone set principles.

2000 Mar 21 12

acoustic
coupling

DUPLEX

CONTROL

MGM299

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

HANDSFREE MICROPHONE CHANNEL (PINS TXI, GATX, TXO AND GNDTX; SEE Fig.8)

The TEA1098A has an asymmetrical handsfree microphone input (pin TXI) with an input resistance of 20 kΩ. The DC
biasing of the input is 0 V. The gain of the input stage varies according to the mode of the TEA1098A. In the transmit
mode, the gain is at its maximum; in the receive mode, it is at its minimum and in the Idle mode, it is halfway between
maximum and minimum.

handbook, full pagewidth

R

V

BB

R

MIC

C

MIC

TXI

31 (28)

to

envelope

detector

V I I V

from
voice
switch

(27) 30

(26) 29

(29) 32

GATX

TXO

GNDTX

GATX

FCA150

Fig.8 Handsfree microphone channel

Switch-over from one mode to the other is smooth and click-free. The output TXO is biased at two diodes voltage and
has a current capability equal to 20 µA (RMS). In the transmit mode, the overall gain of the microphone amplifier (from
pins TXI toTXO) canbe adjustedfrom 0 dB up to 31 dB to suitspecific applicationrequirements. Thegain is proportional
to thevalue of R

and equals15.2 dB with R

GATX

= 30.1 kΩ. Withoutlimitation from the output, the microphone input

GATX

stage can accommodate signals up to 18 mV (RMS) at room temperature for 2% of THD.

LOUDSPEAKER CHANNEL

handbook, full pagewidth

R

C

C

LSAO

C

GALS

GALS

DLC

GALS

LSAO

DLC

15 (11)

16 (12)

13 (8)

V

BB

DYNAMIC

LIMITER

V I

to

logic

to/from

voice switch

I V

to

envelope

detector

VOLUME

CONTROL

6 (1)

5 (42)

4 (41)

HFRX

LVCI

EVCI

Fig.9 Loudspeaker channel.

2000 Mar 21 13

FCA151

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

Loudspeaker amplifier (pins HFRX, GALS and LSAO)

The TEA1098A has an asymmetrical input for the
loudspeaker amplifier with an input resistance of 20 kΩ
between pins HFRX and GND. It is biased at two diodes
voltage. Without limitation from the output, the input stage
can accommodate signals up to 580 mV (RMS) at room
temperature for 2% of THD.

The gain of the input stage varies according to the mode
of the TEA1098A. In the receive mode, the gain is at its
maximum; in the transmit mode, it is at its minimumand in
the Idle mode, it is halfway between maximum and
minimum. Switch-over from one mode to the other is
smooth and click-free. The rail-to-rail output stage is
designed to power a loudspeaker connected as a
single-ended load (between pins LSAO and GND).

In the receive mode, the overall gain of the loudspeaker
amplifier can be adjusted from 0 dB up to 35 dB to suit
specific application requirements. The gain from HFRX to
LSAO is proportional to the value of R
28 dB with R
parallel with R

= 255 kΩ. A capacitor connected in

GALS

is recommended and provides a

GALS

GALS

and equals

first-order low-pass filter.

Digital volume control (pins LVCI and EVCI)

The loudspeaker amplifier gain can be adjusted
(attenuated) with the LVCI logic input (as MSB) and the
4-level input EVCI (as LSBs). This combination provides
8 steps of −4 dB which applies in all handsfree receive
modes.

Dynamic limiter (pin DLC)

The dynamic limiter of the TEA1098A prevents clipping of
theloudspeaker outputstageand protects theoperation of
thecircuit whenthe supply voltageat VBBfallsbelow 2.7 V.

Hardclipping ofthe loudspeaker outputstage isprevented
by rapidly reducing the gain when the output stage starts
to saturate. The time in which gain reduction is effected
(clipping attack time) is approximately a few milliseconds.
The circuit stays in the reduced gain mode until the peaks
ofthe loudspeaker signalsnolonger causesaturation. The
gain of the loudspeaker amplifier then returns to its normal
value within the clipping release time (typically 250 ms).
Bothattack andrelease times areproportional tothe value
of the capacitor C

. The total harmonic distortion of the

DLC

loudspeaker output stage, in reduced gain mode, stays
below 2% up to 10 dB (minimum) of input voltage
overdrive [providing V

is below 580 mV (RMS)].

HFRX

Whenthe supply voltagedropsbelow aninternal threshold
voltage of 2.7 V, the gain of the loudspeaker amplifier is
rapidly reduced (approximately 1 ms). When the supply
voltage exceeds 2.7 V, the gain of the loudspeaker
amplifier is increased again.

By forcing a level lower than 0.2 V on pin DLC, the
loudspeaker amplifier is muted and the TEA1098A is
automatically forced into the transmit mode.

DUPLEX CONTROLLER

Signal and noise envelope detectors (pins TSEN, TENV,
TNOI, RSEN, RENV and RNOI)

The signal envelopes are used to monitor the signal level
strength in both channels. The noise envelopes are used
to monitor background noise in both channels. The signal
and noise envelopes provide inputs for the decision logic.
The signal and noise envelope detectors are illustrated in
Fig.10.

For the transmit channel, the input signal at pin TXI is
40 dB amplified to TSEN. For the receive channel, the
input signal at pin HFRX is 0 dB amplified to RSEN. The
signals from TSEN and RSEN are logarithmically
compressed and buffered to TENV and RENV
respectively.

The sensitivity of the envelope detectors is set with R
and R

. The capacitors connected in series with the

RSEN

TSEN

two resistors block any DC component and form a
first-order high-pass filter. In the basic application
(see Fig.18) it is assumed that V
V

= 100 mV (RMS) nominal and both R

HFRX

R

have a value of 10 kΩ. With thevalue of C

RSEN

C

at 100 nF, the cut-off frequency is at 160 Hz.

RSEN

= 1 mV (RMS) and

TXI

TSEN

and

TSEN

and

The buffer amplifiers feeding the compressed signals to
pins TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Capacitors
C

TENV

and C

set the timing of the signal envelope

RENV

monitors. In the basic application, the value of both
capacitors is 470 nF. Because of the logarithmic
compression, each 6 dB signal increase means 18 mV
increase of the voltage on the envelopes TENV or RENV
at room temperature. Thus, timings can be expressed in
dB/ms. At room temperature, the 120 µA sourced current
corresponds to a maximum rise-slope of the signal
envelope of 85 dB/ms. This is sufficient to track normal
speech signals. The 1 µA current sunkby TENV or RENV
corresponds to a maximumfall-slope of0.7 dB/ms. This is
sufficient for a smooth envelope and also eliminates the
effect of echoes on switching behaviour.

2000 Mar 21 14

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

handbook, full pagewidth

handbook, full pagewidth

DUPLEX CONTROLLER

from
microphone
amplifier

INPUT SIGNAL

to logicto logic

LOG

from
loudspeaker
amplifier

9 (4) 8 (3) 7 (2) 11 (6) 12 (7) 10 (5)
TSEN

R

TSEN

C

TSEN

TENV TNOI RSEN RENV RNOI

C

TENV

C

TNOI

LOG

R

RSEN

C

RSEN

C

RENV

Fig.10 Signal and noise envelope detectors.

4 mV (RMS)

1 mV (RMS)

MBG354

C

RNOI

FCA152

SIGNAL ENVELOPE

A: 85 dB/ms
B: 0.7 dB/ms

NOISE ENVELOPE

B: 0.7 dB/ms
C: 0.07 dB/ms

A

C

36 mV

36 mV

Fig.11 Signal and noise envelope waveforms.

To determine the noise level, the signals on pins TENV
and RENV are buffered to pins TNOI and RNOI. These
buffers have a maximum source current of 1 µA and a
maximum sink current of 120 µA. Capacitors C
C

set the timing. In the basic application, see Fig.18,

RNOI

TNOI

and

the value of both capacitors is 4.7 µF. At room
temperature, the 1 µA sourced current corresponds to a
maximum rise-slope of the noise envelope of
approximately 0.07 dB/ms.

2000 Mar 21 15

B

B

A

C

B

B

time

This is small enough to track background noise and not to
be influenced byspeech bursts.The 120 µA current that is
sunk corresponds to a maximum fall-slope of
approximately 8.5 dB/ms. However, during the decrease
of the signal envelope, the noise envelope tracks the
signal envelope so it will never fall faster than
approximately 0.7 dB/ms. The behaviour of the signal
envelope and noise envelope monitors is illustrated in
Fig.11.

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

Decision logic (pins IDT and SWT)

handbook, full pagewidth

TENV

TNOI

RENV

RNOI

8 (3)
7 (2)

ATTENUATOR

12 (7)
10 (5)

from logic

from dynamic

limiter

13 mV

13 mV

V

dt

DUPLEX CONTROLLER

LOGIC

XX11−10 µA
X10X

1X0X
XX10 0
000X 0

IDT

(25) 28

V

ref

(1)

(24) 27

+10 µA
+10 µA

FCA153

SWT

R

C

IDT

SWT

(1) When DLC < 0.2 V, −10 µA is forced.

Fig.12 Decision logic.

The TEA1098A selects its mode of operation (transmit,
receive or Idle mode) by comparing the signal and the
noise envelopesof both channels. This is executed by the
decision logic. The resulting voltage on pin SWT is the
input for the voice-switch.

To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference
V

− V

ENV

= 13 mV. This so-called speech/noise

NOI

threshold is implemented in both channels.
The signal on pin TXIcontains both speech and thesignal

fromthe loudspeaker(acoustic coupling). Whenreceiving,
the contribution from the loudspeaker overrules the
speech.

2000 Mar 21 16

As a result, the signal envelope on pin TENV is formed
mainly by the loudspeaker signal. To correct this, an
attenuator is connected between pin TENV and the
TENV/RENV comparator. Its attenuation equals that
applied to the microphone amplifier.

Whena dialtone is present on theline, withoutmonitoring,
the tone would be recognized as noise because it is a
signal with a constant amplitude. This would cause the
TEA1098A to go into the Idle modeand the user of theset
would hear the dial tone fade away. To prevent this, a dial
tone detector is incorporated which, in standard
applications, does not consider input signals between
HFRX and GND as noise when they have a level greater
than 25 mV (RMS). This level is proportional to R

RSEN

.

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

Inthe sameway, a transmitdetector is integratedwhich, in
standard applications, does not consider input signals
between pins TXI and GNDTX asnoise when they have a
level greater than 0.75 mV (RMS). This level is
proportional to R

TSEN

.

As can be seen from Fig.12, the output of the decision
logic is a current source. The logic table gives the
relationship between the inputs and the value of the
current source. It can charge or discharge the capacitor
C

with a current of 10 µA (switch-over). If the currentis

SWT

zero, the voltage on pin SWT becomes equal to the
voltageon pin IDTvia the high-ohmic resistor R

IDT

(idling).

The resulting voltage difference between pins SWT and
IDT determines the mode of the TEA1098A and can vary
between −400 and +400 mV (see Table 1).

Table 1 Modes of TEA1098A

V

− V

SWT

(mV) MODE

IDT

<−180 transmit mode
0 Idle mode
>180 receive mode

The switch-over timing can be set with C
mode timing with C
given in Fig.18, C

and R

SWT

is 220 nF and R

SWT

. In the basic application

IDT

, the Idle

SWT

is 2.2 MΩ. This

IDT

enables a switch-over time from transmit to receive mode
or vice-versa of approximately 13 ms (580 mV swing on
pin SWT).The switch-overtime from Idlemode totransmit
mode or receive mode is approximately 4 ms (180 mV
swing on pin SWT).

Theswitch-over time,from receive modeor transmitmode
toIdle mode isequalto 4 × R

IDTCSWT

andis approximately

2 seconds (Idle mode time).
The input at pin DLC overrules the decision logic. When

the voltage on pin DLC goes lower than 0.2 V, the
capacitor C

is discharged with 10 µA thus resulting in

SWT

the transmit mode.

In thetransmit mode, the gain of the microphone amplifier
isat its maximumand the gainof the loudspeakeramplifier
is at its minimum. In the receive mode, the opposite
applies. In the Idle mode, both microphone and
loudspeaker amplifier gains are halfway.

The difference between maximum and minimum is the so
called switching range. This range is determined by the
ratio of R
0 and 52 dB. R

SWR

and R

STAB

and is adjustable between

STAB

should be 3.65 kΩ and sets an
internally used reference current. In the basic application
diagram given in Fig.18, R

is 365 kΩ which results in a

SWR

switching range of 40 dB. The switch-over behaviour is
illustrated in Fig.14.

In the receive mode, the gain of the loudspeaker amplifier
can be reduced using the volume control. Since the
voice-switch keeps thesum ofthe gainsconstant, the gain
of the microphone amplifier is increased at the same time
(see dashed curves in Fig.14). In the transmit mode,
however, the volume control has no influence on the gain
of themicrophone amplifier or the gain of the loudspeaker
amplifier. Consequently, the switching range is reduced
when the volume is reduced. At maximum reduction of
volume, the switching range becomes 0 dB.

DUPLEX CONTROLLER

to

from

volume

control

microphone

amplifier

G

vtx

VOICE SWITCH

loudspeaker

+ G

vrx

to

amplifier

from
SWT

=

R

25 (21)

26 (22)

STAB

SWR

(1)

C

STAB

R

SWR

Voice-switch (pins STAB and SWR)

A diagram of the voice-switch is illustrated in Fig.13. With
the voltage on pin SWT, the TEA1098A voice-switch
regulates the gains of the transmit and the receive
channels so that the sum of both is kept constant.

2000 Mar 21 17

FCA154

(1) C = constant.

Fig.13 Voice switch.

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

handbook, full pagewidth

Logic inputs

G

, G

vtx

vrx

(10 dB/div)

Idle

Tx mode Rx mode

G

vtx

G

vrx

−400 −200 0 +400+200

mode

V

SWT

Fig.14 Switch-over behaviour.

− V

FCA155

IDT

(mV)

+24 dB
+16 dB
+8 dB

G

vtx(min)

G

vrx(max)

−8 dB

−16 dB

−24 dB

The actions of the logic inputs BPC and MUTE, combined with the HFC input are detailed in the Table 2.

Table 2 Table of switch management

LOGIC INPUTS

FEATURES APPLICATION

HFC MUTE BPC

0 0 0 DTMF to RECO; RECO to EARO;

handset beep mode

MICS is active

0 0 1 DTMF to LN; DTMF to RECO;

handset dialling mode

RECO to EARO; MICS is active

0 1 0 IR to RECO; RECO to EARO;

handset secret mode

MICS is active

0 1 1 MIC to LN; IR to RECO; RECO to EARO;

handset conversation mode

MICS is active

1 0 0 DTMF to RECO; HFRX to LSAO;

handsfree beep mode

MICS is active

1 0 1 DTMF to LN; DTMF to RECO;

handsfree dialling mode

HFRX to LSAO; MICS is active

1 1 0 IR to RECO; HFRX to LSAO;

handsfree secret mode

MICS is active

1 1 1 TXI to TXO; HFTX to LN;

handsfree conversation mode
IR to RECO; HFRX to LSAO;
MICS is active

2000 Mar 21 18

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

V

n(max)

I

line

P

tot

T

stg

T

amb

THERMAL CHARACTERISTICS

positive continuous line voltage −0.4 12 V
repetitive line voltage during switch-on or line

−0.4 13.2 V

interruption
maximum voltage on pins REG, SLPE, IR and AGC −0.4 VLN+ 0.4 V
maximum voltage on all other pins except V

DD

−0.4 VBB+ 0.4 V
maximum line current − 130 mA
total power dissipation T

amb

=75°C
TEA1098ATV (see Fig.15) − 400 mW
TEA1098AH (see Fig.16) − 720 mW

IC storage temperature −40 +125 °C
ambient temperature −25 +75 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air

TEA1098ATV 117 K/W
TEA1098AH 66 K/W

2000 Mar 21 19

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

160

handbook, full pagewidth

I

line

(mA)

120

80

40

0

2 8

FCA177

(1)
(2)
(3)
(4)
(5)

(6)

64

LINE T

10

amb

V

SLPE

(°C) P

(V)

tot

12

(mW)

(1) 25 790
(2) 35 710
(3) 45 630
(4) 55 550
(5) 65 470
(6) 75 390

Fig.15 Safe operating area (TEA1098ATV)

2000 Mar 21 20

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

160

handbook, full pagewidth

I

line

(mA)

120

80

40

0

2 10

(1)

(2)
(3)

(4)

(5)

(6)

864

LINE T

amb

(°C) P

(1) 25 1290
(2) 35 1250
(3) 45 1110
(4) 55 975
(5) 65 835
(6) 75 695

V

SLPE

(V)

tot

FCA178

12

(mW)

Fig.16 Safe operating area (TEA1098AH).

2000 Mar 21 21

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

CHARACTERISTICS

I

= 15 mA; R

line

MUTE = HIGH; BPC = HIGH; all DC levels are referenced to GND; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

SLPE

=20Ω;Z

= 600 Ω; f = 1 kHz;T

line

=25°C; AGCpin connected to LN; PD = HIGH;HFC = LOW;

amb

INE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND V

L
V

V

SLPE

REF

stabilized voltage
between SLPE and
GND

stabilized voltage with
an external resistor R

VA

I

= 15 mA 3.4 3.7 4 V

line

I

= 70 mA 5.7 6.1 6.5 V

line

R

=40kΩ−4.5 − V

VA

between REG and
SLPE

∆V

(T) stabilized voltage

REF

T

= −25 to +75 °C −±60 − mV

amb

variation with
temperaturereferenced
to 25 °C

V

LN

V

BB

I

line

∆VBB(T) regulated voltage

line voltage I

regulated supply
voltage for internal
circuitry

line current for voltage
increase

=1mA − 1.55 − V

line

I

=4mA − 2.35 − V

line

I

= 15 mA 3.7 4.0 4.3 V

line

I

= 130 mA − 8.7 9.3 V

line

I

= 15 mA; I

line

I

= 70 mA; I

line

VBB
VBB

start current − 18 − mA
stop current − 45 − mA
T

= −25 to +75 °C −±30 − mV

amb

variation with
temperaturereferenced
to 25 °C

I

BB

S

UPPLY FOR PERIPHERALS (PIN V

V

DD

current available on pin
V

BB

supply output voltage VBB> 3.35 V + 0.25 V (typ.) 3.1 3.35 3.6 V

DD

)

in speech mode − 11 − mA
in handsfree mode − 9 − mA

otherwise − V

(T) regulated voltage

∆V

DD

variation with

T

= −25 to +75 °C;

amb

VBB> 3.35 V + 0.25 V (typ.)
temperaturereferenced
to 25 °C

I

DD

currentconsumption on
V

DD

in trickle mode; I

VDD= 1.5 V;

line

VBBdischarging

I

VDD

current sunk from
external source

in ringer mode; I

VDD= 3.35 V

line

)

BB

= 0 2.75 3.0 3.25 V
= 0 4.9 5.3 5.7 V

− 0.25 − V

BB

−±30 − mV

= 0 mA;

=0;

− 15 150 nA

−− 75 mA

2000 Mar 21 22

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DD(O)

SUPPLY FOR MICROPHONE (PIN MICS)
V

MICS

POWER-DOWN INPUT (PIN PD)
V

IL

I

i(PD)(l)

V

IH

I

BB(PD)

Preamplifier inputs (pins MIC+, MIC−, IR, DTMF, TXI, HFTX and HFRX)
Z

 input impedance

i(MIC)

Z

 input impedance

i(IR)

Z

Z

Z

Z

 input impedance

i(DTMF)

 input impedance

i(TXI)

 input impedance

i(HFTX)

 input impedance

i(HFRX)

TX amplifiers

current available for

VDD= 3.3 V −−3 − mA
peripherals

supply voltage for a

− 2.0 − V

microphone

LOW-level input voltage −0.4 − 0.3 V
input current at low

−−3 −6 µA

voltage
HIGH-level input

1.4 − VBB+ 0.3 V

voltage
currentconsumption on

PD=LOW − 460 −µA
VBBduring power-down
phase

differential between

− 70 − kΩ

pins MIC+ and MIC−
single-ended

− 35 − kΩ
between pins
MIC+/MIC− and
GNDTX

− 20 − kΩ

between pins IR and
LN

− 20 − kΩ

between pins DTMF
and GND

− 20 − kΩ

between pins TXI and
GNDTX

− 20 − kΩ

between pins HFTX
and GND

− 20 − kΩ

between pins HFRX
and GND

TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC− AND LN)
G

v(MIC-LN)

voltage gain from pin

V

= 5 mV (RMS) 43.3 44.3 45.3 dB

MIC

MIC+/MIC− to LN

∆G

v(f)

gain variation with

f = 300 to 3400 Hz −±0.25 − dB
frequencyreferencedto
1 kHz

2000 Mar 21 23

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆G

v(T)

CMRR common mode

THD total harmonic

V

no(LN)

∆G

v(mute)

∆G

v(MIC)(mute)

DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
G

v(DTMF-LN)

∆G

v(f)

∆G

v(T)

∆G

v(mute)

G

v(DTMF-RECO)

G

v(DTMF-RECO)

∆G

v(DTMF-RECO)

∆G

v(DTMF-RECO)

gain variation with
temperaturereferenced
to 25 °C

rejection ratio

distortion at LN

noise output voltage at
pin LN; pins
MIC+/MIC− shorted
through 200 Ω

gain reduction when
muted

gain reduction in
microphone mute mode

voltage gain from pin
DTMF to LN

gain variation with
frequencyreferencedto
1 kHz

gain variation with
temperaturereferenced
to 25 °C

gain reduction if not
active

voltage gain from pin
DTMF to RECO in
handsfree mode

voltage gain from pin
DTMF to RECO in
handset mode

digital volume control
adjustment range in
handset mode

digital volume control
adjustment step in
handset mode

T

= −25 to +75 °C −±0.25 − dB

amb

− 80 − dB

V

= 1.4 V (RMS) −− 2%

LN

= 4 mA;

I

line

−− 10 %

VLN= 0.12 V (RMS)

psophometrically weighted

−−77 − dBmp

(p53 curve)

MUTE = 0; see Table 2 60 80 − dB

V

= 10 mV (RMS);

MIC

60 −−dB
MUTE = 1; BPC = 0;
see Table 2

V

= 50 mV (RMS) 24.35 25.35 26.35 dB

DTMF

f = 300 to 3400 Hz −±0.25 − dB

T

= −25 to +75 °C −±0.25 − dB

amb

MUTE = 1; see Table 2 60 80 − dB

V

= 50 mV (RMS);

DTMF

−−17 − dB

MUTE = 0; HFC = 1

V

= 50 mV (RMS);

DTMF

−−28.2 − dB
MUTE = 0; HFC = 0;
EVCI = 0

V

= 50 mV (RMS);

DTMF

−−12.75 − dB
MUTE = 0; HFC = 0

MUTE = 0; HFC = 0; per

−+4.25 − dB
step

2000 Mar 21 24

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

TX AMPLIFIER USING HFTX (PINS HFTX AND LN)
G

v(HFTX-LN)

voltage gain from pin
HFTX to LN

∆G

v(f)

gain variation with
frequencyreferencedto
1 kHz

∆G

v(T)

gain variation with
temperaturereferenced
to 25 °C

THD total harmonic

distortion at LN

V

HFTX(rms)

maximum input voltage
at HFTX (RMS value)

V

no(LN)

noise output voltage at
pin LN; pin HFTX
shorted to GND
through 200 Ω in series
with 10 µF

∆G

v(m)

gain reduction when
muted

∆G

v(MIC)(mute)

gain reduction in
microphone mute mode

RX amplifiers

V

= 15 mV (RMS) 33.5 34.7 35.9 dB

HFTX

f = 300 to 3400 Hz −±0.25 − dB

T

= −25 to +75°C −±0.35 − dB

amb

V

= 1.4 V (RMS) −− 2%

LN

I

= 70 mA; THD = 2% − 85 − mV

line

psophometrically weighted

−−77 − dBmp
(p53 curve)

MUTE = 0; see Table 2 60 80 − dB

MUTE = 1; BPC = 0;

60 −−dB

see Table 2

RX AMPLIFIERS USING IR (PINS IR AND RECO)
G

v(IR-RECO)(HF)

voltage gain from IR to
RECO (handsfree
mode)

G

v(IR-RECO)(HS)

voltage gain from IR to
RECO (handset mode)

∆G

v(IR-RECO)

digital volume control
adjustment range in
handset mode

∆G

v(IR-RECO)

digital volume control
adjustment step in
handset mode

∆G

v(f)

gain variation with
frequency referred to
1 kHz

∆G

v(T)

gain variation with
temperaturereferenced
to 25 °C

V

IR(rms)(max)

maximum input voltage
on IR (referenced to
LN) (RMS value)

VIR= 4 mV (RMS); HFC = 1 28.4 29.4 30.4 dB

VIR= 4 mV (RMS);HFC = 0;

16.2 17.2 18.2 dB
EVCI = 0

VIR= 4 mV (RMS);HFC = 0;
EVCI = V

DD

13 14.5 16 dB

HFC = 0; per step − +4.85 − dB

f = 300 to 3400 Hz −±0.25 − dB

T

= −25 to +75 °C −±0.3 − dB

amb

I

= 70 mA; THD = 2% − 50 − mV

line

2000 Mar 21 25

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

RECO(rms)(max)

V

no(RECO)(rms)

∆G

v(mute)

RX EARPIECE AMPLIFIER (PINS GARX AND EARO)
∆G

v(RECO-EARO)

V

EARO(rms)(max)

V

no(EARO)(rms)

Automatic Gain Control (pin AGC)

∆G

v(trx)

I

start

I

stop

∆I

start

Logic inputs (pins HFC, MUTE, and BPC)

V

IL

V

IH

I

i(l)

maximum output
voltage on RECO

THD = 2%;
G

v(RECO-EARO)

0.75 0.9 − V

=12dB

(RMS value)
noise output voltage at

pin RECO; pin IR is an

psophometrically weighted
(p53 curve)

−−84 − dBVp

open-circuit
(RMS value)

gain reduction if not

MUTE = 0; see Table 2 60 80 − dB

active

gain voltage range

0 − +20 dB
between pins RECO
and EARO

maximum output
voltage on EARO

sine wave drive;RL= 150 Ω;
THD < 2%

0.75 0.9 − V

(RMS value)
noise output voltage at

pin EARO; pin IR is an
open-circuit

G

v(EARO)

= 12 dB; EVCI = 0;
psophometrically weighted
(p53 curve)

−−84 − dBVp

(RMS value)

gain control range for
transmit and receive
signals affected by the
AGC; with respect to
I

=15mA

line

highest line current for

I

= 70 mA; G

line

G

v(IR-RECO)

= 70 mA for G

I

line

R

=0

AGC

; R

v(MIC−LN)

=0;

AGC

v(HFTX−LN)

;

5.45 6.45 7.45 dB

;

5.8 6.8 7.8 dB

− 23 − mA

maximum gain
lowest line current for

− 57 − mA

maximum gain
I

adjustment range

start

with R

AGC

−− 40 mA

LOW-levelinputvoltage −0.4 − 0.3 V
HIGH-level input

1.4 − VBB+ 0.3 V

voltage
input current at low

VBB= 3.0 V

voltage

for pin HFC − 0 −µA
for pin

MUTE −−5 −µA
BPC −−2.5 −µA

for pin

2000 Mar 21 26

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

i(h)

Handsfree mode (HFC = HIGH)

HF MICROPHONE AMPLIFIER (PINS TXI, TXO AND GATX)
G

v(TXI-TXO)

∆G

v

∆G

v(f)

∆G

v(T)

V

no(TXO)(rms)

∆G

v(mute)

∆G

v(SEC)

HF LOUDSPEAKER AMPLIFIER (PINS HFRX, LSAO, GALS AND DLC)
G

v(HFRX-LSAO)

∆G

v(HFRX-LSAO

∆G

v(step)

∆G

v

∆G

v(f)

∆G

v(T)

V

HFRX(rms)(max)

input current at high

VBB= 3.0 V

voltage

for pin HFC − 2.5 −µA
for pin

MUTE − 0 −µA

for pin

BPC − 0 −µA

voltage gain from pin
TXI to TXO

voltagegain adjustment
with R

GATX

gain variation with

V

= 3 mV (RMS);

TXI

R

= 30.1 kΩ

GATX

12.7 15.2 17.7 dB

−15 − +16 dB

f = 300 to 3400 Hz −±0.1 − dB

frequencyreferencedto
1 kHz

gain variation with

T

= −25 to +75 °C −±0.15 − dB

amb

temperaturereferenced
to 25 °C

noise output voltage at
pin TXO; pin TXI is
shorted through 200 Ω

psophometrically weighted
(p53 curve); G

v(TXI)

= 15 dB;

RMS value

−−101 − dBVp

and 10 µF to GNDTX
gain reduction when

MUTE = 0; see Table 2 60 80 − dB

muted
gain reduction in

SECRET mode

V

= 10 mV (RMS);

txi

MUTE = 1; BPC = 0;

60 −−dB

see Table 2

nominal voltage gain
from pin HFRX to
LSAO

) digital volume control

adjustment range
digital volume

V

= 30 mV (RMS);

HFRX

R

= 255 kΩ;

GALS

LVCI=VDD; EVCI = V
V

= 30 mV (RMS);

HFRX

R

= 255 kΩ

GALS

DD

24.5 27 29.5 dB

25.5 27 28.5 dB

per step − 3.85 − dB

adjustment step
voltagegain adjustment

with R

GALS

gain variation with

f = 300 to 3400 Hz −±0.3 − dB

−28 − +7 dB

frequencyreferencedto
1 kHz

gain variation with

T

= −25 to +75 °C −±0.3 − dB

amb

temperaturereferenced
to 25 °C

maximum input voltage
at pin HFRX
(RMS value)

I

= 70 mA;

line

R

=33kΩ; for 2% THD

GALS

in the input stage

− 580 − mV

2000 Mar 21 27

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

no(LSAO)(rms)

∆G

v(mute)

V

LSAO(rms)

I

LSAO(max)

DYNAMIC LIMITER (PINS LSAO AND DLC)
t

att

t

rel

THD total harmonic

V

BB(th)

MUTE RECEIVE (PIN DLC)
V

DLC(th)

I

DLC(th)

∆G

vrx(m)

TX AND RX ENVELOPE AND NOISE DETECTORS (PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI)

noise output voltage at
pin LSAO; pin HFRX is
open-circuit

psophometrically weighted
(p53 curve); LVCI = VDD;
EVCI = V

DD

−−79 − dBVp

(RMS value)
gain reduction if not

see Table 2 60 −−dB

active
output voltage

capability at pin LSAO
with sine wave signal
and loaded with
50 Ω + 220 µF;
G

vLSAO

= 28 dB

maximum output

IBB= 1 mA; IDD=1mA −− −

I

=18mA − 0.9 − V

line

=30mA − 1.3 − V

I

line

I

>50mA − 1.6 − V

line

150 300 − mA
current at pin LSAO
(peak value)

attack time when V

jumps up from

HFRX

−− 5ms

20 mV to 20 mV +10 dB
when V

V

BB(th)

release time when V

drops below

BB

jumps down

HFRX

− 1 − ms

− 100 − ms

from 20 mV +10 dB
to 20 mV

V

distortion

= 20 mV + 10 dB;

HFRX

G

v(LSAO)

= 28 dB; t > t

att

− 12%

VBB limiter threshold − 2.7 − V

threshold voltage

−− 0.2 V
required on pin DLC to
obtain mute receive
condition

Start-up current

V

= 0.2 V − 100 −µA

DLC

sourced by pin DLC
voltage gain reduction

V

= 0.2 V 60 80 − dB

DLC

in mute receive
condition

Preamplifiers

G

v(TSEN)

voltage gain from pin
TXI to TSEN

G

v(RSEN)

voltage gain from pin
HFRX to RSEN

2000 Mar 21 28

− 40 − dB

− 0 − dB

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Logarithmic compressor and sensitivity adjustment

∆V

det(TSEN)

∆V

det(RSEN)

Signal envelope detectors

I

source(ENV)

I

sink(ENV)

∆V

ENV

Noise envelope detectors

I

source(NOI)

I

sink(NOI)

∆V

NOI

DIAL TONE DETECTOR
V

HFRX(th)(rms)

TX LEVEL LIMITER
V

TXI(th)(rms)

DECISION LOGIC (PINS IDT AND SWT)

sensitivity detection on
pin TSEN; voltage
change on pin TENV
when doubling the
current from TSEN

sensitivity detection on
pin RSEN; voltage
change on pin RENV
when doubling the
current from RSEN

maximum current
sourced from pin TENV
or RENV

maximum current sunk
by pin TENV or RENV

voltage difference
between RENV and
TENV

maximum current
sourced from pin TNOI
or RNOI

maximum current sunk
by pin TNOI or RNOI

voltage difference
between pins RNOI
and TNOI

threshold level at pin
HFRX (RMS value)

threshold level at pin
TXI (RMS value)

I

= 0.8 to 160 µA − 18 − mV

TSEN

I

= 0.8 to 160 µA − 18 − mV

RSEN

− 120 −µA

−1.25 −1 −0.75 µA

10 µA sourced from both

−±3 − mV

RSEN and TSEN; signal
detectors tracking; note 1

0.75 1 1.25 µA

−−120 −µA

when 5 µA is sourced from

−±3 − mV
bothRSEN andTSEN;noise
detectors tracking; note 1

R

=10kΩ;

RSEN

C

= 100 nF

RSEN

R

=10kΩ−0.75 − mV

TSEN

− 25 − mV

Signal recognition

∆V

Strx(th)

threshold voltage
between RENV/RNOI

V

HFRX<VHFRX(th)

V

TXI<VTXI(th)

; note 2
orbetweenTENV/TNOI
to switch-over from Idle
mode to RX/TX mode

2000 Mar 21 29

;

− 13 − mV

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Switch-over

I

source(SWT)

I

sink(SWT)

I

idle(SWT)

VOICE SWITCH (PINS STABAND SWR)
SWR switching range − 40 − dB

∆SWR switching range

|∆G

| voltage gain variation

v

G

tr

current sourced from
pin SWT when
switching to receive
mode

current sunk by pin
SWT whenswitching to
transmit mode

current sourced from
pin SWT in Idle mode

adjustment

from active modes to
Idle mode

gain tracking
(G

vtx+Gvrx

) during
switching, referred to
Idle mode

7.5 10 12.5 µA

−12.5 −10 −7.5 µA

− 0 −µA

with R

referenced to

SWR

−40 − +12 dB

365 kΩ
SWRA = 40 dB −±20 − dB

−±0.5 − dB

Notes

1. Corresponds to ±1 dB tracking.

2. Corresponds to 4.3 dB noise/speech recognition level.

2000 Mar 21 30

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2000 Mar 21 31

ndbook, full pagewidth

TEST AND APPLICATION INFORMATION

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

Vd = 10 V

V

HFTX

i = 15 mA
J I

line

D

V

TXIN

MIC

C

4.7 µF

C

HFTX

100 nF

R

30.1 kΩ

C

DTMF

100 nF

C

TENV

470 nF

E
v = sin

100 nF

MICS

R
200 Ω

GATX

C

ir

IR

MIC

R

SLPE REG AGC LN

18 (14) 20 (16) 22 (18) 19 (15) 14 (10) 23 (19)

IR

21 (17)

MICS

24 (20)

MIC+

34 (31)

MIC−

33 (30)

HFTX

39 (36)

TXO

29 (26)

GATX

30 (27)

TXI

31 (28)

DTMF

35 (32)

TSEN

9 (4)

TENV

8 (3)

TNOI

7 (2)

17(13) 32 (29) 25 (21) 26 (22) 13 (8) 27 (24)

GND GNDTX

C

TNOI

4.7 µF

Z

imp

620 Ω

C

z

emc

10 nF

C

imp

100 µF

C

100 nF

V

TXI

V

DTMF

R

TSEN

10 kΩ

C

TSEN

100 nF

SLPE

20 Ω

C

REG

4.7 µF

TEA1098A

STAB

R

STAB

3.65 kΩ

VBB

C

DLC

470 nF

C

VDD

47 µF

V

DD

(38) 1

(37) 40

(39) 2

(33) 36

(34) 37

(35) 38

(1) 6

(11) 15

(12) 16

(6) 11
(7) 12
(5) 10

(25) 28

C
220 nF

C

470 µF

V

BB

SWR DLC SWT

R

SWR

365 kΩ

SWT

PD
HFC
MUTE

EARO

GARX

100 kΩ

RECO

HFRX

GALS

LSAO

RSEN
RENV
RNOI
IDT

R

e1

R

IDT

2.2 MΩ

C
100 nF

C

HFRX

100 nF

C
100 pF

rxe

R

GALS

255 kΩ

C

4.7 µF

GAR

RNOI

C

GARS

1 nF

V

HFRX

R

e2

100 kΩ

C

GALS

150 pF

R

RSEN

C

RENV

470 nF

10 kΩ

R

QR

150 Ω

C

QR

4.7 µF

C

220 µF

R

C
100 nF

LSAO

LSAO

50 Ω

RSEN

Fig.17 Test configuration.

FCA145

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2000 Mar 21 32

A

B

D2 D3

D1 D4

handset

micro

handsfree

micro

D
Vd =
10 V

MICS

from

MICS

C

HFTX

100 nF

C

TENV

470 nF

R

392 Ω

C

100 nF

R

tx3

8.2 kΩ

C
220 nF

ast3

IR

C

MICS

4.7 µF

DTMF

bal

R

SLPE

20 Ω

SLPE REG AGC LN

18 (14) 20 (16) 22 (18) 19 (15) 14 (10) 23 (19)

IR

21 (17)

MICS

24 (20)

MIC+

34 (31)

MIC−

33 (30)

HFTX

39 (36)

TXO

29 (26)

GATX

30 (27)

TXI

31 (28)

35 (32)

TSEN

9 (4)

TENV

8 (3)

TNOI

7 (2)

17 (13) 32 (29) 25 (21) 26 (22) 13 (8) 27 (24)

GND GNDTX

C

TNOI

4.7 µF

R

bal2

820 Ω

R

Z

C

emc

10 nF

R
1 kΩ

R
1 kΩ

C

MICB

33 nF

MICP

MICM

620 Ω

C

tx2

22 nF

C

tx1

22 nF

C

100 nF

C
22 µF

TXIN

z

C

MICH

33 nF

R

BMICS

2 kΩ

imp

imp

R
10 kΩ

C
100 nF

R

15 kΩ

R

15 kΩ

TSEN

TSEN

130 Ω

R

3.92 kΩ

R
130 kΩ

tx2

tx1

R

30.1 kΩ

bal1

ast2

ast1

GATX

C

DTMF

100 nF

book, full pagewidth

C

REG

4.7 µF

TEA1098A

STAB

R

STAB

3.65 kΩ

C

VBB

470 µF

V

BB

SWR DLC SWT

R

SWR

365 kΩ

C

DLC

470 nF

V

(38) 1

(37) 40

(39) 2

(33) 36

(34) 37

(35) 38

(1) 6

(11) 15

(12) 16

(6) 11
(7) 12
(5) 10

(25) 28

C
47 µF

C
220 nF

DD

SWT

VDD

PD
HFC
MUTE
EARO

GARX

RECO

HFRX
GALS

LSAO
RSEN
RENV
RNOI
IDT

R

GALS

255 kΩ

R

IDT

2.2 MΩ

PD
HFC
MUTE

R

e1

100 kΩ

C

rxe

100 nF

C

HFRX

100 nF

C
100 pF

C

C

4.7 µF

from

microcontroller

GAR

GALS

150 pF

RNOI

R

e2

100 kΩ

C

RENV

470 nF

C

QR

10 µF

C

LSAO

220 µF

C

GARS

1 nF

R

RSEN

10 kΩ

C

RSEN

100 nF

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

Fig.18 Basic application diagram.

FCA146

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

PACKAGE OUTLINES

VSO40: plastic very small outline package; 40 leads

D

y

Z

40

pin 1 index

SOT158-1

E

c

H

E

21

A

2

A

1

L

p

L

A

X

v M

A

Q

(A )

A

3

θ

1

e

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT A

mm

inches

Notes

1. Plastic or metal protrusions of 0.4 mm maximum per side are not included.

2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.

A

max.

2.70

0.11

OUTLINE

VERSION

SOT158-1

1

0.3

0.1

0.012

0.004

A2A

2.45

2.25

0.096

0.089

IEC JEDEC EIAJ

3

0.25

0.010

b

p

0.42

0.30

0.017

0.012

0.22

0.14

0.0087

0.0055

(1)E(2)

cD

15.6

15.2

0.61

0.60

REFERENCES

20

w M

b

p

scale

eHELLpQywv θ

7.6

0.762 2.25

7.5

0.30

0.03 0.089

0.29

12.3

11.8

0.48

0.46

1.7

1.5

0.067

0.059

detail X

1.15

0.2

1.05

0.045

0.008 0.004

0.041

EUROPEAN

PROJECTION

0.1 0.1

0.004

(1)

Z

0.6

0.3

0.024

0.012

ISSUE DATE

92-11-17
95-01-24

o

7

o

0

2000 Mar 21 33

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm

c

y

X

A

33 23

34

pin 1 index

44

1

22

Z

E

e

H

E

E

w M

b

p

12

11

A

2

A

A

1

detail X

SOT307-2

(A )

3

θ

L

p

L

w M

b

e

p

D

H

D

Z

D

B

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

mm

A

max.

2.10

0.25

0.05

1.85

1.65

0.25

UNIT A1A2A3b

cE

p

0.40

0.25

0.20

0.14

(1)

(1) (1)(1)

D

10.1

9.9

eH

10.1

9.9

12.9

0.8 1.3

12.3

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE

VERSION

IEC JEDEC EIAJ

REFERENCES

SOT307-2

2000 Mar 21 34

v M

H

D

v M

A

B

E

12.9

12.3

LL

p

0.95

0.55

0.15 0.10.15

EUROPEAN

PROJECTION

Z

D

1.2

0.8

Zywv θ

E

1.2

0.8

o

10

o

0

ISSUE DATE

95-02-04
97-08-01

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surfacemounted componentsare mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

Thistext gives averybrief insight toa complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all VSO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuitboardby screenprinting,stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering techniques can be used for all VSO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• Thepackagefootprint must incorporatesolder thievesat
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

2000 Mar 21 35

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

2000 Mar 21 36

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

NOTES

2000 Mar 21 37

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

NOTES

2000 Mar 21 38

Philips Semiconductors Preliminary specification

Speech and handsfree IC TEA1098A

NOTES

2000 Mar 21 39

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

69

Printed in The Netherlands 403502/01/pp40 Date of release: 2000 Mar 21 Document order number: 9397 750 06808