Datasheet TEA1095T-C1, TEA1095-C1, TEA1095TS-C1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1996 Mar 22
File under Integrated Circuits, IC03

1997 Nov 25

INTEGRATED CIRCUITS

TEA1095

Voice switched speakerphone IC

1997 Nov 25 2

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

FEATURES

• External power supply with power-down function

• Transmit channel with:

– externally adjustable gain
– transmit mute function

• Receive channel with:
– externally adjustable gain
– logarithmic volume control via a linear potentiometer
– receive mute function

• Duplex controller consisting of:
– signal envelope and noise envelope monitors for both

channels with:
externally adjustable sensitivity
externally adjustable signal envelope time constant
externally adjustable noise envelope time constant

– decision logic with:

externally adjustable switch-over timing
externally adjustable idle mode timing
externally adjustable dial tone detector in receive

channel

– voice switch control with:

adjustable switching range
constant sum of gain during switching
constant sum of gain at different volume settings.

APPLICATIONS

• Mains, battery or line-powered telephone sets

• Cordless telephones

• Answering machines

• Fax machines

• Hands-free car kits.

GENERAL DESCRIPTION

The TEA1095 is a bipolar circuit, that in conjunction with a
member of the TEA106X, TEA111X families of
transmission or TEA1096 transmission/listening-in circuits
offers a hands-free function. It incorporates a transmit
amplifier, a receiver channel amplifier and a duplex
controller with signal and noise monitors on both channels.

ORDERING INFORMATION

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TEA1095 DIP24 plastic dual in-line package; 24 leads (600 mil) SOT101-1
TEA1095T SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
TEA1095TS SSOP24 plastic shrink small outline package; 24 leads; body width 5.3 mm SOT340-1

1997 Nov 25 3

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

QUICK REFERENCE DATA

VBB=5V; V

GND

= 0 V; f = 1 kHz; T

amb

=25°C; MUTETX = LOW ; MUTERX = LOW; PD = LOW; R

VOL

=0Ω; measured

in test circuit of Fig.11; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

BB

supply voltage 2.9 − 12.0 V

I

BB

current consumption from pin V

BB

− 2.7 3.8 mA

G

vtx

voltage gain from TXIN to TXOUT in
transmit mode

V

TXIN

= 1 mV (RMS);

R

GATX

= 30.1 kΩ

− 15.5 − dB

∆G

vtxr

voltage gain adjustment with R

GATX

−15.5 − +24.5 dB

G

vrx

voltage gain from RXIN to RXOUT in
receive mode

V

RXIN

= 20 mV (RMS);

R

GARX

= 16.5 kΩ

− 6.5 − dB

∆G

vrxr

voltage gain adjustment with R

GARX

−20.5 − +19.5 dB
SWRA switching range − 40 − dB
∆SWRA switching range adjustment with R

SWR

referenced to

R

SWR

= 365 kΩ

−40 − +12 dB

T

amb

operating ambient temperature −25 − +75 °C

1997 Nov 25 4

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, full pagewidth

BUFFER

BUFFER

BUFFER

BUFFER

LOG

LOG

LOGIC

VOICE

SWITCH

VOLUME

CONTROL

V

BB

C

TXIN

R

MIC

R

TSEN

V

ref

R

GATX

R

IDT

C

SWT

R

STAB

R

SWR

R

VOL

C

TSEN

C

TENV

C

TNOI

C

RNOI

C

RENV

C

RSEN

R

RSEN

V

dt

R

GARX

V

BB

PD

7
13

15 MUTETX

TRANSMIT CHANNEL

to transmission
circuit

DUPLEX CONTROLLER

TEA1095

18

24

23

22
19

20

21

4

5

1

TXIN

TSEN

TENV

TNOI
RNOI

RENV

RSEN

GARX

2

RXOUT

RXIN

VOL 8

2

9

10

11

12

14

16

17

6

SWR

STAB

SWT

IDT

TXGND

TXOUT

GATX

GND

to loudspeaker
amplifier

MUTERX

RECEIVE CHANNEL

13
mV

13 mV

ATTEN­UATOR

from transmission
circuit

V I

I V

V I

I V

MBG350

1997 Nov 25 5

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

PINNING

SYMBOL PIN DESCRIPTION

MUTERX 1 receiver channel mute input
RXIN 2 receiver amplifier input
n.c. 3 not connected
GARX 4 receiver gain adjustment
RXOUT 5 receiver amplifier output
GND 6 ground reference
V

BB

7 supply voltage input
VOL 8 receiver volume adjustment
SWR 9 switching range adjustment
STAB 10 reference current adjustment
SWT 11 switch-over timing adjustment
IDT 12 idle mode timing adjustment
PD 13 power-down input
TXGND 14 ground reference for the transmit

channel
MUTETX 15 transmit channel mute input
TXOUT 16 transmit amplifier output
GATX 17 transmit gain adjustment
TXIN 18 transmit amplifier input
RNOI 19 receive noise envelope timing

adjustment
RENV 20 receive signal envelope timing

adjustment
RSEN 21 receive signal envelope sensitivity

adjustment
TNOI 22 transmit noise envelope timing

adjustment
TENV 23 transmit signal envelope timing

adjustment
TSEN 24 transmit signal envelope sensitivity

adjustment

Fig.2 Pin configuration.

handbook, halfpage

TEA1095

MBG349

1
2
3
4
5
6
7
8

9
10
11
12

MUTERX

RXIN

n.c.

GARX

RXOUT

GND

V

BB

VOL

SWR

STAB

SWT

IDT

TSEN
TENV
TNOI
RSEN
RENV
RNOI
TXIN
GATX
TXOUT
MUTETX
TXGND
PD

24
23
22
21
20
19
18
17
16
15
14
13

1997 Nov 25 6

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

FUNCTIONAL DESCRIPTION

The values given in the functional description are typical
values except when otherwise specified.

A principle diagram of the TEA1096 is shown on the left
side of Fig.3. The TEA1096 is a transmission and
listening-in circuit. It incorporates a receiving amplifier for
the earpiece, a transmit amplifier for the microphone, a
loudspeaker amplifier and a hybrid. For more details on the
TEA1096 circuit (please refer to

Data Handbook IC03

).
The right side of Fig.3 shows a principle diagram of the
TEA1095, a hands-free add-on circuit with a transmit
amplifier, a receiver amplifier and a duplex controller.

As can be seen from Fig.3, a loop is formed via the
sidetone network in the transmission circuit and the
acoustic coupling between loudspeaker and microphone
of the hands-free circuit. When this loop gain is greater
than 1, howling is introduced. In a full duplex application,
this would be the case. The loop-gain has to be much

lower than 1 and therefore has to be decreased to avoid
howling. This is achieved by the duplex controller. The
duplex controller of the TEA1095 detects which channel
has the ‘largest’ signal and then controls the gains of the
transmit amplifier and the receiver amplifier such that the
sum of the gains remains constant. As a result, the circuit
can be in three stable modes:

1. Transmit mode (Tx mode): the gain of the transmit
amplifier is at its maximum and the gain of the receiver
amplifier is at its minimum.

2. Receive mode (Rx mode): the gain of the receiver
amplifier is at its maximum and the gain of the transmit
amplifier is at its minimum.

3. Idle mode: the gain of the amplifiers is halfway
between their maximum and minimum value.

The difference between the maximum gain and minimum
gain is called the switching range.

Fig.3 Hands-free telephone set principles.

handbook, full pagewidth

MBG358

HYBRID

DUPLEX

CONTROL

telephone

line

acoustic
coupling

sidetone

TEA1096 TEA1095

1997 Nov 25 7

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

Supply: pins VBB, GND and PD

The TEA1095 must be supplied with an external stabilized
voltage source between pins V

BB

and GND. In idle mode,
without any signal, the internal supply current is 2.7 mA at
VBB=5V.

To reduce current consumption during pulse dialling or
register recall (flash), the TEA1095 is provided with a
power-down (PD) input. When the voltage on PD is HIGH,
the current consumption from VBB is 140 µA.

Transmit channel: pins TXIN, GATX, TXOUT, TXGND
and MUTETX

The TEA1095 has an asymmetrical transmit input (TXIN)
with an input resistance of 20 kΩ. The gain of the input
stage varies according to the mode of the TEA1095. In the
transmit mode, the gain is at its maximum; in the receive

mode, it is at its minimum and in the idle mode, it is halfway
between maximum and minimum. Switch-over from one
mode to the other is smooth and click-free. The output
capability at pin TXOUT is 20 µA (RMS).

In the transmit mode, the overall gain of the transmit
amplifier (from pin TXIN to TXOUT) can be adjusted from
0 dB to 40 dB to suit application specific requirements.
The gain is proportional to the value of R

GATX

and equals

15.5 dB with R

GATX

= 30.1 kΩ.

A capacitor must be connected in parallel with R

GATX

to
ensure stability of the transmit amplifier. Together with
R

GATX

, it also provides a first-order low-pass filter.

By applying a HIGH level on pin MUTETX, the transmit
amplifier is muted and the TEA1095 is automatically
forced into the receive mode.

Fig.4 Transmit channel.

handbook, full pagewidth

MBG357

V I I V

C

TXIN

V

BB

R

MIC

MUTETX

TXIN

from

voice

switch

to

envelope

detector

TXGND

TXOUT

GATX

to transmission
circuit

R

GATX

C

GATX

to

logic

1997 Nov 25 8

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

Receive channel

Fig.5 Receive channel.

handbook, full pagewidth

MBG356

V I

I V

R

GARX

C

GARX

GARX

RXOUT

MUTERX

to loudspeaker
amplifier

to/from

voice switch

to

envelope

detector

RXIN

from transmission
circuit

VOL

VOLUME

CONTROL

R

VOL

RECEIVER AMPLIFIER: PINS RXIN, GARX, RXOUT AND
MUTERX

The TEA1095 has an asymmetrical input (RXIN) for the
receiver amplifier with an input resistance of 20 kΩ. The
gain of the input stage varies according to the mode of the
TEA1095. In the receive mode, the gain is at its maximum;
in the transmit mode, it is at its minimum and in the idle
mode, it is halfway between maximum and minimum.
Switch-over from one mode to the other is smooth and
click-free.

In the receive mode, the overall gain of the receive
amplifier can be adjusted from −14 dB to +26 dB to suit
application specific requirements. The gain from RXIN to
RXOUT is proportional to the value of R

GARX

and equals

6.5 dB with R

GARX

= 16.5 kΩ. A capacitor connected in

parallel with R

GARX

can be used to provide a first-order

low-pass filter.
By applying a HIGH level on pin MUTERX, the receiver

amplifier is muted and the TEA1095 is automatically
forced into the transmit mode.

V

OLUME CONTROL: PIN VOL

The receiver amplifier gain can be adjusted with the
potentiometer R

VOL

. A linear potentiometer can be used to
obtain logarithmic control of the gain of the receiver
amplifier. Each 950 Ω increase of R

VOL

results in a gain
loss of 3 dB. The maximum gain reduction with the volume
control is internally limited to the switching range.

Duplex controller

S

IGNAL AND NOISE ENVELOPE DETECTORS: PINS TSEN,

TENV, TNOI, RSEN, RENV

AND RNOI

The signal envelopes are used to monitor the signal level
strength in both channels. The noise envelopes are used
to monitor background noise in both channels. The signal
and noise envelopes provide inputs for the decision logic.
The signal and noise envelopes detectors are shown in
Fig.6.

For the transmit channel, the input signal at TXIN is 40 dB
amplified to TSEN. For the receive channel, the input
signal at RXIN is 0 dB amplified to RSEN. The signals from
TSEN and RSEN are logarithmically compressed and
buffered to TENV and RENV respectively. The sensitivity
of the envelope detectors is set with R

TSEN

and R

RSEN

.

1997 Nov 25 9

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

The capacitors connected in series with the two resistors
block any DC component and form a first order high-pass
filter. In the basic application (see Fig.12), it is assumed
that V

TXIN

= 1 mV (RMS) and V

RXIN

= 100 mV (RMS)

nominal and both R

TSEN

and R

RSEN

have a value of 10 kΩ.

With the value of C

TSEN

and C

RSEN

at 100 nF, the cut-off

frequency is at 160 Hz.
The buffer amplifiers leading the compressed signals to

TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Together with
the capacitors C

TENV

and C

RENV

, the timing of the signal
envelope monitors can be set. In the basic application, the
value of both capacitors is 470 nF. Because of the
logarithmic compression, each 6 dB signal increase
means 18 mV increase of the voltage on the envelopes
TENV or RENV at room temperature. Thus, timings can be
expressed in dB/ms. At room temperature, the 120 µA
sourced current corresponds to a maximum rise-slope of
the signal envelope of 85 dB/ms. This is enough to track
normal speech signals. The 1 µA current sunk by TENV or

RENV corresponds to a maximum fall-slope of 0.7 dB/ms.
This is enough for a smooth envelope and also eliminates
the effect of echoes on switching behaviour.

To determine the noise level, the signal on TENV and
RENV are buffered to TNOI and RNOI. These buffers have
a maximum source current of 1 µA and a maximum sink
current of 120 µA. Together with the capacitors C

TNOI

and

C

RNOI

, the timing can be set. In the basic application of
Fig.12, the value of both capacitors is 4.7 µF. At room
temperature, the 1 µA sourced current corresponds to a
maximum rise-slope of the noise envelope of
approximately 0.07 dB/ms. This is small enough to track
background noise and not to be influenced by speech
bursts. The 120 µA current that is sunk corresponds to a
maximum fall-slope of approximately 8.5 dB/ms. However,
during the decrease of the signal envelope, the noise
envelope tracks the signal envelope so it will never fall
faster than approximately 0.7 dB/ms. The behaviour of the
signal envelope and noise envelope monitors is illustrated
in Fig.7.

Fig.6 Signal and noise envelope detectors.

handbook, full pagewidth

MBG355

LOG LOG

from
transmit
amplifier

from
receiver
amplifier

DUPLEX CONTROLLER

TSEN

R

TSEN

C

TSEN

C

TENV

C

TNOI

R

RSEN

C

RSEN

C

RENV

C

RNOI

TENV TNOI RSEN RENV RNOI

to logicto logic

1997 Nov 25 10

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

Fig.7 Signal and noise envelope waveforms.

handbook, full pagewidth

MBG354

INPUT SIGNAL

SIGNAL ENVELOPE

NOISE ENVELOPE

4 mV (RMS)

1 mV (RMS)

A

C

C

36 mV

36 mV

B

B

B

A

B

time

A: 85 dB/ms
B: 0.7 dB/ms

B: 0.7 dB/ms
C: 0.07 dB/ms

Fig.8 Decision logic.

handbook, full pagewidth

MBG353

13 mV

13 mV

TENV
TNOI

ATTEN­UATOR

RENV

MUTETX

RNOI

V

dt

xx11− 10 µA

+ 10 µA
+ 10 µA

x10x
1x0x
xx10 0
000x 0

V

ref

R

IDT

C

SWT

SWT

IDT

DUPLEX CONTROLLER

LOGIC

(note 1)

(1) When MUTETX = HIGH +10 µA is forced. When MUTERX = HIGH −10 µA is forced.

1997 Nov 25 11

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

DECISION LOGIC: PINS IDT AND SWT
The TEA1095 selects its mode of operation (transmit,

receive or idle mode) by comparing the signal and the
noise envelopes of both channels. This is executed by the
decision logic. The resulting voltage on pin SWT is the
input for the voice-switch.

To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference
V

ENV−NOI

= 13 mV. This so called speech/noise threshold

is implemented in both channels.
The signal on TXIN contains both speech and the signal

coming from the loudspeaker (acoustic coupling). When
receiving, the contribution from the loudspeaker overrules
the speech. As a result, the signal envelope on TENV is
formed mainly by the loudspeaker signal. To correct this,
an attenuator is connected between TENV and the
TENV/RENV comparator. Its attenuation equals that
applied to the transmit amplifier.

When a dial tone is present on the line, without monitoring,
the tone would be recognized as noise because it is a
signal with a constant amplitude. This would cause the
TEA1095 to go into the idle mode and the user of the set
would hear the dial tone fade away. To prevent this, a dial
tone detector is incorporated which, in standard
application, does not consider the input signals at RXIN as
noise when they have a level greater than 42 mV (RMS).
This level is proportional to R

RSEN

.

As can be seen from Fig.8, the output of the decision logic
is a current source. The logic table gives the relationship
between the inputs and the value of the current source. It
can charge or discharge the capacitor C

SWT

with a current
of 10 µA (switch-over). If the current is zero, the voltage on
SWT becomes equal to the voltage on IDT via the high
ohmic resistor R

IDT

(idling). The resulting voltage
difference between SWT and IDT determines the mode of
the TEA1095 and can vary between −400 mV and
+400 mV.

Table 1 Modes of TEA1095

V

SWT

− V

IDT

(mV) MODE

<−180 transmit mode
0 idle mode
>180 receive mode

The switch-over timing can be set with C

SWT

, the idle mode

timing with C

SWT

and R

IDT

. In the basic application given in

Fig.12, C

SWT

is chosen at 220 nF and R

IDT

at 2.2 MΩ.
This enables a switch-over time from transmit to receive
mode or vice-versa of approximately 13 ms (580 mV
swing on SWT). The switch-over time from idle mode to
transmit mode or receive mode is approximately 4 ms
(180 mV swing on SWT).

The switch-over time from receive mode or transmit mode
to idle mode is equal to 4 × R

IDT CSWT

and is

approximately 2 s (idle mode time).
The inputs MUTETX and MUTERX overrule the decision

logic. When MUTETX goes HIGH, the capacitor C

SWT

is
charged with 10 µA resulting in the receive mode. When
the voltage on pin MUTERX goes HIGH, the capacitor
C

SWT

is discharged with 10 µA resulting in the transmit

mode.

V

OICE-SWITCH: PINS STAB AND SWR

A diagram of the voice-switch is illustrated in Fig.9. With
the voltage on SWT, the TEA1095 voice-switch regulates
the gains of the transmit and the receive channel such that
the sum of both is kept constant.

In the transmit mode, the gain of the transmit amplifier is at
its maximum and the gain of the receive amplifier is at its
minimum. In the receive mode, the opposite applies. In the
idle mode, both transmit and receive amplifier gains are
halfway.

The difference between maximum and minimum is the so
called switching range. This range is determined by the
ratio of R

SWR

and R

STAB

and is adjustable between

0 and 52 dB. R

STAB

should be equal to 3.65 kΩ and sets
an internally used reference current. In the basic
application diagram given in Fig.12, R

SWR

is equal to
365 kΩ which results in a switching range of 40 dB. The
switch-over behaviour is illustrated in Fig.10.

In the receive mode, the gain of the receive amplifier can
be reduced using the volume control. Since the
voice-switch keeps the sum of the gains constant, the gain
of the transmit amplifier is increased at the same time (see
dashed curves in Fig.10). In the transmit mode however,
the volume control has no influence on the gain of the
transmit amplifier or the gain of the receive amplifier.
Consequently, the switching range is reduced when the
volume is reduced. At maximum reduction of volume, the
switching range becomes 0 dB.

1997 Nov 25 12

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

Fig.9 Voice switch.

handbook, full pagewidth

G

vtx

+ G

vrx =

C

VOICE SWITCH

R

STAB

R

SWR

STAB

SWR

to

transmit

amplifier

from

SWT

from

volume

control

to

receive

amplifier

DUPLEX CONTROLLER

MBG352

Where C = constant.

Fig.10 Switch-over behaviour.

handbook, halfpage

−400 −200 0 +400+200

G

vtx,

G

vrx

V

SWT −

V

IDT

(mV)

G

vtx

R

VOL

(Ω)

5700
3800

idle
mode

1900
0

0
1900
3800

5700

(10 dB/div)

Tx mode Rx mode

G

vrx

MBG351

1997 Nov 25 13

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

V

BB

=5V; V

GND

= 0 V; f = 1 kHz; T

amb

=25°C; MUTETX = LOW; MUTERX = LOW; PD = LOW; R

VOL

=0Ω; measured

in test circuit of Fig.11; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

n(max)

maximum voltage on all pins;
except pins VBB and RXIN

V

GND

− 0.4 VBB+ 0.4 V

V

RIN(max)

maximum voltage on pin RXIN V

GND

− 1.2 VBB+ 0.4 V

V

BB(max)

maximum voltage on pin V

BB

V

GND

− 0.4 12.0 V

T

stg

IC storage temperature −40 +125 °C

T

amb

operating ambient temperature −25 +75 °C

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air

TEA1095 50 K/W
TEA1095T 75 K/W
TEA1095TS 104 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply (V

BB

, PD and GND)

V

BB

supply voltage 2.9 − 12.0 V

I

BB

current consumption from pin V

BB

− 2.7 3.8 mA
POWER-DOWN INPUT PD
V

IL

LOW level input voltage V

GND

− 0.4 − 0.3 V

V

IH

HIGH level input voltage 1.5 − VBB+ 0.4 V

I

PD

power-down input current PD = HIGH − 2.5 5 µA

I

BB(PD)

current consumption from pin V

BB

in power-down mode

PD = HIGH − 140 190 µA

Transmit channel (TXIN, GATX, TXOUT, MUTETX and TXGND)

T

RANSMIT AMPLIFIER

Zi input impedance between

pins TXIN and TXGND

17 20 23 kΩ

G

vtx

voltage gain from TXIN to TXOUT
in transmit mode

V

TXIN

= 1 mV (RMS);

R

GATX

= 30.1 kΩ

− 15.5 − dB

∆G

vtxr

voltage gain adjustment with
R

GATX

−15.5 − +24.5 dB

∆G

vtxT

voltage gain variation with
temperature referenced to 25 °C

V

TXIN

= 1 mV (RMS);

T

amb

= −25 to +75 °C

−±0.3 − dB

1997 Nov 25 14

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

∆G

vtxf

voltage gain variation with
frequency referenced to 1 kHz

V

TXIN

= 1 mV (RMS);

f = 300 to 3400 Hz

−±0.3 − dB

V

notx

noise output voltage at
pin TXOUT

pin TXIN connected to
TXGND through 200 Ω in
series with 10 µF;
psophometrically
weighted (P53 curve)

−−100 − dBmp

TRANSMIT MUTE INPUT MUTETX
V

IL

LOW level input voltage V

GND

− 0.4 − 0.3 V

V

IH

HIGH level input voltage 1.5 − VBB+ 0.4 V

I

MUTETX

input current MUTETX = HIGH − 2.5 5 µA

∆G

vtxm

voltage gain reduction with
MUTETX active

MUTETX = HIGH − 80 − dB

Receive channel (RXIN, GARX, RXOUT and MUTERX)

R

ECEIVE AMPLIFIER

Zi input impedance between pins

RXIN and GND

17 20 23 kΩ

G

vrx

voltage gain from RXIN to
RXOUT in receive mode

V

RXIN

= 20 mV (RMS);

R

GARX

= 16.5 kΩ

− 6.5 − dB

∆G

vrxr

voltage gain adjustment with
R

GARX

−20.5 − +19.5 dB

∆G

vrxT

voltage gain variation with
temperature referenced to 25 °C

V

RXIN

= 20 mV (RMS);

T

amb

= −25 to +75 °C

−±0.3 − dB

∆G

vrxf

voltage gain variation with
frequency referenced to 1 kHz

V

RXIN

= 20 mV (RMS);

fi= 300 to 3400 Hz

−±0.3 − dB

V

norx(rms)

noise output voltage at pin
RXOUT (RMS value)

input RXIN short-circuited
through 200 Ω in series
with 10 µF;
psophometrically
weighted (P53 curve)

− 20 −µV

∆G

vrxv

voltage gain variation referenced
to ∆R

VOL

= 950 Ω

when total attenuation
does not exceed the
switching range

− 3 − dB

RECEIVE MUTE INPUT MUTERX
V

IL

LOW level input voltage V

GND

− 0.4 − 0.3 V

V

IH

HIGH level input voltage 1.5 − VBB+ 0.4 V

I

MUTERX

input current MUTERX = HIGH − 2.5 5 µA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1997 Nov 25 15

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

∆G

vrxm

gain reduction with MUTERX
active

MUTERX = HIGH − 80 − dB

Envelope and noise detectors (TSEN, TENV, TNOI, RSEN, RENV and RNOI)

P

REAMPLIFIERS

G

v(TSEN)

voltage gain from TXIN to TSEN − 40 − dB

G

v(RSEN)

voltage gain between RXIN to
RSEN

− 0 − dB

LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT

ϕ

det(TSEN)

sensitivity detection on pin TSEN;
voltage change on pin TENV
when doubling the current from
TSEN

I

TSEN

= 0.8 to 160 µA − 18 − mV

ϕ

det(RSEN)

sensitivity detection on pin RSEN;
voltage change on pin RENV
when doubling the current from
RSEN

I

RSEN

= 0.8 to 160 µA − 18 − mV

SIGNAL ENVELOPE DETECTORS
I

source(ENV)

maximum current sourced from
pin TENV or RENV

− 120 −µA

I

sink(ENV)

maximum current sunk by
pin TENV or RENV

0.75 1 1.25 µA

∆V

ENV

voltage difference between
pins RENV and TENV

when 10 µA is sourced
from both RSEN and
TSEN; envelope detectors
tracking; note 1

−±3−mV

NOISE ENVELOPE DETECTORS
I

source(NOI)

maximum current sourced from
pins TNOI or RNOI

0.75 1 1.25 µA

I

sink(NOI)

maximum current sunk by
pins TNOI or RNOI

− 120 −µA

∆V

NOI

voltage difference between
pins RNOI and TNOI

when 2 µA is sourced
from both RSEN and
TSEN; noise detectors
tracking; note 1

−±3−mV

DIAL TONE DETECTOR
V

RINDT(rms)

threshold level at pin RXIN
(RMS value)

− 42 − mV

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1997 Nov 25 16

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

Notes

1. Corresponds to ±1 dB tracking.

2. Corresponds to 4.3 dB noise/speech recognition level.

Decision logic (IDT and SWT)

S

IGNAL RECOGNITION

∆V

Srx(th)

threshold voltage between
pins RENV and RNOI to
switch-over from receive to idle
mode

V

RXIN

< V

RINDT

; note 2 − 13 − mV

∆V

Stx(th)

threshold voltage between
pins TENV and TNOI to
switch-over from transmit to idle
mode

note 2 − 13 − mV

S

WITCH-OVER

I

source(SWT)

current sourced from pin SWT
when switching to receive mode

7.5 10 12.5 µA

I

sink(SWT)

current sunk by pin SWT when
switching to transmit mode

7.5 10 12.5 µA

I

idle(SWT)

current sourced from pin SWT in
idle mode

− 0 −µA

Voice switch (STAB and SWR)

SWRA switching range − 40 − dB
∆SWRA switching range adjustment with R

SWR

referenced to

R

SWR

= 365 kΩ

−40 − +12 dB

∆G

v

 voltage gain variation from

transmit mode to idle mode on
both channels

− 20 − dB

G

tr

gain tracking (G

vtx+Gvrx

) during

switching, referenced to idle mode

−±0.5 − dB

SYMBOL P ARAMETER CONDITIONS MIN. TYP . MAX. UNIT

1997 Nov 25 17

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

TEST AND APPLICATION INFORMATION

handbook, full pagewidth

R

GATX

C

GATX

C

RXIN

MUTETX

TXOUT

GATX

RXIN

TXGND

GND

21 20 19 24 23 22 1 8

IDT

RSEN RENV RNOI TSEN TENV TNOI MUTERX VOL

RXOUT

GARX

TXIN

PD

V

BB

R

IDT

C

SWT

220 nF

SWT STAB

SWR

2.2 MΩ

R

STAB

3.65 kΩ 365 kΩ

R

SWR

C

VBB

16.5

kΩ

10 µF

4.7 µF

5.0 V

220 nF

C

TXIN

R

GARX

C

GARX

R

VOL

C

TNOI

C

TENV

470 nF

C

TSEN

100 nF

C

RNOI

4.7 µF

C

RENV

470 nF

C

RSEN

100 nF

R

RSEN

10 kΩ

30.1 kΩ

R

TSEN

10 kΩ

15 12 11 10 9

7

13

18

4

5

6

14

2

17

16

220 nF

TEA1095

MBG359

Fig.11 Test circuit.

1997 Nov 25 18

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

handbook, full pagewidth

TEA106X TEA1095

line

V

CC

V

EE

SLPE

LN

QR +

MIC −

MIC +

R

RSEN

C

RSEN

R

GARX

C

GARX

C

RENV

C

RNOI

C

TSEN

C

TNOI

C

TENV

C

TXIN

C

SWT

R

TXIN

R

SWR

V

VBB

C

VBB

C

LSP

10 kΩ

30.1 kΩ

20 Ω

2.2 kΩ

365 kΩ

R

STAB

R

IDT

3.65 kΩ

2.2 MΩ

16.5 kΩ
C

RXOUT

100 nF

+5 V

R9

6

14

17

16

2

18

7

3

4

21 20 19 24 23 22 8

5

620 Ω

R1

R

TSEN

R

VOL

10 kΩ

100 nF

C

RXIN

C

GATX

R

GATX

100 nF

470 nF

470 nF

4.7 µF

100 µF

C1

4.7 µF

10 µF

100 nF

100 nF

220 nF

13

RXIN

PD MUTETX MUTERX IDT SWT SWRSTAB

TXOUT

GATX

TXGND

GND

RSEN RENV RNOI TSEN TENV TNOI VOL

TXIN

V

BB

GARX

n.c.

RXOUT

15 1

12 11 10 9

C7

100 nF

C8

100 nF

LOUDSPEAKER

AMPLIFIER

LSP

from

microcontroller

MBG360

Fig.12 Basic application diagram.

1997 Nov 25 19

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

handbook, full pagewidth

interrupter

S1

DP

S2

S3

S4 +
MUTET

MUTETX

MUTET

TXOUT

TXGND

HSQRP

RXIN

GND

R5

R7

R4

R1

R2

R6

R3

15 1 13

C1

V

BB

V

BB

V

EE

V

DD

C

DLL

C

QLS

C

QRP

C

RXIN

C

HFTXIN

C

TXIN

C

VBB

C

RXOUT

47 µF

C

VDD

100 µF

R

DD

390 Ω

R

SLPE

20 Ω

10 µF

100 µF

470 µF

C

HSMIC

100 µF

100

nF

C

MICP

100 nF

C

MICM

100 nF

100 nF

HFTXIN

HFQLS

470
nF

DTMF

DTMF

HSMIC

QRP

QLS

S1

S2

S4

S3

MICM

MICP

LN

DLL/
DIL

LSI

SLPE

VOL

TXIN

RXOUT

MUTERX

from

microcontroller

PD

16

7

18

8

5

2

14

6

tip

ring

TEA1096

TEA1095

100 nF

R

VOL

MICRO-

CONTROLLER

MBG361

Fig.13 Application example.

MODE

SWITCH

MUTET

S1 S2 S3 S4

Hands-free OPEN OPEN TXOUT OPEN LOW
Handset CLOSED CLOSED HSMIC OPEN DON’T CARE
Handset plus listening-in OPEN CLOSED HSMIC CLOSED HIGH

1997 Nov 25 20

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

PACKAGE OUTLINES

UNIT

A

max.

1 2

b

1

cD E e M

H

L

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

SOT101-1

92-11-17
95-01-23

A

min.

A

max.

b

w

M

E

e

1

1.7

1.3

0.53

0.38

0.32

0.23

32.0

31.4

14.1

13.7

3.9

3.4

0.252.54 15.24

15.80

15.24

17.15

15.90

2.25.1 0.51 4.0

0.066

0.051

0.021

0.015

0.013

0.009

1.26

1.24

0.56

0.54

0.15

0.13

0.010.10 0.60

0.62

0.60

0.68

0.63

0.0870.20 0.020 0.16

051G02 MO-015AD

M

H

c

(e )

1

M

E

A

L

seating plane

A

1

w M

b

1

e

D

A

2

Z

24

1

13

12

b

E

pin 1 index

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

Z

max.

(1)

(1)(1)

DIP24: plastic dual in-line package; 24 leads (600 mil)

SOT101-1

1997 Nov 25 21

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

UNIT

A

max.

A1A2A3b

p

cD

(1)E(1) (1)

eHELLpQ

Z

ywv θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

2.65

0.30

0.10

2.45

2.25

0.49

0.36

0.32

0.23

15.6

15.2

7.6

7.4

1.27

10.65

10.00

1.1

1.0

0.9

0.4

8
0

o
o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.1

0.4

SOT137-1

X

12

24

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

c

L

v M

A

13

(A )

3

A

y

0.25

075E05 MS-013AD

pin 1 index

0.10

0.012

0.004

0.096

0.089

0.019

0.014

0.013

0.009

0.61

0.60

0.30

0.29

0.050

1.4

0.055

0.419

0.394

0.043

0.039

0.035

0.016

0.01

0.25

0.01

0.004

0.043

0.016

0.01

e

1

0 5 10 mm

scale

SO24: plastic small outline package; 24 leads; body width 7.5 mm

SOT137-1

95-01-24
97-05-22

1997 Nov 25 22

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

UNIT A1A2A3b

p

cD

(1)E(1) (1)

eHELLpQZywv θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

0.21

0.05

1.80

1.65

0.38

0.25

0.20

0.09

8.4

8.0

5.4

5.2

0.65 1.25

7.9

7.6

0.9

0.7

0.8

0.4

8
0

o
o

0.13 0.10.2

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

1.03

0.63

SOT340-1 MO-150AG

93-09-08
95-02-04

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

112

24 13

0.25

y

pin 1 index

0 2.5 5 mm

scale

SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm

SOT340-1

A

max.

2.0

1997 Nov 25 23

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

DIP

SOLDERING BY DIPPING OR BY WA VE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO and SSOP

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO and

SSOP packages.
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating

method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

W

AVE SOLDERING

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

R

EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Nov 25 24

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1997 Nov 25 25

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

NOTES

1997 Nov 25 26

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

NOTES

1997 Nov 25 27

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1997 SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. [phone], Fax. [phone]

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. [phone], Fax. [phone]

Norway: Box 1, Manglerud 0612, OSLO,
Tel. [phone], Fax. [phone]

Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]
Middle East: see Italy

Printed in The Netherlands 417027/1200/03/pp28 Date of release: 1997 Nov 25 Document order number: 9397 750 03122