Dual Dolby* B-type noise reduction
circuit, automatic music search,
with differential outputs and mute
Preliminary specification
Supersedes data of August 1993
File under Integrated Circuits, IC01
1996 Jun 06
Page 2
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
FEATURES
• Dual noise reduction (NR) channels
• Head pre-amplifiers
• Reverse head switching
• Automatic Music Search (AMS)
• Mute position
• Equalization with electronically switched time constants
• Dolby reference level = 387.5 mV
• 32 pins
• Switch inputs TTL compatible
• Differential output stage has:
– Capability to drive 1.2 nF capacitive load
– Capability to drive 1 kΩ load
– Short-circuit proof
– Short-circuit proof to 16 V via coupling capacitor.
• Improved EMC behaviour.
GENERAL DESCRIPTION
The TEA0678 is a bipolar integrated circuit that provides
two channels of Dolby B noise reduction for playback
applications in car radios. It includes head and
equalization amplifiers with electronically switchable time
constants. Furthermore it includes electronically
switchable inputs for tape drivers with reverse heads.
This device also detects pauses of music in Automatic
Music Search (AMS) mode, with a delay time fixed
externally by a resistor. The short-circuit proof output
stage of the TEA0678 is differential and provides muting.
The device will operate with power supplies in the range of
7.6 to 12 V, output overload level increasing with increase
in supply voltage. Current drain varies with supply voltage,
noise reduction on/off and AMS on/off so it is advisable to
use a regulated power supply or a supply with a long time
constant.
.Current drain varies with these variables:
Supply voltage
Noise reduction on/off
AMS on/off.
TEA0678
Because of this current drain variation it is advisable to use
a regulated power supply or a supply with a long time
constant.
QUICK REFERENCE DATA
SYMBOLPARAMETERMIN.TYP.MAX.UNIT
V
CC
I
CC
SN+
-------------N
ORDERING INFORMATION
TYPE
NUMBER
TEA0678SDIP32
TEA0678TSO32plastic small outline package; 32 leads; body width 7.5 mmSOT287-1
Remark Dolby*: Available only to licensees of Dolby Laboratories Licensing Corporation, San Francisco, CA94111,
USA, from whom licensing and application information must be obtained. Dolby is a registered trade-mark of Dolby
Laboratories Licensing Corporation.
supply voltage7.61012V
supply current−2528mA
signal plus noise-to-noise ratio7884−dB
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
BLOCK DIAGRAM
pF
input
head switch
LOW: INPUT 1
10 µF
180 Ω
470
from
HIGH: INPUT 2
microprocessor
pF
470
1 kΩ
10
kΩ
330
nF
17
18
TEA0678
19
PRE
AMP.
20
21
kΩ
8.2
EQ
22
AMP.
GND
ref
V
POWER
SUPPLY
CC
V
PRE
TEA0678
MED769
pF
470
100
µF
1516
14
pF
470
AMP.
10 µF
13
CC
V
12
10
kΩ
EQ
AMP.
8.2
11
180 Ω
1 kΩ
nF
kΩ
330
EQ switch from
microprocessor
handbook, full pagewidth
24
ref
V
from
microprocessor
LOW: MUTE ON
HIGH: MUTE OFF
18
kΩ
15 nF
23
24
AMS
25
LEVEL
PROCESSOR
DELAY
DETECTOR
TIME
910
15 nF
8
out
LOW: 120 µs
OPEN: 70 µs
AMS
kΩ
4.7 nF
AMS
t
R
4.7 nF
delay
time
24
kΩ
ref
V
Fig.1 Block and application diagram.
180 kΩ
26
nF
100
270 kΩ
27
nF
330
1 µF
10
µF
27
kΩ
output
B+
L
R
L
C
L
R
B−
output
28
29
30
4.7 µF
31
32
4.7 µF
DOLBY B NR CIRCUIT
AMS
15
LOGIC
kΩ
DOLBY B NR CIRCUIT
7
NR
EQ
MUTE
15
HEAD-
SWITCH
kΩ
6
5
4
23
1
180 kΩ
nF
100
270 kΩ
nF
330
1 µF
from
LOW: NR ON
OPEN: OFF
HIGH: AMS ON
microprocessor
4.7 µF
output
A+
L
R
L
C
L
R
A−
output
4.7 µF
1996 Jun 063
Page 4
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
PINNING
SYMBOLPINDESCRIPTION
OUTA−1negative output channel A
OUTA+2positive output channel A
NR/AMS3noise reduction/music search switch
INCA4input mute/output stage channel A
OUTCA5output Dolby B processor channel A
INTA6integrating filter channel A
CONTRA7control voltage channel A
HPA8high-pass filter channel A
SCA9side chain channel A
TD10delay time constant
EQA11equalizing output channel A
EQFA12equalizing feedback channel A
V
CC
13supply voltage
INA114input channel A1 (forward or reverse)
V
ref
15reference voltage
INA216input channel A2 (reverse or forward)
INB217input channel B2 (reverse or forward)
HS18head switch input
INB119input channel B1 (forward or reverse)
GND20ground
EQFB21equalizing feedback channel B
EQB22equalizing output channel B
AMSEQ23AMS output and EQ switch input
SCB24side chain channel B
HPB25high-pass filter channel B
CONTRB26control voltage channel B
INTB27integrating filter channel B
OUTCB28output Dolby B processor channel B
INCB29input mute/output stage channel B
MUTE30mute switch
OUTB+31positive output channel B
OUTB−32negative output channel B
handbook, halfpage
OUTA−
OUTA+
NR/AMS
OUTCA
CONTRA
1
2
3
INCA
4
5
INTA
6
7
HPA
8
9
10
11
12
13
14
15
16
TEA0678
MED770
SCA
TD
EQA
EQFA
V
CC
INA1
V
ref
INA2
Fig.2 Pin configuration.
TEA0678
OUTB−
32
OUTB+
31
MUTE
30
INCB
29
OUTCB
28
INTB
27
CONTRB
26
HPB
25
SCB
24
AMSEQ
23
EQB
22
EQFB
21
GND
20
INB1
19
HS
18
INB2
17
1996 Jun 064
Page 5
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
FUNCTIONAL DESCRIPTION
Noise Reduction (NR) is enabled when pin NR/AMS is
connected to ground and disabled when open-circuit (left
floating from a 3-state output).
Dolby noise reduction only operates correctly if 0 dB Dolby
level is adjusted at 387.5 mV.
Automatic Music Search (AMS) is enabled when pin
NR/AMS is connected to HIGH (5 V) and disabled when
open-circuit (left floating from a 3-state output). In AMS
mode the signal of both channels are rectified and then
added. This means, even if one channel signal appears
inverted to the other channel, with the TEA0678 the normal
AMS function is ensured (see Figs 4, 5 and 6).
Equalization time constant switching (70 µs or 120 µs)
is achieved when pin AMSEQ is connected to GND via an
18 kΩ resistor (120 µs), or left open-circuit (70 µs).
This does not affect the AMS output signal during AMS
mode (see Fig.1).
Head switching is achieved when pin HS is connected to
GND (input IN1 active) or connected to HIGH (5 V) level
(input IN2 active). If left open-circuit IN1 is active.
Mute is enabled when pin MUTE is connected to ground
and off when connected to HIGH (5 V) level. For smooth
switching a time constant is recommended. If left
open-circuit MUTE is active.
The differential output stage of each channel is
connected via a provision to the Dolby and pre-amplifier
part. This provision may be used for any processing of the
tape signal or to add another signal. Each output drives a
resistive load of nominal 10 kΩ and is capable of driving
1kΩ, also a capacitive load of 1.2 nF to ground and
between differential outputs. Each output can be
short-circuited to a battery (16 V) via a coupling capacitor
(4.7 µF).
TEA0678
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); note1.
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
CC
V
i
supply voltage016V
input voltage (pins 1 to 32) except pin 15 (V
(NR/AMS), pin 18 (HS) and pin 30 (MUTE) to V
input voltage at pin 3 (NR/AMS), pin 18 (HS) and
); pin 3
ref
−0.3+V
CC
note 2−0.3+6.5V
CC
V
pin 30 (MUTE)
t
short
T
stg
T
amb
V
es
pin 15 (V
storage temperature−55+150°C
operating ambient temperature−40+85°C
electrostatic handling voltage for all pinsnote 3−2+2kV
) to VCC short-circuiting duration−5s
ref
note 4−500+500V
Notes
1. The device may not operate correctly when subjected to these ratings when the ratings exceed the electrical
characteristics of the device as specified in Chapter “Characteristics”. The device will recover automatically when the
environment is reduced to the requirements of the characteristics.
2. The TEA0678 allows a HIGH-level at switching pins without supply voltage (V
= 0; stand-by mode). This means a
CC
maximum input voltage of 6.5 V for the switching input pins.
VCC= 10 V; f = 20 Hz to 20 kHz; T
differential outputs (Vo=Vo+− Vo−), this corresponds to Dolby level 387.5 mV (RMS) (0 dB) at test point (OUTC);
see Fig.1; NR on/AMS off; EQ switch in the 70 µs position; unless otherwise specified.
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX. UNIT
V
CC
I
CC
α
m
G
v
G
mm
supply voltage7.61012V
supply currentpins 14, 16, 17 and 19 connected to
channel matchingf = 1 kHz; Vo= 0 dB; NR off;
voltage gain (output stage)between OUT and OUTC; f = 1 kHz;
voltage gain mismatch
(output stage)
THDtotal harmonic distortion (2nd
and 3rd harmonic)
H
R
SN+
-------------N
V
no(rms)
headroom at outputVCC= 9 V; THD = 1%; f = 1 kHz13−−dB
signal plus noise-to-noise
ratio
equivalent input noise voltage
in decode mode (RMS value)
PSRRpower supply ripple rejectionV
f
o
frequency response
measured in encode mode;
referenced to TP
α
cs
α
cc
channel separationVo= +10 dB; f = 1 kHz; see Fig.86167−dB
crosstalk between active and
inactive input
R
L
load resistance at each output
OUTA+, OUTA−, OUTB+ and
OUTB− (corresponds to 2 kΩ
at differential output)
C
L
capacitive load at each output
(between OUT+ and OUT−)
and ground
G
v
voltage gain of pre-amplifierfrom pin INA1 or INA2 to pin EQFA
=25°C; nominal load 10 kΩ; all levels are referenced to 775 mV (RMS) (0 dB) at
amb
−2528mA
V
ref
f = 1 kHz; V
= 0 dB at each output−2637mA
o
−0.5−+0.5dB
OUTA/OUTB
5.566.5dB
NR off
mismatch between OUT+ and
−0.5−+0.5dB
OUT−; f = 1 kHz; NR off
f = 1 kHz; V
f = 10 kHz; V
internal gain 40 dB; linear;
=0dB−0.080.15%
o
=6dB−0.150.3%
o
7884−dB
CCIR/ARM weighted; decode mode;
see Fig.10
NR off; unweighted;
f = 20 Hz to 20 kHz; R
= 0.25 V; f = 1 kHz; see Fig.7
i(rms)
source
=0Ω
−−1.4µV
5257−dB
for unsymmetrical signal at OUTC
at differential OUT; note 14952−dB
see Fig.10
= −25 dB; f = 0.2 kHz−22.9−24.4−25.9 dB
V
o
= 0 dB; f=1kHz−1.50+1.5dB
V
o
V
= −25 dB; f=1kHz−17.8−19.3−20.8 dB
o
= −25 dB; f=5kHz−18.1−19.6−21.1 dB
V
o
= −35 dB; f = 10 kHz−24.4−25.9−27.4 dB
V
o
NR off; f = 1 kHz; Vo= +10 dB;
7077−dB
see Fig.8
AC-coupled f = 1 kHz; Vo= 12 dB;
10−−kΩ
THD=1%
THD = 1%; note 21−−kΩ
C
at each output to ground
Lmin
0.3−1.3nF
(pins 1, 2, 31 and 32)
293031dB
and from pin INB1 or INB2 to
pin EQFB; f = 1 kHz
DC input offset voltage−2−mV
input bias current−−0.4µA
equalization resistor4.75.86.9kΩ
input resistance head inputs60100−kΩ
open-loop amplificationpin INA1 or INA2 to pin EQA and
pin INB1 or INB2 to pin EQB
f = 10 kHz8086−dB
f = 400 Hz104110−dB
DC offset voltage at pins
OUT+ to OUT−
MUTE offset voltage at pins
OUT+ to OUT−
DC output offset voltage at
OUTC
pins OUTCA and OUTCB
pins INA1, INA2, INB1 and INB2
connected to V
ref
pins INA1, INA2, INB1 and INB2
connected to V
ref
NR off; pins INA1, INA2, INB1 and
INB2 connected to V
ref
−10−+10mV
−10−+10mV
−0.15−+0.15 V
DC output currentpins INA1, INA2, INB1 and INB2
connected to V
ref
pin OUTC to ground−2−−mA
pin OUTC to V
CC
0.3−−mA
pin OUT± to ground−2.5−−mA
input resistance output stage
pin OUT± to V
CC
2.5−−mA
1016−kΩ
at pins INCA and INCB
output impedance at each
−90110Ω
output OUTA+, OUTA−,
OUTB+ and OUTB−
mute depth at differential
output
NR off
f = 1 kHz−80−−dB
f = 10 kHz−80−−dB
NR off;f=10kHz; see Fig.9−25−22−19dB
music to pause
note 3−24−21−18dB
pause to music
AMS delay time rangef = 10 kHz; 0 dB burst; see Table 1−23 to 160 −ms
AMS rise/delay timef = 10 kHz; 0 dB burst2−10ms
1. For the signal to be doubled (+6 dB) at differential output as a function of OUTC, the signal-to-ripple ratio is improved
at differential output for approximately 3 dB.
2. By using the small load, the output voltage may be divided by −0.8 dB.
3. The high speed of the tape (FF, REW) at the tape head during AMS mode causes a transformation of level and
frequency of the originally recorded signal. It means a boost of signal level of approximately 10 dB and more for
recorded frequencies from 500 Hz up to 4 kHz. So the threshold level of −22 dB corresponds to signal levels in
PB mode of approximately −32 dB. The AMS inputs for each channel are pin SCA and pin SCB. As the frequency
spectrum is transformed by a factor of approximately 10 to 30 due to the higher tape speed in FF, REW, the
high-pass filter (4.7 nF/24 kΩ) removes the effect of offset voltages but does not affect the music search function.
In the application circuit (Fig.1) the frequency response of the system between tape heads input, e.g. pins INA2/INB2,
to the AMS input pins SCA and SCB is constant over the whole frequency range (see Fig.3). The frequency
dependence of threshold level is shown in Fig.3.
4. In AMS OFF mode, pin AMSEQ is HIGH level, the equalization time constant will be switched by pulling
approximately 200 µA out of pin AMSEQ. This means for the device connected to pin AMSEQ, a restriction of input
current at HIGH level less than 200 µA during AMS off; otherwise the switching of the time constants is disabled but
fixed at 120 µs. If the following devices, input consumes more than 200 µA, this input has to be disconnected in AMS
off mode. (To ensure switching the currents for the different switched modes are specified with a tolerance of±50 µA
in Chapter “Characteristics”.) For an application with a fixed EQ time constant of 120 µs the equalizing network may
be applied completely external. Change 8.2 kΩ resistor to 14 kΩ the internal resistor REQ= 5.8 kΩ is short-circuited
by fixing the EQ switch input at the 70 µs position (I
It is recommended to switch off VCC with a gradient of 400 V/s at maximum to avoid plops on tape in the event of contact
between tape and tape head while switching off.
−20
handbook, full pagewidth
(dB)
−30
−40
−50
(1)
(2)
MED623
−60
2
10
(1) AMS threshold level for application circuit (Fig.1).
(2) AMS threshold level for test circuit (Fig.9).
3
10
Fig.3 AMS threshold level.
General note on AMS
The speed of tape at the tape head during FF, REW
depends on the diameter of the tape on the spindle.
Depending on this speed, the recorded signal occurs
transformed in frequency and magnitude as a function of
the original signal in playback mode speed. For example:
A recorded pause of 3 s passes the tape head at its
highest speed in 111 ms, e.g. during FF mode near tape
end. This time constant of 111 ms corresponds to a pause
of 1.3 s at the beginning of the tape in playback mode.
4
10
(Hz)
5
10
Thus a pause T is uniquely defined outside the interval
1.3 s < T < 3 s. Inside this interval T will be recognized as
a pause or not dependent on the local point of tape,
respectively the speed of tape. Times of pauses described
investigated for this document are valid for tape devices
with a speed of its spindle (FF, REW):
ωr51
1
=
-- s
respectively 12 to 27 times of the playback speed.
1996 Jun 0610
Page 11
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
Short description ‘music search’
A system for ‘music search’ mainly consists of a level and
a time detection (see Fig.4). For adapting and decoupling
the input signal will be amplified (A), then rectified (B) and
smoothed with a time constant (C). So the voltage at (C)
corresponds to the signal level and will be compared to the
predefined pause level at the first comparator (D), the level
detector. If the signal level becomes smaller than the
pause level, the level detector(D) changes its output
signal. Due to the output level of the level detector the
handbook, full pagewidth
(A)
(B)
capacitor of the second time constant (E) will be charged,
respectively discharged. If the pause level of the input
signal remains for a certain time, the voltage at the
capacitor reaches a certain value, which corresponds to
an equivalent time value due to the charging. The voltage
at the capacitor will be compared to a predefined
time-equivalent voltage by the second comparator (F), the
time detector. If the pause level of the input signal remains
for this predefined time, the time detector (F) changes its
output level for ‘pause found’ status.
TEA0678
INA
INB
AMPLIFIER
RECTIFIER
(C)
V
I
t
1
(D)
COMPARATOR 1COMPARATOR 2
LEVEL DETECTORTIME DETECTOR
(E)(F)
V
t
t
2
OUT
MED772
Fig.4 Integrated ‘music search’ function.
In this IC the signals of both channels are first rectified and then added. The signal behind the adder is described by
V
add
V
V
= V
chanA
chanB
chanA
+ V
chanB
, where:
: absolute value channel A
: absolute value channel B
This means, even if one channel signal appears phase shifted to the other channel (at worst cases inverted), the
TEA0678 will ensure the normal AMS function.
Description of the principle timing diagram for AMS-scan mode without initial input signal (see Fig.5)
tr: rise time
handbook, full pagewidth
td: delay time
tb: burst time
tp: pause time
tf: fall time
level threshold
upper threshold
(hysteresis)
time threshold
AMS on
V
in
V
l
V
REF
V
t
t
r
t
d
t
f
tb<t
r
tp<t
d
Vl: voltage at
level detector
input
pin 7 (CONTRA)
Vt: voltage at
time detector
input
pin 26 (CONTRB)
t
t
V
AMSEQ
4.5 V
output signal
to microprocessor
t
0
t3t
4t5t6
t
Fig.5 AMS-scan mode without initial input signal.
By activating AMS-scan mode, the AMS output level
directly indicates whether the input level corresponds to a
pause level (V
= LOW) or not (V
AMSEQ
AMSEQ
= HIGH).
At t0 the AMS-scan mode is activated. Without a signal at
Vin, the following initial procedure runs until the AMS
output changes to LOW level: due to no signal at Vin the
voltage at the level detector input VI (pin 7, CONTRA)
remains below the level threshold and the second time
constant will be discharged (time detector input Vt).
When Vt passes the time threshold level, the time detector
output changes to LOW level. Now the initial procedure is
completed.
If a signal burst appears at t3, the level detector input
voltage rises immediately and causes its output to charge
the second time constant, which supplies the input voltage
Vt for the time detector. When Vt passes the upper
t
t
t8t9t
7
10
t11t12t13t
14t15
MED773
threshold level after the rise time tr (at t4), the AMS output
changes to HIGH. If the signal burst ends at t5 the level
detector input VI falls to its LOW level. When passing the
level threshold at t6, the discharging of the second time
constant begins. Now the circuit measures the delay time
td, which is externally fixed by a resistor and defines the
length of a pause to be detected. If no signal appears at V
within the time interval td, the time detector output switches
the AMS output to LOW level at t7.
If a plop noise pulse appears at Vin (t8) with a pulse width
less than the rise time tr>tb, the plop noise will not be
detected as music. The AMS output remains LOW.
Similarly the system handles ‘no music pulses’ tp: when
music appears at t11 with a small interruption at t13, this
interruption will not affect the AMS output for tp<td.
Description of the principle timing diagram for AMS-scan mode with initial input signal (see Fig.6)
tr: rise time
handbook, full pagewidth
td: delay time
tb: burst time
tp: pause time
tf: fall time
level threshold
upper threshold
(hysteresis)
V
V
REF
in
V
V
l
t
AMS on
t
d
t
f
tb<t
r
tp<t
r
Vl: voltage at
level detector
input
pin 7 (CONTRA)
Vt: voltage at
time detector
input
pin 26 (CONTRB)
t
t
time threshold
V
AMSEQ
4.5 V
output signal
to microprocessor
t0t
t5t
1
t
6
7
t8t9t
10
Fig.6 AMS-scan mode with initial input signal.
At t0 the AMS-scan mode is activated. With an input signal
at Vin, the following initial procedure runs until the circuit
gets a steady state status.
Due to the signal at Vin the voltage at the level detector
input VI (pin 7, CONTRA) slides to a value which is defined
by a limiter. This voltage causes the level detector output
charging the second time constant (time detector input Vt)
to its maximum voltage level at t1. Now the initial
procedure is completed.
t
t
t11t12t13t
t
15
14
MED774
The following behaviour does not differ from the
description in Section “Description of the principle timing
diagram for AMS-scan mode without initial input signal
(see Fig.5)”.
1996 Jun 0613
Page 14
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
TEST AND APPLICATION INFORMATION
17
from
LOW: INPUT 1
HIGH: INPUT 2
microprocessor
10 µF
out
AMS
10 kΩ
18
TEA0678
1920
PRE
AMP.
21
EQ
20 kΩ
22
23
AMP.
GND
ref
V
POWER
SUPPLY
PRE
CC
V
EQ
TEA0678
MED775
100
µF
1516
14
AMP.
= 10 V
CC
V
13
12
AMP.
11
µF
10 kΩ
1000
1 kHz
0.25 V RMS
nF
100
10 kΩ
AMS
delay
10 µF
time
20 kΩ
t
R
andbook, full pagewidth
V
HIGH: MUTE OFF
24 kΩ
ref
from
microprocessor
L
R
L
R
EQ
4.7 nF
10 µF
27
kΩ
18 kΩ
70 µs
180 kΩ
nF
100
nF
330
1 µF
output
B+
L
C
B−
output
4.7 µF
4.7 µF
15 nF
270 kΩ
24
AMS
25
DOLBY B NR CIRCUIT
26
27
28
29
30
31
32
LEVEL
PROCESSOR
DELAY
EQ
AMS
LOGIC
15
kΩ
DETECTOR
TIME
NR
MUTE
15
HEAD-
SWITCH
kΩ
910
15 nF
8
DOLBY B NR CIRCUIT
7
270 kΩ
6
5
4
4.7 µF
23
1
4.7 µF
100
330
1 µF
output
output
180 kΩ
nF
nF
A+
L
C
A−
ON
4.7 nF
NR
L
R
L
R
24
kΩ
ref
V
LOW: NR ON
Fig.7 Test circuit for power supply ripple rejection.
1996 Jun 0614
Page 15
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
17
from
LOW: INPUT 1
microprocessor
HIGH: INPUT 2
10 µF
out
AMS
10 kΩ
18
TEA0678
19
PRE
AMP.
20
21
EQ
20 kΩ
22
23
AMP.
GND
ref
V
POWER
SUPPLY
CC
V
PRE
EQ
AMP.
AMP.
TEA0678
MED776
100
µF
1516
Ω
= 10 V
CC
V
20 kΩ
200
pF
470
10 V
10
µF
nF
100
10 kΩ
10 µF
AMS
delay
time
t
R
14
13
12
11
ndbook, full pagewidth
HIGH: MUTE OFF
24 kΩ
ref
V
from
microprocessor
L
R
L
R
27
EQ
10 µF
70 µs
4.7 nF
kΩ
180 kΩ
100
330
1 µF
output
L
C
output
18 kΩ
24
AMS
15 nF
25
DOLBY B NR CIRCUIT
26
nF
270 kΩ
27
nF
B+
B−
28
29
30
4.7 µF
31
32
4.7 µF
LEVEL
PROCESSOR
DELAY
EQ
AMS
LOGIC
15
kΩ
DETECTOR
TIME
NR
MUTE
15
HEAD-
SWITCH
kΩ
910
15 nF
8
DOLBY B NR CIRCUIT
7
270 kΩ
6
5
4
4.7 µF
23
1
4.7 µF
100
330
output
output
24
kΩ
4.7 nF
ref
V
180 kΩ
nF
nF
1 µF
LOW: NR ON
ON
NR
L
A+
R
L
C
L
A−
R
Fig.8 Test circuit for channel separation.
1996 Jun 0615
Page 16
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
input
voltage
17
from
LOW: INPUT 1
microprocessor
HIGH: INPUT 2
10 µF
out
AMS
10 kΩ
18
TEA0678
19
PRE
AMP.
20
21
EQ
20 kΩ
22
23
AMP.
GND
ref
V
POWER
SUPPLY
CC
V
PRE
EQ
AMP.
AMP.
TEA0678
MED777
100
µF
1516
14
= 10 V
CC
V
nF
100
13
12
10 kΩ
AMS
delay
10 µF
time
20 kΩ
11
t
R
handbook, full pagewidth
HIGH: MUTE OFF
24 kΩ
ref
V
from
microprocessor
L
R
L
R
27
EQ
10 µF
70 µs
4.7 nF
kΩ
180 kΩ
100
330
1 µF
output
L
C
output
18 kΩ
24
LEVEL
PROCESSOR
DELAY
DETECTOR
TIME
15 nF
AMS
25
910
15 nF
8
4.7 nF
24
kΩ
ref
V
Fig.9 Test circuit for AMS threshold level.
DOLBY B NR CIRCUIT
26
nF
270 kΩ
27
nF
B+
B−
28
29
30
4.7 µF
31
32
4.7 µF
AMS
15
LOGIC
kΩ
NR
EQ
MUTE
15
HEAD-
SWITCH
kΩ
DOLBY B NR CIRCUIT
7
6
5
4
23
1
180 kΩ
nF
100
270 kΩ
nF
330
1 µF
HIGH: AMS ON
5 V
4.7 µF
output
output
4.7 µF
L
A+
R
L
C
L
A−
R
1996 Jun 0616
Page 17
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
17
18
TEA0678
1920
PRE
AMP.
25 kΩ
10 kΩ
21
EQ
20 kΩ
22
23
nF
24
24 kΩ
15 nF
25
AMP.
AMS
ref
V
POWER
GND
LEVEL
PROCESSOR
DELAY
SUPPLY
CC
V
DETECTOR
TIME
handbook, full pagewidth
LOW: INPUT 1
25 kΩ
CC
V
out
AMS
ref
V
from
HIGH: INPUT 2
microprocessor
i
V
10 µF
10 µF
EQ
70 µs
18 kΩ
TP
4.7
PRE
EQ
AMP.
AMP.
100
1516
200
14
470
10
= 10 V
CC
V
13
12
20 kΩ
11
R
24
910
4.7 nF
15 nF
8
TEA0678
MED778
µF
Ω
pF
µF
i
V
100
nF
10 V
10 kΩ
10 µF
AMS
delay
time
t
kΩ
TP
ref
V
from
microprocessor
HIGH: MUTE OFF
180 kΩ
26
nF
100
270 kΩ
27
nF
330
1 µF
10 µF
27
kΩ
L
R
output
B+
L
C
L
B−
R
output
28
29
30
4.7 µF
31
32
4.7 µF
DOLBY B NR CIRCUIT
AMS
15
LOGIC
kΩ
1996 Jun 0617
DOLBY B NR CIRCUIT
7
NR
EQ
MUTE
HEAD
15
HEAD-
SWITCH
kΩ
6
5
4
23
1
180 kΩ
nF
100
270 kΩ
nF
330
1 µF
LOW: NR ON
ON
NR
output
4.7 µF
output
4.7 µF
L
A+
R
L
C
L
A−
R
Fig.10 Test circuit for frequency response (channel B, encode mode).
Page 18
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
pF
470
17
Ω
200
18
pF
470
19
Ω
200
PRE
AMP.
20
10 kΩ
21
EQ
20 kΩ
22
23
24
AMP.
TEA0678
GND
ref
V
POWER
SUPPLY
CC
V
PRE
EQ
AMP.
AMP.
100
µF
1516
14
= 10 V
CC
V
13
12
20 kΩ
11
AMS
910
100
68 kΩ
delay
10 kΩ
time
470
470
nF
200
200
TEA0678
pF
40 Ω
Ω
pF
Ω
10 Ω
MBH478
24
kΩ
ndbook, full pagewidth
CC
V
5 kΩ
24 kΩ
4.7 nF
PROCESSOR
EQ
AMS
LOGIC
15
kΩ
LEVEL
DETECTOR
TIME
DELAY
NR
MUTE
HEAD-
15
SWITCH
kΩ
15 nF
8
DOLBY B NR CIRCUIT
7
270 kΩ
6
5
4
23
1
ref
V
15 nF
25
180 kΩ
26
nF
100
270 kΩ
27
nF
330
10 µF
27
kΩ
5 kΩ
28
29
30
4.7
µF
31
32
µF
4.7
DOLBY B NR CIRCUIT
AMS
4.7 nF
Fig.11 EMC test circuit.
180 kΩ
nF
100
nF
330
4.7
µF
µF
4.7
1996 Jun 0618
Page 19
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
LAYOUT OF PRINTED-CIRCUIT BOARD FOR EMC TEST CIRCUIT (FOR TEA0678T)
pagewidth
72
68
TEA0678
0 Ω
20
kΩ
270
kΩ
0 Ω
TEA0678T
27 kΩ
5 kΩ5 kΩ
Dimensions in mm.
470 pF
200 Ω
470 pF
200 Ω
10 kΩ
Fig.12 Top side with components.
1996 Jun 0619
40 Ω
10 Ω
0 Ω
0 Ω
100 nF
270
kΩ
20
kΩ
470 pF
200 Ω
470 pF
200 Ω
10 kΩ
4.7 nF4.7 nF
68 kΩ
15 nF15 nF
100 nF100 nF
MBH462
Page 20
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
pagewidth
68
72
TEA0678
Dimensions in mm.
X5
X3
4.7 µF
MP
MP
X1S1
100 µF
MP
MP
4.7 µF4.7 µF
X2
X4
Fig.13 Bottom side with components.
4.7 µF
330 nF
330 nF
MP
MP
100 µF
180 kΩ
24 kΩ
24 kΩ
180 kΩ
MP
X5
MBH461
1996 Jun 0620
Page 21
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
mm
OUTLINE
VERSION
SOT232-1
max.
4.70.513.8
12
min.
max.
IEC JEDEC EIAJ
1.3
0.8
b
1
0.53
0.40
REFERENCES
0.32
0.23
cEeM
(1)(1)
D
29.4
28.5
9.1
8.7
E
16
(1)
Z
L
3.2
2.8
EUROPEAN
PROJECTION
M
10.7
10.2
E
12.2
10.5
e
1
w
H
0.181.77810.16
ISSUE DATE
92-11-17
95-02-04
max.
1.6
1996 Jun 0621
Page 22
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
SO32: plastic small outline package; 32 leads; body width 7.5 mm
D
c
y
Z
32
17
TEA0678
SOT287-1
E
H
E
A
X
v M
A
pin 1 index
1
e
0510 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
mm
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
A
max.
2.65
0.10
A
0.3
0.1
0.012
0.004
A
A3b
0.49
0.36
0.02
0.01
p
0.27
0.18
0.011
0.007
1
2
2.45
0.25
2.25
0.096
0.01
0.086
(1)E(1)
cD
20.7
20.3
0.81
0.80
7.6
7.4
0.30
0.29
16
b
p
scale
eHELLpQZywv θ
1.27
0.050
10.65
10.00
0.42
0.39
w M
1.4
0.055
A
2
1.1
0.4
0.043
0.016
Q
A
1
detail X
1.2
0.25
1.0
0.047
0.039
(A )
L
p
L
0.250.1
0.004
0.010.01
A
3
θ
(1)
0.95
0.55
0.037
0.022
o
8
o
0
OUTLINE
VERSION
SOT287-1
IEC JEDEC EIAJ
REFERENCES
1996 Jun 0622
EUROPEAN
PROJECTION
ISSUE DATE
92-11-17
95-01-25
Page 23
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit, automatic
music search, with differential outputs and mute
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
“IC Package Databook”
our
SDIP
OLDERING BY DIPPING OR BY WA VE
S
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
R
EPAIRING SOLDERED JOINTS
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
(order code 9398 652 90011).
). If the
stg max
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
AVE SOLDERING
W
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
EPAIRING SOLDERED JOINTS
R
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
TEA0678
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 0624
Page 25
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit,
automatic music search, with differential
NOTES
TEA0678
1996 Jun 0625
Page 26
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit,
automatic music search, with differential
NOTES
TEA0678
1996 Jun 0626
Page 27
Philips SemiconductorsPreliminary specification
Dual Dolby* B-type noise reduction circuit,
automatic music search, with differential
NOTES
TEA0678
1996 Jun 0627
Page 28
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 825 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands517021/1200/02/pp28 Date of release: 1996 Jun 06Document order number: 9397 750 00896
Internet: http://www.semiconductors.philips.com/ps/
(1)ADDRESS CONTENT SOURCE July 29, 1996
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