Datasheet TDA9829T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA9829T

Downconverter for DVB

Product specification
File under Integrated Circuits, IC02

1998 Nov 09

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

FEATURES

• 5 V supply voltage

• Gain controlled IF-amplifier

GENERAL DESCRIPTION

The TDA9829T is an integrated circuit for DVB-IF
processing.

• Mixer for DVB-IF downconversion

• VCO for Quadrature Amplitude Modulation (QAM)

carrier recovery

• External VCO control

• Internal and external AGC

• DVB output level adjust via AGC adjust

• High level DVB operational output amplifier

• Mute switch for DVB output

• Tuner AGC with adjustable takeover point (TOP)

• AFC detector without extra reference circuit

• Stabilizer circuit for ripple rejection and to achieve

constant output signals.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

I

P

V

3-4(rms)

∆ϕ

SSB

α

mute

I

12(sink)

supply voltage note 1 4.5 5.0 5.5 V
supply current 81 96 111 mA
input sensitivity (RMS value) −1 dB DVB signal at output − 100 150 µV
VCO phase noise f = 100 kHz; free-running 103 107 − dBc/Hz
mute attenuation note 2 − 36 − dB
sink current maximum tuner gain

1.5 2 2.6 mA

reduction; see Fig.3

CR

stps(US)

V

11(p-p)

B

−1dB

α

H

PSRR power supply ripple rejection at

control steepness ∆I14/∆fIF for
USA

output voltage
(peak-to-peak value)

fIF= 43.75 MHz;
notes 3 and 4; see Fig.4

CL< 15 pF; RL>5kΩ; with
internal AGC

0.7 0.98 1.3 µA/kHz

1.8 2.1 2.4 V

−1 dB bandwidth CL< 15 pF; RL>5kΩ 11 12 − MHz
suppression of in-band harmonics Vo= 2.0 V (p-p) 30 35 − dB

see Fig.5 26 36 − dB

pin 11

Notes

1. Performance may be decreased at V

= 4.5 V.

P

2. This parameter is not tested during production and is only given as application information for designing the television
receiver.

3. To match the AFC output signal to different tuning systems a current source output is provided. The test circuit is
given in Fig.4. The AFC-steepness can be changed by the resistors at pin 14.

4. Depending on the ratio ∆C/C0 of the LC resonant circuit of VCO (Q0> 50; C0=C

int+Cext

; see Table 2).

1998 Nov 09 2

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA9829T SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1

BLOCK DIAGRAM

15

DVB

external

VCO

control

V

10

VCO

11

V

oDVB

2 V (p-p)

handbook, full pagewidth

DVB-IF

input

DVB

IF filter

DVB

C

C

18125

AGC

adjust

AGC

AGC VCO1AFC VCO2TAGC

DVB
AGC

tuner

AGC

TOP

TADJ

TUNER

AGC

V

iIF1

3
4

V

iIF2

DVB
AGC

external

V

AGCAGCADJ

9

8

14

AFC

DETECTOR

DVB

MIXER

2 × f

PC

16

VCO
TWD

INTERNAL

VOLTAGE

STABILIZER

19 17 1 20 6

VPGND

+5 V

V

SID

MUTESWI

Fig.1 Block diagram.

LOGIC

AGCSWI

2, 7, 13

n.c.

TDA9829T

MHB219

1998 Nov 09 3

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

PINNING

SYMBOL PIN DESCRIPTION

V

SID

n.c. 2 not connected
V

iIF1

V

iIF2

TADJ 5 tuner AGC takeover adjust (TOP)
AGCSWI 6 AGC switch input
n.c. 7 not connected
V

AGC

AGCADJ 9 AGC adjust input
V

VCO

V

oDVB

TAGC 12 tuner AGC output
n.c. 13 not connected
AFC 14 AFC output
VCO1 15 VCO1 reference circuit
VCO2 16 VCO2 reference circuit
GND 17 ground
C

AGC

V

P

MUTESWI 20 mute switch input

1 SIF down input

3 IF differential input signal voltage 1
4 IF differential input signal voltage 2

8 AGC voltage input

10 VCO control voltage
11 DVB output

18 AGC capacitor
19 supply voltage (+5 V)

handbook, halfpage

V

1

SID

2

n.c.

V

3

iIF1

V

4

iIF2

TADJ

5

TDA9829T

V

V

n.c.

AGC

VCO

6
7
8
9

10

AGCSWI

AGCADJ

Fig.2 Pin configuration.

MHB220

20
19
18
17
16
15
14
13
12
11

MUTESWI
V

P

C

AGC

GND
VCO2
VCO1
AFC
n.c.
TAGC
V

oDVB

1998 Nov 09 4

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

FUNCTIONAL DESCRIPTION
Vision IF amplifier

The vision IF amplifier consists of three AC-coupled
differential amplifier stages. Each differential stage
comprises a feedback network controlled by emitter
degeneration to control the IF gain.

VCO, Travelling Wave Divider (TWD) and AFC

The VCO operates with a resonance circuit (with L and C
in parallel) at double the IF frequency plus symbol
frequency. The VCO is controlled by integrated variable
capacitors. The control voltage required to tune the VCO
from its free-running frequency to its actual frequency is
fed to the capacitors. This control voltage is amplified and
converted into a current which represents the AFC output
signal. At centre frequency the AFC output current is equal
to zero.

The oscillator signal is divided-by-two with a TWD which
generates a differential output signal for downconverting
the IF signal.

DVB mixer

The gain controlled DVB-IF signal is downconverted to the
symbol frequency by use of a four quadrant multiplier.
The conversion signal is provided by the VCO and TWD.

DVB AGC and tuner AGC

The AGC detector charges/discharges the AGC capacitor
to the required voltage for setting the IF and tuner gain in
order to keep the DVB signal at a constant level.

A peak detector is used for the DVB AGC. The peak value
of (digital) the QAM signal is detected and controlled to a
constant value by the variable gain IF amplifier.
The detector bandwidth is adapted to the symbol
frequency (3 to 11 MHz). The external AGC time constant
is given by the IF AGC capacitor at pin 18.

The AGC capacitor voltage is transferred to an internal IF
control signal, and is fed to the tuner AGC to generate the
tuner AGC output current (open-collector output).
The tuner AGC takeover point can be adjusted. This
allows the tuner and the SWIF filter to be matched to
achieve the optimum IF input level.

The DVB output signal (V
of ±3 dB by a control voltage (∆V

) can be adjusted in a range

oDVB

) at pin 9. The internal

adj

AGC can be switched off at pin 6 and the IF gain can be
controlled by an external voltage at pin 8. The tuner AGC
is active in both instances.

DVB output amplifier

The output amplifier for the DVB signal has a high
bandwidth and delivers a 2 V (p-p) signal. The amplifier
can be switched to a mute state forced by the signal at
pin 20.

Internal voltage stabilizer

A band gap circuit internally generates a voltage of
approximately 1.25 V, independent of supply voltage and
temperature. A voltage regulator circuit, connected to this
voltage, produces a constant voltage of 3.6 V which is
used as an internal reference voltage.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

V

n

supply voltage (pin 19) maximum chip temperature of 125 °C 0 5.5 V
voltage at pins

0V

P

1 to 10, 13, 14 and 18 to 20

t

sc(max)

V

12

T

stg

T

amb

V

es

maximum short-circuit time − 10 s
tuner AGC output voltage 0 13.2 V
storage temperature −25 +150 °C
operating ambient temperature −20 +70 °C
electrostatic handling voltage machine model class B −300 +300 V

1998 Nov 09 5

V

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction
to ambient

CHARACTERISTICS

=5V; T

V

P

=25°C; see Table 1 for input frequencies; input level V

amb

taken in Fig.8; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply (pin 19)

V

P

I

P

IF amplifier (measured at f

∆V

(3-4)(rms)

V

i(3-4)(rms)

supply voltage note 1 4.5 5.0 5.5 V
supply current 81 96 111 mA

= 43.75 MHz; pins 3 and 4)

IF

input sensitivity (RMS value) −1 dB DVB signal at output − 100 150 µV
maximum input signal level

(RMS value)

∆G

IF

total gain control IF amplifier 59 64 − dB
tilt for ∆f ±3 MHz f

R

i(3-4)(diff)

C

i(3-4)(diff)

input resistance (differential) note 2 − 2.2 − kΩ

input capacitance (differential) note 2 − 1.7 − pF
DVB mixer and VCO (pins 10, 15 and 16); see notes 4 and 5 and Table 1
f

VCO(max)

f

VCO(US)

f

VCO(EU)

V

ref(rms)

maximum oscillator frequency 2(fIF+fs) 125 130 − MHz

VCO frequency for USA 2(fIF+fs) − 97.5 − MHz

VCO frequency for Europe 2(fIF+fs) − 86.0 − MHz

oscillator voltage swing between

pins 15 and 16 (RMS value)

∆ϕ

V
R

VCO

SSB

i(VCO)

VCO phase noise f = 100 kHz; free-running 103 107 − dBc/Hz

VCO control range (pin 10) see Figs 6 and 7 0 − V

VCO control input resistance

(pin 10)
CR

stps(VCO)

control steepness ∆fs/∆V

10

in free air 85 K/W

= 10 mV (RMS value); measurements

iIF(3−4)

1 dB DVB signal at output 140 200 − mV

= 6.9 MHz; 40 dB gain − 0.5 1 dB

s

− 60 − mV

P

V

50 63 76 kΩ

see Figs 6 and 7

DVB (USA) − 0.29 − MHz/V

DVB (Europe) − 0.40 − MHz/V

DVB output amplifier (pins 11 and 20)

V

o(DVB)(p-p)

DVB output signal (QAM)

(peak-to-peak value)
I

bias(int)

DC internal bias current for

emitter-follower (pin 11)
I

sink(max)

maximum AC and DC output

sink current (pin 11)
I

source(max)

maximum AC and DC output

source current (pin 11)

1998 Nov 09 6

1.8 2.1 2.4 V

1.9 2.3 2.7 mA

1.5 −−mA

2.0 −−mA

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

α

mute

V

i(mute)

I

IL

DVB AGC detector (pins 8, 9 and 18)

t

resp

I

ch

I

dch

∆V

i(AGC)

∆R

i(AGC)

∆AGC

stps

V

AGC(ext)

R

i(AGC)(ext)

mute attenuation note 2 − 36 − dB

mute switch input voltage

(pin 20)

DVB mute; note 3 1.3 − V

P

DVB no mute 0 − 0.8 V

V

LOW-level input current (pin 20) V20= 0 V 180 230 280 µA

response to an increasing

note 6 − 0.25 − ms/dB
amplitude step in the IF input
signal

response to a decreasing

note 6 − 0.25 − ms/dB
amplitude step in the IF input
signal

charging current (pin 18) − 200 −µA
discharging current (pin 18) − 200 −µA
AGC adjust input voltage range

1 2.5 4.5 V

(pin 9)
AGC adjust input resistance

8 1012kΩ

(pin 9)
AGC adjust steepness 2 V < V9<3V −−5−dB/V
external AGC voltage for DVB

see Fig.3 1 − 4.5 V
(pin 8)

external AGC input resistance

40 −−kΩ

(pin 8)

Tuner AGC (pin 12)

V

i(min)(rms)

IF input signal voltage for
minimum starting point of tuner
takeover (RMS value)

V

i(max)(rms)

IF input signal voltage for
maximum starting point of tuner
takeover (RMS value)

V

o

V

sat

V∆

TOP 12,

----------------------- ­T∆

I

sink

permissible output voltage from external source; note 2 −−13.2 V
saturation voltage I
variation of takeover point by

temperature
sink current see Fig.3

input at pins 3 and 4;
R

=22kΩ;

TOP

I

= 0.4 mA

TAGC

input at pins 3 and 4;
R

=0Ω; I

TOP

= 1.5 mA −−0.2 V

TAGC

I

= 0.4 mA − 0.03 0.07 dB/K

TAGC

TAGC

= 0.4 mA

no tuner gain reduction;
V

= 13.2 V

TAGC

maximum tuner gain

− 25mV

50 100 − mV

−−5µA

1.5 2 2.6 mA

reduction

1998 Nov 09 7

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆G

IF

AFC circuit (pin 14); see notes 7 and 8 and Fig.4
CR

stps(US)

CR

stps(EU)

DVB output signal (IF input to DVB output)

V

o(p-p)

V

O(DC)

B

−1dB

B

−3dB

α

C(DVB)

α

H

PSRR power supply ripple rejection at

IF slip by automatic gain control tuner gain current from

− 68dB

20 to 80%

control steepness ∆I14/∆fIF for

fIF= 43.75 MHz 0.7 0.98 1.3 µA/kHz

USA
control steepness ∆I14/∆fIF for

fIF= 36.15 MHz 0.45 0.70 0.95 µA/kHz

Europe

output voltage (pin 11)
(peak-to-peak value)

CL< 15 pF; RL>5kΩ; with
internal AGC

1.8 2.1 2.4 V

DC output voltage − 2.5 − V

−1 dB bandwidth CL< 15 pF; RL>5kΩ 11 12 − MHz

−3 dB bandwidth − 17 − MHz

fundamental input signal and

35 40 − dB

IF harmonics
suppression of in-band

Vo= 2.0 V (p-p) 30 35 − dB

harmonics

see Fig.5 26 36 − dB

pin 11

Notes

1. Performance may be decreased at VP= 4.5 V.

2. This parameter is not tested during production and is only given as application information for designing the television
receiver.

3. Mute state also can be achieved by leaving pin 20 open-circuit.

4. Resonance circuit of VCO: Q0> 50; C

, C

and L see Table 2.

ext

int

5. Temperature coefficient of external LC-circuit is equal to zero.

6. Response speed valid for an IF input level range of 200 µVupto70mV.

7. To match the AFC output signal to different tuning systems a current source output is provided. The test circuit is
given in Fig.4. The AFC steepness can be changed by the resistors at pin 14.

8. Depending on the ratio ∆C/C0 of the LC resonant circuit of VCO (Q0> 50; C0=C

int+Cext

; see Table 2).

Table 1 Input frequencies, symbol frequencies and VCO frequencies

SYMBOL DESCRIPTION DVB (Europe) DVB (USA) UNIT

f

s

f

IF

f

VCO

Symbol frequency 6.9 5.0 MHz
IF frequency 36.15 43.75 MHz
VCO frequency 86.0 97.5 MHz

1998 Nov 09 8

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

andbook, full pagewidth

(mV RMS)

(1) I
(2) Gain.

0.06

IF input

0.6

60

tuner

; R

TOP

gain
(dB)

70

60

50

40

30

206

10

0

−10
1 2.521.5 3 3.5 4

=22kΩ.

(3) I
(4) I

tuner
tuner

; R
; R

TOP
TOP

=11kΩ.
=0Ω.

(1) (2) (3) (4)

Fig.3 Typical IF and tuner AGC characteristic.

V18 (V)

MHB221

4.5

I

tuner
(mA)

0

1

2

handbook, full pagewidth

P

TDA9829T

VP = 5 V V

22 kΩ

I

14

14

22 kΩ

Fig.4 Measurement conditions and typical AFC characteristic.

1998 Nov 09 9

I

V

14

(V)

4.5

3.5

2.5

1.5

0.5

14

(µA)

−200

−100

0

100

200

35.75

43.45

36.15

43.75

MHB222

(source current)

(sink current)

36.55

fIF (MHz)

44.05

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

handbook, full pagewidth

100

handbook, full pagewidth

f

VCO

(MHz)

99

VP = 5 V

TDA9829T

VP = 5 V

Fig.5 Ripple rejection condition.

100 mV (f

ripple

t

MHB223

= 70 Hz)

MHA661

98

97.5

97

96

95

01 4

L1 = 115 nH and C1 = 15 pF.

Fig.6 VCO control characteristic for DVB (USA).

1998 Nov 09 10

32

5V10 (V)

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

89

handbook, full pagewidth

f

VCO

(MHz)

88

87

86

85

84

83

L1 = 248 nH and C1 = 5.6 pF.

32

Fig.7 VCO control characteristic for DVB (Europe).

MHA662

5V10 (V)01 4

1998 Nov 09 11

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

TEST CIRCUIT

DVB

22 kΩ

n.c.

tuner
AGC

output

2 V (p-p)

VP = 5 VAFC

10 µF

BC546

68 Ω

220 Ω

DVB output
75 Ω

handbook, full pagewidth

(a) no mute
(b) mute

mute switch

VP = 5 V

(b)(a)

C

AGC

2.2
µF

10 nF

22 kΩ

100

nF

L1

(1)

C1

20

19 18 17 16

15 14 13 12 11

TDA9829T

1

2

3

4

5678910

(b)

AGC

switch

n.c.

DVB

AGC external

DVB

AGC adjust

VCO

control

MHB224

DVB-IF input

(1) See Table 2.

51 Ω

n.c.

1

2

3

4

22

kΩ

TOP

(a) AGC internal
(b) AGC external

(a)

Fig.8 Test circuit.

Table 2 Test circuit values

PARAMETER Europe USA

IF frequency 36.15 MHz 43.75 MHz
VCO frequency 86.0 MHz 97.5 MHz
Oscillator circuit

lfpage

(1) C(VCO) = 8.2 pF.
(2) C1 = 5.6 pF.
(3) L1 = 248 nH.

15

(1) (2)

16

lfpage

(3)

MHB225

(1) C(VCO) = 8.2 pF.
(2) C1 = 15 pF.
(3) L1 = 115 nH.

15

(1) (2)

16

(3)

MHB225

Toko coil 5KM 369SNS - 2010Z 5KM 369SNS - 1647Z
Philips ceramic capacitor 2222 632 39478 2222 632 33129

1998 Nov 09 12

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

INTERNAL PIN CONFIGURATIONS

handbook, halfpage

1

+

1.1 kΩ

Fig.9 Pin 1; V

SID

+

3

5

1.1 kΩ
kΩ

3.6 V

kΩ

handbook, halfpage

5

3.6 V

+

2.65 V
4

MHB226

.

Fig.10 Pin 3; V

1.1 kΩ

and pin 4; V

iIF1

iIF2

2.65 V

MHB227

.

handbook, halfpage

30 kΩ

20
kΩ

+

9 kΩ

5

1.9 V

MHB228

3.6 V

Fig.11 Pin 5; TADJ.

1998 Nov 09 13

handbook, halfpage

26 kΩ

+

6

MHB229

Fig.12 Pin 6; AGCSWI.

3.6 V

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

handbook, halfpage

+

8

Fig.13 Pin 8; V

50 kΩ

AGC

.

MHB230

handbook, halfpage

+

9

1.6 kΩ

Fig.14 Pin 9; AGCADJ.

12 kΩ

10.1 kΩ

3.6 V

17.2 kΩ

MHB231

handbook, halfpage

+

+

10

50 kΩ 50 kΩ

12.5 kΩ

2.7 V

Fig.15 Pin 10; V

VCO

VCO

MHB232

5 µA

.

1998 Nov 09 14

handbook, halfpage

+

11

Fig.16 Pin 11; V

+

2.7 mA

5.1 kΩ

5.1 kΩ

oDVB

10 µA

MHB233

.

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

handbook, halfpage

handbook, halfpage

+

+

handbook, halfpage

12

2.5 mA

Fig.17 Pin 12; TAGC.

+

MHB234

14

200 µA

1 kΩ 1 kΩ

MHB235

Fig.18 Pin 14; AFC.

15

420 Ω

+

16

420 Ω

MHB236

2.8 V

Fig.19 Pin 15; VCO1 and pin 16; VCO2.

1998 Nov 09 15

handbook, halfpage

GND

17

MHB237

Fig.20 Pin 17; GND.

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

handbook, halfpage

+

+

18

50 kΩ

++

200 µA

200 µA

Fig.21 Pin 18; C

MHB238

AGC

handbook, halfpage

.

19

Fig.22 Pin 19; VP.

+

MHB239

handbook, halfpage

+

20

13

kΩ

3.6 V

MHB240

Fig.23 Pin 20; MUTESWI.

1998 Nov 09 16

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

PACKAGE OUTLINE

SO20: plastic small outline package; 20 leads; body width 7.5 mm

D

c

y

Z

20

pin 1 index

1

e

11

A

2

10

w M

b

p

SOT163-1

E

H

E

Q

A

1

L

p

L

detail X

(A )

A

X

v M

A

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE

VERSION

SOT163-1

A

max.

2.65

0.10

A

0.30

0.10

0.012

0.004

A2A

1

2.45

2.25

0.096

0.089

IEC JEDEC EIAJ

075E04 MS-013AC

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

13.0

7.6

7.4

0.30

0.29

1.27

0.050

12.6

0.51

0.49

REFERENCES

1998 Nov 09 17

eHELLpQ

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

PROJECTION

0.25

0.25 0.1

0.01

0.01

EUROPEAN

ywv θ

Z

0.9

0.4

8

0.004

ISSUE DATE

0.035

0.016

95-01-24
97-05-22

0

o
o

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all SO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1998 Nov 09 18

Philips Semiconductors Product specification

Downconverter for DVB TDA9829T

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Nov 09 19

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone]

Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 545104/750/01/pp20 Date of release: 1998Nov 09 Document order number: 9397 750 04575