Datasheet TDA8927TH, TDA8927J Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8927

Power stage 2 × 80 W class-D
audio amplifier

Objective specification
File under Integrated Circuits, IC01

2001 Dec 11

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

CONTENTS

1 FEATURES
2 APPLICATIONS
3 GENERAL DESCRIPTION
4 QUICK REFERENCE DATA
5 ORDERING INFORMATION
6 BLOCK DIAGRAMS
7 PINNING INFORMATION
8 FUNCTIONAL DESCRIPTION

8.1 Power stage

8.2 Protections

8.2.1 Overtemperature

8.2.2 Short-circuit across the loudspeaker terminals

8.3 BTL operation
9 LIMITING VALUES
10 THERMAL CHARACTERISTICS
11 QUALITY SPECIFICATION
12 DC CHARACTERISTICS
13 AC CHARACTERISTICS
14 SWITCHING CHARACTERISTICS

14.1 Duty factor

TDA8927

15 TEST AND APPLICATION INFORMATION

15.1 BTL application

15.2 Remarks

15.3 Output power

15.4 Reference designs

15.5 Reference design bill of material

15.6 Curves measured in reference design
16 PACKAGE OUTLINES
17 SOLDERING

17.1 Introduction

17.2 Through-hole mount packages

17.2.1 Soldering by dipping or by solder wave

17.2.2 Manual soldering

17.3 Surface mount packages

17.3.1 Reflow soldering

17.3.2 Wave soldering

17.3.3 Manual soldering

17.4 Suitability of IC packages for wave,reflow and
dipping soldering methods

18 DATA SHEET STATUS
19 DEFINITIONS
20 DISCLAIMERS

2001 Dec 11 2

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

1 FEATURES

• High efficiency (>94%)

• Operating voltage from ±15 to ±30 V

• Very low quiescent current

• High output power

• Short-circuit proof across the load, only in combination

with controller TDA8929T

• Diagnostic output

• Usable as a stereo Single-Ended (SE) amplifier or as a

mono amplifier in Bridge-Tied Load (BTL)

• Electrostatic discharge protection (pin to pin)

• Thermally protected, only in combination with controller

TDA8929T.

2 APPLICATIONS

• Television sets

• Home-sound sets

TDA8927

• Multimedia systems

• All mains fed audio systems

• Car audio (boosters).

3 GENERAL DESCRIPTION

The TDA8927 is the switching power stage of a two-chip
set for a high efficiency class-D audio power amplifier
system. The system is split into two chips:

• TDA8927J/ST/TH; a digital power stage in a DBS17P,

RDBS17P or HSOP24 power package

• TDA8929T; the analog controller chip in a SO24

package.

With this chip set a compact 2 × 80 W audio amplifier
systemcanbebuilt,operatingwithhighefficiencyand very
low dissipation. No heatsink is required, or depending on
supply voltage and load, a very small one. The system
operates over a wide supply voltage range from
±15 up to ±30 V and consumes a very low quiescent
current.

4 QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

General; VP= ±25 V

V

P

I

q(tot)

η efficiency P

supply voltage ±15 ±25 ±30 V
total quiescent current no load connected − 35 45 mA

=30W − 94 − %

o

Stereo single-ended configuration

P

o

output power RL=4Ω; THD = 10%; VP= ±25 V 60 65 − W

R

=4Ω; THD = 10%; VP= ±27 V 74 80 − W

L

Mono bridge-tied load configuration

P

o

output power RL=4Ω; THD = 10%; VP= ±17 V 90 110 − W

R

=8Ω; THD = 10%; VP= ±25 V 120 150 − W

L

5 ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

TDA8927J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length

12 mm)

TDA8927ST RDBS17P plastic rectangular-DIL-bent-SIL power package; 17 leads (row

spacing 2.54 mm)

TDA8927TH HSOP24 plastic, heatsink small outline package; 24 leads; low stand-off

height

SOT243-1

SOT577-1

SOT566-2

2001 Dec 11 3

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

6 BLOCK DIAGRAMS

handbook, full pagewidth

EN1

SW1

REL1

STAB

DIAG

POWERUP

EN2

SW2

REL2

4
1
2
9

3

15

14
17
16

TDA8927J

TDA8927ST

CONTROL

AND

HANDSHAKE

temp

TEMPERATURE SENSOR

current

CURRENT PROTECTION

CONTROL

AND

HANDSHAKE

AND

DRIVER

HIGH

DRIVER

LOW

DRIVER

HIGH

DRIVER

LOW

V

DD2VDD1

13 5

V

V

SS1

DD2

TDA8927

6

BOOT1

7

OUT1

12

BOOT2

11

OUT2

810

V

SS1VSS2

MGW138

Fig.1 Block diagram of TDA8927J and TDA8927ST.

2001 Dec 11 4

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

handbook, full pagewidth

LIM

EN1

SW1

REL1

STAB

DIAG

POWERUP

EN2

SW2

REL2

STAB

n.c.

17

24
21
22
6

23

14

13
16
15
7

4

1, 12, 18, 20

TDA8927TH

CONTROL

AND

HANDSHAKE

temp

TEMPERATURE SENSOR

current

CURRENT PROTECTION

CONTROL

AND

HANDSHAKE

DRIVER

HIGH

DRIVER

LOW

AND

DRIVER

HIGH

DRIVER

LOW

19 5 8

V

SS(sub)

V

DD2VDD1

11 2

V

V

V

SS1VSS2

SS1

DD2

TDA8927

3

BOOT1

4

OUT1

10

BOOT2

9

OUT2

MGW140

Fig.2 Block diagram of TDA8927TH.

2001 Dec 11 5

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

TDA8927

audio amplifier

7 PINNING INFORMATION

SYMBOL

SW1 1 1 21 digital switch input channel 1
n.c. −−1 not connected
REL1 2 2 22 digital control output channel 1
DIAG 3 3 23 digital open-drain output for overtemperature and

EN1 4 4 24 digital enable input for channel 1
V

DD1

BOOT1 6 6 3 bootstrap capacitor channel 1
STAB −−6 decoupling internal stabilizer for logic supply
OUT1 7 7 4 PWM output channel 1
STAB −−7 decoupling internal stabilizer for logic supply
V

SS1

STAB 9 9 − decoupling internal stabilizer for logic supply
V

SS2

OUT2 11 11 9 PWM output channel 2
BOOT2 12 12 10 bootstrap capacitor channel 2
n.c. −−12 not connected
V

DD2

EN2 14 14 13 digital enable input for channel 2
POWERUP 15 15 14 enable input for switching-on internal reference

REL2 16 16 15 digital control output channel 2
SW2 17 17 16 digital switch input channel 2
LIM −−17 current input for setting maximum load current limit
n.c. −−18 not connected
V

SS(sub)

n.c. −−20 not connected

TDA8927J TDA8927ST TDA8927TH

5 5 2 positive power supply channel 1

8 8 5 negative power supply channel 1

10 10 8 negative power supply channel 2

13 13 11 positive power supply channel 2

−−19 negative supply (substrate)

PIN

DESCRIPTION

overcurrent report

sources

2001 Dec 11 6

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

handbook, halfpage

SW1

REL1

DIAG

EN1

V

DD1

BOOT1

OUT1

V

SS1

STAB

V

SS2

OUT2

BOOT2

V

DD2
EN2

POWERUP

REL2

SW2

1
2
3
4
5
6
7
8
9

TDA8927ST

10
11
12
13
14
15
16
17

TDA8927J

handbook, halfpage

EN1

DIAG
REL1

SW1

n.c.

V

SS(sub)

n.c.
LIM

SW2

REL2

POWERUP

EN2

TDA8927

24
23
22
21
20
19
18
17

16
15
14
13

TDA8927TH

MGW144

1
2
3
4
5
6
7
8

9
10
11
12

n.c.
V

DD1

BOOT1
OUT1
V

SS1

STAB
STAB
V

SS2

OUT2
BOOT2
V

DD2

n.c.

MGW142

Fig.3 Pin configuration of TDA8927J and

TDA8927ST.

2001 Dec 11 7

Fig.4 Pin configuration of TDA8927TH.

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

8 FUNCTIONAL DESCRIPTION

The combination of the TDA8927J and the TDA8929T
produces a two-channel audio power amplifier system
usingthe class-D technology (seeFig.5).In the TDA8929T
controllerdevice the analog audio input signal is converted
into a digital Pulse Width Modulation (PWM) signal.

ThepowerstageTDA8927isusedfordrivingthe low-pass
filter and the loudspeaker load. It performs a level shift
from the low-power digital PWM signal, at logic levels, to a
high-power PWM signal that switchs between the main
supply lines. A second-order low-pass filter converts the
PWM signal into an analog audio signal across the
loudspeaker.

See the specification of the TDA8929T for a description of
the controller.

8.1 Power stage

The power stage contains the high-power DMOS
switches,the drivers, timing and handshaking betweenthe
power switches and some control logic. For protection, a
temperature sensor and a maximum current detector are
built-in on the chip.

For interfacing with the controller chip the following
connections are used:

• Switch (pins SW1 and SW2): digital inputs; switching
from VSS to VSS+ 12 V and driving the power DMOS
switches

• Release (pins REL1 and REL2): digital outputs to
indicate switching from VSS to VSS+ 12 V, follows
pins SW1 and SW2 with a small delay

• Enable (pins EN1 and EN2): digital inputs; at a level of
VSSthe power DMOS switches are open and the PWM
output is floating; at a level of VSS+ 12 V the power
stage is operational and controlled by the switch pin if
pin POWERUP is at VSS+12V

• Power-up (pin POWERUP): must be connected to a
continuous supply voltage of at least VSS+ 5 V with
respect to V

• Diagnostics(pin DIAG):digitalopen-drain output; pulled
to VSS if temperature or maximum current is exceeded.

SS

TDA8927

8.2 Protections

Temperature and short-circuit protection sensors are
included in the TDA8927 power stage. These protections
are only operational in combination with the TDA8929T. In
the event that the maximum current or maximum
temperature is exceeded the diagnostic output is
activated.The controller has to take appropriate measures
by shutting down the system.

8.2.1 OVERTEMPERATURE
If the junction temperature (Tj) exceeds 150 °C, then

pin DIAG becomes LOW. The diagnostic pin is released if
the temperature is dropped to approximately 130 °C, so
there is a hysteresis of approximately 20 °C.

8.2.2 SHORT-CIRCUIT ACROSS THE LOUDSPEAKER

TERMINALS

When the loudspeaker terminals are short-circuited it will
be detected by the current protection. If the output current
exceeds the maximum output current of 7.5 A, then
pin DIAG becomes LOW. The controller should shut down
the system to prevent damage. Using the TDA8929T the
system is shut down within 1 µs, and after 220 ms, it will
attempt to restart the system again. During this time the
dissipation is very low, so the average dissipation during a
short-circuit is practically zero.

For the TDA8927TH the limit value can be externally
adjusted using a resistor. For the maximum value of 7.5 A
pin LIM should be connected to VSS. When a resistor R
is connected between pin LIM and VSS the maximum
output current can be set at a lower value, using:

I

O(max)

Example 1: with R

2.1 105×

=

--------------------------------­R

ext

28 kΩ+

=27kΩ the current is limited at

ext

3.8 A.
Example 2: with R

=0Ω the current is limited at 7.5 A.

ext

In the TDA8927J and the TDA8927ST pin LIM is internally
connected to VSS, so I

O(max)

= 7.5 A.

ext

2001 Dec 11 8

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2001 Dec 11 9

V

OUT1

BOOT2

OUT2

DDA

BOOT1

V

SSA

+25 V

−25 V

MGU388

V

SSA

V

V

i(1)

MODE

V

i(2)

R

OSC

IN1−

IN1+

SGND1

OSC

MODE

SGND2

IN2+

IN2−

V

SSAVDDA

4

5

2

SGND

7

6

SGND

11

8

9

V

SS2(sub)

V

SS1VDD1

3

1

TDA8929T

INPUT

STAGE

mute

OSCILLATOR

MODE

mute

INPUT

STAGE

12 10

V

SSAVDDA

PWM

MODULATOR

PWM

MODULATOR

V

DD2

R

fb

STABI

MANAGER

R

fb

18

V

20

23
24

21
19

22
15

16

13
14
17

SSD

PWM1

REL1
SW1

EN1

STAB

DIAGCUR

DIAGTMP

EN2

SW2
REL2

PWM2

REL1

SW1

EN1

STAB

DIAG

POWERUP

EN2

SW2

REL2

TDA8927J

2

CONTROL

1

AND

4

HANDSHAKE

9

TEMPERATURE SENSOR

3

CURRENT PROTECTION

15

14

CONTROL

17

AND

HANDSHAKE

16

AND

DRIVER

HIGH

DRIVER

LOW

DRIVER

HIGH

DRIVER

LOW

V

DDD

V

DD2VDD1

13 5

6

7

V

SS1

V

DD2

12

11

810

V

V

SS2

SS1

V

SSD

SGND

(0 V)

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

audio amplifier

TDA8927

Fig.5 Typical application schematic of the class-D system using TDA8929T and the TDA8927J.

handbook, full pagewidth

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

8.3 BTL operation

BTL operation can be achieved by driving the audio input
channels of the controller in the opposite phase and by
connecting the loudspeaker with a BTL output filter
between the two PWM output pins of the power stage
(see Fig.6).

handbook, full pagewidth

TDA8927J

4

EN1

SW1

REL1

STAB

DIAG

POWERUP

EN2

SW2

REL2

1
2
9

3

15

14
17
16

CONTROL

AND

HANDSHAKE

temp

TEMPERATURE SENSOR

current

CURRENT PROTECTION

CONTROL

AND

HANDSHAKE

AND

TDA8927

In this way the system operates as a mono BTL amplifier
and with the same loudspeaker impedance a four times
higher output power can be obtained.

For more information see Chapter 15.

V

DD2VDD1

13 5

6

BOOT1

DRIVER

HIGH

DRIVER

LOW

DRIVER

HIGH

DRIVER

LOW

V
V

SS1

DD2

OUT1

7

SGND

(0 V)

12

BOOT2

OUT2

11

Fig.6 Mono BTL application.

2001 Dec 11 10

810

V

SS1VSS2

MGU386

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

TDA8927

audio amplifier

9 LIMITING VALUES

In accordance with the Absolute Maximum Rate System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

V

P(sc)

I

ORM

T

stg

T

amb

T

vj

V

es(HBM)

V

es(MM)

supply voltage −±30 V
supply voltage for

−±30 V

short-circuits across the load
repetitive peak current in

− 7.5 A

output pins
storage temperature −55 +150 °C
ambient temperature −40 +85 °C
virtual junction temperature − 150 °C
electrostatic discharge

voltage (HBM)

note 1

all pins with respect to V
all pins with respect to V

(class A) −500 +500 V

DD

(class A1) −1500 +1500 V

SS

all pins with respect to each other

−1500 +1500 V

(class A1)

electrostatic discharge
voltage (MM)

note 2

all pins with respect to V
all pins with respect to V

(class B) −250 +250 V

DD

(class B) −250 +250 V

SS

all pins with respect to each other

−250 +250 V

(class B)

Notes

1. Human Body Model (HBM); R

= 1500 Ω; C = 100 pF.

s

2. Machine Model (MM); Rs=10Ω; C = 200 pF; L = 0.75 µH.

10 THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air

TDA8927J 40 K/W
TDA8927ST 40 K/W
TDA8927TH 40 K/W

R

th(j-c)

thermal resistance from junction to case in free air

TDA8927J ≈1.0 K/W
TDA8927ST ≈1.0 K/W
TDA8927TH 1 K/W

11 QUALITY SPECIFICATION

In accordance with

“SNW-FQ611-part D”

if this type is used as an audio amplifier.

2001 Dec 11 11

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

TDA8927

audio amplifier

12 DC CHARACTERISTICS

VP= ±25 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

I

q(tot)

Internal stabilizer logic supply (pin STAB or pins STAB1 and STAB2)

V

O(STAB)

Switch inputs (pins SW1 and SW2)

V

IH

V

IL

Control outputs (pins REL1 and REL2)

V

OH

V

OL

Diagnostic output (pin DIAG, open-drain)

V

OL

I

LO

Enable inputs (pins EN1 and EN2)

V

IH

V

IL

V

EN(hys)

I

I(EN)

Switching-on input (pin POWERUP)

V

POWERUP

I

I(POWERUP)

Temperature protection

T

diag

T

hys

=25°C; measured in test diagram of Fig.8; unless otherwise specified.

amb

supply voltage note 1 ±15 ±25 ±30 V
total quiescent current no load connected − 35 45 mA

outputs floating − 510mA

stabilizer output voltage 11 13 15 V

HIGH-level input voltage referenced to V
LOW-level input voltage referenced to V

HIGH-level output voltage referenced to V
LOW-level output voltage referenced to V

LOW-level output voltage I

= 1 mA; note 2 0 − 1.0 V

DIAG

SS
SS

SS
SS

10 − V

STAB

0 − 2V

10 − V

STAB

0 − 2V

leakage output current no error condition −−50 µA

HIGH-level input voltage referenced to V
LOW-level input voltage referenced to V

SS
SS

− 9V

STAB

05−V
hysteresis voltage − 4 − V
input current −−300 µA

operating voltage referenced to V
input current V

temperature activating diagnostic V
hysteresis on temperature

POWERUP

DIAG=VDIAG(LOW)

V

DIAG=VDIAG(LOW)

=12V − 100 170 µA

SS

5 − 12 V

150 −−°C

− 20 −°C

diagnostic

V

V

V

Notes

1. The circuit is DC adjusted at V

= ±15 to ±30 V.

P

2. Temperature sensor or maximum current sensor activated.

2001 Dec 11 12

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

TDA8927

audio amplifier

13 AC CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Single-ended application; note 1

P

o

output power RL=4Ω; THD = 0.5%; VP= ±25 V 50

THD total harmonic distortion P

G

v(cl)

closed-loop voltage gain 29 30 31 dB

η efficiency P
Mono BTL application; note 5
P

o

output power RL=8Ω; THD = 0.5%; VP= ±25 V 100

THD total harmonic distortion P

G

v(cl)

closed loop voltage gain 35 36 37 dB

η efficiency P

R

=4Ω; THD = 10%; VP= ±25 V 60

L

R

=4Ω; THD = 0.5%; VP= ±27 V 60

L

=4Ω; THD = 10%; VP= ±27 V 74

R

L

= 1 W; note 3

o

f

= 1 kHz − 0.01 0.05 %

i

f

= 10 kHz − 0.1 − %

i

= 30 W; fi= 1 kHz; note 4 − 94 − %

o

R

=8Ω; THD = 10%; VP= ±25 V 128

L

=4Ω; THD = 0.5%; VP= ±17 V 80

R

L

R

=4Ω; THD = 10%; VP= ±17 V 100

L

= 1 W; note 3

o

f

= 1 kHz − 0.01 0.05 %

i

f

= 10 kHz − 0.1 − %

i

= 30 W; fi= 1 kHz; note 4 − 94 − %

o

(2)

55 − W

(2)

65 − W

(2)

65 − W

(2)

80 − W

(2)

112 − W

(2)

140 − W

(2)

87 − W

(2)

110 − W

Notes

1. VP= ±25 V; RL=4Ω; fi= 1 kHz; T

=25°C; measured in reference design in Figs 9 and 11; unless otherwise

amb

specified.

2. Indirectly measured; based on R

measurement.

ds(on)

3. Total Harmonic Distortion (THD) is measured in a bandwidth of 22 Hz to 22 kHz. When distortion is measured using
a low-order low-pass filter a significantly higher value will be found, due to the switching frequency outside the audio
band.

4. Efficiency for power stage; output power measured across the loudspeaker load.

5. VP= ±25 V; RL=8Ω; fi= 1 kHz; T

=25°C; measured in reference design in Figs 9 and 11; unless otherwise

amb

specified.

2001 Dec 11 13

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

TDA8927

audio amplifier

14 SWITCHING CHARACTERISTICS

VP= ±25 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

PWM outputs (pins OUT1 and OUT2); see Fig.7

t

r

t

f

t

blank

t

PD

t

W(min)

R

ds(on)

Note

1. When used in combination with the TDA8929T controller, the effective minimum pulse width during clipping is

0.5t

W(min)

14.1 Duty factor

=25°C; measured in Fig.8; unless otherwise specified.

amb

rise time − 30 − ns
fall time − 30 − ns
blanking time − 70 − ns
propagation delay from pin SW to pin PWM − 20 − ns
minimum pulse width note 1 − 220 270 ns
on-resistance of the output

− 0.2 0.3 Ω

transistors

.

For the practical useable minimum and maximum duty factor (δ) which determines the maximum output power:

t

×

W(min)fosc

------------------------------­2

× 100% < δ < × 100%



1

–



×

t

W(min)fosc

------------------------------­2

Using the typical values: 3.5% < δ < 96.5%.

2001 Dec 11 14

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

handbook, full pagewidth

V

DD

PWM

output

(V)

0 V

V

SS

t

r

t

PD

V

STAB

V

SW

(V)

V

SS

TDA8927

1/f

osc

t

f

t

blank

V

V

REL
(V)

STAB

V

SS

100 ns

Fig.7 Timing diagram PWM output, switch and release signals.

MGW145

2001 Dec 11 15

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2001 Dec 11 16

12 V

12 kΩ

POWERUP

EN1

SW1

REL1

STAB

DIAG

ndbook, full pagewidth

TDA8927J

4

CONTROL

1
2
9

3

15

AND

HANDSHAKE

temp

TEMPERATURE SENSOR

current

CURRENT PROTECTION

AND

DRIVER

HIGH

DRIVER

LOW

V

DD2VDD1

13 5

V

SS1

V

DD2

BOOT1

6

15 nF

OUT1

7

V

V

OUT1

BOOT2

12

2V

DD

15 TEST AND APPLICATION INFORMATION

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

audio amplifier

EN2

14

100

nF

V

V

V

EN

V

12 V

SW1

0

V

V

REL1

STAB

V

V

DIAG

V

12 V

SW2

0

SW2

REL2

V

V

REL2

17
16

CONTROL

AND

HANDSHAKE

DRIVER

HIGH

DRIVER

LOW

810
V

SS1

V

11

SS2

OUT2

V

OUT2

15 nF

V

MGW184

TDA8927

Fig.8 Test diagram.

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

TDA8927

audio amplifier

15.1 BTL application

When using the system in a mono BTL application (for more output power), the inputs of both channels of the PWM
modulator must be connected in parallel; the phase of one of the inputs must be inverted. In principle the loudspeaker
can be connected between the outputs of the two single-ended demodulation filters.

15.2 Remarks

The case of the package of the TDA8927J/ST and the heatsink of the TDA8927TH are internally connected to VSS.

15.3 Output power

The output power in single-ended applications can be estimated using the formulae:

R

-----------------------------------------------­RLR

=

P

o(1%)

--------------------------------------------------------------------------------------------------------------------------

The maximum current should not exceed 7.5 A.

L

++()

ds(on)Rs

2R

I

O(max)

=

1t

V

P

×

L

VP1t

---------------------------------------------------------------­R

++

L

×–()××

W(min)fosc

W(min)fosc

R

ds(on)Rs

The output power in BTL applications can be estimated using the formulae:

2

×–()×[]

R

----------------------------------------------------------

P

o(1%)

RL2R

=

----------------------------------------------------------------------------------------------------------------------------------------

The maximum current should not exceed 7.5 A.

L

+()×+

ds(on)Rs

I

O(max)

2V

2R

×

2VP1t

=

-------------------------------------------------------------------- -

R

1t

P

L

L

W(min)fosc

W(min)fosc

2R

ds(on)Rs

×–()×[]

+()×+

2

×–()××

Where:

RL= load impedance
Rs= series resistance of filter coil
P

= output power just at clipping

o(1%)

The output power at THD = 10%: P

o(10%)

= 1.25 × P

o(1%)

.

15.4 Reference designs

The reference design for a two-chip class-D audio amplifier for TDA8926J or TDA8927J and TDA8929T is shown in
Fig.9. The Printed-Circuit Board (PCB) layout is shown in Fig.10. The bill of materials is given in Table 1.

The reference design for a two-chip class-D audio amplifier for TDA8926TH or TDA8927TH and TDA8929T is shown in
Fig.11. The PCB layout is shown in Fig.12.

2001 Dec 11 17

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2001 Dec 11 18

V

mode select

DDA

R19

R20

39 kΩ

39 kΩ

on

mute

D1

(5.6 V)

GND

C24

C25

470 nF

470 nF

R5
10 kΩ

C28

1 nF

QGND QGND

S1

off

V

SSA

GND

J5
J6

C26

470 nF

R4
10 kΩ

J3J1

J2

V

inputs

SS

27 kΩ

220 nF

330 pF

330 pF

470 nF

R6
10 kΩ

1 nF

R1

C3

C29

J4

C44
220 nF

C22

C23

C27

input 2input 1

V

DDA

MODE

OSC

SGND1

SGND2

IN1

IN1
IN2

IN2

R7
10 kΩ

V

DD1

3

6

7

2

11

+

5

−

4

+

8

−

9

GND

C1
C2

V

DD2

10 12

U2

TDA8929T

CONTROLLER

15

n.c.

+

25 V

−

25 V

220 nF
220 nF

V

DD
1
2
3

V

SS

C30
1 nF

C31
1 nF

V

SS2

QGND

QGND

V

1
17

13
14
16

19

18

22

21
23
24
20

V

SSA

SS1

PWM2
SW2
REL2
EN2

STAB

V

SSD

DIAGCUR

EN1
REL1
SW1
PWM1

bead

R21
10 kΩ

R22

9.1 kΩ

bead

C4
220 nF

C43
180 pF

L5

L6

V

V

DDD

SSD

C6
220 nF

DDDVSSD

V

DDA

GND

V

SSA

C11
560 pF

R12

5.6 Ω
L2

Sumida 33 µH

CDRH127-330

470 nF

V

DDD

V

SSD

470 nF

Sumida 33 µH

CDRH127-330

L4

R14

5.6 Ω

C13
560 pF

MLD633

C14

C16

R15
24 Ω

C15
220 nF

C17
220 nF

R16
24 Ω

C18

1 nF

C19

1 nF

C20

1 nF

C21

1 nF

QGND

QGND

GND

QGND

QGND

OUT2

OUT2

OUT2

OUT1

OUT1

OUT1

C10

560 pF

R11

SW2

17

REL2

16

EN2

14

TDA8926J

15

TDA8927J

9

3

POWER STAGE

4
2
1

C36
220 nF

C38
220 nF

U1

or

C37
220 nF

C39
220 nF

V

DDD

R24

200 kΩ

POWERUP

D2

(7.5 V)

C5

L7

bead

220 nF

C34
1500 µF
(35 V)

C35
1500 µF
(35 V)

STAB

DIAG

EN1

REL1

SW1

V

DDD

V

SSD

V

V

SSD

SSA

R10
1 kΩ

C32
220 nF

C33
220 nF

5.6 Ω

11

OUT2

C8

BOOT2

V

DD1

V

DD2

V

SS2

V

SS1

BOOT1

OUT1

220 nF

5.6 Ω
C12

560 pF

C40
47 µF
(35 V)

C41
47 µF
(35 V)

C7

C9
15 nF

R13

15 nF

V

12

5

13

10

8

6

7

power supply

−

1

2

+

−

2

1

+

−

2

1

+

outputs

4 or 8 Ω

SE

8 Ω
BTL

4 or 8 Ω

SE

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

audio amplifier

R21 and R22 are only necessary in BTL applications with asymmetrical supply.
BTL: remove R6, R7, C23, C26 and C27 and close J5 and J6.

handbook, full pagewidth

C22 and C23 influence the low-pass frequency response and should be tuned with the real load (loudspeaker).
Inputs floating or inputs referenced to QGND (close J1 and J4) or referenced to VSS (close J2 and J3) for an input signal ground reference.

Fig.9 Two-chip class-D audio amplifier application diagram for TDA8926J or TDA8927J and TDA8929T.

TDA8927

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2001 Dec 11 19

ndbook, full pagewidth

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

audio amplifier

C16

C14

Out1 Out2

R16
C17

C15
R15

Out1 Out2

C21

C20

TDA8926J/27J & TDA8929T

U1

C34
C35

D2

V

DDVSS

L6

L5

GND

Silk screen top, top view

L4

C6

C43

C9

R10

R21

C7

GND

C8

R24

R22

V

C31

C13

C11

SS

In1

R14

R12

C28

J2

J1

C19

C32

C33

C12
R13

C5

R11
C10

L2

V

DD

C30C18

L7

Version 21 03-2001

In1

R19

R20

U2

C4

C3

R1

In2

R5

R4 R6

C29
J3

J4

QGND

D1

C40

C41

state of D art

In2

C1

C38

C36
C22

C23
C37

C39

C2

R7

C24
C25
C26
C27

ON
MUTE

S1

OFF

Copper top, top view

C44

J5
J6

TDA8927

Silk screen bottom, top view

Fig.10 Printed-circuit board layout for TDA8926J or TDA8927J and TDA8929T.

Copper bottom, top view

MLD634

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2001 Dec 11 20

V

mode select

DDA

R1

R2

30 kΩ

39 kΩ

on

D1

mute

(5.6 V)

C5

1 µF

QGND QGND

GND

R4
10 kΩ

C9

1 nF

1 µF

off

V

SSA

C6

R5
10 kΩ

J2

V

SS

J5
J6

1 µF

J3J1

C1

S1

220 nF

R3

27 kΩ

C2

220 nF

GND

C3

330 pF

C4

330 pF

C8

C7

1 µF

R6
10 kΩ

C10

1 nF

J4

inputs

input 2input 1

V

DDA

MODE

OSC

SGND1

SGND2

IN1

IN1
IN2

IN2

R7
10 kΩ

V

DD1

6

7

2

11

+

5

−

4

+

8

−

9

C11

C12

V

DD2

3

10 12

TDA8929T

CONTROLLER

+

GND

−

U2

15

n.c.

25 V

25 V

100 nF
100 nF

V

V

V

SS2

V

V

DDD

V

SSA

V

SS1

1

PWM2

17

SW2

13

REL2

14

EN2

16

C13
100 nF

C15
180 pF

bead

R9
10 kΩ

R10

9.1 kΩ

bead

200 kΩ

(7.5 V)

V

V

SSA

L5

L6

STAB

19

V

SSD

18

DIAGCUR

22

EN1

21

REL1

23

SW1

24

PWM1

20

QGND

C16
1 nF

DD
1
2
3

QGND

SS

C17
1 nF

QGND

SSD

R18

D2

R8

1 kΩ

V

V

bead

SSD

SSD

L7

V

V

DDD

SSD

V

DDD

POWERUP

C14

100 nF

V

SS(sub)

R11

5.6 Ω

SW2

REL2

EN2

STAB
STAB

DIAG

EN1

REL1

SW1

LIM

19

16
15
13

U1

TDA8926TH

14

or

TDA8927TH

6
7

23

POWER STAGE

24
22
21

17

1, 12, 18, 20

n.c.

C18

C19

100 nF

100 nF

C20

C21

100 nF

100 nF

power supply

560 pF

5.6 Ω

9

OUT2

10

BOOT2
V

DD1

2

V

DD2

11

100 nF

V

SS2

8

V

SS1

5

BOOT1

3

OUT1

4

5.6 Ω

560 pF

C22
47 µF
(35 V)

C23
47 µF
(35 V)

C24

C27

C34

V

V

R12

C33
15 nF

R14

DDA

GND

SSA

C26
15 nF

V

SSD

DDDVSSD

MGW232

C28
100

R13

5.6 Ω

nF

R15

5.6 Ω

C25
560 pF

C35
560 pF

C29
100 nF

C30
100 nF

bead

bead

L1

L3

L2

Sumida 33 µH

CDRH127-330

470 nF

V

DDD
C31
1500 µF
(35 V)

C32
1500 µF
(35 V)

V

SSD

470 nF

Sumida 33 µH

CDRH127-330

L4

C36

C37

R16

5.6 Ω

C38
220 nF

C39
220 nF

R17

5.6 Ω

C40
1 nF

C41
1 nF

C42
1 nF

C43
1 nF

QGND

QGND

GND

QGND

QGND

OUT2

OUT2

OUT2

OUT1

OUT1

OUT1

−

1

2

+

−

2

1

+

−

2

1

+

outputs

4 or 8 Ω

SE

8 Ω
BTL

4 or 8 Ω

SE

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

audio amplifier

R9 and R10 are only necessary in BTL applications with asymmetrical supply.
BTL: remove R6, R7, C4, C7 and C8 and close J5 and J6.
Demodulation coils L2 and L4 should be matched in BTL.
Inputs floating or inputs referenced to QGND (close J1 and J4) or referenced to VSS (close J2 and J3).

handbook, full pagewidth

Fig.11 Two-chip class-D audio amplifier application diagram for TDA8926TH or TDA8927TH and TDA8929T.

TDA8927

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2001 Dec 11 21

book, full pagewidth

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

audio amplifier

C37

C36

C31

C32

Out1 Out2

L4

L5

R17 R16 R10R9C39

C38

C43

C42 C41 C40 C16 C17

L3

L1

L6

L5

GND

V

DD

V

SS

Silk screen top, top view

Jan 2001

C34

R14

R12

C24

C33

C26

U1 U2
C28
C27

C13

L7

C10

J2

J4

QGND

C29

C30

R15

R13

C35

C14

C25

Silk screen bottom, top view

TDA8926TH/27TH
TDA8929T

State of D art

Version 2CTH1

In1In2

C15

C11

C1

R8

C2

R11

C9

R7
R6

J3

C20

R3

C8
C7

R4
R5

J1

C22

C23

R1 R2

C3
C4

C12
C21

C5
C6

D1

S1

ON
MU
OFF

Copper top, top view

C18

C19

J6

J5

Copper bottom, top view

MGW147

Fig.12 Printed-circuit board layout for TDA8926TH or TDA8927TH and TDA8929T.

TDA8927

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

TDA8927

audio amplifier

15.5 Reference design bill of materials Table 1 Two-chip class-D audio amplifier PCB (Version 2.1; 03-2001) for TDA8926J or TDA8927J and TDA8929T

(see Figs 9 and 10)

COMPONENT DESCRIPTION VALUE COMMENTS

In1 and In2 Cinch input connectors 2 × Farnell: 152-396
Out1,Out2, VDD,

GND and V
S1 on/mute/off switch PCB switch Knitter ATE 1 E M-O-M
U1 power stage IC TDA8926J/27J DBS17P package
U2 controller IC TDA8929T SO24 package
L2 and L4 demodulation filter coils 33 µH2×Sumida CDRH127-330
L5, L6 and L7 power supply ferrite beads 3 × Murata BL01RN1-A62
C1 and C2 supply decoupling capacitors for

C3 clock decoupling capacitor 220 nF/63 V SMD1206
C4 12 V decoupling capacitor of the

C5 12 V decoupling capacitor of the power

C6 and C7 supply decoupling capacitors for

C8 and C9 bootstrap capacitors 15 nF/50 V 2 × SMD0805
C10, C11,

C12 and C13
C14 and C16 demodulation filter capacitors 470 nF/63 V 2 × MKT
C15 and C17 resonance suppress capacitors 220 nF/63 V 2 × SMD1206
C18, C19,

C20 and C21
C22 and C23 input filter capacitors 330 pF/50 V 2 × SMD1206
C24, C25,

C26 and C27
C28, C29,

C30 and C31
C32 and C33 power supply decoupling capacitors 220 nF/63 V 2 × SMD1206
C34 and C35 power supply electrolytic capacitors 1500 µF/35 V 2 × Rubycon ZL very low ESR (large

C36, C37,
C38 and C39

C40 and C41 analog supply electrolytic capacitors 47 µF/35 V 2 × Rubycon ZA low ESR
C43 diagnostic capacitor 180 pF/50 V SMD1206
C44 mode capacitor 220 nF/63 V SMD1206
D1 5.6 V zener diode BZX79C5V6 DO-35
D2 7.5 V zener diode BZX79C7V5 DO-35
R1 clock adjustment resistor 27 kΩ SMD1206

supply/output connectors 2 × Augat 5KEV-02;

SS

220 nF/63 V 2 × SMD1206

V

to VSS of the controller

DD

220 nF/63 V SMD1206

controller

220 nF/63 V SMD1206

stage

220 nF/63 V SMD1206

V

to VSS of the power stage

DD

snubber capacitors 560 pF/100 V 4 × SMD0805

common mode HF coupling capacitors 1 nF/50 V 4 × SMD0805

input capacitors 470 nF/63 V 4 × MKT

common mode HF coupling capacitors 1 nF/50 V 2 × SMD0805

analog supply decoupling capacitors 220 nF/63 V 4 × SMD1206

1 × Augat 5KEV-03

switching currents)

2001 Dec 11 22

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

COMPONENT DESCRIPTION VALUE COMMENTS

R4, R5,
R6 and R7

R10 diagnostic resistor 1 kΩ SMD1206
R11, R12,

R13 and R14
R15 and R16 resonance suppression resistors 24 Ω 2 × SMD1206
R19 mode select resistor 39 kΩ SMD1206
R20 mute select resistor 39 kΩ SMD1206
R21 resistor needed when using an

R22 resistor needed when using an

R24 bias resistor for powering-up the power

15.6 Curves measured in reference design

input resistors 10 kΩ 4 × SMD1206

snubber resistors 5.6 Ω; >0.25 W 4 × SMD1206

10 kΩ SMD1206

asymmetrical supply

9.1 kΩ SMD1206

asymmetrical supply

200 kΩ SMD1206

stage

TDA8927

2

10

handbook, halfpage

THD+N

(%)

10

1

−1

10

−2

10

−3

10

−2

10

2 × 8 Ω SE; VP= ±25 V:
(1) 10 kHz.
(2) 1 kHz.
(3) 100 Hz.

−1

10

1

(1)

(2)

(3)

10 10

Fig.13 THD + N as a function of output power.

MLD627

2

Po (W)

2

10

handbook, halfpage

THD+N

(%)

10

1

−1

10

−2

10

−3

3

10

10

10 10

2 × 8 Ω SE; VP= ±25 V:
(1) Po=10W.
(2) Po=1W.

2

(1)

(2)

3

10

MLD628

4

10

fi (Hz)

5

10

Fig.14 THD + N as a function of input frequency.

2001 Dec 11 23

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

2

10

handbook, halfpage

THD+N

(%)

10

1

(1)

−1

10

−2

10

−3

10

−2

10

−1

10

2 × 4 Ω SE; VP= ±25 V:
(1) 10 kHz.
(2) 1 kHz.
(3) 100 Hz.

1

(2)

(3)

10 10

2

Po (W)

MLD629

TDA8927

2

10

handbook, halfpage

THD+N

(%)

10

1

−1

10

−2

10

−3

3

10

10

10 10

2

(1)

(2)

3

10

2 × 4 Ω SE; VP= ±25 V:
(1) Po=10W.
(2) Po=1W.

MLD630

4

10

fi (Hz)

5

10

Fig.15 THD + N as a function of output power.

Fig.16 THD + N as a function of output power.

2

10

handbook, halfpage

THD+N

(%)

10

1

−1

10

−2

10

−3

10

−2

10

−1

10

1

(1)

(2)

(3)

10 10

1 × 8 Ω BTL; VP= ±25 V:
(1) 10 kHz.
(2) 1 kHz.
(3) 100 Hz.

MLD631

2

Po (W)

Fig.16 THD + N as a function of input frequency.

2

10

handbook, halfpage

THD+N

(%)

10

1

−1

10

−2

10

−3

3

10

10

10 10

2

(1)

(2)

3

10

1 × 8 Ω BTL; VP= ±25 V:
(1) Po=10W.
(2) Po=1W.

MLD632

4

10

fi (Hz)

5

10

Fig.17 THD + N as a function of output power.

2001 Dec 11 24

Fig.18 THD + N as a function of input frequency.

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

25

handbook, halfpage

P

(W)

20

15

10

5

0

−2

10

VP= ±25 V; fi= 1 kHz:
(1) 2 × 4 Ω SE.
(2) 1 × 8 Ω BTL.
(3) 2 × 8 Ω SE.

−1

10

1

(1)

10 10

Fig.19 Power dissipation as a function of output

power.

MLD609

(2)

(3)

2

Po (W)

TDA8927

100

handbook, halfpage

η

(%)

80

60

40

20

3

10

0

0

VP= ±25 V; fi= 1 kHz:
(1) 2 × 4 Ω SE.
(2) 1 × 8 Ω BTL.
(3) 2 × 8 Ω SE.

(3)

30

(1)

(2)

60 90 120

Fig.20 Efficiency as a function of output power.

MLD610

Po (W)

150

200

handbook, halfpage

P

o

(W)

160

(2)

120

80

40

0

10

THD+N=0.5%; fi= 1 kHz:
(1) 1 × 4 Ω BTL.
(2) 1 × 8 Ω BTL.
(3) 2 × 4 Ω SE.
(4) 2 × 8 Ω SE.

(1)

(3)

(4)

15

20 25 30

Fig.21 Output power as a function of supply

voltage.

MLD611

VP (V)

200

handbook, halfpage

P

o

(W)

160

120

80

40

35

0

10

THD + N = 10%; fi= 1 kHz:
(1) 1 × 4 Ω BTL.
(2) 1 × 8 Ω BTL.
(3) 2 × 4 Ω SE.
(4) 2 × 8 Ω SE.

(1)

15

20 25 30

MLD612

(2)

(3)

(4)

35

VP (V)

Fig.22 Output power as a function of supply

voltage.

2001 Dec 11 25

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

handbook, halfpage

0

α

cs

(dB)

−20

−40

−60

−80

−100

10

10

2 × 8 Ω SE; VP= ±25 V:
(1) Po=10W.
(2) Po=1W.

(1)

(2)

2

3

10

4

10

fi (Hz)

MLD613

TDA8927

handbook, halfpage

0

α

cs

(dB)

−20

−40

−60

(1)

−80

5

10

−100

2

10

10

(2)

3

10

2 × 4 Ω SE; VP= ±25 V:
(1) Po=10W.
(2) Po=1W.

MLD614

4

10

fi (Hz)

5

10

Fig.23 Channel separation as a function of input

frequency.

45

handbook, halfpage

G

(dB)

40

35

30

25

20

10

VP= ±25 V; Vi= 100 mV;

=10kΩ/Ci= 330 pF:

R

s

(1) 1 × 8 Ω BTL.
(2) 2 × 8 Ω SE.
(3) 2 × 4 Ω SE.

2

10

3

10

MLD615

(1)

(2)

(3)

4

10

fi (Hz)

Fig.24 Channel separation as a function of input

frequency.

45

handbook, halfpage

G

(dB)

40

35

30

25

5

10

20

10

2

10

3

10

VP= ±25 V; Vi= 100 mV;

=0Ω:

R

s

(1) 1 × 8 Ω BTL.
(2) 2 × 8 Ω SE.
(3) 2 × 4 Ω SE.

MLD616

(1)

(2)

(3)

4

10

fi (Hz)

5

10

Fig.25 Gain as a function of input frequency.

2001 Dec 11 26

Fig.26 Gain as a function of input frequency.

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

handbook, halfpage

0

SVRR

(dB)

−20

−40

(1)

−60

−80

−100

10

VP= ±25 V; V
(1) Both supply lines in anti-phase.
(2) Both supply lines in phase.
(3) One supply line rippled.

(2)
(3)

2

10

= 2 V (p-p) with respect to GND:

ripple

10

3

4

10

fi (Hz)

MLD617

TDA8927

V

MLD618

ripple

(V)

0

handbook, halfpage

SVRR

(dB)

−20

−40

−60

−80

5

10

−100
05

VP= ±25 V; V
(1) f

ripple

(2) f

ripple

(3) f

ripple

1

with respect to GND:

ripple

= 1 kHz.
= 100 Hz.
=10Hz.

(1)

(2)
(3)

234

Fig.27 SVRR as a function of input frequency.

100

handbook, halfpage

I

q

(mA)

80

60

40

20

0

0102030

RL= open.

MLD619

37.5

V

(V)

P

Fig.28 SVRR as a function of V

380

handbook, halfpage

f

clk

(kHz)

372

364

356

348

340

0102030

RL= open.

(p-p).

ripple

MLD620

V

(V)

P

40

Fig.29 Quiescent current as a function of supply

voltage.

2001 Dec 11 27

Fig.30 Clock frequency as a function of supply

voltage.

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

handbook, halfpage

5

V

ripple

(V)

4

3

2

1

0

−2

10

VP= ±25 V; 1500µF per supply line; fi=10Hz:
(1) 1 × 4 Ω SE.
(2) 1 × 8 Ω SE.

−1

10

11010

Fig.31 Supply voltage ripple asa function of output

power.

MLD621

(1)

(2)

Po (W)

2

handbook, halfpage

5

SVRR

(%)

4

3

(1)

2

1

(2)

0

10 10

VP= ±25 V; 1500µF per supply line:
(1) Po= 30 W into 1 × 4 Ω SE.
(2) Po= 15 W into 1 × 8 Ω SE.

2

10

10

3

fi (Hz)

Fig.32 SVRR as a function of input frequency.

TDA8927

MLD622

4

(1)

(2)

(3)

f

clk

MLD623

(kHz)

10

handbook, halfpage

THD+N

(%)

1

−1

10

−2

10

−3

10

VP= ±25 V; Po= 1 W in 2 × 8 Ω:
(1) 10 kHz.
(2) 1 kHz.
(3) 100 Hz.

200 300 400 500

Fig.33 THD + N as a function of clock frequency.

f

clk

MLD624

(kHz)

50

handbook, halfpage

P

o

(W)

40

30

20

10

600100

0

100 600

VP= ±25 V; RL=2×8Ω; fi= 1 kHz; THD+N=10%.

200

300 400 500

Fig.34 Output power as a function of clock

frequency.

2001 Dec 11 28

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

150

handbook, halfpage

I

q

(mA)

120

90

60

30

0

100 600

200

300 400 500

f

clk

MLD625

(kHz)

1000

handbook, halfpage

V

r(PWM)

(mV)

800

600

400

200

0

100 600

200

300 400 500

TDA8927

MLD626

f

(kHz)

clk

VP= ±25 V; RL= open.

Fig.35 Quiescent current as a function of clock

frequency.

VP= ±25 V; RL=2×8Ω.

Fig.36 PWM residual voltage as a function of clock

frequency.

2001 Dec 11 29

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

16 PACKAGE OUTLINES

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

non-concave

D

d

x

E

h

view B: mounting base side

TDA8927

SOT243-1

D

h

A

2

117

e

Z

DIMENSIONS (mm are the original dimensions)

UNIT A e

mm

A2bpcD

17.0

4.6

4.4

0.75

0.60

15.5

0.48

0.38

1

e

(1)

deD

24.0

20.0

23.6

19.6

w M

b

p

(1)

E

h

12.2

10 2.54

11.8

0 5 10 mm

B

j

L

3

1.27

scale

1

e

5.08

L

E

2

h

6

Q

LL3m

3.4

12.4

3.1

11.0

2.4

1.6

e

4.3

m

E

A

c

2

2.1

1.8

v M

(1)

v

Qj

0.8

0.4w0.03

Z

x

2.00

1.45

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE

VERSION

SOT243-1

IEC JEDEC EIAJ

REFERENCES

2001 Dec 11 30

EUROPEAN

PROJECTION

ISSUE DATE

97-12-16
99-12-17

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm)

non-concave

D

d

x

E

h

view B: mounting base side

D

h

A

2

TDA8927

SOT577-1

j

117

e

e

0.48

0.38

1

(1)

D

de LL

24.0

20.0

23.6

19.6

Z

DIMENSIONS (mm are the original dimensions)

UNIT A e1e

mm

A2bpcE

4.6

4.4

0.75

0.60

13.5

w M

b

p

0 5 10 mm

(1)

D

h

12.2

10 2.54

11.8

scale

1.27 2.54

B

E

A

QL

c

e

2

M

v

L

1

(1)

E

2

h

3.4

3.1

4.7

4.1

6

Qj

1

4.7

2.1

1.8

0.6

4.1

w

v

0.4

x

0.03

Z

2.00

1.45

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE
VERSION

SOT577-1

IEC JEDEC EIAJ

REFERENCES

2001 Dec 11 31

EUROPEAN

PROJECTION

ISSUE DATE

00-01-19
00-03-15

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height

D

c

y

D

1

1

pin 1 index

12

D

2

x

E

E

2

H

E

TDA8927

SOT566-2

A

X

v M

A

E

1

24

Z

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

Notes

1. Limits per individual lead.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A

2

max.

3.5

3.5 0.35

3.2

e

(1)

bpc

A

A

4

3

+0.12

0.53

−0.02

0.40

0.32

0.23

D

16.0

15.8

13

w M

b

p

0 5 10 mm

scale

(2)

D

1

13.0

12.6

D

1.1

0.9

(2)

E

E

2

11.1

10.9

1

6.2

5.8

E

2.9

2.5

Q

A

2

A

4

detail X

H

L

Q

1.7

1.5

v

0.25w0.25

e

E

14.5

13.9

p

1.1

0.8

2

1.0

L

x

0.03

(A3)

p

0.07

A

θ

yZ

2.7

2.2

θ

8°
0°

OUTLINE

VERSION

SOT566-2

IEC JEDEC EIAJ

REFERENCES

2001 Dec 11 32

EUROPEAN

PROJECTION

ISSUE DATE

00-03-24

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D
audio amplifier

17 SOLDERING

17.1 Introduction

Thistext gives a very brief insight to acomplextechnology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-holeand surface mountcomponentsare mixed on
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended.

17.2 Through-hole mount packages

17.2.1 SOLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

17.2.2 MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

17.3 Surface mount packages

17.3.1 REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
totheprinted-circuitboard by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

stg(max)

). If the

TDA8927

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.

17.3.2 WAVE SOLDERING
Conventional single wave soldering is not recommended

forsurface mount devices (SMDs) or printed-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackages with leads on four sides,thefootprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

17.3.3 MANUAL SOLDERING

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C. When using a dedicated tool, all other leads can
be soldered in one operation within 2 to 5 seconds
between 270 and 320 °C.

2001 Dec 11 33

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

TDA8927

audio amplifier

17.4 Suitability of IC packages for wave, reflow and dipping soldering methods

MOUNTING PACKAGE

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable
Surface mount BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable −

HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, HVQFN, SMS

(4)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

, SO, SOJ suitable suitable −

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

not suitable

SOLDERING METHOD

WAVE REFLOW

(2)

(3)

− suitable

suitable −

(4)(5)

suitable −

(6)

suitable −

(1)

DIPPING

.

2001 Dec 11 34

Philips Semiconductors Objective specification

Power stage 2 × 80 W class-D

TDA8927

audio amplifier

18 DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

STATUS

(2)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

19 DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation or warranty thatsuchapplications will be
suitable for the specified use without further testing or
modification.

20 DISCLAIMERS Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers using or sellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of any of these products,conveysno licence or title
under any patent, copyright, or mask work right to these
products,and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2001 Dec 11 35

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 753503/01/pp36 Date of release: 2001 Dec 11 Document order number: 9397 750 08191

SCA73