Datasheet TDA8581 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8581

Multi-purpose high-gain power
amplifier

Preliminary specification
File under Integrated Circuits, IC01

1998 May 27

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

FEATURES
General

• High gain

• Operating voltage from 8 to 28 V

• Low distortion

• Few external components, fixed gain

• High output power

• Can be used as a stereo amplifier in bridge-tied load

(BTL) or quad single-ended (SE) amplifiers

• Single-ended mode without loudspeaker capacitor

• Mute and standby mode with one- or two-pin operation

• Diagnostic information for Dynamic Distortion Detector
(DDD), high temperature (145 °C) and short-circuit

• No switch on/off plops when switching between

‘standby’ to ‘mute’ and from ‘mute’ to ‘on’

• Low offset variation at outputs between ‘mute’ and ‘on’

• Fast mute on supply voltage drops.

Protection

• Reverse polarity safe (with protection diode added)

• Short-circuit proof to ground, positive supply voltage on

all pins and across load

• ESD protected on all pins

• Thermal protection against temperatures exceeding
150 °C

• Load dump protection

• Protected against open-circuit ground pins and output

short-circuited to supply ground.

GENERAL DESCRIPTION

The TDA8581 is a stereo bridge-tied load (BTL) or a quad
single-ended amplifier that operates over a wide supply
voltage range from 8 to 28 V. This makes it suitable for
many applications, such as car radios, television and
home-sound systems.

Because of an internal voltage buffer, this device can be
used without a capacitor connected in series with the load
(SE application). A combined BTL and 2 × SE application
can also be configured.

ORDERING INFORMATION

TYPE

NUMBER

TDA8581 DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

1998 May 27 2

NAME DESCRIPTION VERSION

PACKAGE

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

I

q(tot)

I

stb

G

v

Bridge-tied load application

P

o

THD total harmonic distortion f

V

offset(DC)

V

no

SVRR supply voltage ripple rejection f

operating supply voltage 8.0 − 28 V
total quiescent current VP= 14.4 V − 120 140 mA
standby supply current VP= 14.4 V − 150µA
voltage gain single-ended 38 40 42 dB

bridge-tied load 44 46 48 dB

output power THD = 0.5%; VP= 14.4 V;

− 16 − W

RL=4Ω
THD = 0.5%; V

=24V;

P

− 28 − W

RL=8Ω

= 1 kHz; Po=1W;

i

− 0.05 − %

VP= 14.4 V; RL=8Ω
f

= 1 kHz; Po=10W;

i

− 0.05 − %

VP= 24 V; RL=8Ω

DC output offset voltage VP= 14.4 V; ‘mute’

− 10 20 mV

condition; RL=4Ω
V

= 14.4 V; ‘on’ condition − 0 120 mV

P

noise output voltage Rs=1kΩ; VP= 14.4 V − 200 320 µV

= 1 kHz; V

i

ripple(p-p)

=2V;

55 −−dB
‘on’ or ‘mute’ condition;
Rs=0Ω

Single-ended application

P

o

V

offset(DC)

V

no

output power THD = 0.5%; VP= 14.4 V;

DC output offset voltage VP= 14.4 V; ‘mute’

noise output voltage Rs=1kΩ; VP= 14.4 V − 160 280 µV

SVRR supply voltage ripple rejection f

− 4.2 − W

RL=4Ω
THD = 0.5%; V

=24V;

P

− 13 − W

RL=4Ω

− 10 20 mV

condition; RL=4Ω

= 14.4 V; ‘on’ condition − 0 120 mV

V

P

= 1 kHz; V

i

ripple(p-p)

=2V;

42 −−dB
‘on’ or ‘mute’ condition;
Rs=0Ω

1998 May 27 3

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

BLOCK DIAGRAM

V

P1VP2

handbook, full pagewidth

IN1

7

60
kΩ

TDA8581

3

15

−

V/I

+

45 kΩ

−

OA

+

1

OUT1+

IN2

IN3

IN5

IN4

MUTE

STANDBY

8

+

60

V/I

kΩ

−

V

px

30 kΩ

BUFFER

60

10

12

11

13
5

INTERFACE

kΩ

60
kΩ

V

px

45
kΩ

45
kΩ

−

V/I

+

+

V/I

−

216

PGND1 PGND2

+

OA

−

45 kΩ

BUFFER

45 kΩ

−

OA

+

+

OA

−

45 kΩ

DIAGNOSTIC

9

14

17

6

MGL141

4

OUT2−

BUFFER

OUT3−

OUT4+

DIAG

Fig.1 Block diagram.

1998 May 27 4

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

PINNING

SYMBOL PIN DESCRIPTION

OUT1+ 1 non-inverting output 1
PGND1 2 power ground 1
V

P1

3 supply voltage 1
OUT2− 4 inverting output 2
STANDBY 5 ‘standby’/’mute’/’on’ selection
DIAG 6 diagnostic output
IN1 7 input 1
IN2 8 input 2
BUFFER 9 buffer output

(single-ended output buffer)
IN3 10 input 3
IN4 11 input 4
IN5 12 input 5; signal ground capacitor
MUTE 13 ‘mute’/’on’ selection
OUT3− 14 inverting output 3
V

P2

15 supply voltage 2
PGND2 16 power ground 2
OUT4+ 17 non-inverting output 4

handbook, halfpage

STANDBY

OUT1+

PGND1

V

P1

OUT2−

DIAG

IN1
IN2

BUFFER

IN3
IN4
IN5

MUTE

OUT3−

V

P2

PGND2

OUT4+

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17

TDA8581

MGL140

1998 May 27 5

Fig.2 Pin configuration.

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

FUNCTIONAL DESCRIPTION

The TDA8581 is a multi-purpose power amplifier with four
amplifiers which can be connected in the following
configurations with high output power and low distortion (at
minimum quiescent current);

• Dual bridge-tied load (BTL) amplifiers

• Quad single-ended amplifiers

• Dual single-ended amplifiers and one bridge-tied load

amplifier.

The amplifier can be switched on (play or ‘mute’) and off
(‘standby’) by the MUTE and STANDBY pins (for
interfacing directly with a microcontroller). One-pin
operation is also possible by applying a voltage greater
than 8 V to the ‘standby’/’mute’/’on’ selection pin (pin 5) to
switch the amplifier in ‘on’ mode.

Special attention is given to the dynamic behaviour as
follows:

• Noise suppression during engine start.

• No plops when switching from ‘standby’ to ‘on’.

• Slow offset change between ‘mute’ and ‘on’ (controlled

by MUTE and STANDBY pins).

• Low noise levels, which are independent of the supply
voltage.

Protections are included to avoid the IC being damaged at:

• Over temperature: T > 150 °C.

• Short-circuit of the output pin(s) to ground or supply rail.

When short-circuited, the power dissipation is limited.

• A missing-current limiter which limits the maximum short
circuit output current to PGND or V

pins to 1.5 A.

P

The dissipation and speaker current will be minimized
because the short-circuited amplifier is switched off.
The chip temperature is limited by the temperature
protection.

• ESD protection (Human Body Model 3000 V, Machine
Model 300 V).

• Energy handling. A DC voltage of 6 V can be connected
to the output of any amplifier while the supply pins are
short-circuited to ground. No high DC current will flow
from the supply pins of the amplifier.

• Reverse battery only with protection diode added.

Diagnostics are available for the following conditions
(see Figs 4 to 7):

• Amplifier in ‘mute’

• Chip temperature greater than 145 °C

• Distortion over 2.0% due to clipping

• Short-circuit protection active.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

supply voltage operating 8 28 V

load dump protected;

− 45 V

see Fig.3

V

DIAG

I

OSM

I

ORM

V

rev

V

sc

P

tot

T

j

T

stg

T

amb

voltage on diagnostic pin − 18 V
non-repetitive peak output current − 6A
repetitive peak output current − 4.5 A
reverse polarity voltage − 6V
AC and DC short-circuit voltage of output

pins across loads and to ground or supply
pins

no external series
resistor in supply line;
note 1

− 24 V

total power dissipation − 75 W
junction temperature − 150 °C
storage temperature −55 +150 °C
operating ambient temperature −40 +150 °C

Note

1. The maximum supply voltage under short circuit conditions is 28 V with an additional resistor in the supply line of
tbf Ω.

1998 May 27 6

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

R

th j-c

CHARACTERISTICS

= 14.4 V; T

V

P

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

I

q(tot)

I

stb

V

O

V

P(mute)

V

o

V

I

STANDBY PIN (see Table 1)
V

5(stb)

V

hys(5)(stb)

V

5(mute)

V

5(on)

MUTE PIN (see Table 1)
V

13(mute)

V

13(on)

thermal resistance from junction to ambient in free air 40 K/W
thermal resistance from junction to case 1.5 K/W

=25°C; fi= 1 kHz; RL= ∞; measured in test circuit of Fig.8; unless otherwise specified.

amb

operating supply voltage 8.0 14.4 28 V
total quiescent current − 120 140 mA
standby current − 150µA
DC output voltage VP= 14.4 V − 7.0 − V
low supply voltage mute 6.0 7.0 8.0 V
single-ended and bridge-tied

VP= 14.4 V; ‘mute’ condition −−20 mV

load output voltage
DC input voltage VP= 14.4 V − 4.8 − V

voltage at STANDBY pin for

0 − 0.8 V

‘standby’ condition
hysteresis voltage at

note 1 − 0.2 − V
STANDBY pin for ‘standby’
condition

voltage at STANDBY pin for

V13< 1 V 2.0 − 5.5 V
‘mute’ condition

voltage at STANDBY pin for

V13<1V; VP> 9 V; note 2 8.0 − 18 V
‘on’ condition

voltage at MUTE pin for

V5=5V 0 − 1.0 V
‘mute’ condition

voltage at MUTE pin for

V5=5V 3.5 − 5.5 V
‘on’ condition

Diagnostic; output buffer (open-collector); see Figs 4, 5, 6 and 7
V

OL

I

LI

CD clip detector V
T

j(diag)

low level output voltage I
leakage current V

junction temperature for high

=1mA − 0.2 0.8 V

sink

= 14.4 V −−1µA

DIAG

< 0.8 V tbf 2 tbf %

DIAG

V

< 0.8 V − 145 −°C

DIAG

temperature warning

1998 May 27 7

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Stereo BTL application (see Fig.8)

THD total harmonic distortion f

P

o

G

v

α

cs

∆G

 channel unbalance −−1dB

v

V

offset(DC)

V

no

V

no(mute)

V

o(mute)

output power THD = 0.5%; VP= 14.4 V;

voltage gain V
channel separation Po=2W; fi= 1 kHz; RL=4Ω 40 55 − dB

DC output offset voltage VP= 14.4 V; ‘on’ condition − 0 120 mV

noise output voltage Rs=1kΩ; VP= 14.4 V; note 3 − 200 320 µV
noise output voltage mute note 3 − 020µV
output voltage mute V

SVRR supply voltage ripple rejection R

Z

i

input impedance 23 30 37 kΩ

CMRR common mode rejection ratio R

= 1 kHz; Po=1W; RL=4Ω− 0.05 0.1 %

i

f

= 10 kHz; Po=1W;

i

− 0.2 − %

RL=4Ω; filter: f < 30 kHz

f

= 1 kHz; Po=1W;

i

− 0.05 − %

VP= 14.4 V; RL=4Ω

f

= 1 kHz; Po=10W;

i

− 0.05 − %

VP= 24 V; RL=8Ω

15 16 − W

RL=4Ω

THD = 0.5%; V

=24V;

P

25 28 − W

RL=8Ω

THD = 10%; V

= 14.4 V;

P

18 20 − W

RL=4Ω

THD = 10%; V

=24V;

P

− 35 − W

RL=8Ω

= 3 V 44 46 48 dB

o(rms)

V

= 14.4 V; ‘mute’ condition;

P

− 10 20 mV

RL=4Ω

=1V − 15 1500 µV

i(rms)

=0Ω; fi= 1 kHz;

s

V

ripple(p-p)

= 2 V; ‘on’ or ‘mute’

48 −−dB

condition

=0Ω; V

s

i(rms)

= 0.5 V;

− 40 − dB

fi= 1 kHz

Quad SE application (see Fig.9)
THD total harmonic distortion fi= 1 kHz; Po=1W; RL=4Ω− 0.05 0.1 %

f

= 10 kHz; Po=1W;

i

− 0.2 − %

RL=4Ω; filter: f < 30 kHz

P

o

output power THD = 0.5%; VP= 14.4 V;

4 4.2 − W

RL=4Ω

THD = 0.5%; V

=24V;

P

11.5 13 − W

RL=4Ω

THD = 10%; V

= 14.4 V;

P

− 5.5 − W

RL=4Ω

THD = 10%; V

=24V;

P

14 16 − W

RL=4Ω

1998 May 27 8

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

v

α

cs

∆G

 channel unbalance −−1dB

v

V

offset(DC)

V

no

V

no(mute)

V

o(mute)

SVRR supply voltage ripple rejection f

Z

i

CMRR common mode rejection ratio V

voltage gain V

= 3 V 38 40 42 dB

o(rms)

channel separation Po=2W; fi= 1 kHz; RL=4Ω 40 46 − dB

DC output offset voltage VP= 14.4 V; ‘on’ condition − 0 100 mV

V

= 14.4 V; ‘mute’ condition;

P

− 10 20 mV

RL=4Ω
noise output voltage Rs=1kΩ; VP= 14.4 V; note 3 − 160 280 µV
noise output voltage mute note 3 − 020µV
output voltage mute V

=1V − 15 1500 µV

i(rms)

= 1 kHz; V

i

ripple(p-p)

= 2 V, ‘on’

42 −−dB

or ‘mute’ condition; Rs=0Ω
input impedance 46 60 74 kΩ

= 0.5 V; fi= 1 kHz;

i(rms)

− 40 − dB

Rs=0Ω

Notes to the characteristics

1. Hysteresis between rise and fall voltage.

2. At lower VP the voltage at the STANDBY pin for ‘on’ condition will be adjusted automatically to maintain an
‘on’ condition at low battery voltage (down to 8 V) when using one-pin operation.

3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.

Table 1 Selection of ‘standby’, ‘mute’ and ‘on’.

VOLTAGE AT PIN 5 VOLTAGE AT PIN 13 FUNCTION

V

< 0.8 V don’t care ‘standby’ (off)

5

2V<V
2V<V

< 5.3 V V13< 1 V ‘mute’ (DC settled)

5

< 5.3 V 3.5 V < V13< 5.3 V ‘on’ (AC operating)

5

V

≥ 8.0 V don’t care ‘on’ (AC operating)

5

1998 May 27 9

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

handbook, halfpage

45 V

V

P

14.4 V

Fig.3 Load dump voltage waveform.

handbook, halfpage

MGL404

DIAG

STANDBY

amplifier

output

t

r

t

f

t (ms)

mute

play

normal

amplifier

in mute

on

MGE019

Fig.4 Diagnostic waveform: normal play.

handbook, halfpage

DIAG

amplifier

output

short-circuit

overload

MGE020

Fig.5 Diagnostic waveform: short-circuit overload.

1998 May 27 10

handbook, halfpage

DIAG

amplifier

output

Fig.6 Diagnostic waveform: DDD play.

normal

play

DDD

normal

MGE021

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

handbook, halfpage

DIAG

amplifier

output

short-circuit to

PGND

V

P

MGE022

Fig.7 Diagnostic waveform: short-circuit to GND and VP.

1998 May 27 11

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

APPLICATION INFORMATION

handbook, full pagewidth

220 nF

V

inL

220 nF

V

inR

100 µF

10 V

MUTE

STANDBY

IN1

IN2

IN5

IN3

IN4

V

1000 µF

16/40 V

V

P1VP2

3

15

7

−

60

V/I

kΩ

kΩ

60

60
kΩ

+

+

V/I

−

V

px

45
kΩ

45
kΩ

−

V/I

+

TDA8581

8

V

px

30 kΩ

BUFFER

12

10

45 kΩ

−

OA

+

+

OA

−

45 kΩ

BUFFER

45 kΩ

−

OA

+

+

+

60

V/I

kΩ

11

13
5

INTERFACE

−

OA

−

45 kΩ

DIAGNOSTIC

100 nF

1

4

9

14

17

6

OUT1+

OUT2−

BUFFER

OUT3−

OUT4+

DIAG

P

+

4 or 8 Ω

−

+

4 or 8 Ω

−

+5 V

10
kΩ

Fig.8 Stereo bridge-tied load application.

1998 May 27 12

216

PGND1 PGND2

MGL142

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

handbook, full pagewidth

220 nF

V

inR

FRONT

V

V

REAR

V

inL

inR

inL

220 nF

100 µF

10 V

220 nF

220 nF

STANDBY

IN1

IN2

IN5

IN3

IN4

MUTE

V

1000 µF

16/40 V

V

P1VP2

3

15

7

−

60

V/I

kΩ

60
kΩ

60
kΩ

+

+

V/I

−

V

px

45
kΩ

45

kΩ

−

V/I

+

TDA8581

8

V

px

30 kΩ

BUFFER

12

10

45 kΩ

−

OA

+

+

OA

−

45 kΩ

BUFFER

45 kΩ

−

OA

+

+

+

60

V/I

kΩ

11

13
5

INTERFACE

−

OA

−

45 kΩ

DIAGNOSTIC

100 nF

1

4

9

14

17

6

OUT1+

OUT2−

BUFFER

OUT3−

OUT4+

DIAG

P

+

4 or 8 Ω

−

−

4 or 8 Ω

+

+

4 or 8 Ω

−

−

4 or 8 Ω

+

+5 V

10
kΩ

PGND1 PGND2

Fig.9 Quad single-ended application.

1998 May 27 13

216

MGL143

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

handbook, full pagewidth

220 nF

V

inR

100 µF

10 V

220 nF

V

inR

220 nF

V

inL

STANDBY

IN1

IN2

IN5

IN3

IN4

MUTE

V

1000 µF

16/40 V

V

P1VP2

3

15

7

−

60

V/I

kΩ

60
kΩ

60
kΩ

+

+

V/I

−

V

px

45
kΩ

45

kΩ

−

V/I

+

TDA8581

8

V

px

30 kΩ

BUFFER

12

10

45 kΩ

−

OA

+

+

OA

−

45 kΩ

BUFFER

45 kΩ

−

OA

+

+

+

60

V/I

kΩ

11

13
5

INTERFACE

−

OA

−

45 kΩ

DIAGNOSTIC

100 nF

1

4

9

14

17

6

OUT1+

OUT2−

BUFFER

OUT3−

OUT4+

DIAG

P

+

4 or 8 Ω

−

+

4 or 8 Ω

−

−

4 or 8 Ω

+

+5 V

10

kΩ

PGND1 PGND2

Fig.10 Dual single-ended and one bridge-tied load application.

1998 May 27 14

216

MGL144

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

INTERNAL PIN CONFIGURATION

PIN NAME EQUIVALENT CIRCUIT

7, 8, 10,

11 and 12

inputs

handbook, halfpage

V

P

IN

MGE014

1, 4,

outputs

14 and 17

5 and 13 mode select

handbook, halfpage

handbook, halfpage

0.5 V

V

P

OUT

P

MGE015

V

P

MGE016

1998 May 27 15

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

PACKAGE OUTLINE

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

non-concave

D

d

j

x

E

h

view B: mounting base side

B

SOT243-1

D

h

A

2

E

A

117

e

Z

DIMENSIONS (mm are the original dimensions)

UNIT A e

mm

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE
VERSION

SOT243-1

A2bpcD

17.0

4.6

4.2

0.75

0.60

15.5

0.48

0.38

IEC JEDEC EIAJ

1

e

(1)

deD

24.0

20.0

23.6

19.6

w M

b

p

(1)

E

h

12.2

10 2.54

11.8

REFERENCES

0 5 10 mm

scale

1

1.27

e

5.08

L

3

L

E

2

h

6

Q

LL3m

3.4

12.4

3.1

11.0

m

2.4

1.6

c

e

2

Qj

2.1

4.3

1.8

EUROPEAN

PROJECTION

v M

v

0.8

x

0.4w0.03

ISSUE DATE

95-03-11
97-12-16

(1)

Z

2.00

1.45

1998 May 27 16

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(order code 9398 652 90011).

Soldering by dipping or by wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

DEFINITIONS

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

stg max

). If the

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 May 27 17

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

NOTES

1998 May 27 18

Philips Semiconductors Preliminary specification

Multi-purpose high-gain power amplifier TDA8581

NOTES

1998 May 27 19

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone]

Middle East: see Italy
Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 545102/1200/01/pp20 Date of release: 1998 May 27 Document order number: 9397 750 02245