Datasheet TDA8580J Datasheet (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
TDA8580J
Multi-purpose power amplifier
Preliminary specification Supersedes data of 1998 Feb 25 File under Integrated Circuits, IC01
2000 Apr 18
Page 2
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
FEATURES General
Supply voltage range from 8 to 24 V
Low distortion
Few external components, fixed gain
High output power
Can be used as a stereo amplifier in Bridge-Tied Load
(BTL) or quad Single-Ended (SE) amplifiers
Single-ended mode without loudspeaker capacitor
Mute and standby mode with one- or two-pin operation
Diagnostic information for Dynamic Distortion Detector (DDD), high temperature (145 °C) and short-circuit
No switchon/off plops when switching between standby
and mute or mute and on; an external RC-network is prescribed to ensure plop-free operation
Low offset variation at outputs between mute and on
Fast mute on supply voltage drops.
ORDERING INFORMATION
Protection
Short-circuitproofto ground, positivesupplyvoltageand across load; the supply voltage ranges where the different short circuit conditions are guaranteed are given in Chapter “Limiting values”
ESD protected on all pins
Thermal protection against temperatures exceeding 150 °C.
GENERAL DESCRIPTION
The TDA8580J is a stereo Bridge-Tied Load (BTL) or a quad Single-Ended (SE) amplifier that operates over a wide supply voltage range from 8 to 24 V. This makes it suitable for applications such as television, home-sound systems and active speakers.
Because of an internal voltage buffer, this device can be used withouta capacitor connected in series with the load (SE application). A combined BTL and 2 × SE application can also be configured (one chip stereo and subwoofer application).
TYPE
NUMBER
TDA8580J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
NAME DESCRIPTION VERSION
PACKAGE
Page 3
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
P
I
q(tot)
I
stb
Bridge-tied load application
G
v
P
o
THD total harmonic distortion f
V
offset(DC)
V
no
SVRR supply voltage ripple rejection f
Single-ended application
G
v
P
o
V
offset(DC)
V
no
SVRR supply voltage ripple rejection f
operating supply voltage 8.0 14.4 24 V total quiescent current VP= 14.4 V 140 170 mA standby supply current VP= 14.4 V 150µA
voltage gain 31 32 33 dB output power THD = 0.5%; VP= 14.4 V; RL=4 14 15 W
THD = 0.5%; V
= 1 kHz; Po= 1 W; VP= 14.4 V;
i
= 24 V; RL=8 21 23 W
P
0.05 0.1 %
RL=4 f
= 1 kHz; Po= 10 W; VP=24V;
i
0.02 0.05 %
RL=8
DC output offset voltage VP= 14.4 V; mute condition; RL=4Ω− 10 20 mV
V
= 14.4 V; on condition 0 140 mV
P
noise output voltage Rs=1kΩ; VP= 14.4 V 100 150 µV
= 1 kHz; V
i
ripple(p-p)
= 2 V; on or mute
50 60 dB
condition; Rs=0
voltage gain 25 26 27 dB output power THD = 0.5%; VP= 14.4 V; RL=4 3.8 4.0 W
THD = 0.5%; V
= 24 V; RL=4 10.5 11.5 W
P
DC output offset voltage VP= 14.4 V; mute condition; RL=4Ω− 10 20 mV
= 14.4 V; on condition 0 100 mV
V
P
noise output voltage Rs=1kΩ; VP= 14.4 V 80 120 µV
= 1 kHz; V
i
ripple(p-p)
= 2 V; on or mute
40 45 dB
condition; Rs=0
Page 4
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
BLOCK DIAGRAM
V
P1VP2
handbook, full pagewidth
IN1
7
60 k
TDA8580J
3
15
V/I
+
45 k
OA
+
1
OUT1+
IN2
IN3
IN5
IN4
MUTE
STANDBY
8
+
60
V/I
k
V
px
30 k
BUFFER
60
10
12
11
13 5
INTERFACE
k
60 k
V
px
45
k
45
k
V/I
+
+
V/I
216
PGND1 PGND2
+
OA
45 k
BUFFER
45 k
OA
+
+
OA
45 k
DIAGNOSTIC
4
9
14
17
6
MGE010
OUT2
BUFFER
OUT3
OUT4+
DIAG
Fig.1 Block diagram.
Page 5
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
PINNING
SYMBOL PIN DESCRIPTION
OUT1+ 1 non-inverting output 1 PGND1 2 power ground 1 V
P1
3 supply voltage 1 OUT2 4 inverting output 2 STANDBY 5 standby/mute/on selection input DIAG 6 diagnostic output IN1 7 input 1 IN2 8 input 2 BUFFER 9 single-ended buffer output IN3 10 input 3 IN4 11 input 4 IN5 12 input 5; signal ground capacitor
connection MUTE 13 mute/on selection input OUT3 14 inverting output 3 V
P2
15 supply voltage 2 PGND2 16 power ground 2 OUT4+ 17 non-inverting output 4
handbook, halfpage
STANDBY
OUT1+
PGND1
V
P1
OUT2
DIAG
IN1 IN2
BUFFER
IN3 IN4 IN5
MUTE
OUT3
V
P2
PGND2
OUT4+
1 2 3 4 5 6 7 8 9
TDA8580J
10 11 12 13 14 15 16 17
MGE009
Fig.2 Pin configuration.
Page 6
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
FUNCTIONAL DESCRIPTION
TheTDA8580J is amulti-purposepoweramplifier with four amplifiers which can be connected in the following configurationswith high outputpowerandlow distortion (at minimum quiescent current):
Dual bridge-tied load amplifiers
Quad single-ended amplifiers
Dual single-ended amplifiers and one bridge-tied load
amplifier.
The amplifier can be switched in on, mute and off (standby)by the MUTEandSTANDBYpins (for interfacing directly with a microcontroller). One-pin operation is also possible by applying a voltage greater than 8 V to the STANDBY pin to switch the amplifier in on mode.
Special attention is given to the dynamic behaviour as follows:
Slow offset change between mute and on(controlled by
Low noise levels, which are independent of the supply
voltage.
Protections are includedto avoidthe IC beingdamaged at:
Over temperature: Tj> 150 °C
Short-circuit of the output pin(s) to ground or supply rail;
when short-circuited, the power dissipation is limited
ESD protection (Human Body Model 3000 V, Machine Model 300 V)
Energy handling. A DC voltage of 6 V can be connected to the output of any amplifier while the supply pins are short-circuited to ground.
Diagnostics are available for the following conditions (see Figs 3, 4 and 5):
Chip temperature above 145 °C
Distortion over 2% due to clipping
Short-circuit protection active.
MUTE and STANDBY pins)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
supply voltage operating 24 V
no signal condition 28 V
V
DIAG
I
OSM
I
ORM
V
P(scol)
V
P(scg)
voltage on pin DIAG 18 V non-repetitive peak output current 6A repetitive peak output current 4.5 A supply voltage with short-circuit across load 28 V supply voltage with short-circuit from output
26 V
to ground
V
P(scs)
supply voltage with short-circuit from output
16 V
to supply
V
P(rp)
P
tot
T
j
T
stg
T
amb
reverse polarity 6V total power dissipation 75 W junction temperature 150 °C storage temperature 55 +150 °C ambient temperature 40 +85 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th(j-a) th(j-c)
thermal resistance from junction to ambient in free air 40 K/W thermal resistance from junction to case 1.5 K/W
Page 7
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
CHARACTERISTICS
VP= 14.4 V; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
V
P
I
q(tot)
I
stb
V
O
V
P(mute)
V
I
Control pins
TANDBY PIN (see Table 1)
S V
5(stb)
V
hys(5)(stb)
V
5(mute)
V
5(on)
MUTE PIN (see Table 1) V
13(mute)
V
13(on)
Diagnostic; output buffer (open-collector); see Figs 3, 4 and 5 V
OL
I
LI
CD clip detector V T
j(diag)
Stereo BTL application; see Figs 6, 7, 10, 11, 14, 15, 18, 19, 21, 22, 23, 24, 26 and 28 THD total harmonic distortion f
P
o
G
v
=25°C; fi= 1 kHz; RL= ; measured in test circuit of Fig.28; unless otherwise specified.
amb
operating supply voltage 8.0 14.4 24 V total quiescent current 140 170 mA standby current 150µA DC output voltage 7.0 V low supply voltage mute 6.0 7.0 8.0 V DC input voltage 4.0 V
voltageat STANDBY pin forstandby
0 0.8 V
condition hysteresis voltage at STANDBY pin
note 1 0.2 V
for standby condition voltage at STANDBY pin for mute
V13< 0.8 V 2.0 5.3 V
condition voltage at STANDBY pin for on
VP> 9 V; note 2 8.0 18 V
condition
voltage at MUTE pin for mute
V5=5V 0 0.8 V
condition voltage at MUTE pin for on condition V5=5V 2.5 5.3 V
LOW-level output voltage I leakage current V
junction temperature for high
=1mA 0.2 0.8 V
sink
= 14.4 V −−1µA
DIAG
<0.8V 124%
DIAG
V
< 0.8 V 145 −°C
DIAG
temperature warning
= 10 kHz; Po= 1 W; RL=4Ω;
i
0.2 0.3 %
filter: 22 Hz < f < 30 kHz
= 1 kHz; Po= 1 W; VP= 14.4 V;
f
i
0.05 0.1 %
RL=4 f
= 1 kHz; Po= 10 W; VP=24V;
i
0.02 0.05 %
RL=8
output power THD = 0.5%; VP= 14.4 V; RL=414 15 W
voltage gain V
THD = 0.5%; V THD = 10%; V THD = 10%; V
= 3 V 31 32 33 dB
o(rms)
= 24 V; RL=8 21 23 W
P
= 14.4 V; RL=418 20 W
P
= 24 V; RL=8 28 30 W
P
Page 8
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
α
cs
∆G
v
V
offset(DC)
V
no
V
no(mute)
V
o(mute)
SVRR supply voltage ripple rejection R
Z
i
CMRR common mode rejection ratio R Quad SE application; see Figs 8, 9, 12, 13, 16, 17, 20, 25, 27 and 29 THD total harmonic distortion f
P
o
G
v
α
cs
∆G
v
V
offset(DC)
V
no
V
no(mute)
V
o(mute)
SVRR supply voltage ripple rejection f
Z
i
CMRR common mode rejection ratio V
Notes
1. Hysteresis between the rise and fall voltage when pin STANDBY is controlled with low ohmic voltage source.
2. At lower VP the voltage at the STANDBY pin for on condition will be adjusted automatically to maintain an on condition at low battery voltage (down to 8 V) when using one-pin operation.
3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
channel separation Po= 2 W; fi= 1 kHz; RL=4 60 65 dB
channel unbalance −−1dB
DC output offset voltage on condition 0 140 mV
mute condition; R
=4Ω−10 20 mV
L
noise output voltage Rs=1kΩ; VP= 14.4 V; note 3 100 150 µV noise output voltage mute note 3 020µV output voltage mute V
=1V 3 500 µV
i(rms)
=0Ω; fi= 1 kHz;
s
V
ripple(p-p)
= 2 V; on or mute
50 60 dB
condition
input impedance 23 30 37 k
=0Ω; V
s
= 1 kHz; Po= 1 W; RL=4Ω−0.05 0.1 %
i
= 10 kHz; Po= 1 W; RL=4Ω;
f
i
= 0.5 V; fi= 1 kHz 60 dB
i(rms)
0.2 0.3 %
filter: 22 Hz < f < 30 kHz f
= 1 kHz; Po= 1 W; VP=24V,
i
0.05 0.1 %
RL=4Ω; filter: 22 Hz<f<30kHz
output power THD = 0.5%; VP= 14.4 V; RL=43.8 4.0 W
voltage gain V
THD = 0.5%; V THD = 10%; V THD = 10%; V
= 3 V 25 26 27 dB
o(rms)
= 24 V; RL=4 10.5 11.5 W
P
= 14.4 V; RL=44.9 5.2 W
P
= 24 V; RL=4 14 15 W
P
channel separation Po= 2 W; fi= 1 kHz; RL=4 40 46 dB
channel unbalance −−1dB
DC output offset voltage VP= 14.4 V; on condition 0 100 mV
V
= 14.4 V; mute condition;
P
10 20 mV
RL=4 noise output voltage Rs=1kΩ; VP= 14.4 V; note 3 80 120 µV noise output voltage mute note 3 020µV output voltage mute V
=1V 3 500 µV
i(rms)
= 1 kHz; V
i
ripple(p-p)
= 2 V, on or
40 45 dB
mute condition; Rs=0 input impedance 46 60 74 k
= 0.5 V; fi= 1 kHz; Rs=0Ω− 60 dB
i(rms)
Page 9
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
Table 1 Selection of standby, mute and on
VOLTAGE AT PIN STANDBY VOLTAGE AT PIN MUTE FUNCTION
< 0.8 V don’t care standby (off) 2 to 5.3 V < 0.8 V mute (DC settled) 2 to 5.3 V 2.5 to 5.3 V on (AC operating) 8.0 V don’t care on (AC operating)
handbook, halfpage
DIAG
amplifier
output
temperature
overload
MGE020
Fig.3 Diagnostic waveform: temperature overload.
handbook, halfpage
normal
DIAG
amplifier
output
active
DDD
Fig.4 Diagnostic waveform: DDD function.
normal
MGE021
Page 10
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
handbook, halfpage
short-circuit to
GND
V
P
DIAG
amplifier
output
MGE022
Fig.5 Diagnostic waveform: short-circuit to GND
or VP.
handbook, halfpage
1
MGS700
THD
(%)
1
10
2
10
10 10
2
(1)
(2)
3
10
4
10
fi (Hz)
RL=4Ω; VP= 14.4 V; 2 channel driven. (1) Po=1W. (2) Po=10W.
Fig.6 Total harmonic distortion as a function of
frequency; BTL mode.
5
10
handbook, halfpage
1
MGS701
THD
(%)
1
10
(1)
(2)
2
10
10 10
2
3
10
4
10
fi (Hz)
RL=8Ω; VP= 24 V; 2 channel driven. (1) Po=1W. (2) Po=10W.
Fig.7 Total harmonic distortion as a function of
frequency; BTL mode.
handbook, halfpage
1
MGS702
THD
(%)
1
10
2
5
10
10
10 10
2
3
10
4
10
fi (Hz)
5
10
Po= 1 W; RL=4Ω; VP= 14.4 V; 4 channel driven.
Fig.8 Total harmonic distortion as a function of
frequency; SE mode.
2000 Apr 18 10
Page 11
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
handbook, halfpage
1
MGS703
THD
(%)
1
10
(1)
(2)
2
10
10 10
2
3
10
4
10
fi (Hz)
RL=4Ω; VP= 24 V; 4 channel driven. (1) Po=5W. (2) Po=1W.
Fig.9 Total harmonic distortion as a function of
frequency; SE mode.
2
10
handbook, halfpage
MGS704
THD
(%)
(2)
10
(1)
(3)
1
(1)
1
10
2
5
10
10
1
10
(2)
(3)
11010
Po (W)
2
RL=4Ω; VP= 14.4 V; 2 channel driven. (1) fi= 10 kHz. (2) fi= 1 kHz. (3) fi= 100 Hz.
Fig.10 Total harmonic distortion as a function of
output power; BTL mode.
2
10
handbook, halfpage
MGS705
THD
(%)
10
(2)
(3)
(1)
1
1
10
2
10
1
10
(1)
(2)
(3)
11010
Po (W)
RL=8Ω; VP= 24 V; 2 channel driven. (1) fi= 10 kHz. (2) fi= 1 kHz. (3) fi= 100 Hz.
Fig.11 Total harmonic distortion as a function of
output power; BTL mode.
2
2
10
handbook, halfpage
MGS706
THD
(%)
10
(2)
(1)
(3)
1
(1)
1
10
2
10
1
10
(2)
(3)
1
Po (W)
RL=4Ω; VP= 14.4 V; 4 channel driven (1) fi= 10 kHz. (2) fi= 1 kHz. (3) fi= 100 Hz.
Fig.12 Total harmonic distortion as a function of
output power; SE mode.
10
2000 Apr 18 11
Page 12
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
2
10
handbook, halfpage
THD
(%)
10
1
(1)
1
10
2
10
1
10
RL=4Ω; VP= 24 V; 4 channel driven. (1) fi= 10 kHz. (2) fi= 1 kHz. (3) fi= 100 Hz.
(2)
(3)
11010
(3)
MGS707
(2)
(1)
P
(W)
o
Fig.13 Total harmonic distortion as a function of
output power; SE mode.
2
30
handbook, halfpage
P
d
(W)
20
10
0
0 102030
fi= 1 kHz; RL=4Ω; VP= 14.4 V; 2 channel driven.
MGS708
Po (W)
Fig.14 Power dissipation as a function of output
power; BTL mode.
30
MGS709
Po (W)
40
handbook, halfpage
P
d
(W)
30
20
10
0
01020 40
fi= 1 kHz; RL=8Ω; VP= 24 V; 2 channel driven.
Fig.15 Power dissipation as a function of output
power; BTL mode.
16
handbook, halfpage
P
d
(W)
12
8
4
0
0246
fi= 1 kHz; RL=4Ω; VP= 14.4 V; 4 channel driven.
MGS710
Po (W)
Fig.16 Power dissipation as a function of output
power; SE mode.
2000 Apr 18 12
Page 13
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
12
MGS711
Po (W)
40
handbook, halfpage
P
d
(W)
30
20
10
0
048 16
fi= 1 kHz; RL=4Ω; VP= 24 V; 4 channel driven.
Fig.17 Power dissipation as a function of output
power; SE mode.
40
handbook, halfpage
P
o
(W)
30
20
(1)
10
0
8 121620
fi= 1 kHz; RL=4Ω; 2 channel driven. (1) THD = 10%. (2) THD = 0.5%.
(2)
VP (V)
Fig.18 Output power as a function of supply
voltage; BTL mode.
MGS712
40
handbook, halfpage
P
o
(W)
30
20
(1)
10
(2)
0
81216 24
fi= 1 kHz; RL=8Ω; 2 channel driven. (1) THD = 10%. (2) THD = 0.5%
20
Fig.19 Output power as a function of supply
voltage; BTL mode.
MGS713
VP (V)
16
handbook, halfpage
P
o
(W)
12
8
(1)
4
0
81216 24
fi= 1 kHz; RL=4Ω; 2 channel driven. (1) THD = 0.5%. (2) THD = 10%
(2)
20
Fig.20 Output power as a function of supply
voltage; SE mode.
MGS714
VP (V)
2000 Apr 18 13
Page 14
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
34
handbook, halfpage
G
v
(dB)
33
32
31
30
10 10
2
3
10
4
10
fi (Hz)
Ci= 470 nF.
Fig.21 Gain as a function of input frequency;
BTL mode.
MGS717
MGS715
P
0.8 o
(W)
0.4
0
0.4
5
10
0.8 10 10
2
3
10
4
10
fi (Hz)
5
10
THD = 0.5%; RL=4Ω; VP= 14.4 V.
Fig.22 Power bandwidth as a function of
frequency; BTL mode.
0.8
handbook, halfpage
P
o
(W)
0.4
0
0.4
0.8
10 10
THD = 0.5%; R
2
=8Ω; VP=24V.
L
3
10
Fig.23 Power bandwidth as a function of
frequency; BTL mode.
MGS716
50
handbook, halfpage
α
cs
MGS718
(dB)
54
58
62
(1)
66
4
10
fi (Hz)
5
10
70 10 10
2
(2)
3
10
4
10
fi (Hz)
5
10
Po= 2 W; RL=4Ω; VP= 14.4 V. (1) Channels 3 and 4 to channels 1 and 2. (2) Channels 1 and 2 to channels 3 and 4.
Fig.24 Channel separation as a function of
frequency; BTL mode.
2000 Apr 18 14
Page 15
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
20
handbook, halfpage
α
cs
(dB)
30
40
(1) (2) (3)
50
60
10 10
2
3
10
10
Po= 2 W; RS=0Ω; RL=4Ω; VP= 14.4 V. (1) Channel 1 to channel 2. (2) Channel 1 to channel 3. (3) Channel 1 to channel 4.
Fig.25 Channel separation as a function of
frequency; SE mode.
4
MGS719
fi (Hz)
20
handbook, halfpage
MGS720
SVRR
(dB)
40
(1)
60
5
10
80 10 10
Rs=0Ω;V
ripple(p-p)
2
=2V.
(2)
3
10
4
10
fi (Hz)
5
10
(1) Vp= 14.4 V. (2) Vp=24V.
Fig.26 SVRR as a function of frequency;
BTL mode.
20
handbook, halfpage
MGS721
SVRR
(dB)
30
40
(1)
(2)
50
60
10 10
Rs=0Ω;V
ripple(p-p)
2
=2V.
3
10
4
10
fi (Hz)
10
(1) Vp= 14.4 V. (2) Vp=24V.
Fig.27 SVRR as a function of frequency; SE mode.
5
2000 Apr 18 15
Page 16
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
APPLICATION INFORMATION
The application circuit depends on the supply voltage used. For supply voltages below 18 V the application circuits are shown in Figs 28, 29 and 30.
The typical application circuits for the different supply voltage ranges are shown in Figs 31, 32 and 33.
Additional information for the applications shown in
Figs 28, 29 and 30 The RC-network connected to pin 5 determines the
amplifier switch on/off behaviour as follows;
Switched from STANDBY to MUTE when V
switching
(typically 9 V) is enabled and the switch SW1 is closed. During MUTE there is no output noise and no offset.
Switched from MUTE to ON when the switch SW1 is opened. During switching ON the offset and noise are gradually built up. The time constant is fixed by R1 × C1.
Theinputs can betiedtogether andconnectedto one input capacitor. Becausethe input resistanceis decreased bya factor of 2, the low frequency roll-off is shifted to a higher frequency when Ci is kept the same value.
The low frequency cut-off is determined by;
12π( RiCi)××
=
f
3dB
==
---------------------------------------------------------------------­2π60 10
1
3
× 220 109×××
12 Hz.
The Boucherot network connected to the buffer (pin 9) is necessary to guarantee a low output resistance at high frequencies when the buffer is loaded (only in SE applications).
Additional information for the applications shown in
Figs 31, 32 and 33 Short circuit behaviour at high supply voltages (V
> 18 V):
p
When Vp> 18 V it is advisable to use the applications given in Figs 32 and 33. In these applications the diagnostics output is tied to pin 5 (one pin operation) or pin 13 (two pin operation). During a fault condition the amplifier is soft-muted and the amplitude of the output signal is reduced at:
– over temperature (still large dynamic range) – short to ground and over load (output current
reduced)
The 4.7 µF capacitor and the 10 kresistor connected to pin 5 or to pin 13 are used to:
– provide a stable loop – control the switch on/off behaviour – minimize the effect due to clip detection.
Use of common buffer
In SE applications the buffer output is used in place of a SE capacitor. To minimize the crosstalk (high channel separation) and distortion it is advised to connect the speaker wires as closelyas possibleto pin9 without using a shared wire. Internally in the IC all the efforts have been taken to minimize the crosstalk by locating the feedback loops as close as possible to pin 9.
If a common wire is shared by all the speakers, the series resistance of this shared wire will introduce added signal voltages resulting from the currents flowing through this wire when a connected amplifier is driven by a signal.
Optimize the THD performance
The TDA8580J application can be optimized to gain the lowest THD possible by applying the following guidelines:
SE application: minimize the shared wires to pin 9 (see section “Use of common buffer”).
Because the inputs are quasi differential, ground loops can be avoided by connecting the negative terminal of the 100 µF signal ground capacitor (connected to pin 12) to the ground pin of the signal processor.
Note: do not leave the inputs in the open condition to prevent HF oscillation.
Increase the value of electrolytic supply capacitor (typical value 1000 µF) to the maximum possible to minimize cross talk and distortion at low signal frequencies, due to the PSRR (power supply rejection ratio). Forsuppressing high frequency transients on the supply line a capacitor (typical value 100 nF) with a low ESR is required to be connected in parallel with the electrolytic capacitor. The capacitor combination must be placed as close as possible to the IC (using short interconnection tracks).
Headroom
A typical CD requires at least 12 dB dynamic headroom (a factor of 15.85), compared with the average power output, for passing the loudest parts without distortion.
2000 Apr 18 16
Page 17
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
For BTL application at Vp= 24 V, RL=8Ω and Po at THD = 0.5% (see Fig.15), the Average Listening Level (ALL) for music power without distortion yields:
P
oALL()
Table 2 P
23
-------------- -
15.85
as a function ofheadroom (music signals) for
d
=2×23 W (THD = 0.5%).
P
o
HEADROOM P
1.45 W.==
d
0dB 32W 12 dB 16 W
So for the average music listening level a total power dissipation of 16 W can be used for calculating the optimum heat sink thermal resistance.
Heatsink calculation
The measured thermalresistance ofthis package R
th(j-c)
a maximum of 1.5 K/W. For a maximum ambient temperature of 60oC the required heatsink thermal resistance can be calculated as shown in the following example.
EXAMPLE Measured or given values:
=24V
V
p
RL=8Ω (2 × BTL) Measured worst case Pd (sine wave) = 32 W T
= 150oC
j(max)
T
amb(max)
R
R
th hs()
150 60
----------------------
th(j-c)
=60oC
= 1.5 K/W
T
--------------------------------------------------
32
j max()
1.5 1.3 K/W==
T
amb max()
P
d
R
=
th j c()
Table 3 Heatsink thermal resistance as a function of
headroom for P
is
HEAD ROOM P
=2×23 W (THD = 0.5%).
o
d
0 dB 32 W 1.3 K/W 12 dB 16 W 4.12 K/W
R
th(hs)
2000 Apr 18 17
Page 18
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
handbook, full pagewidth
220 nF
V
inL
220 nF
V
inR
V
switching
(9 V typical)
R1
(1)
R2
SW1
100 µF
10 V
MUTE
STANDBY
4.7 µF
IN1
IN2
IN5
IN3
IN4
V
1000 µF
16/40 V
V
P1VP2
3
15
7
60
V/I
k
60 k
60 k
+
+
V/I
V
px
45
k
45
k
V/I
+
TDA8580J
8
V
px
30 k
BUFFER
12
10
45 k
OA
+
+
OA
45 k
BUFFER
45 k
OA
+
+
+
60
V/I
k
11
13 5
INTERFACE
216
PGND1 PGND2
OA
45 k
DIAGNOSTIC
100 nF
1
4
9
14
17
6
MGU075
OUT1+
OUT2
BUFFER
OUT3
OUT4+
DIAG
P
+
4 or 8
+
4 or 8
+5 V
10
k
(1) R1 and R2 values depend on V
applied; the value of R1 and R2 connected in parallel should be minimum 10 k.
switching
Fig.28 Stereo bridge-tied load application; VP≤ 18 V.
2000 Apr 18 18
Page 19
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
handbook, full pagewidth
220 nF
V
inR
FRONT
V
V
REAR
V
(9 V typical)
SW1
inL
inR
inL
V
switching
(1)
220 nF
100 µF
220 nF
220 nF
R1
R2
10 V
STANDBY
IN1
IN2
IN5
IN3
IN4
MUTE
4.7 µF
V
1000 µF
16/40 V
VP1V
P2
3
15
7
60
V/I
k
60 k
60 k
+
+
V/I
V
px
45 k
45
k
V/I
+
TDA8580J
8
V
px
30 k
BUFFER
12
10
45 k
OA
+
+
OA
45 k
BUFFER
45 k
OA
+
+
+
60
V/I
k
11
13 5
INTERFACE
216
PGND1 PGND2
OA
45 k
DIAGNOSTIC
100 nF
1
9
14
17
6
MGU077
4
OUT1+
OUT2
BUFFER
OUT3
OUT4+
DIAG
P
+
4 or 8
4 or 8
+
2
220 nF
+
4 or 8
4 or 8
+
+5 V
10
k
(1) R1 and R2 values depend on V
applied; the value of R1 and R2 connected in parallel should be minimum 10 k.
switching
Fig.29 Quad single-ended application; VP≤ 18 V.
2000 Apr 18 19
Page 20
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
handbook, full pagewidth
220 nF
V
inR
100 µF
10 V
220 nF
V
inR
220 nF
V
inL
STANDBY
V
switching
(9 V typical)
R1
(1)
R2
SW1
IN1
IN2
IN5
IN3
IN4
MUTE
4.7 µF
V
1000 µF
16/40 V
V
P1VP2
3
15
7
60
V/I
k
60 k
60 k
+
+
V/I
V
px
45 k
45 k
V/I
+
TDA8580J
8
V
px
30 k
BUFFER
12
10
45 k
OA
+
+
OA
45 k
BUFFER
45 k
OA
+
+
+
60
V/I
k
11
13 5
INTERFACE
216
PGND1 PGND2
OA
45 k
DIAGNOSTIC
100 nF
14
17
MGU076
1
4
9
6
OUT1+
OUT2
BUFFER
OUT3
OUT4+
DIAG
P
+
4 or 8
2
220 nF
+
4 or 8
4 or 8
+
+5 V
10
k
(1) R1 and R2 values depend on V
applied; the value of R1 and R2 connected in parallel should be minimum 10 k.
switching
Fig.30 Dual single-ended and one bridge-tied load application; VP≤ 18 V.
2000 Apr 18 20
Page 21
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
handbook, full pagewidth
V
P
100 nF
1000 µF
IN1 IN2
inputs
V
switching
(9 V typical)
R1
(3)
45 k
IN3 IN4 IN5
100 µF
STANDBY
R2
(3)
15 k
V
P1
315
7
8 10 11
TDA8580J
12
5
216
V
P2
OUT1+
1
OUT2
4
OUT3
14
OUT4+
17
BUFFER
9
DIAG
6
PGND2PGND1
4.7 µF
SW1
(1) Load conditions: quad SE (4 x 4 ), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 ) and one BTL (1 x 8 ). (2) RC combination not required in BTL mode. (3) R1 and R2 values depend on V
applied; the value of R1 and R2 connected in parallel should be minimum 10 k.
switching
Fig.31 Application 1; supply voltage range 8 V < VP≤ 18 V; 1-pin and 2-pin operation.
10 k
(1)
2
+5 V
(2)
MGS699
220 nF
(2)
handbook, full pagewidth
V
P
V
switching
(9 V typical)
(3)
(3)
100 nF
R1 45 k
R2 15 k
1000 µF
inputs
100 µF
4.7 µF
IN1 IN2 IN3 IN4 IN5
MUTE
STANDBY
3.6 V
V
P1
3
7
8 10 11
TDA8580J
12 13
5
216
V
P2
15
OUT1+
1
OUT2
4
OUT3
14
OUT4+
17
BUFFER
9
DIAG
6
PGND2PGND1
SW1
MGS697
(1) Load conditions: quad SE (4 x 4 ), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 ) and one BTL (1 x 8 ). (2) RC combination not required in BTL mode. (3) R1 and R2 valuesdepend on V
applied; the value of R1 and R2 connectedin parallel shouldbe minimum 10 k.
switching
Fig.32 Application 2; supply voltage range 18 V < VP≤ 24 V; 1-pin operation.
(1)
2
(2)
(2)
220 nF
2000 Apr 18 21
Page 22
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
handbook, full pagewidth
(1) Load conditions: quad SE (4 x 4 ), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 ) and one BTL (1 x 8 ) (2) RC combination not required in BTL mode.
V
P
100 nF
10 k
MSB
1000 µF
inputs
IN1 IN2 IN3 IN4 IN5
100 µF
STANDBY
4.7 µF
V
P1
315
7
8 10 11
TDA8580J
12
5
216
V
P2
OUT1+
1
OUT2
4
OUT3
14
OUT4+
17
BUFFER
9
MUTE
13
DIAG
6
PGND2PGND1
Fig.33 Application 3; supply voltage range 18 V < VP≤ 24 V; 2-pin operation.
4.7 µF
(1)
(2)
2
(2)
220 nF
10 k
MUTE
MGS698
INTERNAL PIN CONFIGURATION
PIN NAME EQUIVALENT CIRCUIT
7, 8, 10, 11
Inputs
and 12
1, 4, 9, 14
Outputs
and 17
7, 8, 10 and 11
V
int
0.5 V
V
int
12
MGS723
V
P
1, 4, 9, 14, and 17
P
MGL849
2000 Apr 18 22
Page 23
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
PIN NAME EQUIVALENT CIRCUIT
5 STANDBY
5
V
P
MGL848
13 MUTE
6 DIAG
V
int
13
4 V
MGS724
6
MGS722
2000 Apr 18 23
Page 24
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
D
d
j
x
E
h
view B: mounting base side
A
B
L
3
L
Q
D
h
2
E
A
117
e
Z
DIMENSIONS (mm are the original dimensions)
UNIT A e
mm
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE VERSION
SOT243-1
A2bpcD
17.0
4.6
4.4
0.75
0.60
15.5
1
e
(1)
deD
0.48
24.0
23.6
20.0
19.6
0.38
IEC JEDEC EIAJ
w M
b
p
(1)
E
h
12.2
10 2.54
11.8
REFERENCES
0 5 10 mm
scale
1
1.27
2000 Apr 18 24
e
5.08
c
2.4
1.6
PROJECTION
e
2
4.3
EUROPEAN
m
E
2
h
6
LL3m
3.4
12.4
3.1
11.0
2.1
1.8
v M
(1)
v
Qj
0.8
0.4w0.03
ISSUE DATE
97-12-16 99-12-17
Z
x
2.00
1.45
Page 25
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
SOLDERING Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual soldering.A more in-depthaccount of solderingICs can be found in our
Packages”
Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
DBS, DIP, HDIP, SDIP, SIL suitable suitable
“Data Handbook IC26; Integrated Circuit
(document order number 9398 652 90011).
PACKAGE
Thetotal contact timeofsuccessive solder wavesmustnot exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may benecessary immediately aftersoldering to keepthe temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
SOLDERING METHOD
DIPPING WAVE
(1)
stg(max)
). If the
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2000 Apr 18 25
Page 26
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
DATA SHEET STATUS
DATA SHEET STATUS
Objective specification Development This data sheet contains the design target or goal specifications for
Preliminary specification Qualification This data sheet contains preliminary data, andsupplementary data will be
Product specification Production This data sheet contains final specifications. Philips Semiconductors
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS Short-form specification The data in a short-form
specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition Limiting valuesgiven are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device atthese or atany other conditionsabovethose giveninthe Characteristics sectionsof the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentation or warrantythat suchapplicationswill be suitable for the specified use without further testing or modification.
PRODUCT
STATUS
DEFINITIONS
product development. Specification may change in any manner without notice.
published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
DISCLAIMERS Life support applications These products are not
designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expectedto resultin personalinjury. Philips Semiconductorscustomers using orselling theseproducts for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for theuse of anyofthese products, conveysnolicence or title under any patent, copyright, or mask work right to these products,and makesnorepresentations or warrantiesthat these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
(1)
2000 Apr 18 26
Page 27
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
NOTES
2000 Apr 18 27
Page 28
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2000
Internet: http://www.semiconductors.philips.com
69
Printed in The Netherlands 753503/25/03/pp28 Date of release: 2000 Apr 18 Document order number: 9397 750 05478
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