Datasheet TDA8580J Datasheet (Philips)

Download

Page 1

INTEGRATED CIRCUITS

DATA SH EET

TDA8580J

Multi-purpose power amplifier

Preliminary speciﬁcation Supersedes data of 1998 Feb 25 File under Integrated Circuits, IC01

2000 Apr 18

Page 2

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

FEATURES General

• Supply voltage range from 8 to 24 V

• Low distortion

• Few external components, fixed gain

• High output power

• Can be used as a stereo amplifier in Bridge-Tied Load

(BTL) or quad Single-Ended (SE) amplifiers

• Single-ended mode without loudspeaker capacitor

• Mute and standby mode with one- or two-pin operation

• Diagnostic information for Dynamic Distortion Detector (DDD), high temperature (145 °C) and short-circuit

• No switchon/off plops when switching between standby

and mute or mute and on; an external RC-network is prescribed to ensure plop-free operation

• Low offset variation at outputs between mute and on

• Fast mute on supply voltage drops.

ORDERING INFORMATION

Protection

• Short-circuitproofto ground, positivesupplyvoltageand across load; the supply voltage ranges where the different short circuit conditions are guaranteed are given in Chapter “Limiting values”

• ESD protected on all pins

• Thermal protection against temperatures exceeding 150 °C.

GENERAL DESCRIPTION

The TDA8580J is a stereo Bridge-Tied Load (BTL) or a quad Single-Ended (SE) amplifier that operates over a wide supply voltage range from 8 to 24 V. This makes it suitable for applications such as television, home-sound systems and active speakers.

Because of an internal voltage buffer, this device can be used withouta capacitor connected in series with the load (SE application). A combined BTL and 2 × SE application can also be configured (one chip stereo and subwoofer application).

TYPE

NUMBER

TDA8580J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

NAME DESCRIPTION VERSION

PACKAGE

2000 Apr 18 2

Page 3

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

q(tot)

stb

Bridge-tied load application

THD total harmonic distortion f

offset(DC)

SVRR supply voltage ripple rejection f

Single-ended application

offset(DC)

SVRR supply voltage ripple rejection f

operating supply voltage 8.0 14.4 24 V total quiescent current VP= 14.4 V − 140 170 mA standby supply current VP= 14.4 V − 150µA

voltage gain 31 32 33 dB output power THD = 0.5%; VP= 14.4 V; RL=4Ω 14 15 − W

THD = 0.5%; V

= 1 kHz; Po= 1 W; VP= 14.4 V;

= 24 V; RL=8Ω 21 23 − W

− 0.05 0.1 %

RL=4Ω f

= 1 kHz; Po= 10 W; VP=24V;

− 0.02 0.05 %

RL=8Ω

DC output offset voltage VP= 14.4 V; mute condition; RL=4Ω− 10 20 mV

= 14.4 V; on condition − 0 140 mV

noise output voltage Rs=1kΩ; VP= 14.4 V − 100 150 µV

= 1 kHz; V

ripple(p-p)

= 2 V; on or mute

50 60 − dB

condition; Rs=0Ω

voltage gain 25 26 27 dB output power THD = 0.5%; VP= 14.4 V; RL=4Ω 3.8 4.0 − W

THD = 0.5%; V

= 24 V; RL=4Ω 10.5 11.5 − W

DC output offset voltage VP= 14.4 V; mute condition; RL=4Ω− 10 20 mV

= 14.4 V; on condition − 0 100 mV

noise output voltage Rs=1kΩ; VP= 14.4 V − 80 120 µV

= 1 kHz; V

ripple(p-p)

= 2 V; on or mute

40 45 − dB

condition; Rs=0Ω

2000 Apr 18 3

Page 4

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

BLOCK DIAGRAM

P1VP2

handbook, full pagewidth

IN1

60 kΩ

TDA8580J

−

V/I

45 kΩ

−

OUT1+

IN2

IN3

IN5

IN4

MUTE

STANDBY

V/I

kΩ

−

30 kΩ

BUFFER

13 5

INTERFACE

kΩ

60 kΩ

kΩ

−

V/I

−

216

PGND1 PGND2

−

45 kΩ

BUFFER

45 kΩ

−

45 kΩ

DIAGNOSTIC

MGE010

OUT2−

BUFFER

OUT3−

OUT4+

DIAG

Fig.1 Block diagram.

2000 Apr 18 4

Page 5

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

PINNING

SYMBOL PIN DESCRIPTION

OUT1+ 1 non-inverting output 1 PGND1 2 power ground 1 V

3 supply voltage 1 OUT2− 4 inverting output 2 STANDBY 5 standby/mute/on selection input DIAG 6 diagnostic output IN1 7 input 1 IN2 8 input 2 BUFFER 9 single-ended buffer output IN3 10 input 3 IN4 11 input 4 IN5 12 input 5; signal ground capacitor

connection MUTE 13 mute/on selection input OUT3− 14 inverting output 3 V

15 supply voltage 2 PGND2 16 power ground 2 OUT4+ 17 non-inverting output 4

handbook, halfpage

STANDBY

OUT1+

PGND1

OUT2−

DIAG

IN1 IN2

BUFFER

IN3 IN4 IN5

MUTE

OUT3−

PGND2

OUT4+

1 2 3 4 5 6 7 8 9

TDA8580J

10 11 12 13 14 15 16 17

MGE009

2000 Apr 18 5

Fig.2 Pin configuration.

Page 6

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

FUNCTIONAL DESCRIPTION

TheTDA8580J is amulti-purposepoweramplifier with four amplifiers which can be connected in the following configurationswith high outputpowerandlow distortion (at minimum quiescent current):

• Dual bridge-tied load amplifiers

• Quad single-ended amplifiers

• Dual single-ended amplifiers and one bridge-tied load

amplifier.

The amplifier can be switched in on, mute and off (standby)by the MUTEandSTANDBYpins (for interfacing directly with a microcontroller). One-pin operation is also possible by applying a voltage greater than 8 V to the STANDBY pin to switch the amplifier in on mode.

Special attention is given to the dynamic behaviour as follows:

• Slow offset change between mute and on(controlled by

• Low noise levels, which are independent of the supply

voltage.

Protections are includedto avoidthe IC beingdamaged at:

• Over temperature: Tj> 150 °C

• Short-circuit of the output pin(s) to ground or supply rail;

when short-circuited, the power dissipation is limited

• ESD protection (Human Body Model 3000 V, Machine Model 300 V)

• Energy handling. A DC voltage of 6 V can be connected to the output of any amplifier while the supply pins are short-circuited to ground.

Diagnostics are available for the following conditions (see Figs 3, 4 and 5):

• Chip temperature above 145 °C

• Distortion over 2% due to clipping

• Short-circuit protection active.

MUTE and STANDBY pins)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

supply voltage operating − 24 V

no signal condition − 28 V

DIAG

OSM

ORM

P(scol)

P(scg)

voltage on pin DIAG − 18 V non-repetitive peak output current − 6A repetitive peak output current − 4.5 A supply voltage with short-circuit across load − 28 V supply voltage with short-circuit from output

− 26 V

to ground

P(scs)

supply voltage with short-circuit from output

− 16 V

to supply

P(rp)

tot

stg

amb

reverse polarity − 6V total power dissipation − 75 W junction temperature − 150 °C storage temperature −55 +150 °C ambient temperature −40 +85 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R R

th(j-a) th(j-c)

thermal resistance from junction to ambient in free air 40 K/W thermal resistance from junction to case 1.5 K/W

2000 Apr 18 6

Page 7

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

CHARACTERISTICS

VP= 14.4 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

q(tot)

stb

P(mute)

Control pins

TANDBY PIN (see Table 1)

S V

5(stb)

hys(5)(stb)

5(mute)

5(on)

MUTE PIN (see Table 1) V

13(mute)

13(on)

Diagnostic; output buffer (open-collector); see Figs 3, 4 and 5 V

CD clip detector V T

j(diag)

Stereo BTL application; see Figs 6, 7, 10, 11, 14, 15, 18, 19, 21, 22, 23, 24, 26 and 28 THD total harmonic distortion f

=25°C; fi= 1 kHz; RL= ∞; measured in test circuit of Fig.28; unless otherwise speciﬁed.

amb

operating supply voltage 8.0 14.4 24 V total quiescent current − 140 170 mA standby current − 150µA DC output voltage − 7.0 − V low supply voltage mute 6.0 7.0 8.0 V DC input voltage − 4.0 − V

voltageat STANDBY pin forstandby

0 − 0.8 V

condition hysteresis voltage at STANDBY pin

note 1 − 0.2 − V

for standby condition voltage at STANDBY pin for mute

V13< 0.8 V 2.0 − 5.3 V

condition voltage at STANDBY pin for on

VP> 9 V; note 2 8.0 − 18 V

condition

voltage at MUTE pin for mute

V5=5V 0 − 0.8 V

condition voltage at MUTE pin for on condition V5=5V 2.5 − 5.3 V

LOW-level output voltage I leakage current V

junction temperature for high

=1mA − 0.2 0.8 V

sink

= 14.4 V −−1µA

DIAG

<0.8V 124%

DIAG

< 0.8 V − 145 −°C

DIAG

temperature warning

= 10 kHz; Po= 1 W; RL=4Ω;

− 0.2 0.3 %

ﬁlter: 22 Hz < f < 30 kHz

= 1 kHz; Po= 1 W; VP= 14.4 V;

− 0.05 0.1 %

RL=4Ω f

= 1 kHz; Po= 10 W; VP=24V;

− 0.02 0.05 %

RL=8Ω

output power THD = 0.5%; VP= 14.4 V; RL=4Ω 14 15 − W

voltage gain V

THD = 0.5%; V THD = 10%; V THD = 10%; V

= 3 V 31 32 33 dB

o(rms)

= 24 V; RL=8Ω 21 23 − W

= 14.4 V; RL=4Ω 18 20 − W

= 24 V; RL=8Ω 28 30 − W

2000 Apr 18 7

Page 8

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆G

offset(DC)

no(mute)

o(mute)

SVRR supply voltage ripple rejection R

CMRR common mode rejection ratio R Quad SE application; see Figs 8, 9, 12, 13, 16, 17, 20, 25, 27 and 29 THD total harmonic distortion f

∆G

offset(DC)

no(mute)

o(mute)

SVRR supply voltage ripple rejection f

CMRR common mode rejection ratio V

Notes

1. Hysteresis between the rise and fall voltage when pin STANDBY is controlled with low ohmic voltage source.

2. At lower VP the voltage at the STANDBY pin for on condition will be adjusted automatically to maintain an on condition at low battery voltage (down to 8 V) when using one-pin operation.

3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.

channel separation Po= 2 W; fi= 1 kHz; RL=4Ω 60 65 − dB

 channel unbalance −−1dB

DC output offset voltage on condition − 0 140 mV

mute condition; R

=4Ω−10 20 mV

noise output voltage Rs=1kΩ; VP= 14.4 V; note 3 − 100 150 µV noise output voltage mute note 3 − 020µV output voltage mute V

=1V − 3 500 µV

i(rms)

=0Ω; fi= 1 kHz;

ripple(p-p)

= 2 V; on or mute

50 60 − dB

condition

input impedance 23 30 37 kΩ

=0Ω; V

= 1 kHz; Po= 1 W; RL=4Ω−0.05 0.1 %

= 10 kHz; Po= 1 W; RL=4Ω;

= 0.5 V; fi= 1 kHz − 60 − dB

i(rms)

− 0.2 0.3 %

ﬁlter: 22 Hz < f < 30 kHz f

= 1 kHz; Po= 1 W; VP=24V,

− 0.05 0.1 %

RL=4Ω; ﬁlter: 22 Hz<f<30kHz

output power THD = 0.5%; VP= 14.4 V; RL=4Ω 3.8 4.0 − W

voltage gain V

THD = 0.5%; V THD = 10%; V THD = 10%; V

= 3 V 25 26 27 dB

o(rms)

= 24 V; RL=4Ω 10.5 11.5 − W

= 14.4 V; RL=4Ω 4.9 5.2 − W

= 24 V; RL=4Ω 14 15 − W

channel separation Po= 2 W; fi= 1 kHz; RL=4Ω 40 46 − dB

 channel unbalance −−1dB

DC output offset voltage VP= 14.4 V; on condition − 0 100 mV

= 14.4 V; mute condition;

− 10 20 mV

RL=4Ω noise output voltage Rs=1kΩ; VP= 14.4 V; note 3 − 80 120 µV noise output voltage mute note 3 − 020µV output voltage mute V

=1V − 3 500 µV

i(rms)

= 1 kHz; V

ripple(p-p)

= 2 V, on or

40 45 − dB

mute condition; Rs=0Ω input impedance 46 60 74 kΩ

= 0.5 V; fi= 1 kHz; Rs=0Ω− 60 − dB

i(rms)

2000 Apr 18 8

Page 9

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

Table 1 Selection of standby, mute and on

VOLTAGE AT PIN STANDBY VOLTAGE AT PIN MUTE FUNCTION

< 0.8 V don’t care standby (off) 2 to 5.3 V < 0.8 V mute (DC settled) 2 to 5.3 V 2.5 to 5.3 V on (AC operating) ≥ 8.0 V don’t care on (AC operating)

handbook, halfpage

DIAG

amplifier

output

temperature

overload

MGE020

Fig.3 Diagnostic waveform: temperature overload.

handbook, halfpage

normal

DIAG

amplifier

output

active

DDD

Fig.4 Diagnostic waveform: DDD function.

normal

MGE021

2000 Apr 18 9

Page 10

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, halfpage

short-circuit to

GND

DIAG

amplifier

output

MGE022

Fig.5 Diagnostic waveform: short-circuit to GND

or VP.

handbook, halfpage

MGS700

THD

(%)

−1

−2

10 10

(1)

(2)

fi (Hz)

RL=4Ω; VP= 14.4 V; 2 channel driven. (1) Po=1W. (2) Po=10W.

Fig.6 Total harmonic distortion as a function of

frequency; BTL mode.

handbook, halfpage

MGS701

THD

(%)

−1

(1)

(2)

−2

10 10

fi (Hz)

RL=8Ω; VP= 24 V; 2 channel driven. (1) Po=1W. (2) Po=10W.

Fig.7 Total harmonic distortion as a function of

frequency; BTL mode.

handbook, halfpage

MGS702

THD

(%)

−1

−2

10 10

fi (Hz)

Po= 1 W; RL=4Ω; VP= 14.4 V; 4 channel driven.

Fig.8 Total harmonic distortion as a function of

frequency; SE mode.

2000 Apr 18 10

Page 11

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, halfpage

MGS703

THD

(%)

−1

(1)

(2)

−2

10 10

fi (Hz)

RL=4Ω; VP= 24 V; 4 channel driven. (1) Po=5W. (2) Po=1W.

Fig.9 Total harmonic distortion as a function of

frequency; SE mode.

handbook, halfpage

MGS704

THD

(%)

(2)

(1)

(3)

(1)

−1

−2

−1

(2)

(3)

11010

Po (W)

RL=4Ω; VP= 14.4 V; 2 channel driven. (1) fi= 10 kHz. (2) fi= 1 kHz. (3) fi= 100 Hz.

Fig.10 Total harmonic distortion as a function of

output power; BTL mode.

handbook, halfpage

MGS705

THD

(%)

(2)

(3)

(1)

−1

−2

−1

(1)

(2)

(3)

11010

Po (W)

RL=8Ω; VP= 24 V; 2 channel driven. (1) fi= 10 kHz. (2) fi= 1 kHz. (3) fi= 100 Hz.

Fig.11 Total harmonic distortion as a function of

output power; BTL mode.

handbook, halfpage

MGS706

THD

(%)

(2)

(1)

(3)

(1)

−1

−2

−1

(2)

(3)

Po (W)

RL=4Ω; VP= 14.4 V; 4 channel driven (1) fi= 10 kHz. (2) fi= 1 kHz. (3) fi= 100 Hz.

Fig.12 Total harmonic distortion as a function of

output power; SE mode.

2000 Apr 18 11

Page 12

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, halfpage

THD

(%)

(1)

−1

−2

−1

RL=4Ω; VP= 24 V; 4 channel driven. (1) fi= 10 kHz. (2) fi= 1 kHz. (3) fi= 100 Hz.

(2)

(3)

11010

(3)

MGS707

(2)

(1)

(W)

Fig.13 Total harmonic distortion as a function of

output power; SE mode.

handbook, halfpage

(W)

0 102030

fi= 1 kHz; RL=4Ω; VP= 14.4 V; 2 channel driven.

MGS708

Po (W)

Fig.14 Power dissipation as a function of output

power; BTL mode.

MGS709

Po (W)

handbook, halfpage

(W)

01020 40

fi= 1 kHz; RL=8Ω; VP= 24 V; 2 channel driven.

Fig.15 Power dissipation as a function of output

power; BTL mode.

handbook, halfpage

(W)

0246

fi= 1 kHz; RL=4Ω; VP= 14.4 V; 4 channel driven.

MGS710

Po (W)

Fig.16 Power dissipation as a function of output

power; SE mode.

2000 Apr 18 12

Page 13

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

MGS711

Po (W)

handbook, halfpage

(W)

048 16

fi= 1 kHz; RL=4Ω; VP= 24 V; 4 channel driven.

Fig.17 Power dissipation as a function of output

power; SE mode.

handbook, halfpage

(W)

(1)

8 121620

fi= 1 kHz; RL=4Ω; 2 channel driven. (1) THD = 10%. (2) THD = 0.5%.

(2)

VP (V)

Fig.18 Output power as a function of supply

voltage; BTL mode.

MGS712

handbook, halfpage

(W)

(1)

(2)

81216 24

fi= 1 kHz; RL=8Ω; 2 channel driven. (1) THD = 10%. (2) THD = 0.5%

Fig.19 Output power as a function of supply

voltage; BTL mode.

MGS713

VP (V)

handbook, halfpage

(W)

(1)

81216 24

fi= 1 kHz; RL=4Ω; 2 channel driven. (1) THD = 0.5%. (2) THD = 10%

(2)

Fig.20 Output power as a function of supply

voltage; SE mode.

MGS714

VP (V)

2000 Apr 18 13

Page 14

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, halfpage

(dB)

10 10

fi (Hz)

Ci= 470 nF.

Fig.21 Gain as a function of input frequency;

BTL mode.

MGS717

MGS715

∆P

0.8 o

(W)

0.4

−0.4

−0.8 10 10

fi (Hz)

THD = 0.5%; RL=4Ω; VP= 14.4 V.

Fig.22 Power bandwidth as a function of

frequency; BTL mode.

0.8

handbook, halfpage

∆P

(W)

0.4

−0.4

−0.8

10 10

THD = 0.5%; R

=8Ω; VP=24V.

Fig.23 Power bandwidth as a function of

frequency; BTL mode.

MGS716

−50

handbook, halfpage

MGS718

(dB)

−54

−58

−62

(1)

−66

fi (Hz)

−70 10 10

(2)

fi (Hz)

Po= 2 W; RL=4Ω; VP= 14.4 V. (1) Channels 3 and 4 to channels 1 and 2. (2) Channels 1 and 2 to channels 3 and 4.

Fig.24 Channel separation as a function of

frequency; BTL mode.

2000 Apr 18 14

Page 15

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

−20

handbook, halfpage

(dB)

−30

−40

(1) (2) (3)

−50

−60

10 10

Po= 2 W; RS=0Ω; RL=4Ω; VP= 14.4 V. (1) Channel 1 to channel 2. (2) Channel 1 to channel 3. (3) Channel 1 to channel 4.

Fig.25 Channel separation as a function of

frequency; SE mode.

MGS719

fi (Hz)

−20

handbook, halfpage

MGS720

SVRR

(dB)

−40

(1)

−60

−80 10 10

Rs=0Ω;V

ripple(p-p)

=2V.

(2)

fi (Hz)

(1) Vp= 14.4 V. (2) Vp=24V.

Fig.26 SVRR as a function of frequency;

BTL mode.

−20

handbook, halfpage

MGS721

SVRR

(dB)

−30

−40

(1)

(2)

−50

−60

10 10

Rs=0Ω;V

ripple(p-p)

=2V.

fi (Hz)

(1) Vp= 14.4 V. (2) Vp=24V.

Fig.27 SVRR as a function of frequency; SE mode.

2000 Apr 18 15

Page 16

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

APPLICATION INFORMATION

The application circuit depends on the supply voltage used. For supply voltages below 18 V the application circuits are shown in Figs 28, 29 and 30.

The typical application circuits for the different supply voltage ranges are shown in Figs 31, 32 and 33.

Additional information for the applications shown in

Figs 28, 29 and 30 The RC-network connected to pin 5 determines the

amplifier switch on/off behaviour as follows;

• Switched from STANDBY to MUTE when V

switching

(typically 9 V) is enabled and the switch SW1 is closed. During MUTE there is no output noise and no offset.

• Switched from MUTE to ON when the switch SW1 is opened. During switching ON the offset and noise are gradually built up. The time constant is fixed by R1 × C1.

Theinputs can betiedtogether andconnectedto one input capacitor. Becausethe input resistanceis decreased bya factor of 2, the low frequency roll-off is shifted to a higher frequency when Ci is kept the same value.

The low frequency cut-off is determined by;

12π( RiCi)××⁄

3dB–

---------------------------------------------------------------------2π60 10

× 220 109–×××

12 Hz.

The Boucherot network connected to the buffer (pin 9) is necessary to guarantee a low output resistance at high frequencies when the buffer is loaded (only in SE applications).

Additional information for the applications shown in

Figs 31, 32 and 33 Short circuit behaviour at high supply voltages (V

> 18 V):

• When Vp> 18 V it is advisable to use the applications given in Figs 32 and 33. In these applications the diagnostics output is tied to pin 5 (one pin operation) or pin 13 (two pin operation). During a fault condition the amplifier is soft-muted and the amplitude of the output signal is reduced at:

– over temperature (still large dynamic range) – short to ground and over load (output current

reduced)

• The 4.7 µF capacitor and the 10 kΩ resistor connected to pin 5 or to pin 13 are used to:

– provide a stable loop – control the switch on/off behaviour – minimize the effect due to clip detection.

Use of common buffer

In SE applications the buffer output is used in place of a SE capacitor. To minimize the crosstalk (high channel separation) and distortion it is advised to connect the speaker wires as closelyas possibleto pin9 without using a shared wire. Internally in the IC all the efforts have been taken to minimize the crosstalk by locating the feedback loops as close as possible to pin 9.

If a common wire is shared by all the speakers, the series resistance of this shared wire will introduce added signal voltages resulting from the currents flowing through this wire when a connected amplifier is driven by a signal.

Optimize the THD performance

The TDA8580J application can be optimized to gain the lowest THD possible by applying the following guidelines:

• SE application: minimize the shared wires to pin 9 (see section “Use of common buffer”).

• Because the inputs are quasi differential, ground loops can be avoided by connecting the negative terminal of the 100 µF signal ground capacitor (connected to pin 12) to the ground pin of the signal processor.

Note: do not leave the inputs in the open condition to prevent HF oscillation.

• Increase the value of electrolytic supply capacitor (typical value 1000 µF) to the maximum possible to minimize cross talk and distortion at low signal frequencies, due to the PSRR (power supply rejection ratio). Forsuppressing high frequency transients on the supply line a capacitor (typical value 100 nF) with a low ESR is required to be connected in parallel with the electrolytic capacitor. The capacitor combination must be placed as close as possible to the IC (using short interconnection tracks).

Headroom

A typical CD requires at least 12 dB dynamic headroom (a factor of 15.85), compared with the average power output, for passing the loudest parts without distortion.

2000 Apr 18 16

Page 17

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

For BTL application at Vp= 24 V, RL=8Ω and Po at THD = 0.5% (see Fig.15), the Average Listening Level (ALL) for music power without distortion yields:

oALL()

Table 2 P

-------------- -

15.85

as a function ofheadroom (music signals) for

=2×23 W (THD = 0.5%).

HEADROOM P

1.45 W.==

0dB 32W 12 dB 16 W

So for the average music listening level a total power dissipation of 16 W can be used for calculating the optimum heat sink thermal resistance.

Heatsink calculation

The measured thermalresistance ofthis package R

th(j-c)

a maximum of 1.5 K/W. For a maximum ambient temperature of 60oC the required heatsink thermal resistance can be calculated as shown in the following example.

EXAMPLE Measured or given values:

=24V

RL=8Ω (2 × BTL) Measured worst case Pd (sine wave) = 32 W T

= 150oC

j(max)

amb(max)

th hs()

150 60–

----------------------

th(j-c)

=60oC

= 1.5 K/W

--------------------------------------------------

–

j max()

1.5 1.3 K/W=–=

amb max()

–=

th j c–()

Table 3 Heatsink thermal resistance as a function of

headroom for P

HEAD ROOM P

=2×23 W (THD = 0.5%).

0 dB 32 W 1.3 K/W 12 dB 16 W 4.12 K/W

th(hs)

2000 Apr 18 17

Page 18

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, full pagewidth

220 nF

inL

220 nF

inR

switching

(9 V typical)

(1)

SW1

100 µF

10 V

MUTE

STANDBY

4.7 µF

IN1

IN2

IN5

IN3

IN4

1000 µF

16/40 V

P1VP2

−

V/I

kΩ

60 kΩ

V/I

−

kΩ

−

V/I

TDA8580J

30 kΩ

BUFFER

45 kΩ

−

45 kΩ

BUFFER

45 kΩ

−

V/I

kΩ

13 5

INTERFACE

−

216

PGND1 PGND2

−

45 kΩ

DIAGNOSTIC

100 nF

MGU075

OUT1+

OUT2−

BUFFER

OUT3−

OUT4+

DIAG

4 or 8 Ω

−

4 or 8 Ω

−

+5 V

kΩ

(1) R1 and R2 values depend on V

applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.

switching

Fig.28 Stereo bridge-tied load application; VP≤ 18 V.

2000 Apr 18 18

Page 19

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, full pagewidth

220 nF

inR

FRONT

REAR

(9 V typical)

SW1

inL

inR

inL

switching

(1)

220 nF

100 µF

220 nF

10 V

STANDBY

IN1

IN2

IN5

IN3

IN4

MUTE

4.7 µF

1000 µF

16/40 V

VP1V

−

V/I

kΩ

60 kΩ

V/I

−

45 kΩ

kΩ

−

V/I

TDA8580J

30 kΩ

BUFFER

45 kΩ

−

45 kΩ

BUFFER

45 kΩ

−

V/I

kΩ

13 5

INTERFACE

−

216

PGND1 PGND2

−

45 kΩ

DIAGNOSTIC

100 nF

MGU077

OUT1+

OUT2−

BUFFER

OUT3−

OUT4+

DIAG

4 or 8 Ω

−

4 or 8 Ω

2 Ω

220 nF

4 or 8 Ω

−

4 or 8 Ω

+5 V

kΩ

(1) R1 and R2 values depend on V

applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.

switching

Fig.29 Quad single-ended application; VP≤ 18 V.

2000 Apr 18 19

Page 20

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, full pagewidth

220 nF

inR

100 µF

10 V

220 nF

inR

220 nF

inL

STANDBY

switching

(9 V typical)

(1)

SW1

IN1

IN2

IN5

IN3

IN4

MUTE

4.7 µF

1000 µF

16/40 V

P1VP2

−

V/I

kΩ

60 kΩ

V/I

−

45 kΩ

−

V/I

TDA8580J

30 kΩ

BUFFER

45 kΩ

−

45 kΩ

BUFFER

45 kΩ

−

V/I

kΩ

13 5

INTERFACE

−

216

PGND1 PGND2

−

45 kΩ

DIAGNOSTIC

100 nF

MGU076

OUT1+

OUT2−

BUFFER

OUT3−

OUT4+

DIAG

4 or 8 Ω

−

2 Ω

220 nF

4 or 8 Ω

−

4 or 8 Ω

+5 V

kΩ

(1) R1 and R2 values depend on V

applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.

switching

Fig.30 Dual single-ended and one bridge-tied load application; VP≤ 18 V.

2000 Apr 18 20

Page 21

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, full pagewidth

100 nF

1000 µF

IN1 IN2

inputs

switching

(9 V typical)

(3)

45 kΩ

IN3 IN4 IN5

100 µF

STANDBY

(3)

15 kΩ

315

8 10 11

TDA8580J

216

OUT1+

OUT2−

OUT3−

OUT4+

BUFFER

DIAG

PGND2PGND1

4.7 µF

SW1

(1) Load conditions: quad SE (4 x 4 Ω), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 Ω) and one BTL (1 x 8 Ω). (2) RC combination not required in BTL mode. (3) R1 and R2 values depend on V

applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.

switching

Fig.31 Application 1; supply voltage range 8 V < VP≤ 18 V; 1-pin and 2-pin operation.

10 kΩ

(1)

2 Ω

+5 V

(2)

MGS699

220 nF

(2)

handbook, full pagewidth

switching

(9 V typical)

(3)

100 nF

R1 45 kΩ

R2 15 kΩ

1000 µF

inputs

100 µF

4.7 µF

IN1 IN2 IN3 IN4 IN5

MUTE

STANDBY

3.6 V

8 10 11

TDA8580J

12 13

216

OUT1+

OUT2−

OUT3−

OUT4+

BUFFER

DIAG

PGND2PGND1

SW1

MGS697

(1) Load conditions: quad SE (4 x 4 Ω), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 Ω) and one BTL (1 x 8 Ω). (2) RC combination not required in BTL mode. (3) R1 and R2 valuesdepend on V

applied; the value of R1 and R2 connectedin parallel shouldbe minimum 10 kΩ.

switching

Fig.32 Application 2; supply voltage range 18 V < VP≤ 24 V; 1-pin operation.

(1)

2 Ω

(2)

220 nF

2000 Apr 18 21

Page 22

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, full pagewidth

(1) Load conditions: quad SE (4 x 4 Ω), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 Ω) and one BTL (1 x 8 Ω) (2) RC combination not required in BTL mode.

100 nF

10 kΩ

MSB

1000 µF

inputs

IN1 IN2 IN3 IN4 IN5

100 µF

STANDBY

4.7 µF

315

8 10 11

TDA8580J

216

OUT1+

OUT2−

OUT3−

OUT4+

BUFFER

MUTE

DIAG

PGND2PGND1

Fig.33 Application 3; supply voltage range 18 V < VP≤ 24 V; 2-pin operation.

4.7 µF

(1)

(2)

2 Ω

(2)

220 nF

10 kΩ

MUTE

MGS698

INTERNAL PIN CONFIGURATION

PIN NAME EQUIVALENT CIRCUIT

7, 8, 10, 11

Inputs

and 12

1, 4, 9, 14

Outputs

and 17

7, 8, 10 and 11

int

0.5 V

int

MGS723

1, 4, 9, 14, and 17

MGL849

2000 Apr 18 22

Page 23

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

PIN NAME EQUIVALENT CIRCUIT

5 STANDBY

MGL848

13 MUTE

6 DIAG

int

4 V

MGS724

MGS722

2000 Apr 18 23

Page 24

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

PACKAGE OUTLINE

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

SOT243-1

non-concave

view B: mounting base side

117

DIMENSIONS (mm are the original dimensions)

UNIT A e

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE VERSION

SOT243-1

A2bpcD

17.0

4.6

4.4

0.75

0.60

15.5

(1)

deD

0.48

24.0

23.6

20.0

19.6

0.38

IEC JEDEC EIAJ

w M

(1)

12.2

10 2.54

11.8

REFERENCES

0 5 10 mm

scale

1.27

2000 Apr 18 24

5.08

2.4

1.6

PROJECTION

4.3

EUROPEAN

LL3m

3.4

12.4

3.1

11.0

2.1

1.8

v M

(1)

0.8

0.4w0.03

ISSUE DATE

97-12-16 99-12-17

2.00

1.45

Page 25

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

SOLDERING Introduction to soldering through-hole mount

packages

This text gives a brief insight to wave, dip and manual soldering.A more in-depthaccount of solderingICs can be found in our

Packages”

Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board.

Soldering by dipping or by solder wave

The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

DBS, DIP, HDIP, SDIP, SIL suitable suitable

“Data Handbook IC26; Integrated Circuit

(document order number 9398 652 90011).

PACKAGE

Thetotal contact timeofsuccessive solder wavesmustnot exceed 5 seconds.

The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may benecessary immediately aftersoldering to keepthe temperature within the permissible limit.

Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.

SOLDERING METHOD

DIPPING WAVE

(1)

stg(max)

). If the

Note

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

2000 Apr 18 25

Page 26

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

DATA SHEET STATUS

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for

Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, andsupplementary data will be

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values definition Limiting valuesgiven are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device atthese or atany other conditionsabovethose giveninthe Characteristics sectionsof the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentation or warrantythat suchapplicationswill be suitable for the specified use without further testing or modification.

PRODUCT

STATUS

DEFINITIONS

product development. Speciﬁcation may change in any manner without notice.

published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

DISCLAIMERS Life support applications  These products are not

designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expectedto resultin personalinjury. Philips Semiconductorscustomers using orselling theseproducts for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for theuse of anyofthese products, conveysnolicence or title under any patent, copyright, or mask work right to these products,and makesnorepresentations or warrantiesthat these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

(1)

2000 Apr 18 26

Page 27

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

NOTES

2000 Apr 18 27

Page 28

Philips Semiconductors – a w orldwide compan y

Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087

China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA(MI), Tel. +39 039 203 6838, Fax +39 039 203 6800

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001

Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398

South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382

Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087

Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 3341 299, Fax.+381 11 3342 553

For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 753503/25/03/pp28 Date of release: 2000 Apr 18 Document order number: 9397 750 05478