Datasheet TDA8575T, TDA8575 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8575

Ground noise isolation amplifier

Preliminary specification
File under Integrated Circuits, IC01

1996 Jul 29

Philips Semiconductors Preliminary specification

Ground noise isolation amplifier TDA8575

FEATURES

• High common mode rejection up to high frequencies

• Reduced dependency of common mode rejection on

source resistance

• Low distortion

• Low noise

• AC and DC short-circuit safe

• Few external components

• ESD protected on all pins.

GENERAL DESCRIPTION

The TDA8575(T) is a two channel amplifier with differential
input and single-ended output for use in car audio
applications. The differential amplifier has a gain of 0 dB,
a low distortion and a high common mode rejection. The
TDA8575T comes in a 16 pin SO package and TDA8575
comes in a 16 pin DIP package.

The TDA8575(T) is developed for those car audio
applications where long connections between signal
sources and amplifiers (or boosters) are necessary and
ground noise has to be eliminated.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

CC

G

v

V

o(rms)(max)

supply voltage 5 8.5 18 V
supply current VCC= 8.5 V − 12.6 15 mA
voltage gain −0.5 0 +0.5 dB

maximum output voltage (RMS value) THD = 0.1% − 1.7 − V
SVRR supply voltage ripple rejection 55 60 − dB
CMRR common mode rejection ratio Rs= 0 Ω − 80 − dB
THD total harmonic distortion V
V

no

noise output voltage − 3.7 5 µV

= 1 V; f = 1 kHz − 0.005 − %

o(rms)

Zi input impedance − 108 − kΩ
Zo output impedance − − 10 Ω

ORDERING INFORMATION

TYPE

NUMBER

TDA8575T SO16

TDA8575 DIP16

NAME DESCRIPTION VERSION

plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
plastic dual in-line package; 16 leads (300 mil); long body SOT38-1

1996 Jul 29 2

PACKAGE

Philips Semiconductors Preliminary specification

Fig.1 Block diagram.

handbook, full pagewidth

MGE829

360 kΩ

16

0.5(VCC − 0.7) + 0.7

0.5(VCC − 0.7) + 0.7

V

CC

V

CC

9

GND

8

SVRR

12

OUTL

11

OUTR

0.68(VCC − 0.7) + 0.7

0.68(VCC − 0.7) + 0.7

REFERENCE

360 kΩ

108

kΩ

108

kΩ

TDA8575(T)

1

5

6

INR+

INR−

7

INL+

INL−

V I

I V

I V

V I

BLOCK DIAGRAM

Ground noise isolation amplifier TDA8575

1996 Jul 29 3

Philips Semiconductors Preliminary specification

Fig.2 Pin configuration TDA8575T.

handbook, halfpage

TDA8575T

MGE828

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

INL+

n.c.
n.c.
n.c.

INL−
INR−
INR+

SVRR

GND

n.c.

OUTR

OUTL

n.c.

n.c.

n.c.

V

CC

handbook, halfpage

TDA8575

MGE827

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

INL+

n.c.
n.c.
n.c.

INL−
INR−
INR+

SVRR

GND

n.c.

OUTR

OUTL

n.c.

n.c.

n.c.

V

CC

Fig.3 Pin configuration TDA8575.

Ground noise isolation amplifier TDA8575

PINNING

SYMBOL PIN DESCRIPTION

INL+ 1 positive input left
n.c. 2 not connected
n.c. 3 not connected
n.c. 4 not connected
INL− 5 negative input left
INR− 6 negative input right
INR+ 7 positive input right
SVRR 8 supply voltage ripple rejection
GND 9 ground
n.c. 10 not connected
OUTR 11 output voltage right channel
OUTL 12 output voltage left channel
n.c. 13 not connected
n.c. 14 not connected
n.c. 15 not connected
V

CC

16 supply voltage

1996 Jul 29 4

Philips Semiconductors Preliminary specification

Ω

2

-------------------

× 22 µF× 20s= =

Fig.4 Conventional system.

handbook, halfpage

MGE830

V

o

V

i

0.5 V

CC

Fig.5 New system using V → I converters.

handbook, halfpage

0.5 V

CC

V

o

V

i

V I

I V

MGE831

Ground noise isolation amplifier TDA8575

FUNCTIONAL DESCRIPTION
System description

To enable a high common mode rejection a new system
setup is used. The voltage to current converter, referred to
as V → I in the block diagram of Fig.1, replaces the
resistors that can be seen in the conventional system
solution.

Both systems are shown in Figs 4 and 5. In the
conventional system the common mode rejection is limited
by the matching properties of the resistors resulting in a
CMRR of 60 dB maximum. Using the new system setup a
CMRR of 80 dB is achieved.

Power on

In Fig.6 the preferred input capacitor values are shown.
If the capacitor C2 = 22 µF connected to the IN- inputs had
to be charged by the 0.5Vcc voltage source a charge time

of would be required.5τ 5

360 k

This is inconvenient for most applications and therefore
the TDA8575(T) is equipped with a quick charge circuit.
On power-on the quick charge circuit charges the
capacitor C2 connected to the IN- pins. The quick charge
circuit consists of a voltage buffer and a control circuit
(referred to as ‘reference and power check’ in Fig.6) that
monitors the supply voltage VCC. If the supply voltage rises
more than ≈ 2 V the voltage buffer is switched on.
After charging C2 the voltage buffer is switched off.
The charge time of C2 will equal the charge time of C4, the
SVRR capacitor.

1996 Jul 29 5

Philips Semiconductors Preliminary specification

handbook, full pagewidth

MGE832

V

CC

9

GND

8

16

SVRR

REFERENCE

AND

POWER CHECK

VOLTAGE

BUFFER

VOLTAGE

BUFFER

switch off

360 kΩ

360 kΩ

108

kΩ

TDA8575(T)

47 µF

C4

1

5

6

INR+

INR−

7

V

i(L)

220 nF

C1

INL+

INL−

22 µF

C2

5 kΩ

R

s

5 kΩ

R

s

V

i(R)

220 nF

C1

V

cm

V I

V I

108

kΩ

switch off

Fig.6 Quick charge circuit.

Ground noise isolation amplifier TDA8575

1996 Jul 29 6

Philips Semiconductors Preliminary specification

Ground noise isolation amplifier TDA8575

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

I

ORM

V

sc

T

stg

T

amb

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

supply voltage operating − 18 V
repetitive peak output current − 40 mA
AC and DC short-circuit safe voltage − 18 V
storage temperature −55 +150 °C
operating ambient temperature −40 +85 °C
junction temperature − +150 °C

thermal resistance from junction to ambient in free air

TDA8575 (DIP16) 75 K/W
TDA8575T (SO16) 110 K/W

QUALITY SPECIFICATION

Quality according to

UZW-BO/FQ-0601

, if this type is used as an audio amplifier.

DC CHARACTERISTICS

V

= 8.5 V; T

CC

= 25 °C; RL= 10 kΩ; in accordance with application circuit (see Fig.9).

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

CC

V

O

supply voltage Vi= 0 V 5 8.5 18 V
supply current − 12.6 15 mA
output voltage note 1 − 4.7 − V

Note

1. The DC output voltage with respect to ground is approximately 0.5VCC.

1996 Jul 29 7

Philips Semiconductors Preliminary specification

Ground noise isolation amplifier TDA8575

AC CHARACTERISTICS

VCC= 8.5 V; f = 1 kHz; Rs= 0 kΩ; RL= 10 kΩ; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

v

α

cs

∆G
f

ro(L)

f

ro(H)

v

voltage gain −0.5 0 +0.5 dB
channel separation Rs= 5 kΩ; note 1 70 80 − dB

 channel unbalance − − 0.5 dB

low frequency roll-off −1 dB; note 2 − − 20 Hz
high frequency roll-off −1 dB 20 − − kHz

Zi input impedance 80 108 123 kΩ
Zo output impedance − − 10 Ω

V

i(rms)(max)

V

no

maximum input voltage (RMS value) THD = 1% − 1.7 − V
noise output voltage unweighted; note 3 − 3.7 5 µV

THD total harmonic distortion V

THD

max

total harmonic distortion at maximum
output current

V

i(cm)(rms)

common-mode input voltage (RMS value) − − 1 V

CMRR common-mode rejection ratio Rs= 5 kΩ 66 80 − dB

SVRR supply voltage ripple rejection Rs= 2 kΩ; note 5 55 − − dB

= 25 °C; in accordance with application circuit (see Fig.9).

amb

= 1 V − 0.005 0.01 %

i(rms)

V

i(rms)

= 1 V;

− 0.01 − %

f = 20 Hz to 20 kHz
V

= 1 V; RL= 150 Ω − − 1 %

i(rms)

Rs= 0 Ω; note 4

− 80 − dB

f = 100 Hz to 20 kHz

Rs= 2 kΩ; note 5

− 60 − dB

f = 20 Hz to 20 kHz

Notes

1. The channel separation is dependent on the capacitor C2 connected to the IN- input. The channel separation for low
frequencies (<1 kHz) can be increased by using a larger capacitance for C2.

2. The frequency response is externally fixed by the input and output coupling capacitors.

3. The noise output voltage is measured in a bandwidth of 20 Hz up to 20 kHz, unweighted.

4. The common mode rejection ratio is measured at the output with a voltage source V
V

i(L)

and V

short-circuited according to Fig.9. The common mode rejection is dependent on the capacitor C2

i(R)

cm(rms)

= 1 V and both

connected to the IN- input. The common mode rejection for low frequencies (<1 kHz) can be increased by using a
larger capacitance for C2.

5. Supply voltage ripple rejection is measured at the output using a ripple amplitude of 2 V (p-p).
The source resistance Rs= 2 kΩ.

1996 Jul 29 8

Philips Semiconductors Preliminary specification

Fig.7 A typical noise problem in car audio systems.

handbook, full pagewidth

Vno+V

i

V

no

V

i

in

MGE833

long cable

speaker

power
amplifier

car body noise

car body car body

tuner
tape
CD

V

CC

V

bat

Fig.8 The TDA8575(T) eliminates noise problems in car audio systems.

handbook, full pagewidth

Vno+V

i

V

no

V

no

V

i

in

MGE834

long cables

Vi+V

no

/ CMRR

speaker

power
amplifier

car body noise

ground noise isolation amplifier

car body car body

+

−

tuner
tape
CD

V

CC

V

CC

V

bat

Ground noise isolation amplifier TDA8575

APPLICATION INFORMATION
General

The TDA8575(T) is a two channel amplifier with differential
input and single-ended output for use in car audio
applications. The differential amplifier has a gain of 0 dB,
a low distortion and a high common mode rejection.

Due to wiring resistance and noise coming from various
electric devices in the automobile, performance loss will
appear in those car audio applications where long
connections between signal sources and amplifiers (or
boosters) are necessary. To solve these problems the
TDA8575(T) is developed (see Figs 7 and 8).

1996 Jul 29 9

Philips Semiconductors Preliminary specification

Fig.9 Application circuit TDA8575(T).

handbook, full pagewidth

MGE835

360 kΩ

16

V

CC

V

CC

VCC = 8.5 V

9

GND

8

SVRR

12

OUTL

11

OUTR

REFERENCE

360 kΩ

108

kΩ

108

kΩ

TDA8575(T)

10 kΩ

R

L

2.2 µF

C3

47 µF

C4

100 nF

C5

10 kΩ

R

L

2.2 µF

C3

1

5

6

INR+

INR−

7

5 kΩ

R

s

V

i(L)

220 nF

C1

INL+

INL−

22 µF

C2

5 kΩ

R

s

V

i(R)

220 nF

C1

V

cm

V I

I V

I V

V I

Ground noise isolation amplifier TDA8575

1996 Jul 29 10

Philips Semiconductors Preliminary specification

Fig.10 Application circuit TDA8575(T) with a balanced signal source.

handbook, full pagewidth

MGE836

360 kΩ

16

V

CC

V

CC

VCC = 8.5 V

9

GND

8

SVRR

12

OUTL

11

OUTR

REFERENCE

360 kΩ

108

kΩ

108

kΩ

TDA8575(T)

10 kΩ

R

L

2.2 µF

C3

47 µF

C4

100 nF

C5

10 kΩ

R

L

2.2 µF

C3

1

5

6

INR+

INR−

7

5 kΩ

R

s

V

i(L)

220 nF

C1

INL+

INL−

10 µF

C2

10 µF

C2

5 kΩ

R

s

V

i(R)

220 nF

C1

V I

I V

I V

V I

V

cm1

V

cm2

Ground noise isolation amplifier TDA8575

1996 Jul 29 11

Philips Semiconductors Preliminary specification

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

8

9

1

16

y

pin 1 index

UNIT

A

max.

A1A2A

3

b

p

c D

(1)E(1) (1)

e H

E

L L

p

Q Zywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

1.75

0.25

0.10

1.45

1.25

0.25

0.49

0.36

0.25

0.19

10.0

9.8

4.0

3.8

1.27

6.2

5.8

0.7

0.6

0.7

0.3

8
0

o
o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.0

0.4

SOT109-1

91-08-13
95-01-23

076E07S MS-012AC

0.069

0.0098

0.0039

0.057

0.049

0.01

0.019

0.014

0.0098

0.0075

0.39

0.38

0.16

0.15

0.050

1.05

0.041

0.24

0.23

0.028

0.020

0.028

0.012

0.01

0.25

0.01 0.004

0.039

0.016

0 2.5 5 mm

scale

SO16: plastic small outline package; 16 leads; body width 3.9 mm

SOT109-1

Ground noise isolation amplifier TDA8575

PACKAGE OUTLINES

1996 Jul 29 12

Philips Semiconductors Preliminary specification

UNIT

A

max.

1 2

b

1

c E e M

H

L

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

SOT38-1

92-10-02
95-01-19

A

min.

A

max.

b

max.

w

M

E

e

1

1.40

1.14

0.055

0.045

0.53

0.38

0.32

0.23

21.8

21.4

0.86

0.84

6.48

6.20

0.26

0.24

3.9

3.4

0.15

0.13

0.2542.54 7.62

0.30

8.25

7.80

0.32

0.31

9.5

8.3

0.37

0.33

2.2

0.087

4.7 0.51 3.7

0.15

0.021

0.015

0.013

0.009

0.010.100.0200.19

050G09 MO-001AE

M

H

c

(e )

1

M

E

A

L

seating plane

A

1

w M

b

1

e

D

A

2

Z

16

1

9

8

b

E

pin 1 index

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

(1) (1)

D

(1)

Z

DIP16: plastic dual in-line package; 16 leads (300 mil); long body

SOT38-1

Ground noise isolation amplifier TDA8575

1996 Jul 29 13

Philips Semiconductors Preliminary specification

Ground noise isolation amplifier TDA8575

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

DIP

SOLDERING BY DIPPING OR BY WAVE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

EPAIRING SOLDERED JOINTS

R
Apply a low voltage soldering iron (less than 24 V) to the

lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

W

AVE SOLDERING

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

1996 Jul 29 14

Philips Semiconductors Preliminary specification

Ground noise isolation amplifier TDA8575

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Jul 29 15

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South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1996 SCA51
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 517021/10/01/pp16 Date of release: 1996 Jul 29 Document order number: 9397 750 00985

Internet: http://www.semiconductors.philips.com

(1) TDA8575_1.mif July 18, 1996 12:44 pm