Datasheet TDA8561Q Datasheet (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
TDA8561Q
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
Product specification Supersedes data of 1997 Sep 22 File under Integrated Circuits, IC01
1999 Jun 30
Page 2
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier

FEATURES

Requires very few external components
High output power
Flexibility in use; Quad single-ended or stereo BTL
Low output offset voltage
Fixed gain
Diagnostic facility (distortion, short-circuit and
temperature detection)
Good ripple rejection
Mode select switch (operating, mute and standby)
Load dump protection
AC and DC short-circuit safe to ground and to V
Low power dissipation in any short-circuit condition
Thermally protected

QUICK REFERENCE DATA

P
TDA8561Q
Reverse polarity safe
Electrostatic discharge protection
No switch-on/switch-off plop
Flexible leads
Low thermal resistance
Identical inputs (inverting and non-inverting).

GENERAL DESCRIPTION

The TDA8561Q is an integrated class-B output amplifier in a 17-lead single-in-line (SIL) power package. It contains 4 × 12 W Single-Ended (SE) or 2 × 24 W Bridge-Tied Load (BTL) amplifiers.
The device is primarily developed for car radio applications.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
P
I
ORM
I
P
I
sb
positive operating supply voltage 6 14.4 18 V repetitive peak output current −−4A total quiescent current 80 mA standby current 0.1 100 µA
Stereo BTL application
P
o
output power RL=4Ω; THD = 10% 24 W RR supply voltage ripple rejection 46 −−dB V
no
Z
input impedance 25 −−k
I
| DC output offset voltage −−150 mV
∆V
O
noise output voltage Rs=0Ω−70 −µV
Quad single-ended application
P
o
output power THD = 10%
R
=4Ω−7W
L
=2Ω−12 W
R
L
RR supply voltage ripple rejection 46 −−dB V
no
Z
input impedance 50 −−k
I
noise output voltage Rs=0Ω−50 −µV

ORDERING INFORMATION

TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
TDA8561Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
1999 Jun 30 2
Page 3
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier

BLOCK DIAGRAM

non-inverting
input 1
inverting
input 2
supply voltage ripple rejection
non-inverting
input 4
1
60 k
2
k
60 k
3
2
k
x1
4
17
60 k
2
k
18 k
18 k
stand-by
switch
VA
15 k
15 k
mute switch
VA
mute switch
VA
V
P
mute switch
VA
C
m
C
m
PROTECTIONS
thermal
short-circuit
mute reference voltage
C
m
power stage
power stage
stand-by reference voltage
mute switch
V
P1
5
13
TDA8561Q
TDA8561Q
V
P2
6
output 1
8
output 2
mode
14
select
switch
16
diagnostic
output
12
output 4
18 k
mute switch
60 k
inverting
input 3
15
2
k
input reference voltage
2711
ground (signal)
VA
18 k
9
not connected
Fig.1 Block diagram.
1999 Jun 30 3
C
m
GND1 GND2
power ground (substrate)
power stage
power stage
MEA858 - 1
10
output 3
Page 4
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier

PINNING

SYMBOL PIN DESCRIPTION
INV 1 1 non-inverting input 1 GND(S) 2 signal ground INV 2 3 inverting input 2 RR 4 supply voltage ripple rejection V
P1
OUT 1 6 output1 GND1 7 power ground 1 OUT 2 8 output2 n.c. 9 not connected OUT 3 10 output 3 GND2 11 power ground 2 OUT 4 12 output 4 V
P2
MODE 14 mode select switch input INV 3 15 inverting input 3 V
DIAG
INV 4 17 non-inverting input 4
5 supply voltage
13 supply voltage
16 diagnostic output
INV 1
GND(S)
INV 2
RR
V
P1
OUT 1
GND1
OUT 2
n.c.
OUT 3
GND2
OUT 4
V
P2
MODE
INV 3
V
DIAG INV 4
1 2 3 4 5 6 7 8
9 10 11 12
13 14 15 16
17
TDA8561Q
TDA8561Q
MEA859 - 1
Fig.2 Pin configuration.
1999 Jun 30 4
Page 5
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier

FUNCTIONAL DESCRIPTION

The TDA8561Q contains four identical amplifiers and can be used for Single-Ended (SE) or Bridge-Tied Load (BTL) applications. The gain of each amplifier is fixed at 20 dB (26 dB in BTL). Special features of the device are:

Mode select switch (pin 14)

Low standby current (<100 µA)
Low switching current (low cost supply switch)
Mute facility.
To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during 100 ms (charging of the input capacitors at pins 1, 3, 15 and 17). This can be achieved by:
Microcontroller control
External timing circuit (see Fig.11).

Diagnostic output (pin 16)

TDA8561Q
During this short-circuit condition, pin 16 is LOW for 20 ms and HIGH for 50 µs (see Fig.5).
The power dissipation in any short-circuit condition is very low.
handbook, halfpage
V
O
0
V
16
V
P
0
MGA705
t
D
YNAMIC DISTORTION DETECTOR (DDD)
At the onset of clipping of one or more output stages, the dynamic distortion detector becomes active and pin 16 goes LOW. This information can be used to drive a sound processor or DC volume control to attenuate the input signal and thus limit the distortion. The output level of pin 16 is independent of the number of channels that are clipping (see Figs 3 and 4).
S
HORT-CIRCUIT PROTECTION
When a short-circuit occurs at one or more outputs to ground or to the supply voltage, the output stages are switched off until the short-circuit is removed and the device is switched on again, with a delay of approximately 20 ms, after removal of the short-circuit. During this short-circuit condition, pin 16 is continuously LOW.
When a short-circuit across the load of one or both channels occurs the output stages are switched off for approximately 20 ms. After that time it is checked during approximately 50 µs to see whether the short-circuit is still present. Due to this duty cycle of 50 µs/20 ms the average current consumption during this short-circuit condition is very low (approximately 40 mA).
Fig.3 Distortion detector waveform; BTL
application.
handbook, halfpage
V
O
0
V
16
V
P
0
MGA706
t
Fig.4 Distortion detector waveform; single-ended
application.
1999 Jun 30 5
Page 6
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
handbook, full pagewidth
TEMPERATURE DETECTION
current
in
output
stage
V
16
short-circuit over the load
V
P
Fig.5 Short-circuit waveform.
TDA8561Q
MGL214
t
20 ms
t
50 µs
When the virtual junction temperature Tvjreaches 150 °C, pin 16 will be active LOW.
O
PEN-COLLECTOR OUTPUT
Pin 16 is an open-collector output, which allows pin 16 of more devices being tied together.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
v
P
positive supply voltage
operating 18 V non-operating 30 V
2.5 ms 45 V
r
I
OSM
I
ORM
T
stg
T
amb
T
vj
V
psc
V
pr
P
tot
load dump protection during 50 ms; t non-repetitive peak output current 6A repetitive peak output current 4A storage temperature 55 +150 °C operating ambient temperature 40 +85 °C virtual junction temperature 150 °C AC and DC short-circuit safe voltage 18 V reverse polarity 6V total power dissipation 60 W
1999 Jun 30 6
Page 7
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier

THERMAL CHARACTERISTICS

In accordance with IEC 747-1.
SYMBOL PARAMETER VALUE UNIT
R
th j-a
R
th j-c
handbook, halfpage
thermal resistance from junction to ambient in free air 40 K/W thermal resistance from junction to case (see Figs 6 and 7) 1.3 K/W
virtual junction
output 3 output 4
3.0 K/W
3.0 K/W
0.7 K/W
virtual junction
2.2 K/W
handbook, halfpage
output 1 output 2
output 1 output 2
3.0 K/W
2.2 K/W
0.7 K/W
3.0 K/W
0.2 K/W
case
MEA861 - 1
Fig.6 Equivalent thermal resistance network;
BTL application.
MEA860 - 2
0.2 K/W
case
Fig.7 Equivalent thermal resistance network;
single-ended application.
1999 Jun 30 7
Page 8
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier

DC CHARACTERISTICS

V
= 14.4 V; T
P
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
P
I
P
V
O
DC output offset voltage −−150 mV
∆V
O
Mode select switch
V
on
MUTE CONDITION V
mute
V
O
∆V
DC output offset voltage (between
O
STANDBY CONDITION V
sb
I
sb
I
sw
Diagnostic output (pin 16)
V
DIAG
=25°C; measured in Fig.8; unless otherwise specified.
amb
positive supply voltage note 1 6 14.4 18 V total quiescent current 80 160 mA DC output voltage note 2 6.9 V
switch-on voltage level 8.5 −−V
mute voltage 3.3 6.4 V output voltage in mute position V
= 1 V; f = 1 kHz −−2mV
Imax
−−150 mV
pins 6 to 8 and 10 to 12)
standby voltage 0 2V standby current −−100 µA switch-on current 12 40 µA
diagnostic output voltage any short-circuit or clipping −−0.6 V
Notes
1. The circuit is DC adjusted at V
= 6 to 18 V and AC operating at VP= 8.5 to 18 V.
P
2. At 18V<VP< 30 V the DC output voltage 0.5VP.
1999 Jun 30 8
Page 9
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier

AC CHARACTERISTICS

V
= 14.4 V; RL=4Ω; f = 1 kHz; T
P
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Stereo BTL application (measured in Fig.8)
P
o
output power note 1
THD total harmonic distortion P P
o
output power VP= 13.2 V
B power bandwidth THD = 0.5%; 20 to Hz
f
l
f
h
G
v
low frequency roll-off at 1 dB; note 2 45 Hz high frequency roll-off at 1dB 20 −−kHz closed loop voltage gain 25 26 27 dB
SVRR supply voltage ripple rejection note 3
on 48 −−dB mute 46 −−dB standby 80 −−dB
Z
input impedance 25 30 38 k
I
V
no
noise output voltage
on R on R mute notes 4 and 5 60 −µV
α
cs
∆G
channel unbalance −−1dB
v
channel separation Rs=10k 40 60 dB
DYNAMIC DISTORTION DETECTOR THD total harmonic distortion V16≤ 0.6 V; no short-circuit 10 %
=25°C; unless otherwise specified.
amb
THD = 0.5% 15 19 W THD = 10% 20 24 W
=1W 0.06 %
o
THD = 0.5% 16 W THD = 10% 20 W
P
= 1 dB; with respect to 15 W 15000
o
=0Ω; note 4 70 −µV
s
=10kΩ; note 4 100 200 µV
s
Quad single-ended application (measured in Fig.9) P
o
output power note 1
THD = 0.5% 4 5 W
THD = 10% 5.5 7 W THD total harmonic distortion P P
O
output power RL=2Ω; note 1
=1W 0.06 %
o
THD = 0.5% 7.5 10 W
THD = 10% 10 12 W f
l
f
h
G
v
low frequency roll-off at 1 dB; note 2 25 Hz high frequency roll-off at 1dB 20 −−kHz closed loop voltage gain 19 20 21 dB
1999 Jun 30 9
Page 10
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
SVRR supply voltage ripple rejection note 3
on 48 −−dB mute 46 −−dB standby 80 −−dB
Z
input impedance 50 60 75 k
I
V
no
αcschannel separation Rs=10kΩ 40 60 dB ∆G
channel unbalance −−1dB
v
DYNAMIC DISTORTION DETECTOR THD total harmonic distortion V16≤ 0.6 V; no short-circuit 10 %
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 , maximum ripple amplitude of 2 V (p-p) and at a frequency of between 100 Hz and 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of Rs (Vi= 0 V).
noise output voltage
on R on R mute notes 4 and 5 50 −µV
=0Ω; note 4 50 −µV
s
=10kΩ; note 4 70 100 µV
s
1999 Jun 30 10
Page 11
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier

TEST AND APPLICATION INFORMATION

handbook, full pagewidth
non- inverting
input 1
220 nF
mode
switch
1
diagnostic
14
TDA8561Q TDA8564Q
60 k
10 k
16 5 13
TDA8561Q
V
P
100
nF
6
2200
µF
inverting input 2 ground (signal)
supply voltage ripple rejection
non-inverting
input 4
inverting input 3
220 nF
12
10
MEA862 - 2
8
9
not connected
3 2
4
17
15
60 k
60 k
power ground (substrate)
reference
voltage
60
k
711
Fig.8 Stereo BTL application diagram.
1999 Jun 30 11
Page 12
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
handbook, full pagewidth
non- inverting
input 1
220 nF
mode
switch
1
14
TDA8561Q TDA8564Q
60 k
10
k
16 5 13
TDA8561Q
V
P
100
nF
6
2200
µF
1000 µF
inverting
input 2
ground (signal)
supply voltage ripple rejection
non-inverting
input 4
inverting
input 3
220 nF
220 nF
220 nF
100
µF
3 2
4
1/2V
17
15
8
1000 µF
60 k
p
60 k
power ground (substrate)
reference
voltage
60
k
711
9
12
10
MEA863 - 2
not connected
1000 µF
1000 µF
Fig.9 Quad single-ended application diagram 1.
1999 Jun 30 12
Page 13
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
handbook, full pagewidth
non- inverting
input 1
inverting
input 2
ground (signal)
not connected
non-inverting
input 4
220 nF
220 nF
220 nF
mode
switch
1
3 2
9
17
14
TDA8561Q TDA8564Q
60 k
60 k
10 k
16 5 13
reference
voltage
60 k
TDA8561Q
V
P
P
100
µF
2200
µF
D1
100
nF
6
8
V
2
4
12
60 k
inverting
input 3
(1) When short-circuiting the single-ended capacitor, the dissipation will be reduced due to diode D1.
220 nF
15
711
power ground (substrate)
10
MEA864 - 2
Fig.10 Quad single-ended application diagram 2.
2200
µF
1999 Jun 30 13
Page 14
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier

Mode select switch

To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during >100 ms (charging of the input capacitors at pins 1, 3, 15 and 17.
The circuit in Fig.11 slowly ramps up the voltage at the mode select switch pin when switching on and results in fast muting when switching off.
handbook, halfpage
V
P
10 k 100
47 µF
TDA8561Q
mode select
switch
100 k
MGA708
2
10
THD
(%)
10
1
1
10
2
10
2
10
(1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz.
Fig.11 Mode select switch circuitry.
MGA709
(1)
(2)
(3)
1
10110
P (W)
o
2
10
Fig.12 Total harmonic distortion as a function of output power; VP= 14.4 V, RL=4Ω.
1999 Jun 30 14
Page 15
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
50
handbook, full pagewidth
P
o
(W)
40
30
20
10
0
810121416
(1) THD = 30%. (2) THD = 10%. (3) THD = 0.5%.
(1)
(2)
(3)
TDA8561Q
MGA710
V (V)
P
18
P
(W)
Fig.13 Output power as a function of supply voltage.
20
o
18
16
14
12
10
10
2
10
3
10
4
10
f (Hz)
MGA711
5
10
Fig.14 Power bandwidth as a function of frequency; THD = 0.5%, VP= 14.4 V, RL=4Ω.
1999 Jun 30 15
Page 16
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
1
THD
(%)
1
10
2
10
10
(1) Po= 0.1 W. (2) Po=1W. (3) Po=10W.
2
10
10
TDA8561Q
MGA712
(1)
(2)
(3)
3
4
10
f (Hz)
5
10
Fig.15 Total harmonic distortion as a function of frequency; VP= 14.4 V, RL=4Ω.
50
RR
(dB)
60
70
80
90
100
10
(1) On condition. (2) Mute condition. (3) Standby condition.
MGA713
(1)
(2)
(3)
2
10
3
10
4
10
f (Hz)
5
10
Fig.16 Ripple rejection as a function of frequency.
1999 Jun 30 16
Page 17
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
100
handbook, full pagewidth
I
q
(mA)
92
84
76
68
60
8 10121416
TDA8561Q
MGA714
V (V)
P
18
Fig.17 Quiescent current as a function of supply voltage; RL= ∞.

SINGLE-ENDED APPLICATION

2
10
THD
(%)
10
1
1
10
2
10
2
10
MGA715
(1)
(2)
(3)
1
10110
P (W)
o
2
10
(1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz.
Fig.18 Total harmonic distortion as a function of output power; VP= 14.4 V, RL=2Ω.
1999 Jun 30 17
Page 18
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
15
handbook, full pagewidth
P
o
(W)
12
9
6
3
0
8 10121416
(1) THD = 30%. (2) THD = 10%. (3) THD = 0.5%.
(2)
(1)
(3)
TDA8561Q
MGA716
V (V)
P
18
P
(W)
Fig.19 Output power as a function of supply voltage.
10
o
8
6
4
2
0
10
2
10
3
10
4
10
f (Hz)
MGA717
5
10
Fig.20 Power bandwidth as a function of frequency; THD = 0.5%, VP= 14.4 V, RL=2Ω.
1999 Jun 30 18
Page 19
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
1
THD
(%)
1
10
2
10
10
2
10
10
TDA8561Q
MGA718
(1)
(2)
3
4
10
f (Hz)
5
10
(1) Po= 0.1 W. (2) Po=1W.
30
handbook, full pagewidth
α
cs
(dB)
40
50
60
70
Fig.21 Total harmonic distortion as a function of frequency; VP= 14.4 V, RL=2Ω.
MGA719
80
10
2
10
10
Fig.22 Channel separation as a function of frequency.
1999 Jun 30 19
3
4
10
f (Hz)
5
10
Page 20
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier

BTL APPLICATION

14
P
tot
(W)
12
10
8
6
4
TDA8561Q
MGA720
2
04
8 1216202428
P (W)
o
Fig.23 Total power dissipation as a function of output power; VP= 14.4 V, RL=4(1 channel driven BTL or
4 channels in single-ended mode).
1999 Jun 30 20
Page 21
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier

PACKAGE OUTLINE

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
non-concave
D
d
x
E
h
D
h
view B: mounting base side
A
2
TDA8561Q

SOT243-1

117
e
0.48
0.38
1
e
(1)
deD
24.0
20.0
23.6
19.6
Z
DIMENSIONS (mm are the original dimensions)
UNIT A e
mm
A2bpcD
17.0
4.6
4.2
0.75
0.60
15.5
w M
b
p
(1)
E
h
12.2
10 2.54
11.8
0 5 10 mm
B
j
L
3
1.27
scale
1
e
5.08
L
E
2
h
6
Q
LL3m
3.4
12.4
3.1
11.0
2.4
1.6
e
4.3
m
E
A
c
2
Qj
2.1
1.8
v M
v
0.8
x
0.4w0.03
(1)
Z
2.00
1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE VERSION
SOT243-1
IEC JEDEC EIAJ
REFERENCES
1999 Jun 30 21
EUROPEAN
PROJECTION
ISSUE DATE
95-03-11 97-12-16
Page 22
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
SOLDERING Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our
Packages”
Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
DBS, DIP, HDIP, SDIP, SIL suitable suitable
“Data Handbook IC26; Integrated Circuit
(document order number 9398 652 90011).
PACKAGE
The total contact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
SOLDERING METHOD
DIPPING WAVE
(1)
TDA8561Q
). If the
stg(max)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

DEFINITIONS

Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jun 30 22
Page 23
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier
NOTES
TDA8561Q
1999 Jun 30 23
Page 24
Philips Semiconductors – a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands Brazil: seeSouth America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,
51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: seeAustria India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
1999 66
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 545002/04/pp24 Date of release: 1999 Jun 30 Document order number: 9397 750 06053
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