Datasheet TDA8559T-N1 Datasheet (Philips)

Page 1
DATA SH EET
Product specification Supersedes data of 1996 Jan 02 File under Integrated Circuits, IC01
1997 Jun 27
INTEGRATED CIRCUITS
TDA8559
Page 2
1997 Jun 27 2
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
FEA TURES
Operating voltage from 1.9 to 30 V
Very low quiescent current
Low distortion
Few external components
Differential inputs
Usable as a mono amplifier in Bridge-Tied Load (BTL) or
stereo Single-Ended (SE)
Single-ended mode without loudspeaker capacitor
Mute and standby mode
Short-circuit proof to ground, to supply voltage (<10 V)
and across load
No switch on or switch off clicks
ESD protected on all pins.
APPLICATIONS
Portable telephones
Walk-mans
Portable audio
Mains fed equipment.
GENERAL DESCRIPTION
The TDA8559 is a stereo amplifier that operates over a wide supply voltage range from 1.9 to 30 V and consumes a very low quiescent current. This makes it suitable for battery fed applications (2 × 1.5 V cells). Because of an internal voltage buffer, this device can be used with or without a capacitor connected in series with the load. It can be applied as a headphone amplifier, but also as a mono amplifier with a small speaker (25 ), or as a line driver in mains applications.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
V
P
operating supply voltage 1.9 3 30 V
I
q(tot)
total quiescent current 2.75 4 mA
I
stb
standby supply current −−10 µA
Stereo application
P
o
output power THD = 10% 30 35 mW
THD total harmonic distortion P
o
=20mW; fi= 1 kHz 0.075 0.15 %
P
o
=20mW; fi= 10 kHz 0.1 %
G
v
voltage gain 25 26 27 dB
f
ss
small signal roll-off frequency 1dB 750 kHz
BTL application
P
o
output power THD = 10% 125 140 mW
THD total harmonic distortion P
o
=70mW; fi= 1 kHz 0.05 0.1 %
P
o
=70mW; fi= 10 kHz 0.2 %
G
v
voltage gain 31 32 33 dB
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
TDA8559 DIP16 plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 TDA8559T SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
Page 3
1997 Jun 27 3
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
+
+
+
+
OA
INPUT
LOGIC
V/I
REFERENCE
V/I
1
STANDBY
+IN1
IN1
+IN2
IN2
MUTE
MODE
SVRR
n.c. GND
2 3
5 6
4
12
BUFFER
OUT2
OUT1
MGD115
11
14
1615
139,10
7 8
V
P
V
P
V
P1
V
P2
BUFFER
OA
50 k
100 k
100 k
50 k
50 k
50 k
50 k
50
k
TDA8559
DQC
Page 4
1997 Jun 27 4
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
PINNING
SYMBOL PIN DESCRIPTION
STANDBY 1 standby select +IN1 2 non-inverting input 1
IN1 3 inverting input 1 SVRR 4 supply voltage ripple rejection +IN2 5 non-inverting input 2
IN2 6 inverting input 2 MUTE 7 mute select MODE 8 input mode select n.c. 9 not connected n.c. 10 not connected OUT2 11 output 2 BUFFER 12 buffer output (0.5V
P
) GND 13 ground OUT1 14 output 1 V
P2
15 high supply voltage
V
P1
16 low supply voltage
Fig.2 Pin configuration.
handbook, halfpage
TDA8559
MGD114
1 2 3 4 5 6 7 8
STANDBY
+IN1
IN1
SVRR
+IN2
IN2
MUTE
MODE
V
P2
V
P1
OUT1 GND BUFFER OUT2 n.c. n.c.
16 15 14 13 12 11 10
9
FUNCTIONAL DESCRIPTION
The TDA8559 contains two amplifiers with differential inputs, a 0.5VP output buffer and a high supply voltage stabilizer. Each amplifier consists of a voltage-to-current converter (V/I), an output amplifier and a common dynamic quiescent current controller. The gain of each amplifier is internally fixed at 26 dB (= 20 ×). The 0.5VP output can be used as a replacement for the single-ended capacitors. The two amplifiers can also be used as a mono amplifier in a BTL configuration thereby resulting in more output power.
With three mode select pins, the device can be switched into the following modes:
1. Standby mode (I
P
<10µA)
2. Mute mode
3. Operation mode, with two input selections (the input source is directly connected or connected via coupling capacitors at the input).
The ripple rejection in the stereo application with a single-ended capacitor can be improved by connecting a capacitor between the 0.5VP capacitor pin and ground.
The device is fully protected against short-circuiting of the output pins to ground, to the low supply voltage pin and across the load.
V/I converters
The V/I converters have a transconductance of 400 µS. The inputs are completely symmetrical and the two amplifiers can be used in opposite phase. The mute mode causes the V/I converters to block the input signal. The input mode pin selects two applications in which the V/I converters can be used.
The first application (input mode pin floating) is used with a supply voltage below 6 V. The input DC level is at ground level (the unused input pin connected to ground) and no input coupling capacitors are necessary. The maximum converter output current is sufficient to obtain an output swing of 3 V (peak).
In the second application with a supply voltage greater than 6 V (input mode pin HIGH), the input mode pin is connected to VP. In this configuration (input DC level = 0.5VP+ 0.6 V) the input source must be coupled with a capacitor and the two unused input pins must be connected via a capacitor to ground, to improve noise performance. This application has a higher quiescent current, because the maximum output current of the V/I converter is higher to obtain an output voltage swing of 9 V (peak).
Page 5
1997 Jun 27 5
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Output amplifiers
The output amplifiers have a transresistance of 50 k, a bandwidth of approximately 750 kHz and a maximum output current of 100 mA. The mid-tap output voltage equals the voltage applied at the non-inverting pin of the output amplifier. This pin is connected to the output of the
0.5VP buffer. This reduces the distortion when the load is
connected between an output amplifier and the buffer (because feedback is applied over the load).
Buffer
The buffer delivers 0.5V
P
to the output with a maximum
output (sink and source) current of 200 mA (peak).
Dynamic quiescent controller
The Dynamic Quiescent Current controller (DQC) gives the advantage of low quiescent current and low distortion. When there are high frequencies in the output signal, the DQC will increase the quiescent current of the two output amplifiers and the buffer. This will reduce the cross-over distortion that normally occurs at high frequencies and low quiescent current. The DQC gives output currents that are linear with the amplitude and the frequency of the output signals. These currents control the quiescent current.
Stabilizer
The TDA8559 has a voltage supply range from
1.9 to 30 V. This range is divided over two supply voltage pins. Pin 16 is 1.9 to 18 V (breakdown voltage of the process); this pin is preferred for supply voltages less than 18 V. Pin 15 is used for applications where V
P
is approximately 6 to 30 V. The stabilizer output is internally connected to the supply voltage pin 16. In the range from 6 to 18 V, the voltage drop to pin 16 is 1 V. In the range from 18 to 30 V the stabilizer output voltage (to pin 16) is approximately 17 V.
Input logic
The MUTE pin (pin 7) selects the mute mode of the V/I converters. LOW (TTL/CMOS) level is mute. A voltage between 0.5 V (low level) and 1.5 V (high level) causes a soft mute to operate (no plops). When pin 7 is floating or greater than 1.5 V it is in the operating condition.
The input mode pin must be connected to V
P
when the supply voltage is greater than 6 V. The input mode logic raises the tail current of the V/I converters and enables the two buffers to bias the inputs of the V/I converters.
Reference
This circuit supplies all currents needed in this device. With the standby mode pin 1 (TTL/CMOS), it is possible to switch to the standby mode and reduce the total quiescent current to below 10 µA.
Page 6
1997 Jun 27 6
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
QUALITY SPECIFICATION
Quality in accordance with
“SNW-FQ-611E
”, if this type is used as an audio amplifier. The number of the quality
specification can be found in the
“Quality Reference handbook”
. The handbook can be ordered using the code
9397 750 00192.
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
P
=3V; T
amb
=25°C; fi= 1 kHz; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P2(max)
maximum supply voltage (pin 15) 30 V
V
P1(max)
maximum supply voltage (pin 16) 18 V
V
i(max)
maximum input voltage 18 V
I
ORM
peak output current repetitive 150 mA
P
tot
total power dissipation SO16 1.19 W
DIP16 2.4 W
T
amb
operating ambient temperature 40 +85 °C
T
stg
storage temperature 55 +150 °C
T
vj
virtual junction temperature 150 °C
t
sc
short-circuiting time VP<10V 1 hour
SYMBOL DESCRIPTION VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air
DIP16 52 K/W SO16 105 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC characteristics
V
P
operating supply voltage note 1 1.9 3 30 V
I
q(tot)
total quiescent current open load 2.75 4 mA
I
stb
standby supply current open load −−10 µA
V
1
standby mode voltage standby 0 0.5 V
operating 1.5 18 V
V
7
mute mode voltage mute 0 0.5 V
operating 1.5 18 V
I
bias
input bias current 100 300 nA
Page 7
1997 Jun 27 7
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Notes
1. The supply voltage range at pin VP1 is from 1.9 to 18 V. Pin VP2 is used for the voltage range from 6 to 30 V.
2. Measured with low-pass filter 30 kHz.
3. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz, unweighted. Rs=5kΩ.
4. RMS output voltage in mute is measured with Vi= 200 mV (RMS); f = 1 kHz.
5. DC output offset voltage is measured between the signal output and the 0.5VP output.
6. The ripple rejection is measured with a ripple voltage of 200 mV (RMS) applied to the positive supply rail (Rs=0kΩ).
7. DC output offset voltage is measured between the two signal outputs.
Single-ended stereo application (R
L
=32Ω)
P
o
output power THD = 10% 30 35 mW
THD total harmonic distortion P
o
=20mW; fi= 1 kHz; note 2 0.075 0.15 %
P
o
=20mW; fi= 10 kHz; note 2 0.1 %
G
v
voltage gain 25 26 27 dB
f
ss
small signal roll-off frequency 1dB 750 kHz
α
cs
channel separation Rs=5k 40 −−dB
∆G
v
channel unbalance −−1dB
V
no
noise output voltage note 3 70 85 µV
V
no(mute)
noise output voltage in mute note 3 20 30 µV
V
o(mute)
output voltage in mute note 4 −−30 µV
V
mt
mid-tap voltage 1.4 1.5 1.6 V
Z
i
input impedance 75 100 125 k
V
os
DC output offset voltage note 5 −−100 mV
SVRR supply voltage ripple rejection note 6 45 55 dB
BTL application (R
L
=25Ω)
P
o
output power THD = 10% 125 140 mW
THD total harmonic distortion P
o
=70mW; fi= 1 kHz; note 0.05 0.1 %
P
o
=70mW; fi= 10 kHz; note 2 0.1 %
G
v
voltage gain 31 32 33 dB
f
ss
small signal roll-off frequency 1dB 750 kHz
V
no
noise output voltage note 3 100 120 µV
V
no(mute)
noise output voltage in mute note 3 25 40 µV
V
o(mute)
output voltage in mute note 4 −−40 µV
V
os
DC output offset voltage note 7 −−150 mv SVRR supply voltage ripple rejection note 6 39 49 dB Z
i
input impedance 39 50 61 k
Line driver application (R
L
1kΩ)
V
o
line output voltage 0.1 2.9 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Page 8
1997 Jun 27 8
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
APPLICATION INFORMATION General
For applications with a maximum supply voltage of 6 V (input mode LOW) the input pins need a DC path to ground (see Figs 3 and 4). For applications with supply voltages in the range from 6 to 18 V (input mode HIGH) the input DC level is 0.5V
P
+ 0.6 V. In this situation the input
configurations illustrated in Figs 5 and 6 have to be used. The capacitor Cb is recommended for stability
improvement. The value may vary between 10 and 100 nF. This capacitor should be placed close to the IC between pin 12 and pin 13.
Heatsink design
The standard application is stereo headphone single-ended with a 32 load impedance to buffer (see Fig.9). The headphone amplifier can deliver a peak output current of 150 mA into the load.
For the DIP16 envelope R
th j-amb
= 52 K/W; the maximum
sine wave power dissipation for T
amb
=25°C is:
For T
amb
=60°C the maximum total power dissipation is:
For the SO16 envelope R
th j-amb
= 105 K/W; the maximum
sinewave power dissipation for T
amb
=25°C is:
For T
amb
=60°C the maximum total power dissipation is:
2.4 W
150 25
52
----------------------
=
1.7 W
150 60
52
----------------------
=
1.2 W
150 25
105
----------------------
=
0.85 W
150 60
105
----------------------
=
Test conditions
T
amb
=25°C; unless otherwise specified: VP=3V, f = 1 kHz, RL=32Ω, Gain = 26 dB, low input mode, band-pass filter: 22 Hz to 30 kHz. The total harmonic distortion as a function of frequency was measured with low-pass filter of 80 kHz. The quiescent current has been measured without any load impedance.
In applications with coupling capacitors towards the load, an electrolytic capacitor has to be connected to pin 4 (SVRR).
The graphs for the single-ended application have been
measured with the application illustrated in Fig.9; input configuration for input mode low (Fig.4) and input configuration for input mode high (Fig.6).
The graphs for the BTL application ‘input mode low’
have been measured with the application circuit illustrated in Fig.11 and the input configuration illustrated in Fig.4.
The graphs for the line-driver application have been
measured with the application circuit illustrated in Fig.13 and the input configuration illustrated in Fig.6; input mode high.
Input configurations
The IC can be applied in two ways, ‘input mode low’ and ‘input mode high’. This can be selected by the input mode at pin 8:
1. Input mode low: pin 8 floating:
The DC level of the input pins has to be between 0 V and (V
P
1.8 V). A DC path to ground is needed.
The maximum output voltage is approximately
2.1 V (RMS). Input configurations illustrated in Figs 3 and 4 should be used.
2. Input mode high: pin 8 is connected to VP:
This mode is intended for supply voltages >6 V. It can deliver a maximum output voltage of approximately 6 V (RMS) at THD = 0.5%. The DC voltage level of the input pins is (0.5VP+ 0.6 V). Coupling capacitors are necessary. Input configurations illustrated in Figs 5 and 6 should be used.
Page 9
1997 Jun 27 9
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.3 Input configuration; with input capacitor
(VP< 6 V).
2.2 µF
V
IN
MGD123
5 k INPUT
pins 2 and 5
pins 3 and 6
Fig.4 Input configuration; without input capacitor
(VP< 6 V).
handbook, halfpage
V
IN
MGD124
INPUT
pins 2 and 5
pins 3 and 6
Fig.5 Input configuration (VP> 6 V).
220 nF
V
IN
MGD125
220 nF
INPUT
pins 2 and 5
pins 3 and 6
Fig.6 Input configuration (at VP> 6 V, combined
negative inputs).
220
nF
100 nF
100 nF
V
IN
V
IN
MGD126
pin 2
pin 3
pin 6
pin 5
Fig.7 Soft mute.
V
P
7
mute
620 k
47 k
220 nF
MGL135
Standby/mute
The standby mode (V1< 0.5 V) is intended for power
saving purpose. Then the total quiescent current is <10 µA.
To avoid ‘pop-noise’ during switch-on or switch-off the
IC can be muted (V7< 0.5 V). This can be achieved by a ‘soft-mute’ circuit or by direct control from a microcontroller.
Page 10
1997 Jun 27 10
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Application 1: SE with loudspeaker capacitor
(see Fig.8) The value of capacitor Cr influences the behaviour of the
Supply Voltage Ripple Rejection (SVRR) at low frequencies; increasing the value of Cr increases the performance of the SVRR.
Application 2: SE to buffer (without loudspeaker capacitor) (see Fig.9)
This is the basic headphone application. The advantage of this application with respect to application 1, is that it needs only one external component (Cb) in the event of stability problems.
Application 3: Improved SE to buffer (without loudspeaker capacitor) (see Fig.10)
This application is an improved configuration of application 2. The distinction between the two is connecting the loads in opposite phase. This lowers the average current through the SE buffer. It should be noted that a headphone cannot be used because the load requires floating terminals.
Application 4: Bridge tied load mono amplifier
(see Fig.11) This configuration delivers four times the output power of
the SE application with the same supply and load conditions. The capacitor Cr is not required.
Application 5: Line driver application 1.9 V < V
P
<6V
(see Fig.12) The TDA8559 delivers a virtual rail-to-rail output voltage
and is also usable in a low voltage environment, as a line driver. In this application the input needs a DC path to ground, input configurations illustrated in Figs 3 and 4 should be used. The value of capacitor Cr influences the behaviour of the SVRR at low frequencies; increasing the value of Cr increases the performance of the SVRR.
Application 6: Line driver application 6 V < V
P
<18V
(see Fig.13) The TDA8559T delivers a virtual rail-to-rail output voltage.
Because the input mode has to be high, the input configurations illustrated in Figs 5 and 6 should be used. This application can also be used for headphone application, however, due to the limited output current and the limited output power at the headphone, series resistors have to be used between the output pins and the load.
The value of capacitor Cr influences the behaviour of the SVRR at low frequencies; increasing the value of Cr increases the performance of the SVRR.
Application 7: Line driver application 6V < V
P
<30V
(see Fig.14) With the supply voltage connected to pin 15 it is possible
to use the head amplifier above the maximum of 18 V to pin 16. The internal supply voltage will be reduced to a maximum of approximately 17 V.
This will be convenient in applications where the supply voltage is higher than 18 V, however an output voltage swing that reaches the higher supply voltage is not required. the input configurations illustrated in Figs 5 and 6 should be used. This application can also be used for headphone applications. However, due to the limited output current, series resistors have to be used between the output pins and the load.
Page 11
1997 Jun 27 11
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.8 Application 1: single-ended with loudspeaker capacitor.
handbook, full pagewidth
+
+
+
+
OA
INPUT LOGIC
V/I
REFERENCE
V/I
1
STANDBY
MUTE
MODE
SVRR
GND
2 3
5 6
4
12
Cb
BUFFER
OUT2
OUT1
IN1
IN2
MGD116
11
14
1615
13
7 8
V
P
V
P
V
P1
V
P2
BUFFER
OA
50 k
100 k
100 k
50 k
50 k
50 k
50 k
50
k
TDA8559
DQC
100 µF
220 µF
220 µF
100 nF
+V
P
32
32
+−
+−
22 µF
Cr
Page 12
1997 Jun 27 12
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.9 Application 2: single-ended to buffer (without loudspeaker capacitor).
handbook, full pagewidth
+
+
+
+
OA
INPUT LOGIC
V/I
REFERENCE
V/I
1
STANDBY
MUTE
MODE
SVRR
GND
2 3
5 6
4
12
Cb
BUFFER
OUT2
OUT1
IN1
IN2
MGD117
11
14
1615
13
7 8
V
P
V
P
V
P1
V
P2
BUFFER
OA
50 k
100 k
100 k
50 k
50 k
50 k
50 k
50 k
TDA8559
DQC
100 µF
100 nF
+V
P
32
32
+−
+−
Page 13
1997 Jun 27 13
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.10 Application 3: Improved single-ended to buffer (without loudspeaker capacitor).
handbook, full pagewidth
+
+
+
+
OA
INPUT
LOGIC
V/I
REFERENCE
V/I
1
STANDBY
MUTE
MODE
SVRR
GND
2 3
5 6
4
12
Cb
BUFFER
OUT2
OUT1
IN1
IN2
MGD118
11
14
1615
13
7 8
V
P
V
P
V
P1
V
P2
BUFFER
OA
50 k
100 k
100 k
50 k
50 k
50 k
50 k
50
k
TDA8559
DQC
+
100 µF
100 nF
+V
P
32
32
+−
Page 14
1997 Jun 27 14
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.11 Application 4: BTL mono amplifier.
handbook, full pagewidth
+
+
+
+
OA
INPUT LOGIC
V/I
REFERENCE
V/I
1
STANDBY
MUTE
MODE
SVRR
GND
2 3
5 6
4
12
Cb
BUFFER
OUT2
OUT1
IN1
IN2
MGD119
11
14
1615
13
7 8
V
P
V
P
V
P1
V
P2
BUFFER
OA
50 k
100 k
100 k
50 k
50 k
50 k
50 k
50
k
TDA8559
DQC
100 µF
100 nF
+V
P
25
Page 15
1997 Jun 27 15
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.12 Application 5: Line driver application (VP= 1.9 to 6 V).
handbook, full pagewidth
+
+
+
+
OA
INPUT
LOGIC
V/I
REFERENCE
V/I
1
STANDBY
MUTE
MODE
SVRR
GND
2 3
5 6
4
12
Cb
BUFFER
OUT2
OUT1
IN1
IN2
MGD120
11
14
1615
13
7 8
V
P
V
P
V
P1
V
P2
BUFFER
OA
50 k
100 k
100 k
50 k
50 k
50 k
50 k
50
k
TDA8559
DQC
100 µF
100 nF
+V
P
10 µF
1 k
1 k
10 µF
22 µF
Cr
Page 16
1997 Jun 27 16
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.13 Application 6: Line driver application (VP=6to18V).
handbook, full pagewidth
+
+
+
+
OA
INPUT
LOGIC
V/I
REFERENCE
V/I
1
STANDBY
MUTE
MODE
100 nF
100 nF
SVRR
GND
2 3
5 6
4
12
Cb
BUFFER
OUT2
OUT1
IN1
IN2
MGD121
11
14
1615
13
7 8
V
P
V
P
V
P1
V
P2
BUFFER
OA
50 k
100 k
100 k
50 k
50 k
50 k
50 k
50
k
TDA8559
DQC
100 µF
100 nF
220
nF
+V
P
10 µF
1 k
1 k
10 µF
22 µF
Cr
Page 17
1997 Jun 27 17
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.14 Application 7: Line driver application (VP=6to30V).
handbook, full pagewidth
+
− +
+
+
+
+
OA
INPUT
LOGIC
V/I
REFERENCE
V/I
1
STANDBY
MUTE
MODE
100 nF
100 nF
SVRR
GND
2 3
5 6
4
12
Cb
BUFFER
OUT2
POWER
AMPLIFIER
OUT1
IN1
IN2
MGD122
11
14
1615
13
7 8
V
P
V
P
V
P1
V
P2
BUFFER
OA
50 k
100 k
100 k
50 k
50 k
50 k
50 k
50
k
TDA8559
DQC
100 µF
100 nF
220
nF
+V
P
10 µF
10 µF
Page 18
1997 Jun 27 18
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Response curves for low input mode
Fig.15 Iq as a function of VP (stereo headphone).
(1) High mode. (2) Low mode.
handbook, halfpage
020
10
0
2
4
6
8
I
q
(mA)
48
V
P
(V)
12 16
MDA089
(2)
(1)
Fig.16 VP1 as a function of VP2 (stereo headphone).
handbook, halfpage
20
010 30
0
20
4
8
V
P1
(V)
V
P2
(V)
12
16
MDA090
Fig.17 THD as a function of Po (stereo headphone).
f =1 kHz. (1) VP= 3 V, RL=32Ω. (2) VP= 5 V, RL=32Ω.
handbook, halfpage
10
2
10
1
Po (W)
THD
(%)
10
1
10
2
MDA091
10
3
10
2
10
1
1
(2) (1)
Fig.18 THD as a function of frequency (stereo
headphone).
RL=32Ω. (1) VP= 5 V, THD = 50 mW. (2) VP= 3 V, THD = 20 mW.
handbook, halfpage
1
THD
(%)
f (Hz)
10
1
10
2
MDA092
10 10
2
(1)
10
3
10
4
10
5
(2)
Page 19
1997 Jun 27 19
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.19 Iq as a function of V
stb
(stereo headphone).
(1) VP=12V. (2) VP= 3 and 6 V. (3) VP= 3, 6 and 12 V.
handbook, halfpage
321
(1) (2) (3)
V
stb
(V)
I
q
(A)
0
MDA093
10
2
10
3
10
4
10
5
10
6
10
7
Fig.20 Vo as a function of V
mute
(stereo
headphone).
(1) VP=3V. (2) VP=12V.
handbook, halfpage
2.50 0.5 1 1.5 2
1
V
o
(V)
V
mute
(V)
10
1
10
2
10
3
10
4
10
5
MDA094
(2) (1)
Fig.21 Channel separation as a function of
frequency (stereo headphone).
VP= 3 V, Vi=20mV.
handbook, halfpage
80
60
40
20
0
MDA095
10
α
cs
(dB)
f (Hz)
10
2
10
3
10
4
10
5
Fig.22 Channel unbalance as a function of
frequency (stereo headphone).
VP= 3 V, Vi=20mV.
handbook, halfpage
1
0.5
0
0.5
1
MDA096
10
f (Hz)
Gr (dB)
10
2
10
3
10
4
10
5
Page 20
1997 Jun 27 20
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.23 SVRR as a function of frequency (stereo
headphone).
VP= 3 V, Rs=0Ω, Vr= 0.2 V (RMS).
handbook, halfpage
80
60
40
20
0
MDA097
10
f (Hz)
SVRR
(dB)
10
2
10
3
10
4
10
5
Fig.24 Po as a function of VP (stereo headphone).
(1) RL=32Ω, THD = 10%. (2) RL=32Ω, THD = 0.5%.
handbook, halfpage
04 12
0.4
0.3
0.1
0
0.2
8
VP (V)
P
o
(W)
MDA098
(2)
(1)
Fig.25 Total worst case power dissipation as a
function of supply voltage (SE) (stereo headphone).
(1) RL=25Ω. (2) RL=32Ω.
handbook, halfpage
04
V
P
(V)
P
(W)
812
1.5
0.5
0
1
MDA099
(2) (1)
Fig.26 THD as a function of Po (BTL mono).
f = 1 kHz. (1) VP= 3 V, RL=25Ω. (2) VP= 5 V, RL=25Ω.
handbook, halfpage
10
2
10
1
Po (W)
THD
(%)
10
1
10
2
MDA130
10
3
10
2
10
1
1
(2) (1)
Page 21
1997 Jun 27 21
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.27 THD as a function of frequency (BTL mono).
(1) VP= 3 V, RL=25Ω, THD = 70 mW. (2) VP= 5 V, RL=25Ω, THD = 150 mW.
handbook, halfpage
1
THD
(%)
f (Hz)
10
1
10
2
MDA131
10 10
2
10
3
10
4
10
5
(2)
(1)
Fig.28 SVRR as a function of frequency (BTL
mono).
VP= 3 V, Rs=0Ω, Vr= 0.2 V (RMS).
handbook, halfpage
80
60
40
20
0
MDA132
10
f (Hz)
SVRR
(dB)
10
2
10
3
10
4
10
5
Fig.29 Po as a function of supply voltage (BTL
mono).
(1) THD = 10%; RL=25Ω. (2) THD = 0.5%, RL=25Ω.
handbook, halfpage
04 12
1
0.75
0.25
0
0.5
8
VP (V)
P
o
(W)
MDA133
(2) (1)
Fig.30 Total worst case power dissipation as a
function of supply voltage (BTL mono).
(1) RL=25Ω. (2) RL=32Ω.
handbook, halfpage
04
V
P
(V)
P
(W)
812
1.6
1.2
0.4
0
0.8
MDA134
(2) (1)
Page 22
1997 Jun 27 22
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Response curves for high input mode
Fig.31 Po as a function of VP (SE) (stereo
headphone).
(1) RL=32Ω, THD = 10%. (2) RL=32Ω, THD = 0.5%.
handbook, halfpage
048
V
P
(V)
P
o
(W)
16
0
0.8
12
0.6
0.4
0.2
MDA119
(2) (1)
Fig.32 Total worst case power dissipation as a
function of supply voltage (SE) (stereo headphone).
(1) RL=25Ω. (2) RL=32Ω.
handbook, halfpage
048
V
P
(V)
P
(W)
16
2
0
1.6
12
1.2
0.8
0.4
MDA120
(2) (1)
Fig.33 THD as a function of Po (stereo headphone).
VP= 10 V, RL=32Ω, f = 1 kHz
handbook, halfpage
10
2
10
1
Po (W)
THD
(%)
10
1
10
2
MDA121
10
3
10
2
10
1
1
Fig.34 THD as a function of frequency (stereo
headphone).
VP= 10 V, RL= 32. (1) Po= 100 mW. (2) Po=50mW.
handbook, halfpage
1
THD
(%)
f (Hz)
10
1
10
2
MDA122
10 10
2
10
3
10
4
10
5
(2)
(1)
Page 23
1997 Jun 27 23
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.35 Channel separation as a function of
frequency (stereo headphone).
VP= 10 V, Vi=20mV.
handbook, halfpage
80
60
40
20
0
MDA123
10
f (Hz)
10
2
10
3
10
4
10
5
α
cs
(dB)
Fig.36 SVRR as a function of frequency (stereo
headphone).
VP= 10 V, Rs=0Ω, Vr= 0.2 V (RMS).
handbook, halfpage
80
60
40
20
0
MDA124
10
f (Hz)
SVRR
(dB)
10
2
10
3
10
4
10
5
Fig.37 THD as a function of Vo (stereo line driver).
(1) VP= 12 V, RL=1kΩ. (2) VP= 18 V, RL=1kΩ.
handbook, halfpage
10
2
10
1
Vo (V)
THD
(%)
10
1
10
2
MDA125
10
2
10
1
110
(2)
(1)
Fig.38 THD as a function of frequency (stereo line
driver).
VP= 12 V; Vo=1V.
handbook, halfpage
1
THD
(%)
f (Hz)
10
1
10
2
MDA126
10 10
2
10
3
10
4
10
5
Page 24
1997 Jun 27 24
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
Fig.39 Channel separation as a function of
frequency (stereo line driver).
VP= 12 V; Vi=20mV.
handbook, halfpage
80
60
40
20
0
MDA127
10
α
(dB)
f (Hz)
10
2
10
3
10
4
10
5
Fig.40 SVRR as a function of frequency (stereo
line driver).
VP= 12 V; Rs=0Ω; Vr= 0.2 V (RMS).
handbook, halfpage
80
60
40
20
0
MDA128
10
f (Hz)
SVRR
(dB)
10
2
10
3
10
4
10
5
Fig.41 Vo as a function of VP (stereo line driver).
(1) THD = 10%, RL=1kΩ. (2) THD = 0.5%, RL=1kΩ.
handbook, halfpage
020
10
0
2
4
6
8
V
o
(V)
48
V
P
(V)
12 16
MDA129
(2)
(1)
Page 25
1997 Jun 27 25
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
INTERNAL PIN CONFIGURATION
SYMBOL PIN EQUIVALENT CIRCUIT
STANDBY 1
+IN1, IN1, +IN2 and IN2
2, 3, 5 and 6
SVRR 4
V
P1
10 k
12 k
MGD110
V
P1
MGD106
50 k
V
P1
MGD107
50 k
50 k
50 k
Page 26
1997 Jun 27 26
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
MUTE 7
INPUT MODE 8
OUT2 and OUT1 11 and 14
SYMBOL PIN EQUIVALENT CIRCUIT
V
P1
MGD112
V
P1
MGD113
1 k
5 k
250 k
V
P1
buffer output
100
50
MGD108
Page 27
1997 Jun 27 27
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
BUFFER 12
V
P2
and V
P1
15 and 16
SYMBOL PIN EQUIVALENT CIRCUIT
V
P1
buffer output
MGD109
V
P2
V
P1
MGD111
2 k
Page 28
1997 Jun 27 28
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
PACKAGE OUTLINES
UNIT
A
max.
1 2
b
1
cEe M
H
L
REFERENCES
OUTLINE VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
inches
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
SOT38-1
92-10-02 95-01-19
A
min.
A
max.
b
max.
w
M
E
e
1
1.40
1.14
0.055
0.045
0.53
0.38
0.32
0.23
21.8
21.4
0.86
0.84
6.48
6.20
0.26
0.24
3.9
3.4
0.15
0.13
0.2542.54 7.62
0.30
8.25
7.80
0.32
0.31
9.5
8.3
0.37
0.33
2.2
0.087
4.7 0.51 3.7
0.15
0.021
0.015
0.013
0.009
0.010.100.0200.19
050G09 MO-001AE
M
H
c
(e )
1
M
E
A
L
seating plane
A
1
w M
b
1
e
D
A
2
Z
16
1
9
8
b
E
pin 1 index
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
(1) (1)
D
(1)
Z
DIP16: plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
Page 29
1997 Jun 27 29
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
X
w M
θ
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v M
A
(A )
3
A
8
9
1
16
y
pin 1 index
UNIT
A
max.
A1A2A3b
p
cD
(1)E(1) (1)
eHELLpQZywv θ
REFERENCES
OUTLINE VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
1.27
6.2
5.8
0.7
0.6
0.7
0.3
8 0
o o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
1.0
0.4
SOT109-1
95-01-23 97-05-22
076E07S MS-012AC
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.39
0.38
0.16
0.15
0.050
1.05
0.041
0.244
0.228
0.028
0.020
0.028
0.012
0.01
0.25
0.01 0.004
0.039
0.016
0 2.5 5 mm
scale
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
Page 30
1997 Jun 27 30
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
SOLDERING Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our
“IC Package Databook”
(order code 9398 652 90011).
DIP
SOLDERING BY DIPPING OR BY WA VE The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T
stg max
). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
R
EPAIRING SOLDERED JOINTS
Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
SO
REFLOW SOLDERING Reflow soldering techniques are suitable for all SO
packages. Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.
Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.
W
AVE SOLDERING
Wave soldering techniques can be used for all SO packages if the following conditions are observed:
A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used.
The longitudinal axis of the package footprint must be parallel to the solder flow.
The package footprint must incorporate solder thieves at the downstream end.
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
R
EPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
Page 31
1997 Jun 27 31
Philips Semiconductors Product specification
Low-voltage stereo headphone amplifier TDA8559
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Page 32
Internet: http://www.semiconductors.philips.com
Philips Semiconductors – a worldwide company
© Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 4027 88399
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 4027 24825
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Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14,
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TEL AVIV 61180, Tel. +972 3 645 0444, Fax.+972 3649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
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Printed in The Netherlands 547027/1200/02/pp32 Date of release: 1997Jun 27 Document order number: 9397 750 02066
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