Datasheet tda8040t DATASHEETS (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8040T

Quadrature demodulator

Objective specification
Supersedes data of 1995 Feb 07
File under Integrated Circuits, IC02

1996 Oct 08

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

FEATURES

• +5 V supply voltage

• Bandgap internal reference voltage

• Low crosstalk between I (in-phase) and Q (quadrature)

channel outputs

• High operating input sensitivity

• High Carrier-to-Noise Ratio (CNR) of the VCO.

It has been designed to operate in conjunction with the
TDA8041H to provide a complete QPSK demodulator.

The design of this circuit has been optimized to provide the
best quadrature accuracy necessary for digital receiver
applications and particularly for digital television.

The TDA8040T includes two matched mixers, an
RF amplifier, a symmetrical Voltage Controlled Oscillator
(VCO), a frequency divider and two matched amplifiers.
Two external filters are required for the baseband filtering.

APPLICATIONS

• Quadrature Phase Shift Keying (QPSK) demodulation.

The VCO requires an external LC tank circuit with two
varicap diodes. This oscillator operates at twice the
IF carrier frequency and can be used in a carrier recovery
AFC loop.

GENERAL DESCRIPTION

The TDA8040T is a monolitic bipolar IC dedicated for
quadrature demodulation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

CC(tot)

V

i(RF)

f

i(RF)

V

olQ(p-p)

supply voltage 4.5 5.0 5.5 V
total supply current VCC=5V 707990mA
operating input voltage level 64 67 70 dBµV
RF input signal frequency 10.7 − 150 MHz
I and Q output voltage

− 0.5 − V

(peak-to-peak value)

Eφ

(IQ)

phase error between the

−−3 deg

I and Q channels

E

G(IQ)

gain error between the

−−1dB

I and Q channels

E

G(tilt)

α

ct(IQ)

gain tilt error in the I and Q channels −−1dB
crosstalk between the

30 −−dB

I and Q channels

IM3 intermodulation distortion in the

40 −−dB

I and Q channels

ORDERING INFORMATION

TYPE NUMBER

TDA8040T SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1

1996 Oct 08 2

PACKAGE

NAME DESCRIPTION VERSION

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

BLOCK DIAGRAM

handbook, full pagewidth

V

CC(A)

GND(D)

RF A
RF B

V

CC(D)

GND(A)

1

2

I

Q

AMP

3

4

AMP

5

6

7

AMP

89

TDA8040T

VOLTAGE

REFERENCE

0

2

÷

90

AMP

VCO

AMP

16

15

14

13

12

11

10

MGE511

I

in

I

out

V

CC(V)

VCOB

VCOA

GND(V)

Q

out

Q

in

Fig.1 Block diagram.

1996 Oct 08 3

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

PINNING

SYMBOL PIN DESCRIPTION

V

CC(A)

I 2 I channel buffer output
GND(D) 3 demodulator ground
RF A 4 RF input A
RF B 5 RF input B
V

CC(D)

Q 7 Q channel buffer output
GND(A) 8 I and Q amplifiers ground
Q

in

Q

out

GND(V) 11 VCO ground
VCOA 12 VCO tank circuit A
VCOB 13 VCO tank circuit B
V

CC(V)

I

out

I

in

1 supply voltage for I and Q amplifiers

6 supply voltage for demodulator

9 Q channel amplifier input

10 Q channel amplifier output

14 supply voltage for VCO
15 I channel amplifier output
16 I channel amplifier input

handbook, halfpage

V

GND(D)

V

GND(A)

CC(A)

RF A
RF B

CC(D)

I

Q

1
2
3
4

TDA8040T

5
6
7
8

MGE510

Fig.2 Pin configuration.

16
15
14
13
12
11
10

9

I

in

I

out

V

CC(V)

VCOB
VCOA
GND(V)
Q

out

Q

in

FUNCTIONAL DESCRIPTION

The QPSK modulated RF signal is applied at the input of a
high gain RF amplifier. The amplified signal is then mixed
in a pair of mixers with two LO signals, which are
90 degrees out of phase, to produce the in-phase (I) and
quadrature (Q) signals. These two signals are separately
buffered to drive the external low-pass filters used for the
baseband filtering. The I and Q signals are then amplified
by two matched amplifiers designed to avoid crosstalk
between channels.

The VCO operates at twice the carrier frequency. Its output
signal is applied to a frequency divider (divide-by-2) to
produce the two LO signals which are 90 degrees out of
phase. The VCO is powered from the internal voltage
stabilizer to ensure good shift performance.

1996 Oct 08 4

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC(A)

V

CC(D)

V

CC(V)

V

n(max)

I

max

t

sc(max)

Z

L(IQ)

Z

LA(IQ)

V

VCO(p-p)

P

tot

T

stg

T

j

T

amb

supply voltage for I and Q amplifiers −0.3 +6.0 V
supply voltage for demodulator −0.3 +6.0 V
supply voltage for VCO −0.3 +6.0 V
maximum voltage on all pins −0.3 V

CC

V
maximum sink or source current − 10 mA
maximum short-circuit time on outputs − 10 s
AC load impedance for

fi= 15 MHz 35 −Ω

I and Q channels
AC load impedance for

fi= 15 MHz 300 −Ω

I and Q output amplifiers
voltage drive level for external oscillator

− 0.6 V

signal (peak-to-peak value)
total power dissipation T

=70°C − 500 mW

amb

storage temperature −55 +150 °C
junction temperature − 150 °C
operating ambient temperature 0 70 °C

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air 110 K/W

1996 Oct 08 5

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

CHARACTERISTICS

V

CC(A)=VCC(D)=VCC(V)

measured in application circuit of Fig.10; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

CC(A)

supply voltage for I and Q channel
amplifier

V

CC(D)

V

CC(V)

I

CC(A)

supply voltage for demodulator 4.75 5.0 5.25 V
supply voltage for VCO 4.75 5.0 5.25 V
supply current for I and Q channel

amplifier

I

CC(D)

I

CC(V)

supply current for demodulator note 1 − 16 − mA
supply current for VCO note 1 − 34 − mA

QPSK demodulator

f

i(RF)min

f

i(RF)max

R

i(RF)

X

i(RF)

V

i(RF)

R

o(IQ)

V

olQ(p-p)

minimum input IF frequency −−10.7 MHz
maximum input IF frequency 150 −−MHz
resistive input impedance − 50 −Ω
reactive input impedance − 5 −Ω
operating input voltage 64 67 70 dBµV
output resistance for I and Q channels 45 50 55 Ω
output voltage for I and Q channels

(peak-to-peak value)
G
E
E
E

ch(IQ)
φ(IQ)
G(IQ)
G(tilt)

I and Q channel gain note 3 21 22.5 24 dB
phase error between I and Q channels note 4 −−3 deg
gain error between I and Q channels note 4 −−0.5 dB
gain tilt error between I and Q channels note 5 −−0.8 dB

NF double sideband noise figure Z

IM3 intermodulation distortion in the

I and Q channels

=5V; f

= 70 MHz; f

i(RF)

= 140 MHz; V

i(VCO)

=67dBµV; T

i(RF)

amb

=25°C;

4.75 5.0 5.25 V

note 1 − 29 − mA

note 2 − 85 − mV

source

=50Ω;

− 17 20 dB

note 6
note 7 45 −−dB

1996 Oct 08 6

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltage controlled oscillator (VCO)

f

iVCO(min)

f

iVCO(max)

∆f frequency deviation − 6 − MHz
∆f

drift

∆f

shift

CNR

osc

V

osc(p-p)

R

source(osc)

minimum input oscillator frequency −−21.4 MHz
maximum input oscillator frequency 300 −−MHz

frequency drift note 8 −−100 kHz
frequency shift ∆VCC= 5% −−100 kHz
oscillator carrier-to-noise ratio at 10 kHz;

− 85 − dBc/Hz

note 9
at 100 kHz;

− 105 − dBc/Hz

note 9

required voltage drive level for external

100 −−mV

oscillator injection (peak-to-peak value)
source resistance for external oscillator

−−50 Ω

generator

I and Q amplifiers

V

ilQ(p-p)

I and Q channel input voltage

note 10 − 0.1 − V

(peak-to-peak value)

V

olQ(p-p)

I and Q channel output voltage
(peak-to-peak value)

note 10 − 0.5 − V
at 1 dB gain

1.0 −−V
compression;
note 10

IM3 intermodulation distortion in the

note 11 40 −−dB

I and Q channels

B

α

V

IQ
ct(IQ)
O(IQ)

bandwidth of I and Q amplifiers at 0.5 dB 25 −−MHz
crosstalk between the I and Q channels note 12 30 −−dB
DC output voltage level for the

− 2.45 − V

I and Q amplifier
Z
Z

I(IQ)
O(IQ)

input impedance of the I and Q channels − 10 − kΩ

output impedance of the I and Q channels − 50 −Ω

Notes to the characteristics

1. Typical supply currents are defined for VCC=5V.

2. The I and Q channel output voltages are measured with the following conditions:
a) f

i(RF)

=1⁄2f

+ 500 kHz (70.5 MHz)

i(VCO)

b) the higher frequencies (140.5 MHz) are filtered out.

V

3. The I and Q channels gain is defined by .

G

IQ

IQ rms()

=

------------------------­V

iRF rms()

The gains are measured with the conditions defined in note 2.

1996 Oct 08 7

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

4. The phase and gain error between the I and Q channel outputs is measured as follows:
a) the oscillator is tuned at f
b) a sine wave signal f

i(RF)

c) the higher frequencies (140.5 MHz) are filtered out.
Under these conditions, in each I and Q channel, a sine wave with a frequency of 500 kHz will be present.

These sine waves should be 90 degrees out of phase.
The phase error is defined as the phase quadrature imbalance between the I and Q channels.
The gain error is defined as the gain difference between the I and Q channels.

5. The tilt is defined as the difference between the maximum and the minimum channel gain measured in a frequency
band of 25 MHz around f

i(RF)

6. The specified noise figure is the maximum value obtained from I and Q channel noise measurement. The noise meter
is tuned to 10.7 MHz.

7. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in the
I and Q channels. Intermodulation is measured with two sine wave signals at f
an amplitude of 67 dBµV for each tone. The difference in level between the converted carriers (9 MHz and 11 MHz)
and the intermodulation products after frequency conversion (7 MHz and 13 MHz) is defined as IM3 (see Fig.3).

8. The temperature for the VCO frequency drift is defined for ∆T
Fig.10 with the following component values for the tank circuit:

a) L1: 22 nH (TOKO NE545BNA5 - 100082)
b) C1: 15 pF NP0
c) C2: 33 pF N220 (220 ppm/°C)
d) C3 and C4: 1 nF
e) C5: 3.3 µF
f) D1 and D2: BB133
g) R1 and R2: 100 kΩ
h) R3: 1 kΩ.

9. The phase noise is measured at the oscillator frequency (140 MHz). Due to the frequency divider, the phase noise
at the input of the mixers is 6 dB better (111 dBc/Hz at 100 kHz).

10. Output amplifiers are measured separately with an external DC bias applied at pins 9 and 16. The gain is measured
for an output signal of 500 mV (p-p) at fi= 500 kHz.

11. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in the
I and Q output amplifier. Intermodulation is measured with two sine wave signals at fi= 9 MHz and fi= 11 MHz at an
output level of 500 mV (p-p) for each tone.

12. The crosstalk between the I and Q amplifiers is defined as the ratio between the wanted output signal and the
disturbing signal from the other channel. To measure the crosstalk of the I and Q amplifiers, a sine wave
15 MHz, 0.1 V (p-p) is applied at the I input and a sine wave 15.5 MHz, 0.1 V (p-p) is applied at the Q input. For each
output, the difference in level is measured between the 15 MHz and the 15.5 MHz component. This difference is the
value of the crosstalk between the I and Q amplifiers.

= 140 MHz

i(VCO)

=1⁄2f

+ 500 kHz (70.5 MHz) is applied at the IF input

i(VCO)

. The specified tilt is the maximum tilt value found in one of the I or Q channels.

= 79 MHz and f

i(RF)

=25°C. It is measured in the application circuit of

amb

= 81 MHz with

i(RF)

1996 Oct 08 8

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

handbook, halfpage

IM3

75

9111315

Fig.3 IM3 definition.

MGE512

f

(MHz)

i

handbook, halfpage

13

C1

C2

12

C3

L1

C4

Fig.4 Tank circuit.

1996 Oct 08 9

R2

R1

D2

D1

MGE513

C5

R3

V

varicap

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

INPUT PIN CONFIGURATION

handbook, halfpage

V

CC(A)

GND(A)

Fig.5 Input circuitry V

handbook, halfpage

1

9,16

8

12

to GND(A).

CC(A)

MGE514

handbook, halfpage

Fig.6 Input circuitry V

handbook, halfpage

13

V

CC(A)

V

CC(A)

GND(A)

1

2,7

1

10,15

8

to GND(A).

CC(A)

MBE259

11

GND(V)

Fig.7 Input circuitry V

MGE515

to GND(V).

CC(V)

handbook, halfpage

14

V

CC(V)

45

3

GND(V)

Fig.9 Input circuitry V

to GND(V).

CC(V)

8

GND(A)

Fig.8 Input circuitry V

MBE262

to GND(A).

CC(A)

MBE261

1996 Oct 08 10

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

APPLICATION INFORMATION

handbook, full pagewidth

+5 V

RF

in

+5 V

V

CC(A)

GND(D)

RF A
RF B

V

CC(D)

GND(A)

LOW-PASS

FILTER

I

1

AMP

I

2

AMP

3

4

AMP

5

6

Q

7

AMP

89

TDA8040T

LOW-PASS

FILTER

VOLTAGE

REFERENCE

0

2

÷

90

VCO

AMP

16

15

14

13

12

11

10

in

I

out

V

CC(V)

VCOB

VCOA

GND(V)

Q

out

Q

in

MGE516

+5 V

V

varicap

Fig.10 Application circuit.

1996 Oct 08 11

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

PACKAGE OUTLINE

SO16: plastic small outline package; 16 leads; body width 3.9 mm

SOT109-1

Z

16

pin 1 index

1

D

c

y

9

A

2

A

1

8

e

w M

b

p

E

H

E

detail X

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE
VERSION

SOT109-1

A

max.

1.75

0.069

A1A2A

0.25

0.10

0.0098

0.0039

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1996 Oct 08 12

0 2.5 5 mm

b

3

p

1.45

1.25

0.057

0.049

IEC JEDEC EIAJ

076E07S MS-012AC

0.25

0.01

0.49

0.36

0.019

0.014

0.25

0.19

0.0098

0.0075

(1)E(1) (1)

cD

10.0

4.0

9.8

3.8

0.39

0.16

0.38

0.15

REFERENCES

scale

eHELLpQZywv θ

1.27

0.050

6.2

5.8

0.24

0.23

1.0

 0.7

1.05

0.4

0.039

0.041

0.016

0.25

0.6

0.028

0.01 0.004

0.020

EUROPEAN

PROJECTION

0.25 0.1

0.01

0.7

0.3

0.028

0.012

ISSUE DATE

91-08-13
95-01-23

o

8

o

0

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“IC Package Databook”

our

Reflow soldering

Reflow soldering techniques are suitable for all SO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

(order code 9398 652 90011).

Wave soldering

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1996 Oct 08 13

Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Oct 08 14