Datasheet TDA8003TS-C1 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8003TS

2

I

C-bus SIM card interface

Preliminary specification
File under Integrated Circuits, IC02

1998 Oct 15

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

FEATURES

• Subscriber Identification Module (SIM) card interface in
accordance with GSM11.11, GSM11.12(Global System
for Mobile communication) and ISO 7816 requirements

• VCCregulation (3 or 5 V ±8%) with controlled rise and
fall times

• Card take-off protection

• One protected and buffered pseudo-bidirectional I/O line

(I/O referenced to VCC and SIMI/O referenced to V

• Clock generation (up to 10 MHz) with synchronous start
and frequency doubling

• Clock stop LOW, clock stop HIGH or 1.25 MHz (from
internal oscillator) for cards Power-down mode

• Automatic activation and deactivation sequences of an
independent sequencer

• Automatic processing of pin RST with count of the
45000 CLK cycles for begin of the Answer To Reset
(ATR)

• Warm reset command

• Supply voltage supervisor for Power-on reset, spikes

killing and emergency deactivation in case of supply
drop-out

• DC-to-DC converter (doubler, tripler or follower)
allowing operation in a 3 or 5 V environment
(2.5 ≤ V

DD

≤ 6V)

• Enhanced Electrostatic discharge (ESD) protections on

card side (6 kV minimum)

• Power-down mode with several active features and
current reduction

• Off mode with 2 µA current

• Control from a microcontroller via a 400 kHz slave

I2C-bus (4 possible addresses: 48H, 4AH, 4CH
and 4EH)

• Four parallel devices possible due to 2 sub-address
wires

• Interface signals supplied by an independent voltage
(1.5 ≤ V

DDI

≤ 6 V).

DDI

TDA8003TS

APPLICATIONS

• GSM mobile phones

• SAM interfaces in banking terminals

)

• Portable card readers, etc.

GENERAL DESCRIPTION

The TDA8003TS is a low cost one chip SIM interface, in
accordance with GSM11.11, GSM11.12 and EMV96
(Europay, Mastercard, Visa) with card current limitation.
Controlled by I
space, external components count and connection count
(see Chapter “Application information”).

Due to its integrated DC-to-DC converter, it ensures fully
cross-compatibility between 3 or 5 V cards and 3 or 5 V
environments. The very low-power consumption in
Power-down mode and Off mode saves battery power.

2

C-bus, it is optimized in terms of board

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA8003TS/C1 SSOP24 plastic shrink small outline package; 24 leads; body width 5.3 mm SOT340-1

1998 Oct 15 2

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

TDA8003TS

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DD

I

DD

supply voltage on pins V
and V

DDP

supply current on pins V
and V

DDP

DDS

DDS

Off mode; VDD= 3.3 V −−2µA
Power-down mode; V

DD

= 3.3 V;

2.5 − 6V

−−500 µA
VCC=5V; ICC= 100 µA; SIMCLK
connected to PGND or V

DDI

;

CLK is stopped
active mode; V

ICC= 6 mA; f
active mode; V

= 3.3 V; VCC=3V;

DD

= 3.25 MHz

CLK

= 3.3 V;

DD

−−18 mA

−−50 mA

VCC= 5 V; ICC=10mA;
f

= 3.25 MHz

CLK

V

DDI

V

CC

active mode; V
ICC= 6 mA; f

active mode; V
ICC= 10 mA; f

interface signal supply voltage 1.5 − 6V
card supply voltage 5 V card; active mode;

= 5 V; VCC=3V;

DD

= 3.25 MHz

CLK

= 5 V; VCC=5V;

DD

= 3.25 MHz

CLK

−−10 mA

−−30 mA

4.6 5 5.4 V
0<ICC< 15 mA; 40 nAs dynamic
load on 200 nF capacitor

3 V card; active mode;
0<I

< 10 mA; 24 nAs dynamic

CC

2.75 3 3.25 V

load on 200 nF capacitor

SR slew rate on V
t

de

t

act

f

i(SIMCLK)

T

amb

deactivation time −−120 µs
activation time −−150 µs
clock input frequency 0 − 20 MHz
operating ambient temperature −40 − +85 °C

(rise and fall) C

CC

5 V card; bit PDOWN = 1; I
3 V card; bit PDOWN = 1; I

= 200 nF 0.05 − 0.25 V/µs

L(max)

< 5 mA 4.6 − 5.4 V

CC

< 5 mA 2.75 − 3.25 V

CC

1998 Oct 15 3

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

BLOCK DIAGRAM

handbook, full pagewidth

VUP

8

100 nF

3

PGND

TDA8003TS

I/O

12

13

9

11

V

CC

200 nF

RST

CLK

100 nF

S4

S3

6

4

DC-TO-DC

CONVERTER

ANALOG

DRIVERS

AND

PROTECTIONS

100 nF

S1
2

V

DDP

S2

5

7

OSCILLATOR

2.2 µF

INTERNAL

V

DDS

100 nF

14

VOLTAGE

SUPERVISOR

SEQUENCER

I2C-BUS

INTERFACE

AND

REGISTERS

CLOCK

COUNTER

TDA8003TS

21

SIMERR

15

DEL

10 nF

18

23
22
19
20

1

17

V

DDI

SAD1
SAD0
SDA
SCL

PWROFF

SIMI/O

PRES

16

Fig.1 Block diagram.

1998 Oct 15 4

SGND

CLOCK

CIRCUITRY

10

24

MGR434

SIMCLK

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

TDA8003TS

PINNING

SYMBOL PIN DESCRIPTION

PWROFF 1 control input for entering the Off mode (active LOW)
S1 2 capacitor connection for the DC-to-DC converter (between S1 and S2)
PGND 3 power ground
S3 4 capacitor connection for the DC-to-DC converter (between S3 and S4)
V

DDP

5 power supply voltage
S4 6 capacitor connection for the DC-to-DC converter (between S3 and S4)
S2 7 capacitor connection for the DC-to-DC converter (between S1 and S2)
VUP 8 DC-to-DC converter output (must be decoupled with 100 nF to ground)
I/O 9 input/output to and from the card reader (C7I); see Fig.7
SGND 10 signal ground
CLK 11 clock output to the card reader (C3I)
V

CC

12 supply voltage to the card reader (C1I)
RST 13 reset output to the card reader (C2I)
V

DDS

14 signal supply voltage
DEL 15 external capacitor connection for the delay on voltage supervisor
PRES 16 card presence indication input (active LOW); note1
SIMI/O 17 input/output to and from the microcontroller (internal 20 kΩ pull-up resistor connected to V
V

DDI

SDA 19 I
SCL 20 I
SIMERR 21 interrupt output (active LOW; internal 100 kΩ pull-up resistor connected to V
SAD0 22 I
SAD1 23 I

18 supply voltage for the interface signals with the system

2

C-bus serial data input/output

2

C-bus serial clock input

2

C-bus slave address selection input

2

C-bus slave address selection input

DDI

)

SIMCLK 24 external clock input

DDI

)

Note

1. Card presence input with negative current source. To be used with the card reader switch connected to V
or V

. The switch is normally closed when the card is not present. If the switch connection is open-circuit or pin 16

DDP

is not connected, then the interface will always detect a present card (see Fig.7).

1998 Oct 15 5

DDS

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

handbook, halfpage

PWROFF

S1

PGND

S3

V

DDP

S4
S2

VUP

I/O

SGND

CLK

V

CC

1
2
3
4
5
6

TDA8003TS

7
8

9
10
11
12

MGR435

24
23
22
21
20
19
18
17

16
15
14
13

SIMCLK
SAD1
SAD0

SIMERR
SCL
SDA
V

DDI

SIMI/O
PRES
DEL
V

DDS

RST

TDA8003TS

Fig.2 Pin configuration.

FUNCTIONAL DESCRIPTION

Figure 1 shows the block diagram of the TDA8003TS.
The functional blocks will be described in the following
sections. It is assumed that the reader of this specification
is aware of GSM11.11 and ISO 7816 terminology.

2

C-bus control

I

The I2C-bus interface is used:

• To configure the clock to the card in active mode
(1⁄2f

SIMCLK

and1⁄4f

SIMCLK

)

• To configure the clock to the card in power reduction
mode (stop LOW, stop HIGH or ±1.25 MHz derived
from the internal oscillator)

• For selecting operation with a 3 or 5 V card

• For starting or stopping sessions (cold reset)

• For initiating a warm reset

• For entering or leaving the Power-down mode

• For asking the status (card present or not, hardware

problem occurred, unresponsive card after activation,
supply drop-out detected by the voltage supervisor, card
powered or not)

• To configure SIMI/O and I/O in high-impedance (for use
of several TDA8003TS in parallel).

The structure of the I

2

C-bus data frames is as follows:

• Commands to the TDA8003TS:
– START/ADDRESS/WRITE
– COMMAND BYTE
– STOP.
The fixed address is 01001XY. X and Y are defined by

the logic levels on pins SAD1 and SAD0 as shown in
Table 1 (connect to ground for logic 0; connect to V
for logic 1). The command bits are described in Table 2.
The commands are executed on the rising edge of the
9th SCL pulse.

• Status from the TDA8003TS (see Table 4). The fixed
address is 01001XY. X and Y are defined by the logic
levels on pins SAD1 and SAD0 as shown in Table 1.

Table 1 Address selections

ADDRESS SAD1 SAD0

48H 0 0
4AH 0 1

4CH 1 0

4EH 1 1

DDI

1998 Oct 15 6

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

TDA8003TS

Table 2 Description of the command bits; note 1

SYMBOL BIT DESCRIPTION

START/STOP 0 Logic 1 initiates an activation sequence and a cold reset procedure. Logic 0 initiates a

deactivation sequence.

WARM 1 Logic 1 initiates a warm reset procedure. It will be automatically reset by hardware when the

card starts answering, or when the 2 times 45000 CLK pulses have expired without answer
from the card.

3 V/5 VN 2 Logic 1 sets the card supply voltage V

to 3 V. Logic 0 sets VCC to 5 V.

CC

PDOWN 3 Logic 1 applies on CLK the frequency defined by bits CLKPD1 and CLKPD2, and enters a

reduced consumption mode. Logic 0 sets the circuit back to normal mode.
CLKPD1 4 Bits 4 and 5 determine the clock to the card at power-down as shown in Table 3.
CLKPD2 5
DT/DFN 6 Logic 1 sets f

CLK

to1⁄2f

(in active mode). Logic 0 sets f

SIMCLK

CLK

to1⁄4f

SIMCLK

.

I/OEN 7 Logic 1 will transfer I/O to SIMI/O. Logic 0 sets I/O and SIMI/O to high-impedance.

Note

1. All bits are cleared at reset.

Table 3 Clock to the card at power-down

BIT 4 BIT 5 FUNCTION

0 0 clock stop LOW
0 1 clock stop HIGH
1 0 clock is

1

⁄2f

osc

1 1 no change

Table 4 Description of the status bits; note 1

SYMBOL BIT DESCRIPTION

PRES 0 Logic 1 when the card is present. Logic 0 when the card is not present.
PRESL 1 Logic 1 when the card has been extracted or inserted. Logic 0 when the status is read-out.

− 2 Bit 2 is not used and is fixed to logic 0.
SUPL 3 Logic 1 when the voltage supervisor has signalled a fault. Logic 0 when the status is read-out.
PROT 4 Logic 1 when an overload has occurred during a session. Logic 0 when the status is read-out.
MUTE 5 Logic 1 when a card has not answered after 2 times 45000 CLK cycles. Logic 0 when the

status is read-out.
EARLY 6 Logic 1 when a card has answered between 200 and 352 CLK cycles. Logic 0 when the

status is read-out.
ACTIVE 7 Logic 1 when the card is power-on. Logic 0 when the card is power-off.

Note

1. In case of card extraction, supply drop-out or overload detection within a session, the card will be automatically
deactivated,

SIMERR pulled LOW, bit START = 0 and the corresponding status bit = 1. The status bit will be logic 0
and SIMERR will be released when the microcontroller reads out the status register, on the 7th SCL pulse. After a
supply drop-out, SIMERR will be released at the end of the alarm pulse and bit SUPL = 1.

1998 Oct 15 7

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

Power supply

The circuit operates within a supply voltage range of

2.5 to 6 V. The supply pins are V
Pins V

and PGND only supply the DC-to-DC converter

DDP

for the analog drivers to the card and must be decoupled
externally because of the large current spikes that the card
and the DC-to-DC converter can create. An integrated
spike killer ensures the card contacts to remain inactive
during power-up or power-down. An internal voltage
reference is generated which is used for the DC-to-DC
converter, the voltage supervisor and the V

All interface signals with the microcontroller (PWROFF,
SIMCLK, SAD1, SAD0, SIMERR, SCL, SDA and SIMI/O)
are referenced to a separate supply pin V
be different from VDD (1.5 ≤ V

DDI

The pull-up resistors on bus lines SDA and SCL may be
referenced to a voltage higher than V
use of peripherals which do not operate at V

and SGND.

DDS

≤ 6 V).

DDI

generator.

CC

, which may

DDI

. This allows the

.

DDI

TDA8003TS

The voltage supervisor (see Fig.3) senses V
It generates an alarm pulse, whose length tW is defined by
an external capacitor connected to pin DEL, when VDD is
too low to ensure proper operation (1 ms per 1 nF typical).

During this alarm pulse, SIMERR is LOW and the I2C-bus
is unresponsive. SIMERR goes back to HIGH, and the
I2C-bus becomes operational at the end of this alarm
pulse. Bit SUPL is set as long as the status has not been
read.

It is also used in order to either block any spurious signals
on card contacts during microcontroller reset, or to force
an automatic deactivation of the contacts in the event of
supply drop-out.

Outside a card session, SIMERR is LOW as long as the
voltage supervisor is active. If a supply drop-out occurs
during a session, SIMERR falls to LOW, bit START is
cleared and an automatic deactivation is initiated.

DDS

.

handbook, full pagewidth

V

DDS

DEL

SIMERR

2

I

C-bus unresponsive

t

W

status read

after event

2

I

C-bus OK

t

W

2

C-bus

I

unresponsive

I2C-bus OK

I2C-bus

unresponsive

MGR436

Fig.3 Voltage supervisor.

1998 Oct 15 8

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

DC-to-DC converter

The whole circuit is powered by V
VCCgenerator, the other card contact buffers and the
interface signals.

The DC-to-DC converter acts as a doubler or a tripler,
depending on the supply voltage VDD and the card supply
voltage VCC. There are basically four possible situations:

• VDD= 3 V and VCC= 3 V. The DC-to-DC converter acts
as a doubler with a regulation of V

4.5 V

= 3 V and VCC= 5 V. The DC-to-DC converter acts

• V

DD

as a tripler with a regulation of V

6.5 V

• VDD= 5 V and VCC= 3 V. The DC-to-DC converter is
disabled and VDD is applied to pin VUP

• VDD= 5 V and VCC= 5 V. The DC-to-DC converter acts
as a doubler with a regulation of V

6.5 V.

The recognition of the supply voltage is done by the
TDA8003TS at approximately 3.75 V.

When a card session is requested by the microcontroller,
the sequencer will first start the DC-to-DC converter, which
is a switched capacitors type, clocked by an internal
oscillator at a frequency f
The output voltage V

of approximately 2.5 MHz.

osc

is regulated at approximately

VUP

4.5 or 6.5 V and subsequently fed to the VCCgenerator.

VCC and PGND are used as a reference for all other card
contacts.

, except for the

DDS

at approximately

VUP

at approximately

VUP

at approximately

VUP

TDA8003TS

FF MODE

O
The Off mode is entered when the PWROFF signal is

LOW. In this mode, no function is valid. This mode avoids
switching off the power supply of the device, and gives a
current consumption less than 2 µA. Before entering the
Off mode, the card must be deactivated.

The Off mode is resumed when the PWROFF signal
returns to HIGH. This re-initializes the voltage supervisor,
and has the same effect as a reset of the device. As long
as the device is not ready to operate, the SIMERR signal
will remain LOW.

Sequencer and clock counter

The sequencer handles the ensuring activation and
deactivation sequences in accordance with GSM11.11
and ISO 7816, even in case of emergency (card take-off,
short-circuit and supply drop-out). The sequencer is
clocked with the internal oscillator frequency f

The activation is initiated with the START command (only
if the card is present, and if the voltage supervisor does not
detect a fault on the supply). During activation, VCC goes
HIGH and subsequently I/O is enabled and CLK is started
with RST = LOW. The clock counter counts the CLK
pulses till a start bit is detected on I/O.

After 45000 CLK pulses, if no start bit on I/O has been
detected, the sequencer toggles RST to HIGH, and counts
again 45000 CLK pulses. If, again, no start bit has been
detected, SIMERR will be pulled LOW and the information
of bit MUTE is set in the status register.

osc

.

P

OWER-DOWN MODE

The Power-down mode is used for current consumption
reduction when the card is in Sleep mode.

For entering Power-down mode, the microcontroller must
first select CLK in this mode (stop LOW, stop HIGH or

1.25 MHz from the internal oscillator) with bits CLKPD1

and CLKPD2. Subsequently, the microcontroller sends the
command PDOWN, CLK is switched to the value
predefined by bits CLKPD1 and CLKPD2, and SIMCLK
may be stopped (HIGH or LOW).

If the selected CLK is stopped, the biasing currents in the
buffers to the card will be reduced. The voltage supervisor
and all control functions also remain active. The maximum
current taken by the card in this mode when CLK is
stopped is assumed to be less than 5 mA.

Before leaving the Power-down mode, the clock signal
must first be applied to SIMCLK, and then bit PDOWN
must be set to logic 0.

1998 Oct 15 9

If a start bit has been detected during the two 45000 CLK
pulses slots, the clock counter is stopped, RST is kept at
the same level and the session can go on between the
card and the system.

The clock counter does not take care of any start bit during
the 200 first CLK pulses of both slots; if a start bit is
detected between 200 and 352 CLK pulses of both slots,
then SIMERR will be pulled LOW and the information of
bit EARLY is set in the status register.

The deactivation is initiated either by the microcontroller
(STOP command), or automatically by the TDA8003TS in
case of card take-off, short-circuit or supply voltage
drop-out detected by the voltage supervisor. During
deactivation, RST will go LOW, CLK is stopped, I/O is
disabled and VCC goes LOW.

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

Clock circuitry

The clock to the card is either derived from pin SIMCLK
(2 to 20 MHz) or from the internal oscillator.

During a card session, f

1

⁄2f

SIMCLK

or1⁄4f

SIMCLK

For the card Sleep mode, CLK may be chosen stop LOW,
stop HIGH or1⁄2f

(1.25 MHz) with bits CLKPD1

osc

and CLKPD2. This predefined value will be applied to CLK
when bit PDOWN is set to logic 1.

The first CLK pulse has the correct width, and all frequency
changes are synchronous, ensuring that no pulse is
smaller than 45% of the shortest period.

The duty cycle is within 45 and 55% in stable state, the rise
and fall times are less than 8% of the period and
precaution has been taken so that there is no overshoot or
undershoot.

CTIVATION SEQUENCE

A
Figure 4 shows the activation sequence. When the card is

inactive, VCC, CLK, RST and I/O are LOW, with
low-impedance with respect to ground. The DC-to-DC
converter is stopped. SIMI/O is pulled HIGH at V
20 kΩ pull-up resistor. When all conditions are met (supply
voltage, card present, no hardware problems), the
microcontroller may initiate an activation sequence by
setting bit START to logic 1 (t0) via the I2C-bus:

1. The DC-to-DC converter is started (t1).

2. VCC starts rising from 0 to 3 or to 5 V according to

3 V/5 VN control bit with a controlled rise time of

0.17 V/µs typically (t2).

3. I/O buffer is enabled in reception mode (t3).

4. CLK is sent to the card reader with RST = LOW, and

the count of 45000 CLK pulses is started (t4=t

5. If a start bit is detected on I/O, the clock counter is

stopped with RST = LOW. If not, RST = HIGH, and a
new count of 45000 CLK pulses is started (t5).

may be chosen to be

CLK

depending on bit DT/DFN.

DDI

via the

).

act

TDA8003TS

If a start bit is detected on I/O and the clock counter is
stopped with RST = HIGH, the card session may continue.
If not, bit MUTE is set in the status register and
pulled LOW. The microcontroller may initiate a
deactivation sequence by setting bit START to logic 0.

If a start bit is detected during the 200 first CLK pulses of
each count slot, then it will not be taken into account. If a
start bit is detected during 200 and 352 CLK pulses of
each slot, then bit EARLY is set in the status register and
SIMERR is pulled LOW. The microcontroller may initiate a
deactivation sequence by setting bit START to logic 0.

The sequencer is clocked by1⁄64f

which leads to a time

osc

interval T of 25 µs typically. Thus t1=0to1⁄64T;
t2=t1+3⁄2T; t3=t1+7⁄2T; t4=t1+ 4T and t5 depends on
the SIMCLK frequency.

D

EACTIVATION SEQUENCE

Figure 5 shows the deactivation sequence. When the
session is completed, the microcontroller sets bit START
to logic 0. The circuit will execute an automatic
deactivation sequence:

1. Card reset, RST falls to LOW (t10).

2. CLK is stopped (t11).

3. I/O falls to LOW (t12).

4. VCC falls to 0 V with typically 0.17 V/µs slew rate (t13).
The deactivation is completed when VCC reaches

0.4 V (tde).

5. The DC-to-DC converter is stopped and CLK, RST,
VCC and I/O become low-impedance with respect to
PGND (t14).

t10<1⁄64T; t11=t10+1⁄2T; t12=t10+ T; t13=t12+5µs
and t14=t10+ 4T.

SIMERR is

1998 Oct 15 10

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

handbook, full pagewidth

START

V

CC

I/O

CLK

RST

SIMI/O

t0, t1t

2

3

t4 (= t

)t

act

the 200 first CLK pulses are masked

TDA8003TS

MGR437

t

5

Answer To Reset (ATR) begin

handbook, full pagewidth

START

RST

CLK

I/O

V

CC

Fig.4 Activation sequence.

t

10t11

t

13

t

12

t

t

14

de

MGR438

Fig.5 Deactivation sequence.

1998 Oct 15 11

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

Protections

The following main hardware fault conditions are
monitored by the circuit:

• Short-circuits between VCC and other contacts

• Card take-off during transaction

• Supply drop-out.

When one of these problems is detected during a card
session, the security logic block pulls SIMERR to LOW, in
order to warn the microcontroller and initiates an automatic
deactivation of the contacts (see Fig.6).

I/O circuitry

The Idle state is realized by both I/O and SIMI/O being
pulled HIGH (via a 10 kΩ pull-up resistor from I/O to V
and via a 20 kΩ pull-up resistor from SIMI/O to V

I/O is referenced to VCC and SIMI/O to V
operation with VCC≠ VDD≠ V

DDI

.

, thus allowing

DDI

DDI

CC

.

TDA8003TS

When configuration bit I/OEN is logic 0, then
I/O and SIMI/O are independent, which allows
parallelization of several TDA8003TS with only one I/O
line on the microcontroller side (up to 4 different I
addresses).

When bit I/OEN is logic 1, then the data transmission
between I/O and SIMI/O is enabled.

The first side on which a falling edge occurs becomes the
master. An anti-latch circuit disables the detection of falling
edges on the other side, which becomes a slave.

After a delay time td (<500 ns) on the falling edge, the
N transistor on the slave side is turned on, thus
transmitting the logic 0 present on the master side.

When the master goes back to logic 1, the P transistor on
the slave side is turned on during td, and then both sides
return to their Idle states.

The maximum frequency on these lines is 1 MHz.

2

C-bus

handbook, full pagewidth

START

SIMERR

RST

CLK

I/O

V

CC

status readout

MGR439

Fig.6 Emergency deactivation.

1998 Oct 15 12

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

TDA8003TS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
V

DDP
DDS
DDI
i(n)

power supply voltage −0.5 +6.5 V
signal supply voltage −0.5 +6.5 V
interface signal supply voltage −0.5 +6.5 V
input voltage

on pins 1, 17, 21 and 24 −0.5 +6.5 V
on pins 15, 16, 22 and 23 −0.5 V

DDS

+ 0.5 V
on pins 19 and 20 −0.5 +6.5 V
on pins 9, 11 and 13 −0.5 V

+ 0.5 V

CC

on pin 12 −0.5 +6.5 V
on pin 8 −0.5 +7.5 V
on pins 2, 4, 6 and 7 −0.5 V

I

i(n)

DC input current

VUP

+ 0.5 V

on pins 1, 17, 19, 20, 21, 22, 23 and 24 −5+5mA
on pin 15 −5 +10 mA

I

i/o(n)

DC input/output current

on pins 2, 4, 6, 7 and 8 −40 +40 mA
on pin 16 −5+5mA

P

tot

T

j

T

stg

V

esd(n)

continuous total power dissipation T

= −40 to +85 °C − 230 mW

amb

operating junction temperature − 125 °C
IC storage temperature −55 +150 °C
electrostatic discharge voltage

on pins 9, 11, 12, 13 and 16 −6+6kV
on any other pin −2+2kV

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handle Metal Oxide Semiconductor (MOS) devices.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air 102 K/W

1998 Oct 15 13

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

TDA8003TS

CHARACTERISTICS

V

= 3.3 V; V

DD

= 1.5 V; f

DDI

SIMCLK

= 13 MHz; f

= 3.25 MHz; T

CLK

=25°C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies

V

DD

I

DD

supply voltage on pins V
and V

DDP

supply current on pins V
and V

DDP

DDS

DDS

Off mode −−2µA
inactive mode −−50 µA
Power-down mode; V

CC

=5V;

2.5 − 6.0 V

−−500 µA
ICC= 100 µA; SIMCLK connected
to SGND or V

active mode; V
active mode; V

; CLK is stopped

DDI

=3V; ICC=6mA −−18 mA

CC
CC

=5V;

−−50 mA
ICC=10mA

active mode; V

=5V; VCC=3V;

DD

−−10 mA
ICC=6mA

active mode; V

=5V; VCC=5V;

DD

−−30 mA
ICC=10mA

V

DDI

I

DDI

V

th(VDD)

V

hys

V

th(DEL)

V

DEL

I

ch(DEL)

I

dch(DEL)

t

W

interface signal supply voltage 1.5 − 6V
interface signals supply

current

threshold voltage on V
hysteresis voltage on V

DD

th(VDD)

SIMCLK connected to
PGND or V

f

SIMCLK

DDI

= 13 MHz; V

= 1.5 V −−120 µA

DDI

−−2µA

falling edge 2 − 2.3 V

40 − 200 mV
threshold voltage on pin DEL − 1.38 − V
voltage on pin DEL −−VDDV
charge current on pin DEL −0.5 −1 −2.5 µA
discharge current on pin DEL V
alarm pulse width C

DEL=VDD

=10nF 15 − 25 ms

DEL

0.5 −− mA

Pin SIMCLK

f

i(SIMCLK)

t

f

t

r

V

IL

V

IH

I

L

clock input frequency 0 − 20 MHz
fall time −−1µs
rise time −−1µs
LOW-level input voltage 0 − 0.3V
HIGH-level input voltage 0.7V

DDI

− V

DDI

DDI

V

+ 0.3 V

leakage current −−±3µA

DC-to-DC converter

1

V

⁄2f

VUP

osc

oscillator frequency 1 − 1.5 MHz
voltage on pin VUP 5 V card − 6.0 − V

3 V card − 4.5 − V

1998 Oct 15 14

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

TDA8003TS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pin SDA (open-drain)

V

IL

V

IH

I

LH

I

IL

V

OL

LOW-level input voltage −0.3 − +0.3V
HIGH-level input voltage 0.7V

− 6V

DDI

HIGH-level leakage current −−1µA
LOW-level input current depends on the pull-up resistor −−−µA
LOW-level output voltage IOL=3mA −−0.3 V

DDI

V

Pin SCL (open-drain)

V

IL

V

IH

I

LI

Pin

SIMERR (100 kΩ pull-up resistor to V

V

OL

V

OH

Pins SAD0, SAD1 and

V

IL

V

IH

I

LI

LOW-level input voltage −0.3 − +0.3V
HIGH-level input voltage 0.7V
input leakage current −−1µA

LOW-level output voltage IOL<1mA −−0.3V
HIGH-level output voltage IOH< −1 µA 0.7V

PWROFF

LOW-level input voltage 0 − 0.3V
HIGH-level input voltage 0.7V
input leakage current −−±1µA

DDI

− 6V

DDI

)

DDI

−− V

DDI

DDI

− V

DDI

DDI

DDI

+ 0.3 V

V

V

V

Pin RST

V

O

I

O

V

OL

V

OH

t

f

t

r

output voltage inactive mode; IO=1mA −0.3 − +0.4 V
output current inactive mode; pin RST grounded −−−1mA
LOW-level output voltage IOL= 200 µA −0.2 − +0.3 V
HIGH-level output voltage IOH< −200 µAV

− 0.5 − VCC+ 0.2 V

CC

fall time CL=30pF −−0.5 µs
rise time CL=30pF −−0.5 µs

Pin CLK

V

O

I

O

V

OL

V

OH

t

f

t

r

f

clk

output voltage inactive mode; IO=1mA −0.3 − +0.4 V
output current inactive mode; pin CLK grounded −−−1mA
LOW-level output voltage IOL= 200 µA −0.2 − +0.3 V
HIGH-level output voltage IOH= −200 µAV

− 0.5 − VCC+ 0.2 V

CC

fall time CL=30pF −−8ns
rise time CL=30pF −−8ns
clock frequency 1 MHz power-down configuration 1 − 1.5 MHz

regular activity 0 − 10 MHz

δ duty factor CL=30pF 45 − 55 %

1998 Oct 15 15

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

TDA8003TS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pin V

CC

V

O

output voltage inactive mode; IO=1mA −−0.4 V

active mode; 5 V card; no load 4.85 5.10 5.40 V
active mode; 3 V card; no load 2.8 3.05 3.22 V
active mode; with 200 nF capacitor;

including static load (up to 20 mA)
and dynamic current pulses;
I

= 200 mA, f

max

max

= 5 MHz;

duration <400 ns

5 V card; 40 nAs pulses 4.60 − 5.40 V
3 V card; 24 nAs pulses 2.75 − 3.22 V

I

O

SR slew rate on V

output current inactive mode; pin VCC grounded −−−1mA

V

=5or3V; VDD= 2.5 V −−15 mA

CC

=5or3V; VDD= 5.5 V −−40 mA

V

CC

(rise and fall) C

CC

= 300 nF 0.05 0.17 0.25 V/µs

L(max)

Pin I/O

V

O

I

O

V

OL

V

OH

V

IL

V

IH

I

LIH

output voltage inactive mode; IO=1mA −−0.4 V
output current inactive mode; pin I/O grounded −−−1mA
LOW-level output voltage IOL=1mA −0.2 − +0.3 V
HIGH-level output voltage +25 < IOH< −25 µA 0.8V

− VCC+ 0.2 V

CC

LOW-level input voltage −0.3 − +0.8 V
HIGH-level input voltage 1.5 − VCC+ 0.3 V
HIGH-level input leakage

−−10 µA

current

I

IL

t

t(DI)

t

t(DO)

t

d

R

pu(int)

LOW-level input current −−−600 µA
data input transition time CL=30pF −−1µs
data output transition time CL=30pF −−0.5 µs
delay time on falling edge −−500 ns
internal pull-up resistance

between pins I/O and V

CC

8 − 13 kΩ

Pin SIMI/O

V
V

V
V
I

OL
OH

IL
IH

LIH

LOW-level output voltage IOL=1mA −0.2 − +0.3 V
HIGH-level output voltage with internal 20 kΩ pull-up resistor

to V

; IO=10µA

DDI

LOW-level input voltage −0.3 − +0.3V
HIGH-level input voltage 0.7V
HIGH-level input leakage

V

− 0.3 − V

DDI

DDI

− V

DDI

DDI

+ 0.2 V

DDI

+ 0.3 V

−−10 µA

V

current

I

IL

t

t(DI)

LOW-level input current with internal 20 kΩ pull-up resistor

to V

; VI=0V

DDI

−− µA

V

–

DDI

--------------­10kΩ

data input transition time CL=30pF −−1µs

1998 Oct 15 16

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

TDA8003TS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

t

t(DO)

t

d

R

pu(int)

data output transition time CL=30pF −−0.5 µs
delay time on falling edge −−500 ns
internal pull-up resistance

16 − 26 kΩ
between pins SIMI/O
and V

DDI

Pin

PRES

V

IL

V

IH

I

IL

I

IH

LOW-level input voltage −0.3 − +0.3V
HIGH-level input voltage 0.7V

− VDD+ 0.3 V

DD

LOW-level input current −−5µA
HIGH-level input current −−−5µA

DD

V

Timing

t

act

t

de

activation time −−150 µs
deactivation time −−120 µs

1998 Oct 15 17

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1998 Oct 15 18

handbook, full pagewidth

+1.5 to +6 V

APPLICATION INFORMATION

Philips Semiconductors Preliminary specification

I

2

C-bus SIM card interface

CARD READER

C4 C8
C3 C7
C2 C6
C1 C5
C5I
C6I
C7I
C8I

100 nF

0 Ω

+1.5 V+3.3 V

2.2
µF

100 nF

C1I
C2I

C3I
C4I

K1

(1)

K2

100 nF

+3.3 V

PWROFF

100 nF

PGND

V

100

nF

SGND

1

S1

2
3

S3

4

DDP

5

S4

6

TDA8003TS

S2

7

VUP

8

I/O

9
10

CLK

11

V

CC

12 13

100 nF 100 nF

24
23
22
21
20
19
18
17
16
15
14

SIMCLK
SAD1
SAD0
SIMERR
SCL
SDA

V

DDI
SIMI/O
PRES
DEL

V

DDS
RST

+3.3 V

100 nF

10
nF

+1.5 V

+1.5 V

V
P0-0

P0-1
P0-2
P0-3
P0-4
P0-5
P0-6
P0-7

PSEN

P2-7
P2-6
P2-5
P2-4
P2-3
P2-2
P2-1
P2-0

CC

EA

ALE

40
39
38
37
36
35
34
33
32
31
30
29
28

MICROCONTROLLER

27
26
25
24
23
22

P1-0

1

P1-1

2

P1-2

3

P1-3

4

P1-4

5

P1-5

6

P1-6

7

P1-7

8

RST

9

P3-0

10

P3-1

11

P3-2

12

P3-3

13

P3-4

14

P3-5

15

P3-6

16

P3-7

17

XTAL2

18

XTAL1

19

V

SS

2021

1.5 to 6 kΩ1.5 to 6 kΩ

+1.5 V

14.74 MHz

33 pF

10 µF

33
pF

TDA8003TS

(1) The switch is normally closed when the card is not present.

MGR440

Fig.7 Application diagram.

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

PACKAGE OUTLINE

SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm

D

c

y

Z

24 13

TDA8003TS

SOT340-1

E

H

E

A

X

v M

A

pin 1 index

112

w M

b

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

2.0

0.21

0.05

1.80

1.65

0.25

b

3

p

0.38

0.25

UNIT A1A2A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

p

cD

0.20

8.4

0.09

8.0

0 2.5 5 mm

scale

(1)E(1) (1)

eHELLpQZywv θ

5.4

0.65 1.25

5.2

7.9

7.6

Q

A

2

A

1

detail X

1.03

0.9

0.63

0.7

(A )

L

p

L

A

3

θ

0.13 0.10.2

0.8

0.4

o

8

o

0

OUTLINE

VERSION

SOT340-1 MO-150AG

IEC JEDEC EIAJ

REFERENCES

1998 Oct 15 19

EUROPEAN

PROJECTION

ISSUE DATE

93-09-08
95-02-04

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

TDA8003TS

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1998 Oct 15 20

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

TDA8003TS

PURCHASE OF PHILIPS I

Purchase of Philips I
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.

2

C COMPONENTS

2

C components conveys a license under the Philips’ I2C patent to use the

1998 Oct 15 21

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

TDA8003TS

NOTES

1998 Oct 15 22

Philips Semiconductors Preliminary specification

I2C-bus SIM card interface

TDA8003TS

NOTES

1998 Oct 15 23

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© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 545104/750/01/pp24 Date of release: 1998 Oct 15 Document order number: 9397 750 04004